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B. and Kitzerow, Heinz-Siegfried and Matthias, S. and Jamois, C. and Gösele, U.}, year={2005} }","ama":"Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable defect mode in a three-dimensional photonic crystal. <i>Applied Physics Letters</i>. 2005;87(24). doi:<a href=\"https://doi.org/10.1063/1.2139846\">10.1063/1.2139846</a>","mla":"Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” <i>Applied Physics Letters</i>, vol. 87, no. 24, 241108, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.2139846\">10.1063/1.2139846</a>."},"publisher":"AIP Publishing","_id":"39767","volume":87,"user_id":"254","status":"public"},{"citation":{"ieee":"L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” <i>Applied Physics Letters</i>, vol. 86, no. 3, Art. no. 031104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>.","apa":"Paelke, L., Kitzerow, H.-S., &#38; Strohriegl, P. (2005). Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. <i>Applied Physics Letters</i>, <i>86</i>(3), Article 031104. <a href=\"https://doi.org/10.1063/1.1852082\">https://doi.org/10.1063/1.1852082</a>","chicago":"Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” <i>Applied Physics Letters</i> 86, no. 3 (2005). <a href=\"https://doi.org/10.1063/1.1852082\">https://doi.org/10.1063/1.1852082</a>.","short":"L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005).","mla":"Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” <i>Applied Physics Letters</i>, vol. 86, no. 3, 031104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>.","bibtex":"@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1852082\">10.1063/1.1852082</a>}, number={3031104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }","ama":"Paelke L, Kitzerow H-S, Strohriegl P. 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Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n⁠.","lang":"eng"}],"extern":"1","_id":"23507","user_id":"49063","volume":87,"status":"public","citation":{"bibtex":"@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }","ama":"Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>. 2005;87(26). doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>","mla":"Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i>, vol. 87, no. 26, 261109, 2005, doi:<a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","short":"C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005).","chicago":"Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” <i>Applied Physics Letters</i> 87, no. 26 (2005). <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>.","ieee":"C. Schlichenmaier <i>et al.</i>, “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” <i>Applied Physics Letters</i>, vol. 87, no. 26, Art. no. 261109, 2005, doi: <a href=\"https://doi.org/10.1063/1.2149371\">10.1063/1.2149371</a>.","apa":"Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., &#38; Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. <i>Applied Physics Letters</i>, <i>87</i>(26), Article 261109. <a href=\"https://doi.org/10.1063/1.2149371\">https://doi.org/10.1063/1.2149371</a>"}},{"publication":"Applied Physics Letters","issue":"2","type":"journal_article","keyword":["Physics and Astronomy (miscellaneous)"],"department":[{"_id":"59"}],"date_created":"2023-01-24T12:21:59Z","publication_status":"published","date_updated":"2023-03-22T10:34:05Z","intvolume":"        86","title":"Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics","year":"2005","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"last_name":"Scharnberg","first_name":"M.","full_name":"Scharnberg, M."},{"full_name":"Hu, J.","first_name":"J.","last_name":"Hu"},{"full_name":"Kanzow, J.","first_name":"J.","last_name":"Kanzow"},{"full_name":"Rätzke, K.","last_name":"Rätzke","first_name":"K."},{"first_name":"R.","last_name":"Adelung","full_name":"Adelung, R."},{"first_name":"F.","last_name":"Faupel","full_name":"Faupel, F."},{"first_name":"C.","last_name":"Pannemann","full_name":"Pannemann, C."},{"full_name":"Hilleringmann, Ulrich","last_name":"Hilleringmann","first_name":"Ulrich","id":"20179"},{"full_name":"Meyer, S.","first_name":"S.","last_name":"Meyer"},{"first_name":"J.","last_name":"Pflaum","full_name":"Pflaum, J."