---
_id: '43421'
abstract:
- lang: eng
text: The achievement of a flat metasurface has realized extraordinary control over
light–matter interaction at the nanoscale, enabling widespread use in imaging,
holography, and biophotonics. However, three-dimensional metasurfaces with the
potential to provide additional light–matter manipulation flexibility attract
only little interest. Here, we demonstrate a three-dimensional metasurface scheme
capable of providing dual phase control through out-of-plane plasmonic resonance
of L-shape antennas. Under circularly polarized excitation at a specific wavelength,
the L-shape antennas with rotating orientation angle act as spatially variant
three-dimensional tilted dipoles and are able to generate desire phase delay for
different polarization components. Generalized Snell's law is achieved for both
in-plane and out-of-plane dipole components through arranging such L-shape antennas
into arrays. These three-dimensional metasurfaces suggest a route for wavefront
modulation and a variety of nanophotonic applications.
article_number: '141702'
article_type: original
author:
- first_name: Tianyou
full_name: Li, Tianyou
last_name: Li
- first_name: Yanjie
full_name: Chen, Yanjie
last_name: Chen
- first_name: Yongtian
full_name: Wang, Yongtian
last_name: Wang
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Lingling
full_name: Huang, Lingling
last_name: Huang
citation:
ama: Li T, Chen Y, Wang Y, Zentgraf T, Huang L. Three-dimensional dipole momentum
analog based on L-shape metasurface. Applied Physics Letters. 2023;122(14).
doi:10.1063/5.0142389
apa: Li, T., Chen, Y., Wang, Y., Zentgraf, T., & Huang, L. (2023). Three-dimensional
dipole momentum analog based on L-shape metasurface. Applied Physics Letters,
122(14), Article 141702. https://doi.org/10.1063/5.0142389
bibtex: '@article{Li_Chen_Wang_Zentgraf_Huang_2023, title={Three-dimensional dipole
momentum analog based on L-shape metasurface}, volume={122}, DOI={10.1063/5.0142389},
number={14141702}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Li, Tianyou and Chen, Yanjie and Wang, Yongtian and Zentgraf, Thomas and
Huang, Lingling}, year={2023} }'
chicago: Li, Tianyou, Yanjie Chen, Yongtian Wang, Thomas Zentgraf, and Lingling
Huang. “Three-Dimensional Dipole Momentum Analog Based on L-Shape Metasurface.”
Applied Physics Letters 122, no. 14 (2023). https://doi.org/10.1063/5.0142389.
ieee: 'T. Li, Y. Chen, Y. Wang, T. Zentgraf, and L. Huang, “Three-dimensional dipole
momentum analog based on L-shape metasurface,” Applied Physics Letters,
vol. 122, no. 14, Art. no. 141702, 2023, doi: 10.1063/5.0142389.'
mla: Li, Tianyou, et al. “Three-Dimensional Dipole Momentum Analog Based on L-Shape
Metasurface.” Applied Physics Letters, vol. 122, no. 14, 141702, AIP Publishing,
2023, doi:10.1063/5.0142389.
short: T. Li, Y. Chen, Y. Wang, T. Zentgraf, L. Huang, Applied Physics Letters 122
(2023).
date_created: 2023-04-06T06:01:06Z
date_updated: 2023-04-06T06:02:58Z
department:
- _id: '15'
- _id: '230'
- _id: '289'
- _id: '623'
doi: 10.1063/5.0142389
intvolume: ' 122'
issue: '14'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: Three-dimensional dipole momentum analog based on L-shape metasurface
type: journal_article
user_id: '30525'
volume: 122
year: '2023'
...
---
_id: '31480'
abstract:
- lang: eng
text: Optical geometric phase encoded by in-plane spatial orientation of microstructures
has promoted the rapid development of numerous functional meta-devices. However,
pushing the concept of the geometric phase toward the acoustic community still
faces challenges. In this work, we utilize two acoustic nonlocal metagratings
that could support a direct conversion between an acoustic plane wave and a designated
vortex mode to obtain the acoustic geometric phase, in which an orbital angular
momentum conversion process plays a vital role. In addition, we realize the acoustic
geometric phases of different orders by merely varying the orientation angle of
the acoustic nonlocal metagratings. Intriguingly, according to our developed theory,
we reveal that the reflective acoustic geometric phase, which is twice the transmissive
one, can be readily realized by transferring the transmitted configuration to
a reflected one. Both the theoretical study and experimental measurements verify
the announced transmissive and reflective acoustic geometric phases. Moreover,
the reconfigurability and continuous phase modulation that covers the 2π range
shown by the acoustic geometric phases provide us with the alternatives in advanced
acoustic wavefront control.
article_number: '211702'
author:
- first_name: Bingyi
full_name: Liu, Bingyi
last_name: Liu
- first_name: Zhiling
full_name: Zhou, Zhiling
last_name: Zhou
- first_name: Yongtian
full_name: Wang, Yongtian
last_name: Wang
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Yong
full_name: Li, Yong
last_name: Li
- first_name: Lingling
full_name: Huang, Lingling
last_name: Huang
citation:
ama: Liu B, Zhou Z, Wang Y, Zentgraf T, Li Y, Huang L. Experimental verification
of the acoustic geometric phase. Applied Physics Letters. 2022;120(21).
doi:10.1063/5.0091474
apa: Liu, B., Zhou, Z., Wang, Y., Zentgraf, T., Li, Y., & Huang, L. (2022).
Experimental verification of the acoustic geometric phase. Applied Physics
Letters, 120(21), Article 211702. https://doi.org/10.1063/5.0091474
bibtex: '@article{Liu_Zhou_Wang_Zentgraf_Li_Huang_2022, title={Experimental verification
of the acoustic geometric phase}, volume={120}, DOI={10.1063/5.0091474},
number={21211702}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Liu, Bingyi and Zhou, Zhiling and Wang, Yongtian and Zentgraf, Thomas
and Li, Yong and Huang, Lingling}, year={2022} }'
chicago: Liu, Bingyi, Zhiling Zhou, Yongtian Wang, Thomas Zentgraf, Yong Li, and
Lingling Huang. “Experimental Verification of the Acoustic Geometric Phase.” Applied
Physics Letters 120, no. 21 (2022). https://doi.org/10.1063/5.0091474.
ieee: 'B. Liu, Z. Zhou, Y. Wang, T. Zentgraf, Y. Li, and L. Huang, “Experimental
verification of the acoustic geometric phase,” Applied Physics Letters,
vol. 120, no. 21, Art. no. 211702, 2022, doi: 10.1063/5.0091474.'
mla: Liu, Bingyi, et al. “Experimental Verification of the Acoustic Geometric Phase.”
Applied Physics Letters, vol. 120, no. 21, 211702, AIP Publishing, 2022,
doi:10.1063/5.0091474.
short: B. Liu, Z. Zhou, Y. Wang, T. Zentgraf, Y. Li, L. Huang, Applied Physics Letters
120 (2022).
date_created: 2022-05-27T12:35:53Z
date_updated: 2022-05-27T12:36:43Z
department:
- _id: '15'
- _id: '230'
- _id: '289'
- _id: '623'
doi: 10.1063/5.0091474
intvolume: ' 120'
issue: '21'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Experimental verification of the acoustic geometric phase
type: journal_article
user_id: '30525'
volume: 120
year: '2022'
...
---
_id: '36414'
abstract:
- lang: eng
text: Recently, microcavities with anisotropic materials were shown to
be able to create bands with non-zero local Berry curvature. The anisotropic refractive
index of the cavity layer is believed to be critical in opening an energy gap
at the tilted Dirac points. In this work, we show that the anticrossing between
a cavity mode and a Bragg mode can also be realized within an empty microcavity
without any birefringent materials in the cavity layer. Nondispersive bands are
observed within the energy gap due to the particular refractive index distribution
of the sample. The intrinsic TE-TM splitting and XY splitting of DBR mirrors induce
the squeezing of the cavity modes in momentum space, so that the nondispersive
bands are tilted and spin-dependent. Our results pave the way to investigate interesting
physical phenomena of photonic modes close to or in the nondispersive bands without
anisotropic cavity layers.
article_number: '201103'
author:
- first_name: Ying
full_name: Gao, Ying
last_name: Gao
- first_name: Yao
full_name: Li, Yao
last_name: Li
- first_name: Xuekai
full_name: Ma, Xuekai
last_name: Ma
- first_name: Meini
full_name: Gao, Meini
last_name: Gao
- first_name: Haitao
full_name: Dai, Haitao
last_name: Dai
- first_name: Stefan
full_name: Schumacher, Stefan
last_name: Schumacher
- first_name: Tingge
full_name: Gao, Tingge
last_name: Gao
citation:
ama: Gao Y, Li Y, Ma X, et al. Tilting nondispersive bands in an empty microcavity.
Applied Physics Letters. 2022;121(20). doi:10.1063/5.0093908
apa: Gao, Y., Li, Y., Ma, X., Gao, M., Dai, H., Schumacher, S., & Gao, T. (2022).
Tilting nondispersive bands in an empty microcavity. Applied Physics Letters,
121(20), Article 201103. https://doi.org/10.1063/5.0093908
bibtex: '@article{Gao_Li_Ma_Gao_Dai_Schumacher_Gao_2022, title={Tilting nondispersive
bands in an empty microcavity}, volume={121}, DOI={10.1063/5.0093908},
number={20201103}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Gao, Ying and Li, Yao and Ma, Xuekai and Gao, Meini and Dai, Haitao and
Schumacher, Stefan and Gao, Tingge}, year={2022} }'
chicago: Gao, Ying, Yao Li, Xuekai Ma, Meini Gao, Haitao Dai, Stefan Schumacher,
and Tingge Gao. “Tilting Nondispersive Bands in an Empty Microcavity.” Applied
Physics Letters 121, no. 20 (2022). https://doi.org/10.1063/5.0093908.
ieee: 'Y. Gao et al., “Tilting nondispersive bands in an empty microcavity,”
Applied Physics Letters, vol. 121, no. 20, Art. no. 201103, 2022, doi:
10.1063/5.0093908.'
mla: Gao, Ying, et al. “Tilting Nondispersive Bands in an Empty Microcavity.” Applied
Physics Letters, vol. 121, no. 20, 201103, AIP Publishing, 2022, doi:10.1063/5.0093908.
short: Y. Gao, Y. Li, X. Ma, M. Gao, H. Dai, S. Schumacher, T. Gao, Applied Physics
Letters 121 (2022).
date_created: 2023-01-12T12:03:49Z
date_updated: 2023-01-12T12:06:03Z
doi: 10.1063/5.0093908
intvolume: ' 121'
issue: '20'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tilting nondispersive bands in an empty microcavity
type: journal_article
user_id: '59416'
volume: 121
year: '2022'
...
---
_id: '34094'
article_number: '201103'
author:
- first_name: Ying
full_name: Gao, Ying
last_name: Gao
- first_name: Yao
full_name: Li, Yao
last_name: Li
- first_name: Xuekai
full_name: Ma, Xuekai
id: '59416'
last_name: Ma
- first_name: Meini
full_name: Gao, Meini
last_name: Gao
- first_name: Haitao
full_name: Dai, Haitao
last_name: Dai
- first_name: Stefan
full_name: Schumacher, Stefan
id: '27271'
last_name: Schumacher
orcid: 0000-0003-4042-4951
- first_name: Tingge
full_name: Gao, Tingge
last_name: Gao
citation:
ama: Gao Y, Li Y, Ma X, et al. Tilting nondispersive bands in an empty microcavity.
Applied Physics Letters. 2022;121(20). doi:10.1063/5.0093908
apa: Gao, Y., Li, Y., Ma, X., Gao, M., Dai, H., Schumacher, S., & Gao, T. (2022).
Tilting nondispersive bands in an empty microcavity. Applied Physics Letters,
121(20), Article 201103. https://doi.org/10.1063/5.0093908
bibtex: '@article{Gao_Li_Ma_Gao_Dai_Schumacher_Gao_2022, title={Tilting nondispersive
bands in an empty microcavity}, volume={121}, DOI={10.1063/5.0093908},
number={20201103}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Gao, Ying and Li, Yao and Ma, Xuekai and Gao, Meini and Dai, Haitao and
Schumacher, Stefan and Gao, Tingge}, year={2022} }'
chicago: Gao, Ying, Yao Li, Xuekai Ma, Meini Gao, Haitao Dai, Stefan Schumacher,
and Tingge Gao. “Tilting Nondispersive Bands in an Empty Microcavity.” Applied
Physics Letters 121, no. 20 (2022). https://doi.org/10.1063/5.0093908.
ieee: 'Y. Gao et al., “Tilting nondispersive bands in an empty microcavity,”
Applied Physics Letters, vol. 121, no. 20, Art. no. 201103, 2022, doi:
10.1063/5.0093908.'
mla: Gao, Ying, et al. “Tilting Nondispersive Bands in an Empty Microcavity.” Applied
Physics Letters, vol. 121, no. 20, 201103, AIP Publishing, 2022, doi:10.1063/5.0093908.
short: Y. Gao, Y. Li, X. Ma, M. Gao, H. Dai, S. Schumacher, T. Gao, Applied Physics
Letters 121 (2022).
date_created: 2022-11-16T12:29:11Z
date_updated: 2023-04-20T15:20:48Z
department:
- _id: '15'
- _id: '170'
- _id: '297'
- _id: '705'
- _id: '230'
- _id: '429'
- _id: '35'
doi: 10.1063/5.0093908
intvolume: ' 121'
issue: '20'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
project:
- _id: '53'
name: 'TRR 142: TRR 142'
- _id: '54'
name: 'TRR 142 - A: TRR 142 - Project Area A'
- _id: '61'
name: 'TRR 142 - A4: TRR 142 - Subproject A4'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tilting nondispersive bands in an empty microcavity
type: journal_article
user_id: '16199'
volume: 121
year: '2022'
...
---
_id: '47982'
abstract:
- lang: eng
text: Spontaneous Raman spectroscopy (SR) is a versatile method for analysis and
visualization of ferroelectric crystal structures, including domain walls. Nevertheless,
the necessary acquisition time makes SR impractical for in situ analysis and large
scale imaging. In this work, we introduce broadband coherent anti-Stokes Raman
spectroscopy (B-CARS) as a high-speed alternative to conventional Raman techniques
and demonstrate its benefits for ferroelectric domain wall analysis. Using the
example of poled lithium niobate, we compare the spectral output of both techniques
in terms of domain wall signatures and imaging capabilities. We extract the Raman-like
resonant part of the coherent anti-Stokes signal via a Kramers–Kronig-based phase
retrieval algorithm and compare the raw and phase-retrieved signals to SR characteristics.
Finally, we propose a mechanism for the observed domain wall signal strength that
resembles a Čerenkov-like behavior, in close analogy to domain wall signatures
obtained by second-harmonic generation imaging. We, thus, lay here the foundations
for future investigations on other poled ferroelectric crystals using B-CARS.
article_number: '162901'
article_type: original
author:
- first_name: Sven
full_name: Reitzig, Sven
last_name: Reitzig
- first_name: Franz
full_name: Hempel, Franz
last_name: Hempel
- first_name: Julius
full_name: Ratzenberger, Julius
last_name: Ratzenberger
- first_name: Peter A.
full_name: Hegarty, Peter A.
last_name: Hegarty
- first_name: Zeeshan H.
full_name: Amber, Zeeshan H.
last_name: Amber
- first_name: Robin
full_name: Buschbeck, Robin
last_name: Buschbeck
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: Lukas M.
full_name: Eng, Lukas M.
last_name: Eng
citation:
ama: Reitzig S, Hempel F, Ratzenberger J, et al. High-speed hyperspectral imaging
of ferroelectric domain walls using broadband coherent anti-Stokes Raman scattering.
Applied Physics Letters. 2022;120(16). doi:10.1063/5.0086029
apa: Reitzig, S., Hempel, F., Ratzenberger, J., Hegarty, P. A., Amber, Z. H., Buschbeck,
R., Rüsing, M., & Eng, L. M. (2022). High-speed hyperspectral imaging of ferroelectric
domain walls using broadband coherent anti-Stokes Raman scattering. Applied
Physics Letters, 120(16), Article 162901. https://doi.org/10.1063/5.0086029
bibtex: '@article{Reitzig_Hempel_Ratzenberger_Hegarty_Amber_Buschbeck_Rüsing_Eng_2022,
title={High-speed hyperspectral imaging of ferroelectric domain walls using broadband
coherent anti-Stokes Raman scattering}, volume={120}, DOI={10.1063/5.0086029},
number={16162901}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Reitzig, Sven and Hempel, Franz and Ratzenberger, Julius and Hegarty,
Peter A. and Amber, Zeeshan H. and Buschbeck, Robin and Rüsing, Michael and Eng,
Lukas M.}, year={2022} }'
chicago: Reitzig, Sven, Franz Hempel, Julius Ratzenberger, Peter A. Hegarty, Zeeshan
H. Amber, Robin Buschbeck, Michael Rüsing, and Lukas M. Eng. “High-Speed Hyperspectral
Imaging of Ferroelectric Domain Walls Using Broadband Coherent Anti-Stokes Raman
Scattering.” Applied Physics Letters 120, no. 16 (2022). https://doi.org/10.1063/5.0086029.
ieee: 'S. Reitzig et al., “High-speed hyperspectral imaging of ferroelectric
domain walls using broadband coherent anti-Stokes Raman scattering,” Applied
Physics Letters, vol. 120, no. 16, Art. no. 162901, 2022, doi: 10.1063/5.0086029.'
mla: Reitzig, Sven, et al. “High-Speed Hyperspectral Imaging of Ferroelectric Domain
Walls Using Broadband Coherent Anti-Stokes Raman Scattering.” Applied Physics
Letters, vol. 120, no. 16, 162901, AIP Publishing, 2022, doi:10.1063/5.0086029.
short: S. Reitzig, F. Hempel, J. Ratzenberger, P.A. Hegarty, Z.H. Amber, R. Buschbeck,
M. Rüsing, L.M. Eng, Applied Physics Letters 120 (2022).
date_created: 2023-10-11T08:50:06Z
date_updated: 2023-10-11T08:50:42Z
doi: 10.1063/5.0086029
extern: '1'
intvolume: ' 120'
issue: '16'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
status: public
title: High-speed hyperspectral imaging of ferroelectric domain walls using broadband
coherent anti-Stokes Raman scattering
type: journal_article
user_id: '22501'
volume: 120
year: '2022'
...
