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D.","first_name":"A. D.","last_name":"Wieck"},{"first_name":"V.","full_name":"Ney, V.","last_name":"Ney"},{"full_name":"Kammermeier, T.","first_name":"T.","last_name":"Kammermeier"},{"first_name":"A.","full_name":"Ney, A.","last_name":"Ney"},{"last_name":"Schörmann","first_name":"J.","full_name":"Schörmann, J."},{"first_name":"S.","full_name":"Potthast, S.","last_name":"Potthast"},{"last_name":"As","full_name":"As, D. J.","first_name":"D. J."},{"first_name":"K.","full_name":"Lischka, K.","last_name":"Lischka"}],"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","status":"public","date_created":"2019-03-26T10:23:42Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","_id":"8630","date_updated":"2022-01-06T07:03:57Z","article_number":"262505","doi":"10.1063/1.2753113","language":[{"iso":"eng"}],"year":"2007","citation":{"mla":"Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.","bibtex":"@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={10.1063/1.2753113}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.","ama":"Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. 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Lischka, Applied Physics Letters (2007)."},"type":"journal_article"},{"user_id":"42514","title":"Focused ion beam implantation induced site-selective growth of InAs quantum dots","date_created":"2019-03-26T10:26:08Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"last_name":"Mehta","first_name":"M.","full_name":"Mehta, M."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Melnikov","first_name":"A.","full_name":"Melnikov, A."},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"full_name":"Remhof, A.","first_name":"A.","last_name":"Remhof"}],"doi":"10.1063/1.2786836","article_number":"123108","_id":"8632","date_updated":"2022-01-06T07:03:57Z","language":[{"iso":"eng"}],"citation":{"chicago":"Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836.","ama":"Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.2786836","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007).","ieee":"M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” Applied Physics Letters, 2007."},"year":"2007","type":"journal_article"},{"extern":"1","article_type":"original","abstract":[{"text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support.","lang":"eng"}],"user_id":"23547","quality_controlled":"1","author":[{"full_name":"Waitz, T.","first_name":"T.","last_name":"Waitz"},{"id":"23547","last_name":"Tiemann","full_name":"Tiemann, Michael","orcid":"0000-0003-1711-2722","first_name":"Michael"},{"full_name":"Klar, P. J.","first_name":"P. J.","last_name":"Klar"},{"first_name":"J.","full_name":"Sann, J.","last_name":"Sann"},{"last_name":"Stehr","first_name":"J.","full_name":"Stehr, J."},{"first_name":"B. K.","full_name":"Meyer, B. K.","last_name":"Meyer"}],"publication":"Applied Physics Letters","status":"public","date_created":"2021-10-09T09:40:39Z","_id":"25986","article_number":"123108","citation":{"ieee":"T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.","short":"T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007).","bibtex":"@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. 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Hilleringmann, Applied Physics Letters 90 (2007).","mla":"Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.","bibtex":"@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }","ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. 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Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.","short":"C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).","mla":"Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:10.1063/1.2166680.","bibtex":"@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={10.1063/1.2166680}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }","chicago":"Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. 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Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680"},"intvolume":" 88","_id":"7651","article_number":"031111","issue":"3","publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","first_name":"Cedrik","id":"20798","last_name":"Meier"},{"last_name":"Hennessy","full_name":"Hennessy, Kevin","first_name":"Kevin"},{"last_name":"Haberer","full_name":"Haberer, Elaine D.","first_name":"Elaine D."},{"last_name":"Sharma","first_name":"Rajat","full_name":"Sharma, Rajat"},{"last_name":"Choi","first_name":"Yong-Seok","full_name":"Choi, Yong-Seok"},{"first_name":"Kelly","full_name":"McGroddy, Kelly","last_name":"McGroddy"},{"last_name":"Keller","first_name":"Stacia","full_name":"Keller, Stacia"},{"full_name":"DenBaars, Steven P.","first_name":"Steven P.","last_name":"DenBaars"},{"last_name":"Nakamura","full_name":"Nakamura, Shuji","first_name":"Shuji"},{"last_name":"Hu","first_name":"Evelyn L.","full_name":"Hu, Evelyn L."}],"volume":88,"date_created":"2019-02-13T11:41:17Z","status":"public","extern":"1","user_id":"20798"},{"publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"author":[{"first_name":"M.","full_name":"Knop, M.","last_name":"Knop"},{"last_name":"Wieser","first_name":"U.","full_name":"Wieser, U."