[{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Wiemann","first_name":"M.","full_name":"Wiemann, M."},{"last_name":"Wieser","first_name":"U.","full_name":"Wieser, U."},{"full_name":"Kunze, U.","first_name":"U.","last_name":"Kunze"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. 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Full-wave rectification based upon hot-electron thermopower. <i>Applied Physics Letters</i>. 2010;97(6). doi:<a href=\"https://doi.org/10.1063/1.3475922\">10.1063/1.3475922</a>","mla":"Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” <i>Applied Physics Letters</i>, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3475922\">10.1063/1.3475922</a>.","chicago":"Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” <i>Applied Physics Letters</i> 97, no. 6 (2010). <a href=\"https://doi.org/10.1063/1.3475922\">https://doi.org/10.1063/1.3475922</a>.","short":"M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010).","ieee":"M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification based upon hot-electron thermopower,” <i>Applied Physics Letters</i>, vol. 97, no. 6, 2010.","apa":"Wiemann, M., Wieser, U., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2010). Full-wave rectification based upon hot-electron thermopower. <i>Applied Physics Letters</i>, <i>97</i>(6). <a href=\"https://doi.org/10.1063/1.3475922\">https://doi.org/10.1063/1.3475922</a>"}},{"issue":"14","publication":"Applied Physics Letters","date_created":"2019-02-21T14:41:19Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","author":[{"first_name":"M.","last_name":"Mehta","full_name":"Mehta, M."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"last_name":"Michaelis de Vasconcellos","first_name":"S.","full_name":"Michaelis de Vasconcellos, S."},{"last_name":"Zrenner","first_name":"A.","full_name":"Zrenner, A."},{"full_name":"Meier, C.","first_name":"C.","last_name":"Meier"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2010","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","intvolume":"        97","date_updated":"2022-01-06T07:03:48Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"143101","doi":"10.1063/1.3488812","citation":{"ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>"},"status":"public","_id":"7990","publisher":"AIP Publishing","volume":97,"user_id":"42514"},{"article_number":"143101","language":[{"iso":"eng"}],"doi":"10.1063/1.3488812","title":"An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode","year":"2010","author":[{"last_name":"Mehta","first_name":"M.","full_name":"Mehta, M."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Michaelis de Vasconcellos, S.","first_name":"S.","last_name":"Michaelis de Vasconcellos"},{"id":"606","orcid":"0000-0002-5190-0944","first_name":"Artur","last_name":"Zrenner","full_name":"Zrenner, Artur"},{"id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:01:09Z","article_type":"original","intvolume":"        97","date_created":"2018-09-20T12:38:51Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"publication":"Applied Physics Letters","issue":"14","abstract":[{"text":"We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices.","lang":"eng"}],"publisher":"AIP Publishing","_id":"4550","user_id":"20798","volume":97,"status":"public","citation":{"ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” <i>Applied Physics Letters</i>, vol. 97, no. 14, 2010.","apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>, <i>97</i>(14). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>","chicago":"Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i> 97, no. 14 (2010). <a href=\"https://doi.org/10.1063/1.3488812\">https://doi.org/10.1063/1.3488812</a>.","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010).","mla":"Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” <i>Applied Physics Letters</i>, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. <i>Applied Physics Letters</i>. 2010;97(14). doi:<a href=\"https://doi.org/10.1063/1.3488812\">10.1063/1.3488812</a>"}},{"publisher":"AIP Publishing","_id":"4194","ddc":["530"],"user_id":"55706","volume":96,"status":"public","has_accepted_license":"1","file_date_updated":"2018-08-28T11:58:27Z","citation":{"bibtex":"@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }","short":"E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).","ama":"Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>. 2010;96(25). doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>","chicago":"Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i> 96, no. 25 (2010). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>.","ieee":"E. Tschumak <i>et al.</i>, “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” <i>Applied Physics Letters</i>, vol. 96, no. 25, 2010.","apa":"Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). <i>Applied Physics Letters</i>, <i>96</i>(25). <a href=\"https://doi.org/10.1063/1.3455066\">https://doi.org/10.1063/1.3455066</a>","mla":"Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” <i>Applied Physics Letters</i>, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:<a href=\"https://doi.org/10.1063/1.3455066\">10.1063/1.3455066</a>."