--- _id: '39689' article_number: '201114' author: - first_name: Markus full_name: Wahle, Markus last_name: Wahle - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Wahle M, Kitzerow H-S. Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal. Applied Physics Letters. 2015;107(20). doi:10.1063/1.4936086 apa: Wahle, M., & Kitzerow, H.-S. (2015). Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal. Applied Physics Letters, 107(20), Article 201114. https://doi.org/10.1063/1.4936086 bibtex: '@article{Wahle_Kitzerow_2015, title={Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal}, volume={107}, DOI={10.1063/1.4936086}, number={20201114}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wahle, Markus and Kitzerow, Heinz-Siegfried}, year={2015} }' chicago: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero Dispersion Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency Addressable Liquid Crystal.” Applied Physics Letters 107, no. 20 (2015). https://doi.org/10.1063/1.4936086. ieee: 'M. Wahle and H.-S. Kitzerow, “Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal,” Applied Physics Letters, vol. 107, no. 20, Art. no. 201114, 2015, doi: 10.1063/1.4936086.' mla: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero Dispersion Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency Addressable Liquid Crystal.” Applied Physics Letters, vol. 107, no. 20, 201114, AIP Publishing, 2015, doi:10.1063/1.4936086. short: M. Wahle, H.-S. Kitzerow, Applied Physics Letters 107 (2015). date_created: 2023-01-24T18:11:41Z date_updated: 2023-01-24T18:12:09Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4936086 intvolume: ' 107' issue: '20' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electrically tunable zero dispersion wavelengths in photonic crystal fibers filled with a dual frequency addressable liquid crystal type: journal_article user_id: '254' volume: 107 year: '2015' ... --- _id: '7224' article_number: '241101' author: - first_name: J. full_name: Repp, J. last_name: Repp - first_name: G. J. full_name: Schinner, G. J. last_name: Schinner - first_name: E. full_name: Schubert, E. last_name: Schubert - first_name: A. K. full_name: Rai, A. K. last_name: Rai - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: U. full_name: Wurstbauer, U. last_name: Wurstbauer - first_name: J. P. full_name: Kotthaus, J. P. last_name: Kotthaus - first_name: A. W. full_name: Holleitner, A. W. last_name: Holleitner citation: ama: Repp J, Schinner GJ, Schubert E, et al. Confocal shift interferometry of coherent emission from trapped dipolar excitons. Applied Physics Letters. 2014;105(24). doi:10.1063/1.4904222 apa: Repp, J., Schinner, G. J., Schubert, E., Rai, A. K., Reuter, D., Wieck, A. D., … Holleitner, A. W. (2014). Confocal shift interferometry of coherent emission from trapped dipolar excitons. Applied Physics Letters, 105(24). https://doi.org/10.1063/1.4904222 bibtex: '@article{Repp_Schinner_Schubert_Rai_Reuter_Wieck_Wurstbauer_Kotthaus_Holleitner_2014, title={Confocal shift interferometry of coherent emission from trapped dipolar excitons}, volume={105}, DOI={10.1063/1.4904222}, number={24241101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Repp, J. and Schinner, G. J. and Schubert, E. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Wurstbauer, U. and Kotthaus, J. P. and Holleitner, A. W.}, year={2014} }' chicago: Repp, J., G. J. Schinner, E. Schubert, A. K. Rai, Dirk Reuter, A. D. Wieck, U. Wurstbauer, J. P. Kotthaus, and A. W. Holleitner. “Confocal Shift Interferometry of Coherent Emission from Trapped Dipolar Excitons.” Applied Physics Letters 105, no. 24 (2014). https://doi.org/10.1063/1.4904222. ieee: J. Repp et al., “Confocal shift interferometry of coherent emission from trapped dipolar excitons,” Applied Physics Letters, vol. 105, no. 24, 2014. mla: Repp, J., et al. “Confocal Shift Interferometry of Coherent Emission from Trapped Dipolar Excitons.” Applied Physics Letters, vol. 105, no. 24, 241101, AIP Publishing, 2014, doi:10.1063/1.4904222. short: J. Repp, G.J. Schinner, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, U. Wurstbauer, J.P. Kotthaus, A.W. Holleitner, Applied Physics Letters 105 (2014). date_created: 2019-01-29T12:19:14Z date_updated: 2022-01-06T07:03:29Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4904222 intvolume: ' 105' issue: '24' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Confocal shift interferometry of coherent emission from trapped dipolar excitons type: journal_article user_id: '42514' volume: 105 year: '2014' ... --- _id: '7259' article_number: '092401' author: - first_name: J. H. full_name: Buß, J. H. last_name: Buß - first_name: J. full_name: Rudolph, J. last_name: Rudolph - first_name: S. full_name: Shvarkov, S. last_name: Shvarkov - first_name: F. full_name: Semond, F. last_name: Semond - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: D. full_name: Hägele, D. last_name: Hägele citation: ama: 'Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters. 2013;103(9). doi:10.1063/1.4819767' apa: 'Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D., & Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons. Applied Physics Letters, 103(9). https://doi.org/10.1063/1.4819767' bibtex: '@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons}, volume={103}, DOI={10.1063/1.4819767}, number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter, Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }' chicago: 'Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck, and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” Applied Physics Letters 103, no. 9 (2013). https://doi.org/10.1063/1.4819767.' ieee: 'J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,” Applied Physics Letters, vol. 103, no. 9, 2013.' mla: 'Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment of Conduction Band Electrons.” Applied Physics Letters, vol. 103, no. 9, 092401, AIP Publishing, 2013, doi:10.1063/1.4819767.' short: J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele, Applied Physics Letters 103 (2013). date_created: 2019-01-30T12:56:20Z date_updated: 2022-01-06T07:03:30Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4819767 intvolume: ' 103' issue: '9' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: 'Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons' type: journal_article user_id: '42514' volume: 103 year: '2013' ... --- _id: '3963' abstract: - lang: eng text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding microdisks were patterned by means of electron beam lithography and a two step reactive ion etching process. Micro-photoluminescence spectroscopy investigations were performed for optical characterization. We analyzed the mode spacing for disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional finite difference time domain calculations were in good agreement\r\nwith the experimental data. Whispering gallery modes of the radial orders 1 and 2 were identified by means of simulated mode field distributions." article_type: original author: - first_name: M. full_name: Bürger, M. last_name: Bürger - first_name: M. full_name: Ruth, M. last_name: Ruth - first_name: S. full_name: Declair, S. last_name: Declair - first_name: Jens full_name: Förstner, Jens id: '158' last_name: Förstner orcid: 0000-0001-7059-9862 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Donat Josef full_name: As, Donat Josef id: '14' last_name: As orcid: 0000-0003-1121-3565 citation: ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653 apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J. (2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653 bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots}, volume={102}, DOI={10.1063/1.4793653}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger, M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat Josef}, year={2013}, pages={081105} }' chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.' ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,” Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013. mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102, no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653. short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics Letters 102 (2013) 081105. date_created: 2018-08-21T07:43:22Z date_updated: 2022-01-06T07:00:01Z ddc: - '530' department: - _id: '15' - _id: '287' - _id: '284' - _id: '230' - _id: '35' doi: 10.1063/1.4793653 file: - access_level: open_access content_type: application/pdf creator: hclaudia date_created: 2018-08-21T07:47:02Z date_updated: 2018-09-04T20:08:52Z file_id: '3964' file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf file_size: 935911 relation: main_file file_date_updated: 2018-09-04T20:08:52Z has_accepted_license: '1' intvolume: ' 102' issue: '8' keyword: - tet_topic_qd - tet_topic_microdisk language: - iso: eng oa: '1' page: '081105' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots type: journal_article urn: '39635' user_id: '14' volume: 102 year: '2013' ... --- _id: '39719' article_number: '043303' author: - first_name: Joachim full_name: Vollbrecht, Joachim last_name: Vollbrecht - first_name: Olga full_name: Kasdorf, Olga last_name: Kasdorf - first_name: Viktor full_name: Quiring, Viktor last_name: Quiring - first_name: Hubertus full_name: Suche, Hubertus last_name: Suche - first_name: Harald full_name: Bock, Harald last_name: Bock - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Vollbrecht J, Kasdorf O, Quiring V, Suche H, Bock H, Kitzerow H-S. Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal. Applied Physics Letters. 2013;103(4). doi:10.1063/1.4816425 apa: Vollbrecht, J., Kasdorf, O., Quiring, V., Suche, H., Bock, H., & Kitzerow, H.-S. (2013). Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal. Applied Physics Letters, 103(4), Article 043303. https://doi.org/10.1063/1.4816425 bibtex: '@article{Vollbrecht_Kasdorf_Quiring_Suche_Bock_Kitzerow_2013, title={Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal}, volume={103}, DOI={10.1063/1.4816425}, number={4043303}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vollbrecht, Joachim and Kasdorf, Olga and Quiring, Viktor and Suche, Hubertus and Bock, Harald and Kitzerow, Heinz-Siegfried}, year={2013} }' chicago: Vollbrecht, Joachim, Olga Kasdorf, Viktor Quiring, Hubertus Suche, Harald Bock, and Heinz-Siegfried Kitzerow. “Microresonator-Enhanced Electroluminescence of an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied Physics Letters 103, no. 4 (2013). https://doi.org/10.1063/1.4816425. ieee: 'J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, and H.-S. Kitzerow, “Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal,” Applied Physics Letters, vol. 103, no. 4, Art. no. 043303, 2013, doi: 10.1063/1.4816425.' mla: Vollbrecht, Joachim, et al. “Microresonator-Enhanced Electroluminescence of an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied Physics Letters, vol. 103, no. 4, 043303, AIP Publishing, 2013, doi:10.1063/1.4816425. short: J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, H.-S. Kitzerow, Applied Physics Letters 103 (2013). date_created: 2023-01-24T18:33:09Z date_updated: 2023-01-24T18:33:39Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4816425 intvolume: ' 103' issue: '4' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Microresonator-enhanced electroluminescence of an organic light emitting diode based on a columnar liquid crystal type: journal_article user_id: '254' volume: 103 year: '2013' ... --- _id: '26066' article_number: '211119' author: - first_name: Ming-Fei full_name: Li, Ming-Fei last_name: Li - first_name: Yu-Ran full_name: Zhang, Yu-Ran last_name: Zhang - first_name: Xue-Feng full_name: Liu, Xue-Feng last_name: Liu - first_name: Xu-Ri full_name: Yao, Xu-Ri last_name: Yao - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Heng full_name: Fan, Heng last_name: Fan - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu citation: ama: Li M-F, Zhang Y-R, Liu X-F, et al. A double-threshold technique for fast time-correspondence imaging. Applied Physics Letters. Published online 2013. doi:10.1063/1.4832328 apa: Li, M.-F., Zhang, Y.-R., Liu, X.-F., Yao, X.-R., Luo, K. H., Fan, H., & Wu, L.-A. (2013). A double-threshold technique for fast time-correspondence imaging. Applied Physics Letters, Article 211119. https://doi.org/10.1063/1.4832328 bibtex: '@article{Li_Zhang_Liu_Yao_Luo_Fan_Wu_2013, title={A double-threshold technique for fast time-correspondence imaging}, DOI={10.1063/1.4832328}, number={211119}, journal={Applied Physics Letters}, author={Li, Ming-Fei and Zhang, Yu-Ran and Liu, Xue-Feng and Yao, Xu-Ri and Luo, Kai Hong and Fan, Heng and Wu, Ling-An}, year={2013} }' chicago: Li, Ming-Fei, Yu-Ran Zhang, Xue-Feng Liu, Xu-Ri Yao, Kai Hong Luo, Heng Fan, and Ling-An Wu. “A Double-Threshold Technique for Fast Time-Correspondence Imaging.” Applied Physics Letters, 2013. https://doi.org/10.1063/1.4832328. ieee: 'M.-F. Li et al., “A double-threshold technique for fast time-correspondence imaging,” Applied Physics Letters, Art. no. 211119, 2013, doi: 10.1063/1.4832328.' mla: Li, Ming-Fei, et al. “A Double-Threshold Technique for Fast Time-Correspondence Imaging.” Applied Physics Letters, 211119, 2013, doi:10.1063/1.4832328. short: M.-F. Li, Y.-R. Zhang, X.-F. Liu, X.-R. Yao, K.H. Luo, H. Fan, L.-A. Wu, Applied Physics Letters (2013). date_created: 2021-10-12T08:38:51Z date_updated: 2023-01-26T10:09:42Z doi: 10.1063/1.4832328 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: A double-threshold technique for fast time-correspondence imaging type: journal_article user_id: '36389' year: '2013' ... --- _id: '7301' article_number: '112402' author: - first_name: Henning full_name: Höpfner, Henning last_name: Höpfner - first_name: Carola full_name: Fritsche, Carola last_name: Fritsche - first_name: Arne full_name: Ludwig, Arne last_name: Ludwig - first_name: Astrid full_name: Ludwig, Astrid last_name: Ludwig - first_name: Frank full_name: Stromberg, Frank last_name: Stromberg - first_name: Heiko full_name: Wende, Heiko last_name: Wende - first_name: Werner full_name: Keune, Werner last_name: Keune - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Nils C. full_name: Gerhardt, Nils C. last_name: Gerhardt - first_name: Martin R. full_name: Hofmann, Martin R. last_name: Hofmann citation: ama: Höpfner H, Fritsche C, Ludwig A, et al. Magnetic field dependence of the spin relaxation length in spin light-emitting diodes. Applied Physics Letters. 2012;101(11). doi:10.1063/1.4752162 apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2012). Magnetic field dependence of the spin relaxation length in spin light-emitting diodes. Applied Physics Letters, 101(11). https://doi.org/10.1063/1.4752162 bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2012, title={Magnetic field dependence of the spin relaxation length in spin light-emitting diodes}, volume={101}, DOI={10.1063/1.4752162}, number={11112402}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2012} }' chicago: Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Magnetic Field Dependence of the Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters 101, no. 11 (2012). https://doi.org/10.1063/1.4752162. ieee: H. Höpfner et al., “Magnetic field dependence of the spin relaxation length in spin light-emitting diodes,” Applied Physics Letters, vol. 101, no. 11, 2012. mla: Höpfner, Henning, et al. “Magnetic Field Dependence of the Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 101, no. 11, 112402, AIP Publishing, 2012, doi:10.1063/1.4752162. short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Applied Physics Letters 101 (2012). date_created: 2019-01-31T09:05:22Z date_updated: 2022-01-06T07:03:33Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4752162 intvolume: ' 101' issue: '11' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Magnetic field dependence of the spin relaxation length in spin light-emitting diodes type: journal_article user_id: '42514' volume: 101 year: '2012' ... --- _id: '7312' article_number: '232110' author: - first_name: Andreas full_name: Beckel, Andreas last_name: Beckel - first_name: Daming full_name: Zhou, Daming last_name: Zhou - first_name: Bastian full_name: Marquardt, Bastian last_name: Marquardt - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Martin full_name: Geller, Martin last_name: Geller - first_name: Axel full_name: Lorke, Axel last_name: Lorke citation: ama: Beckel A, Zhou D, Marquardt B, et al. Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems. Applied Physics Letters. 2012;100(23). doi:10.1063/1.4728114 apa: Beckel, A., Zhou, D., Marquardt, B., Reuter, D., Wieck, A. D., Geller, M., & Lorke, A. (2012). Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems. Applied Physics Letters, 100(23). https://doi.org/10.1063/1.4728114 bibtex: '@article{Beckel_Zhou_Marquardt_Reuter_Wieck_Geller_Lorke_2012, title={Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems}, volume={100}, DOI={10.1063/1.4728114}, number={23232110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Beckel, Andreas and Zhou, Daming and Marquardt, Bastian and Reuter, Dirk and Wieck, Andreas D. and Geller, Martin and Lorke, Axel}, year={2012} }' chicago: Beckel, Andreas, Daming Zhou, Bastian Marquardt, Dirk Reuter, Andreas D. Wieck, Martin Geller, and Axel Lorke. “Momentum Matching in the Tunneling between 2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters 100, no. 23 (2012). https://doi.org/10.1063/1.4728114. ieee: A. Beckel et al., “Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems,” Applied Physics Letters, vol. 100, no. 23, 2012. mla: Beckel, Andreas, et al. “Momentum Matching in the Tunneling between 2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters, vol. 100, no. 23, 232110, AIP Publishing, 2012, doi:10.1063/1.4728114. short: A. Beckel, D. Zhou, B. Marquardt, D. Reuter, A.D. Wieck, M. Geller, A. Lorke, Applied Physics Letters 100 (2012). date_created: 2019-01-31T10:22:42Z date_updated: 2022-01-06T07:03:34Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4728114 intvolume: ' 100' issue: '23' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Momentum matching in the tunneling between 2-dimensional and 0-dimensional electron systems type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7313' article_number: '232107' author: - first_name: A. full_name: Schwan, A. last_name: Schwan - first_name: S. full_name: Varwig, S. last_name: Varwig - first_name: A. full_name: Greilich, A. last_name: Greilich - first_name: D. R. full_name: Yakovlev, D. R. last_name: Yakovlev - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: M. full_name: Bayer, M. last_name: Bayer citation: ama: Schwan A, Varwig S, Greilich A, et al. Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters. 2012;100(23). doi:10.1063/1.4726264 apa: Schwan, A., Varwig, S., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A. D., & Bayer, M. (2012). Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters, 100(23). https://doi.org/10.1063/1.4726264 bibtex: '@article{Schwan_Varwig_Greilich_Yakovlev_Reuter_Wieck_Bayer_2012, title={Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble}, volume={100}, DOI={10.1063/1.4726264}, number={23232107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schwan, A. and Varwig, S. and Greilich, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2012} }' chicago: Schwan, A., S. Varwig, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Non-Resonant Optical Excitation of Mode-Locked Electron Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters 100, no. 23 (2012). https://doi.org/10.1063/1.4726264. ieee: A. Schwan et al., “Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble,” Applied Physics Letters, vol. 100, no. 23, 2012. mla: Schwan, A., et al. “Non-Resonant Optical Excitation of Mode-Locked Electron Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters, vol. 100, no. 23, 232107, AIP Publishing, 2012, doi:10.1063/1.4726264. short: A. Schwan, S. Varwig, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Applied Physics Letters 100 (2012). date_created: 2019-01-31T10:23:29Z date_updated: 2022-01-06T07:03:34Z department: - _id: '15' - _id: '230' doi: 10.1063/1.4726264 intvolume: ' 100' issue: '23' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7327' article_number: '132103' author: - first_name: J. full_name: Huang, J. last_name: Huang - first_name: Y. S. full_name: Chen, Y. S. last_name: Chen - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: G. full_name: Bacher, G. last_name: Bacher citation: ama: Huang J, Chen YS, Ludwig A, Reuter D, Wieck AD, Bacher G. Electron-nuclei spin coupling in GaAs—Free versus localized electrons. Applied Physics Letters. 2012;100(13). doi:10.1063/1.3699261 apa: Huang, J., Chen, Y. S., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher, G. (2012). Electron-nuclei spin coupling in GaAs—Free versus localized electrons. Applied Physics Letters, 100(13). https://doi.org/10.1063/1.3699261 bibtex: '@article{Huang_Chen_Ludwig_Reuter_Wieck_Bacher_2012, title={Electron-nuclei spin coupling in GaAs—Free versus localized electrons}, volume={100}, DOI={10.1063/1.3699261}, number={13132103}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, J. and Chen, Y. S. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher, G.}, year={2012} }' chicago: Huang, J., Y. S. Chen, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied Physics Letters 100, no. 13 (2012). https://doi.org/10.1063/1.3699261. ieee: J. Huang, Y. S. Chen, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Electron-nuclei spin coupling in GaAs—Free versus localized electrons,” Applied Physics Letters, vol. 100, no. 13, 2012. mla: Huang, J., et al. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied Physics Letters, vol. 100, no. 13, 132103, AIP Publishing, 2012, doi:10.1063/1.3699261. short: J. Huang, Y.S. Chen, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Applied Physics Letters 100 (2012). date_created: 2019-01-31T11:11:08Z date_updated: 2022-01-06T07:03:35Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3699261 intvolume: ' 100' issue: '13' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electron-nuclei spin coupling in GaAs—Free versus localized electrons type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7330' article_number: '052101' author: - first_name: J. C. H. full_name: Chen, J. C. H. last_name: Chen - first_name: D. Q. full_name: Wang, D. Q. last_name: Wang - first_name: O. full_name: Klochan, O. last_name: Klochan - first_name: A. P. full_name: Micolich, A. P. last_name: Micolich - first_name: K. full_name: Das Gupta, K. last_name: Das Gupta - first_name: F. full_name: Sfigakis, F. last_name: Sfigakis - first_name: D. A. full_name: Ritchie, D. A. last_name: Ritchie - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. R. full_name: Hamilton, A. R. last_name: Hamilton citation: ama: Chen JCH, Wang DQ, Klochan O, et al. Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters. 2012;100(5). doi:10.1063/1.3673837 apa: Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F., … Hamilton, A. R. (2012). Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100(5). https://doi.org/10.1063/1.3673837 bibtex: '@article{Chen_Wang_Klochan_Micolich_Das Gupta_Sfigakis_Ritchie_Reuter_Wieck_Hamilton_2012, title={Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure}, volume={100}, DOI={10.1063/1.3673837}, number={5052101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, J. C. H. and Wang, D. Q. and Klochan, O. and Micolich, A. P. and Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Reuter, Dirk and Wieck, A. D. and Hamilton, A. R.}, year={2012} }' chicago: Chen, J. C. H., D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, Dirk Reuter, A. D. Wieck, and A. R. Hamilton. “Fabrication and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters 100, no. 5 (2012). https://doi.org/10.1063/1.3673837. ieee: J. C. H. Chen et al., “Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure,” Applied Physics Letters, vol. 100, no. 5, 2012. mla: Chen, J. C. H., et al. “Fabrication and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters, vol. 100, no. 5, 052101, AIP Publishing, 2012, doi:10.1063/1.3673837. short: J.C.H. Chen, D.Q. Wang, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis, D.A. Ritchie, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters 100 (2012). date_created: 2019-01-31T11:14:10Z date_updated: 2022-01-06T07:03:35Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3673837 intvolume: ' 100' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure type: journal_article user_id: '42514' volume: 100 year: '2012' ... --- _id: '7491' article_number: '263114' author: - first_name: Philipp full_name: Kröger, Philipp last_name: Kröger - first_name: Marcel full_name: Ruth, Marcel last_name: Ruth - first_name: Nils full_name: Weber, Nils last_name: Weber - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Kröger P, Ruth M, Weber N, Meier C. Carrier localization in ZnO quantum wires. Applied Physics Letters. 2012;100(26). doi:10.1063/1.4731767 apa: Kröger, P., Ruth, M., Weber, N., & Meier, C. (2012). Carrier localization in ZnO quantum wires. Applied Physics Letters, 100(26). https://doi.org/10.1063/1.4731767 bibtex: '@article{Kröger_Ruth_Weber_Meier_2012, title={Carrier localization in ZnO quantum wires}, volume={100}, DOI={10.1063/1.4731767}, number={26263114}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kröger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik}, year={2012} }' chicago: Kröger, Philipp, Marcel Ruth, Nils Weber, and Cedrik Meier. “Carrier Localization in ZnO Quantum Wires.” Applied Physics Letters 100, no. 26 (2012). https://doi.org/10.1063/1.4731767. ieee: P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum wires,” Applied Physics Letters, vol. 100, no. 26, 2012. mla: Kröger, Philipp, et al. “Carrier Localization in ZnO Quantum Wires.” Applied Physics Letters, vol. 100, no. 26, 263114, AIP Publishing, 2012, doi:10.1063/1.4731767. short: P. Kröger, M. Ruth, N. Weber, C. Meier, Applied Physics Letters 100 (2012). date_created: 2019-02-04T14:30:23Z date_updated: 2022-01-06T07:03:39Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1063/1.4731767 intvolume: ' 100' issue: '26' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Carrier localization in ZnO quantum wires type: journal_article user_id: '20798' volume: 100 year: '2012' ... --- _id: '22599' article_number: '114101' author: - first_name: A. P. full_name: Ehiasarian, A. P. last_name: Ehiasarian - first_name: A. full_name: Hecimovic, A. last_name: Hecimovic - first_name: Maria Teresa full_name: de los Arcos de Pedro, Maria Teresa id: '54556' last_name: de los Arcos de Pedro - first_name: R. full_name: New, R. last_name: New - first_name: V. full_name: Schulz-von der Gathen, V. last_name: Schulz-von der Gathen - first_name: M. full_name: Böke, M. last_name: Böke - first_name: J. full_name: Winter, J. last_name: Winter citation: ama: 'Ehiasarian AP, Hecimovic A, de los Arcos de Pedro MT, et al. High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization. Applied Physics Letters. Published online 2012. doi:10.1063/1.3692172' apa: 'Ehiasarian, A. P., Hecimovic, A., de los Arcos de Pedro, M. T., New, R., Schulz-von der Gathen, V., Böke, M., & Winter, J. (2012). High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization. Applied Physics Letters, Article 114101. https://doi.org/10.1063/1.3692172' bibtex: '@article{Ehiasarian_Hecimovic_de los Arcos de Pedro_New_Schulz-von der Gathen_Böke_Winter_2012, title={High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization}, DOI={10.1063/1.3692172}, number={114101}, journal={Applied Physics Letters}, author={Ehiasarian, A. P. and Hecimovic, A. and de los Arcos de Pedro, Maria Teresa and New, R. and Schulz-von der Gathen, V. and Böke, M. and Winter, J.}, year={2012} }' chicago: 'Ehiasarian, A. P., A. Hecimovic, Maria Teresa de los Arcos de Pedro, R. New, V. Schulz-von der Gathen, M. Böke, and J. Winter. “High Power Impulse Magnetron Sputtering Discharges: Instabilities and Plasma Self-Organization.” Applied Physics Letters, 2012. https://doi.org/10.1063/1.3692172.' ieee: 'A. P. Ehiasarian et al., “High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization,” Applied Physics Letters, Art. no. 114101, 2012, doi: 10.1063/1.3692172.' mla: 'Ehiasarian, A. P., et al. “High Power Impulse Magnetron Sputtering Discharges: Instabilities and Plasma Self-Organization.” Applied Physics Letters, 114101, 2012, doi:10.1063/1.3692172.' short: A.P. Ehiasarian, A. Hecimovic, M.T. de los Arcos de Pedro, R. New, V. Schulz-von der Gathen, M. Böke, J. Winter, Applied Physics Letters (2012). date_created: 2021-07-07T11:22:50Z date_updated: 2023-01-24T08:24:51Z department: - _id: '302' doi: 10.1063/1.3692172 extern: '1' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: 'High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization' type: journal_article user_id: '54556' year: '2012' ... --- _id: '39729' article_number: '223301' author: - first_name: B. full_name: Atorf, B. last_name: Atorf - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: M. B. full_name: Ros, M. B. last_name: Ros - first_name: N. full_name: Gimeno, N. last_name: Gimeno - first_name: C. full_name: Tschierske, C. last_name: Tschierske - first_name: G. full_name: Dantlgraber, G. last_name: Dantlgraber - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. Applied Physics Letters. 2012;100(22). doi:10.1063/1.4722794 apa: Atorf, B., Hoischen, A., Ros, M. B., Gimeno, N., Tschierske, C., Dantlgraber, G., & Kitzerow, H.-S. (2012). Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. Applied Physics Letters, 100(22), Article 223301. https://doi.org/10.1063/1.4722794 bibtex: '@article{Atorf_Hoischen_Ros_Gimeno_Tschierske_Dantlgraber_Kitzerow_2012, title={Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules}, volume={100}, DOI={10.1063/1.4722794}, number={22223301}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske, C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}, year={2012} }' chicago: Atorf, B., A. Hoischen, M. B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber, and Heinz-Siegfried Kitzerow. “Switching Performance of a Polymer-Stabilized Antiferroelectric Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters 100, no. 22 (2012). https://doi.org/10.1063/1.4722794. ieee: 'B. Atorf et al., “Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules,” Applied Physics Letters, vol. 100, no. 22, Art. no. 223301, 2012, doi: 10.1063/1.4722794.' mla: Atorf, B., et al. “Switching Performance of a Polymer-Stabilized Antiferroelectric Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters, vol. 100, no. 22, 223301, AIP Publishing, 2012, doi:10.1063/1.4722794. short: B. Atorf, A. Hoischen, M.B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber, H.-S. Kitzerow, Applied Physics Letters 100 (2012). date_created: 2023-01-24T18:39:05Z date_updated: 2023-01-24T18:39:34Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4722794 intvolume: ' 100' issue: '22' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules type: journal_article user_id: '254' volume: 100 year: '2012' ... --- _id: '39728' article_number: '051117' author: - first_name: Jürgen full_name: Schmidtke, Jürgen last_name: Schmidtke - first_name: Gisela full_name: Jünnemann, Gisela last_name: Jünnemann - first_name: Susanne full_name: Keuker-Baumann, Susanne last_name: Keuker-Baumann - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning of liquid crystal lasers. Applied Physics Letters. 2012;101(5). doi:10.1063/1.4739840 apa: Schmidtke, J., Jünnemann, G., Keuker-Baumann, S., & Kitzerow, H.-S. (2012). Electrical fine tuning of liquid crystal lasers. Applied Physics Letters, 101(5), Article 051117. https://doi.org/10.1063/1.4739840 bibtex: '@article{Schmidtke_Jünnemann_Keuker-Baumann_Kitzerow_2012, title={Electrical fine tuning of liquid crystal lasers}, volume={101}, DOI={10.1063/1.4739840}, number={5051117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and Kitzerow, Heinz-Siegfried}, year={2012} }' chicago: Schmidtke, Jürgen, Gisela Jünnemann, Susanne Keuker-Baumann, and Heinz-Siegfried Kitzerow. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics Letters 101, no. 5 (2012). https://doi.org/10.1063/1.4739840. ieee: 'J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, and H.-S. Kitzerow, “Electrical fine tuning of liquid crystal lasers,” Applied Physics Letters, vol. 101, no. 5, Art. no. 051117, 2012, doi: 10.1063/1.4739840.' mla: Schmidtke, Jürgen, et al. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics Letters, vol. 101, no. 5, 051117, AIP Publishing, 2012, doi:10.1063/1.4739840. short: J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, H.-S. Kitzerow, Applied Physics Letters 101 (2012). date_created: 2023-01-24T18:38:22Z date_updated: 2023-01-24T18:38:50Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.4739840 intvolume: ' 101' issue: '5' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electrical fine tuning of liquid crystal lasers type: journal_article user_id: '254' volume: 101 year: '2012' ... --- _id: '7697' article_number: '223510' author: - first_name: B. full_name: Marquardt, B. last_name: Marquardt - first_name: A. full_name: Beckel, A. last_name: Beckel - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: M. full_name: Geller, M. last_name: Geller citation: ama: 'Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics Letters. 2011;99(22). doi:10.1063/1.3665070' apa: 'Marquardt, B., Beckel, A., Lorke, A., Wieck, A. D., Reuter, D., & Geller, M. (2011). The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics Letters, 99(22). https://doi.org/10.1063/1.3665070' bibtex: '@article{Marquardt_Beckel_Lorke_Wieck_Reuter_Geller_2011, title={The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration}, volume={99}, DOI={10.1063/1.3665070}, number={22223510}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter, Dirk and Geller, M.