}],"doi":"10.1063/1.1849845","article_number":"024104","language":[{"iso":"eng"}],"citation":{"apa":"Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., &#38; Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>, <i>86</i>(2), Article 024104. <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>","ieee":"M. Scharnberg <i>et al.</i>, “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” <i>Applied Physics Letters</i>, vol. 86, no. 2, Art. no. 024104, 2005, doi: <a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","short":"M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).","chicago":"Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i> 86, no. 2 (2005). <a href=\"https://doi.org/10.1063/1.1849845\">https://doi.org/10.1063/1.1849845</a>.","mla":"Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” <i>Applied Physics Letters</i>, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>.","ama":"Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. <i>Applied Physics Letters</i>. 2005;86(2). doi:<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>","bibtex":"@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.1849845\">10.1063/1.1849845</a>}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }"},"status":"public","user_id":"20179","volume":86,"publisher":"AIP Publishing","_id":"39574"},{"date_created":"2019-02-13T14:47:45Z","department":[{"_id":"15"}],"type":"journal_article","publication":"Applied Physics Letters","issue":"22","extern":"1","language":[{"iso":"eng"}],"doi":"10.1063/1.1829167","author":[{"first_name":"E. 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Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. <i>Applied Physics Letters</i>, <i>85</i>(22), 5179–5181. <a href=\"https://doi.org/10.1063/1.1829167\">https://doi.org/10.1063/1.1829167</a>","bibtex":"@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}, volume={85}, DOI={<a href=\"https://doi.org/10.1063/1.1829167\">10.1063/1.1829167</a>}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }","ama":"Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. <i>Applied Physics Letters</i>. 2004;85(22):5179-5181. doi:<a href=\"https://doi.org/10.1063/1.1829167\">10.1063/1.1829167</a>","mla":"Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” <i>Applied Physics Letters</i>, vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:<a href=\"https://doi.org/10.1063/1.1829167\">10.1063/1.1829167</a>."},"publisher":"AIP Publishing","_id":"7678","page":"5179-5181","volume":85,"user_id":"20798","status":"public"},{"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","year":"2004","status":"public","title":"The linearly graded two-dimensional p–n junction","publication_identifier":{"issn":["0003-6951","1077-3118"]},"author":[{"full_name":"Petrosyan, S.","last_name":"Petrosyan","first_name":"S."},{"last_name":"Yesayan","first_name":"A.","full_name":"Yesayan, A."},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"full_name":"Wieck, A. D.","first_name":"A. D.","last_name":"Wieck"}],"user_id":"42514","doi":"10.1063/1.1736316","page":"3313-3315","language":[{"iso":"eng"}],"_id":"8696","publication":"Applied Physics Letters","citation":{"apa":"Petrosyan, S., Yesayan, A., Reuter, D., &#38; Wieck, A. D. (2004). The linearly graded two-dimensional p–n junction. <i>Applied Physics Letters</i>, 3313–3315. <a href=\"https://doi.org/10.1063/1.1736316\">https://doi.org/10.1063/1.1736316</a>","ieee":"S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded two-dimensional p–n junction,” <i>Applied Physics Letters</i>, pp. 3313–3315, 2004.","chicago":"Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly Graded Two-Dimensional p–n Junction.” <i>Applied Physics Letters</i>, 2004, 3313–15. <a href=\"https://doi.org/10.1063/1.1736316\">https://doi.org/10.1063/1.1736316</a>.","short":"S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 3313–3315.","mla":"Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” <i>Applied Physics Letters</i>, 2004, pp. 3313–15, doi:<a href=\"https://doi.org/10.1063/1.1736316\">10.1063/1.1736316</a>.","ama":"Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional p–n junction. <i>Applied Physics Letters</i>. 