---
_id: '27099'
abstract:
- lang: eng
text: In our work, we have engineered low capacitance single quantum dot photodiodes
as sensor devices for the optoelectronic sampling of ultrafast electric signals.
By the Stark effect, a time-dependent electric signal is converted into a time-dependent
shift of the transition energy. This shift is measured accurately by resonant
ps laser spectroscopy with photocurrent detection. In our experiments, we sample
the laser synchronous output pulse of an ultrafast CMOS circuit with high resolution.
With our quantum dot sensor device, we were able to sample transients below 20
ps with a voltage resolution in the mV-range.
author:
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Sebastian
full_name: Krehs, Sebastian
last_name: Krehs
- first_name: Dustin
full_name: Siebert, Dustin
last_name: Siebert
- first_name: Nand Lal
full_name: Sharma, Nand Lal
last_name: Sharma
- first_name: Timo
full_name: Langer, Timo
last_name: Langer
- first_name: Björn
full_name: Jonas, Björn
last_name: Jonas
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Widhalm A, Krehs S, Siebert D, et al. Optoelectronic sampling of ultrafast
electric transients with single quantum dots. Applied Physics Letters.
2021;119:181109. doi:10.1063/5.0061358
apa: Widhalm, A., Krehs, S., Siebert, D., Sharma, N. L., Langer, T., Jonas, B.,
Reuter, D., Thiede, A., Förstner, J., & Zrenner, A. (2021). Optoelectronic
sampling of ultrafast electric transients with single quantum dots. Applied
Physics Letters, 119, 181109. https://doi.org/10.1063/5.0061358
bibtex: '@article{Widhalm_Krehs_Siebert_Sharma_Langer_Jonas_Reuter_Thiede_Förstner_Zrenner_2021,
title={Optoelectronic sampling of ultrafast electric transients with single quantum
dots}, volume={119}, DOI={10.1063/5.0061358},
journal={Applied Physics Letters}, author={Widhalm, Alex and Krehs, Sebastian
and Siebert, Dustin and Sharma, Nand Lal and Langer, Timo and Jonas, Björn and
Reuter, Dirk and Thiede, Andreas and Förstner, Jens and Zrenner, Artur}, year={2021},
pages={181109} }'
chicago: 'Widhalm, Alex, Sebastian Krehs, Dustin Siebert, Nand Lal Sharma, Timo
Langer, Björn Jonas, Dirk Reuter, Andreas Thiede, Jens Förstner, and Artur Zrenner.
“Optoelectronic Sampling of Ultrafast Electric Transients with Single Quantum
Dots.” Applied Physics Letters 119 (2021): 181109. https://doi.org/10.1063/5.0061358.'
ieee: 'A. Widhalm et al., “Optoelectronic sampling of ultrafast electric
transients with single quantum dots,” Applied Physics Letters, vol. 119,
p. 181109, 2021, doi: 10.1063/5.0061358.'
mla: Widhalm, Alex, et al. “Optoelectronic Sampling of Ultrafast Electric Transients
with Single Quantum Dots.” Applied Physics Letters, vol. 119, 2021, p.
181109, doi:10.1063/5.0061358.
short: A. Widhalm, S. Krehs, D. Siebert, N.L. Sharma, T. Langer, B. Jonas, D. Reuter,
A. Thiede, J. Förstner, A. Zrenner, Applied Physics Letters 119 (2021) 181109.
date_created: 2021-11-03T10:32:03Z
date_updated: 2023-01-24T11:11:54Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '61'
- _id: '51'
doi: 10.1063/5.0061358
file:
- access_level: local
content_type: application/pdf
creator: fossie
date_created: 2021-11-04T13:46:27Z
date_updated: 2021-11-04T13:46:27Z
embargo: 2022-11-04
embargo_to: open_access
file_id: '27157'
file_name: 2021-11 Widhalm - APL - Optoelectronic sampling of ultrafast electric
transients with single quantum dots (published version).pdf
file_size: 1999652
relation: main_file
file_date_updated: 2021-11-04T13:46:27Z
has_accepted_license: '1'
intvolume: ' 119'
keyword:
- tet_topic_qd
language:
- iso: eng
page: '181109'
project:
- _id: '74'
name: TRR 142 - Subproject C4
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
- _id: '60'
name: TRR 142 - Subproject A3
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Optoelectronic sampling of ultrafast electric transients with single quantum
dots
type: journal_article
user_id: '158'
volume: 119
year: '2021'
...
---
_id: '17433'
article_number: '032102'
author:
- first_name: D. Q.
full_name: Wang, D. Q.
last_name: Wang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
citation:
ama: Wang DQ, Reuter D, Wieck AD, Hamilton AR, Klochan O. Two-dimensional lateral
surface superlattices in GaAs heterostructures with independent control of carrier
density and modulation potential. Applied Physics Letters. 2020. doi:10.1063/5.0009462
apa: Wang, D. Q., Reuter, D., Wieck, A. D., Hamilton, A. R., & Klochan, O. (2020).
Two-dimensional lateral surface superlattices in GaAs heterostructures with independent
control of carrier density and modulation potential. Applied Physics Letters.
https://doi.org/10.1063/5.0009462
bibtex: '@article{Wang_Reuter_Wieck_Hamilton_Klochan_2020, title={Two-dimensional
lateral surface superlattices in GaAs heterostructures with independent control
of carrier density and modulation potential}, DOI={10.1063/5.0009462},
number={032102}, journal={Applied Physics Letters}, author={Wang, D. Q. and Reuter,
Dirk and Wieck, A. D. and Hamilton, A. R. and Klochan, O.}, year={2020} }'
chicago: Wang, D. Q., Dirk Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan.
“Two-Dimensional Lateral Surface Superlattices in GaAs Heterostructures with Independent
Control of Carrier Density and Modulation Potential.” Applied Physics Letters,
2020. https://doi.org/10.1063/5.0009462.
ieee: D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, and O. Klochan, “Two-dimensional
lateral surface superlattices in GaAs heterostructures with independent control
of carrier density and modulation potential,” Applied Physics Letters,
2020.
mla: Wang, D. Q., et al. “Two-Dimensional Lateral Surface Superlattices in GaAs
Heterostructures with Independent Control of Carrier Density and Modulation Potential.”
Applied Physics Letters, 032102, 2020, doi:10.1063/5.0009462.
short: D.Q. Wang, D. Reuter, A.D. Wieck, A.R. Hamilton, O. Klochan, Applied Physics
Letters (2020).
date_created: 2020-07-29T08:21:01Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0009462
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Two-dimensional lateral surface superlattices in GaAs heterostructures with
independent control of carrier density and modulation potential
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17995'
article_number: '063102'
author:
- first_name: Christian
full_name: Riha, Christian
last_name: Riha
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Olivio
full_name: Chiatti, Olivio
last_name: Chiatti
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
citation:
ama: Riha C, Buchholz SS, Chiatti O, Wieck AD, Reuter D, Fischer SF. Excess noise
in Al x Ga 1 − xAs/GaAs based quantum rings. Applied Physics Letters.
2020. doi:10.1063/5.0002247
apa: Riha, C., Buchholz, S. S., Chiatti, O., Wieck, A. D., Reuter, D., & Fischer,
S. F. (2020). Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings.
Applied Physics Letters. https://doi.org/10.1063/5.0002247
bibtex: '@article{Riha_Buchholz_Chiatti_Wieck_Reuter_Fischer_2020, title={Excess
noise in Al x Ga 1 − xAs/GaAs based quantum rings}, DOI={10.1063/5.0002247},
number={063102}, journal={Applied Physics Letters}, author={Riha, Christian and
Buchholz, Sven S. and Chiatti, Olivio and Wieck, Andreas D. and Reuter, Dirk and
Fischer, Saskia F.}, year={2020} }'
chicago: Riha, Christian, Sven S. Buchholz, Olivio Chiatti, Andreas D. Wieck, Dirk
Reuter, and Saskia F. Fischer. “Excess Noise in Al x Ga 1 − XAs/GaAs Based
Quantum Rings.” Applied Physics Letters, 2020. https://doi.org/10.1063/5.0002247.
ieee: C. Riha, S. S. Buchholz, O. Chiatti, A. D. Wieck, D. Reuter, and S. F. Fischer,
“Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings,” Applied
Physics Letters, 2020.
mla: Riha, Christian, et al. “Excess Noise in Al x Ga 1 − XAs/GaAs Based
Quantum Rings.” Applied Physics Letters, 063102, 2020, doi:10.1063/5.0002247.
short: C. Riha, S.S. Buchholz, O. Chiatti, A.D. Wieck, D. Reuter, S.F. Fischer,
Applied Physics Letters (2020).
date_created: 2020-08-17T06:48:46Z
date_updated: 2022-01-06T06:53:24Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/5.0002247
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Excess noise in Al x Ga 1 − xAs/GaAs based quantum rings
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '17322'
author:
- first_name: Amlan
full_name: Mukherjee, Amlan
last_name: Mukherjee
- first_name: Alex
full_name: Widhalm, Alex
last_name: Widhalm
- first_name: Dustin
full_name: Siebert, Dustin
last_name: Siebert
- first_name: Sebastian
full_name: Krehs, Sebastian
last_name: Krehs
- first_name: Nandlal
full_name: Sharma, Nandlal
last_name: Sharma
- first_name: Andreas
full_name: Thiede, Andreas
id: '538'
last_name: Thiede
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Mukherjee A, Widhalm A, Siebert D, et al. Electrically controlled rapid adiabatic
passage in a single quantum dot. Applied Physics Letters. 2020;116:251103.
doi:10.1063/5.0012257
apa: Mukherjee, A., Widhalm, A., Siebert, D., Krehs, S., Sharma, N., Thiede, A.,
Reuter, D., Förstner, J., & Zrenner, A. (2020). Electrically controlled rapid
adiabatic passage in a single quantum dot. Applied Physics Letters, 116,
251103. https://doi.org/10.1063/5.0012257
bibtex: '@article{Mukherjee_Widhalm_Siebert_Krehs_Sharma_Thiede_Reuter_Förstner_Zrenner_2020,
title={Electrically controlled rapid adiabatic passage in a single quantum dot},
volume={116}, DOI={10.1063/5.0012257},
journal={Applied Physics Letters}, author={Mukherjee, Amlan and Widhalm, Alex
and Siebert, Dustin and Krehs, Sebastian and Sharma, Nandlal and Thiede, Andreas
and Reuter, Dirk and Förstner, Jens and Zrenner, Artur}, year={2020}, pages={251103}
}'
chicago: 'Mukherjee, Amlan, Alex Widhalm, Dustin Siebert, Sebastian Krehs, Nandlal
Sharma, Andreas Thiede, Dirk Reuter, Jens Förstner, and Artur Zrenner. “Electrically
Controlled Rapid Adiabatic Passage in a Single Quantum Dot.” Applied Physics
Letters 116 (2020): 251103. https://doi.org/10.1063/5.0012257.'
ieee: 'A. Mukherjee et al., “Electrically controlled rapid adiabatic passage
in a single quantum dot,” Applied Physics Letters, vol. 116, p. 251103,
2020, doi: 10.1063/5.0012257.'
mla: Mukherjee, Amlan, et al. “Electrically Controlled Rapid Adiabatic Passage in
a Single Quantum Dot.” Applied Physics Letters, vol. 116, 2020, p. 251103,
doi:10.1063/5.0012257.
short: A. Mukherjee, A. Widhalm, D. Siebert, S. Krehs, N. Sharma, A. Thiede, D.
Reuter, J. Förstner, A. Zrenner, Applied Physics Letters 116 (2020) 251103.
date_created: 2020-06-25T12:31:42Z
date_updated: 2023-01-24T11:12:09Z
ddc:
- '530'
department:
- _id: '61'
- _id: '230'
- _id: '429'
- _id: '51'
doi: 10.1063/5.0012257
file:
- access_level: request
content_type: application/pdf
creator: fossie
date_created: 2020-06-25T12:45:04Z
date_updated: 2022-01-06T06:53:07Z
embargo: 2021-06-25
embargo_to: open_access
file_id: '17325'
file_name: 2020-06 Widhalm - APL - Electrically controlled RAP in single QD (official).pdf
file_size: 1359326
relation: main_file
file_date_updated: 2022-01-06T06:53:07Z
has_accepted_license: '1'
intvolume: ' 116'
keyword:
- tet_topic_qd
language:
- iso: eng
page: '251103'
project:
- _id: '56'
name: TRR 142 - Project Area C
- _id: '74'
name: TRR 142 - Subproject C4
- _id: '53'
name: TRR 142
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electrically controlled rapid adiabatic passage in a single quantum dot
type: journal_article
user_id: '158'
volume: 116
year: '2020'
...
---
_id: '40271'
article_number: '024001'
author:
- first_name: Panagiotis
full_name: Vergyris, Panagiotis
last_name: Vergyris
- first_name: Charles
full_name: Babin, Charles
last_name: Babin
- first_name: Raphael
full_name: Nold, Raphael
last_name: Nold
- first_name: Elie
full_name: Gouzien, Elie
last_name: Gouzien
- first_name: Harald
full_name: Herrmann, Harald
id: '216'
last_name: Herrmann
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
- first_name: Olivier
full_name: Alibart, Olivier
last_name: Alibart
- first_name: Sébastien
full_name: Tanzilli, Sébastien
last_name: Tanzilli
- first_name: Florian
full_name: Kaiser, Florian
last_name: Kaiser
citation:
ama: Vergyris P, Babin C, Nold R, et al. Two-photon phase-sensing with single-photon
detection. Applied Physics Letters. 2020;117(2). doi:10.1063/5.0009527
apa: Vergyris, P., Babin, C., Nold, R., Gouzien, E., Herrmann, H., Silberhorn, C.,
Alibart, O., Tanzilli, S., & Kaiser, F. (2020). Two-photon phase-sensing with
single-photon detection. Applied Physics Letters, 117(2), Article
024001. https://doi.org/10.1063/5.0009527
bibtex: '@article{Vergyris_Babin_Nold_Gouzien_Herrmann_Silberhorn_Alibart_Tanzilli_Kaiser_2020,
title={Two-photon phase-sensing with single-photon detection}, volume={117}, DOI={10.1063/5.0009527}, number={2024001},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Vergyris,
Panagiotis and Babin, Charles and Nold, Raphael and Gouzien, Elie and Herrmann,
Harald and Silberhorn, Christine and Alibart, Olivier and Tanzilli, Sébastien
and Kaiser, Florian}, year={2020} }'
chicago: Vergyris, Panagiotis, Charles Babin, Raphael Nold, Elie Gouzien, Harald
Herrmann, Christine Silberhorn, Olivier Alibart, Sébastien Tanzilli, and Florian
Kaiser. “Two-Photon Phase-Sensing with Single-Photon Detection.” Applied Physics
Letters 117, no. 2 (2020). https://doi.org/10.1063/5.0009527.
ieee: 'P. Vergyris et al., “Two-photon phase-sensing with single-photon detection,”
Applied Physics Letters, vol. 117, no. 2, Art. no. 024001, 2020, doi: 10.1063/5.0009527.'
mla: Vergyris, Panagiotis, et al. “Two-Photon Phase-Sensing with Single-Photon Detection.”
Applied Physics Letters, vol. 117, no. 2, 024001, AIP Publishing, 2020,
doi:10.1063/5.0009527.
short: P. Vergyris, C. Babin, R. Nold, E. Gouzien, H. Herrmann, C. Silberhorn, O.
Alibart, S. Tanzilli, F. Kaiser, Applied Physics Letters 117 (2020).
date_created: 2023-01-26T10:17:33Z
date_updated: 2023-01-26T10:28:45Z
doi: 10.1063/5.0009527
intvolume: ' 117'
issue: '2'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Two-photon phase-sensing with single-photon detection
type: journal_article
user_id: '216'
volume: 117
year: '2020'
...
---
_id: '21029'
article_number: '031110'
author:
- first_name: Markus
full_name: Allgaier, Markus
last_name: Allgaier
- first_name: Vahid
full_name: Ansari, Vahid
last_name: Ansari
- first_name: Christof
full_name: Eigner, Christof
id: '13244'
last_name: Eigner
orcid: https://orcid.org/0000-0002-5693-3083
- first_name: Viktor
full_name: Quiring, Viktor
last_name: Quiring
- first_name: Raimund
full_name: Ricken, Raimund
last_name: Ricken
- first_name: John Matthew
full_name: Donohue, John Matthew
last_name: Donohue
- first_name: Thomas
full_name: Czerniuk, Thomas
last_name: Czerniuk
- first_name: Marc
full_name: Aßmann, Marc
last_name: Aßmann
- first_name: Manfred
full_name: Bayer, Manfred
last_name: Bayer
- first_name: Benjamin
full_name: Brecht, Benjamin
id: '27150'
last_name: Brecht
orcid: '0000-0003-4140-0556 '
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Allgaier M, Ansari V, Eigner C, et al. Streak camera imaging of single photons
at telecom wavelength. Applied Physics Letters. 2018;112. doi:10.1063/1.5004110
apa: Allgaier, M., Ansari, V., Eigner, C., Quiring, V., Ricken, R., Donohue, J.
M., Czerniuk, T., Aßmann, M., Bayer, M., Brecht, B., & Silberhorn, C. (2018).
Streak camera imaging of single photons at telecom wavelength. Applied Physics
Letters, 112, Article 031110. https://doi.org/10.1063/1.5004110
bibtex: '@article{Allgaier_Ansari_Eigner_Quiring_Ricken_Donohue_Czerniuk_Aßmann_Bayer_Brecht_et
al._2018, title={Streak camera imaging of single photons at telecom wavelength},
volume={112}, DOI={10.1063/1.5004110},
number={031110}, journal={Applied Physics Letters}, author={Allgaier, Markus and
Ansari, Vahid and Eigner, Christof and Quiring, Viktor and Ricken, Raimund and
Donohue, John Matthew and Czerniuk, Thomas and Aßmann, Marc and Bayer, Manfred
and Brecht, Benjamin and et al.}, year={2018} }'
chicago: Allgaier, Markus, Vahid Ansari, Christof Eigner, Viktor Quiring, Raimund
Ricken, John Matthew Donohue, Thomas Czerniuk, et al. “Streak Camera Imaging of
Single Photons at Telecom Wavelength.” Applied Physics Letters 112 (2018).
https://doi.org/10.1063/1.5004110.
ieee: 'M. Allgaier et al., “Streak camera imaging of single photons at telecom
wavelength,” Applied Physics Letters, vol. 112, Art. no. 031110, 2018,
doi: 10.1063/1.5004110.'
mla: Allgaier, Markus, et al. “Streak Camera Imaging of Single Photons at Telecom
Wavelength.” Applied Physics Letters, vol. 112, 031110, 2018, doi:10.1063/1.5004110.
short: M. Allgaier, V. Ansari, C. Eigner, V. Quiring, R. Ricken, J.M. Donohue, T.