}, year={2011} }' chicago: 'Marquardt, B., A. Beckel, A. Lorke, A. D. Wieck, Dirk Reuter, and M. Geller. “The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters 99, no. 22 (2011). https://doi.org/10.1063/1.3665070.' ieee: 'B. Marquardt, A. Beckel, A. Lorke, A. D. Wieck, D. Reuter, and M. Geller, “The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration,” Applied Physics Letters, vol. 99, no. 22, 2011.' mla: 'Marquardt, B., et al. “The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters, vol. 99, no. 22, 223510, AIP Publishing, 2011, doi:10.1063/1.3665070.' short: B. Marquardt, A. Beckel, A. Lorke, A.D. Wieck, D. Reuter, M. Geller, Applied Physics Letters 99 (2011). date_created: 2019-02-14T09:41:25Z date_updated: 2022-01-06T07:03:44Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3665070 intvolume: ' 99' issue: '22' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: 'The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration' type: journal_article user_id: '42514' volume: 99 year: '2011' ... --- _id: '7710' article_number: '102111' author: - first_name: Sven S. full_name: Buchholz, Sven S. last_name: Buchholz - first_name: Ulrich full_name: Kunze, Ulrich last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Saskia F. full_name: Fischer, Saskia F. last_name: Fischer citation: ama: Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron injection into a waveguide interferometer. Applied Physics Letters. 2011;98(10). doi:10.1063/1.3563714 apa: Buchholz, S. S., Kunze, U., Reuter, D., Wieck, A. D., & Fischer, S. F. (2011). Mode-filtered electron injection into a waveguide interferometer. Applied Physics Letters, 98(10). https://doi.org/10.1063/1.3563714 bibtex: '@article{Buchholz_Kunze_Reuter_Wieck_Fischer_2011, title={Mode-filtered electron injection into a waveguide interferometer}, volume={98}, DOI={10.1063/1.3563714}, number={10102111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Fischer, Saskia F.}, year={2011} }' chicago: Buchholz, Sven S., Ulrich Kunze, Dirk Reuter, Andreas D. Wieck, and Saskia F. Fischer. “Mode-Filtered Electron Injection into a Waveguide Interferometer.” Applied Physics Letters 98, no. 10 (2011). https://doi.org/10.1063/1.3563714. ieee: S. S. Buchholz, U. Kunze, D. Reuter, A. D. Wieck, and S. F. Fischer, “Mode-filtered electron injection into a waveguide interferometer,” Applied Physics Letters, vol. 98, no. 10, 2011. mla: Buchholz, Sven S., et al. “Mode-Filtered Electron Injection into a Waveguide Interferometer.” Applied Physics Letters, vol. 98, no. 10, 102111, AIP Publishing, 2011, doi:10.1063/1.3563714. short: S.S. Buchholz, U. Kunze, D. Reuter, A.D. Wieck, S.F. Fischer, Applied Physics Letters 98 (2011). date_created: 2019-02-14T10:32:36Z date_updated: 2022-01-06T07:03:45Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3563714 intvolume: ' 98' issue: '10' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Mode-filtered electron injection into a waveguide interferometer type: journal_article user_id: '42514' volume: 98 year: '2011' ... --- _id: '7711' article_number: '081911' author: - first_name: Y. S. full_name: Chen, Y. S. last_name: Chen - first_name: J. full_name: Huang, J. last_name: Huang - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: G. full_name: Bacher, G. last_name: Bacher citation: ama: Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics Letters. 2011;98(8). doi:10.1063/1.3553503 apa: Chen, Y. S., Huang, J., Reuter, D., Ludwig, A., Wieck, A. D., & Bacher, G. (2011). Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics Letters, 98(8). https://doi.org/10.1063/1.3553503 bibtex: '@article{Chen_Huang_Reuter_Ludwig_Wieck_Bacher_2011, title={Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil}, volume={98}, DOI={10.1063/1.3553503}, number={8081911}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Y. S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher, G.}, year={2011} }' chicago: Chen, Y. S., J. Huang, Dirk Reuter, A. Ludwig, A. D. Wieck, and G. Bacher. “Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.” Applied Physics Letters 98, no. 8 (2011). https://doi.org/10.1063/1.3553503. ieee: Y. S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil,” Applied Physics Letters, vol. 98, no. 8, 2011. mla: Chen, Y. S., et al. “Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.” Applied Physics Letters, vol. 98, no. 8, 081911, AIP Publishing, 2011, doi:10.1063/1.3553503. short: Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A.D. Wieck, G. Bacher, Applied Physics Letters 98 (2011). date_created: 2019-02-14T10:33:23Z date_updated: 2022-01-06T07:03:45Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3553503 intvolume: ' 98' issue: '8' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil type: journal_article user_id: '42514' volume: 98 year: '2011' ... --- _id: '7311' article_number: '051102' author: - first_name: Henning full_name: Soldat, Henning last_name: Soldat - first_name: Mingyuan full_name: Li, Mingyuan last_name: Li - first_name: Nils C. full_name: Gerhardt, Nils C. last_name: Gerhardt - first_name: Martin R. full_name: Hofmann, Martin R. last_name: Hofmann - first_name: Arne full_name: Ludwig, Arne last_name: Ludwig - first_name: Astrid full_name: Ebbing, Astrid last_name: Ebbing - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck - first_name: Frank full_name: Stromberg, Frank last_name: Stromberg - first_name: Werner full_name: Keune, Werner last_name: Keune - first_name: Heiko full_name: Wende, Heiko last_name: Wende citation: ama: Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662 apa: Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A., … Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting diodes. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3622662 bibtex: '@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et al._2011, title={Room temperature spin relaxation length in spin light-emitting diodes}, volume={99}, DOI={10.1063/1.3622662}, number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D. and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }' chicago: Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters 99, no. 5 (2011). https://doi.org/10.1063/1.3622662. ieee: H. Soldat et al., “Room temperature spin relaxation length in spin light-emitting diodes,” Applied Physics Letters, vol. 99, no. 5, 2011. mla: Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 99, no. 5, 051102, AIP Publishing, 2011, doi:10.1063/1.3622662. short: H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter, A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011). date_created: 2019-01-31T10:21:25Z date_updated: 2022-01-06T07:03:34Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3622662 intvolume: ' 99' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Room temperature spin relaxation length in spin light-emitting diodes type: journal_article user_id: '42514' volume: 99 year: '2011' ... --- _id: '39735' article_number: '241106' author: - first_name: Alexander full_name: Lorenz, Alexander last_name: Lorenz - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848 apa: Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters, 98(24), Article 241106. https://doi.org/10.1063/1.3599848 bibtex: '@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching in a photonic liquid crystal fiber}, volume={98}, DOI={10.1063/1.3599848}, number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }' chicago: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters 98, no. 24 (2011). https://doi.org/10.1063/1.3599848. ieee: 'A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no. 241106, 2011, doi: 10.1063/1.3599848.' mla: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters, vol. 98, no. 24, 241106, AIP Publishing, 2011, doi:10.1063/1.3599848. short: A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011). date_created: 2023-01-24T18:42:25Z date_updated: 2023-01-24T18:42:50Z department: - _id: '313' - _id: '230' - _id: '638' doi: 10.1063/1.3599848 intvolume: ' 98' issue: '24' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Efficient electro-optic switching in a photonic liquid crystal fiber type: journal_article user_id: '254' volume: 98 year: '2011' ... --- _id: '7975' article_number: '033111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445 apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445 bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445. ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010. mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445. short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010). date_created: 2019-02-21T13:32:39Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3293445 intvolume: ' 96' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy type: journal_article user_id: '42514' volume: 96 year: '2010' ... --- _id: '7980' article_number: '033111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445 apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445 bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445. ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010. mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445. short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010). date_created: 2019-02-21T14:13:43Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3293445 intvolume: ' 96' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy type: journal_article user_id: '42514' volume: 96 year: '2010' ... --- _id: '7982' article_number: '022110' author: - first_name: M. full_name: Csontos, M. last_name: Csontos - first_name: Y. full_name: Komijani, Y. last_name: Komijani - first_name: I. full_name: Shorubalko, I. last_name: Shorubalko - first_name: K. full_name: Ensslin, K. last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2). doi:10.1063/1.3463465 apa: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck, A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics Letters, 97(2). https://doi.org/10.1063/1.3463465 bibtex: '@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465}, number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465. ieee: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck, “Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters, vol. 97, no. 2, 2010. mla: Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465. short: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:33:40Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3463465 intvolume: ' 97' issue: '2' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nanostructures in p-GaAs with improved tunability type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '7983' article_number: '062112' author: - first_name: M. full_name: Wiemann, M. last_name: Wiemann - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922 apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010). Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters, 97(6). https://doi.org/10.1063/1.3475922 bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922}, number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters 97, no. 6 (2010). https://doi.org/10.1063/1.3475922. ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification based upon hot-electron thermopower,” Applied Physics Letters, vol. 97, no. 6, 2010. mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:10.1063/1.3475922. short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:34:50Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3475922 intvolume: ' 97' issue: '6' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Full-wave rectification based upon hot-electron thermopower type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '7990' article_number: '143101' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Michaelis de Vasconcellos, S. last_name: Michaelis de Vasconcellos - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: C. full_name: Meier, C. last_name: Meier citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }' chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812. ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010. mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:41:19Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3488812 intvolume: ' 97' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '4550' abstract: - lang: eng text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices. article_number: '143101' article_type: original author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Michaelis de Vasconcellos, S. last_name: Michaelis de Vasconcellos - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }' chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812. ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010. mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010). date_created: 2018-09-20T12:38:51Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1063/1.3488812 intvolume: ' 97' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode type: journal_article user_id: '20798' volume: 97 year: '2010' ... --- _id: '4194' abstract: - lang: eng text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements. article_number: '253501' article_type: original author: - first_name: E. full_name: Tschumak, E. last_name: Tschumak - first_name: R. full_name: Granzner, R. last_name: Granzner - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: F. full_name: Schwierz, F. last_name: Schwierz - first_name: K. full_name: Lischka, K. last_name: Lischka - first_name: H. full_name: Nagasawa, H. last_name: Nagasawa - first_name: M. full_name: Abe, M. last_name: Abe - first_name: Donald full_name: As, Donald last_name: As citation: ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066 apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066 bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }' chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010). https://doi.org/10.1063/1.3455066. ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol. 96, no. 25, 2010. mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066. short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010). date_created: 2018-08-28T11:56:08Z date_updated: 2022-01-06T07:00:33Z ddc: - '530' department: - _id: '15' - _id: '286' doi: 10.1063/1.3455066 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T11:58:27Z date_updated: 2018-08-28T11:58:27Z file_id: '4195' file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf file_size: 277385 relation: main_file success: 1 file_date_updated: 2018-08-28T11:58:27Z has_accepted_license: '1' intvolume: ' 96' issue: '25' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001) type: journal_article user_id: '55706' volume: 96 year: '2010' ... --- _id: '7973' article_number: '022107' author: - first_name: S. S. full_name: Buchholz, S. S. last_name: Buchholz - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009;94(2). doi:10.1063/1.3069281 apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281 bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281. ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, vol. 94, no. 2, 2009. mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107, AIP Publishing, 2009, doi:10.1063/1.3069281. short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009). date_created: 2019-02-21T13:28:29Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3069281 intvolume: ' 94' issue: '2' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring type: journal_article user_id: '42514' volume: 94 year: '2009' ... --- _id: '8579' article_number: '022107' author: - first_name: S. S. full_name: Buchholz, S. S. last_name: Buchholz - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009. doi:10.1063/1.3069281 apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281 bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281. ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, 2009. mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281. short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:34:37Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3069281 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring type: journal_article user_id: '42514' year: '2009' ... --- _id: '8580' article_number: '023107' author: - first_name: J. H. full_name: Blokland, J. H. last_name: Blokland - first_name: M. full_name: Bozkurt, M. last_name: Bozkurt - first_name: J. M. full_name: Ulloa, J. M. last_name: Ulloa - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: P. M. full_name: Koenraad, P. M. last_name: Koenraad - first_name: P. C. M. full_name: Christianen, P. C. M. last_name: Christianen - first_name: J. C. full_name: Maan, J. C. last_name: Maan citation: ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. 2009. doi:10.1063/1.3072366 apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad, P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366 bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={10.1063/1.3072366}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }' chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3072366. ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy,” Applied Physics Letters, 2009. mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009, doi:10.1063/1.3072366. short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009). date_created: 2019-03-26T08:42:07Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3072366 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy type: journal_article user_id: '42514' year: '2009' ... --- _id: '8585' article_number: '022113' author: - first_name: B. full_name: Marquardt, B. last_name: Marquardt - first_name: M. full_name: Geller, M. last_name: Geller - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724 apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.3175724 bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={10.1063/1.3175724}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3175724. ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” Applied Physics Letters, 2009. mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 022113, 2009, doi:10.1063/1.3175724. short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:55:40Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3175724 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots type: journal_article user_id: '42514' year: '2009' ... --- _id: '7640' article_number: '193111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: M. full_name: Offer, M. last_name: Offer - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: O. full_name: Wibbelhoff, O. last_name: Wibbelhoff - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439 apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439 bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }' chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439. ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008. mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439. short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008). date_created: 2019-02-13T11:30:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2920439 extern: '1' intvolume: ' 92' issue: '19' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy type: journal_article user_id: '20798' volume: 92 year: '2008' ... --- _id: '8603' article_number: '112111' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Y. full_name: Cordier, Y. last_name: Cordier - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968 bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968. ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008. mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968. short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:26:36Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2899968 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures type: journal_article user_id: '42514' year: '2008' ... --- _id: '8607' article_number: '241920' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: J. full_name: Nannen, J. last_name: Nannen - first_name: S. full_name: Halm, S. last_name: Halm - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: M. full_name: Wahle, M. last_name: Wahle - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279 apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279 bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008, title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}, DOI={10.1063/1.2943279}, number={241920}, journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2008} }' chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279. ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature,” Applied Physics Letters, 2008. mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279. short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:51:24Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2943279 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature type: journal_article user_id: '42514' year: '2008' ... --- _id: '8608' article_number: '242102' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: H. full_name: Wende, H. last_name: Wende - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2948856 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A. D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et al._2008, title={Electrical detection of photoinduced spins both at room temperature and in remanence}, DOI={10.1063/1.2948856}, number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856. ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at room temperature and in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:52:27Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2948856 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Electrical detection of photoinduced spins both at room temperature and in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '8609' article_number: '021117' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: H. full_name: Wende, H. last_name: Wende - first_name: W. full_name: Keune, W. last_name: Keune - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2957469 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469. ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:53:44Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2957469 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Room temperature electrical spin injection in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '39749' article_number: '131903' author: - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: S. A. full_name: Benning, S. A. last_name: Benning - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters. 2008;93(13). doi:10.1063/1.2990762 apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762 bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}, volume={93}, DOI={10.1063/1.2990762}, number={13131903}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762. ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns fixed by photopolymerization of dissipative structures,” Applied Physics Letters, vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.' mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903, AIP Publishing, 2008, doi:10.1063/1.2990762. short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:52:43Z date_updated: 2023-01-24T18:53:04Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2990762 intvolume: ' 93' issue: '13' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Submicrometer periodic patterns fixed by photopolymerization of dissipative structures type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '39751' article_number: '183304' author: - first_name: Andreas full_name: Redler, Andreas last_name: Redler - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18). doi:10.1063/1.3021364 apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters, 93(18), Article 183304. https://doi.org/10.1063/1.3021364 bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364}, number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364. ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal,” Applied Physics Letters, vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.' mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364. short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:53:20Z date_updated: 2023-01-24T18:53:34Z department: - _id: '313' - _id: '638' doi: 10.1063/1.3021364 intvolume: ' 93' issue: '18' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '26076' article_number: '151109' author: - first_name: Xiao-Feng full_name: Han, Xiao-Feng last_name: Han - first_name: Yu-Xiang full_name: Weng, Yu-Xiang last_name: Weng - first_name: Rui full_name: Wang, Rui last_name: Wang - first_name: Xi-Hao full_name: Chen, Xi-Hao last_name: Chen - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu - first_name: Jimin full_name: Zhao, Jimin last_name: Zhao citation: ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540 apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., & Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540 bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level ultrafast all-optical switching}, DOI={10.1063/1.2909540}, number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}, year={2008} }' chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2909540. ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,” Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.' mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540. short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao, Applied Physics Letters (2008). date_created: 2021-10-12T08:46:00Z date_updated: 2023-01-26T10:08:30Z doi: 10.1063/1.2909540 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-photon level ultrafast all-optical switching type: journal_article user_id: '36389' year: '2008' ... --- _id: '1761' article_number: '151109' author: - first_name: Carsten full_name: Rockstuhl, Carsten last_name: Rockstuhl - first_name: Falk full_name: Lederer, Falk last_name: Lederer - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Harald full_name: Giessen, Harald last_name: Giessen citation: ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters. 2007;91(15). doi:10.1063/1.2799240 apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters, 91(15). https://doi.org/10.1063/1.2799240 bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }' chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240. ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics Letters, vol. 91, no. 15, 2007. mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no. 15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240. short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters 91 (2007). date_created: 2018-03-23T13:07:38Z date_updated: 2022-01-06T06:53:16Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2799240 intvolume: ' 91' issue: '15' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays type: journal_article user_id: '30525' volume: 91 year: '2007' ... --- _id: '7644' article_number: '143113' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy citation: ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612 apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612 bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612}, number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }' chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14 (2007). https://doi.org/10.1063/1.2719612. ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007. mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113, AIP Publishing, 2007, doi:10.1063/1.2719612. short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007). date_created: 2019-02-13T11:34:33Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2719612 extern: '1' intvolume: ' 90' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Technique for tilting GaAs photonic crystal nanocavities out of plane type: journal_article user_id: '20798' volume: 90 year: '2007' ... --- _id: '8630' article_number: '262505' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: V. full_name: Ney, V. last_name: Ney - first_name: T. full_name: Kammermeier, T. last_name: Kammermeier - first_name: A. full_name: Ney, A. last_name: Ney - first_name: J. full_name: Schörmann, J. last_name: Schörmann - first_name: S. full_name: Potthast, S. last_name: Potthast - first_name: D. J. full_name: As, D. J. last_name: As - first_name: K. full_name: Lischka, K. last_name: Lischka citation: ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113 bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={10.1063/1.2753113}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113. ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” Applied Physics Letters, 2007. mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113. short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007). date_created: 2019-03-26T10:23:42Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2753113 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetic and structural properties of Gd-implanted zinc-blende GaN type: journal_article user_id: '42514' year: '2007' ... --- _id: '8632' article_number: '123108' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. full_name: Remhof, A. last_name: Remhof citation: ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836 apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.2786836 bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }' chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836. ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” Applied Physics Letters, 2007. mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836. short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007). date_created: 2019-03-26T10:26:08Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2786836 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Focused ion beam implantation induced site-selective growth of InAs quantum dots type: journal_article user_id: '42514' year: '2007' ... --- _id: '25986' abstract: - lang: eng text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support." article_number: '123108' article_type: original author: - first_name: T. full_name: Waitz, T. last_name: Waitz - first_name: Michael full_name: Tiemann, Michael id: '23547' last_name: Tiemann orcid: 0000-0003-1711-2722 - first_name: P. J. full_name: Klar, P. J. last_name: Klar - first_name: J. full_name: Sann, J. last_name: Sann - first_name: J. full_name: Stehr, J. last_name: Stehr - first_name: B. K. full_name: Meyer, B. K. last_name: Meyer citation: ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters. Published online 2007. doi:10.1063/1.2713872 apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872 bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }' chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2713872. ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.' mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872. short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007). date_created: 2021-10-09T09:40:39Z date_updated: 2023-03-09T08:49:01Z department: - _id: '35' - _id: '2' - _id: '307' doi: 10.1063/1.2713872 extern: '1' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published quality_controlled: '1' status: public title: Crystalline ZnO with an enhanced surface area obtained by nanocasting type: journal_article user_id: '23547' year: '2007' ... --- _id: '39561' article_number: '013501' author: - first_name: M. full_name: Scharnberg, M. last_name: Scharnberg - first_name: V. full_name: Zaporojtchenko, V. last_name: Zaporojtchenko - first_name: R. full_name: Adelung, R. last_name: Adelung - first_name: F. full_name: Faupel, F. last_name: Faupel - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: T. full_name: Diekmann, T. last_name: Diekmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926 apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926 bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }' chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926. ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” Applied Physics Letters, vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.' mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926. short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007). date_created: 2023-01-24T12:15:22Z date_updated: 2023-03-21T10:15:06Z department: - _id: '59' doi: 10.1063/1.2426926 intvolume: ' 90' issue: '1' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer type: journal_article user_id: '20179' volume: 90 year: '2007' ... --- _id: '7651' article_number: '031111' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy - first_name: Elaine D. full_name: Haberer, Elaine D. last_name: Haberer - first_name: Rajat full_name: Sharma, Rajat last_name: Sharma - first_name: Yong-Seok full_name: Choi, Yong-Seok last_name: Choi - first_name: Kelly full_name: McGroddy, Kelly last_name: McGroddy - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: Evelyn L. full_name: Hu, Evelyn L. last_name: Hu citation: ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3). doi:10.1063/1.2166680 apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680 bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={10.1063/1.2166680}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }' chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680. ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006. mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:10.1063/1.2166680. short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006). date_created: 2019-02-13T11:41:17Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2166680 extern: '1' intvolume: ' 88' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Visible resonant modes in GaN-based photonic crystal membrane cavities type: journal_article user_id: '20798' volume: 88 year: '2006' ... --- _id: '8648' article_number: '082110' author: - first_name: M. full_name: Knop, M. last_name: Knop - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618 apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. https://doi.org/10.1063/1.2179618 bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2179618. ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006. mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618. short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T07:54:36Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2179618 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ballistic rectification in an asymmetric mesoscopic cross junction type: journal_article user_id: '42514' year: '2006' ... --- _id: '8654' article_number: '121115' author: - first_name: R. full_name: Schmidt, R. last_name: Schmidt - first_name: U. full_name: Scholz, U. last_name: Scholz - first_name: M. full_name: Vitzethum, M. last_name: Vitzethum - first_name: R. full_name: Fix, R. last_name: Fix - first_name: C. full_name: Metzner, C. last_name: Metzner - first_name: P. full_name: Kailuweit, P. last_name: Kailuweit - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Wieck, A. last_name: Wieck - first_name: M. C. full_name: Hübner, M. C. last_name: Hübner - first_name: S. full_name: Stufler, S. last_name: Stufler - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: S. full_name: Malzer, S. last_name: Malzer - first_name: G. H. full_name: Döhler, G. H. last_name: Döhler citation: ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057 apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057 bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={10.1063/1.2188057}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }' chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057. ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting diodes,” Applied Physics Letters, 2006. mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057. short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006). date_created: 2019-03-27T08:21:39Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2188057 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Fabrication of genuine single-quantum-dot light-emitting diodes type: journal_article user_id: '42514' year: '2006' ... --- _id: '8665' article_number: '123105' author: - first_name: V. full_name: Stavarache, V. last_name: Stavarache - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: M. full_name: Schwab, M. last_name: Schwab - first_name: D. R. full_name: Yakovlev, D. R. last_name: Yakovlev - first_name: R. full_name: Oulton, R. last_name: Oulton - first_name: M. full_name: Bayer, M. last_name: Bayer citation: ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233 apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton, R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233 bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233}, number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R. and Bayer, M.}, year={2006} }' chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233. ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric fields,” Applied Physics Letters, 2006. mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233. short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton, M. Bayer, Applied Physics Letters (2006). date_created: 2019-03-27T08:39:57Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2345233 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Control of quantum dot excitons by lateral electric fields type: journal_article user_id: '42514' year: '2006' ... --- _id: '8671' article_number: '231101' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909 apa: Hohage, P. E., Bacher, G., Reuter, D., & Wieck, A. D. (2006). Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2398909 bibtex: '@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations in bulk GaAs at room temperature}, DOI={10.1063/1.2398909}, number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2398909. ieee: P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations in bulk GaAs at room temperature,” Applied Physics Letters, 2006. mla: Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters, 231101, 2006, doi:10.1063/1.2398909. short: P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T09:15:03Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2398909 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin oscillations in bulk GaAs at room temperature type: journal_article user_id: '42514' year: '2006' ... --- _id: '29684' article_number: '012502' author: - first_name: Andy full_name: Thomas, Andy last_name: Thomas - first_name: Dirk full_name: Meyners, Dirk last_name: Meyners - first_name: Daniel full_name: Ebke, Daniel last_name: Ebke - first_name: Ning-Ning full_name: Liu, Ning-Ning last_name: Liu - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: Jan full_name: Schmalhorst, Jan last_name: Schmalhorst - first_name: Günter full_name: Reiss, Günter last_name: Reiss - first_name: Hubert full_name: Ebert, Hubert last_name: Ebert - first_name: Andreas full_name: Hütten, Andreas last_name: Hütten citation: ama: Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333 apa: Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J., Reiss, G., Ebert, H., & Hütten, A. (2006). Inverted spin polarization of Heusler alloys for spintronic devices. Applied Physics Letters, 89(1), Article 012502. https://doi.org/10.1063/1.2219333 bibtex: '@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006, title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89}, DOI={10.1063/1.2219333}, number={1012502}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas, Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006} }' chicago: Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization of Heusler Alloys for Spintronic Devices.” Applied Physics Letters 89, no. 1 (2006). https://doi.org/10.1063/1.2219333. ieee: 'A. Thomas et al., “Inverted spin polarization of Heusler alloys for spintronic devices,” Applied Physics Letters, vol. 89, no. 1, Art. no. 012502, 2006, doi: 10.1063/1.2219333.' mla: Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic Devices.” Applied Physics Letters, vol. 89, no. 1, 012502, AIP Publishing, 2006, doi:10.1063/1.2219333. short: A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G. Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006). date_created: 2022-01-31T10:16:33Z date_updated: 2022-01-31T10:16:56Z department: - _id: '15' - _id: '576' doi: 10.1063/1.2219333 extern: '1' intvolume: ' 89' issue: '1' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Inverted spin polarization of Heusler alloys for spintronic devices type: journal_article user_id: '26883' volume: 89 year: '2006' ... --- _id: '7653' article_number: '243101' author: - first_name: Y.-S. full_name: Choi, Y.-S. last_name: Choi - first_name: K. full_name: Hennessy, K. last_name: Hennessy - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: E. full_name: Haberer, E. last_name: Haberer - first_name: Y. full_name: Gao, Y. last_name: Gao - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: E. L. full_name: Hu, E. L. last_name: Hu - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713 apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P., … Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied Physics Letters, 87(24). https://doi.org/10.1063/1.2147713 bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005, title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }' chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713. ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,” Applied Physics Letters, vol. 87, no. 24, 2005. mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713. short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:47:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2147713 extern: '1' intvolume: ' 87' issue: '24' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: GaN blue photonic crystal membrane nanocavities type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7654' article_number: '163117' author: - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192 apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters, 87(16). https://doi.org/10.1063/1.2112192 bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, volume={87}, DOI={10.1063/1.2112192}, number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005). https://doi.org/10.1063/1.2112192. ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, vol. 87, no. 16, 2005. mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192. short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:48:22Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2112192 extern: '1' intvolume: ' 87' issue: '16' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7655' article_number: '101107' author: - first_name: A. full_name: David, A. last_name: David - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: F. S. full_name: Diana, F. S. last_name: Diana - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: E. full_name: Hu, E. last_name: Hu - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: C. full_name: Weisbuch, C. last_name: Weisbuch - first_name: H. full_name: Benisty, H. last_name: Benisty citation: ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters. 2005;87(10). doi:10.1063/1.2039987 apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., … Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters, 87(10). https://doi.org/10.1063/1.2039987 bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005, title={Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}, volume={87}, DOI={10.1063/1.2039987}, number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005} }' chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters 87, no. 10 (2005). https://doi.org/10.1063/1.2039987. ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” Applied Physics Letters, vol. 87, no. 10, 2005. mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87, no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987. short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:48:57Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2039987 extern: '1' intvolume: ' 87' issue: '10' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7656' article_number: '051107' author: - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: E. D. full_name: Haberer, E. D. last_name: Haberer - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: E. L. full_name: Hu, E. L. last_name: Hu - first_name: S. full_name: Nakamura, S. last_name: Nakamura citation: ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380 apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005). Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters, 87(5). https://doi.org/10.1063/1.2008380 bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380}, number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}, year={2005} }' chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters 87, no. 5 (2005). https://doi.org/10.1063/1.2008380. ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” Applied Physics Letters, vol. 87, no. 5, 2005. mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005, doi:10.1063/1.2008380. short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:50:37Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2008380 extern: '1' intvolume: ' 87' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7659' article_number: '031901' author: - first_name: Arpan full_name: Chakraborty, Arpan last_name: Chakraborty - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Benjamin A. full_name: Haskell, Benjamin A. last_name: Haskell - first_name: Salka full_name: Keller, Salka last_name: Keller - first_name: Patrick full_name: Waltereit, Patrick last_name: Waltereit - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: James S. full_name: Speck, James S. last_name: Speck - first_name: Umesh K. full_name: Mishra, Umesh K. last_name: Mishra citation: ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1851007 apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters, 86(3). https://doi.org/10.1063/1.1851007 bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }' chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007. ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied Physics Letters, vol. 86, no. 3, 2005. mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007. short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86 (2005). date_created: 2019-02-13T12:27:05Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1851007 extern: '1' intvolume: ' 86' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN type: journal_article user_id: '20798' volume: 86 year: '2005' ... --- _id: '8679' article_number: '162110' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C. full_name: Werner, C. last_name: Werner - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Petrosyan, S. last_name: Petrosyan citation: ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829 apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. https://doi.org/10.1063/1.1897829 bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829}, number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner, C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }' chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.1897829. ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005. mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829. short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005). date_created: 2019-03-27T09:32:08Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1897829 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Depletion characteristics of two-dimensional lateral p‐n-junctions type: journal_article user_id: '42514' year: '2005' ... --- _id: '8683' article_number: '042104' author: - first_name: T. full_name: Müller, T. last_name: Müller - first_name: A. full_name: Würtz, A. last_name: Würtz - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. 2005. doi:10.1063/1.2001740 apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. https://doi.org/10.1063/1.2001740 bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104}, journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }' chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740. ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling using a driven electron ratchet in a two-dimensional electron system,” Applied Physics Letters, 2005. mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005, doi:10.1063/1.2001740. short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T10:19:20Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2001740 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron system type: journal_article user_id: '42514' year: '2005' ... --- _id: '8685' article_number: '032502' author: - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: C. full_name: Brenner, C. last_name: Brenner - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843 apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters. https://doi.org/10.1063/1.1996843 bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005, title={Electron spin injection into GaAs from ferromagnetic contacts in remanence}, DOI={10.1063/1.1996843}, number={032502}, journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Westerholt, K.}, year={2005} }' chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.1996843. ieee: N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic contacts in remanence,” Applied Physics Letters, 2005. mla: Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters, 032502, 2005, doi:10.1063/1.1996843. short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005). date_created: 2019-03-27T10:21:16Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1996843 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Electron spin injection into GaAs from ferromagnetic contacts in remanence type: journal_article user_id: '42514' year: '2005' ... --- _id: '8690' article_number: '163117' author: - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Cedrik full_name: Meier, Cedrik last_name: Meier - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005. doi:10.1063/1.2112192 apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192 bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, DOI={10.1063/1.2112192}, number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192. ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, 2005. mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, 163117, 2005, doi:10.1063/1.2112192. short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T10:39:18Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2112192 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra type: journal_article user_id: '42514' year: '2005' ... --- _id: '8691' article_number: '232108' author: - first_name: Boris full_name: Grbić, Boris last_name: Grbić - first_name: Renaud full_name: Leturcq, Renaud last_name: Leturcq - first_name: Klaus full_name: Ensslin, Klaus last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994 apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005). Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. https://doi.org/10.1063/1.2139994 bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994}, number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D. Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2139994. ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters, 2005. mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994. short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T11:12:28Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2139994 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures type: journal_article user_id: '42514' year: '2005' ... --- _id: '29691' article_number: '152102' author: - first_name: V. full_name: Höink, V. last_name: Höink - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: D. full_name: Engel, D. last_name: Engel - first_name: D. full_name: Junk, D. last_name: Junk - first_name: A. full_name: Ehresmann, A. last_name: Ehresmann citation: ama: Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. Applied Physics Letters. 2005;86(15). doi:10.1063/1.1899771 apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., & Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. Applied Physics Letters, 86(15), Article 152102. https://doi.org/10.1063/1.1899771 bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86}, DOI={10.1063/1.1899771}, number={15152102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk, D. and Ehresmann, A.}, year={2005} }' chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified Exchange Bias.” Applied Physics Letters 86, no. 15 (2005). https://doi.org/10.1063/1.1899771. ieee: 'V. Höink et al., “Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias,” Applied Physics Letters, vol. 86, no. 15, Art. no. 152102, 2005, doi: 10.1063/1.1899771.' mla: Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified Exchange Bias.” Applied Physics Letters, vol. 86, no. 15, 152102, AIP Publishing, 2005, doi:10.1063/1.1899771. short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann, Applied Physics Letters 86 (2005). date_created: 2022-01-31T10:21:57Z date_updated: 2022-01-31T10:22:19Z department: - _id: '15' - _id: '576' doi: 10.1063/1.1899771 extern: '1' intvolume: ' 86' issue: '15' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias type: journal_article user_id: '26883' volume: 86 year: '2005' ... --- _id: '39764' article_number: '241105' author: - first_name: Heinrich full_name: Matthias, Heinrich last_name: Matthias - first_name: Thorsten full_name: Röder, Thorsten last_name: Röder - first_name: Ralf B. full_name: Wehrspohn, Ralf B. last_name: Wehrspohn - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: Sven full_name: Matthias, Sven last_name: Matthias - first_name: Stephen J. full_name: Picken, Stephen J. last_name: Picken citation: ama: Matthias H, Röder T, Wehrspohn RB, Kitzerow H-S, Matthias S, Picken SJ. Spatially periodic liquid crystal director field appearing in a photonic crystal template. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2142100 apa: Matthias, H., Röder, T., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., & Picken, S. J. (2005). Spatially periodic liquid crystal director field appearing in a photonic crystal template. Applied Physics Letters, 87(24), Article 241105. https://doi.org/10.1063/1.2142100 bibtex: '@article{Matthias_Röder_Wehrspohn_Kitzerow_Matthias_Picken_2005, title={Spatially periodic liquid crystal director field appearing in a photonic crystal template}, volume={87}, DOI={10.1063/1.2142100}, number={24241105}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow, Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}, year={2005} }' chicago: Matthias, Heinrich, Thorsten Röder, Ralf B. Wehrspohn, Heinz-Siegfried Kitzerow, Sven Matthias, and Stephen J. Picken. “Spatially Periodic Liquid Crystal Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2142100. ieee: 'H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and S. J. Picken, “Spatially periodic liquid crystal director field appearing in a photonic crystal template,” Applied Physics Letters, vol. 87, no. 24, Art. no. 241105, 2005, doi: 10.1063/1.2142100.' mla: Matthias, Heinrich, et al. “Spatially Periodic Liquid Crystal Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters, vol. 87, no. 24, 241105, AIP Publishing, 2005, doi:10.1063/1.2142100. short: H. Matthias, T. Röder, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, S.J. Picken, Applied Physics Letters 87 (2005). date_created: 2023-01-24T19:10:38Z date_updated: 2023-01-24T19:11:03Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2142100 intvolume: ' 87' issue: '24' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Spatially periodic liquid crystal director field appearing in a photonic crystal template type: journal_article user_id: '254' volume: 87 year: '2005' ... --- _id: '39767' article_number: '241108' author: - first_name: G. full_name: Mertens, G. last_name: Mertens - first_name: R. B. full_name: Wehrspohn, R. B. last_name: Wehrspohn - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: S. full_name: Matthias, S. last_name: Matthias - first_name: C. full_name: Jamois, C. last_name: Jamois - first_name: U. full_name: Gösele, U. last_name: Gösele citation: ama: Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable defect mode in a three-dimensional photonic crystal. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2139846 apa: Mertens, G., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., Jamois, C., & Gösele, U. (2005). Tunable defect mode in a three-dimensional photonic crystal. Applied Physics Letters, 87(24), Article 241108. https://doi.org/10.1063/1.2139846 bibtex: '@article{Mertens_Wehrspohn_Kitzerow_Matthias_Jamois_Gösele_2005, title={Tunable defect mode in a three-dimensional photonic crystal}, volume={87}, DOI={10.1063/1.2139846}, number={24241108}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias, S. and Jamois, C. and Gösele, U.}, year={2005} }' chicago: Mertens, G., R. B. Wehrspohn, Heinz-Siegfried Kitzerow, S. Matthias, C. Jamois, and U. Gösele. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2139846. ieee: 'G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,” Applied Physics Letters, vol. 87, no. 24, Art. no. 241108, 2005, doi: 10.1063/1.2139846.' mla: Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” Applied Physics Letters, vol. 87, no. 24, 241108, AIP Publishing, 2005, doi:10.1063/1.2139846. short: G. Mertens, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, U. Gösele, Applied Physics Letters 87 (2005). date_created: 2023-01-24T19:12:37Z date_updated: 2023-01-24T19:13:14Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2139846 intvolume: ' 87' issue: '24' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Tunable defect mode in a three-dimensional photonic crystal type: journal_article user_id: '254' volume: 87 year: '2005' ... --- _id: '39768' article_number: '031104' author: - first_name: Lutz full_name: Paelke, Lutz last_name: Paelke - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: Peter full_name: Strohriegl, Peter last_name: Strohriegl citation: ama: Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1852082 apa: Paelke, L., Kitzerow, H.-S., & Strohriegl, P. (2005). Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters, 86(3), Article 031104. https://doi.org/10.1063/1.1852082 bibtex: '@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={10.1063/1.1852082}, number={3031104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }' chicago: Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1852082. ieee: 'L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” Applied Physics Letters, vol. 86, no. 3, Art. no. 031104, 2005, doi: 10.1063/1.1852082.' mla: Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied Physics Letters, vol. 86, no. 3, 031104, AIP Publishing, 2005, doi:10.1063/1.1852082. short: L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005). date_created: 2023-01-24T19:13:33Z date_updated: 2023-01-24T19:13:50Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1852082 intvolume: ' 86' issue: '3' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane type: journal_article user_id: '254' volume: 86 year: '2005' ... --- _id: '23507' abstract: - lang: eng text: "A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n⁠." article_number: '261109' author: - first_name: C. full_name: Schlichenmaier, C. last_name: Schlichenmaier - first_name: A. full_name: Thränhardt, A. last_name: Thränhardt - first_name: Torsten full_name: Meier, Torsten id: '344' last_name: Meier orcid: 0000-0001-8864-2072 - first_name: S. W. full_name: Koch, S. W. last_name: Koch - first_name: W. W. full_name: Chow, W. W. last_name: Chow - first_name: J. full_name: Hader, J. last_name: Hader - first_name: J. V. full_name: Moloney, J. V. last_name: Moloney citation: ama: Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters. 2005;87(26). doi:10.1063/1.2149371 apa: Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article 261109. https://doi.org/10.1063/1.2149371 bibtex: '@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={10.1063/1.2149371}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }' chicago: Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005). https://doi.org/10.1063/1.2149371. ieee: 'C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol. 87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.' mla: Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109, 2005, doi:10.1063/1.2149371. short: C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005). date_created: 2021-08-24T09:29:41Z date_updated: 2023-04-24T06:00:23Z department: - _id: '15' - _id: '170' - _id: '293' doi: 10.1063/1.2149371 extern: '1' intvolume: ' 87' issue: '26' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range type: journal_article user_id: '49063' volume: 87 year: '2005' ... --- _id: '39574' article_number: '024104' author: - first_name: M. full_name: Scharnberg, M. last_name: Scharnberg - first_name: J. full_name: Hu, J. last_name: Hu - first_name: J. full_name: Kanzow, J. last_name: Kanzow - first_name: K. full_name: Rätzke, K. last_name: Rätzke - first_name: R. full_name: Adelung, R. last_name: Adelung - first_name: F. full_name: Faupel, F. last_name: Faupel - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: S. full_name: Meyer, S. last_name: Meyer - first_name: J. full_name: Pflaum, J. last_name: Pflaum citation: ama: Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845 apa: Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters, 86(2), Article 024104. https://doi.org/10.1063/1.1849845 bibtex: '@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={10.1063/1.1849845}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }' chicago: Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied Physics Letters 86, no. 2 (2005). https://doi.org/10.1063/1.1849845. ieee: 'M. Scharnberg et al., “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845.' mla: Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied Physics Letters, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:10.1063/1.1849845. short: M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005). date_created: 2023-01-24T12:21:59Z date_updated: 2023-03-22T10:34:05Z department: - _id: '59' doi: 10.1063/1.1849845 intvolume: ' 86' issue: '2' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics type: journal_article user_id: '20179' volume: 86 year: '2005' ... --- _id: '7678' author: - first_name: E. D. full_name: Haberer, E. D. last_name: Haberer - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: A. R. full_name: Stonas, A. R. last_name: Stonas - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: E. L. full_name: Hu, E. L. last_name: Hu citation: ama: Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. Applied Physics Letters. 2004;85(22):5179-5181. doi:10.1063/1.1829167 apa: Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars, S. P., & Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. Applied Physics Letters, 85(22), 5179–5181. https://doi.org/10.1063/1.1829167 bibtex: '@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}, volume={85}, DOI={10.1063/1.1829167}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }' chicago: 'Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S. P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters 85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.' ieee: E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching,” Applied Physics Letters, vol. 85, no. 22, pp. 5179–5181, 2004. mla: Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters, vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167. short: E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181. date_created: 2019-02-13T14:47:45Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1829167 extern: '1' intvolume: ' 85' issue: '22' language: - iso: eng page: 5179-5181 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching type: journal_article user_id: '20798' volume: 85 year: '2004' ... --- _id: '8696' author: - first_name: S. full_name: Petrosyan, S. last_name: Petrosyan - first_name: A. full_name: Yesayan, A. last_name: Yesayan - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316 apa: Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315. https://doi.org/10.1063/1.1736316 bibtex: '@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded two-dimensional p–n junction}, DOI={10.1063/1.1736316}, journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }' chicago: Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15. https://doi.org/10.1063/1.1736316. ieee: S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315, 2004. mla: Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316. short: S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 3313–3315. date_created: 2019-03-27T11:43:00Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1736316 language: - iso: eng page: 3313-3315 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: The linearly graded two-dimensional p–n junction type: journal_article user_id: '42514' year: '2004' ... --- _id: '8711' author: - first_name: B. full_name: Grbić, B. last_name: Grbić - first_name: C. full_name: Ellenberger, C. last_name: Ellenberger - first_name: T. full_name: Ihn, T. last_name: Ihn - first_name: K. full_name: Ensslin, K. last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279. doi:10.1063/1.1781750 apa: Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck, A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750 bibtex: '@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750}, journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279} }' chicago: Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, 2277–79. https://doi.org/10.1063/1.1781750. ieee: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters, pp. 2277–2279, 2004. mla: Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750. short: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 2277–2279. date_created: 2019-03-27T12:21:18Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1781750 language: - iso: eng page: 2277-2279 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetotransport in C-doped AlGaAs heterostructures type: journal_article user_id: '42514' year: '2004' ... --- _id: '23514' abstract: - lang: eng text: A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters. author: - first_name: A. full_name: Thränhardt, A. last_name: Thränhardt - first_name: S. full_name: Becker, S. last_name: Becker - first_name: C. full_name: Schlichenmaier, C. last_name: Schlichenmaier - first_name: I. full_name: Kuznetsova, I. last_name: Kuznetsova - first_name: Torsten full_name: Meier, Torsten id: '344' last_name: Meier orcid: 0000-0001-8864-2072 - first_name: S. W. full_name: Koch, S. W. last_name: Koch - first_name: J. full_name: Hader, J. last_name: Hader - first_name: J. V. full_name: Moloney, J. V. last_name: Moloney - first_name: W. W. full_name: Chow, W. W. last_name: Chow citation: ama: Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters. 2004;85(23):5526-5528. doi:10.1063/1.1831570 apa: Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2004). Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters, 85(23), 5526–5528. https://doi.org/10.1063/1.1831570 bibtex: '@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004, title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85}, DOI={10.1063/1.1831570}, number={23}, journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier, C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney, J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }' chicago: 'Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters 85, no. 23 (2004): 5526–28. https://doi.org/10.1063/1.1831570.' ieee: 'A. Thränhardt et al., “Nonequilibrium gain in optically pumped GaInNAs laser structures,” Applied Physics Letters, vol. 85, no. 23, pp. 5526–5528, 2004, doi: 10.1063/1.1831570.' mla: Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters, vol. 85, no. 23, 2004, pp. 5526–28, doi:10.1063/1.1831570. short: A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528. date_created: 2021-08-24T09:46:22Z date_updated: 2023-04-24T06:23:26Z department: - _id: '15' - _id: '170' - _id: '293' doi: 10.1063/1.1831570 extern: '1' intvolume: ' 85' issue: '23' language: - iso: eng page: 5526-5528 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Nonequilibrium gain in optically pumped GaInNAs laser structures type: journal_article user_id: '49063' volume: 85 year: '2004' ... --- _id: '7683' author: - first_name: D. full_name: Reuter, D. last_name: Reuter - first_name: C. full_name: Riedesel, C. last_name: Riedesel - first_name: P. full_name: Schafmeister, P. last_name: Schafmeister - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925 apa: Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003). Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925 bibtex: '@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter, D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.}, year={2003}, pages={481–483} }' chicago: 'Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.' ieee: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs,” Applied Physics Letters, vol. 82, no. 3, pp. 481–483, 2003. mla: Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters, vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925. short: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics Letters 82 (2003) 481–483. date_created: 2019-02-13T14:51:34Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1539925 extern: '1' intvolume: ' 82' issue: '3' language: - iso: eng page: 481-483 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs type: journal_article user_id: '20798' volume: 82 year: '2003' ... --- _id: '8723' author: - first_name: B. Roldan full_name: Cuenya, B. Roldan last_name: Cuenya - first_name: M. full_name: Doi, M. last_name: Doi - first_name: W. full_name: Keune, W. last_name: Keune - first_name: S. full_name: Hoch, S. last_name: Hoch - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Wieck, A. last_name: Wieck - first_name: T. full_name: Schmitte, T. last_name: Schmitte - first_name: H. full_name: Zabel, H. last_name: Zabel citation: ama: Cuenya BR, Doi M, Keune W, et al. Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied Physics Letters. 2003:1072-1074. doi:10.1063/1.1542934 apa: Cuenya, B. R., Doi, M., Keune, W., Hoch, S., Reuter, D., Wieck, A., … Zabel, H. (2003). Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied Physics Letters, 1072–1074. https://doi.org/10.1063/1.1542934 bibtex: '@article{Cuenya_Doi_Keune_Hoch_Reuter_Wieck_Schmitte_Zabel_2003, title={Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures}, DOI={10.1063/1.1542934}, journal={Applied Physics Letters}, author={Cuenya, B. Roldan and Doi, M. and Keune, W. and Hoch, S. and Reuter, Dirk and Wieck, A. and Schmitte, T. and Zabel, H.}, year={2003}, pages={1072–1074} }' chicago: Cuenya, B. Roldan, M. Doi, W. Keune, S. Hoch, Dirk Reuter, A. Wieck, T. Schmitte, and H. Zabel. “Magnetism and Interface Properties of Epitaxial Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.” Applied Physics Letters, 2003, 1072–74. https://doi.org/10.1063/1.1542934. ieee: B. R. Cuenya et al., “Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures,” Applied Physics Letters, pp. 1072–1074, 2003. mla: Cuenya, B. Roldan, et al. “Magnetism and Interface Properties of Epitaxial Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.” Applied Physics Letters, 2003, pp. 1072–74, doi:10.1063/1.1542934. short: B.R. Cuenya, M. Doi, W. Keune, S. Hoch, D. Reuter, A. Wieck, T. Schmitte, H. Zabel, Applied Physics Letters (2003) 1072–1074. date_created: 2019-03-28T14:59:02Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1542934 language: - iso: eng page: 1072-1074 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures type: journal_article user_id: '42514' year: '2003' ... --- _id: '4288' abstract: - lang: eng text: "We report the experimental observation and the theoretical modeling of self-induced-transparency\r\nsignatures such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond pulse\r\npropagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance with the excitonic\r\nground-state transition at 10 K. The measurements were obtained by using a cross-correlation\r\nfrequency-resolved optical gating technique which allows us to retrieve the field amplitude of the\r\npropagating pulses." article_type: original author: - first_name: S. full_name: Schneider, S. last_name: Schneider - first_name: P. full_name: Borri, P. last_name: Borri - first_name: W. full_name: Langbein, W. last_name: Langbein - first_name: U. full_name: Woggon, U. last_name: Woggon - first_name: Jens full_name: Förstner, Jens id: '158' last_name: Förstner orcid: 0000-0001-7059-9862 - first_name: A. full_name: Knorr, A. last_name: Knorr - first_name: R. L. full_name: Sellin, R. L. last_name: Sellin - first_name: D. full_name: Ouyang, D. last_name: Ouyang - first_name: D. full_name: Bimberg, D. last_name: Bimberg citation: ama: Schneider S, Borri P, Langbein W, et al. Self-induced transparency in InGaAs quantum-dot waveguides. Applied Physics Letters. 2003;83(18):3668-3670. doi:10.1063/1.1624492 apa: Schneider, S., Borri, P., Langbein, W., Woggon, U., Förstner, J., Knorr, A., … Bimberg, D. (2003). Self-induced transparency in InGaAs quantum-dot waveguides. Applied Physics Letters, 83(18), 3668–3670. https://doi.org/10.1063/1.1624492 bibtex: '@article{Schneider_Borri_Langbein_Woggon_Förstner_Knorr_Sellin_Ouyang_Bimberg_2003, title={Self-induced transparency in InGaAs quantum-dot waveguides}, volume={83}, DOI={10.1063/1.1624492}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schneider, S. and Borri, P. and Langbein, W. and Woggon, U. and Förstner, Jens and Knorr, A. and Sellin, R. L. and Ouyang, D. and Bimberg, D.}, year={2003}, pages={3668–3670} }' chicago: 'Schneider, S., P. Borri, W. Langbein, U. Woggon, Jens Förstner, A. Knorr, R. L. Sellin, D. Ouyang, and D. Bimberg. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” Applied Physics Letters 83, no. 18 (2003): 3668–70. https://doi.org/10.1063/1.1624492.' ieee: S. Schneider et al., “Self-induced transparency in InGaAs quantum-dot waveguides,” Applied Physics Letters, vol. 83, no. 18, pp. 3668–3670, 2003. mla: Schneider, S., et al. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.” Applied Physics Letters, vol. 83, no. 18, AIP Publishing, 2003, pp. 3668–70, doi:10.1063/1.1624492. short: S. Schneider, P. Borri, W. Langbein, U. Woggon, J. Förstner, A. Knorr, R.L. Sellin, D. Ouyang, D. Bimberg, Applied Physics Letters 83 (2003) 3668–3670. date_created: 2018-08-30T07:41:02Z date_updated: 2022-01-06T07:00:48Z ddc: - '530' doi: 10.1063/1.1624492 extern: '1' file: - access_level: open_access content_type: application/pdf creator: hclaudia date_created: 2018-08-30T07:41:50Z date_updated: 2018-09-05T06:50:15Z file_id: '4289' file_name: 2003 Schneider et al_Self-induced transparency in InGaAs quantum-dot waveguides.pdf file_size: 55291 relation: main_file file_date_updated: 2018-09-05T06:50:15Z has_accepted_license: '1' intvolume: ' 83' issue: '18' keyword: - tet_topic_qd language: - iso: eng oa: '1' page: 3668-3670 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Self-induced transparency in InGaAs quantum-dot waveguides type: journal_article urn: '42888' user_id: '158' volume: 83 year: '2003' ... --- _id: '39776' author: - first_name: Guido full_name: Mertens, Guido last_name: Mertens - first_name: Thorsten full_name: Röder, Thorsten last_name: Röder - first_name: Heinrich full_name: Matthias, Heinrich last_name: Matthias - first_name: Heinrich full_name: Marsmann, Heinrich last_name: Marsmann - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: Stefan L. full_name: Schweizer, Stefan L. last_name: Schweizer - first_name: Cecile full_name: Jamois, Cecile last_name: Jamois - first_name: Ralf B. full_name: Wehrspohn, Ralf B. last_name: Wehrspohn - first_name: Mary full_name: Neubert, Mary last_name: Neubert citation: ama: Mertens G, Röder T, Matthias H, et al. Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals. Applied Physics Letters. 2003;83(15):3036-3038. doi:10.1063/1.1614000 apa: Mertens, G., Röder, T., Matthias, H., Marsmann, H., Kitzerow, H.-S., Schweizer, S. L., Jamois, C., Wehrspohn, R. B., & Neubert, M. (2003). Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals. Applied Physics Letters, 83(15), 3036–3038. https://doi.org/10.1063/1.1614000 bibtex: '@article{Mertens_Röder_Matthias_Marsmann_Kitzerow_Schweizer_Jamois_Wehrspohn_Neubert_2003, title={Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals}, volume={83}, DOI={10.1063/1.1614000}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens, Guido and Röder, Thorsten and Matthias, Heinrich and Marsmann, Heinrich and Kitzerow, Heinz-Siegfried and Schweizer, Stefan L. and Jamois, Cecile and Wehrspohn, Ralf B. and Neubert, Mary}, year={2003}, pages={3036–3038} }' chicago: 'Mertens, Guido, Thorsten Röder, Heinrich Matthias, Heinrich Marsmann, Heinz-Siegfried Kitzerow, Stefan L. Schweizer, Cecile Jamois, Ralf B. Wehrspohn, and Mary Neubert. “Two- and Three-Dimensional Photonic Crystals Made of Macroporous Silicon and Liquid Crystals.” Applied Physics Letters 83, no. 15 (2003): 3036–38. https://doi.org/10.1063/1.1614000.' ieee: 'G. Mertens et al., “Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals,” Applied Physics Letters, vol. 83, no. 15, pp. 3036–3038, 2003, doi: 10.1063/1.1614000.' mla: Mertens, Guido, et al. “Two- and Three-Dimensional Photonic Crystals Made of Macroporous Silicon and Liquid Crystals.” Applied Physics Letters, vol. 83, no. 15, AIP Publishing, 2003, pp. 3036–38, doi:10.1063/1.1614000. short: G. Mertens, T. Röder, H. Matthias, H. Marsmann, H.-S. Kitzerow, S.L. Schweizer, C. Jamois, R.B. Wehrspohn, M. Neubert, Applied Physics Letters 83 (2003) 3036–3038. date_created: 2023-01-24T19:19:36Z date_updated: 2023-01-24T19:20:20Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1614000 intvolume: ' 83' issue: '15' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 3036-3038 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Two- and three-dimensional photonic crystals made of macroporous silicon and liquid crystals type: journal_article user_id: '254' volume: 83 year: '2003' ... --- _id: '1745' author: - first_name: T. full_name: Pertsch, T. last_name: Pertsch - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: U. full_name: Peschel, U. last_name: Peschel - first_name: A. full_name: Bräuer, A. last_name: Bräuer - first_name: F. full_name: Lederer, F. last_name: Lederer citation: ama: Pertsch T, Zentgraf T, Peschel U, Bräuer A, Lederer F. Beam steering in waveguide arrays. Applied Physics Letters. 2002;80(18):3247-3249. doi:10.1063/1.1476720 apa: Pertsch, T., Zentgraf, T., Peschel, U., Bräuer, A., & Lederer, F. (2002). Beam steering in waveguide arrays. Applied Physics Letters, 80(18), 3247–3249. https://doi.org/10.1063/1.1476720 bibtex: '@article{Pertsch_Zentgraf_Peschel_Bräuer_Lederer_2002, title={Beam steering in waveguide arrays}, volume={80}, DOI={10.1063/1.1476720}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pertsch, T. and Zentgraf, Thomas and Peschel, U. and Bräuer, A. and Lederer, F.}, year={2002}, pages={3247–3249} }' chicago: 'Pertsch, T., Thomas Zentgraf, U. Peschel, A. Bräuer, and F. Lederer. “Beam Steering in Waveguide Arrays.” Applied Physics Letters 80, no. 18 (2002): 3247–49. https://doi.org/10.1063/1.1476720.' ieee: T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, and F. Lederer, “Beam steering in waveguide arrays,” Applied Physics Letters, vol. 80, no. 18, pp. 3247–3249, 2002. mla: Pertsch, T., et al. “Beam Steering in Waveguide Arrays.” Applied Physics Letters, vol. 80, no. 18, AIP Publishing, 2002, pp. 3247–49, doi:10.1063/1.1476720. short: T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, F. Lederer, Applied Physics Letters 80 (2002) 3247–3249. date_created: 2018-03-23T12:54:43Z date_updated: 2022-01-06T06:53:12Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1476720 intvolume: ' 80' issue: '18' page: 3247-3249 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Beam steering in waveguide arrays type: journal_article user_id: '30525' volume: 80 year: '2002' ... --- _id: '8731' author: - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: G. full_name: Apetrii, G. last_name: Apetrii - first_name: S. full_name: Skaberna, S. last_name: Skaberna - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Fischer SF, Apetrii G, Skaberna S, Kunze U, Reuter D, Wieck AD. Control of the confining potential in ballistic constrictions using a persistent charging effect. Applied Physics Letters. 2002:2779-2781. doi:10.1063/1.1511278 apa: Fischer, S. F., Apetrii, G., Skaberna, S., Kunze, U., Reuter, D., & Wieck, A. D. (2002). Control of the confining potential in ballistic constrictions using a persistent charging effect. Applied Physics Letters, 2779–2781. https://doi.org/10.1063/1.1511278 bibtex: '@article{Fischer_Apetrii_Skaberna_Kunze_Reuter_Wieck_2002, title={Control of the confining potential in ballistic constrictions using a persistent charging effect}, DOI={10.1063/1.1511278}, journal={Applied Physics Letters}, author={Fischer, S. F. and Apetrii, G. and Skaberna, S. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2779–2781} }' chicago: Fischer, S. F., G. Apetrii, S. Skaberna, U. Kunze, Dirk Reuter, and A. D. Wieck. “Control of the Confining Potential in Ballistic Constrictions Using a Persistent Charging Effect.” Applied Physics Letters, 2002, 2779–81. https://doi.org/10.1063/1.1511278. ieee: S. F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, and A. D. Wieck, “Control of the confining potential in ballistic constrictions using a persistent charging effect,” Applied Physics Letters, pp. 2779–2781, 2002. mla: Fischer, S. F., et al. “Control of the Confining Potential in Ballistic Constrictions Using a Persistent Charging Effect.” Applied Physics Letters, 2002, pp. 2779–81, doi:10.1063/1.1511278. short: S.F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2779–2781. date_created: 2019-03-28T15:08:27Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1511278 language: - iso: eng page: 2779-2781 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Control of the confining potential in ballistic constrictions using a persistent charging effect type: journal_article user_id: '42514' year: '2002' ... --- _id: '8736' author: - first_name: J. full_name: Regul, J. last_name: Regul - first_name: U. F. full_name: Keyser, U. F. last_name: Keyser - first_name: M. full_name: Paesler, M. last_name: Paesler - first_name: F. full_name: Hohls, F. last_name: Hohls - first_name: U. full_name: Zeitler, U. last_name: Zeitler - first_name: R. J. full_name: Haug, R. J. last_name: Haug - first_name: A. full_name: Malavé, A. last_name: Malavé - first_name: E. full_name: Oesterschulze, E. last_name: Oesterschulze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Regul J, Keyser UF, Paesler M, et al. Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. Applied Physics Letters. 2002:2023-2025. doi:10.1063/1.1506417 apa: Regul, J., Keyser, U. F., Paesler, M., Hohls, F., Zeitler, U., Haug, R. J., … Wieck, A. D. (2002). Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. Applied Physics Letters, 2023–2025. https://doi.org/10.1063/1.1506417 bibtex: '@article{Regul_Keyser_Paesler_Hohls_Zeitler_Haug_Malavé_Oesterschulze_Reuter_Wieck_2002, title={Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip}, DOI={10.1063/1.1506417}, journal={Applied Physics Letters}, author={Regul, J. and Keyser, U. F. and Paesler, M. and Hohls, F. and Zeitler, U. and Haug, R. J. and Malavé, A. and Oesterschulze, E. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2023–2025} }' chicago: Regul, J., U. F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R. J. Haug, A. Malavé, E. Oesterschulze, Dirk Reuter, and A. D. Wieck. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.” Applied Physics Letters, 2002, 2023–25. https://doi.org/10.1063/1.1506417. ieee: J. Regul et al., “Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip,” Applied Physics Letters, pp. 2023–2025, 2002. mla: Regul, J., et al. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.” Applied Physics Letters, 2002, pp. 2023–25, doi:10.1063/1.1506417. short: J. Regul, U.F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R.J. Haug, A. Malavé, E. Oesterschulze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2023–2025. date_created: 2019-03-28T15:13:44Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1506417 language: - iso: eng page: 2023-2025 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip type: journal_article user_id: '42514' year: '2002' ... --- _id: '8740' author: - first_name: M. R. full_name: Schaapman, M. R. last_name: Schaapman - first_name: P. C. M. full_name: Christianen, P. C. M. last_name: Christianen - first_name: J. C. full_name: Maan, J. C. last_name: Maan - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose torsional magnetometer with optical detection. Applied Physics Letters. 2002:1041-1043. doi:10.1063/1.1498152 apa: Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., & Wieck, A. D. (2002). A multipurpose torsional magnetometer with optical detection. Applied Physics Letters, 1041–1043. https://doi.org/10.1063/1.1498152 bibtex: '@article{Schaapman_Christianen_Maan_Reuter_Wieck_2002, title={A multipurpose torsional magnetometer with optical detection}, DOI={10.1063/1.1498152}, journal={Applied Physics Letters}, author={Schaapman, M. R. and Christianen, P. C. M. and Maan, J. C. