[{"date_created":"2019-03-26T10:23:42Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","citation":{"apa":"Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2753113\">https://doi.org/10.1063/1.2753113</a>","ieee":"F.-Y. Lo <i>et al.</i>, “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” <i>Applied Physics Letters</i>, 2007.","chicago":"Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2753113\">https://doi.org/10.1063/1.2753113</a>.","short":"F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).","mla":"Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” <i>Applied Physics Letters</i>, 262505, 2007, doi:<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>.","ama":"Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. <i>Applied Physics Letters</i>. 2007. doi:<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>","bibtex":"@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={<a href=\"https://doi.org/10.1063/1.2753113\">10.1063/1.2753113</a>}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }"},"article_number":"262505","language":[{"iso":"eng"}],"_id":"8630","user_id":"42514","doi":"10.1063/1.2753113","year":"2007","title":"Magnetic and structural properties of Gd-implanted zinc-blende GaN","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"F.-Y.","last_name":"Lo","full_name":"Lo, F.-Y."},{"full_name":"Melnikov, A.","last_name":"Melnikov","first_name":"A."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"first_name":"V.","last_name":"Ney","full_name":"Ney, V."},{"full_name":"Kammermeier, T.","last_name":"Kammermeier","first_name":"T."},{"full_name":"Ney, A.","first_name":"A.","last_name":"Ney"},{"full_name":"Schörmann, J.","last_name":"Schörmann","first_name":"J."},{"last_name":"Potthast","first_name":"S.","full_name":"Potthast, S."},{"full_name":"As, D. J.","first_name":"D. J.","last_name":"As"},{"full_name":"Lischka, K.","first_name":"K.","last_name":"Lischka"}],"publication_status":"published","date_updated":"2022-01-06T07:03:57Z"},{"citation":{"ieee":"M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” <i>Applied Physics Letters</i>, 2007.","apa":"Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., &#38; Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2786836\">https://doi.org/10.1063/1.2786836</a>","short":"M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007).","chicago":"Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2786836\">https://doi.org/10.1063/1.2786836</a>.","mla":"Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>.","bibtex":"@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }","ama":"Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. <i>Applied Physics Letters</i>. 2007. doi:<a href=\"https://doi.org/10.1063/1.2786836\">10.1063/1.2786836</a>"},"publication":"Applied Physics Letters","date_created":"2019-03-26T10:26:08Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"M.","last_name":"Mehta","full_name":"Mehta, M."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"first_name":"A.","last_name":"Melnikov","full_name":"Melnikov, A."},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Remhof, A.","last_name":"Remhof","first_name":"A."}],"title":"Focused ion beam implantation induced site-selective growth of InAs quantum dots","year":"2007","status":"public","date_updated":"2022-01-06T07:03:57Z","publication_status":"published","_id":"8632","language":[{"iso":"eng"}],"article_number":"123108","doi":"10.1063/1.2786836","user_id":"42514"},{"status":"public","user_id":"23547","_id":"25986","quality_controlled":"1","citation":{"ieee":"T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” <i>Applied Physics Letters</i>, Art. no. 123108, 2007, doi: <a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","apa":"Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., &#38; Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>, Article 123108. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>","short":"T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007).","chicago":"Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 2007. <a href=\"https://doi.org/10.1063/1.2713872\">https://doi.org/10.1063/1.2713872</a>.","mla":"Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” <i>Applied Physics Letters</i>, 123108, 2007, doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>.","bibtex":"@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }","ama":"Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. <i>Applied Physics Letters</i>. Published online 2007. doi:<a href=\"https://doi.org/10.1063/1.2713872\">10.1063/1.2713872</a>"},"date_updated":"2023-03-09T08:49:01Z","publication_status":"published","article_type":"original","title":"Crystalline ZnO with an enhanced surface area obtained by nanocasting","year":"2007","author":[{"first_name":"T.","last_name":"Waitz","full_name":"Waitz, T."},{"last_name":"Tiemann","orcid":"0000-0003-1711-2722","first_name":"Michael","full_name":"Tiemann, Michael","id":"23547"},{"full_name":"Klar, P. J.","last_name":"Klar","first_name":"P. J."