TY - JOUR AU - Meier, Cedrik AU - Hennessy, Kevin ID - 7644 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - Technique for tilting GaAs photonic crystal nanocavities out of plane VL - 90 ER - TY - JOUR AU - Lo, F.-Y. AU - Melnikov, A. AU - Reuter, Dirk AU - Wieck, A. D. AU - Ney, V. AU - Kammermeier, T. AU - Ney, A. AU - Schörmann, J. AU - Potthast, S. AU - As, D. J. AU - Lischka, K. ID - 8630 JF - Applied Physics Letters SN - 0003-6951 TI - Magnetic and structural properties of Gd-implanted zinc-blende GaN ER - TY - JOUR AU - Mehta, M. AU - Reuter, Dirk AU - Melnikov, A. AU - Wieck, A. D. AU - Remhof, A. ID - 8632 JF - Applied Physics Letters SN - 0003-6951 TI - Focused ion beam implantation induced site-selective growth of InAs quantum dots ER - TY - JOUR AB - The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes. The authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support. AU - Waitz, T. AU - Tiemann, Michael AU - Klar, P. J. AU - Sann, J. AU - Stehr, J. AU - Meyer, B. K. ID - 25986 JF - Applied Physics Letters SN - 0003-6951 TI - Crystalline ZnO with an enhanced surface area obtained by nanocasting ER - TY - JOUR AU - Scharnberg, M. AU - Zaporojtchenko, V. AU - Adelung, R. AU - Faupel, F. AU - Pannemann, C. AU - Diekmann, T. AU - Hilleringmann, Ulrich ID - 39561 IS - 1 JF - Applied Physics Letters KW - Physics and Astronomy (miscellaneous) SN - 0003-6951 TI - Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer VL - 90 ER - TY - JOUR AU - Meier, Cedrik AU - Hennessy, Kevin AU - Haberer, Elaine D. AU - Sharma, Rajat AU - Choi, Yong-Seok AU - McGroddy, Kelly AU - Keller, Stacia AU - DenBaars, Steven P. AU - Nakamura, Shuji AU - Hu, Evelyn L. ID - 7651 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Visible resonant modes in GaN-based photonic crystal membrane cavities VL - 88 ER - TY - JOUR AU - Knop, M. AU - Wieser, U. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8648 JF - Applied Physics Letters SN - 0003-6951 TI - Ballistic rectification in an asymmetric mesoscopic cross junction ER - TY - JOUR AU - Schmidt, R. AU - Scholz, U. AU - Vitzethum, M. AU - Fix, R. AU - Metzner, C. AU - Kailuweit, P. AU - Reuter, Dirk AU - Wieck, A. AU - Hübner, M. C. AU - Stufler, S. AU - Zrenner, A. AU - Malzer, S. AU - Döhler, G. H. ID - 8654 JF - Applied Physics Letters SN - 0003-6951 TI - Fabrication of genuine single-quantum-dot light-emitting diodes ER - TY - JOUR AU - Stavarache, V. AU - Reuter, Dirk AU - Wieck, A. D. AU - Schwab, M. AU - Yakovlev, D. R. AU - Oulton, R. AU - Bayer, M. ID - 8665 JF - Applied Physics Letters SN - 0003-6951 TI - Control of quantum dot excitons by lateral electric fields ER - TY - JOUR AU - Hohage, P. E. AU - Bacher, G. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8671 JF - Applied Physics Letters SN - 0003-6951 TI - Coherent spin oscillations in bulk GaAs at room temperature ER -