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={1041–1043} }' chicago: Schaapman, M. R., P. C. M. Christianen, J. C. Maan, Dirk Reuter, and A. D. Wieck. “A Multipurpose Torsional Magnetometer with Optical Detection.” Applied Physics Letters, 2002, 1041–43. https://doi.org/10.1063/1.1498152. ieee: M. R. Schaapman, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck, “A multipurpose torsional magnetometer with optical detection,” Applied Physics Letters, pp. 1041–1043, 2002. mla: Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical Detection.” Applied Physics Letters, 2002, pp. 1041–43, doi:10.1063/1.1498152. short: M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 1041–1043. date_created: 2019-03-28T15:17:30Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1498152 language: - iso: eng page: 1041-1043 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: A multipurpose torsional magnetometer with optical detection type: journal_article user_id: '42514' year: '2002' ... --- _id: '8746' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C. full_name: Meier, C. last_name: Meier - first_name: M. A. Serrano full_name: Álvarez, M. A. Serrano last_name: Álvarez - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters. 2002:377-379. doi:10.1063/1.1386618 apa: Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2002). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters, 377–379. https://doi.org/10.1063/1.1386618 bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices}, DOI={10.1063/1.1386618}, journal={Applied Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano and Wieck, A. D.}, year={2002}, pages={377–379} }' chicago: Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, 2002, 377–79. https://doi.org/10.1063/1.1386618. ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,” Applied Physics Letters, pp. 377–379, 2002. mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, 2002, pp. 377–79, doi:10.1063/1.1386618. short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters (2002) 377–379. date_created: 2019-03-29T11:23:32Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1386618 language: - iso: eng page: 377-379 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices type: journal_article user_id: '42514' year: '2002' ... --- _id: '22620' author: - first_name: Maria Teresa full_name: de los Arcos de Pedro, Maria Teresa id: '54556' last_name: de los Arcos de Pedro - first_name: F. full_name: Vonau, F. last_name: Vonau - first_name: M. G. full_name: Garnier, M. G. last_name: Garnier - first_name: V. full_name: Thommen, V. last_name: Thommen - first_name: H.-G. full_name: Boyen, H.-G. last_name: Boyen - first_name: P. full_name: Oelhafen, P. last_name: Oelhafen - first_name: M. full_name: Düggelin, M. last_name: Düggelin - first_name: D. full_name: Mathis, D. last_name: Mathis - first_name: R. full_name: Guggenheim, R. last_name: Guggenheim citation: ama: de los Arcos de Pedro MT, Vonau F, Garnier MG, et al. Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition. Applied Physics Letters. Published online 2002:2383-2385. doi:10.1063/1.1465529 apa: de los Arcos de Pedro, M. T., Vonau, F., Garnier, M. G., Thommen, V., Boyen, H.-G., Oelhafen, P., Düggelin, M., Mathis, D., & Guggenheim, R. (2002). Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition. Applied Physics Letters, 2383–2385. https://doi.org/10.1063/1.1465529 bibtex: '@article{de los Arcos de Pedro_Vonau_Garnier_Thommen_Boyen_Oelhafen_Düggelin_Mathis_Guggenheim_2002, title={Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition}, DOI={10.1063/1.1465529}, journal={Applied Physics Letters}, author={de los Arcos de Pedro, Maria Teresa and Vonau, F. and Garnier, M. G. and Thommen, V. and Boyen, H.-G. and Oelhafen, P. and Düggelin, M. and Mathis, D. and Guggenheim, R.}, year={2002}, pages={2383–2385} }' chicago: Arcos de Pedro, Maria Teresa de los, F. Vonau, M. G. Garnier, V. Thommen, H.-G. Boyen, P. Oelhafen, M. Düggelin, D. Mathis, and R. Guggenheim. “Influence of Iron–Silicon Interaction on the Growth of Carbon Nanotubes Produced by Chemical Vapor Deposition.” Applied Physics Letters, 2002, 2383–85. https://doi.org/10.1063/1.1465529. ieee: 'M. T. de los Arcos de Pedro et al., “Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition,” Applied Physics Letters, pp. 2383–2385, 2002, doi: 10.1063/1.1465529.' mla: de los Arcos de Pedro, Maria Teresa, et al. “Influence of Iron–Silicon Interaction on the Growth of Carbon Nanotubes Produced by Chemical Vapor Deposition.” Applied Physics Letters, 2002, pp. 2383–85, doi:10.1063/1.1465529. short: M.T. de los Arcos de Pedro, F. Vonau, M.G. Garnier, V. Thommen, H.-G. Boyen, P. Oelhafen, M. Düggelin, D. Mathis, R. Guggenheim, Applied Physics Letters (2002) 2383–2385. date_created: 2021-07-07T11:48:16Z date_updated: 2023-01-24T08:30:54Z department: - _id: '302' doi: 10.1063/1.1465529 extern: '1' language: - iso: eng page: 2383-2385 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Influence of iron–silicon interaction on the growth of carbon nanotubes produced by chemical vapor deposition type: journal_article user_id: '54556' year: '2002' ... --- _id: '39778' author: - first_name: Guido full_name: Mertens, Guido last_name: Mertens - first_name: Thorsten full_name: Röder, Thorsten last_name: Röder - first_name: Ralf full_name: Schweins, Ralf last_name: Schweins - first_name: Klaus full_name: Huber, Klaus id: '237' last_name: Huber - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Mertens G, Röder T, Schweins R, Huber K, Kitzerow H-S. Shift of the photonic band gap in two photonic crystal/liquid crystal composites. Applied Physics Letters. 2002;80(11):1885-1887. doi:10.1063/1.1461885 apa: Mertens, G., Röder, T., Schweins, R., Huber, K., & Kitzerow, H.-S. (2002). Shift of the photonic band gap in two photonic crystal/liquid crystal composites. Applied Physics Letters, 80(11), 1885–1887. https://doi.org/10.1063/1.1461885 bibtex: '@article{Mertens_Röder_Schweins_Huber_Kitzerow_2002, title={Shift of the photonic band gap in two photonic crystal/liquid crystal composites}, volume={80}, DOI={10.1063/1.1461885}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens, Guido and Röder, Thorsten and Schweins, Ralf and Huber, Klaus and Kitzerow, Heinz-Siegfried}, year={2002}, pages={1885–1887} }' chicago: 'Mertens, Guido, Thorsten Röder, Ralf Schweins, Klaus Huber, and Heinz-Siegfried Kitzerow. “Shift of the Photonic Band Gap in Two Photonic Crystal/Liquid Crystal Composites.” Applied Physics Letters 80, no. 11 (2002): 1885–87. https://doi.org/10.1063/1.1461885.' ieee: 'G. Mertens, T. Röder, R. Schweins, K. Huber, and H.-S. Kitzerow, “Shift of the photonic band gap in two photonic crystal/liquid crystal composites,” Applied Physics Letters, vol. 80, no. 11, pp. 1885–1887, 2002, doi: 10.1063/1.1461885.' mla: Mertens, Guido, et al. “Shift of the Photonic Band Gap in Two Photonic Crystal/Liquid Crystal Composites.” Applied Physics Letters, vol. 80, no. 11, AIP Publishing, 2002, pp. 1885–87, doi:10.1063/1.1461885. short: G. Mertens, T. Röder, R. Schweins, K. Huber, H.-S. Kitzerow, Applied Physics Letters 80 (2002) 1885–1887. date_created: 2023-01-24T19:21:48Z date_updated: 2023-02-15T09:12:16Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1461885 intvolume: ' 80' issue: '11' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 1885-1887 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Shift of the photonic band gap in two photonic crystal/liquid crystal composites type: journal_article user_id: '254' volume: 80 year: '2002' ... --- _id: '8767' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: M. A. Serrano full_name: Álvarez, M. A. Serrano last_name: Álvarez - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters. 2001;79:377-379. doi:10.1063/1.1386618 apa: Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2001). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters, 79, 377–379. https://doi.org/10.1063/1.1386618 bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2001, title={Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices}, volume={79}, DOI={10.1063/1.1386618}, journal={Applied Physics Letters}, author={Reuter, Dirk and Meier, Cedrik and Álvarez, M. A. Serrano and Wieck, A. D.}, year={2001}, pages={377–379} }' chicago: 'Reuter, Dirk, Cedrik Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” Applied Physics Letters 79 (2001): 377–79. https://doi.org/10.1063/1.1386618.' ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,” Applied Physics Letters, vol. 79, pp. 377–379, 2001. mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, vol. 79, 2001, pp. 377–79, doi:10.1063/1.1386618. short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters 79 (2001) 377–379. date_created: 2019-04-01T07:54:36Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1386618 intvolume: ' 79' language: - iso: eng page: 377-379 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices type: journal_article user_id: '20798' volume: 79 year: '2001' ... --- _id: '40296' author: - first_name: V. P. full_name: Vorflusev, V. P. last_name: Vorflusev - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: V. G. full_name: Chigrinov, V. G. last_name: Chigrinov citation: ama: Vorflusev VP, Kitzerow H-S, Chigrinov VG. Azimuthal surface gliding of a nematic liquid crystal. Applied Physics Letters. 1997;70(25):3359-3361. doi:10.1063/1.119170 apa: Vorflusev, V. P., Kitzerow, H.-S., & Chigrinov, V. G. (1997). Azimuthal surface gliding of a nematic liquid crystal. Applied Physics Letters, 70(25), 3359–3361. https://doi.org/10.1063/1.119170 bibtex: '@article{Vorflusev_Kitzerow_Chigrinov_1997, title={Azimuthal surface gliding of a nematic liquid crystal}, volume={70}, DOI={10.1063/1.119170}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vorflusev, V. P. and Kitzerow, Heinz-Siegfried and Chigrinov, V. G.}, year={1997}, pages={3359–3361} }' chicago: 'Vorflusev, V. P., Heinz-Siegfried Kitzerow, and V. G. Chigrinov. “Azimuthal Surface Gliding of a Nematic Liquid Crystal.” Applied Physics Letters 70, no. 25 (1997): 3359–61. https://doi.org/10.1063/1.119170.' ieee: 'V. P. Vorflusev, H.-S. Kitzerow, and V. G. Chigrinov, “Azimuthal surface gliding of a nematic liquid crystal,” Applied Physics Letters, vol. 70, no. 25, pp. 3359–3361, 1997, doi: 10.1063/1.119170.' mla: Vorflusev, V. P., et al. “Azimuthal Surface Gliding of a Nematic Liquid Crystal.” Applied Physics Letters, vol. 70, no. 25, AIP Publishing, 1997, pp. 3359–61, doi:10.1063/1.119170. short: V.P. Vorflusev, H.-S. Kitzerow, V.G. Chigrinov, Applied Physics Letters 70 (1997) 3359–3361. date_created: 2023-01-26T10:44:26Z date_updated: 2023-01-26T11:50:23Z department: - _id: '313' doi: 10.1063/1.119170 extern: '1' intvolume: ' 70' issue: '25' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 3359-3361 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Azimuthal surface gliding of a nematic liquid crystal type: journal_article user_id: '254' volume: 70 year: '1997' ... --- _id: '40305' author: - first_name: J. full_name: Strauss, J. last_name: Strauss - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Strauss J, Kitzerow H-S. Gray‐scale in polymer‐stabilized antiferroelectric liquid crystal displays. Applied Physics Letters. 1996;69(6):725-727. doi:10.1063/1.117871 apa: Strauss, J., & Kitzerow, H.-S. (1996). Gray‐scale in polymer‐stabilized antiferroelectric liquid crystal displays. Applied Physics Letters, 69(6), 725–727. https://doi.org/10.1063/1.117871 bibtex: '@article{Strauss_Kitzerow_1996, title={Gray‐scale in polymer‐stabilized antiferroelectric liquid crystal displays}, volume={69}, DOI={10.1063/1.117871}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Strauss, J. and Kitzerow, Heinz-Siegfried}, year={1996}, pages={725–727} }' chicago: 'Strauss, J., and Heinz-Siegfried Kitzerow. “Gray‐scale in Polymer‐stabilized Antiferroelectric Liquid Crystal Displays.” Applied Physics Letters 69, no. 6 (1996): 725–27. https://doi.org/10.1063/1.117871.' ieee: 'J. Strauss and H.-S. Kitzerow, “Gray‐scale in polymer‐stabilized antiferroelectric liquid crystal displays,” Applied Physics Letters, vol. 69, no. 6, pp. 725–727, 1996, doi: 10.1063/1.117871.' mla: Strauss, J., and Heinz-Siegfried Kitzerow. “Gray‐scale in Polymer‐stabilized Antiferroelectric Liquid Crystal Displays.” Applied Physics Letters, vol. 69, no. 6, AIP Publishing, 1996, pp. 725–27, doi:10.1063/1.117871. short: J. Strauss, H.-S. Kitzerow, Applied Physics Letters 69 (1996) 725–727. date_created: 2023-01-26T10:49:05Z date_updated: 2023-01-26T11:51:01Z department: - _id: '313' doi: 10.1063/1.117871 extern: '1' intvolume: ' 69' issue: '6' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 725-727 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Gray‐scale in polymer‐stabilized antiferroelectric liquid crystal displays type: journal_article user_id: '254' volume: 69 year: '1996' ... --- _id: '40318' author: - first_name: Sukhmal C. full_name: Jain, Sukhmal C. last_name: Jain - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Jain SC, Kitzerow H-S. Bulk‐induced alignment of nematic liquid crystals by photopolymerization. Applied Physics Letters. 1994;64(22):2946-2948. doi:10.1063/1.111419 apa: Jain, S. C., & Kitzerow, H.-S. (1994). Bulk‐induced alignment of nematic liquid crystals by photopolymerization. Applied Physics Letters, 64(22), 2946–2948. https://doi.org/10.1063/1.111419 bibtex: '@article{Jain_Kitzerow_1994, title={Bulk‐induced alignment of nematic liquid crystals by photopolymerization}, volume={64}, DOI={10.1063/1.111419}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jain, Sukhmal C. and Kitzerow, Heinz-Siegfried}, year={1994}, pages={2946–2948} }' chicago: 'Jain, Sukhmal C., and Heinz-Siegfried Kitzerow. “Bulk‐induced Alignment of Nematic Liquid Crystals by Photopolymerization.” Applied Physics Letters 64, no. 22 (1994): 2946–48. https://doi.org/10.1063/1.111419.' ieee: 'S. C. Jain and H.-S. Kitzerow, “Bulk‐induced alignment of nematic liquid crystals by photopolymerization,” Applied Physics Letters, vol. 64, no. 22, pp. 2946–2948, 1994, doi: 10.1063/1.111419.' mla: Jain, Sukhmal C., and Heinz-Siegfried Kitzerow. “Bulk‐induced Alignment of Nematic Liquid Crystals by Photopolymerization.” Applied Physics Letters, vol. 64, no. 22, AIP Publishing, 1994, pp. 2946–48, doi:10.1063/1.111419. short: S.C. Jain, H.-S. Kitzerow, Applied Physics Letters 64 (1994) 2946–2948. date_created: 2023-01-26T11:04:44Z date_updated: 2023-01-26T11:53:03Z department: - _id: '313' doi: 10.1063/1.111419 extern: '1' intvolume: ' 64' issue: '22' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 2946-2948 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Bulk‐induced alignment of nematic liquid crystals by photopolymerization type: journal_article user_id: '254' volume: 64 year: '1994' ... --- _id: '40329' author: - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: Henning full_name: Molsen, Henning last_name: Molsen - first_name: Gerd full_name: Heppke, Gerd last_name: Heppke citation: ama: Kitzerow H-S, Molsen H, Heppke G. Linear electro‐optic effects in polymer‐dispersed ferroelectric liquid crystals. Applied Physics Letters. 1992;60(25):3093-3095. doi:10.1063/1.106762 apa: Kitzerow, H.-S., Molsen, H., & Heppke, G. (1992). Linear electro‐optic effects in polymer‐dispersed ferroelectric liquid crystals. Applied Physics Letters, 60(25), 3093–3095. https://doi.org/10.1063/1.106762 bibtex: '@article{Kitzerow_Molsen_Heppke_1992, title={Linear electro‐optic effects in polymer‐dispersed ferroelectric liquid crystals}, volume={60}, DOI={10.1063/1.106762}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kitzerow, Heinz-Siegfried and Molsen, Henning and Heppke, Gerd}, year={1992}, pages={3093–3095} }' chicago: 'Kitzerow, Heinz-Siegfried, Henning Molsen, and Gerd Heppke. “Linear Electro‐optic Effects in Polymer‐dispersed Ferroelectric Liquid Crystals.” Applied Physics Letters 60, no. 25 (1992): 3093–95. https://doi.org/10.1063/1.106762.' ieee: 'H.-S. Kitzerow, H. Molsen, and G. Heppke, “Linear electro‐optic effects in polymer‐dispersed ferroelectric liquid crystals,” Applied Physics Letters, vol. 60, no. 25, pp. 3093–3095, 1992, doi: 10.1063/1.106762.' mla: Kitzerow, Heinz-Siegfried, et al. “Linear Electro‐optic Effects in Polymer‐dispersed Ferroelectric Liquid Crystals.” Applied Physics Letters, vol. 60, no. 25, AIP Publishing, 1992, pp. 3093–95, doi:10.1063/1.106762. short: H.-S. Kitzerow, H. Molsen, G. Heppke, Applied Physics Letters 60 (1992) 3093–3095. date_created: 2023-01-26T11:22:16Z date_updated: 2023-01-26T11:49:03Z department: - _id: '313' doi: 10.1063/1.106762 extern: '1' intvolume: ' 60' issue: '25' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng page: 3093-3095 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Linear electro‐optic effects in polymer‐dispersed ferroelectric liquid crystals type: journal_article user_id: '254' volume: 60 year: '1992' ...