},{"last_name":"Sann","first_name":"J.","full_name":"Sann, J."},{"full_name":"Stehr, J.","first_name":"J.","last_name":"Stehr"},{"first_name":"B. K.","last_name":"Meyer","full_name":"Meyer, B. K."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.2713872","article_number":"123108","language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support."}],"extern":"1","publication":"Applied Physics Letters","type":"journal_article","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"date_created":"2021-10-09T09:40:39Z"},{"language":[{"iso":"eng"}],"article_number":"013501","doi":"10.1063/1.2426926","author":[{"full_name":"Scharnberg, M.","last_name":"Scharnberg","first_name":"M."},{"first_name":"V.","last_name":"Zaporojtchenko","full_name":"Zaporojtchenko, V."},{"full_name":"Adelung, R.","last_name":"Adelung","first_name":"R."},{"full_name":"Faupel, F.","first_name":"F.","last_name":"Faupel"},{"last_name":"Pannemann","first_name":"C.","full_name":"Pannemann, C."},{"last_name":"Diekmann","first_name":"T.","full_name":"Diekmann, T."},{"id":"20179","last_name":"Hilleringmann","first_name":"Ulrich","full_name":"Hilleringmann, Ulrich"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2007","title":"Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer","intvolume":"        90","date_updated":"2023-03-21T10:15:06Z","publication_status":"published","date_created":"2023-01-24T12:15:22Z","department":[{"_id":"59"}],"keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","publication":"Applied Physics Letters","issue":"1","publisher":"AIP Publishing","_id":"39561","volume":90,"user_id":"20179","status":"public","citation":{"chicago":"Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i> 90, no. 1 (2007). <a href=\"https://doi.org/10.1063/1.2426926\">https://doi.org/10.1063/1.2426926</a>.","short":"M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).","apa":"Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., &#38; Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. <i>Applied Physics Letters</i>, <i>90</i>(1), Article 013501. <a href=\"https://doi.org/10.1063/1.2426926\">https://doi.org/10.1063/1.2426926</a>","ieee":"M. Scharnberg <i>et al.</i>, “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” <i>Applied Physics Letters</i>, vol. 90, no. 1, Art. no. 013501, 2007, doi: <a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>.","ama":"Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. <i>Applied Physics Letters</i>. 2007;90(1). doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>","bibtex":"@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }","mla":"Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” <i>Applied Physics Letters</i>, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:<a href=\"https://doi.org/10.1063/1.2426926\">10.1063/1.2426926</a>."}},{"status":"public","_id":"7651","publisher":"AIP Publishing","volume":88,"user_id":"20798","citation":{"ieee":"C. Meier <i>et al.</i>, “Visible resonant modes in GaN-based photonic crystal membrane cavities,” <i>Applied Physics Letters</i>, vol. 88, no. 3, 2006.","apa":"Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. <i>Applied Physics Letters</i>, <i>88</i>(3). <a href=\"https://doi.org/10.1063/1.2166680\">https://doi.org/10.1063/1.2166680</a>","mla":"Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” <i>Applied Physics Letters</i>, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>.","bibtex":"@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }","chicago":"Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” <i>Applied Physics Letters</i> 88, no. 3 (2006). <a href=\"https://doi.org/10.1063/1.2166680\">https://doi.org/10.1063/1.2166680</a>.","short":"C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).","ama":"Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. <i>Applied Physics Letters</i>. 2006;88(3). doi:<a href=\"https://doi.org/10.1063/1.2166680\">10.1063/1.2166680</a>"},"publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Meier, Cedrik","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","id":"20798"},{"full_name":"Hennessy, Kevin","first_name":"Kevin","last_name":"Hennessy"},{"full_name":"Haberer, Elaine D.","last_name":"Haberer","first_name":"Elaine D."},{"full_name":"Sharma, Rajat","first_name":"Rajat","last_name":"Sharma"},{"first_name":"Yong-Seok","last_name":"Choi","full_name":"Choi, Yong-Seok"},{"first_name":"Kelly","last_name":"McGroddy","full_name":"McGroddy, Kelly"},{"last_name":"Keller","first_name":"Stacia","full_name":"Keller, Stacia"},{"full_name":"DenBaars, Steven P.","last_name":"DenBaars","first_name":"Steven P."},{"last_name":"Nakamura","first_name":"Shuji","full_name":"Nakamura, Shuji"},{"last_name":"Hu","first_name":"Evelyn L.","full_name":"Hu, Evelyn L."}],"year":"2006","title":"Visible resonant modes in GaN-based photonic crystal membrane cavities","intvolume":"        88","date_updated":"2022-01-06T07:03:43Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"031111","doi":"10.1063/1.2166680","issue":"3","publication":"Applied Physics Letters","extern":"1","date_created":"2019-02-13T11:41:17Z","department":[{"_id":"15"}],"type":"journal_article"},{"publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Knop, M.","first_name":"M.","last_name":"Knop"},{"last_name":"Wieser","first_name":"U.","full_name":"Wieser, U."