},{"first_name":"U.","full_name":"Kunze, U.","last_name":"Kunze"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_created":"2019-03-27T07:54:36Z","status":"public","title":"Ballistic rectification in an asymmetric mesoscopic cross junction","user_id":"42514","citation":{"apa":"Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. https://doi.org/10.1063/1.2179618","ama":"Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618","chicago":"Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. 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Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006."},"year":"2006","type":"journal_article","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:58Z","_id":"8648","doi":"10.1063/1.2179618","article_number":"082110"},{"type":"journal_article","year":"2006","citation":{"short":"R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006).","ieee":"R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting diodes,” Applied Physics Letters, 2006.","chicago":"Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.","apa":"Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). 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C. and Stufler, S. and et al.}, year={2006} }","mla":"Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057."},"language":[{"iso":"eng"}],"article_number":"121115","doi":"10.1063/1.2188057","_id":"8654","date_updated":"2022-01-06T07:03:58Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"status":"public","date_created":"2019-03-27T08:21:39Z","author":[{"first_name":"R.","full_name":"Schmidt, R.","last_name":"Schmidt"},{"last_name":"Scholz","full_name":"Scholz, U.","first_name":"U."},{"last_name":"Vitzethum","first_name":"M.","full_name":"Vitzethum, M."},{"last_name":"Fix","full_name":"Fix, R.","first_name":"R."},{"last_name":"Metzner","full_name":"Metzner, C.","first_name":"C."},{"first_name":"P.","full_name":"Kailuweit, P.","last_name":"Kailuweit"},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A.","full_name":"Wieck, A."},{"full_name":"Hübner, M. 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W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }","mla":"Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109, 2005, doi:10.1063/1.2149371.","apa":"Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article 261109. https://doi.org/10.1063/1.2149371","ama":"Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters. 2005;87(26). doi:10.1063/1.2149371","chicago":"Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005). https://doi.org/10.1063/1.2149371.","ieee":"C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol. 87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.","short":"C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005)."},"_id":"23507","intvolume":" 87","issue":"26","article_number":"261109","publication":"Applied Physics Letters","author":[{"last_name":"Schlichenmaier","full_name":"Schlichenmaier, C.","first_name":"C."},{"last_name":"Thränhardt","first_name":"A.","full_name":"Thränhardt, A."},{"first_name":"Torsten","full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344"},{"first_name":"S. W.","full_name":"Koch, S. W.","last_name":"Koch"},{"full_name":"Chow, W. W.","first_name":"W. W.","last_name":"Chow"},{"full_name":"Hader, J.","first_name":"J.","last_name":"Hader"},{"first_name":"J. V.","full_name":"Moloney, J. V.","last_name":"Moloney"}],"date_created":"2021-08-24T09:29:41Z","status":"public","volume":87,"abstract":[{"lang":"eng","text":"A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n."}],"extern":"1","user_id":"49063","language":[{"iso":"eng"}],"date_updated":"2023-04-24T06:00:23Z","doi":"10.1063/1.2149371","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range"},{"title":"Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics","department":[{"_id":"59"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2023-03-22T10:34:05Z","doi":"10.1063/1.1849845","language":[{"iso":"eng"}],"user_id":"20179","keyword":["Physics and Astronomy (miscellaneous)"],"publication":"Applied Physics Letters","author":[{"full_name":"Scharnberg, M.","first_name":"M.","last_name":"Scharnberg"},{"last_name":"Hu","full_name":"Hu, J.","first_name":"J."},{"full_name":"Kanzow, J.","first_name":"J.","last_name":"Kanzow"},{"first_name":"K.","full_name":"Rätzke, K.","last_name":"Rätzke"},{"first_name":"R.","full_name":"Adelung, R.","last_name":"Adelung"},{"full_name":"Faupel, F.","first_name":"F.","last_name":"Faupel"},{"full_name":"Pannemann, C.","first_name":"C.","last_name":"Pannemann"},{"id":"20179","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","first_name":"Ulrich"},{"full_name":"Meyer, S.","first_name":"S.","last_name":"Meyer"},{"last_name":"Pflaum","full_name":"Pflaum, J.","first_name":"J."