2004:3313-3315. doi:<a href=\"https://doi.org/10.1063/1.1736316\">10.1063/1.1736316</a>","bibtex":"@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded two-dimensional p–n junction}, DOI={<a href=\"https://doi.org/10.1063/1.1736316\">10.1063/1.1736316</a>}, journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T11:43:00Z"},{"language":[{"iso":"eng"}],"_id":"8711","page":"2277-2279","doi":"10.1063/1.1781750","user_id":"42514","author":[{"full_name":"Grbić, B.","first_name":"B.","last_name":"Grbić"},{"full_name":"Ellenberger, C.","last_name":"Ellenberger","first_name":"C."},{"full_name":"Ihn, T.","last_name":"Ihn","first_name":"T."},{"full_name":"Ensslin, K.","first_name":"K.","last_name":"Ensslin"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2004","status":"public","title":"Magnetotransport in C-doped AlGaAs heterostructures","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","date_created":"2019-03-27T12:21:18Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"chicago":"Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Magnetotransport in C-Doped AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 2004, 2277–79. <a href=\"https://doi.org/10.1063/1.1781750\">https://doi.org/10.1063/1.1781750</a>.","short":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 2277–2279.","ieee":"B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” <i>Applied Physics Letters</i>, pp. 2277–2279, 2004.","apa":"Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., &#38; Wieck, A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. <i>Applied Physics Letters</i>, 2277–2279. <a href=\"https://doi.org/10.1063/1.1781750\">https://doi.org/10.1063/1.1781750</a>","bibtex":"@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport in C-doped AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1063/1.1781750\">10.1063/1.1781750</a>}, journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279} }","ama":"Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport in C-doped AlGaAs heterostructures. <i>Applied Physics Letters</i>. 2004:2277-2279. doi:<a href=\"https://doi.org/10.1063/1.1781750\">10.1063/1.1781750</a>","mla":"Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” <i>Applied Physics Letters</i>, 2004, pp. 2277–79, doi:<a href=\"https://doi.org/10.1063/1.1781750\">10.1063/1.1781750</a>."},"publication":"Applied Physics Letters"},{"publication":"Applied Physics Letters","issue":"23","extern":"1","abstract":[{"lang":"eng","text":"A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters."}],"date_created":"2021-08-24T09:46:22Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"}],"title":"Nonequilibrium gain in optically pumped GaInNAs laser structures","year":"2004","author":[{"full_name":"Thränhardt, A.","last_name":"Thränhardt","first_name":"A."},{"last_name":"Becker","first_name":"S.","full_name":"Becker, S."},{"first_name":"C.","last_name":"Schlichenmaier","full_name":"Schlichenmaier, C."},{"full_name":"Kuznetsova, I.","first_name":"I.","last_name":"Kuznetsova"},{"full_name":"Meier, Torsten","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten","id":"344"},{"full_name":"Koch, S. W.","first_name":"S. W.","last_name":"Koch"},{"full_name":"Hader, J.","first_name":"J.","last_name":"Hader"},{"full_name":"Moloney, J. V.","last_name":"Moloney","first_name":"J. V."},{"first_name":"W. W.","last_name":"Chow","full_name":"Chow, W. W."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"publication_status":"published","date_updated":"2023-04-24T06:23:26Z","intvolume":"        85","language":[{"iso":"eng"}],"doi":"10.1063/1.1831570","citation":{"mla":"Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” <i>Applied Physics Letters</i>, vol. 85, no. 23, 2004, pp. 5526–28, doi:<a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>.","ama":"Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically pumped GaInNAs laser structures. <i>Applied Physics Letters</i>. 