},{"full_name":"Kunze, U.","last_name":"Kunze","first_name":"U."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"year":"2006","title":"Ballistic rectification in an asymmetric mesoscopic cross junction","status":"public","date_updated":"2022-01-06T07:03:58Z","publication_status":"published","language":[{"iso":"eng"}],"_id":"8648","article_number":"082110","doi":"10.1063/1.2179618","user_id":"42514","citation":{"ieee":"M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” <i>Applied Physics Letters</i>, 2006.","apa":"Knop, M., Wieser, U., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2179618\">https://doi.org/10.1063/1.2179618</a>","short":"M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).","chicago":"Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2179618\">https://doi.org/10.1063/1.2179618</a>.","mla":"Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” <i>Applied Physics Letters</i>, 082110, 2006, doi:<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>.","bibtex":"@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }","ama":"Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2179618\">10.1063/1.2179618</a>"},"publication":"Applied Physics Letters","date_created":"2019-03-27T07:54:36Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article"},{"_id":"8654","language":[{"iso":"eng"}],"article_number":"121115","user_id":"42514","doi":"10.1063/1.2188057","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Schmidt, R.","first_name":"R.","last_name":"Schmidt"},{"full_name":"Scholz, U.","last_name":"Scholz","first_name":"U."},{"full_name":"Vitzethum, M.","last_name":"Vitzethum","first_name":"M."},{"last_name":"Fix","first_name":"R.","full_name":"Fix, R."},{"first_name":"C.","last_name":"Metzner","full_name":"Metzner, C."},{"first_name":"P.","last_name":"Kailuweit","full_name":"Kailuweit, P."},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A.","last_name":"Wieck","first_name":"A."},{"full_name":"Hübner, M. C.","last_name":"Hübner","first_name":"M. C."},{"last_name":"Stufler","first_name":"S.","full_name":"Stufler, S."},{"full_name":"Zrenner, A.","first_name":"A.","last_name":"Zrenner"},{"last_name":"Malzer","first_name":"S.","full_name":"Malzer, S."},{"last_name":"Döhler","first_name":"G. H.","full_name":"Döhler, G. H."}],"year":"2006","title":"Fabrication of genuine single-quantum-dot light-emitting diodes","status":"public","publication_status":"published","date_updated":"2022-01-06T07:03:58Z","date_created":"2019-03-27T08:21:39Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"mla":"Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” <i>Applied Physics Letters</i>, 121115, 2006, doi:<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>.","apa":"Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2188057\">https://doi.org/10.1063/1.2188057</a>","ieee":"R. Schmidt <i>et al.</i>, “Fabrication of genuine single-quantum-dot light-emitting diodes,” <i>Applied Physics Letters</i>, 2006.","chicago":"Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2188057\">https://doi.org/10.1063/1.2188057</a>.","short":"R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006).","ama":"Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>","bibtex":"@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={<a href=\"https://doi.org/10.1063/1.2188057\">10.1063/1.2188057</a>}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }"},"publication":"Applied Physics Letters"},{"publication":"Applied Physics Letters","citation":{"ieee":"V. Stavarache <i>et al.</i>, “Control of quantum dot excitons by lateral electric fields,” <i>Applied Physics Letters</i>, 2006.","apa":"Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton, R., &#38; Bayer, M. (2006). Control of quantum dot excitons by lateral electric fields. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2345233\">https://doi.org/10.1063/1.2345233</a>","short":"V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton, M. Bayer, Applied Physics Letters (2006).","chicago":"Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2345233\">https://doi.org/10.1063/1.2345233</a>.","mla":"Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric Fields.” <i>Applied Physics Letters</i>, 123105, 2006, doi:<a href=\"https://doi.org/10.1063/1.2345233\">10.1063/1.2345233</a>.","bibtex":"@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control of quantum dot excitons by lateral electric fields}, DOI={<a href=\"https://doi.org/10.1063/1.2345233\">10.1063/1.2345233</a>}, number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R. and Bayer, M.