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E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” <i>Applied Physics Letters</i>, 241920, 2008, doi:<a href=\"https://doi.org/10.1063/1.2943279\">10.1063/1.2943279</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-26T09:51:24Z"},{"article_number":"242102","_id":"8608","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1063/1.2948856","title":"Electrical detection of photoinduced spins both at room temperature and in remanence","year":"2008","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Hövel, S.","first_name":"S.","last_name":"Hövel"},{"first_name":"N. C.","last_name":"Gerhardt","full_name":"Gerhardt, N. C."},{"last_name":"Hofmann","first_name":"M. R.","full_name":"Hofmann, M. 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C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters 93 (2008).","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>. 2008;93(2). doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i> 93, no. 2 (2008). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>.","ieee":"S. Hövel <i>et al.</i>, “Room temperature electrical spin injection in remanence,” <i>Applied Physics Letters</i>, vol. 93, no. 2, 2008, doi: <a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., &#38; Westerholt, K. (2008). Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>, <i>93</i>(2). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>","mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i>, vol. 93, no. 2, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>."},"quality_controlled":"1","_id":"59695","publisher":"AIP Publishing","user_id":"15911","volume":93,"status":"public","date_created":"2025-04-25T10:28:29Z","type":"journal_article","issue":"2","publication":"Applied Physics Letters","abstract":[{"text":"We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.","lang":"eng"}],"language":[{"iso":"eng"}],"doi":"10.1063/1.2957469","year":"2008","title":"Room temperature electrical spin injection in remanence","author":[{"full_name":"Hövel, S.","first_name":"S.","last_name":"Hövel"},{"first_name":"N. C.","last_name":"Gerhardt","full_name":"Gerhardt, N. C."},{"first_name":"M. R.","last_name":"Hofmann","full_name":"Hofmann, M. R."},{"first_name":"F.-Y.","last_name":"Lo","full_name":"Lo, F.-Y."},{"last_name":"Ludwig","first_name":"A.","full_name":"Ludwig, A."},{"first_name":"D.","last_name":"Reuter","full_name":"Reuter, D."},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"last_name":"Schuster","first_name":"E.","full_name":"Schuster, E."},{"first_name":"H.","last_name":"Wende","full_name":"Wende, H."},{"last_name":"Keune","first_name":"W.","full_name":"Keune, W."},{"first_name":"O.","last_name":"Petracic","full_name":"Petracic, O."},{"full_name":"Westerholt, K.","last_name":"Westerholt","first_name":"K."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"date_updated":"2026-02-25T09:38:49Z","publication_status":"published","intvolume":"        93","article_type":"original"},{"status":"public","volume":93,"user_id":"15911","_id":"59694","publisher":"AIP Publishing","citation":{"mla":"Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i>, vol. 93, no. 2, AIP Publishing, 2008, doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","bibtex":"@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, volume={93}, DOI={<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, D. and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }","ama":"Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>. 2008;93(2). doi:<a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>","ieee":"S. Hövel <i>et al.</i>, “Room temperature electrical spin injection in remanence,” <i>Applied Physics Letters</i>, vol. 93, no. 2, 2008, doi: <a href=\"https://doi.org/10.1063/1.2957469\">10.1063/1.2957469</a>.","apa":"Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., Wieck, A. D., Schuster, E., Wende, H., Keune, W., Petracic, O., &#38; Westerholt, K. (2008). Room temperature electrical spin injection in remanence. <i>Applied Physics Letters</i>, <i>93</i>(2). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>","chicago":"Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” <i>Applied Physics Letters</i> 93, no. 2 (2008). <a href=\"https://doi.org/10.1063/1.2957469\">https://doi.org/10.1063/1.2957469</a>.","short":"S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters 93 (2008)."},"intvolume":"        93","publication_status":"published","date_updated":"2026-02-25T14:01:26Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Hövel, S.","last_name":"Hövel","first_name":"S."},{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"full_name":"Hofmann, M. R.","first_name":"M. R.","last_name":"Hofmann"},{"full_name":"Lo, F.-Y.","first_name":"F.-Y.","last_name":"Lo"},{"full_name":"Ludwig, A.","last_name":"Ludwig","first_name":"A."},{"full_name":"Reuter, D.","first_name":"D.","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"full_name":"Schuster, E.","last_name":"Schuster","first_name":"E."},{"full_name":"Wende, H.","first_name":"H.","last_name":"Wende"},{"first_name":"W.","last_name":"Keune","full_name":"Keune, W."},{"first_name":"O.","last_name":"Petracic","full_name":"Petracic, O."},{"first_name":"K.","last_name":"Westerholt","full_name":"Westerholt, K."}],"title":"Room temperature electrical spin injection in remanence","year":"2008","doi":"10.1063/1.2957469","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"<jats:p>We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.