[{"date_created":"2019-02-13T11:47:23Z","type":"journal_article","department":[{"_id":"15"}],"publication":"Applied Physics Letters","issue":"24","extern":"1","article_number":"243101","language":[{"iso":"eng"}],"doi":"10.1063/1.2147713","title":"GaN blue photonic crystal membrane nanocavities","year":"2005","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Choi, Y.-S.","last_name":"Choi","first_name":"Y.-S."},{"last_name":"Hennessy","first_name":"K.","full_name":"Hennessy, K."},{"first_name":"R.","last_name":"Sharma","full_name":"Sharma, R."},{"first_name":"E.","last_name":"Haberer","full_name":"Haberer, E."},{"full_name":"Gao, Y.","last_name":"Gao","first_name":"Y."},{"first_name":"S. P.","last_name":"DenBaars","full_name":"DenBaars, S. P."},{"full_name":"Nakamura, S.","last_name":"Nakamura","first_name":"S."},{"last_name":"Hu","first_name":"E. L.","full_name":"Hu, E. L."},{"full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798"}],"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        87","citation":{"bibtex":"@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005, title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2147713\">10.1063/1.2147713</a>}, number={24243101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }","ama":"Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. <i>Applied Physics Letters</i>. 2005;87(24). doi:<a href=\"https://doi.org/10.1063/1.2147713\">10.1063/1.2147713</a>","mla":"Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” <i>Applied Physics Letters</i>, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2147713\">10.1063/1.2147713</a>.","short":"Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).","chicago":"Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.” <i>Applied Physics Letters</i> 87, no. 24 (2005). <a href=\"https://doi.org/10.1063/1.2147713\">https://doi.org/10.1063/1.2147713</a>.","ieee":"Y.-S. Choi <i>et al.</i>, “GaN blue photonic crystal membrane nanocavities,” <i>Applied Physics Letters</i>, vol. 87, no. 24, 2005.","apa":"Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P., … Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. <i>Applied Physics Letters</i>, <i>87</i>(24). <a href=\"https://doi.org/10.1063/1.2147713\">https://doi.org/10.1063/1.2147713</a>"},"publisher":"AIP Publishing","_id":"7653","user_id":"20798","volume":87,"status":"public"},{"citation":{"mla":"Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i>, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>.","bibtex":"@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>}, number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }","ama":"Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>. 2005;87(16). doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>","ieee":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” <i>Applied Physics Letters</i>, vol. 87, no. 16, 2005.","apa":"Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>, <i>87</i>(16). <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>","chicago":"Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i> 87, no. 16 (2005). <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>.","short":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 87 (2005)."},"user_id":"20798","volume":87,"_id":"7654","publisher":"AIP Publishing","status":"public","type":"journal_article","department":[{"_id":"15"}],"date_created":"2019-02-13T11:48:22Z","extern":"1","issue":"16","publication":"Applied Physics Letters","doi":"10.1063/1.2112192","article_number":"163117","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        87","title":"Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra","year":"2005","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"Stephan","last_name":"Lüttjohann","full_name":"Lüttjohann, Stephan"},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","id":"20798"},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."}]},{"article_number":"101107","language":[{"iso":"eng"}],"doi":"10.1063/1.2039987","title":"Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction","year":"2005","author":[{"full_name":"David, A.","last_name":"David","first_name":"A."},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"full_name":"Sharma, R.","first_name":"R.","last_name":"Sharma"},{"first_name":"F. S.","last_name":"Diana","full_name":"Diana, F. S."},{"last_name":"DenBaars","first_name":"S. P.","full_name":"DenBaars, S. P."},{"full_name":"Hu, E.","last_name":"Hu","first_name":"E."},{"last_name":"Nakamura","first_name":"S.","full_name":"Nakamura, S."},{"full_name":"Weisbuch, C.","last_name":"Weisbuch","first_name":"C."},{"last_name":"Benisty","first_name":"H.","full_name":"Benisty, H."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2022-01-06T07:03:43Z","intvolume":"        87","date_created":"2019-02-13T11:48:57Z","type":"journal_article","department":[{"_id":"15"}],"issue":"10","publication":"Applied Physics Letters","extern":"1","publisher":"AIP Publishing","_id":"7655","user_id":"20798","volume":87,"status":"public","citation":{"mla":"David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” <i>Applied Physics Letters</i>, vol. 87, no. 10, 101107, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2039987\">10.1063/1.2039987</a>.","bibtex":"@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005, title={Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2039987\">10.1063/1.2039987</a>}, number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005} }","ama":"David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. <i>Applied Physics Letters</i>. 