}, year={2006} }","ama":"Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2345233\">10.1063/1.2345233</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T08:39:57Z","publication_status":"published","date_updated":"2022-01-06T07:03:58Z","title":"Control of quantum dot excitons by lateral electric fields","status":"public","year":"2006","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"V.","last_name":"Stavarache","full_name":"Stavarache, V."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"first_name":"M.","last_name":"Schwab","full_name":"Schwab, M."},{"full_name":"Yakovlev, D. R.","first_name":"D. R.","last_name":"Yakovlev"},{"full_name":"Oulton, R.","last_name":"Oulton","first_name":"R."},{"full_name":"Bayer, M.","last_name":"Bayer","first_name":"M."}],"user_id":"42514","doi":"10.1063/1.2345233","article_number":"123105","_id":"8665","language":[{"iso":"eng"}]},{"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T09:15:03Z","publication":"Applied Physics Letters","citation":{"chicago":"Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” <i>Applied Physics Letters</i>, 2006. <a href=\"https://doi.org/10.1063/1.2398909\">https://doi.org/10.1063/1.2398909</a>.","short":"P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).","apa":"Hohage, P. E., Bacher, G., Reuter, D., &#38; Wieck, A. D. (2006). Coherent spin oscillations in bulk GaAs at room temperature. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2398909\">https://doi.org/10.1063/1.2398909</a>","ieee":"P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations in bulk GaAs at room temperature,” <i>Applied Physics Letters</i>, 2006.","ama":"Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk GaAs at room temperature. <i>Applied Physics Letters</i>. 2006. doi:<a href=\"https://doi.org/10.1063/1.2398909\">10.1063/1.2398909</a>","bibtex":"@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations in bulk GaAs at room temperature}, DOI={<a href=\"https://doi.org/10.1063/1.2398909\">10.1063/1.2398909</a>}, number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }","mla":"Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” <i>Applied Physics Letters</i>, 231101, 2006, doi:<a href=\"https://doi.org/10.1063/1.2398909\">10.1063/1.2398909</a>."},"user_id":"42514","doi":"10.1063/1.2398909","article_number":"231101","_id":"8671","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:58Z","title":"Coherent spin oscillations in bulk GaAs at room temperature","year":"2006","status":"public","author":[{"full_name":"Hohage, P. E.","last_name":"Hohage","first_name":"P. E."},{"last_name":"Bacher","first_name":"G.","full_name":"Bacher, G."},{"id":"37763","first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]}},{"citation":{"short":"A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G. Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006).","chicago":"Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization of Heusler Alloys for Spintronic Devices.” <i>Applied Physics Letters</i> 89, no. 1 (2006). <a href=\"https://doi.org/10.1063/1.2219333\">https://doi.org/10.1063/1.2219333</a>.","apa":"Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J., Reiss, G., Ebert, H., &#38; Hütten, A. (2006). Inverted spin polarization of Heusler alloys for spintronic devices. <i>Applied Physics Letters</i>, <i>89</i>(1), Article 012502. <a href=\"https://doi.org/10.1063/1.2219333\">https://doi.org/10.1063/1.2219333</a>","ieee":"A. Thomas <i>et al.</i>, “Inverted spin polarization of Heusler alloys for spintronic devices,” <i>Applied Physics Letters</i>, vol. 89, no. 1, Art. no. 012502, 2006, doi: <a href=\"https://doi.org/10.1063/1.2219333\">10.1063/1.2219333</a>.","ama":"Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys for spintronic devices. <i>Applied Physics Letters</i>. 2006;89(1). doi:<a href=\"https://doi.org/10.1063/1.2219333\">10.1063/1.2219333</a>","bibtex":"@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006, title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89}, DOI={<a href=\"https://doi.org/10.1063/1.2219333\">10.1063/1.2219333</a>}, number={1012502}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas, Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006} }","mla":"Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic Devices.” <i>Applied Physics Letters</i>, vol. 89, no. 1, 012502, AIP Publishing, 2006, doi:<a href=\"https://doi.org/10.1063/1.2219333\">10.1063/1.2219333</a>."},"status":"public","user_id":"26883","volume":89,"_id":"29684","publisher":"AIP Publishing","extern":"1","issue":"1","publication":"Applied Physics Letters","type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"department":[{"_id":"15"}],"date_created":"2022-01-31T10:16:33Z","publication_status":"published","date_updated":"2024-04-23T12:18:59Z","intvolume":"        89","year":"2006","title":"Inverted spin polarization of Heusler alloys for spintronic