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Meier, Applied Physics Letters 97 (2010).","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812"},"type":"journal_article","user_id":"20798","abstract":[{"text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.","lang":"eng"}],"article_type":"original","volume":97,"date_created":"2018-09-20T12:38:51Z","status":"public","publication":"Applied Physics Letters","publisher":"AIP Publishing","author":[{"first_name":"M.","full_name":"Mehta, M.","last_name":"Mehta"},{"full_name":"Reuter, Dirk","first_name":"Dirk","id":"37763","last_name":"Reuter"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. 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The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements."}],"article_type":"original","citation":{"ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. 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Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008).","ieee":"W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008.","chicago":"Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439.","apa":"Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439","ama":"Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. 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D.}, year={2008} }","mla":"Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439."},"intvolume":" 92","_id":"7640","issue":"19","article_number":"193111","department":[{"_id":"15"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","title":"Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","doi":"10.1063/1.2920439"},{"title":"Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures","user_id":"42514","author":[{"first_name":"F.-Y.","full_name":"Lo, F.-Y.","last_name":"Lo"},{"full_name":"Melnikov, A.","first_name":"A.","last_name":"Melnikov"},{"last_name":"Reuter","id":"37763","first_name":"Dirk","full_name":"Reuter, Dirk"},{"first_name":"Y.","full_name":"Cordier, Y.","last_name":"Cordier"},{"last_name":"Wieck","full_name":"Wieck, A. 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Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836.","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }"},"year":"2007","type":"journal_article","article_number":"123108","doi":"10.1063/1.2786836","date_updated":"2022-01-06T07:03:57Z","_id":"8632"},{"title":"Crystalline ZnO with an enhanced surface area obtained by nanocasting","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2023-03-09T08:49:01Z","doi":"10.1063/1.2713872","language":[{"iso":"eng"}],"extern":"1","article_type":"original","abstract":[{"lang":"eng","text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support."}],"user_id":"23547","quality_controlled":"1","author":[{"last_name":"Waitz","first_name":"T.","full_name":"Waitz, T."},{"first_name":"Michael","orcid":"0000-0003-1711-2722","full_name":"Tiemann, Michael","last_name":"Tiemann","id":"23547"},{"full_name":"Klar, P. J.","first_name":"P. J.","last_name":"Klar"},{"last_name":"Sann","full_name":"Sann, J.","first_name":"J."},{"last_name":"Stehr","first_name":"J.","full_name":"Stehr, J."},{"last_name":"Meyer","first_name":"B. K.","full_name":"Meyer, B. 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Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.","ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926","apa":"Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926","ieee":"M. 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Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).","ieee":"C. Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.","apa":"Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680","ama":"Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3). doi:10.1063/1.2166680","chicago":"Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. 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Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).","ieee":"M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006."},"language":[{"iso":"eng"}],"title":"Ballistic rectification in an asymmetric mesoscopic cross junction","user_id":"42514","author":[{"last_name":"Knop","full_name":"Knop, M.","first_name":"M."},{"last_name":"Wieser","first_name":"U.","full_name":"Wieser, U."},{"last_name":"Kunze","first_name":"U.","full_name":"Kunze, U."},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. 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C. and Stufler, S. and et al.}, year={2006} }"},"type":"journal_article","language":[{"iso":"eng"}]},{"status":"public","date_created":"2019-03-27T08:39:57Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Stavarache","first_name":"V.","full_name":"Stavarache, V."},{"id":"37763","last_name":"Reuter","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"full_name":"Schwab, M.","first_name":"M.","last_name":"Schwab"},{"last_name":"Yakovlev","first_name":"D. R.","full_name":"Yakovlev, D. 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