2005;87(10). doi:<a href=\"https://doi.org/10.1063/1.2039987\">10.1063/1.2039987</a>","ieee":"A. David <i>et al.</i>, “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” <i>Applied Physics Letters</i>, vol. 87, no. 10, 2005.","apa":"David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., … Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. <i>Applied Physics Letters</i>, <i>87</i>(10). <a href=\"https://doi.org/10.1063/1.2039987\">https://doi.org/10.1063/1.2039987</a>","short":"A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005).","chicago":"David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” <i>Applied Physics Letters</i> 87, no. 10 (2005). <a href=\"https://doi.org/10.1063/1.2039987\">https://doi.org/10.1063/1.2039987</a>."}},{"intvolume":"        87","publication_status":"published","date_updated":"2022-01-06T07:03:43Z","author":[{"last_name":"Sharma","first_name":"R.","full_name":"Sharma, R."},{"full_name":"Haberer, E. D.","first_name":"E. D.","last_name":"Haberer"},{"first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798"},{"first_name":"E. L.","last_name":"Hu","full_name":"Hu, E. L."},{"full_name":"Nakamura, S.","last_name":"Nakamura","first_name":"S."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching","year":"2005","doi":"10.1063/1.2008380","language":[{"iso":"eng"}],"article_number":"051107","extern":"1","publication":"Applied Physics Letters","issue":"5","department":[{"_id":"15"}],"type":"journal_article","date_created":"2019-02-13T11:50:37Z","status":"public","volume":87,"user_id":"20798","publisher":"AIP Publishing","_id":"7656","citation":{"bibtex":"@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>}, number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}, year={2005} }","chicago":"Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” <i>Applied Physics Letters</i> 87, no. 5 (2005). <a href=\"https://doi.org/10.1063/1.2008380\">https://doi.org/10.1063/1.2008380</a>.","short":"R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters 87 (2005).","ama":"Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. <i>Applied Physics Letters</i>. 2005;87(5). doi:<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>","ieee":"R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” <i>Applied Physics Letters</i>, vol. 87, no. 5, 2005.","mla":"Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” <i>Applied Physics Letters</i>, vol. 87, no. 5, 051107, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2008380\">10.1063/1.2008380</a>.","apa":"Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., &#38; Nakamura, S. (2005). Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. <i>Applied Physics Letters</i>, <i>87</i>(5). <a href=\"https://doi.org/10.1063/1.2008380\">https://doi.org/10.1063/1.2008380</a>"}},{"date_created":"2019-02-13T12:27:05Z","department":[{"_id":"15"}],"type":"journal_article","issue":"3","publication":"Applied Physics Letters","extern":"1","language":[{"iso":"eng"}],"article_number":"031901","doi":"10.1063/1.1851007","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Chakraborty","first_name":"Arpan","full_name":"Chakraborty, Arpan"},{"last_name":"Keller","first_name":"Stacia","full_name":"Keller, Stacia"},{"full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","id":"20798"},{"full_name":"Haskell, Benjamin A.","last_name":"Haskell","first_name":"Benjamin A."},{"first_name":"Salka","last_name":"Keller","full_name":"Keller, Salka"},{"first_name":"Patrick","last_name":"Waltereit","full_name":"Waltereit, Patrick"},{"first_name":"Steven P.","last_name":"DenBaars","full_name":"DenBaars, Steven P."},{"last_name":"Nakamura","first_name":"Shuji","full_name":"Nakamura, Shuji"},{"full_name":"Speck, James S.","last_name":"Speck","first_name":"James S."},{"full_name":"Mishra, Umesh K.","first_name":"Umesh K.","last_name":"Mishra"}],"title":"Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN","year":"2005","intvolume":"        86","date_updated":"2022-01-06T07:03:43Z","publication_status":"published","citation":{"bibtex":"@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1851007\">10.1063/1.1851007</a>}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }","ama":"Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. <i>Applied Physics Letters</i>. 2005;86(3). doi:<a href=\"https://doi.org/10.1063/1.1851007\">10.1063/1.1851007</a>","mla":"Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” <i>Applied Physics Letters</i>, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1851007\">10.1063/1.1851007</a>.","chicago":"Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” <i>Applied Physics Letters</i> 86, no. 3 (2005). <a href=\"https://doi.org/10.1063/1.1851007\">https://doi.org/10.1063/1.1851007</a>.","short":"A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86 (2005).","ieee":"A. Chakraborty <i>et al.</i>, “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” <i>Applied Physics Letters</i>, vol. 86, no. 3, 2005.","apa":"Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. <i>Applied Physics Letters</i>, <i>86</i>(3). <a href=\"https://doi.org/10.1063/1.1851007\">https://doi.org/10.1063/1.1851007</a>"},"_id":"7659","publisher":"AIP Publishing","volume":86,"user_id":"20798","status":"public"},{"date_created":"2019-03-27T09:32:08Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"bibtex":"@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics of two-dimensional lateral p‐n-junctions}, DOI={<a href=\"https://doi.org/10.1063/1.1897829\">10.1063/1.1897829</a>}, number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner, C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }","ama":"Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral p‐n-junctions. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.1897829\">10.1063/1.1897829</a>","mla":"Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” <i>Applied Physics Letters</i>, 162110, 2005, doi:<a href=\"https://doi.org/10.1063/1.1897829\">10.1063/1.1897829</a>.","chicago":"Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.1897829\">https://doi.org/10.1063/1.1897829</a>.","short":"D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005).","ieee":"D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics of two-dimensional lateral p‐n-junctions,” <i>Applied Physics Letters</i>, 2005.","apa":"Reuter, D., Werner, C., Wieck, A. D., &#38; Petrosyan, S. (2005). Depletion characteristics of two-dimensional lateral p‐n-junctions. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.1897829\">https://doi.org/10.1063/1.1897829</a>"},"publication":"Applied Physics Letters","_id":"8679","language":[{"iso":"eng"}],"article_number":"162110","user_id":"42514","doi":"10.1063/1.1897829","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Werner","first_name":"C.","full_name":"Werner, C."},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"full_name":"Petrosyan, S.","first_name":"S.","last_name":"Petrosyan"}],"year":"2005","status":"public","title":"Depletion characteristics of two-dimensional lateral p‐n-junctions","publication_status":"published","date_updated":"2022-01-06T07:03:58Z"},{"publication":"Applied Physics Letters","citation":{"short":"T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005).","ama":"Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.2001740\">10.1063/1.2001740</a>","chicago":"Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.2001740\">https://doi.org/10.1063/1.2001740</a>.","bibtex":"@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling using a driven electron ratchet in a two-dimensional electron system}, DOI={<a href=\"https://doi.org/10.1063/1.2001740\">10.1063/1.2001740</a>}, number={042104}, journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }","mla":"Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” <i>Applied Physics Letters</i>, 042104, 2005, doi:<a href=\"https://doi.org/10.1063/1.2001740\">10.1063/1.2001740</a>.","apa":"Müller, T., Würtz, A., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2005). Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2001740\">https://doi.org/10.1063/1.2001740</a>","ieee":"T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling using a driven electron ratchet in a two-dimensional electron system,” <i>Applied Physics Letters</i>, 2005."},"date_created":"2019-03-27T10:19:20Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"title":"Wave-form sampling using a driven electron ratchet in a two-dimensional electron system","year":"2005","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Müller","first_name":"T.","full_name":"Müller, T."},{"last_name":"Würtz","first_name":"A.","full_name":"Würtz, A."},{"full_name":"Lorke, A.","last_name":"Lorke","first_name":"A."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."}],"publication_status":"published","date_updated":"2022-01-06T07:03:58Z","article_number":"042104","_id":"8683","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1063/1.2001740"},{"publication":"Applied Physics Letters","citation":{"mla":"Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” <i>Applied Physics Letters</i>, 032502, 2005, doi:<a href=\"https://doi.org/10.1063/1.1996843\">10.1063/1.1996843</a>.","ama":"Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from ferromagnetic contacts in remanence. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.1996843\">10.1063/1.1996843</a>","bibtex":"@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005, title={Electron spin injection into GaAs from ferromagnetic contacts in remanence}, DOI={<a href=\"https://doi.org/10.1063/1.1996843\">10.1063/1.1996843</a>}, number={032502}, journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Westerholt, K.}, year={2005} }","apa":"Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic contacts in remanence. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.1996843\">https://doi.org/10.1063/1.1996843</a>","ieee":"N. C. Gerhardt <i>et al.</i>, “Electron spin injection into GaAs from ferromagnetic contacts in remanence,” <i>Applied Physics Letters</i>, 2005.","short":"N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005).","chicago":"Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.1996843\">https://doi.org/10.1063/1.1996843</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T10:21:16Z","publication_status":"published","date_updated":"2022-01-06T07:03:58Z","title":"Electron spin injection into GaAs from ferromagnetic contacts in remanence","status":"public","year":"2005","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Gerhardt, N. C.","last_name":"Gerhardt","first_name":"N. C."},{"first_name":"S.","last_name":"Hövel","full_name":"Hövel, S."},{"last_name":"Brenner","first_name":"C.","full_name":"Brenner, C."},{"full_name":"Hofmann, M. R.","last_name":"Hofmann","first_name":"M. R."},{"full_name":"Lo, F.-Y.","first_name":"F.-Y.","last_name":"Lo"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"},{"first_name":"E.","last_name":"Schuster","full_name":"Schuster, E."},{"full_name":"Keune, W.","last_name":"Keune","first_name":"W."},{"first_name":"K.","last_name":"Westerholt","full_name":"Westerholt, K."