Czerniuk, M. Aßmann, M. Bayer, B. Brecht, C. Silberhorn, Applied Physics Letters
112 (2018).
date_created: 2021-01-20T08:41:05Z
date_updated: 2023-01-27T08:52:39Z
department:
- _id: '15'
- _id: '288'
doi: 10.1063/1.5004110
intvolume: ' 112'
language:
- iso: eng
project:
- _id: '71'
name: TRR 142 - Subproject C1
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Streak camera imaging of single photons at telecom wavelength
type: journal_article
user_id: '26263'
volume: 112
year: '2018'
...
---
_id: '23630'
author:
- first_name: Ning
full_name: Liu, Ning
last_name: Liu
- first_name: Hans-Georg
full_name: Steinrück, Hans-Georg
id: '84268'
last_name: Steinrück
orcid: 0000-0001-6373-0877
- first_name: Andres
full_name: Osvet, Andres
last_name: Osvet
- first_name: Yuyun
full_name: Yang, Yuyun
last_name: Yang
- first_name: Patrik
full_name: Schmuki, Patrik
last_name: Schmuki
citation:
ama: 'Liu N, Steinrück H-G, Osvet A, Yang Y, Schmuki P. Noble metal free photocatalytic
H2 generation on black TiO2: On the influence of crystal facets vs. crystal damage.
Applied Physics Letters. 2017;110:072102. doi:10.1063/1.4976010'
apa: 'Liu, N., Steinrück, H.-G., Osvet, A., Yang, Y., & Schmuki, P. (2017).
Noble metal free photocatalytic H2 generation on black TiO2: On the influence
of crystal facets vs. crystal damage. Applied Physics Letters, 110,
072102. https://doi.org/10.1063/1.4976010'
bibtex: '@article{Liu_Steinrück_Osvet_Yang_Schmuki_2017, title={Noble metal free
photocatalytic H2 generation on black TiO2: On the influence of crystal facets
vs. crystal damage}, volume={110}, DOI={10.1063/1.4976010},
journal={Applied Physics Letters}, author={Liu, Ning and Steinrück, Hans-Georg
and Osvet, Andres and Yang, Yuyun and Schmuki, Patrik}, year={2017}, pages={072102}
}'
chicago: 'Liu, Ning, Hans-Georg Steinrück, Andres Osvet, Yuyun Yang, and Patrik
Schmuki. “Noble Metal Free Photocatalytic H2 Generation on Black TiO2: On the
Influence of Crystal Facets vs. Crystal Damage.” Applied Physics Letters
110 (2017): 072102. https://doi.org/10.1063/1.4976010.'
ieee: 'N. Liu, H.-G. Steinrück, A. Osvet, Y. Yang, and P. Schmuki, “Noble metal
free photocatalytic H2 generation on black TiO2: On the influence of crystal facets
vs. crystal damage,” Applied Physics Letters, vol. 110, p. 072102, 2017,
doi: 10.1063/1.4976010.'
mla: 'Liu, Ning, et al. “Noble Metal Free Photocatalytic H2 Generation on Black
TiO2: On the Influence of Crystal Facets vs. Crystal Damage.” Applied Physics
Letters, vol. 110, 2017, p. 072102, doi:10.1063/1.4976010.'
short: N. Liu, H.-G. Steinrück, A. Osvet, Y. Yang, P. Schmuki, Applied Physics Letters
110 (2017) 072102.
date_created: 2021-09-01T09:47:45Z
date_updated: 2022-01-06T06:55:57Z
department:
- _id: '633'
doi: 10.1063/1.4976010
intvolume: ' 110'
language:
- iso: eng
page: '072102'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: 'Noble metal free photocatalytic H2 generation on black TiO2: On the influence
of crystal facets vs. crystal damage'
type: journal_article
user_id: '84268'
volume: 110
year: '2017'
...
---
_id: '13361'
article_number: '061108'
author:
- first_name: O.
full_name: Lafont, O.
last_name: Lafont
- first_name: S. M. H.
full_name: Luk, S. M. H.
last_name: Luk
- first_name: P.
full_name: Lewandowski, P.
last_name: Lewandowski
- first_name: N. H.
full_name: Kwong, N. H.
last_name: Kwong
- first_name: P. T.
full_name: Leung, P. T.
last_name: Leung
- first_name: E.
full_name: Galopin, E.
last_name: Galopin
- first_name: A.
full_name: Lemaitre, A.
last_name: Lemaitre
- first_name: J.
full_name: Tignon, J.
last_name: Tignon
- first_name: Stefan
full_name: Schumacher, Stefan
id: '27271'
last_name: Schumacher
orcid: 0000-0003-4042-4951
- first_name: E.
full_name: Baudin, E.
last_name: Baudin
- first_name: R.
full_name: Binder, R.
last_name: Binder
citation:
ama: Lafont O, Luk SMH, Lewandowski P, et al. Controlling the optical spin Hall
effect with light. Applied Physics Letters. 2017. doi:10.1063/1.4975681
apa: Lafont, O., Luk, S. M. H., Lewandowski, P., Kwong, N. H., Leung, P. T., Galopin,
E., … Binder, R. (2017). Controlling the optical spin Hall effect with light.
Applied Physics Letters. https://doi.org/10.1063/1.4975681
bibtex: '@article{Lafont_Luk_Lewandowski_Kwong_Leung_Galopin_Lemaitre_Tignon_Schumacher_Baudin_et
al._2017, title={Controlling the optical spin Hall effect with light}, DOI={10.1063/1.4975681}, number={061108},
journal={Applied Physics Letters}, author={Lafont, O. and Luk, S. M. H. and Lewandowski,
P. and Kwong, N. H. and Leung, P. T. and Galopin, E. and Lemaitre, A. and Tignon,
J. and Schumacher, Stefan and Baudin, E. and et al.}, year={2017} }'
chicago: Lafont, O., S. M. H. Luk, P. Lewandowski, N. H. Kwong, P. T. Leung, E.
Galopin, A. Lemaitre, et al. “Controlling the Optical Spin Hall Effect with Light.”
Applied Physics Letters, 2017. https://doi.org/10.1063/1.4975681.
ieee: O. Lafont et al., “Controlling the optical spin Hall effect with light,”
Applied Physics Letters, 2017.
mla: Lafont, O., et al. “Controlling the Optical Spin Hall Effect with Light.” Applied
Physics Letters, 061108, 2017, doi:10.1063/1.4975681.
short: O. Lafont, S.M.H. Luk, P. Lewandowski, N.H. Kwong, P.T. Leung, E. Galopin,
A. Lemaitre, J. Tignon, S. Schumacher, E. Baudin, R. Binder, Applied Physics Letters
(2017).
date_created: 2019-09-19T14:22:46Z
date_updated: 2022-01-06T06:51:33Z
department:
- _id: '15'
- _id: '170'
- _id: '297'
doi: 10.1063/1.4975681
language:
- iso: eng
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Controlling the optical spin Hall effect with light
type: journal_article
user_id: '16199'
year: '2017'
...
---
_id: '22568'
article_number: '081603'
author:
- first_name: V.
full_name: Layes, V.
last_name: Layes
- first_name: S.
full_name: Monje, S.
last_name: Monje
- first_name: C.
full_name: Corbella, C.
last_name: Corbella
- first_name: J.
full_name: Trieschmann, J.
last_name: Trieschmann
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: A.
full_name: von Keudell, A.
last_name: von Keudell
citation:
ama: Layes V, Monje S, Corbella C, Trieschmann J, de los Arcos de Pedro MT, von
Keudell A. Species transport on the target during high power impulse magnetron
sputtering. Applied Physics Letters. Published online 2017. doi:10.1063/1.4976999
apa: Layes, V., Monje, S., Corbella, C., Trieschmann, J., de los Arcos de Pedro,
M. T., & von Keudell, A. (2017). Species transport on the target during high
power impulse magnetron sputtering. Applied Physics Letters, Article 081603.
https://doi.org/10.1063/1.4976999
bibtex: '@article{Layes_Monje_Corbella_Trieschmann_de los Arcos de Pedro_von Keudell_2017,
title={Species transport on the target during high power impulse magnetron sputtering},
DOI={10.1063/1.4976999}, number={081603},
journal={Applied Physics Letters}, author={Layes, V. and Monje, S. and Corbella,
C. and Trieschmann, J. and de los Arcos de Pedro, Maria Teresa and von Keudell,
A.}, year={2017} }'
chicago: Layes, V., S. Monje, C. Corbella, J. Trieschmann, Maria Teresa de los Arcos
de Pedro, and A. von Keudell. “Species Transport on the Target during High Power
Impulse Magnetron Sputtering.” Applied Physics Letters, 2017. https://doi.org/10.1063/1.4976999.
ieee: 'V. Layes, S. Monje, C. Corbella, J. Trieschmann, M. T. de los Arcos de Pedro,
and A. von Keudell, “Species transport on the target during high power impulse
magnetron sputtering,” Applied Physics Letters, Art. no. 081603, 2017,
doi: 10.1063/1.4976999.'
mla: Layes, V., et al. “Species Transport on the Target during High Power Impulse
Magnetron Sputtering.” Applied Physics Letters, 081603, 2017, doi:10.1063/1.4976999.
short: V. Layes, S. Monje, C. Corbella, J. Trieschmann, M.T. de los Arcos de Pedro,
A. von Keudell, Applied Physics Letters (2017).
date_created: 2021-07-07T09:08:37Z
date_updated: 2023-01-24T08:13:37Z
department:
- _id: '302'
doi: 10.1063/1.4976999
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Species transport on the target during high power impulse magnetron sputtering
type: journal_article
user_id: '54556'
year: '2017'
...
---
_id: '39674'
article_number: '081107'
author:
- first_name: B.
full_name: Atorf, B.
last_name: Atorf
- first_name: H.
full_name: Rasouli, H.
last_name: Rasouli
- first_name: G.
full_name: Nordendorf, G.
last_name: Nordendorf
- first_name: D.
full_name: Wilkes, D.
last_name: Wilkes
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Atorf B, Rasouli H, Nordendorf G, Wilkes D, Kitzerow H-S. Near infrared Kerr
effect and description of field-induced phase transitions in polymer-stabilized
blue phase liquid crystals. Applied Physics Letters. 2016;108(8). doi:10.1063/1.4942604
apa: Atorf, B., Rasouli, H., Nordendorf, G., Wilkes, D., & Kitzerow, H.-S. (2016).
Near infrared Kerr effect and description of field-induced phase transitions in
polymer-stabilized blue phase liquid crystals. Applied Physics Letters,
108(8), Article 081107. https://doi.org/10.1063/1.4942604
bibtex: '@article{Atorf_Rasouli_Nordendorf_Wilkes_Kitzerow_2016, title={Near infrared
Kerr effect and description of field-induced phase transitions in polymer-stabilized
blue phase liquid crystals}, volume={108}, DOI={10.1063/1.4942604},
number={8081107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Atorf, B. and Rasouli, H. and Nordendorf, G. and Wilkes, D. and Kitzerow,
Heinz-Siegfried}, year={2016} }'
chicago: Atorf, B., H. Rasouli, G. Nordendorf, D. Wilkes, and Heinz-Siegfried Kitzerow.
“Near Infrared Kerr Effect and Description of Field-Induced Phase Transitions
in Polymer-Stabilized Blue Phase Liquid Crystals.” Applied Physics Letters
108, no. 8 (2016). https://doi.org/10.1063/1.4942604.
ieee: 'B. Atorf, H. Rasouli, G. Nordendorf, D. Wilkes, and H.-S. Kitzerow, “Near
infrared Kerr effect and description of field-induced phase transitions in polymer-stabilized
blue phase liquid crystals,” Applied Physics Letters, vol. 108, no. 8,
Art. no. 081107, 2016, doi: 10.1063/1.4942604.'
mla: Atorf, B., et al. “Near Infrared Kerr Effect and Description of Field-Induced
Phase Transitions in Polymer-Stabilized Blue Phase Liquid Crystals.” Applied
Physics Letters, vol. 108, no. 8, 081107, AIP Publishing, 2016, doi:10.1063/1.4942604.
short: B. Atorf, H. Rasouli, G. Nordendorf, D. Wilkes, H.-S. Kitzerow, Applied Physics
Letters 108 (2016).
date_created: 2023-01-24T17:51:24Z
date_updated: 2023-01-24T17:51:54Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4942604
intvolume: ' 108'
issue: '8'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Near infrared Kerr effect and description of field-induced phase transitions
in polymer-stabilized blue phase liquid crystals
type: journal_article
user_id: '254'
volume: 108
year: '2016'
...
---
_id: '4237'
abstract:
- lang: eng
text: "We report the fabrication of periodically poled domain patterns in x-cut
lithium niobate thin-film.\r\nHere, thin films on insulator have drawn particular
attention due to their intrinsic waveguiding\r\nproperties offering high mode
confinement and smaller devices compared to in-diffused waveguides\r\nin bulk
material. In contrast to z-cut thin film lithium niobate, the x-cut geometry does
not\r\nrequire back electrodes for poling. Further, the x-cut geometry grants
direct access to the largest\r\nnonlinear and electro-optical tensor element,
which overall promises smaller devices. The domain\r\ninversion was realized via
electric field poling utilizing deposited aluminum top electrodes on a\r\nstack
of LN thin film/SiO2 layer/Bulk LN, which were patterned by optical lithography.
The periodic\r\ndomain inversion was verified by non-invasive confocal second
harmonic microscopy. Our\r\nresults show domain patterns in accordance to the
electrode mask layout. The second harmonic signatures\r\ncan be interpreted in
terms of spatially, overlapping domain filaments which start their\r\ngrowth on
the þz side."
article_number: '152902'
article_type: original
author:
- first_name: P.
full_name: Mackwitz, P.
last_name: Mackwitz
- first_name: Michael
full_name: Rüsing, Michael
id: '22501'
last_name: Rüsing
orcid: 0000-0003-4682-4577
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: A.
full_name: Widhalm, A.
last_name: Widhalm
- first_name: K.
full_name: Müller, K.
last_name: Müller
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Mackwitz P, Rüsing M, Berth G, Widhalm A, Müller K, Zrenner A. Periodic domain
inversion in x-cut single-crystal lithium niobate thin film. Applied Physics
Letters. 2016;108(15). doi:10.1063/1.4946010
apa: Mackwitz, P., Rüsing, M., Berth, G., Widhalm, A., Müller, K., & Zrenner,
A. (2016). Periodic domain inversion in x-cut single-crystal lithium niobate thin
film. Applied Physics Letters, 108(15), Article 152902. https://doi.org/10.1063/1.4946010
bibtex: '@article{Mackwitz_Rüsing_Berth_Widhalm_Müller_Zrenner_2016, title={Periodic
domain inversion in x-cut single-crystal lithium niobate thin film}, volume={108},
DOI={10.1063/1.4946010}, number={15152902},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mackwitz,
P. and Rüsing, Michael and Berth, Gerhard and Widhalm, A. and Müller, K. and Zrenner,
Artur}, year={2016} }'
chicago: Mackwitz, P., Michael Rüsing, Gerhard Berth, A. Widhalm, K. Müller, and
Artur Zrenner. “Periodic Domain Inversion in X-Cut Single-Crystal Lithium Niobate
Thin Film.” Applied Physics Letters 108, no. 15 (2016). https://doi.org/10.1063/1.4946010.
ieee: 'P. Mackwitz, M. Rüsing, G. Berth, A. Widhalm, K. Müller, and A. Zrenner,
“Periodic domain inversion in x-cut single-crystal lithium niobate thin film,”
Applied Physics Letters, vol. 108, no. 15, Art. no. 152902, 2016, doi:
10.1063/1.4946010.'
mla: Mackwitz, P., et al. “Periodic Domain Inversion in X-Cut Single-Crystal Lithium
Niobate Thin Film.” Applied Physics Letters, vol. 108, no. 15, 152902,
AIP Publishing, 2016, doi:10.1063/1.4946010.
short: P. Mackwitz, M. Rüsing, G. Berth, A. Widhalm, K. Müller, A. Zrenner, Applied
Physics Letters 108 (2016).
date_created: 2018-08-29T08:16:14Z
date_updated: 2023-10-09T08:05:45Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4946010
intvolume: ' 108'
issue: '15'
language:
- iso: eng
project:
- _id: '53'
grant_number: '231447078'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '68'
grant_number: '231447078'
name: TRR 142 - Subproject B3
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Periodic domain inversion in x-cut single-crystal lithium niobate thin film
type: journal_article
user_id: '14931'
volume: 108
year: '2016'
...
---
_id: '7217'
article_number: '211101'
author:
- first_name: Thorben
full_name: Jostmeier, Thorben
last_name: Jostmeier
- first_name: Tobias
full_name: Wecker, Tobias
last_name: Wecker
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Markus
full_name: Betz, Markus
last_name: Betz
citation:
ama: Jostmeier T, Wecker T, Reuter D, As DJ, Betz M. Ultrafast carrier dynamics
and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice. Applied
Physics Letters. 2015;107(21). doi:10.1063/1.4936330
apa: Jostmeier, T., Wecker, T., Reuter, D., As, D. J., & Betz, M. (2015). Ultrafast
carrier dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice.
Applied Physics Letters, 107(21). https://doi.org/10.1063/1.4936330
bibtex: '@article{Jostmeier_Wecker_Reuter_As_Betz_2015, title={Ultrafast carrier
dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice},
volume={107}, DOI={10.1063/1.4936330},
number={21211101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Jostmeier, Thorben and Wecker, Tobias and Reuter, Dirk and As, Donat Josef
and Betz, Markus}, year={2015} }'
chicago: Jostmeier, Thorben, Tobias Wecker, Dirk Reuter, Donat Josef As, and Markus
Betz. “Ultrafast Carrier Dynamics and Resonant Inter-Miniband Nonlinearity of
a Cubic GaN/AlN Superlattice.” Applied Physics Letters 107, no. 21 (2015).
https://doi.org/10.1063/1.4936330.
ieee: T. Jostmeier, T. Wecker, D. Reuter, D. J. As, and M. Betz, “Ultrafast carrier
dynamics and resonant inter-miniband nonlinearity of a cubic GaN/AlN superlattice,”
Applied Physics Letters, vol. 107, no. 21, 2015.
mla: Jostmeier, Thorben, et al. “Ultrafast Carrier Dynamics and Resonant Inter-Miniband
Nonlinearity of a Cubic GaN/AlN Superlattice.” Applied Physics Letters,
vol. 107, no. 21, 211101, AIP Publishing, 2015, doi:10.1063/1.4936330.
short: T. Jostmeier, T. Wecker, D. Reuter, D.J. As, M. Betz, Applied Physics Letters
107 (2015).
date_created: 2019-01-29T11:17:04Z
date_updated: 2022-01-06T07:03:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4936330
intvolume: ' 107'
issue: '21'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Ultrafast carrier dynamics and resonant inter-miniband nonlinearity of a cubic
GaN/AlN superlattice
type: journal_article
user_id: '42514'
volume: 107
year: '2015'
...
