TY - JOUR AU - Lei, W. AU - Notthoff, C. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7975 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy VL - 96 ER - TY - JOUR AU - Lei, W. AU - Notthoff, C. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7980 IS - 3 JF - Applied Physics Letters SN - 0003-6951 TI - Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy VL - 96 ER - TY - JOUR AU - Csontos, M. AU - Komijani, Y. AU - Shorubalko, I. AU - Ensslin, K. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7982 IS - 2 JF - Applied Physics Letters SN - 0003-6951 TI - Nanostructures in p-GaAs with improved tunability VL - 97 ER - TY - JOUR AU - Wiemann, M. AU - Wieser, U. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7983 IS - 6 JF - Applied Physics Letters SN - 0003-6951 TI - Full-wave rectification based upon hot-electron thermopower VL - 97 ER - TY - JOUR AU - Mehta, M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Michaelis de Vasconcellos, S. AU - Zrenner, A. AU - Meier, C. ID - 7990 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode VL - 97 ER - TY - JOUR AB - We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices. AU - Mehta, M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Michaelis de Vasconcellos, S. AU - Zrenner, Artur AU - Meier, Cedrik ID - 4550 IS - 14 JF - Applied Physics Letters SN - 0003-6951 TI - An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode VL - 97 ER - TY - JOUR AB - A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements. AU - Tschumak, E. AU - Granzner, R. AU - Lindner, Jörg AU - Schwierz, F. AU - Lischka, K. AU - Nagasawa, H. AU - Abe, M. AU - As, Donald ID - 4194 IS - 25 JF - Applied Physics Letters SN - 0003-6951 TI - Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001) VL - 96 ER - TY - JOUR AU - Buchholz, S. S. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 7973 IS - 2 JF - Applied Physics Letters SN - 0003-6951 TI - Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring VL - 94 ER - TY - JOUR AU - Buchholz, S. S. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8579 JF - Applied Physics Letters SN - 0003-6951 TI - Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring ER - TY - JOUR AU - Blokland, J. H. AU - Bozkurt, M. AU - Ulloa, J. M. AU - Reuter, Dirk AU - Wieck, A. D. AU - Koenraad, P. M. AU - Christianen, P. C. M. AU - Maan, J. C. ID - 8580 JF - Applied Physics Letters SN - 0003-6951 TI - Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy ER - TY - JOUR AU - Marquardt, B. AU - Geller, M. AU - Lorke, A. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8585 JF - Applied Physics Letters SN - 0003-6951 TI - Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots ER - TY - JOUR AU - Lei, W. AU - Offer, M. AU - Lorke, A. AU - Notthoff, C. AU - Meier, Cedrik AU - Wibbelhoff, O. AU - Wieck, A. D. ID - 7640 IS - 19 JF - Applied Physics Letters SN - 0003-6951 TI - Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy VL - 92 ER - TY - JOUR AU - Lo, F.-Y. AU - Melnikov, A. AU - Reuter, Dirk AU - Cordier, Y. AU - Wieck, A. D. ID - 8603 JF - Applied Physics Letters SN - 0003-6951 TI - Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures ER - TY - JOUR AU - Hohage, P. E. AU - Nannen, J. AU - Halm, S. AU - Bacher, G. AU - Wahle, M. AU - Fischer, S. F. AU - Kunze, U. AU - Reuter, Dirk AU - Wieck, A. D. ID - 8607 JF - Applied Physics Letters SN - 0003-6951 TI - Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature ER - TY - JOUR AU - Hövel, S. AU - Gerhardt, N. C. AU - Hofmann, M. R. AU - Lo, F.-Y. AU - Reuter, Dirk AU - Wieck, A. D. AU - Schuster, E. AU - Keune, W. AU - Wende, H. AU - Petracic, O. AU - Westerholt, K. ID - 8608 JF - Applied Physics Letters SN - 0003-6951 TI - Electrical detection of photoinduced spins both at room temperature and in remanence ER - TY - JOUR AU - Hövel, S. AU - Gerhardt, N. C. AU - Hofmann, M. R. AU - Lo, F.-Y. AU - Ludwig, A. AU - Reuter, Dirk AU - Wieck, A. D. AU - Schuster, E. AU - Wende, H. AU - Keune, W. AU - Petracic, O. AU - Westerholt, K. ID - 8609 JF - Applied Physics Letters SN - 0003-6951 TI - Room temperature electrical spin injection in remanence ER - TY - JOUR AU - Hoischen, A. AU - Benning, S. A. AU - Kitzerow, Heinz-Siegfried ID - 39749 IS - 13 JF - Applied Physics Letters KW - Physics and Astronomy (miscellaneous) SN - 0003-6951 TI - Submicrometer periodic patterns fixed by photopolymerization of dissipative structures VL - 93 ER - TY - JOUR AU - Redler, Andreas AU - Kitzerow, Heinz-Siegfried ID - 39751 IS - 18 JF - Applied Physics Letters KW - Physics and Astronomy (miscellaneous) SN - 0003-6951 TI - Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal VL - 93 ER - TY - JOUR AU - Han, Xiao-Feng AU - Weng, Yu-Xiang AU - Wang, Rui AU - Chen, Xi-Hao AU - Luo, Kai Hong AU - Wu, Ling-An AU - Zhao, Jimin ID - 26076 JF - Applied Physics Letters SN - 0003-6951 TI - Single-photon level ultrafast all-optical switching ER - TY - JOUR AU - Rockstuhl, Carsten AU - Lederer, Falk AU - Zentgraf, Thomas AU - Giessen, Harald ID - 1761 IS - 15 JF - Applied Physics Letters SN - 0003-6951 TI - Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays VL - 91 ER -