}],"user_id":"42514","doi":"10.1063/1.1996843","article_number":"032502","language":[{"iso":"eng"}],"_id":"8685"},{"citation":{"apa":"Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., &#38; Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>","ieee":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” <i>Applied Physics Letters</i>, 2005.","short":"S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005).","chicago":"Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.2112192\">https://doi.org/10.1063/1.2112192</a>.","mla":"Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” <i>Applied Physics Letters</i>, 163117, 2005, doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>.","ama":"Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>","bibtex":"@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, DOI={<a href=\"https://doi.org/10.1063/1.2112192\">10.1063/1.2112192</a>}, number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }"},"publication":"Applied Physics Letters","date_created":"2019-03-27T10:39:18Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","author":[{"last_name":"Lüttjohann","first_name":"Stephan","full_name":"Lüttjohann, Stephan"},{"full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik"},{"first_name":"Axel","last_name":"Lorke","full_name":"Lorke, Axel"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","first_name":"Andreas D.","full_name":"Wieck, Andreas D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2005","title":"Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra","status":"public","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","_id":"8690","language":[{"iso":"eng"}],"article_number":"163117","doi":"10.1063/1.2112192","user_id":"42514"},{"citation":{"mla":"Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 232108, 2005, doi:<a href=\"https://doi.org/10.1063/1.2139994\">10.1063/1.2139994</a>.","bibtex":"@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1063/1.2139994\">10.1063/1.2139994</a>}, number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }","ama":"Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. <i>Applied Physics Letters</i>. 2005. doi:<a href=\"https://doi.org/10.1063/1.2139994\">10.1063/1.2139994</a>","ieee":"B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole transistor in p-type GaAs∕AlGaAs heterostructures,” <i>Applied Physics Letters</i>, 2005.","apa":"Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., &#38; Wieck, A. D. (2005). Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. <i>Applied Physics Letters</i>. <a href=\"https://doi.org/10.1063/1.2139994\">https://doi.org/10.1063/1.2139994</a>","chicago":"Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D. Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 2005. <a href=\"https://doi.org/10.1063/1.2139994\">https://doi.org/10.1063/1.2139994</a>.","short":"B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2005)."},"publication":"Applied Physics Letters","date_created":"2019-03-27T11:12:28Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Grbić, Boris","first_name":"Boris","last_name":"Grbić"},{"full_name":"Leturcq, Renaud","last_name":"Leturcq","first_name":"Renaud"},{"full_name":"Ensslin, Klaus","first_name":"Klaus","last_name":"Ensslin"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, Andreas D.","first_name":"Andreas D.","last_name":"Wieck"}],"year":"2005","status":"public","title":"Single-hole transistor in p-type GaAs∕AlGaAs heterostructures","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","_id":"8691","language":[{"iso":"eng"}],"article_number":"232108","doi":"10.1063/1.2139994","user_id":"42514"},{"doi":"10.1063/1.1899771","language":[{"iso":"eng"}],"article_number":"152102","intvolume":"        86","date_updated":"2024-04-23T12:15:06Z","publication_status":"published","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Höink, V.","first_name":"V.","last_name":"Höink"},{"id":"26883","first_name":"Marc","orcid":"0000-0001-6217-336X","last_name":"Sacher","full_name":"Sacher, Marc"},{"full_name":"Schmalhorst, J.","first_name":"J.","last_name":"Schmalhorst"},{"full_name":"Reiss, G.","last_name":"Reiss","first_name":"G."},{"first_name":"D.","last_name":"Engel","full_name":"Engel, D."},{"last_name":"Junk","first_name":"D.","full_name":"Junk, D."},{"full_name":"Ehresmann, A.","first_name":"A.","last_name":"Ehresmann"}],"year":"2005","title":"Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias","department":[{"_id":"15"}],"type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"date_created":"2022-01-31T10:21:57Z","extern":"1","issue":"15","publication":"Applied Physics Letters","volume":86,"user_id":"26883","_id":"29691","publisher":"AIP Publishing","status":"public","citation":{"short":"V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann, Applied Physics Letters 86 (2005).","chicago":"Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified Exchange Bias.” <i>Applied Physics Letters</i> 86, no. 15 (2005). <a href=\"https://doi.org/10.1063/1.1899771\">https://doi.org/10.1063/1.1899771</a>.","ieee":"V. Höink <i>et al.</i>, “Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias,” <i>Applied Physics Letters</i>, vol. 86, no. 15, Art. no. 152102, 2005, doi: <a href=\"https://doi.org/10.1063/1.1899771\">10.1063/1.1899771</a>.","apa":"Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., &#38; Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. <i>Applied Physics Letters</i>, <i>86</i>(15), Article 152102. <a href=\"https://doi.org/10.1063/1.1899771\">https://doi.org/10.1063/1.1899771</a>","bibtex":"@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1899771\">10.1063/1.1899771</a>}, number={15152102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk, D. and Ehresmann, A.