---
_id: '7221'
article_number: '183504'
author:
- first_name: J. C. H.
full_name: Chen, J. C. H.
last_name: Chen
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: A. P.
full_name: Micolich, A. P.
last_name: Micolich
- first_name: K.
full_name: Das Gupta, K.
last_name: Das Gupta
- first_name: F.
full_name: Sfigakis, F.
last_name: Sfigakis
- first_name: D. A.
full_name: Ritchie, D. A.
last_name: Ritchie
- first_name: K.
full_name: Trunov, K.
last_name: Trunov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
citation:
ama: Chen JCH, Klochan O, Micolich AP, et al. Fabrication and characterisation of
gallium arsenide ambipolar quantum point contacts. Applied Physics Letters.
2015;106(18). doi:10.1063/1.4918934
apa: Chen, J. C. H., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F.,
Ritchie, D. A., … Hamilton, A. R. (2015). Fabrication and characterisation of
gallium arsenide ambipolar quantum point contacts. Applied Physics Letters,
106(18). https://doi.org/10.1063/1.4918934
bibtex: '@article{Chen_Klochan_Micolich_Das Gupta_Sfigakis_Ritchie_Trunov_Reuter_Wieck_Hamilton_2015,
title={Fabrication and characterisation of gallium arsenide ambipolar quantum
point contacts}, volume={106}, DOI={10.1063/1.4918934},
number={18183504}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chen, J. C. H. and Klochan, O. and Micolich, A. P. and Das Gupta, K. and
Sfigakis, F. and Ritchie, D. A. and Trunov, K. and Reuter, Dirk and Wieck, A.
D. and Hamilton, A. R.}, year={2015} }'
chicago: Chen, J. C. H., O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis,
D. A. Ritchie, K. Trunov, Dirk Reuter, A. D. Wieck, and A. R. Hamilton. “Fabrication
and Characterisation of Gallium Arsenide Ambipolar Quantum Point Contacts.” Applied
Physics Letters 106, no. 18 (2015). https://doi.org/10.1063/1.4918934.
ieee: J. C. H. Chen et al., “Fabrication and characterisation of gallium
arsenide ambipolar quantum point contacts,” Applied Physics Letters, vol.
106, no. 18, 2015.
mla: Chen, J. C. H., et al. “Fabrication and Characterisation of Gallium Arsenide
Ambipolar Quantum Point Contacts.” Applied Physics Letters, vol. 106, no.
18, 183504, AIP Publishing, 2015, doi:10.1063/1.4918934.
short: J.C.H. Chen, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis, D.A. Ritchie,
K. Trunov, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters 106 (2015).
date_created: 2019-01-29T11:55:29Z
date_updated: 2022-01-06T07:03:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4918934
intvolume: ' 106'
issue: '18'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication and characterisation of gallium arsenide ambipolar quantum point
contacts
type: journal_article
user_id: '42514'
volume: 106
year: '2015'
...
---
_id: '4331'
abstract:
- lang: eng
text: "We report about the fabrication and analysis of high Q photonic crystal cavities
with metallic\r\nSchottky-contacts. The structures are based on GaAs n-i membranes
with an InGaAs quantum well\r\nin the i-region and nanostructured low ohmic metal
top-gates. They are designed for photocurrent\r\nreadout within the cavity and
fast electric manipulations. The cavity structures are characterized by\r\nphotoluminescence
and photocurrent spectroscopy under resonant excitation. We find strong cavity\r\nresonances
in the photocurrent spectra and surprisingly high Q-factors up to 6500. Temperature
dependent\r\nphotocurrent measurements in the region between 4.5K and 310K show
an exponential\r\nenhancement of the photocurrent signal and an external quantum
efficiency up to 0.26."
article_number: '041113'
article_type: original
author:
- first_name: W.
full_name: Quiring, W.
last_name: Quiring
- first_name: M.
full_name: Al-Hmoud, M.
last_name: Al-Hmoud
- first_name: A.
full_name: Rai, A.
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
citation:
ama: Quiring W, Al-Hmoud M, Rai A, Reuter D, Wieck AD, Zrenner A. Photonic crystal
cavities with metallic Schottky contacts. Applied Physics Letters. 2015;107(4).
doi:10.1063/1.4928038
apa: Quiring, W., Al-Hmoud, M., Rai, A., Reuter, D., Wieck, A. D., & Zrenner,
A. (2015). Photonic crystal cavities with metallic Schottky contacts. Applied
Physics Letters, 107(4). https://doi.org/10.1063/1.4928038
bibtex: '@article{Quiring_Al-Hmoud_Rai_Reuter_Wieck_Zrenner_2015, title={Photonic
crystal cavities with metallic Schottky contacts}, volume={107}, DOI={10.1063/1.4928038},
number={4041113}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Quiring, W. and Al-Hmoud, M. and Rai, A. and Reuter, Dirk and Wieck, A.
D. and Zrenner, Artur}, year={2015} }'
chicago: Quiring, W., M. Al-Hmoud, A. Rai, Dirk Reuter, A. D. Wieck, and Artur Zrenner.
“Photonic Crystal Cavities with Metallic Schottky Contacts.” Applied Physics
Letters 107, no. 4 (2015). https://doi.org/10.1063/1.4928038.
ieee: W. Quiring, M. Al-Hmoud, A. Rai, D. Reuter, A. D. Wieck, and A. Zrenner, “Photonic
crystal cavities with metallic Schottky contacts,” Applied Physics Letters,
vol. 107, no. 4, 2015.
mla: Quiring, W., et al. “Photonic Crystal Cavities with Metallic Schottky Contacts.”
Applied Physics Letters, vol. 107, no. 4, 041113, AIP Publishing, 2015,
doi:10.1063/1.4928038.
short: W. Quiring, M. Al-Hmoud, A. Rai, D. Reuter, A.D. Wieck, A. Zrenner, Applied
Physics Letters 107 (2015).
date_created: 2018-08-30T13:13:46Z
date_updated: 2022-01-06T07:00:56Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4928038
intvolume: ' 107'
issue: '4'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '56'
name: TRR 142 - Project Area C
- _id: '74'
name: TRR 142 - Subproject C4
- _id: '57'
name: TRR 142 - Project Area Z
- _id: '77'
name: TRR 142 - Subproject Z1
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photonic crystal cavities with metallic Schottky contacts
type: journal_article
user_id: '49428'
volume: 107
year: '2015'
...
---
_id: '6524'
abstract:
- lang: eng
text: We use a picosecond acoustics technique to modulate the laser output of electrically
pumped GaAs/AlAs micropillar lasers with InGaAs quantum dots. The modulation of
the emission wavelength takes place on the frequencies of the nanomechanical extensional
and breathing (radial) modes of the micropillars. The amplitude of the modulation
for various nanomechanical modes is different for every micropillar which is explained
by a various elastic contact between the micropillar walls and polymer environment.
article_number: '041103'
article_type: original
author:
- first_name: T.
full_name: Czerniuk, T.
last_name: Czerniuk
- first_name: J.
full_name: Tepper, J.
last_name: Tepper
- first_name: A. V.
full_name: Akimov, A. V.
last_name: Akimov
- first_name: S.
full_name: Unsleber, S.
last_name: Unsleber
- first_name: C.
full_name: Schneider, C.
last_name: Schneider
- first_name: M.
full_name: Kamp, M.
last_name: Kamp
- first_name: S.
full_name: Höfling, S.
last_name: Höfling
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Czerniuk T, Tepper J, Akimov AV, et al. Impact of nanomechanical resonances
on lasing from electrically pumped quantum dot micropillars. Applied Physics
Letters. 2015;106(4). doi:10.1063/1.4906611
apa: Czerniuk, T., Tepper, J., Akimov, A. V., Unsleber, S., Schneider, C., Kamp,
M., … Bayer, M. (2015). Impact of nanomechanical resonances on lasing from electrically
pumped quantum dot micropillars. Applied Physics Letters, 106(4).
https://doi.org/10.1063/1.4906611
bibtex: '@article{Czerniuk_Tepper_Akimov_Unsleber_Schneider_Kamp_Höfling_Yakovlev_Bayer_2015,
title={Impact of nanomechanical resonances on lasing from electrically pumped
quantum dot micropillars}, volume={106}, DOI={10.1063/1.4906611},
number={4041103}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Czerniuk, T. and Tepper, J. and Akimov, A. V. and Unsleber, S. and Schneider,
C. and Kamp, M. and Höfling, S. and Yakovlev, D. R. and Bayer, M.}, year={2015}
}'
chicago: Czerniuk, T., J. Tepper, A. V. Akimov, S. Unsleber, C. Schneider, M. Kamp,
S. Höfling, D. R. Yakovlev, and M. Bayer. “Impact of Nanomechanical Resonances
on Lasing from Electrically Pumped Quantum Dot Micropillars.” Applied Physics
Letters 106, no. 4 (2015). https://doi.org/10.1063/1.4906611.
ieee: T. Czerniuk et al., “Impact of nanomechanical resonances on lasing
from electrically pumped quantum dot micropillars,” Applied Physics Letters,
vol. 106, no. 4, 2015.
mla: Czerniuk, T., et al. “Impact of Nanomechanical Resonances on Lasing from Electrically
Pumped Quantum Dot Micropillars.” Applied Physics Letters, vol. 106, no.
4, 041103, AIP Publishing, 2015, doi:10.1063/1.4906611.
short: T. Czerniuk, J. Tepper, A.V. Akimov, S. Unsleber, C. Schneider, M. Kamp,
S. Höfling, D.R. Yakovlev, M. Bayer, Applied Physics Letters 106 (2015).
date_created: 2019-01-09T09:07:33Z
date_updated: 2022-01-06T07:03:10Z
department:
- _id: '230'
doi: 10.1063/1.4906611
intvolume: ' 106'
issue: '4'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '54'
name: TRR 142 - Project Area A
- _id: '63'
name: TRR 142 - Subproject A6
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Impact of nanomechanical resonances on lasing from electrically pumped quantum
dot micropillars
type: journal_article
user_id: '49428'
volume: 106
year: '2015'
...
---
_id: '39689'
article_number: '201114'
author:
- first_name: Markus
full_name: Wahle, Markus
last_name: Wahle
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Wahle M, Kitzerow H-S. Electrically tunable zero dispersion wavelengths in
photonic crystal fibers filled with a dual frequency addressable liquid crystal.
Applied Physics Letters. 2015;107(20). doi:10.1063/1.4936086
apa: Wahle, M., & Kitzerow, H.-S. (2015). Electrically tunable zero dispersion
wavelengths in photonic crystal fibers filled with a dual frequency addressable
liquid crystal. Applied Physics Letters, 107(20), Article 201114.
https://doi.org/10.1063/1.4936086
bibtex: '@article{Wahle_Kitzerow_2015, title={Electrically tunable zero dispersion
wavelengths in photonic crystal fibers filled with a dual frequency addressable
liquid crystal}, volume={107}, DOI={10.1063/1.4936086},
number={20201114}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Wahle, Markus and Kitzerow, Heinz-Siegfried}, year={2015} }'
chicago: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero
Dispersion Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency
Addressable Liquid Crystal.” Applied Physics Letters 107, no. 20 (2015).
https://doi.org/10.1063/1.4936086.
ieee: 'M. Wahle and H.-S. Kitzerow, “Electrically tunable zero dispersion wavelengths
in photonic crystal fibers filled with a dual frequency addressable liquid crystal,”
Applied Physics Letters, vol. 107, no. 20, Art. no. 201114, 2015, doi:
10.1063/1.4936086.'
mla: Wahle, Markus, and Heinz-Siegfried Kitzerow. “Electrically Tunable Zero Dispersion
Wavelengths in Photonic Crystal Fibers Filled with a Dual Frequency Addressable
Liquid Crystal.” Applied Physics Letters, vol. 107, no. 20, 201114, AIP
Publishing, 2015, doi:10.1063/1.4936086.
short: M. Wahle, H.-S. Kitzerow, Applied Physics Letters 107 (2015).
date_created: 2023-01-24T18:11:41Z
date_updated: 2023-01-24T18:12:09Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4936086
intvolume: ' 107'
issue: '20'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electrically tunable zero dispersion wavelengths in photonic crystal fibers
filled with a dual frequency addressable liquid crystal
type: journal_article
user_id: '254'
volume: 107
year: '2015'
...
---
_id: '7224'
article_number: '241101'
author:
- first_name: J.
full_name: Repp, J.
last_name: Repp
- first_name: G. J.
full_name: Schinner, G. J.
last_name: Schinner
- first_name: E.
full_name: Schubert, E.
last_name: Schubert
- first_name: A. K.
full_name: Rai, A. K.
last_name: Rai
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: U.
full_name: Wurstbauer, U.
last_name: Wurstbauer
- first_name: J. P.
full_name: Kotthaus, J. P.
last_name: Kotthaus
- first_name: A. W.
full_name: Holleitner, A. W.
last_name: Holleitner
citation:
ama: Repp J, Schinner GJ, Schubert E, et al. Confocal shift interferometry of coherent
emission from trapped dipolar excitons. Applied Physics Letters. 2014;105(24).
doi:10.1063/1.4904222
apa: Repp, J., Schinner, G. J., Schubert, E., Rai, A. K., Reuter, D., Wieck, A.
D., … Holleitner, A. W. (2014). Confocal shift interferometry of coherent emission
from trapped dipolar excitons. Applied Physics Letters, 105(24).
https://doi.org/10.1063/1.4904222
bibtex: '@article{Repp_Schinner_Schubert_Rai_Reuter_Wieck_Wurstbauer_Kotthaus_Holleitner_2014,
title={Confocal shift interferometry of coherent emission from trapped dipolar
excitons}, volume={105}, DOI={10.1063/1.4904222},
number={24241101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Repp, J. and Schinner, G. J. and Schubert, E. and Rai, A. K. and Reuter,
Dirk and Wieck, A. D. and Wurstbauer, U. and Kotthaus, J. P. and Holleitner, A.
W.}, year={2014} }'
chicago: Repp, J., G. J. Schinner, E. Schubert, A. K. Rai, Dirk Reuter, A. D. Wieck,
U. Wurstbauer, J. P. Kotthaus, and A. W. Holleitner. “Confocal Shift Interferometry
of Coherent Emission from Trapped Dipolar Excitons.” Applied Physics Letters
105, no. 24 (2014). https://doi.org/10.1063/1.4904222.
ieee: J. Repp et al., “Confocal shift interferometry of coherent emission
from trapped dipolar excitons,” Applied Physics Letters, vol. 105, no.
24, 2014.
mla: Repp, J., et al. “Confocal Shift Interferometry of Coherent Emission from Trapped
Dipolar Excitons.” Applied Physics Letters, vol. 105, no. 24, 241101, AIP
Publishing, 2014, doi:10.1063/1.4904222.
short: J. Repp, G.J. Schinner, E. Schubert, A.K. Rai, D. Reuter, A.D. Wieck, U.
Wurstbauer, J.P. Kotthaus, A.W. Holleitner, Applied Physics Letters 105 (2014).
date_created: 2019-01-29T12:19:14Z
date_updated: 2022-01-06T07:03:29Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4904222
intvolume: ' 105'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Confocal shift interferometry of coherent emission from trapped dipolar excitons
type: journal_article
user_id: '42514'
volume: 105
year: '2014'
...
---
_id: '7259'
article_number: '092401'
author:
- first_name: J. H.
full_name: Buß, J. H.
last_name: Buß
- first_name: J.
full_name: Rudolph, J.
last_name: Rudolph
- first_name: S.
full_name: Shvarkov, S.
last_name: Shvarkov
- first_name: F.
full_name: Semond, F.
last_name: Semond
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: D.
full_name: Hägele, D.
last_name: Hägele
citation:
ama: 'Buß JH, Rudolph J, Shvarkov S, et al. Magneto-optical studies of Gd-implanted
GaN: No spin alignment of conduction band electrons. Applied Physics Letters.
2013;103(9). doi:10.1063/1.4819767'
apa: 'Buß, J. H., Rudolph, J., Shvarkov, S., Semond, F., Reuter, D., Wieck, A. D.,
& Hägele, D. (2013). Magneto-optical studies of Gd-implanted GaN: No spin
alignment of conduction band electrons. Applied Physics Letters, 103(9).
https://doi.org/10.1063/1.4819767'
bibtex: '@article{Buß_Rudolph_Shvarkov_Semond_Reuter_Wieck_Hägele_2013, title={Magneto-optical
studies of Gd-implanted GaN: No spin alignment of conduction band electrons},
volume={103}, DOI={10.1063/1.4819767},
number={9092401}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Buß, J. H. and Rudolph, J. and Shvarkov, S. and Semond, F. and Reuter,
Dirk and Wieck, A. D. and Hägele, D.}, year={2013} }'
chicago: 'Buß, J. H., J. Rudolph, S. Shvarkov, F. Semond, Dirk Reuter, A. D. Wieck,
and D. Hägele. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment
of Conduction Band Electrons.” Applied Physics Letters 103, no. 9 (2013).
https://doi.org/10.1063/1.4819767.'
ieee: 'J. H. Buß et al., “Magneto-optical studies of Gd-implanted GaN: No
spin alignment of conduction band electrons,” Applied Physics Letters,
vol. 103, no. 9, 2013.'
mla: 'Buß, J. H., et al. “Magneto-Optical Studies of Gd-Implanted GaN: No Spin Alignment
of Conduction Band Electrons.” Applied Physics Letters, vol. 103, no. 9,
092401, AIP Publishing, 2013, doi:10.1063/1.4819767.'
short: J.H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A.D. Wieck, D. Hägele,
Applied Physics Letters 103 (2013).
date_created: 2019-01-30T12:56:20Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4819767
intvolume: ' 103'
issue: '9'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: 'Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction
band electrons'
type: journal_article
user_id: '42514'
volume: 103
year: '2013'
...