devices","author":[{"last_name":"Thomas","first_name":"Andy","full_name":"Thomas, Andy"},{"first_name":"Dirk","last_name":"Meyners","full_name":"Meyners, Dirk"},{"last_name":"Ebke","first_name":"Daniel","full_name":"Ebke, Daniel"},{"last_name":"Liu","first_name":"Ning-Ning","full_name":"Liu, Ning-Ning"},{"id":"26883","first_name":"Marc","last_name":"Sacher","orcid":"0000-0001-6217-336X","full_name":"Sacher, Marc"},{"first_name":"Jan","last_name":"Schmalhorst","full_name":"Schmalhorst, Jan"},{"first_name":"Günter","last_name":"Reiss","full_name":"Reiss, Günter"},{"full_name":"Ebert, Hubert","first_name":"Hubert","last_name":"Ebert"},{"full_name":"Hütten, Andreas","first_name":"Andreas","last_name":"Hütten"}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.2219333","article_number":"012502","language":[{"iso":"eng"}]},{"date_created":"2019-02-13T11:47:23Z","department":[{"_id":"15"}],"type":"journal_article","issue":"24","publication":"Applied Physics Letters","extern":"1","language":[{"iso":"eng"}],"article_number":"243101","doi":"10.1063/1.2147713","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"Y.-S.","last_name":"Choi","full_name":"Choi, Y.-S."},{"full_name":"Hennessy, K.","last_name":"Hennessy","first_name":"K."},{"full_name":"Sharma, R.","last_name":"Sharma","first_name":"R."},{"full_name":"Haberer, E.","last_name":"Haberer","first_name":"E."},{"last_name":"Gao","first_name":"Y.","full_name":"Gao, Y."},{"first_name":"S. P.","last_name":"DenBaars","full_name":"DenBaars, S. P."},{"last_name":"Nakamura","first_name":"S.","full_name":"Nakamura, S."},{"full_name":"Hu, E. L.","last_name":"Hu","first_name":"E. L."},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"}],"year":"2005","title":"GaN blue photonic crystal membrane nanocavities","intvolume":"        87","date_updated":"2022-01-06T07:03:43Z","publication_status":"published","citation":{"ieee":"Y.-S. Choi <i>et al.</i>, “GaN blue photonic crystal membrane nanocavities,” <i>Applied Physics Letters</i>, vol. 87, no. 24, 2005.","apa":"Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P., … Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. <i>Applied Physics Letters</i>, <i>87</i>(24). <a href=\"https://doi.org/10.1063/1.2147713\">https://doi.org/10.1063/1.2147713</a>","short":"Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).","chicago":"Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.” <i>Applied Physics Letters</i> 87, no. 24 (2005). <a href=\"https://doi.org/10.1063/1.2147713\">https://doi.org/10.1063/1.2147713</a>.","mla":"Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” <i>Applied Physics Letters</i>, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2147713\">10.1063/1.2147713</a>.","bibtex":"@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005, title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2147713\">10.1063/1.2147713</a>}, number={24243101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }","ama":"Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. <i>Applied Physics Letters</i>. 2005;87(24). doi:<a href=\"https://doi.org/10.1063/1.2147713\">10.1063/1.2147713</a>"},"publisher":"AIP Publishing","_id":"7653","volume":87,"user_id":"20798","status":"public"},{"citation":{"ieee":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” <i>Applied Physics Letters</i>, vol. 87, no. 16, 2005.","apa":"Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>, <i>87</i>(16). <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>","chicago":"Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i> 87, no. 16 (2005). <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>.","short":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 87 (2005).","mla":"Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i>, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>.","bibtex":"@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>}, number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }","ama":"Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>. 2005;87(16). doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>"},"status":"public","user_id":"20798","volume":87,"_id":"7654","publisher":"AIP Publishing","extern":"1","publication":"Applied Physics Letters","issue":"16","type":"journal_article","department":[{"_id":"15"}],"date_created":"2019-02-13T11:48:22Z","publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        87","year":"2005","title":"Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Lüttjohann, Stephan","first_name":"Stephan","last_name":"Lüttjohann"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","full_name":"Meier, Cedrik","id":"20798"},{"full_name":"Lorke, Axel","first_name":"Axel","last_name":"Lorke"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."}],"doi":"10.1063/1.2112192","article_number":"163117","language":[{"iso":"eng"}]},{"extern":"1","issue":"10","publication":"Applied Physics Letters","department":[{"_id":"15"}],"type":"journal_article","date_created":"2019-02-13T11:48:57Z","intvolume":"        87","publication_status":"published","date_updated":"2022-01-06T07:03:43Z","author":[{"first_name":"A.","last_name":"David","full_name":"David, A."},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","id":"20798"},{"full_name":"Sharma, R.","first_name":"R.","last_name":"Sharma"},{"full_name":"Diana, F. S.","first_name":"F. S.","last_name":"Diana"},{"last_name":"DenBaars","first_name":"S. P.","full_name":"DenBaars, S. P."