}, year={2005} }","ama":"Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. <i>Applied Physics Letters</i>. 2005;86(15). doi:<a href=\"https://doi.org/10.1063/1.1899771\">10.1063/1.1899771</a>","mla":"Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified Exchange Bias.” <i>Applied Physics Letters</i>, vol. 86, no. 15, 152102, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1899771\">10.1063/1.1899771</a>."}},{"volume":87,"user_id":"254","_id":"39764","publisher":"AIP Publishing","status":"public","citation":{"apa":"Matthias, H., Röder, T., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., &#38; Picken, S. J. (2005). Spatially periodic liquid crystal director field appearing in a photonic crystal template. <i>Applied Physics Letters</i>, <i>87</i>(24), Article 241105. <a href=\"https://doi.org/10.1063/1.2142100\">https://doi.org/10.1063/1.2142100</a>","ieee":"H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and S. J. Picken, “Spatially periodic liquid crystal director field appearing in a photonic crystal template,” <i>Applied Physics Letters</i>, vol. 87, no. 24, Art. no. 241105, 2005, doi: <a href=\"https://doi.org/10.1063/1.2142100\">10.1063/1.2142100</a>.","chicago":"Matthias, Heinrich, Thorsten Röder, Ralf B. Wehrspohn, Heinz-Siegfried Kitzerow, Sven Matthias, and Stephen J. Picken. “Spatially Periodic Liquid Crystal Director Field Appearing in a Photonic Crystal Template.” <i>Applied Physics Letters</i> 87, no. 24 (2005). <a href=\"https://doi.org/10.1063/1.2142100\">https://doi.org/10.1063/1.2142100</a>.","short":"H. Matthias, T. Röder, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, S.J. Picken, Applied Physics Letters 87 (2005).","mla":"Matthias, Heinrich, et al. “Spatially Periodic Liquid Crystal Director Field Appearing in a Photonic Crystal Template.” <i>Applied Physics Letters</i>, vol. 87, no. 24, 241105, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2142100\">10.1063/1.2142100</a>.","ama":"Matthias H, Röder T, Wehrspohn RB, Kitzerow H-S, Matthias S, Picken SJ. Spatially periodic liquid crystal director field appearing in a photonic crystal template. <i>Applied Physics Letters</i>. 2005;87(24). doi:<a href=\"https://doi.org/10.1063/1.2142100\">10.1063/1.2142100</a>","bibtex":"@article{Matthias_Röder_Wehrspohn_Kitzerow_Matthias_Picken_2005, title={Spatially periodic liquid crystal director field appearing in a photonic crystal template}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2142100\">10.1063/1.2142100</a>}, number={24241105}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow, Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}, year={2005} }"},"doi":"10.1063/1.2142100","language":[{"iso":"eng"}],"article_number":"241105","intvolume":"        87","publication_status":"published","date_updated":"2023-01-24T19:11:03Z","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Matthias, Heinrich","first_name":"Heinrich","last_name":"Matthias"},{"first_name":"Thorsten","last_name":"Röder","full_name":"Röder, Thorsten"},{"full_name":"Wehrspohn, Ralf B.","last_name":"Wehrspohn","first_name":"Ralf B."},{"id":"254","first_name":"Heinz-Siegfried","last_name":"Kitzerow","full_name":"Kitzerow, Heinz-Siegfried"},{"last_name":"Matthias","first_name":"Sven","full_name":"Matthias, Sven"},{"last_name":"Picken","first_name":"Stephen J.","full_name":"Picken, Stephen J."}],"year":"2005","title":"Spatially periodic liquid crystal director field appearing in a photonic crystal template","department":[{"_id":"313"},{"_id":"638"}],"keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","date_created":"2023-01-24T19:10:38Z","publication":"Applied Physics Letters","issue":"24"},{"citation":{"short":"G. Mertens, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, U. Gösele, Applied Physics Letters 87 (2005).","chicago":"Mertens, G., R. B. Wehrspohn, Heinz-Siegfried Kitzerow, S. Matthias, C. Jamois, and U. Gösele. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” <i>Applied Physics Letters</i> 87, no. 24 (2005). <a href=\"https://doi.org/10.1063/1.2139846\">https://doi.org/10.1063/1.2139846</a>.","apa":"Mertens, G., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., Jamois, C., &#38; Gösele, U. (2005). Tunable defect mode in a three-dimensional photonic crystal. <i>Applied Physics Letters</i>, <i>87</i>(24), Article 241108. <a href=\"https://doi.org/10.1063/1.2139846\">https://doi.org/10.1063/1.2139846</a>","ieee":"G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,” <i>Applied Physics Letters</i>, vol. 87, no. 24, Art. no. 241108, 2005, doi: <a href=\"https://doi.org/10.1063/1.2139846\">10.1063/1.2139846</a>.","ama":"Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable defect mode in a three-dimensional photonic crystal. <i>Applied Physics Letters</i>. 2005;87(24). doi:<a href=\"https://doi.org/10.1063/1.2139846\">10.1063/1.2139846</a>","bibtex":"@article{Mertens_Wehrspohn_Kitzerow_Matthias_Jamois_Gösele_2005, title={Tunable defect mode in a three-dimensional photonic crystal}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2139846\">10.1063/1.2139846</a>}, number={24241108}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias, S. and Jamois, C. and Gösele, U.}, year={2005} }","mla":"Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” <i>Applied Physics Letters</i>, vol. 87, no. 24, 241108, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2139846\">10.1063/1.2139846</a>."