TY - JOUR AU - Lei, W. AU - Notthoff, C. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7975 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy VL - 96 ER - TY - JOUR AU - Lei, W. AU - Notthoff, C. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7980 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy VL - 96 ER - TY - JOUR AU - Csontos, M. AU - Komijani, Y. AU - Shorubalko, I. AU - Ensslin, K. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7982 IS - 2 JF - Applied Physics Letters SN - 0003-6951 TI - Nanostructures in p-GaAs with improved tunability VL - 97 ER - TY - JOUR AU - Wiemann, M. AU - Wieser, U. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7983 IS - 6 JF - Applied Physics Letters SN - 0003-6951 TI - Full-wave rectification based upon hot-electron thermopower VL - 97 ER - TY - JOUR AU - Mehta, M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Michaelis de Vasconcellos, S. AU - Zrenner, A. AU - Meier, C. ID - 7990 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode VL - 97 ER - TY - JOUR AB - We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices. AU - Mehta, M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Michaelis de Vasconcellos, S. AU - Zrenner, Artur AU - Meier, Cedrik ID - 4550 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode VL - 97 ER - TY - JOUR AB - A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements. AU - Tschumak, E. AU - Granzner, R. AU - Lindner, Jörg AU - Schwierz, F. AU - Lischka, K. AU - Nagasawa, H. AU - Abe, M. AU - As, Donald ID - 4194 IS - 25 JF - Applied Physics Letters SN - 0003-6951 TI - Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001) VL - 96 ER - TY - JOUR AU - Buchholz, S. S. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7973 IS - 2 JF - Applied Physics Letters SN - 0003-6951 TI - Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring VL - 94 ER - TY - JOUR AU - Buchholz, S. S. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8579 JF - Applied Physics Letters SN - 0003-6951 TI - Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring ER - TY - JOUR AU - Blokland, J. H. AU - Bozkurt, M. AU - Ulloa, J. M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Koenraad, P. M. AU - Christianen, P. C. M. AU - Maan, J. C. ID - 8580 JF - Applied Physics Letters SN - 0003-6951 TI - Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy ER -