2004;85(23):5526-5528. doi:<a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>","bibtex":"@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004, title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85}, DOI={<a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>}, number={23}, journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier, C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney, J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }","apa":"Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T., Koch, S. W., Hader, J., Moloney, J. V., &#38; Chow, W. W. (2004). Nonequilibrium gain in optically pumped GaInNAs laser structures. <i>Applied Physics Letters</i>, <i>85</i>(23), 5526–5528. <a href=\"https://doi.org/10.1063/1.1831570\">https://doi.org/10.1063/1.1831570</a>","ieee":"A. Thränhardt <i>et al.</i>, “Nonequilibrium gain in optically pumped GaInNAs laser structures,” <i>Applied Physics Letters</i>, vol. 85, no. 23, pp. 5526–5528, 2004, doi: <a href=\"https://doi.org/10.1063/1.1831570\">10.1063/1.1831570</a>.","chicago":"Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” <i>Applied Physics Letters</i> 85, no. 23 (2004): 5526–28. <a href=\"https://doi.org/10.1063/1.1831570\">https://doi.org/10.1063/1.1831570</a>.","short":"A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528."},"status":"public","page":"5526-5528","_id":"23514","user_id":"49063","volume":85},{"user_id":"20798","volume":82,"page":"481-483","_id":"7683","publisher":"AIP Publishing","status":"public","citation":{"short":"D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics Letters 82 (2003) 481–483.","chicago":"Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” <i>Applied Physics Letters</i> 82, no. 3 (2003): 481–83. <a href=\"https://doi.org/10.1063/1.1539925\">https://doi.org/10.1063/1.1539925</a>.","apa":"Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., &#38; Wieck, A. D. (2003). Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. <i>Applied Physics Letters</i>, <i>82</i>(3), 481–483. <a href=\"https://doi.org/10.1063/1.1539925\">https://doi.org/10.1063/1.1539925</a>","ieee":"D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs,” <i>Applied Physics Letters</i>, vol. 82, no. 3, pp. 481–483, 2003.","ama":"Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. <i>Applied Physics Letters</i>. 2003;82(3):481-483. doi:<a href=\"https://doi.org/10.1063/1.1539925\">10.1063/1.1539925</a>","bibtex":"@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs}, volume={82}, DOI={<a href=\"https://doi.org/10.1063/1.1539925\">10.1063/1.1539925</a>}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter, D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.}, year={2003}, pages={481–483} }","mla":"Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” <i>Applied Physics Letters</i>, vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:<a href=\"https://doi.org/10.1063/1.1539925\">10.1063/1.1539925</a>."},"doi":"10.1063/1.1539925","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:43Z","publication_status":"published","intvolume":"        82","year":"2003","title":"Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs","author":[{"full_name":"Reuter, D.","last_name":"Reuter","first_name":"D."},{"full_name":"Riedesel, C.","first_name":"C.","last_name":"Riedesel"},{"full_name":"Schafmeister, P.","last_name":"Schafmeister","first_name":"P."},{"id":"20798","full_name":"Meier, Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","first_name":"Cedrik","last_name":"Meier"},{"full_name":"Wieck, A. 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Roldan, et al. “Magnetism and Interface Properties of Epitaxial Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.” <i>Applied Physics Letters</i>, 2003, pp. 1072–74, doi:<a href=\"https://doi.org/10.1063/1.1542934\">10.1063/1.1542934</a>.","bibtex":"@article{Cuenya_Doi_Keune_Hoch_Reuter_Wieck_Schmitte_Zabel_2003, title={Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures}, DOI={<a href=\"https://doi.org/10.1063/1.1542934\">10.1063/1.1542934</a>}, journal={Applied Physics Letters}, author={Cuenya, B. Roldan and Doi, M. and Keune, W. and Hoch, S. and Reuter, Dirk and Wieck, A. and Schmitte, T. and Zabel, H.}, year={2003}, pages={1072–1074} }","ama":"Cuenya BR, Doi M, Keune W, et al. Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. <i>Applied Physics Letters</i>. 