},"status":"public","_id":"39767","publisher":"AIP Publishing","user_id":"254","volume":87,"issue":"24","publication":"Applied Physics Letters","date_created":"2023-01-24T19:12:37Z","type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"department":[{"_id":"313"},{"_id":"638"}],"year":"2005","title":"Tunable defect mode in a three-dimensional photonic crystal","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Mertens, G.","last_name":"Mertens","first_name":"G."},{"last_name":"Wehrspohn","first_name":"R. B.","full_name":"Wehrspohn, R. B."},{"full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried","id":"254"},{"last_name":"Matthias","first_name":"S.","full_name":"Matthias, S."},{"full_name":"Jamois, C.","last_name":"Jamois","first_name":"C."},{"full_name":"Gösele, U.","last_name":"Gösele","first_name":"U."}],"date_updated":"2023-01-24T19:13:14Z","publication_status":"published","intvolume":"        87","article_number":"241108","language":[{"iso":"eng"}],"doi":"10.1063/1.2139846"},{"status":"public","_id":"39768","publisher":"AIP Publishing","user_id":"254","volume":86,"citation":{"bibtex":"@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>}, number={3031104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }","ama":"Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. <i>Applied Physics Letters</i>. 2005;86(3). doi:<a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>","mla":"Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” <i>Applied Physics Letters</i>, vol. 86, no. 3, 031104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>.","short":"L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005).","chicago":"Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” <i>Applied Physics Letters</i> 86, no. 3 (2005). <a href=\"https://doi.org/10.1063/1.1852082\">https://doi.org/10.1063/1.1852082</a>.","ieee":"L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” <i>Applied Physics Letters</i>, vol. 86, no. 3, Art. no. 031104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>.","apa":"Paelke, L., Kitzerow, H.-S., &#38; Strohriegl, P. (2005). Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. <i>Applied Physics Letters</i>, <i>86</i>(3), Article 031104. <a href=\"https://doi.org/10.1063/1.1852082\">https://doi.org/10.1063/1.1852082</a>"},"title":"Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane","year":"2005","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Paelke, Lutz","last_name":"Paelke","first_name":"Lutz"},{"last_name":"Kitzerow","first_name":"Heinz-Siegfried","full_name":"Kitzerow, Heinz-Siegfried","id":"254"},{"full_name":"Strohriegl, Peter","first_name":"Peter","last_name":"Strohriegl"}],"date_updated":"2023-01-24T19:13:50Z","publication_status":"published","intvolume":"        86","article_number":"031104","language":[{"iso":"eng"}],"doi":"10.1063/1.1852082","publication":"Applied Physics Letters","issue":"3","date_created":"2023-01-24T19:13:33Z","keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","department":[{"_id":"313"},{"_id":"638"}]},{"status":"public","_id":"23507","volume":87,"user_id":"49063","citation":{"chicago":"Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i> 87, no. 26 (2005). <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>.","short":"C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005).","ieee":"C. Schlichenmaier <i>et al.</i>, “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” <i>Applied Physics Letters</i>, vol. 87, no. 26, Art. no. 261109, 2005, doi: <a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","apa":"Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>, <i>87</i>(26), Article 261109. <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>","bibtex":"@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }","ama":"Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>. 2005;87(26). doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>","mla":"Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i>, vol. 87, no. 26, 261109, 2005, doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>."},"author":[{"last_name":"Schlichenmaier","first_name":"C.","full_name":"Schlichenmaier, C."},{"full_name":"Thränhardt, A.","first_name":"A.","last_name":"Thränhardt"},{"full_name":"Meier, Torsten","last_name":"Meier","first_name":"Torsten","orcid":"0000-0001-8864-2072","id":"344"},{"first_name":"S. W.","last_name":"Koch","full_name":"Koch, S. W."},{"full_name":"Chow, W. W.","last_name":"Chow","first_name":"W. W."},{"full_name":"Hader, J.","last_name":"Hader","first_name":"J."},{"first_name":"J. V.","last_name":"Moloney","full_name":"Moloney, J. V."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range","year":"2005","intvolume":"        87","date_updated":"2023-04-24T06:00:23Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"261109","doi":"10.1063/1.2149371","issue":"26","publication":"Applied Physics Letters","abstract":[{"text":"A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n⁠.","lang":"eng"}],"extern":"1","date_created":"2021-08-24T09:29:41Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"type":"journal_article"},{"status":"public","_id":"39574","publisher":"AIP Publishing","user_id":"20179","volume":86,"citation":{"ieee":"M. Scharnberg <i>et al.