}],"publisher":"AIP Publishing","date_created":"2023-01-24T12:21:59Z","status":"public","volume":86,"_id":"39574","intvolume":" 86","issue":"2","article_number":"024104","type":"journal_article","citation":{"chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied Physics Letters 86, no. 2 (2005). https://doi.org/10.1063/1.1849845.","apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters, 86(2), Article 024104. https://doi.org/10.1063/1.1849845","ama":"Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845","mla":"Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied Physics Letters, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:10.1063/1.1849845.","bibtex":"@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={10.1063/1.1849845}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }","short":"M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).","ieee":"M. Scharnberg et al., “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845."},"year":"2005"},{"author":[{"first_name":"E. D.","full_name":"Haberer, E. D.","last_name":"Haberer"},{"last_name":"Sharma","full_name":"Sharma, R.","first_name":"R."},{"first_name":"Cedrik","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798"},{"last_name":"Stonas","full_name":"Stonas, A. R.","first_name":"A. R."},{"full_name":"Nakamura, S.","first_name":"S.","last_name":"Nakamura"},{"last_name":"DenBaars","full_name":"DenBaars, S. P.","first_name":"S. P."},{"last_name":"Hu","full_name":"Hu, E. L.","first_name":"E. 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Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters 85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.","mla":"Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters, vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167.","bibtex":"@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}, volume={85}, DOI={10.1063/1.1829167}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }","short":"E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181.","ieee":"E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching,” Applied Physics Letters, vol. 85, no. 22, pp. 5179–5181, 2004."},"year":"2004","page":"5179-5181","intvolume":" 85","_id":"7678","issue":"22","department":[{"_id":"15"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.1829167"},{"doi":"10.1063/1.1736316","_id":"8696","date_updated":"2022-01-06T07:03:59Z","language":[{"iso":"eng"}],"page":"3313-3315","type":"journal_article","citation":{"bibtex":"@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded two-dimensional p–n junction}, DOI={10.1063/1.1736316}, journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }","mla":"Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316.","chicago":"Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15. https://doi.org/10.1063/1.1736316.","apa":"Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315. https://doi.org/10.1063/1.1736316","ama":"Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316","ieee":"S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315, 2004.","short":"S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 3313–3315."},"year":"2004","user_id":"42514","title":"The linearly graded two-dimensional p–n junction","date_created":"2019-03-27T11:43:00Z","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"last_name":"Petrosyan","full_name":"Petrosyan, S.","first_name":"S."},{"first_name":"A.","full_name":"Yesayan, A.","last_name":"Yesayan"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}]},{"date_updated":"2022-01-06T07:03:59Z","_id":"8711","doi":"10.1063/1.1781750","page":"2277-2279","type":"journal_article","citation":{"ieee":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters, pp. 2277–2279, 2004.","short":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 2277–2279.","mla":"Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750.","bibtex":"@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750}, journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279} }","apa":"Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck, A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750","ama":"Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279. doi:10.1063/1.1781750","chicago":"Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, 2277–79. https://doi.org/10.1063/1.1781750."},"year":"2004","language":[{"iso":"eng"}],"title":"Magnetotransport in C-doped AlGaAs heterostructures","user_id":"42514","publication":"Applied Physics Letters","department":[{"_id":"15"},{"_id":"230"}],"author":[{"full_name":"Grbić, B.","first_name":"B.","last_name":"Grbić"},{"first_name":"C.","full_name":"Ellenberger, C.","last_name":"Ellenberger"},{"full_name":"Ihn, T.","first_name":"T.","last_name":"Ihn"},{"last_name":"Ensslin","first_name":"K.","full_name":"Ensslin, K."},{"first_name":"Dirk","full_name":"Reuter, Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. 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W.","last_name":"Chow"}],"volume":85,"date_created":"2021-08-24T09:46:22Z","status":"public","extern":"1","abstract":[{"text":"A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters.","lang":"eng"}],"user_id":"49063","page":"5526-5528","year":"2004","type":"journal_article","citation":{"apa":"Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2004). Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters, 85(23), 5526–5528. https://doi.org/10.1063/1.1831570","ama":"Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters. 2004;85(23):5526-5528. doi:10.1063/1.1831570","chicago":"Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters 85, no. 23 (2004): 5526–28. https://doi.org/10.1063/1.1831570.","mla":"Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters, vol. 85, no. 23, 2004, pp. 5526–28, doi:10.1063/1.1831570.","bibtex":"@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004, title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85}, DOI={10.1063/1.1831570}, number={23}, journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier, C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney, J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }","short":"A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528.","ieee":"A. Thränhardt et al., “Nonequilibrium gain in optically pumped GaInNAs laser structures,” Applied Physics Letters, vol. 85, no. 23, pp. 5526–5528, 2004, doi: 10.1063/1.1831570."},"_id":"23514","intvolume":" 85","issue":"23","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Nonequilibrium gain in optically pumped GaInNAs laser structures","language":[{"iso":"eng"}],"date_updated":"2023-04-24T06:23:26Z","doi":"10.1063/1.1831570"},{"doi":"10.1063/1.1539925","date_updated":"2022-01-06T07:03:43Z","language":[{"iso":"eng"}],"title":"Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs","publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","department":[{"_id":"15"}],"issue":"3","intvolume":" 82","_id":"7683","page":"481-483","type":"journal_article","year":"2003","citation":{"mla":"Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters, vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925.","bibtex":"@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter, D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.}, year={2003}, pages={481–483} }","apa":"Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003). Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925","ama":"Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925","chicago":"Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.","ieee":"D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. 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Roldan and Doi, M. and Keune, W. and Hoch, S. and Reuter, Dirk and Wieck, A. and Schmitte, T. and Zabel, H.}, year={2003}, pages={1072–1074} }","mla":"Cuenya, B. Roldan, et al. “Magnetism and Interface Properties of Epitaxial Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.” Applied Physics Letters, 2003, pp. 1072–74, doi:10.1063/1.1542934.","apa":"Cuenya, B. R., Doi, M., Keune, W., Hoch, S., Reuter, D., Wieck, A., … Zabel, H. (2003). Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied Physics Letters, 1072–1074. https://doi.org/10.1063/1.1542934","ama":"Cuenya BR, Doi M, Keune W, et al. Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied Physics Letters. 2003:1072-1074. doi:10.1063/1.1542934","chicago":"Cuenya, B. Roldan, M. Doi, W. Keune, S. Hoch, Dirk Reuter, A. Wieck, T. Schmitte, and H. Zabel. “Magnetism and Interface Properties of Epitaxial Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.” Applied Physics Letters, 2003, 1072–74. https://doi.org/10.1063/1.1542934."},"year":"2003","user_id":"42514","title":"Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures","date_created":"2019-03-28T14:59:02Z","status":"public","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","author":[{"first_name":"B. Roldan","full_name":"Cuenya, B. 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The measurements were obtained by using a cross-correlation\r\nfrequency-resolved optical gating technique which allows us to retrieve the field amplitude of the\r\npropagating pulses."}],"article_type":"original","ddc":["530"],"user_id":"158","page":"3668-3670","year":"2003","type":"journal_article","citation":{"mla":"Schneider, S., et al. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” Applied Physics Letters, vol. 83, no. 18, AIP Publishing, 2003, pp. 3668–70, doi:10.1063/1.1624492.","bibtex":"@article{Schneider_Borri_Langbein_Woggon_Förstner_Knorr_Sellin_Ouyang_Bimberg_2003, title={Self-induced transparency in InGaAs quantum-dot waveguides}, volume={83}, DOI={10.1063/1.1624492}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schneider, S. and Borri, P. and Langbein, W. and Woggon, U. and Förstner, Jens and Knorr, A. and Sellin, R. L. and Ouyang, D. and Bimberg, D.}, year={2003}, pages={3668–3670} }","chicago":"Schneider, S., P. Borri, W. Langbein, U. Woggon, Jens Förstner, A. Knorr, R. L. Sellin, D. Ouyang, and D. Bimberg. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” Applied Physics Letters 83, no. 18 (2003): 3668–70. https://doi.org/10.1063/1.1624492.","apa":"Schneider, S., Borri, P., Langbein, W., Woggon, U., Förstner, J., Knorr, A., … Bimberg, D. (2003). Self-induced transparency in InGaAs quantum-dot waveguides. Applied Physics Letters, 83(18), 3668–3670. https://doi.org/10.1063/1.1624492","ama":"Schneider S, Borri P, Langbein W, et al. Self-induced transparency in InGaAs quantum-dot waveguides. Applied Physics Letters. 2003;83(18):3668-3670. doi:10.1063/1.1624492","ieee":"S. Schneider et al., “Self-induced transparency in InGaAs quantum-dot waveguides,” Applied Physics Letters, vol. 83, no. 18, pp. 3668–3670, 2003.","short":"S. Schneider, P. Borri, W. Langbein, U. Woggon, J. Förstner, A. Knorr, R.L. Sellin, D. Ouyang, D. 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