2003:1072-1074. doi:<a href=\"https://doi.org/10.1063/1.1542934\">10.1063/1.1542934</a>"},"publication":"Applied Physics Letters","user_id":"42514","doi":"10.1063/1.1542934","language":[{"iso":"eng"}],"_id":"8723","page":"1072-1074","publication_status":"published","date_updated":"2022-01-06T07:03:59Z","author":[{"last_name":"Cuenya","first_name":"B. Roldan","full_name":"Cuenya, B. 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Self-induced transparency in InGaAs quantum-dot waveguides. <i>Applied Physics Letters</i>. 2003;83(18):3668-3670. doi:<a href=\"https://doi.org/10.1063/1.1624492\">10.1063/1.1624492</a>","bibtex":"@article{Schneider_Borri_Langbein_Woggon_Förstner_Knorr_Sellin_Ouyang_Bimberg_2003, title={Self-induced transparency in InGaAs quantum-dot waveguides}, volume={83}, DOI={<a href=\"https://doi.org/10.1063/1.1624492\">10.1063/1.1624492</a>}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schneider, S. and Borri, P. and Langbein, W. and Woggon, U. and Förstner, Jens and Knorr, A. and Sellin, R. L. and Ouyang, D. and Bimberg, D.}, year={2003}, pages={3668–3670} }","mla":"Schneider, S., et al. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” <i>Applied Physics Letters</i>, vol. 83, no. 18, AIP Publishing, 2003, pp. 3668–70, doi:<a href=\"https://doi.org/10.1063/1.1624492\">10.1063/1.1624492</a>.","short":"S. Schneider, P. Borri, W. Langbein, U. Woggon, J. Förstner, A. Knorr, R.L. Sellin, D. Ouyang, D. Bimberg, Applied Physics Letters 83 (2003) 3668–3670.","chicago":"Schneider, S., P. Borri, W. Langbein, U. Woggon, Jens Förstner, A. Knorr, R. L. Sellin, D. Ouyang, and D. Bimberg. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” <i>Applied Physics Letters</i> 83, no. 18 (2003): 3668–70. <a href=\"https://doi.org/10.1063/1.1624492\">https://doi.org/10.1063/1.1624492</a>.","apa":"Schneider, S., Borri, P., Langbein, W., Woggon, U., Förstner, J., Knorr, A., … Bimberg, D. (2003). Self-induced transparency in InGaAs quantum-dot waveguides. <i>Applied Physics Letters</i>, <i>83</i>(18), 3668–3670. <a href=\"https://doi.org/10.1063/1.1624492\">https://doi.org/10.1063/1.1624492</a>","ieee":"S. Schneider <i>et al.</i>, “Self-induced transparency in InGaAs quantum-dot waveguides,” <i>Applied Physics Letters</i>, vol. 83, no. 18, pp. 3668–3670, 2003."},"file_date_updated":"2018-09-05T06:50:15Z","volume":83,"ddc":["530"],"user_id":"158","urn":"42888","_id":"4288","publisher":"AIP Publishing","page":"3668-3670","has_accepted_license":"1","status":"public","type":"journal_article","keyword":["tet_topic_qd"],"date_created":"2018-08-30T07:41:02Z","file":[{"content_type":"application/pdf","file_id":"4289","file_size":55291,"access_level":"open_access","file_name":"2003 Schneider et al_Self-induced transparency in InGaAs quantum-dot waveguides.pdf","date_updated":"2018-09-05T06:50:15Z","relation":"main_file","date_created":"2018-08-30T07:41:50Z","creator":"hclaudia"}],"abstract":[{"text":"We report the experimental observation and the theoretical modeling of self-induced-transparency\r\nsignatures such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond pulse\r\npropagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance with the excitonic\r\nground-state transition at 10 K. The measurements were obtained by using a cross-correlation\r\nfrequency-resolved optical gating technique which allows us to retrieve the field amplitude of the\r\npropagating pulses.","lang":"eng"}],"extern":"1","issue":"18","publication":"Applied Physics Letters","doi":"10.1063/1.1624492","language":[{"iso":"eng"}],"intvolume":"        83","article_type":"original","date_updated":"2022-01-06T07:00:48Z","publication_status":"published","author":[{"last_name":"Schneider","first_name":"S.","full_name":"Schneider, S."},{"last_name":"Borri","first_name":"P.","full_name":"Borri, P."},{"full_name":"Langbein, W.","last_name":"Langbein","first_name":"W."},{"first_name":"U.","last_name":"Woggon","full_name":"Woggon, U."},{"id":"158","orcid":"0000-0001-7059-9862","first_name":"Jens","last_name":"Förstner","full_name":"Förstner, Jens"},{"full_name":"Knorr, A.","first_name":"A.","last_name":"Knorr"},{"full_name":"Sellin, R. L.","last_name":"Sellin","first_name":"R. L."},{"full_name":"Ouyang, D.","first_name":"D.","last_name":"Ouyang"},{"last_name":"Bimberg","first_name":"D.","full_name":"Bimberg, D."