TY - JOUR AU - Chen, J. C. H. AU - Wang, D. Q. AU - Klochan, O. AU - Micolich, A. P. AU - Das Gupta, K. AU - Sfigakis, F. AU - Ritchie, D. A. AU - Reuter, Dirk AU - Wieck, A. D. AU - Hamilton, A. R. ID - 7330 IS - 5 JF - Applied Physics Letters SN - 0003-6951 TI - Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure VL - 100 ER - TY - JOUR AU - Kröger, Philipp AU - Ruth, Marcel AU - Weber, Nils AU - Meier, Cedrik ID - 7491 IS - 26 JF - Applied Physics Letters SN - 0003-6951 TI - Carrier localization in ZnO quantum wires VL - 100 ER - TY - JOUR AU - Ehiasarian, A. P. AU - Hecimovic, A. AU - de los Arcos de Pedro, Maria Teresa AU - New, R. AU - Schulz-von der Gathen, V. AU - Böke, M. AU - Winter, J. ID - 22599 JF - Applied Physics Letters SN - 0003-6951 TI - High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization ER - TY - JOUR AU - Atorf, B. AU - Hoischen, A. AU - Ros, M. B. AU - Gimeno, N. AU - Tschierske, C. AU - Dantlgraber, G. AU - Kitzerow, Heinz-Siegfried ID - 39729 IS - 22 JF - Applied Physics Letters KW - Physics and Astronomy (miscellaneous) SN - 0003-6951 TI - Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules VL - 100 ER - TY - JOUR AU - Schmidtke, Jürgen AU - Jünnemann, Gisela AU - Keuker-Baumann, Susanne AU - Kitzerow, Heinz-Siegfried ID - 39728 IS - 5 JF - Applied Physics Letters KW - Physics and Astronomy (miscellaneous) SN - 0003-6951 TI - Electrical fine tuning of liquid crystal lasers VL - 101 ER - TY - JOUR AU - Marquardt, B. AU - Beckel, A. AU - Lorke, A. AU - Wieck, A. D. AU - Reuter, Dirk AU - Geller, M. ID - 7697 IS - 22 JF - Applied Physics Letters SN - 0003-6951 TI - The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration VL - 99 ER - TY - JOUR AU - Buchholz, Sven S. AU - Kunze, Ulrich AU - Reuter, Dirk AU - Wieck, Andreas D. AU - Fischer, Saskia F. ID - 7710 IS - 10 JF - Applied Physics Letters SN - 0003-6951 TI - Mode-filtered electron injection into a waveguide interferometer VL - 98 ER - TY - JOUR AU - Chen, Y. S. AU - Huang, J. AU - Reuter, Dirk AU - Ludwig, A. AU - Wieck, A. D. AU - Bacher, G. ID - 7711 IS - 8 JF - Applied Physics Letters SN - 0003-6951 TI - Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil VL - 98 ER - TY - JOUR AU - Soldat, Henning AU - Li, Mingyuan AU - Gerhardt, Nils C. AU - Hofmann, Martin R. AU - Ludwig, Arne AU - Ebbing, Astrid AU - Reuter, Dirk AU - Wieck, Andreas D. AU - Stromberg, Frank AU - Keune, Werner AU - Wende, Heiko ID - 7311 IS - 5 JF - Applied Physics Letters SN - 0003-6951 TI - Room temperature spin relaxation length in spin light-emitting diodes VL - 99 ER - TY - JOUR AU - Lorenz, Alexander AU - Kitzerow, Heinz-Siegfried ID - 39735 IS - 24 JF - Applied Physics Letters KW - Physics and Astronomy (miscellaneous) SN - 0003-6951 TI - Efficient electro-optic switching in a photonic liquid crystal fiber VL - 98 ER - TY - JOUR AU - Lei, W. AU - Notthoff, C. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7975 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy VL - 96 ER - TY - JOUR AU - Lei, W. AU - Notthoff, C. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7980 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy VL - 96 ER - TY - JOUR AU - Csontos, M. AU - Komijani, Y. AU - Shorubalko, I. AU - Ensslin, K. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7982 IS - 2 JF - Applied Physics Letters SN - 0003-6951 TI - Nanostructures in p-GaAs with improved tunability VL - 97 ER - TY - JOUR AU - Wiemann, M. AU - Wieser, U. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7983 IS - 6 JF - Applied Physics Letters SN - 0003-6951 TI - Full-wave rectification based upon hot-electron thermopower VL - 97 ER - TY - JOUR AU - Mehta, M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Michaelis de Vasconcellos, S. AU - Zrenner, A. AU - Meier, C. ID - 7990 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode VL - 97 ER - TY - JOUR AB - We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices. AU - Mehta, M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Michaelis de Vasconcellos, S. AU - Zrenner, Artur AU - Meier, Cedrik ID - 4550 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode VL - 97 ER - TY - JOUR AB - A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements. AU - Tschumak, E. AU - Granzner, R. AU - Lindner, Jörg AU - Schwierz, F. AU - Lischka, K. AU - Nagasawa, H. AU - Abe, M. AU - As, Donald ID - 4194 IS - 25 JF - Applied Physics Letters SN - 0003-6951 TI - Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001) VL - 96 ER - TY - JOUR AU - Buchholz, S. S. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7973 IS - 2 JF - Applied Physics Letters SN - 0003-6951 TI - Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring VL - 94 ER - TY - JOUR AU - Buchholz, S. S. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8579 JF - Applied Physics Letters SN - 0003-6951 TI - Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring ER - TY - JOUR AU - Blokland, J. H. AU - Bozkurt, M. AU - Ulloa, J. M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Koenraad, P. M. AU - Christianen, P. C. M. AU - Maan, J. C. ID - 8580 JF - Applied Physics Letters SN - 0003-6951 TI - Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy ER -