},{"full_name":"Hu, E.","first_name":"E.","last_name":"Hu"},{"full_name":"Nakamura, S.","last_name":"Nakamura","first_name":"S."},{"full_name":"Weisbuch, C.","first_name":"C.","last_name":"Weisbuch"},{"last_name":"Benisty","first_name":"H.","full_name":"Benisty, H."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction","year":"2005","doi":"10.1063/1.2039987","language":[{"iso":"eng"}],"article_number":"101107","citation":{"ama":"David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. <i>Applied Physics Letters</i>. 2005;87(10). doi:<a href=\"https://doi.org/10.1063/1.2039987\">10.1063/1.2039987</a>","bibtex":"@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005, title={Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2039987\">10.1063/1.2039987</a>}, number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005} }","mla":"David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” <i>Applied Physics Letters</i>, vol. 87, no. 10, 101107, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2039987\">10.1063/1.2039987</a>.","chicago":"David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” <i>Applied Physics Letters</i> 87, no. 10 (2005). <a href=\"https://doi.org/10.1063/1.2039987\">https://doi.org/10.1063/1.2039987</a>.","short":"A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005).","apa":"David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., … Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. <i>Applied Physics Letters</i>, <i>87</i>(10). <a href=\"https://doi.org/10.1063/1.2039987\">https://doi.org/10.1063/1.2039987</a>","ieee":"A. David <i>et al.</i>, “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” <i>Applied Physics Letters</i>, vol. 87, no. 10, 2005."},"status":"public","volume":87,"user_id":"20798","_id":"7655","publisher":"AIP Publishing"},{"year":"2005","title":"Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"R.","last_name":"Sharma","full_name":"Sharma, R."},{"first_name":"E. D.","last_name":"Haberer","full_name":"Haberer, E. D."},{"full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798"},{"first_name":"E. L.","last_name":"Hu","full_name":"Hu, E. L."},{"first_name":"S.","last_name":"Nakamura","full_name":"Nakamura, S."}],"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        87","article_number":"051107","language":[{"iso":"eng"}],"doi":"10.1063/1.2008380","issue":"5","publication":"Applied Physics Letters","extern":"1","date_created":"2019-02-13T11:50:37Z","type":"journal_article","department":[{"_id":"15"}],"status":"public","publisher":"AIP Publishing","_id":"7656","user_id":"20798","volume":87,"citation":{"chicago":"Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” <i>Applied Physics Letters</i> 87, no. 5 (2005). <a href=\"https://doi.org/10.1063/1.2008380\">https://doi.org/10.1063/1.2008380</a>.","short":"R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters 87 (2005).","ama":"Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. <i>Applied Physics Letters</i>. 2005;87(5). doi:<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>","bibtex":"@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>}, number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}, year={2005} }","mla":"Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” <i>Applied Physics Letters</i>, vol. 87, no. 5, 051107, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>.","apa":"Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., &#38; Nakamura, S. (2005). Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. <i>Applied Physics Letters</i>, <i>87</i>(5). <a href=\"https://doi.org/10.1063/1.2008380\">https://doi.org/10.1063/1.2008380</a>","ieee":"R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” <i>Applied Physics Letters</i>, vol. 87, no. 5, 2005."}},{"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        86","year":"2005","title":"Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Chakraborty, Arpan","last_name":"Chakraborty","first_name":"Arpan"},{"first_name":"Stacia","last_name":"Keller","full_name":"Keller, Stacia"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","full_name":"Meier, Cedrik","id":"20798"},{"last_name":"Haskell","first_name":"Benjamin A.","full_name":"Haskell, Benjamin A."},{"full_name":"Keller, Salka","first_name":"Salka","last_name":"Keller"},{"full_name":"Waltereit, Patrick","last_name":"Waltereit","first_name":"Patrick"},{"full_name":"DenBaars, Steven P.","first_name":"Steven P.","last_name":"DenBaars"},{"first_name":"Shuji","last_name":"Nakamura","full_name":"Nakamura, Shuji"},{"full_name":"Speck, James S.","last_name":"Speck","first_name":"James S."},{"full_name":"Mishra, Umesh K.","first_name":"Umesh K.","last_name":"Mishra"}],"doi":"10.1063/1.1851007","article_number":"031901","language":[{"iso":"eng"}],"extern":"1","publication":"Applied Physics Letters","issue":"3","type":"journal_article","department":[{"_id":"15"}],"date_created":"2019-02-13T12:27:05Z","status":"public","user_id":"20798","volume":86,"_id":"7659","publisher":"AIP Publishing","citation":{"bibtex":"@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1851007\">10.1063/1.1851007</a>}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }","ama":"Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. <i>Applied Physics Letters</i>. 