---
_id: '3963'
abstract:
- lang: eng
text: "Whispering gallery modes (WGMs) were observed in 60 nm thin cubic AlN microdisk
resonators containing a single layer of non-polar cubic GaN quantum dots. Freestanding
microdisks were patterned by means of electron beam lithography and a two step
reactive ion etching process. Micro-photoluminescence spectroscopy investigations
were performed for optical characterization. We analyzed the mode spacing for
disk diameters ranging from 2-4 lm. Numerical investigations using three dimensional
finite difference time domain calculations were in good agreement\r\nwith the
experimental data. Whispering gallery modes of the radial orders 1 and 2 were
identified by means of simulated mode field distributions."
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Bürger M, Ruth M, Declair S, Förstner J, Meier C, As DJ. Whispering gallery
modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots. Applied
Physics Letters. 2013;102(8):081105. doi:10.1063/1.4793653
apa: Bürger, M., Ruth, M., Declair, S., Förstner, J., Meier, C., & As, D. J.
(2013). Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots. Applied Physics Letters, 102(8), 081105. https://doi.org/10.1063/1.4793653
bibtex: '@article{Bürger_Ruth_Declair_Förstner_Meier_As_2013, title={Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots},
volume={102}, DOI={10.1063/1.4793653},
number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bürger,
M. and Ruth, M. and Declair, S. and Förstner, Jens and Meier, Cedrik and As, Donat
Josef}, year={2013}, pages={081105} }'
chicago: 'Bürger, M., M. Ruth, S. Declair, Jens Förstner, Cedrik Meier, and Donat
Josef As. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks Containing Non-Polar
GaN Quantum Dots.” Applied Physics Letters 102, no. 8 (2013): 081105. https://doi.org/10.1063/1.4793653.'
ieee: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, and D. J. As, “Whispering
gallery modes in zinc-blende AlN microdisks containing non-polar GaN quantum dots,”
Applied Physics Letters, vol. 102, no. 8, p. 081105, 2013.
mla: Bürger, M., et al. “Whispering Gallery Modes in Zinc-Blende AlN Microdisks
Containing Non-Polar GaN Quantum Dots.” Applied Physics Letters, vol. 102,
no. 8, AIP Publishing, 2013, p. 081105, doi:10.1063/1.4793653.
short: M. Bürger, M. Ruth, S. Declair, J. Förstner, C. Meier, D.J. As, Applied Physics
Letters 102 (2013) 081105.
date_created: 2018-08-21T07:43:22Z
date_updated: 2022-01-06T07:00:01Z
ddc:
- '530'
department:
- _id: '15'
- _id: '287'
- _id: '284'
- _id: '230'
- _id: '35'
doi: 10.1063/1.4793653
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T07:47:02Z
date_updated: 2018-09-04T20:08:52Z
file_id: '3964'
file_name: 2013-02 Bürger,Ruth,Declair,Förstner,Meier,As_Whispering gallery modes
in zinc-blende AlN microdisks containing non-polar GaN quantum dots.pdf
file_size: 935911
relation: main_file
file_date_updated: 2018-09-04T20:08:52Z
has_accepted_license: '1'
intvolume: ' 102'
issue: '8'
keyword:
- tet_topic_qd
- tet_topic_microdisk
language:
- iso: eng
oa: '1'
page: '081105'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Whispering gallery modes in zinc-blende AlN microdisks containing non-polar
GaN quantum dots
type: journal_article
urn: '39635'
user_id: '14'
volume: 102
year: '2013'
...
---
_id: '39719'
article_number: '043303'
author:
- first_name: Joachim
full_name: Vollbrecht, Joachim
last_name: Vollbrecht
- first_name: Olga
full_name: Kasdorf, Olga
last_name: Kasdorf
- first_name: Viktor
full_name: Quiring, Viktor
last_name: Quiring
- first_name: Hubertus
full_name: Suche, Hubertus
last_name: Suche
- first_name: Harald
full_name: Bock, Harald
last_name: Bock
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Vollbrecht J, Kasdorf O, Quiring V, Suche H, Bock H, Kitzerow H-S. Microresonator-enhanced
electroluminescence of an organic light emitting diode based on a columnar liquid
crystal. Applied Physics Letters. 2013;103(4). doi:10.1063/1.4816425
apa: Vollbrecht, J., Kasdorf, O., Quiring, V., Suche, H., Bock, H., & Kitzerow,
H.-S. (2013). Microresonator-enhanced electroluminescence of an organic light
emitting diode based on a columnar liquid crystal. Applied Physics Letters,
103(4), Article 043303. https://doi.org/10.1063/1.4816425
bibtex: '@article{Vollbrecht_Kasdorf_Quiring_Suche_Bock_Kitzerow_2013, title={Microresonator-enhanced
electroluminescence of an organic light emitting diode based on a columnar liquid
crystal}, volume={103}, DOI={10.1063/1.4816425},
number={4043303}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Vollbrecht, Joachim and Kasdorf, Olga and Quiring, Viktor and Suche, Hubertus
and Bock, Harald and Kitzerow, Heinz-Siegfried}, year={2013} }'
chicago: Vollbrecht, Joachim, Olga Kasdorf, Viktor Quiring, Hubertus Suche, Harald
Bock, and Heinz-Siegfried Kitzerow. “Microresonator-Enhanced Electroluminescence
of an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied
Physics Letters 103, no. 4 (2013). https://doi.org/10.1063/1.4816425.
ieee: 'J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, and H.-S. Kitzerow,
“Microresonator-enhanced electroluminescence of an organic light emitting diode
based on a columnar liquid crystal,” Applied Physics Letters, vol. 103,
no. 4, Art. no. 043303, 2013, doi: 10.1063/1.4816425.'
mla: Vollbrecht, Joachim, et al. “Microresonator-Enhanced Electroluminescence of
an Organic Light Emitting Diode Based on a Columnar Liquid Crystal.” Applied
Physics Letters, vol. 103, no. 4, 043303, AIP Publishing, 2013, doi:10.1063/1.4816425.
short: J. Vollbrecht, O. Kasdorf, V. Quiring, H. Suche, H. Bock, H.-S. Kitzerow,
Applied Physics Letters 103 (2013).
date_created: 2023-01-24T18:33:09Z
date_updated: 2023-01-24T18:33:39Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4816425
intvolume: ' 103'
issue: '4'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Microresonator-enhanced electroluminescence of an organic light emitting diode
based on a columnar liquid crystal
type: journal_article
user_id: '254'
volume: 103
year: '2013'
...
---
_id: '26066'
article_number: '211119'
author:
- first_name: Ming-Fei
full_name: Li, Ming-Fei
last_name: Li
- first_name: Yu-Ran
full_name: Zhang, Yu-Ran
last_name: Zhang
- first_name: Xue-Feng
full_name: Liu, Xue-Feng
last_name: Liu
- first_name: Xu-Ri
full_name: Yao, Xu-Ri
last_name: Yao
- first_name: Kai Hong
full_name: Luo, Kai Hong
id: '36389'
last_name: Luo
orcid: 0000-0003-1008-4976
- first_name: Heng
full_name: Fan, Heng
last_name: Fan
- first_name: Ling-An
full_name: Wu, Ling-An
last_name: Wu
citation:
ama: Li M-F, Zhang Y-R, Liu X-F, et al. A double-threshold technique for fast time-correspondence
imaging. Applied Physics Letters. Published online 2013. doi:10.1063/1.4832328
apa: Li, M.-F., Zhang, Y.-R., Liu, X.-F., Yao, X.-R., Luo, K. H., Fan, H., &
Wu, L.-A. (2013). A double-threshold technique for fast time-correspondence imaging.
Applied Physics Letters, Article 211119. https://doi.org/10.1063/1.4832328
bibtex: '@article{Li_Zhang_Liu_Yao_Luo_Fan_Wu_2013, title={A double-threshold technique
for fast time-correspondence imaging}, DOI={10.1063/1.4832328},
number={211119}, journal={Applied Physics Letters}, author={Li, Ming-Fei and Zhang,
Yu-Ran and Liu, Xue-Feng and Yao, Xu-Ri and Luo, Kai Hong and Fan, Heng and Wu,
Ling-An}, year={2013} }'
chicago: Li, Ming-Fei, Yu-Ran Zhang, Xue-Feng Liu, Xu-Ri Yao, Kai Hong Luo, Heng
Fan, and Ling-An Wu. “A Double-Threshold Technique for Fast Time-Correspondence
Imaging.” Applied Physics Letters, 2013. https://doi.org/10.1063/1.4832328.
ieee: 'M.-F. Li et al., “A double-threshold technique for fast time-correspondence
imaging,” Applied Physics Letters, Art. no. 211119, 2013, doi: 10.1063/1.4832328.'
mla: Li, Ming-Fei, et al. “A Double-Threshold Technique for Fast Time-Correspondence
Imaging.” Applied Physics Letters, 211119, 2013, doi:10.1063/1.4832328.
short: M.-F. Li, Y.-R. Zhang, X.-F. Liu, X.-R. Yao, K.H. Luo, H. Fan, L.-A. Wu,
Applied Physics Letters (2013).
date_created: 2021-10-12T08:38:51Z
date_updated: 2023-01-26T10:09:42Z
doi: 10.1063/1.4832328
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: A double-threshold technique for fast time-correspondence imaging
type: journal_article
user_id: '36389'
year: '2013'
...
---
_id: '7301'
article_number: '112402'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Magnetic field dependence of the spin
relaxation length in spin light-emitting diodes. Applied Physics Letters.
2012;101(11). doi:10.1063/1.4752162
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2012). Magnetic field dependence of the spin relaxation length
in spin light-emitting diodes. Applied Physics Letters, 101(11).
https://doi.org/10.1063/1.4752162
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2012, title={Magnetic field dependence of the spin relaxation length in spin
light-emitting diodes}, volume={101}, DOI={10.1063/1.4752162},
number={11112402}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid
and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck,
Andreas D. and Gerhardt, Nils C. and et al.}, year={2012} }'
chicago: Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Magnetic Field Dependence of the Spin Relaxation
Length in Spin Light-Emitting Diodes.” Applied Physics Letters 101, no.
11 (2012). https://doi.org/10.1063/1.4752162.
ieee: H. Höpfner et al., “Magnetic field dependence of the spin relaxation
length in spin light-emitting diodes,” Applied Physics Letters, vol. 101,
no. 11, 2012.
mla: Höpfner, Henning, et al. “Magnetic Field Dependence of the Spin Relaxation
Length in Spin Light-Emitting Diodes.” Applied Physics Letters, vol. 101,
no. 11, 112402, AIP Publishing, 2012, doi:10.1063/1.4752162.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Applied Physics Letters
101 (2012).
date_created: 2019-01-31T09:05:22Z
date_updated: 2022-01-06T07:03:33Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4752162
intvolume: ' 101'
issue: '11'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Magnetic field dependence of the spin relaxation length in spin light-emitting
diodes
type: journal_article
user_id: '42514'
volume: 101
year: '2012'
...
---
_id: '7312'
article_number: '232110'
author:
- first_name: Andreas
full_name: Beckel, Andreas
last_name: Beckel
- first_name: Daming
full_name: Zhou, Daming
last_name: Zhou
- first_name: Bastian
full_name: Marquardt, Bastian
last_name: Marquardt
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Martin
full_name: Geller, Martin
last_name: Geller
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
citation:
ama: Beckel A, Zhou D, Marquardt B, et al. Momentum matching in the tunneling between
2-dimensional and 0-dimensional electron systems. Applied Physics Letters.
2012;100(23). doi:10.1063/1.4728114
apa: Beckel, A., Zhou, D., Marquardt, B., Reuter, D., Wieck, A. D., Geller, M.,
& Lorke, A. (2012). Momentum matching in the tunneling between 2-dimensional
and 0-dimensional electron systems. Applied Physics Letters, 100(23).
https://doi.org/10.1063/1.4728114
bibtex: '@article{Beckel_Zhou_Marquardt_Reuter_Wieck_Geller_Lorke_2012, title={Momentum
matching in the tunneling between 2-dimensional and 0-dimensional electron systems},
volume={100}, DOI={10.1063/1.4728114},
number={23232110}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Beckel, Andreas and Zhou, Daming and Marquardt, Bastian and Reuter, Dirk
and Wieck, Andreas D. and Geller, Martin and Lorke, Axel}, year={2012} }'
chicago: Beckel, Andreas, Daming Zhou, Bastian Marquardt, Dirk Reuter, Andreas D.
Wieck, Martin Geller, and Axel Lorke. “Momentum Matching in the Tunneling between
2-Dimensional and 0-Dimensional Electron Systems.” Applied Physics Letters
100, no. 23 (2012). https://doi.org/10.1063/1.4728114.
ieee: A. Beckel et al., “Momentum matching in the tunneling between 2-dimensional
and 0-dimensional electron systems,” Applied Physics Letters, vol. 100,
no. 23, 2012.
mla: Beckel, Andreas, et al. “Momentum Matching in the Tunneling between 2-Dimensional
and 0-Dimensional Electron Systems.” Applied Physics Letters, vol. 100,
no. 23, 232110, AIP Publishing, 2012, doi:10.1063/1.4728114.
short: A. Beckel, D. Zhou, B. Marquardt, D. Reuter, A.D. Wieck, M. Geller, A. Lorke,
Applied Physics Letters 100 (2012).
date_created: 2019-01-31T10:22:42Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4728114
intvolume: ' 100'
issue: '23'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Momentum matching in the tunneling between 2-dimensional and 0-dimensional
electron systems
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7313'
article_number: '232107'
author:
- first_name: A.
full_name: Schwan, A.
last_name: Schwan
- first_name: S.
full_name: Varwig, S.
last_name: Varwig
- first_name: A.
full_name: Greilich, A.
last_name: Greilich
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Schwan A, Varwig S, Greilich A, et al. Non-resonant optical excitation of mode-locked
electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics
Letters. 2012;100(23). doi:10.1063/1.4726264
apa: Schwan, A., Varwig, S., Greilich, A., Yakovlev, D. R., Reuter, D., Wieck, A.
D., & Bayer, M. (2012). Non-resonant optical excitation of mode-locked electron
spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters,
100(23). https://doi.org/10.1063/1.4726264
bibtex: '@article{Schwan_Varwig_Greilich_Yakovlev_Reuter_Wieck_Bayer_2012, title={Non-resonant
optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum
dot ensemble}, volume={100}, DOI={10.1063/1.4726264},
number={23232107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Schwan, A. and Varwig, S. and Greilich, A. and Yakovlev, D. R. and Reuter,
Dirk and Wieck, A. D. and Bayer, M.}, year={2012} }'
chicago: Schwan, A., S. Varwig, A. Greilich, D. R. Yakovlev, Dirk Reuter, A. D.
Wieck, and M. Bayer. “Non-Resonant Optical Excitation of Mode-Locked Electron
Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters
100, no. 23 (2012). https://doi.org/10.1063/1.4726264.
ieee: A. Schwan et al., “Non-resonant optical excitation of mode-locked electron
spin coherence in (In,Ga)As/GaAs quantum dot ensemble,” Applied Physics Letters,
vol. 100, no. 23, 2012.
mla: Schwan, A., et al. “Non-Resonant Optical Excitation of Mode-Locked Electron
Spin Coherence in (In,Ga)As/GaAs Quantum Dot Ensemble.” Applied Physics Letters,
vol. 100, no. 23, 232107, AIP Publishing, 2012, doi:10.1063/1.4726264.
short: A. Schwan, S. Varwig, A. Greilich, D.R. Yakovlev, D. Reuter, A.D. Wieck,
M. Bayer, Applied Physics Letters 100 (2012).
date_created: 2019-01-31T10:23:29Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.4726264
intvolume: ' 100'
issue: '23'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs
quantum dot ensemble
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7327'
article_number: '132103'
author:
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Huang J, Chen YS, Ludwig A, Reuter D, Wieck AD, Bacher G. Electron-nuclei spin
coupling in GaAs—Free versus localized electrons. Applied Physics Letters.
2012;100(13). doi:10.1063/1.3699261
apa: Huang, J., Chen, Y. S., Ludwig, A., Reuter, D., Wieck, A. D., & Bacher,
G. (2012). Electron-nuclei spin coupling in GaAs—Free versus localized electrons.
Applied Physics Letters, 100(13). https://doi.org/10.1063/1.3699261
bibtex: '@article{Huang_Chen_Ludwig_Reuter_Wieck_Bacher_2012, title={Electron-nuclei
spin coupling in GaAs—Free versus localized electrons}, volume={100}, DOI={10.1063/1.3699261}, number={13132103},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang,
J. and Chen, Y. S. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Bacher,
G.}, year={2012} }'
chicago: Huang, J., Y. S. Chen, A. Ludwig, Dirk Reuter, A. D. Wieck, and G. Bacher.
“Electron-Nuclei Spin Coupling in GaAs—Free versus Localized Electrons.” Applied
Physics Letters 100, no. 13 (2012). https://doi.org/10.1063/1.3699261.
ieee: J. Huang, Y. S. Chen, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Electron-nuclei
spin coupling in GaAs—Free versus localized electrons,” Applied Physics Letters,
vol. 100, no. 13, 2012.
mla: Huang, J., et al. “Electron-Nuclei Spin Coupling in GaAs—Free versus Localized
Electrons.” Applied Physics Letters, vol. 100, no. 13, 132103, AIP Publishing,
2012, doi:10.1063/1.3699261.
short: J. Huang, Y.S. Chen, A. Ludwig, D. Reuter, A.D. Wieck, G. Bacher, Applied
Physics Letters 100 (2012).
date_created: 2019-01-31T11:11:08Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3699261
intvolume: ' 100'
issue: '13'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electron-nuclei spin coupling in GaAs—Free versus localized electrons
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7330'
article_number: '052101'
author:
- first_name: J. C. H.
full_name: Chen, J. C. H.
last_name: Chen
- first_name: D. Q.
full_name: Wang, D. Q.
last_name: Wang
- first_name: O.
full_name: Klochan, O.
last_name: Klochan
- first_name: A. P.
full_name: Micolich, A. P.
last_name: Micolich
- first_name: K.
full_name: Das Gupta, K.
last_name: Das Gupta
- first_name: F.
full_name: Sfigakis, F.
last_name: Sfigakis
- first_name: D. A.
full_name: Ritchie, D. A.
last_name: Ritchie
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A. R.
full_name: Hamilton, A. R.
last_name: Hamilton
citation:
ama: Chen JCH, Wang DQ, Klochan O, et al. Fabrication and characterization of ambipolar
devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters.