}],"publication_identifier":{"issn":["0003-6951","1077-3118"]},"year":"2003","title":"Self-induced transparency in InGaAs quantum-dot waveguides"},{"citation":{"apa":"Mertens, G., Röder, T., Matthias, H., Marsmann, H., Kitzerow, H.-S., Schweizer, S. L., Jamois, C., Wehrspohn, R. B., &#38; Neubert, M. (2003). Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals. <i>Applied Physics Letters</i>, <i>83</i>(15), 3036–3038. <a href=\"https://doi.org/10.1063/1.1614000\">https://doi.org/10.1063/1.1614000</a>","ieee":"G. Mertens <i>et al.</i>, “Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals,” <i>Applied Physics Letters</i>, vol. 83, no. 15, pp. 3036–3038, 2003, doi: <a href=\"https://doi.org/10.1063/1.1614000\">10.1063/1.1614000</a>.","chicago":"Mertens, Guido, Thorsten Röder, Heinrich Matthias, Heinrich Marsmann, Heinz-Siegfried Kitzerow, Stefan L. Schweizer, Cecile Jamois, Ralf B. Wehrspohn, and Mary Neubert. “Two- and Three-Dimensional Photonic Crystals Made of Macroporous Silicon and Liquid Crystals.” <i>Applied Physics Letters</i> 83, no. 15 (2003): 3036–38. <a href=\"https://doi.org/10.1063/1.1614000\">https://doi.org/10.1063/1.1614000</a>.","short":"G. Mertens, T. Röder, H. Matthias, H. Marsmann, H.-S. Kitzerow, S.L. Schweizer, C. Jamois, R.B. Wehrspohn, M. 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G."},{"full_name":"Thommen, V.","first_name":"V.","last_name":"Thommen"},{"full_name":"Boyen, H.-G.","last_name":"Boyen","first_name":"H.-G."},{"last_name":"Oelhafen","first_name":"P.","full_name":"Oelhafen, P."},{"first_name":"M.","last_name":"Düggelin","full_name":"Düggelin, M."},{"full_name":"Mathis, D.","first_name":"D.","last_name":"Mathis"},{"last_name":"Guggenheim","first_name":"R.","full_name":"Guggenheim, R."}],"publication_status":"published","date_updated":"2023-01-24T08:30:54Z","page":"2383-2385","language":[{"iso":"eng"}],"_id":"22620","user_id":"54556","doi":"10.1063/1.1465529","publication":"Applied Physics Letters","citation":{"ieee":"M. T. de los Arcos de Pedro <i>et al.</i>, “Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition,” <i>Applied Physics Letters</i>, pp. 2383–2385, 2002, doi: <a href=\"https://doi.org/10.1063/1.1465529\">10.1063/1.1465529</a>.","apa":"de los Arcos de Pedro, M. T., Vonau, F., Garnier, M. G., Thommen, V., Boyen, H.-G., Oelhafen, P., Düggelin, M., Mathis, D., &#38; Guggenheim, R. (2002). Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition. <i>Applied Physics Letters</i>, 2383–2385. <a href=\"https://doi.org/10.1063/1.1465529\">https://doi.org/10.1063/1.1465529</a>","short":"M.T. de los Arcos de Pedro, F. Vonau, M.G. Garnier, V. Thommen, H.-G. Boyen, P. Oelhafen, M. Düggelin, D. Mathis, R. Guggenheim, Applied Physics Letters (2002) 2383–2385.","chicago":"Arcos de Pedro, Maria Teresa de los, F. Vonau, M. G. Garnier, V. Thommen, H.-G. Boyen, P. Oelhafen, M. Düggelin, D. Mathis, and R. Guggenheim. “Influence of Iron–Silicon Interaction on the Growth of Carbon Nanotubes Produced by Chemical Vapor Deposition.” <i>Applied Physics Letters</i>, 2002, 2383–85. <a href=\"https://doi.org/10.1063/1.1465529\">https://doi.org/10.1063/1.1465529</a>.","mla":"de los Arcos de Pedro, Maria Teresa, et al. “Influence of Iron–Silicon Interaction on the Growth of Carbon Nanotubes Produced by Chemical Vapor Deposition.” <i>Applied Physics Letters</i>, 2002, pp. 2383–85, doi:<a href=\"https://doi.org/10.1063/1.1465529\">10.1063/1.1465529</a>.","bibtex":"@article{de los Arcos de Pedro_Vonau_Garnier_Thommen_Boyen_Oelhafen_Düggelin_Mathis_Guggenheim_2002, title={Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition}, DOI={<a href=\"https://doi.org/10.1063/1.1465529\">10.1063/1.1465529</a>}, journal={Applied Physics Letters}, author={de los Arcos de Pedro, Maria Teresa and Vonau, F. and Garnier, M. G. and Thommen, V. and Boyen, H.-G. and Oelhafen, P. and Düggelin, M. and Mathis, D. and Guggenheim, R.}, year={2002}, pages={2383–2385} }","ama":"de los Arcos de Pedro MT, Vonau F, Garnier MG, et al. Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition. <i>Applied Physics Letters</i>. Published online 2002:2383-2385. doi:<a href=\"https://doi.org/10.1063/1.1465529\">10.1063/1.1465529</a>"},"extern":"1","date_created":"2021-07-07T11:48:16Z","type":"journal_article","department":[{"_id":"302"}]}]