2005;86(3). doi:<a href=\"https://doi.org/10.1063/1.1851007\">10.1063/1.1851007</a>","mla":"Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” <i>Applied Physics Letters</i>, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1851007\">10.1063/1.1851007</a>.","chicago":"Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” <i>Applied Physics Letters</i> 86, no. 3 (2005). <a href=\"https://doi.org/10.1063/1.1851007\">https://doi.org/10.1063/1.1851007</a>.","short":"A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86 (2005).","ieee":"A. Chakraborty <i>et al.</i>, “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” <i>Applied Physics Letters</i>, vol. 86, no. 3, 2005.","apa":"Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. <i>Applied Physics Letters</i>, <i>86</i>(3). <a href=\"https://doi.org/10.1063/1.1851007\">https://doi.org/10.1063/1.1851007</a>"}},{"title":"Depletion characteristics of two-dimensional lateral p‐n-junctions","year":"2005","status":"public","author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Werner","first_name":"C.","full_name":"Werner, C."},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"full_name":"Petrosyan, S.","last_name":"Petrosyan","first_name":"S."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:03:58Z","article_number":"162110","_id":"8679","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1063/1.1897829","publication":"Applied Physics Letters","citation":{"mla":"Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” <i>Applied Physics Letters</i>, 162110, 2005, doi:<a href=\"https://doi.org/10.1063/1.1897829\">10.1063/1.1897829</a>.","bibtex":"@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics of two-dimensional lateral p‐n-junctions}, DOI={<a href=\"https://doi.org/10.1063/1.1897829\">10.1063/1.1897829</a>}, number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner, C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }","ama":"Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral p‐n-junctions. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.1897829\">10.1063/1.1897829</a>","ieee":"D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics of two-dimensional lateral p‐n-junctions,” <i>Applied Physics Letters</i>, 2005.","apa":"Reuter, D., Werner, C., Wieck, A. D., &#38; Petrosyan, S. (2005). Depletion characteristics of two-dimensional lateral p‐n-junctions. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.1897829\">https://doi.org/10.1063/1.1897829</a>","chicago":"Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.1897829\">https://doi.org/10.1063/1.1897829</a>.","short":"D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005)."},"date_created":"2019-03-27T09:32:08Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T10:19:20Z","citation":{"chicago":"Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.2001740\">https://doi.org/10.1063/1.2001740</a>.","ama":"Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.2001740\">10.1063/1.2001740</a>","short":"T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005).","bibtex":"@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling using a driven electron ratchet in a two-dimensional electron system}, DOI={<a href=\"https://doi.org/10.1063/1.2001740\">10.1063/1.2001740</a>}, number={042104}, journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }","mla":"Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” <i>Applied Physics Letters</i>, 042104, 2005, doi:<a href=\"https://doi.org/10.1063/1.2001740\">10.1063/1.2001740</a>.","apa":"Müller, T., Würtz, A., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2005). Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2001740\">https://doi.org/10.1063/1.2001740</a>","ieee":"T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling using a driven electron ratchet in a two-dimensional electron system,” <i>Applied Physics Letters</i>, 2005."},"publication":"Applied Physics Letters","user_id":"42514","doi":"10.1063/1.2001740","language":[{"iso":"eng"}],"_id":"8683","article_number":"042104","publication_status":"published","date_updated":"2022-01-06T07:03:58Z","author":[{"last_name":"Müller","first_name":"T.","full_name":"Müller, T."},{"first_name":"A.","last_name":"Würtz","full_name":"Würtz, A."},{"full_name":"Lorke, A.","first_name":"A.","last_name":"Lorke"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2005","title":"Wave-form sampling using a driven electron ratchet in a two-dimensional electron system","status":"public"},{"date_created":"2019-03-27T10:21:16Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","citation":{"mla":"Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” <i>Applied Physics Letters</i>, 032502, 2005, doi:<a href=\"https://doi.org/10.1063/1.1996843\">10.1063/1.1996843</a>.","bibtex":"@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005, title={Electron spin injection into GaAs from ferromagnetic contacts in remanence}, DOI={<a href=\"https://doi.org/10.1063/1.1996843\">10.1063/1.1996843</a>}, number={032502}, journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Westerholt, K.