</jats:p>"}],"issue":"2","publication":"Applied Physics Letters","department":[{"_id":"977"}],"type":"journal_article","date_created":"2025-04-25T10:25:27Z"},{"_id":"1761","publisher":"AIP Publishing","article_number":"151109","volume":91,"user_id":"30525","doi":"10.1063/1.2799240","author":[{"first_name":"Carsten","last_name":"Rockstuhl","full_name":"Rockstuhl, Carsten"},{"full_name":"Lederer, Falk","last_name":"Lederer","first_name":"Falk"},{"full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","first_name":"Thomas","last_name":"Zentgraf","id":"30525"},{"full_name":"Giessen, Harald","last_name":"Giessen","first_name":"Harald"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2007","title":"Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays","status":"public","intvolume":"        91","publication_status":"published","date_updated":"2022-01-06T06:53:16Z","date_created":"2018-03-23T13:07:38Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"short":"C. 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Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. <i>Applied Physics Letters</i>, <i>91</i>(15). <a href=\"https://doi.org/10.1063/1.2799240\">https://doi.org/10.1063/1.2799240</a>","bibtex":"@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={<a href=\"https://doi.org/10.1063/1.2799240\">10.1063/1.2799240</a>}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }","ama":"Rockstuhl C, Lederer F, Zentgraf T, Giessen H. 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Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2753113\">https://doi.org/10.1063/1.2753113</a>.","mla":"Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” <i>Applied Physics Letters</i>, 262505, 2007, doi:<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>.","ama":"Lo F-Y, Melnikov A, Reuter D, et al. 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J. and et al.}, year={2007} }"},"publication":"Applied Physics Letters","date_created":"2019-03-26T10:23:42Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","author":[{"full_name":"Lo, F.-Y.","first_name":"F.-Y.","last_name":"Lo"},{"last_name":"Melnikov","first_name":"A.","full_name":"Melnikov, A."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"last_name":"Ney","first_name":"V.","full_name":"Ney, V."},{"first_name":"T.","last_name":"Kammermeier","full_name":"Kammermeier, T."},{"full_name":"Ney, A.","first_name":"A.","last_name":"Ney"},{"full_name":"Schörmann, J.","first_name":"J.","last_name":"Schörmann"},{"full_name":"Potthast, S.","last_name":"Potthast","first_name":"S."},{"last_name":"As","first_name":"D. J.","full_name":"As, D. J."},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2007","title":"Magnetic and structural properties of Gd-implanted zinc-blende GaN","status":"public","publication_status":"published","date_updated":"2022-01-06T07:03:57Z","_id":"8630","language":[{"iso":"eng"}],"article_number":"262505","user_id":"42514","doi":"10.1063/1.2753113"},{"author":[{"full_name":"Mehta, M.","first_name":"M.","last_name":"Mehta"},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"full_name":"Melnikov, A.","first_name":"A.","last_name":"Melnikov"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"last_name":"Remhof","first_name":"A.","full_name":"Remhof, A."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2007","title":"Focused ion beam implantation induced site-selective growth of InAs quantum dots","status":"public","publication_status":"published","date_updated":"2022-01-06T07:03:57Z","language":[{"iso":"eng"}],"_id":"8632","article_number":"123108","user_id":"42514","doi":"10.1063/1.2786836","citation":{"chicago":"Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2786836\">https://doi.org/10.1063/1.2786836</a>.","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007).","ieee":"M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. 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Focused ion beam implantation induced site-selective growth of InAs quantum dots. <i>Applied Physics Letters</i>. 2007. doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>."},"publication":"Applied Physics Letters","date_created":"2019-03-26T10:26:08Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article"},{"quality_controlled":"1","citation":{"mla":"Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","ama":"Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>. Published online 2007. doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>","bibtex":"@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }","apa":"Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., &#38; Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>, Article 123108. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>","ieee":"T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” <i>Applied Physics Letters</i>, Art. no. 123108, 2007, doi: <a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","chicago":"Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>.","short":"T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007)."},"status":"public","user_id":"23547","_id":"25986","abstract":[{"lang":"eng","text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support."}],"extern":"1","publication":"Applied Physics Letters","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"date_created":"2021-10-09T09:40:39Z","date_updated":"2023-03-09T08:49:01Z","publication_status":"published","article_type":"original","year":"2007","title":"Crystalline ZnO with an enhanced surface area obtained by nanocasting","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"T.","last_name":"Waitz","full_name":"Waitz, T."},{"id":"23547","full_name":"Tiemann, Michael","last_name":"Tiemann","first_name":"Michael","orcid":"0000-0003-1711-2722"},{"first_name":"P. J.","last_name":"Klar","full_name":"Klar, P. J."},{"full_name":"Sann, J.","last_name":"Sann","first_name":"J."},{"first_name":"J.","last_name":"Stehr","full_name":"Stehr, J."},{"first_name":"B. K.","last_name":"Meyer","full_name":"Meyer, B. K."}],"doi":"10.1063/1.2713872","article_number":"123108","language":[{"iso":"eng"}]},{"volume":90,"user_id":"20179","publisher":"AIP Publishing","_id":"39561","status":"public","citation":{"mla":"Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i>, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>.","bibtex":"@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }","ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. 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