},"article_number":"253501","language":[{"iso":"eng"}],"doi":"10.1063/1.3455066","title":"Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)","year":"2010","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Tschumak, E.","last_name":"Tschumak","first_name":"E."},{"full_name":"Granzner, R.","first_name":"R.","last_name":"Granzner"},{"id":"20797","first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg"},{"first_name":"F.","last_name":"Schwierz","full_name":"Schwierz, F."},{"last_name":"Lischka","first_name":"K.","full_name":"Lischka, K."},{"full_name":"Nagasawa, H.","first_name":"H.","last_name":"Nagasawa"},{"full_name":"Abe, M.","first_name":"M.","last_name":"Abe"},{"first_name":"Donald","last_name":"As","full_name":"As, Donald"}],"date_updated":"2022-01-06T07:00:33Z","publication_status":"published","intvolume":"        96","article_type":"original","file":[{"file_id":"4195","success":1,"content_type":"application/pdf","relation":"main_file","date_updated":"2018-08-28T11:58:27Z","file_name":"Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf","access_level":"closed","file_size":277385,"date_created":"2018-08-28T11:58:27Z","creator":"hclaudia"}],"date_created":"2018-08-28T11:56:08Z","type":"journal_article","department":[{"_id":"15"},{"_id":"286"}],"publication":"Applied Physics Letters","issue":"25","abstract":[{"text":"A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.","lang":"eng"}]},{"date_updated":"2022-01-06T07:03:48Z","publication_status":"published","intvolume":"        94","title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","year":"2009","author":[{"full_name":"Buchholz, S. S.","first_name":"S. S.","last_name":"Buchholz"},{"full_name":"Fischer, S. F.","first_name":"S. F.","last_name":"Fischer"},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.3069281","article_number":"022107","language":[{"iso":"eng"}],"publication":"Applied Physics Letters","issue":"2","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-02-21T13:28:29Z","status":"public","user_id":"42514","volume":94,"_id":"7973","publisher":"AIP Publishing","citation":{"short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009).","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i> 94, no. 2 (2009). <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>.","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” <i>Applied Physics Letters</i>, vol. 94, no. 2, 2009.","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>, <i>94</i>(2). <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. 2009;94(2). doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, vol. 94, no. 2, 022107, AIP Publishing, 2009, doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>."}},{"date_updated":"2022-01-06T07:03:57Z","publication_status":"published","title":"Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring","status":"public","year":"2009","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Buchholz, S. S.","last_name":"Buchholz","first_name":"S. S."},{"last_name":"Fischer","first_name":"S. F.","full_name":"Fischer, S. F."},{"last_name":"Kunze","first_name":"U.","full_name":"Kunze, U."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"doi":"10.1063/1.3069281","user_id":"42514","article_number":"022107","language":[{"iso":"eng"}],"_id":"8579","publication":"Applied Physics Letters","citation":{"ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” <i>Applied Physics Letters</i>, 2009.","mla":"Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, 022107, 2009, doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>.","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>","bibtex":"@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }","ama":"Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3069281\">10.1063/1.3069281</a>","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009).","chicago":"Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3069281\">https://doi.org/10.1063/1.3069281</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-26T08:34:37Z"},{"date_created":"2019-03-26T08:42:07Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"bibtex":"@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }","ama":"Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. <i>Applied Physics Letters</i>. 2009. doi:<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>","mla":"Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” <i>Applied Physics Letters</i>, 023107, 2009, doi:<a href=\"https://doi.org/10.1063/1.3072366\">10.1063/1.3072366</a>.","short":"J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).","chicago":"Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” <i>Applied Physics Letters</i>, 2009. <a href=\"https://doi.org/10.1063/1.3072366\">https://doi.org/10.1063/1.3072366</a>.","ieee":"J. H. 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