}, year={2005} }","ama":"Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from ferromagnetic contacts in remanence. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.1996843\">10.1063/1.1996843</a>","ieee":"N. C. Gerhardt <i>et al.</i>, “Electron spin injection into GaAs from ferromagnetic contacts in remanence,” <i>Applied Physics Letters</i>, 2005.","apa":"Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic contacts in remanence. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.1996843\">https://doi.org/10.1063/1.1996843</a>","short":"N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005).","chicago":"Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.1996843\">https://doi.org/10.1063/1.1996843</a>."},"article_number":"032502","language":[{"iso":"eng"}],"_id":"8685","doi":"10.1063/1.1996843","user_id":"42514","status":"public","title":"Electron spin injection into GaAs from ferromagnetic contacts in remanence","year":"2005","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"N. C.","last_name":"Gerhardt","full_name":"Gerhardt, N. C."},{"full_name":"Hövel, S.","last_name":"Hövel","first_name":"S."},{"full_name":"Brenner, C.","last_name":"Brenner","first_name":"C."},{"first_name":"M. R.","last_name":"Hofmann","full_name":"Hofmann, M. R."},{"first_name":"F.-Y.","last_name":"Lo","full_name":"Lo, F.-Y."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"last_name":"Schuster","first_name":"E.","full_name":"Schuster, E."},{"full_name":"Keune, W.","last_name":"Keune","first_name":"W."},{"last_name":"Westerholt","first_name":"K.","full_name":"Westerholt, K."}],"date_updated":"2022-01-06T07:03:58Z","publication_status":"published"},{"date_created":"2019-03-27T10:39:18Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Applied Physics Letters","citation":{"chicago":"Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>.","short":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005).","apa":"Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>","ieee":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” <i>Applied Physics Letters</i>, 2005.","ama":"Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>","bibtex":"@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, DOI={<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>}, number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }","mla":"Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i>, 163117, 2005, doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>."},"article_number":"163117","language":[{"iso":"eng"}],"_id":"8690","user_id":"42514","doi":"10.1063/1.2112192","status":"public","title":"Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra","year":"2005","author":[{"first_name":"Stephan","last_name":"Lüttjohann","full_name":"Lüttjohann, Stephan"},{"full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier"},{"last_name":"Lorke","first_name":"Axel","full_name":"Lorke, Axel"},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:03:59Z"},{"_id":"8691","language":[{"iso":"eng"}],"article_number":"232108","user_id":"42514","doi":"10.1063/1.2139994","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Grbić, Boris","last_name":"Grbić","first_name":"Boris"},{"full_name":"Leturcq, Renaud","last_name":"Leturcq","first_name":"Renaud"},{"full_name":"Ensslin, Klaus","last_name":"Ensslin","first_name":"Klaus"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."}],"title":"Single-hole transistor in p-type GaAs∕AlGaAs heterostructures","year":"2005","status":"public","publication_status":"published","date_updated":"2022-01-06T07:03:59Z","date_created":"2019-03-27T11:12:28Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"chicago":"Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D. Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.2139994\">https://doi.org/10.1063/1.2139994</a>.","short":"B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2005).","ieee":"B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole transistor in p-type GaAs∕AlGaAs heterostructures,” <i>Applied Physics Letters</i>, 2005.","apa":"Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., &#38; Wieck, A. D. (2005). Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2139994\">https://doi.org/10.1063/1.2139994</a>","bibtex":"@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1063/1.2139994\">10.1063/1.2139994</a>}, number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }","ama":"Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.2139994\">10.1063/1.2139994</a>","mla":"Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 232108, 2005, doi:<a href=\"https://doi.org/10.1063/1.2139994\">10.1063/1.2139994</a>."},"publication":"Applied Physics Letters"}]