2012;100(5). doi:10.1063/1.3673837
apa: Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis,
F., … Hamilton, A. R. (2012). Fabrication and characterization of ambipolar devices
on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100(5).
https://doi.org/10.1063/1.3673837
bibtex: '@article{Chen_Wang_Klochan_Micolich_Das Gupta_Sfigakis_Ritchie_Reuter_Wieck_Hamilton_2012,
title={Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs
heterostructure}, volume={100}, DOI={10.1063/1.3673837},
number={5052101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chen, J. C. H. and Wang, D. Q. and Klochan, O. and Micolich, A. P. and
Das Gupta, K. and Sfigakis, F. and Ritchie, D. A. and Reuter, Dirk and Wieck,
A. D. and Hamilton, A. R.}, year={2012} }'
chicago: Chen, J. C. H., D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F.
Sfigakis, D. A. Ritchie, Dirk Reuter, A. D. Wieck, and A. R. Hamilton. “Fabrication
and Characterization of Ambipolar Devices on an Undoped AlGaAs/GaAs Heterostructure.”
Applied Physics Letters 100, no. 5 (2012). https://doi.org/10.1063/1.3673837.
ieee: J. C. H. Chen et al., “Fabrication and characterization of ambipolar
devices on an undoped AlGaAs/GaAs heterostructure,” Applied Physics Letters,
vol. 100, no. 5, 2012.
mla: Chen, J. C. H., et al. “Fabrication and Characterization of Ambipolar Devices
on an Undoped AlGaAs/GaAs Heterostructure.” Applied Physics Letters, vol.
100, no. 5, 052101, AIP Publishing, 2012, doi:10.1063/1.3673837.
short: J.C.H. Chen, D.Q. Wang, O. Klochan, A.P. Micolich, K. Das Gupta, F. Sfigakis,
D.A. Ritchie, D. Reuter, A.D. Wieck, A.R. Hamilton, Applied Physics Letters 100
(2012).
date_created: 2019-01-31T11:14:10Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3673837
intvolume: ' 100'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs
heterostructure
type: journal_article
user_id: '42514'
volume: 100
year: '2012'
...
---
_id: '7491'
article_number: '263114'
author:
- first_name: Philipp
full_name: Kröger, Philipp
last_name: Kröger
- first_name: Marcel
full_name: Ruth, Marcel
last_name: Ruth
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Kröger P, Ruth M, Weber N, Meier C. Carrier localization in ZnO quantum wires.
Applied Physics Letters. 2012;100(26). doi:10.1063/1.4731767
apa: Kröger, P., Ruth, M., Weber, N., & Meier, C. (2012). Carrier localization
in ZnO quantum wires. Applied Physics Letters, 100(26). https://doi.org/10.1063/1.4731767
bibtex: '@article{Kröger_Ruth_Weber_Meier_2012, title={Carrier localization in ZnO
quantum wires}, volume={100}, DOI={10.1063/1.4731767},
number={26263114}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Kröger, Philipp and Ruth, Marcel and Weber, Nils and Meier, Cedrik}, year={2012}
}'
chicago: Kröger, Philipp, Marcel Ruth, Nils Weber, and Cedrik Meier. “Carrier Localization
in ZnO Quantum Wires.” Applied Physics Letters 100, no. 26 (2012). https://doi.org/10.1063/1.4731767.
ieee: P. Kröger, M. Ruth, N. Weber, and C. Meier, “Carrier localization in ZnO quantum
wires,” Applied Physics Letters, vol. 100, no. 26, 2012.
mla: Kröger, Philipp, et al. “Carrier Localization in ZnO Quantum Wires.” Applied
Physics Letters, vol. 100, no. 26, 263114, AIP Publishing, 2012, doi:10.1063/1.4731767.
short: P. Kröger, M. Ruth, N. Weber, C. Meier, Applied Physics Letters 100 (2012).
date_created: 2019-02-04T14:30:23Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.4731767
intvolume: ' 100'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Carrier localization in ZnO quantum wires
type: journal_article
user_id: '20798'
volume: 100
year: '2012'
...
---
_id: '22599'
article_number: '114101'
author:
- first_name: A. P.
full_name: Ehiasarian, A. P.
last_name: Ehiasarian
- first_name: A.
full_name: Hecimovic, A.
last_name: Hecimovic
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: R.
full_name: New, R.
last_name: New
- first_name: V.
full_name: Schulz-von der Gathen, V.
last_name: Schulz-von der Gathen
- first_name: M.
full_name: Böke, M.
last_name: Böke
- first_name: J.
full_name: Winter, J.
last_name: Winter
citation:
ama: 'Ehiasarian AP, Hecimovic A, de los Arcos de Pedro MT, et al. High power impulse
magnetron sputtering discharges: Instabilities and plasma self-organization. Applied
Physics Letters. Published online 2012. doi:10.1063/1.3692172'
apa: 'Ehiasarian, A. P., Hecimovic, A., de los Arcos de Pedro, M. T., New, R., Schulz-von
der Gathen, V., Böke, M., & Winter, J. (2012). High power impulse magnetron
sputtering discharges: Instabilities and plasma self-organization. Applied
Physics Letters, Article 114101. https://doi.org/10.1063/1.3692172'
bibtex: '@article{Ehiasarian_Hecimovic_de los Arcos de Pedro_New_Schulz-von der
Gathen_Böke_Winter_2012, title={High power impulse magnetron sputtering discharges:
Instabilities and plasma self-organization}, DOI={10.1063/1.3692172},
number={114101}, journal={Applied Physics Letters}, author={Ehiasarian, A. P.
and Hecimovic, A. and de los Arcos de Pedro, Maria Teresa and New, R. and Schulz-von
der Gathen, V. and Böke, M. and Winter, J.}, year={2012} }'
chicago: 'Ehiasarian, A. P., A. Hecimovic, Maria Teresa de los Arcos de Pedro, R.
New, V. Schulz-von der Gathen, M. Böke, and J. Winter. “High Power Impulse Magnetron
Sputtering Discharges: Instabilities and Plasma Self-Organization.” Applied
Physics Letters, 2012. https://doi.org/10.1063/1.3692172.'
ieee: 'A. P. Ehiasarian et al., “High power impulse magnetron sputtering
discharges: Instabilities and plasma self-organization,” Applied Physics Letters,
Art. no. 114101, 2012, doi: 10.1063/1.3692172.'
mla: 'Ehiasarian, A. P., et al. “High Power Impulse Magnetron Sputtering Discharges:
Instabilities and Plasma Self-Organization.” Applied Physics Letters, 114101,
2012, doi:10.1063/1.3692172.'
short: A.P. Ehiasarian, A. Hecimovic, M.T. de los Arcos de Pedro, R. New, V. Schulz-von
der Gathen, M. Böke, J. Winter, Applied Physics Letters (2012).
date_created: 2021-07-07T11:22:50Z
date_updated: 2023-01-24T08:24:51Z
department:
- _id: '302'
doi: 10.1063/1.3692172
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: 'High power impulse magnetron sputtering discharges: Instabilities and plasma
self-organization'
type: journal_article
user_id: '54556'
year: '2012'
...
---
_id: '39729'
article_number: '223301'
author:
- first_name: B.
full_name: Atorf, B.
last_name: Atorf
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: M. B.
full_name: Ros, M. B.
last_name: Ros
- first_name: N.
full_name: Gimeno, N.
last_name: Gimeno
- first_name: C.
full_name: Tschierske, C.
last_name: Tschierske
- first_name: G.
full_name: Dantlgraber, G.
last_name: Dantlgraber
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized
antiferroelectric liquid crystal based on bent-core molecules. Applied Physics
Letters. 2012;100(22). doi:10.1063/1.4722794
apa: Atorf, B., Hoischen, A., Ros, M. B., Gimeno, N., Tschierske, C., Dantlgraber,
G., & Kitzerow, H.-S. (2012). Switching performance of a polymer-stabilized
antiferroelectric liquid crystal based on bent-core molecules. Applied Physics
Letters, 100(22), Article 223301. https://doi.org/10.1063/1.4722794
bibtex: '@article{Atorf_Hoischen_Ros_Gimeno_Tschierske_Dantlgraber_Kitzerow_2012,
title={Switching performance of a polymer-stabilized antiferroelectric liquid
crystal based on bent-core molecules}, volume={100}, DOI={10.1063/1.4722794},
number={22223301}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Atorf, B. and Hoischen, A. and Ros, M. B. and Gimeno, N. and Tschierske,
C. and Dantlgraber, G. and Kitzerow, Heinz-Siegfried}, year={2012} }'
chicago: Atorf, B., A. Hoischen, M. B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber,
and Heinz-Siegfried Kitzerow. “Switching Performance of a Polymer-Stabilized Antiferroelectric
Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters 100,
no. 22 (2012). https://doi.org/10.1063/1.4722794.
ieee: 'B. Atorf et al., “Switching performance of a polymer-stabilized antiferroelectric
liquid crystal based on bent-core molecules,” Applied Physics Letters,
vol. 100, no. 22, Art. no. 223301, 2012, doi: 10.1063/1.4722794.'
mla: Atorf, B., et al. “Switching Performance of a Polymer-Stabilized Antiferroelectric
Liquid Crystal Based on Bent-Core Molecules.” Applied Physics Letters,
vol. 100, no. 22, 223301, AIP Publishing, 2012, doi:10.1063/1.4722794.
short: B. Atorf, A. Hoischen, M.B. Ros, N. Gimeno, C. Tschierske, G. Dantlgraber,
H.-S. Kitzerow, Applied Physics Letters 100 (2012).
date_created: 2023-01-24T18:39:05Z
date_updated: 2023-01-24T18:39:34Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4722794
intvolume: ' 100'
issue: '22'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Switching performance of a polymer-stabilized antiferroelectric liquid crystal
based on bent-core molecules
type: journal_article
user_id: '254'
volume: 100
year: '2012'
...
---
_id: '39728'
article_number: '051117'
author:
- first_name: Jürgen
full_name: Schmidtke, Jürgen
last_name: Schmidtke
- first_name: Gisela
full_name: Jünnemann, Gisela
last_name: Jünnemann
- first_name: Susanne
full_name: Keuker-Baumann, Susanne
last_name: Keuker-Baumann
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning
of liquid crystal lasers. Applied Physics Letters. 2012;101(5). doi:10.1063/1.4739840
apa: Schmidtke, J., Jünnemann, G., Keuker-Baumann, S., & Kitzerow, H.-S. (2012).
Electrical fine tuning of liquid crystal lasers. Applied Physics Letters,
101(5), Article 051117. https://doi.org/10.1063/1.4739840
bibtex: '@article{Schmidtke_Jünnemann_Keuker-Baumann_Kitzerow_2012, title={Electrical
fine tuning of liquid crystal lasers}, volume={101}, DOI={10.1063/1.4739840},
number={5051117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Schmidtke, Jürgen and Jünnemann, Gisela and Keuker-Baumann, Susanne and
Kitzerow, Heinz-Siegfried}, year={2012} }'
chicago: Schmidtke, Jürgen, Gisela Jünnemann, Susanne Keuker-Baumann, and Heinz-Siegfried
Kitzerow. “Electrical Fine Tuning of Liquid Crystal Lasers.” Applied Physics
Letters 101, no. 5 (2012). https://doi.org/10.1063/1.4739840.
ieee: 'J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, and H.-S. Kitzerow, “Electrical
fine tuning of liquid crystal lasers,” Applied Physics Letters, vol. 101,
no. 5, Art. no. 051117, 2012, doi: 10.1063/1.4739840.'
mla: Schmidtke, Jürgen, et al. “Electrical Fine Tuning of Liquid Crystal Lasers.”
Applied Physics Letters, vol. 101, no. 5, 051117, AIP Publishing, 2012,
doi:10.1063/1.4739840.
short: J. Schmidtke, G. Jünnemann, S. Keuker-Baumann, H.-S. Kitzerow, Applied Physics
Letters 101 (2012).
date_created: 2023-01-24T18:38:22Z
date_updated: 2023-01-24T18:38:50Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.4739840
intvolume: ' 101'
issue: '5'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electrical fine tuning of liquid crystal lasers
type: journal_article
user_id: '254'
volume: 101
year: '2012'
...
---
_id: '7697'
article_number: '223510'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: A.
full_name: Beckel, A.
last_name: Beckel
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: M.
full_name: Geller, M.
last_name: Geller
citation:
ama: 'Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence
of charged InAs quantum dots on the conductance of a two-dimensional electron
gas: Mobility vs. carrier concentration. Applied Physics Letters. 2011;99(22).
doi:10.1063/1.3665070'
apa: 'Marquardt, B., Beckel, A., Lorke, A., Wieck, A. D., Reuter, D., & Geller,
M. (2011). The influence of charged InAs quantum dots on the conductance of a
two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics
Letters, 99(22). https://doi.org/10.1063/1.3665070'
bibtex: '@article{Marquardt_Beckel_Lorke_Wieck_Reuter_Geller_2011, title={The influence
of charged InAs quantum dots on the conductance of a two-dimensional electron
gas: Mobility vs. carrier concentration}, volume={99}, DOI={10.1063/1.3665070},
number={22223510}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Marquardt, B. and Beckel, A. and Lorke, A. and Wieck, A. D. and Reuter,
Dirk and Geller, M.}, year={2011} }'
chicago: 'Marquardt, B., A. Beckel, A. Lorke, A. D. Wieck, Dirk Reuter, and M. Geller.
“The Influence of Charged InAs Quantum Dots on the Conductance of a Two-Dimensional
Electron Gas: Mobility vs. Carrier Concentration.” Applied Physics Letters
99, no. 22 (2011). https://doi.org/10.1063/1.3665070.'
ieee: 'B. Marquardt, A. Beckel, A. Lorke, A. D. Wieck, D. Reuter, and M. Geller,
“The influence of charged InAs quantum dots on the conductance of a two-dimensional
electron gas: Mobility vs. carrier concentration,” Applied Physics Letters,
vol. 99, no. 22, 2011.'
mla: 'Marquardt, B., et al. “The Influence of Charged InAs Quantum Dots on the Conductance
of a Two-Dimensional Electron Gas: Mobility vs. Carrier Concentration.” Applied
Physics Letters, vol. 99, no. 22, 223510, AIP Publishing, 2011, doi:10.1063/1.3665070.'
short: B. Marquardt, A. Beckel, A. Lorke, A.D. Wieck, D. Reuter, M. Geller, Applied
Physics Letters 99 (2011).
date_created: 2019-02-14T09:41:25Z
date_updated: 2022-01-06T07:03:44Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3665070
intvolume: ' 99'
issue: '22'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: 'The influence of charged InAs quantum dots on the conductance of a two-dimensional
electron gas: Mobility vs. carrier concentration'
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '7710'
article_number: '102111'
author:
- first_name: Sven S.
full_name: Buchholz, Sven S.
last_name: Buchholz
- first_name: Ulrich
full_name: Kunze, Ulrich
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Saskia F.
full_name: Fischer, Saskia F.
last_name: Fischer
citation:
ama: Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron
injection into a waveguide interferometer. Applied Physics Letters. 2011;98(10).
doi:10.1063/1.3563714
apa: Buchholz, S. S., Kunze, U., Reuter, D., Wieck, A. D., & Fischer, S. F.
(2011). Mode-filtered electron injection into a waveguide interferometer. Applied
Physics Letters, 98(10). https://doi.org/10.1063/1.3563714
bibtex: '@article{Buchholz_Kunze_Reuter_Wieck_Fischer_2011, title={Mode-filtered
electron injection into a waveguide interferometer}, volume={98}, DOI={10.1063/1.3563714},
number={10102111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas
D. and Fischer, Saskia F.}, year={2011} }'
chicago: Buchholz, Sven S., Ulrich Kunze, Dirk Reuter, Andreas D. Wieck, and Saskia
F. Fischer. “Mode-Filtered Electron Injection into a Waveguide Interferometer.”
Applied Physics Letters 98, no. 10 (2011). https://doi.org/10.1063/1.3563714.
ieee: S. S. Buchholz, U. Kunze, D. Reuter, A. D. Wieck, and S. F. Fischer, “Mode-filtered
electron injection into a waveguide interferometer,” Applied Physics Letters,
vol. 98, no. 10, 2011.
mla: Buchholz, Sven S., et al. “Mode-Filtered Electron Injection into a Waveguide
Interferometer.” Applied Physics Letters, vol. 98, no. 10, 102111, AIP
Publishing, 2011, doi:10.1063/1.3563714.
short: S.S. Buchholz, U. Kunze, D. Reuter, A.D. Wieck, S.F. Fischer, Applied Physics
Letters 98 (2011).
date_created: 2019-02-14T10:32:36Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3563714
intvolume: ' 98'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Mode-filtered electron injection into a waveguide interferometer
type: journal_article
user_id: '42514'
volume: 98
year: '2011'
...
---
_id: '7711'
article_number: '081911'
author:
- first_name: Y. S.
full_name: Chen, Y. S.
last_name: Chen
- first_name: J.
full_name: Huang, J.
last_name: Huang
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
citation:
ama: Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected
nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics
Letters. 2011;98(8). doi:10.1063/1.3553503
apa: Chen, Y. S., Huang, J., Reuter, D., Ludwig, A., Wieck, A. D., & Bacher,
G. (2011). Optically detected nuclear magnetic resonance in n-GaAs using an on-chip
microcoil. Applied Physics Letters, 98(8). https://doi.org/10.1063/1.3553503
bibtex: '@article{Chen_Huang_Reuter_Ludwig_Wieck_Bacher_2011, title={Optically detected
nuclear magnetic resonance in n-GaAs using an on-chip microcoil}, volume={98},
DOI={10.1063/1.3553503}, number={8081911},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Y.
S. and Huang, J. and Reuter, Dirk and Ludwig, A. and Wieck, A. D. and Bacher,
G.}, year={2011} }'
chicago: Chen, Y. S., J. Huang, Dirk Reuter, A. Ludwig, A. D. Wieck, and G. Bacher.
“Optically Detected Nuclear Magnetic Resonance in N-GaAs Using an on-Chip Microcoil.”