</i>, “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” <i>Applied Physics Letters</i>, vol. 86, no. 2, Art. no. 024104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., &#38; Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>, <i>86</i>(2), Article 024104. <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>","short":"M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).","chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i> 86, no. 2 (2005). <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>.","mla":"Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i>, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","bibtex":"@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }","ama":"Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>. 2005;86(2). doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>"},"title":"Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics","year":"2005","author":[{"last_name":"Scharnberg","first_name":"M.","full_name":"Scharnberg, M."},{"first_name":"J.","last_name":"Hu","full_name":"Hu, J."},{"last_name":"Kanzow","first_name":"J.","full_name":"Kanzow, J."},{"full_name":"Rätzke, K.","last_name":"Rätzke","first_name":"K."},{"full_name":"Adelung, R.","last_name":"Adelung","first_name":"R."},{"full_name":"Faupel, F.","last_name":"Faupel","first_name":"F."},{"full_name":"Pannemann, C.","last_name":"Pannemann","first_name":"C."},{"first_name":"Ulrich","last_name":"Hilleringmann","full_name":"Hilleringmann, Ulrich","id":"20179"},{"first_name":"S.","last_name":"Meyer","full_name":"Meyer, S."},{"last_name":"Pflaum","first_name":"J.","full_name":"Pflaum, J."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2023-03-22T10:34:05Z","intvolume":"        86","article_number":"024104","language":[{"iso":"eng"}],"doi":"10.1063/1.1849845","publication":"Applied Physics Letters","issue":"2","date_created":"2023-01-24T12:21:59Z","keyword":["Physics and Astronomy (miscellaneous)"],"type":"journal_article","department":[{"_id":"59"}]},{"volume":85,"user_id":"20798","_id":"7678","publisher":"AIP Publishing","page":"5179-5181","status":"public","citation":{"ama":"Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. <i>Applied Physics Letters</i>. 2004;85(22):5179-5181. doi:<a href=\"https://doi.org/10.1063/1.1829167\">10.1063/1.1829167</a>","bibtex":"@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}, volume={85}, DOI={<a href=\"https://doi.org/10.1063/1.1829167\">10.1063/1.1829167</a>}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }","mla":"Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” <i>Applied Physics Letters</i>, vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:<a href=\"https://doi.org/10.1063/1.1829167\">10.1063/1.1829167</a>.","chicago":"Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S. P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” <i>Applied Physics Letters</i> 85, no. 22 (2004): 5179–81. <a href=\"https://doi.org/10.1063/1.1829167\">https://doi.org/10.1063/1.1829167</a>.","short":"E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181.","apa":"Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars, S. P., &#38; Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. <i>Applied Physics Letters</i>, <i>85</i>(22), 5179–5181. <a href=\"https://doi.org/10.1063/1.1829167\">https://doi.org/10.1063/1.1829167</a>","ieee":"E. D. Haberer <i>et al.</i>, “Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching,” <i>Applied Physics Letters</i>, vol. 85, no. 22, pp. 5179–5181, 2004."},"doi":"10.1063/1.1829167","language":[{"iso":"eng"}],"intvolume":"        85","date_updated":"2022-01-06T07:03:43Z","publication_status":"published","author":[{"last_name":"Haberer","first_name":"E. D.","full_name":"Haberer, E. D."},{"full_name":"Sharma, R.","last_name":"Sharma","first_name":"R."},{"full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","id":"20798"},{"first_name":"A. R.","last_name":"Stonas","full_name":"Stonas, A. R."},{"last_name":"Nakamura","first_name":"S.","full_name":"Nakamura, S."},{"full_name":"DenBaars, S. P.","first_name":"S. P.","last_name":"DenBaars"},{"first_name":"E. L.","last_name":"Hu","full_name":"Hu, E. L."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"title":"Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching","year":"2004","department":[{"_id":"15"}],"type":"journal_article","date_created":"2019-02-13T14:47:45Z","extern":"1","publication":"Applied Physics Letters","issue":"22"},{"date_updated":"2022-01-06T07:03:59Z","publication_status":"published","title":"The linearly graded two-dimensional p–n junction","year":"2004","status":"public","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"first_name":"S.","last_name":"Petrosyan","full_name":"Petrosyan, S."},{"last_name":"Yesayan","first_name":"A.","full_name":"Yesayan, A."},{"id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"doi":"10.1063/1.1736316","user_id":"42514","page":"3313-3315","_id":"8696","language":[{"iso":"eng"}],"publication":"Applied Physics Letters","citation":{"apa":"Petrosyan, S., Yesayan, A., Reuter, D., &#38; Wieck, A. D. (2004). The linearly graded two-dimensional p–n junction. <i>Applied Physics Letters</i>, 3313–3315. <a href=\"https://doi.org/10.1063/1.1736316\">https://doi.org/10.1063/1.1736316</a>","ieee":"S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded two-dimensional p–n junction,” <i>Applied Physics Letters</i>, pp. 3313–3315, 2004.","short":"S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 3313–3315.","chicago":"Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly Graded Two-Dimensional p–n Junction.” <i>Applied Physics Letters</i>, 2004, 3313–15. <a href=\"https://doi.org/10.1063/1.1736316\">https://doi.org/10.1063/1.1736316</a>.","mla":"Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” <i>Applied Physics Letters</i>, 2004, pp. 3313–15, doi:<a href=\"https://doi.org/10.1063/1.1736316\">10.1063/1.1736316</a>.","ama":"Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional p–n junction. <i>Applied Physics Letters</i>. 2004:3313-3315. doi:<a href=\"https://doi.org/10.1063/1.1736316\">10.1063/1.1736316</a>","bibtex":"@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded two-dimensional p–n junction}, DOI={<a href=\"https://doi.org/10.1063/1.1736316\">10.1063/1.1736316</a>}, journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T11:43:00Z"},{"year":"2004","status":"public","title":"Magnetotransport in C-doped AlGaAs heterostructures","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Grbić, B.","last_name":"Grbić","first_name":"B."},{"full_name":"Ellenberger, C.","last_name":"Ellenberger","first_name":"C."},{"full_name":"Ihn, T.","first_name":"T.","last_name":"Ihn"},{"full_name":"Ensslin, K.","last_name":"Ensslin","first_name":"K."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","page":"2277-2279","_id":"8711","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1063/1.1781750","publication":"Applied Physics Letters","citation":{"ieee":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” <i>Applied Physics Letters</i>, pp. 2277–2279, 2004.","apa":"Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., &#38; Wieck, A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. <i>Applied Physics Letters</i>, 2277–2279. <a href=\"https://doi.org/10.1063/1.1781750\">https://doi.org/10.1063/1.1781750</a>","chicago":"Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Magnetotransport in C-Doped AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 2004, 2277–79. <a href=\"https://doi.org/10.1063/1.1781750\">https://doi.org/10.1063/1.1781750</a>.","short":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 2277–2279.","mla":"Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 2004, pp. 2277–79, doi:<a href=\"https://doi.org/10.1063/1.1781750\">10.1063/1.1781750</a>.","bibtex":"@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport in C-doped AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1063/1.1781750\">10.1063/1.1781750</a>}, journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279} }","ama":"Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport in C-doped AlGaAs heterostructures. <i>Applied Physics Letters</i>. 2004:2277-2279. doi:<a href=\"https://doi.org/10.1063/1.1781750\">10.1063/1.1781750</a>"},"date_created":"2019-03-27T12:21:18Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"publication_status":"published","date_updated":"2023-04-24T06:23:26Z","intvolume":"        85","title":"Nonequilibrium gain in optically pumped GaInNAs laser structures","year":"2004","author":[{"full_name":"Thränhardt, A.","first_name":"A.","last_name":"Thränhardt"},{"full_name":"Becker, S.","last_name":"Becker","first_name":"S."},{"first_name":"C.","last_name":"Schlichenmaier","full_name":"Schlichenmaier, C."},{"first_name":"I.","last_name":"Kuznetsova","full_name":"Kuznetsova, I."},{"orcid":"0000-0001-8864-2072","first_name":"Torsten","last_name":"Meier","full_name":"Meier, Torsten","id":"344"},{"first_name":"S. W.","last_name":"Koch","full_name":"Koch, S. W."},{"full_name":"Hader, J.","last_name":"Hader","first_name":"J."},{"last_name":"Moloney","first_name":"J. V.","full_name":"Moloney, J. V."},{"full_name":"Chow, W. W.","last_name":"Chow","first_name":"W. W."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"doi":"10.1063/1.1831570","language":[{"iso":"eng"}],"extern":"1","abstract":[{"lang":"eng","text":"A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters."}],"issue":"23","publication":"Applied Physics Letters","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"date_created":"2021-08-24T09:46:22Z","status":"public","user_id":"49063","volume":85,"page":"5526-5528","_id":"23514","citation":{"chicago":"Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” <i>Applied Physics Letters</i> 85, no. 23 (2004): 5526–28. <a href=\"https://doi.org/10.1063/1.1831570\">https://doi.org/10.1063/1.1831570</a>.","short":"A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528.","apa":"Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T., Koch, S. W., Hader, J., Moloney, J. V., &#38; Chow, W. W. (2004). Nonequilibrium gain in optically pumped GaInNAs laser structures. <i>Applied Physics Letters</i>, <i>85</i>(23), 5526–5528. <a href=\"https://doi.org/10.1063/1.1831570\">https://doi.org/10.1063/1.1831570</a>","ieee":"A. Thränhardt <i>et al.</i>, “Nonequilibrium gain in optically pumped GaInNAs laser structures,” <i>Applied Physics Letters</i>, vol. 85, no. 23, pp. 5526–5528, 2004, doi: <a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>.","ama":"Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically pumped GaInNAs laser structures. <i>Applied Physics Letters</i>. 2004;85(23):5526-5528. doi:<a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>","bibtex":"@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004, title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85}, DOI={<a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>}, number={23}, journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier, C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney, J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }","mla":"Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” <i>Applied Physics Letters</i>, vol. 85, no. 23, 2004, pp. 5526–28, doi:<a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>."}}]