Applied Physics Letters 98, no. 8 (2011). https://doi.org/10.1063/1.3553503.
ieee: Y. S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically
detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil,” Applied
Physics Letters, vol. 98, no. 8, 2011.
mla: Chen, Y. S., et al. “Optically Detected Nuclear Magnetic Resonance in N-GaAs
Using an on-Chip Microcoil.” Applied Physics Letters, vol. 98, no. 8, 081911,
AIP Publishing, 2011, doi:10.1063/1.3553503.
short: Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A.D. Wieck, G. Bacher, Applied
Physics Letters 98 (2011).
date_created: 2019-02-14T10:33:23Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3553503
intvolume: ' 98'
issue: '8'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil
type: journal_article
user_id: '42514'
volume: 98
year: '2011'
...
---
_id: '7311'
article_number: '051102'
author:
- first_name: Henning
full_name: Soldat, Henning
last_name: Soldat
- first_name: Mingyuan
full_name: Li, Mingyuan
last_name: Li
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ebbing, Astrid
last_name: Ebbing
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
citation:
ama: Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length
in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662
apa: Soldat, H., Li, M., Gerhardt, N. C., Hofmann, M. R., Ludwig, A., Ebbing, A.,
… Wende, H. (2011). Room temperature spin relaxation length in spin light-emitting
diodes. Applied Physics Letters, 99(5). https://doi.org/10.1063/1.3622662
bibtex: '@article{Soldat_Li_Gerhardt_Hofmann_Ludwig_Ebbing_Reuter_Wieck_Stromberg_Keune_et
al._2011, title={Room temperature spin relaxation length in spin light-emitting
diodes}, volume={99}, DOI={10.1063/1.3622662},
number={5051102}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Soldat, Henning and Li, Mingyuan and Gerhardt, Nils C. and Hofmann, Martin
R. and Ludwig, Arne and Ebbing, Astrid and Reuter, Dirk and Wieck, Andreas D.
and Stromberg, Frank and Keune, Werner and et al.}, year={2011} }'
chicago: Soldat, Henning, Mingyuan Li, Nils C. Gerhardt, Martin R. Hofmann, Arne
Ludwig, Astrid Ebbing, Dirk Reuter, et al. “Room Temperature Spin Relaxation Length
in Spin Light-Emitting Diodes.” Applied Physics Letters 99, no. 5 (2011).
https://doi.org/10.1063/1.3622662.
ieee: H. Soldat et al., “Room temperature spin relaxation length in spin
light-emitting diodes,” Applied Physics Letters, vol. 99, no. 5, 2011.
mla: Soldat, Henning, et al. “Room Temperature Spin Relaxation Length in Spin Light-Emitting
Diodes.” Applied Physics Letters, vol. 99, no. 5, 051102, AIP Publishing,
2011, doi:10.1063/1.3622662.
short: H. Soldat, M. Li, N.C. Gerhardt, M.R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter,
A.D. Wieck, F. Stromberg, W. Keune, H. Wende, Applied Physics Letters 99 (2011).
date_created: 2019-01-31T10:21:25Z
date_updated: 2022-01-06T07:03:34Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3622662
intvolume: ' 99'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Room temperature spin relaxation length in spin light-emitting diodes
type: journal_article
user_id: '42514'
volume: 99
year: '2011'
...
---
_id: '39735'
article_number: '241106'
author:
- first_name: Alexander
full_name: Lorenz, Alexander
last_name: Lorenz
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid
crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848
apa: Lorenz, A., & Kitzerow, H.-S. (2011). Efficient electro-optic switching
in a photonic liquid crystal fiber. Applied Physics Letters, 98(24),
Article 241106. https://doi.org/10.1063/1.3599848
bibtex: '@article{Lorenz_Kitzerow_2011, title={Efficient electro-optic switching
in a photonic liquid crystal fiber}, volume={98}, DOI={10.1063/1.3599848},
number={24241106}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lorenz, Alexander and Kitzerow, Heinz-Siegfried}, year={2011} }'
chicago: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic
Switching in a Photonic Liquid Crystal Fiber.” Applied Physics Letters
98, no. 24 (2011). https://doi.org/10.1063/1.3599848.
ieee: 'A. Lorenz and H.-S. Kitzerow, “Efficient electro-optic switching in a photonic
liquid crystal fiber,” Applied Physics Letters, vol. 98, no. 24, Art. no.
241106, 2011, doi: 10.1063/1.3599848.'
mla: Lorenz, Alexander, and Heinz-Siegfried Kitzerow. “Efficient Electro-Optic Switching
in a Photonic Liquid Crystal Fiber.” Applied Physics Letters, vol. 98,
no. 24, 241106, AIP Publishing, 2011, doi:10.1063/1.3599848.
short: A. Lorenz, H.-S. Kitzerow, Applied Physics Letters 98 (2011).
date_created: 2023-01-24T18:42:25Z
date_updated: 2023-01-24T18:42:50Z
department:
- _id: '313'
- _id: '230'
- _id: '638'
doi: 10.1063/1.3599848
intvolume: ' 98'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Efficient electro-optic switching in a photonic liquid crystal fiber
type: journal_article
user_id: '254'
volume: 98
year: '2011'
...
---
_id: '7975'
article_number: '033111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled
InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied
Physics Letters. 2010;96(3). doi:10.1063/1.3293445
apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic
structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage
spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445
bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy},
volume={96}, DOI={10.1063/1.3293445},
number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic
Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage
Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.
ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,”
Applied Physics Letters, vol. 96, no. 3, 2010.
mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum
Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters,
vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.
short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
96 (2010).
date_created: 2019-02-21T13:32:39Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3293445
intvolume: ' 96'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by
capacitance-voltage spectroscopy
type: journal_article
user_id: '42514'
volume: 96
year: '2010'
...
---
_id: '7980'
article_number: '033111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled
InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied
Physics Letters. 2010;96(3). doi:10.1063/1.3293445
apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic
structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage
spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445
bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy},
volume={96}, DOI={10.1063/1.3293445},
number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic
Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage
Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445.
ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure
of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,”
Applied Physics Letters, vol. 96, no. 3, 2010.
mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum
Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters,
vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445.
short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
96 (2010).
date_created: 2019-02-21T14:13:43Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3293445
intvolume: ' 96'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by
capacitance-voltage spectroscopy
type: journal_article
user_id: '42514'
volume: 96
year: '2010'
...
---
_id: '7982'
article_number: '022110'
author:
- first_name: M.
full_name: Csontos, M.
last_name: Csontos
- first_name: Y.
full_name: Komijani, Y.
last_name: Komijani
- first_name: I.
full_name: Shorubalko, I.
last_name: Shorubalko
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures
in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2).
doi:10.1063/1.3463465
apa: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck,
A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics
Letters, 97(2). https://doi.org/10.1063/1.3463465
bibtex: '@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures
in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465},
number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter,
Dirk and Wieck, A. D.}, year={2010} }'
chicago: Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A.
D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics
Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465.
ieee: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck,
“Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters,
vol. 97, no. 2, 2010.
mla: Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied
Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465.
short: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck,
Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:33:40Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3463465
intvolume: ' 97'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nanostructures in p-GaAs with improved tunability
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7983'
article_number: '062112'
author:
- first_name: M.
full_name: Wiemann, M.
last_name: Wiemann
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based
upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922
apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010).
Full-wave rectification based upon hot-electron thermopower. Applied Physics
Letters, 97(6). https://doi.org/10.1063/1.3475922
bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification
based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922},
number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A.
D.}, year={2010} }'
chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave
Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters
97, no. 6 (2010). https://doi.org/10.1063/1.3475922.
ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification
based upon hot-electron thermopower,” Applied Physics Letters, vol. 97,
no. 6, 2010.
mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.”
Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010,
doi:10.1063/1.3475922.
short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
97 (2010).
date_created: 2019-02-21T14:34:50Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3475922
intvolume: ' 97'
issue: '6'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Full-wave rectification based upon hot-electron thermopower
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '7990'
article_number: '143101'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: C.
full_name: Meier, C.
last_name: Meier
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, A. and Meier, C.}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized
Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2019-02-21T14:41:19Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '42514'
volume: 97
year: '2010'
...
---
_id: '4550'
abstract:
- lang: eng
text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled
molecular beam epitaxial growth into the intrinsic region of a p-i-n junction
diode. This is achieved using an in situ combination of focused ion beam prepatterning,
annealing, and overgrowth, resulting in arrays of individually electrically addressable
(In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence
spectroscopy we demonstrate that these QDs have the same optical quality as optically
pumped Stranski–Krastanov QDs with random nucleation located in proximity to a
doped interface. The results suggest that this technique is scalable and highly
interesting for different applications in quantum devices.
article_number: '143101'
article_type: original
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Michaelis de Vasconcellos, S.
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot
in a micron sized light emitting diode. Applied Physics Letters, 97(14).
https://doi.org/10.1063/1.3488812
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010,
title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light
emitting diode}, volume={97}, DOI={10.1063/1.3488812},
number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos,
S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }'
chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur
Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot
in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no.
14 (2010). https://doi.org/10.1063/1.3488812.
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized
light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010.
mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron
Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14,
143101, AIP Publishing, 2010, doi:10.1063/1.3488812.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Applied Physics Letters 97 (2010).
date_created: 2018-09-20T12:38:51Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1063/1.3488812
intvolume: ' 97'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting
diode
type: journal_article
user_id: '20798'
volume: 97
year: '2010'
...
---
_id: '4194'
abstract:
- lang: eng
text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar
cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy.
The device shows a clear field effect at positive bias voltages with V_th=0.6
V. The HFET output characteristics were calculated using ATLAS simulation program.
The electron channel at the cubic AlGaN/GaN interface was detected by room temperature
capacitance-voltage measurements.
article_number: '253501'
article_type: original
author:
- first_name: E.
full_name: Tschumak, E.
last_name: Tschumak
- first_name: R.
full_name: Granzner, R.
last_name: Granzner
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: F.
full_name: Schwierz, F.
last_name: Schwierz
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: H.
full_name: Nagasawa, H.
last_name: Nagasawa
- first_name: M.
full_name: Abe, M.
last_name: Abe
- first_name: Donald
full_name: As, Donald
last_name: As
citation:
ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction
field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters.
2010;96(25). doi:10.1063/1.3455066
apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa,
H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor
on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).
https://doi.org/10.1063/1.3455066
bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010,
title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+
implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066},
number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka,
K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }'
chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor
on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010).
https://doi.org/10.1063/1.3455066.
ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect
transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol.
96, no. 25, 2010.
mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect
Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol.
96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066.
short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa,
M. Abe, D. As, Applied Physics Letters 96 (2010).
date_created: 2018-08-28T11:56:08Z
date_updated: 2022-01-06T07:00:33Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1063/1.3455066
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-28T11:58:27Z
date_updated: 2018-08-28T11:58:27Z
file_id: '4195'
file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf
file_size: 277385
relation: main_file
success: 1
file_date_updated: 2018-08-28T11:58:27Z
has_accepted_license: '1'
intvolume: ' 96'
issue: '25'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted
3C–SiC (001)
type: journal_article
user_id: '55706'
volume: 96
year: '2010'
...
---
_id: '7973'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009;94(2). doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz,
S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009}
}'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, vol. 94, no. 2, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107,
AIP Publishing, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters 94 (2009).
date_created: 2019-02-21T13:28:29Z
date_updated: 2022-01-06T07:03:48Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
intvolume: ' 94'
issue: '2'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
volume: 94
year: '2009'
...
---
_id: '8579'
article_number: '022107'
author:
- first_name: S. S.
full_name: Buchholz, S. S.
last_name: Buchholz
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring. Applied Physics Letters.
2009. doi:10.1063/1.3069281
apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D.
(2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum
ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281
bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm
conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281},
number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and
Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck.
“Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.”
Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281.
ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal
Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied
Physics Letters, 2009.
mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in
an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281.
short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:34:37Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3069281
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8580'
article_number: '023107'
author:
- first_name: J. H.
full_name: Blokland, J. H.
last_name: Blokland
- first_name: M.
full_name: Bozkurt, M.
last_name: Bozkurt
- first_name: J. M.
full_name: Ulloa, J. M.
last_name: Ulloa
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: P. M.
full_name: Koenraad, P. M.
last_name: Koenraad
- first_name: P. C. M.
full_name: Christianen, P. C. M.
last_name: Christianen
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
citation:
ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed
by cross-sectional scanning tunneling microscopy. Applied Physics Letters.
2009. doi:10.1063/1.3072366
apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad,
P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366
bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009,
title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy}, DOI={10.1063/1.3072366},
number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and
Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P.
M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }'
chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P.
M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots
Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics
Letters, 2009. https://doi.org/10.1063/1.3072366.
ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional
scanning tunneling microscopy,” Applied Physics Letters, 2009.
mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional
Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009,
doi:10.1063/1.3072366.
short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad,
P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009).
date_created: 2019-03-26T08:42:07Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3072366
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling
microscopy
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '8585'
article_number: '022113'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: M.
full_name: Geller, M.
last_name: Geller
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724
apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009).
Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots. Applied Physics Letters.
https://doi.org/10.1063/1.3175724
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots}, DOI={10.1063/1.3175724},
number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and
Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using
a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and
Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters,
2009. https://doi.org/10.1063/1.3175724.
ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots,” Applied Physics Letters, 2009.
mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium
Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied
Physics Letters, 022113, 2009, doi:10.1063/1.3175724.
short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:55:40Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3175724
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '7640'
article_number: '193111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: M.
full_name: Offer, M.
last_name: Offer
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: O.
full_name: Wibbelhoff, O.
last_name: Wibbelhoff
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum
dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics
Letters. 2008;92(19). doi:10.1063/1.2920439
apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., &
Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy. Applied Physics Letters, 92(19).
https://doi.org/10.1063/1.2920439
bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing
the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence
spectroscopy}, volume={92}, DOI={10.1063/1.2920439},
number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik
and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }'
chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff,
and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19
(2008). https://doi.org/10.1063/1.2920439.
ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots
by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics
Letters, vol. 92, no. 19, 2008.
mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92,
no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.
short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck,
Applied Physics Letters 92 (2008).
date_created: 2019-02-13T11:30:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2920439
extern: '1'
intvolume: ' 92'
issue: '19'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy
type: journal_article
user_id: '20798'
volume: 92
year: '2008'
...
---
_id: '8603'
article_number: '112111'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Y.
full_name: Cordier, Y.
last_name: Cordier
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted
wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied
Physics Letters. 2008. doi:10.1063/1.2899968
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008).
Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968
bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures},
DOI={10.1063/1.2899968}, number={112111},
journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter,
Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport
in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.
ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,”
Applied Physics Letters, 2008.
mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN
High Electron Mobility Transistor Structures.” Applied Physics Letters,
112111, 2008, doi:10.1063/1.2899968.
short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:26:36Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2899968
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8607'
article_number: '241920'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: J.
full_name: Nannen, J.
last_name: Nannen
- first_name: S.
full_name: Halm, S.
last_name: Halm
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: M.
full_name: Wahle, M.
last_name: Wahle
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs
hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279
apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F.,
… Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room
temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279
bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008,
title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature},
DOI={10.1063/1.2943279}, number={241920},
journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm,
S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk
and Wieck, A. D.}, year={2008} }'
chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer,
U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs
Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279.
ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids
at room temperature,” Applied Physics Letters, 2008.
mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at
Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279.
short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze,
D. Reuter, A.D. Wieck, Applied Physics Letters (2008).
date_created: 2019-03-26T09:51:24Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2943279
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8608'
article_number: '242102'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced
spins both at room temperature and in remanence. Applied Physics Letters.
2008. doi:10.1063/1.2948856
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A.
D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at
room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et
al._2008, title={Electrical detection of photoinduced spins both at room temperature
and in remanence}, DOI={10.1063/1.2948856},
number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt,
N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D.
Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at
Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856.
ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at
room temperature and in remanence,” Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room
Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E.
Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters
(2008).
date_created: 2019-03-26T09:52:27Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2948856
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electrical detection of photoinduced spins both at room temperature and in
remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8609'
article_number: '021117'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection
in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter,
D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence.
Applied Physics Letters. https://doi.org/10.1063/1.2957469
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et
al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117},
journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann,
M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Wende, H. and Keune, W. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter,
A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469.
ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,”
Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D.
Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:53:44Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2957469
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Room temperature electrical spin injection in remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '39749'
article_number: '131903'
author:
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: S. A.
full_name: Benning, S. A.
last_name: Benning
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed
by photopolymerization of dissipative structures. Applied Physics Letters.
2008;93(13). doi:10.1063/1.2990762
apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures. Applied Physics
Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762
bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures}, volume={93},
DOI={10.1063/1.2990762}, number={13131903},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen,
A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer
Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied
Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762.
ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns
fixed by photopolymerization of dissipative structures,” Applied Physics Letters,
vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.'
mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization
of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903,
AIP Publishing, 2008, doi:10.1063/1.2990762.
short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:52:43Z
date_updated: 2023-01-24T18:53:04Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2990762
intvolume: ' 93'
issue: '13'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Submicrometer periodic patterns fixed by photopolymerization of dissipative
structures
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '39751'
article_number: '183304'
author:
- first_name: Andreas
full_name: Redler, Andreas
last_name: Redler
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties
of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18).
doi:10.1063/1.3021364
apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal. Applied Physics Letters,
93(18), Article 183304. https://doi.org/10.1063/1.3021364
bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364},
number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on
the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364.
ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal,” Applied Physics Letters,
vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.'
mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the
Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364.
short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:53:20Z
date_updated: 2023-01-24T18:53:34Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.3021364
intvolume: ' 93'
issue: '18'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of doping on the photorefractive properties of a polymer-dispersed
liquid crystal
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '26076'
article_number: '151109'
author:
- first_name: Xiao-Feng
full_name: Han, Xiao-Feng
last_name: Han
- first_name: Yu-Xiang
full_name: Weng, Yu-Xiang
last_name: Weng
- first_name: Rui
full_name: Wang, Rui
last_name: Wang
- first_name: Xi-Hao
full_name: Chen, Xi-Hao
last_name: Chen
- first_name: Kai Hong
full_name: Luo, Kai Hong
id: '36389'
last_name: Luo
orcid: 0000-0003-1008-4976
- first_name: Ling-An
full_name: Wu, Ling-An
last_name: Wu
- first_name: Jimin
full_name: Zhao, Jimin
last_name: Zhao
citation:
ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical
switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540
apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., &
Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied
Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540
bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level
ultrafast all-optical switching}, DOI={10.1063/1.2909540},
number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and
Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An
and Zhao, Jimin}, year={2008} }'
chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An
Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied
Physics Letters, 2008. https://doi.org/10.1063/1.2909540.
ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,”
Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.'
mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.”
Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540.
short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao,
Applied Physics Letters (2008).
date_created: 2021-10-12T08:46:00Z
date_updated: 2023-01-26T10:08:30Z
doi: 10.1063/1.2909540
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-photon level ultrafast all-optical switching
type: journal_article
user_id: '36389'
year: '2008'
...
---
_id: '1761'
article_number: '151109'
author:
- first_name: Carsten
full_name: Rockstuhl, Carsten
last_name: Rockstuhl
- first_name: Falk
full_name: Lederer, Falk
last_name: Lederer
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Harald
full_name: Giessen, Harald
last_name: Giessen
citation:
ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic,
quasiperiodic, and random nanoaperture arrays. Applied Physics Letters.
2007;91(15). doi:10.1063/1.2799240
apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced
transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied
Physics Letters, 91(15). https://doi.org/10.1063/1.2799240
bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl,
Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007}
}'
chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen.
“Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.”
Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240.
ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics
Letters, vol. 91, no. 15, 2007.
mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic,
and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no.
15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240.
short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters
91 (2007).
date_created: 2018-03-23T13:07:38Z
date_updated: 2022-01-06T06:53:16Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2799240
intvolume: ' 91'
issue: '15'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays
type: journal_article
user_id: '30525'
volume: 91
year: '2007'
...
---
_id: '7644'
article_number: '143113'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
citation:
ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities
out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612
apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal
nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612
bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic
crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612},
number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }'
chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic
Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14
(2007). https://doi.org/10.1063/1.2719612.
ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities
out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007.
mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal
Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113,
AIP Publishing, 2007, doi:10.1063/1.2719612.
short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007).
date_created: 2019-02-13T11:34:33Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2719612
extern: '1'
intvolume: ' 90'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Technique for tilting GaAs photonic crystal nanocavities out of plane
type: journal_article
user_id: '20798'
volume: 90
year: '2007'
...
---
_id: '8630'
article_number: '262505'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: V.
full_name: Ney, V.
last_name: Ney
- first_name: T.
full_name: Kammermeier, T.
last_name: Kammermeier
- first_name: A.
full_name: Ney, A.
last_name: Ney
- first_name: J.
full_name: Schörmann, J.
last_name: Schörmann
- first_name: S.
full_name: Potthast, S.
last_name: Potthast
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of
Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T.,
… Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende
GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113
bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et
al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende
GaN}, DOI={10.1063/1.2753113},
number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov,
A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney,
A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier,
A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.
ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted
zinc-blende GaN,” Applied Physics Letters, 2007.
mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.
short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A.
Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).
date_created: 2019-03-26T10:23:42Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2753113
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetic and structural properties of Gd-implanted zinc-blende GaN
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '8632'
article_number: '123108'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A.
full_name: Remhof, A.
last_name: Remhof
citation:
ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation
induced site-selective growth of InAs quantum dots. Applied Physics Letters.
2007. doi:10.1063/1.2786836
apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007).
Focused ion beam implantation induced site-selective growth of InAs quantum dots.
Applied Physics Letters. https://doi.org/10.1063/1.2786836
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam
implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836},
number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter,
Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }'
chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused
Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2786836.
ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion
beam implantation induced site-selective growth of InAs quantum dots,” Applied
Physics Letters, 2007.
mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth
of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.
short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics
Letters (2007).
date_created: 2019-03-26T10:26:08Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2786836
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Focused ion beam implantation induced site-selective growth of InAs quantum
dots
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '25986'
abstract:
- lang: eng
text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically
ordered, uniform pore system with crystalline pore walls. The crystalline structure
is investigated by x-ray diffraction, transmission electron microscopy, and selected
area electron diffraction. The large specific surface area and the uniformity
of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy
along with low-temperature photoluminescence measurements confirms the high degree
of crystallinity and gives insight into defects participating in the radiative
recombination processes.\r\nThe authors thank Günter Koch for recording the TEM
images and Marie-Luise Wolff for valuable help in the laboratory one of the authors
(M.T.) thanks Michael Fröba for the continuous support."
article_number: '123108'
article_type: original
author:
- first_name: T.
full_name: Waitz, T.
last_name: Waitz
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: P. J.
full_name: Klar, P. J.
last_name: Klar
- first_name: J.
full_name: Sann, J.
last_name: Sann
- first_name: J.
full_name: Stehr, J.
last_name: Stehr
- first_name: B. K.
full_name: Meyer, B. K.
last_name: Meyer
citation:
ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with
an enhanced surface area obtained by nanocasting. Applied Physics Letters.
Published online 2007. doi:10.1063/1.2713872
apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K.
(2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting.
Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872
bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO
with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872},
number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann,
Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007}
}'
chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer.
“Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2713872.
ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline
ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics
Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.'
mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by
Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872.
short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics
Letters (2007).
date_created: 2021-10-09T09:40:39Z
date_updated: 2023-03-09T08:49:01Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1063/1.2713872
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
quality_controlled: '1'
status: public
title: Crystalline ZnO with an enhanced surface area obtained by nanocasting
type: journal_article
user_id: '23547'
year: '2007'
...
---
_id: '39561'
article_number: '013501'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: V.
full_name: Zaporojtchenko, V.
last_name: Zaporojtchenko
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: T.
full_name: Diekmann, T.
last_name: Diekmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage
of organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters. 2007;90(1). doi:10.1063/1.2426926
apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C.,
Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of
organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926
bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007,
title={Tuning the threshold voltage of organic field-effect transistors by an
electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926},
number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and
Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }'
chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann,
T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic
Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics
Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.
ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect
transistors by an electret encapsulating layer,” Applied Physics Letters,
vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.'
mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect
Transistors by an Electret Encapsulating Layer.” Applied Physics Letters,
vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.
short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T.
Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).
date_created: 2023-01-24T12:15:22Z
date_updated: 2023-03-21T10:15:06Z
department:
- _id: '59'
doi: 10.1063/1.2426926
intvolume: ' 90'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tuning the threshold voltage of organic field-effect transistors by an electret
encapsulating layer
type: journal_article
user_id: '20179'
volume: 90
year: '2007'
...
---
_id: '7651'
article_number: '031111'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
- first_name: Elaine D.
full_name: Haberer, Elaine D.
last_name: Haberer
- first_name: Rajat
full_name: Sharma, Rajat
last_name: Sharma
- first_name: Yong-Seok
full_name: Choi, Yong-Seok
last_name: Choi
- first_name: Kelly
full_name: McGroddy, Kelly
last_name: McGroddy
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: Evelyn L.
full_name: Hu, Evelyn L.
last_name: Hu
citation:
ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based
photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3).
doi:10.1063/1.2166680
apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy,
K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane
cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680
bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006,
title={Visible resonant modes in GaN-based photonic crystal membrane cavities},
volume={88}, DOI={10.1063/1.2166680},
number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat
and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven
P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }'
chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok
Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn
L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.”
Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680.
ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal
membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.
mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal
Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP
Publishing, 2006, doi:10.1063/1.2166680.
short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy,
S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).
date_created: 2019-02-13T11:41:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2166680
extern: '1'
intvolume: ' 88'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Visible resonant modes in GaN-based photonic crystal membrane cavities
type: journal_article
user_id: '20798'
volume: 88
year: '2006'
...
---
_id: '8648'
article_number: '082110'
author:
- first_name: M.
full_name: Knop, M.
last_name: Knop
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an
asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618
apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic
rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters.
https://doi.org/10.1063/1.2179618
bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification
in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618},
number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser,
U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic
Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics
Letters, 2006. https://doi.org/10.1063/1.2179618.
ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification
in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006.
mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross
Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618.
short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
(2006).
date_created: 2019-03-27T07:54:36Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2179618
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ballistic rectification in an asymmetric mesoscopic cross junction
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8654'
article_number: '121115'
author:
- first_name: R.
full_name: Schmidt, R.
last_name: Schmidt
- first_name: U.
full_name: Scholz, U.
last_name: Scholz
- first_name: M.
full_name: Vitzethum, M.
last_name: Vitzethum
- first_name: R.
full_name: Fix, R.
last_name: Fix
- first_name: C.
full_name: Metzner, C.
last_name: Metzner
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: M. C.
full_name: Hübner, M. C.
last_name: Hübner
- first_name: S.
full_name: Stufler, S.
last_name: Stufler
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: S.
full_name: Malzer, S.
last_name: Malzer
- first_name: G. H.
full_name: Döhler, G. H.
last_name: Döhler
citation:
ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot
light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057
apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P.,
… Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting
diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057
bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et
al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes},
DOI={10.1063/1.2188057}, number={121115},
journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum,
M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A.
and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }'
chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit,
Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.
ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting
diodes,” Applied Physics Letters, 2006.
mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057.
short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D.
Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler,
Applied Physics Letters (2006).
date_created: 2019-03-27T08:21:39Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2188057
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of genuine single-quantum-dot light-emitting diodes
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8665'
article_number: '123105'
author:
- first_name: V.
full_name: Stavarache, V.
last_name: Stavarache
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Schwab, M.
last_name: Schwab
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: R.
full_name: Oulton, R.
last_name: Oulton
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by
lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233
apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton,
R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric
fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233
bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control
of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233},
number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and
Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R.
and Bayer, M.}, year={2006} }'
chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R.
Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.”
Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233.
ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric
fields,” Applied Physics Letters, 2006.
mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric
Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233.
short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton,
M. Bayer, Applied Physics Letters (2006).
date_created: 2019-03-27T08:39:57Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2345233
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Control of quantum dot excitons by lateral electric fields
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8671'
article_number: '231101'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk
GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909
apa: Hohage, P. E., Bacher, G., Reuter, D., & Wieck, A. D. (2006). Coherent
spin oscillations in bulk GaAs at room temperature. Applied Physics Letters.
https://doi.org/10.1063/1.2398909
bibtex: '@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations
in bulk GaAs at room temperature}, DOI={10.1063/1.2398909},
number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and
Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin
Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters,
2006. https://doi.org/10.1063/1.2398909.
ieee: P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations
in bulk GaAs at room temperature,” Applied Physics Letters, 2006.
mla: Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.”
Applied Physics Letters, 231101, 2006, doi:10.1063/1.2398909.
short: P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).
date_created: 2019-03-27T09:15:03Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2398909
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin oscillations in bulk GaAs at room temperature
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '29684'
article_number: '012502'
author:
- first_name: Andy
full_name: Thomas, Andy
last_name: Thomas
- first_name: Dirk
full_name: Meyners, Dirk
last_name: Meyners
- first_name: Daniel
full_name: Ebke, Daniel
last_name: Ebke
- first_name: Ning-Ning
full_name: Liu, Ning-Ning
last_name: Liu
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: Jan
full_name: Schmalhorst, Jan
last_name: Schmalhorst
- first_name: Günter
full_name: Reiss, Günter
last_name: Reiss
- first_name: Hubert
full_name: Ebert, Hubert
last_name: Ebert
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
citation:
ama: Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys
for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333
apa: Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J.,
Reiss, G., Ebert, H., & Hütten, A. (2006). Inverted spin polarization of Heusler
alloys for spintronic devices. Applied Physics Letters, 89(1), Article
012502. https://doi.org/10.1063/1.2219333
bibtex: '@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006,
title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89},
DOI={10.1063/1.2219333}, number={1012502},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas,
Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and
Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006}
}'
chicago: Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan
Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization
of Heusler Alloys for Spintronic Devices.” Applied Physics Letters 89,
no. 1 (2006). https://doi.org/10.1063/1.2219333.
ieee: 'A. Thomas et al., “Inverted spin polarization of Heusler alloys for
spintronic devices,” Applied Physics Letters, vol. 89, no. 1, Art. no.
012502, 2006, doi: 10.1063/1.2219333.'
mla: Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic
Devices.” Applied Physics Letters, vol. 89, no. 1, 012502, AIP Publishing,
2006, doi:10.1063/1.2219333.
short: A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G.
Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006).
date_created: 2022-01-31T10:16:33Z
date_updated: 2022-01-31T10:16:56Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2219333
extern: '1'
intvolume: ' 89'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Inverted spin polarization of Heusler alloys for spintronic devices
type: journal_article
user_id: '26883'
volume: 89
year: '2006'
...
---
_id: '7653'
article_number: '243101'
author:
- first_name: Y.-S.
full_name: Choi, Y.-S.
last_name: Choi
- first_name: K.
full_name: Hennessy, K.
last_name: Hennessy
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E.
full_name: Haberer, E.
last_name: Haberer
- first_name: Y.
full_name: Gao, Y.
last_name: Gao
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713
apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P.,
… Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied
Physics Letters, 87(24). https://doi.org/10.1063/1.2147713
bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005,
title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S.
and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P.
and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }'
chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars,
S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713.
ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,”
Applied Physics Letters, vol. 87, no. 24, 2005.
mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied
Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713.
short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S.
Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:47:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2147713
extern: '1'
intvolume: ' 87'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: GaN blue photonic crystal membrane nanocavities
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7654'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters, 87(16).
https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, volume={87}, DOI={10.1063/1.2112192},
number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk
and Wieck, Andreas D.}, year={2005} }'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005).
https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, vol. 87, no. 16, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:48:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2112192
extern: '1'
intvolume: ' 87'
issue: '16'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7655'
article_number: '101107'
author:
- first_name: A.
full_name: David, A.
last_name: David
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: F. S.
full_name: Diana, F. S.
last_name: Diana
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E.
full_name: Hu, E.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: C.
full_name: Weisbuch, C.
last_name: Weisbuch
- first_name: H.
full_name: Benisty, H.
last_name: Benisty
citation:
ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned
multimode GaN waveguides for light extraction. Applied Physics Letters.
2005;87(10). doi:10.1063/1.2039987
apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., …
Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN
waveguides for light extraction. Applied Physics Letters, 87(10).
https://doi.org/10.1063/1.2039987
bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005,
title={Photonic bands in two-dimensionally patterned multimode GaN waveguides
for light extraction}, volume={87}, DOI={10.1063/1.2039987},
number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars,
S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005}
}'
chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu,
S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally
Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters
87, no. 10 (2005). https://doi.org/10.1063/1.2039987.
ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode
GaN waveguides for light extraction,” Applied Physics Letters, vol. 87,
no. 10, 2005.
mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode
GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87,
no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987.
short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura,
C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:48:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2039987
extern: '1'
intvolume: ' 87'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for
light extraction
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7656'
article_number: '051107'
author:
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
citation:
ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based
air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380
apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005).
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated
using band-gap-selective photoelectrochemical etching. Applied Physics Letters,
87(5). https://doi.org/10.1063/1.2008380
bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented
GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380},
number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura,
S.}, year={2005} }'
chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically
Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using
Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters
87, no. 5 (2005). https://doi.org/10.1063/1.2008380.
ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically
oriented GaN-based air-gap distributed Bragg reflector structure fabricated using
band-gap-selective photoelectrochemical etching,” Applied Physics Letters,
vol. 87, no. 5, 2005.
mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg
Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.”
Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005,
doi:10.1063/1.2008380.
short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:50:37Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2008380
extern: '1'
intvolume: ' 87'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure
fabricated using band-gap-selective photoelectrochemical etching
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7659'
article_number: '031901'
author:
- first_name: Arpan
full_name: Chakraborty, Arpan
last_name: Chakraborty
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Benjamin A.
full_name: Haskell, Benjamin A.
last_name: Haskell
- first_name: Salka
full_name: Keller, Salka
last_name: Keller
- first_name: Patrick
full_name: Waltereit, Patrick
last_name: Waltereit
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: James S.
full_name: Speck, James S.
last_name: Speck
- first_name: Umesh K.
full_name: Mishra, Umesh K.
last_name: Mishra
citation:
ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN
multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied
Physics Letters. 2005;86(3). doi:10.1063/1.1851007
apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit,
P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics
Letters, 86(3). https://doi.org/10.1063/1.1851007
bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005,
title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on
lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007},
number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin
A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura,
Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }'
chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka
Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck,
and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum
Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics
Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007.
ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied
Physics Letters, vol. 86, no. 3, 2005.
mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple
Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied
Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007.
short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit,
S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86
(2005).
date_created: 2019-02-13T12:27:05Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1851007
extern: '1'
intvolume: ' 86'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral
epitaxially overgrown a-plane GaN
type: journal_article
user_id: '20798'
volume: 86
year: '2005'
...
---
_id: '8679'
article_number: '162110'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Werner, C.
last_name: Werner
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
citation:
ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional
lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829
apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion
characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters.
https://doi.org/10.1063/1.1897829
bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics
of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829},
number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner,
C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }'
chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics
of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005.
https://doi.org/10.1063/1.1897829.
ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics
of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005.
mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral
P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829.
short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005).
date_created: 2019-03-27T09:32:08Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1897829
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Depletion characteristics of two-dimensional lateral p‐n-junctions
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8683'
article_number: '042104'
author:
- first_name: T.
full_name: Müller, T.
last_name: Müller
- first_name: A.
full_name: Würtz, A.
last_name: Würtz
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a
driven electron ratchet in a two-dimensional electron system. Applied Physics
Letters. 2005. doi:10.1063/1.2001740
apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form
sampling using a driven electron ratchet in a two-dimensional electron system.
Applied Physics Letters. https://doi.org/10.1063/1.2001740
bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104},
journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke,
A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }'
chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form
Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.”
Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740.
ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system,” Applied
Physics Letters, 2005.
mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a
Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005,
doi:10.1063/1.2001740.
short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
(2005).
date_created: 2019-03-27T10:19:20Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2001740
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron
system
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8685'
article_number: '032502'
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: C.
full_name: Brenner, C.
last_name: Brenner
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from
ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843
apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter,
D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic
contacts in remanence. Applied Physics Letters. https://doi.org/10.1063/1.1996843
bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005,
title={Electron spin injection into GaAs from ferromagnetic contacts in remanence},
DOI={10.1063/1.1996843}, number={032502},
journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner,
C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Westerholt, K.}, year={2005} }'
chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter,
A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection
into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters,
2005. https://doi.org/10.1063/1.1996843.
ieee: N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic
contacts in remanence,” Applied Physics Letters, 2005.
mla: Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic
Contacts in Remanence.” Applied Physics Letters, 032502, 2005, doi:10.1063/1.1996843.
short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D.
Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005).
date_created: 2019-03-27T10:21:16Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1996843
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electron spin injection into GaAs from ferromagnetic contacts in remanence
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8690'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005. doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, DOI={10.1063/1.2112192},
number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan
and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, 163117, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T10:39:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2112192
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8691'
article_number: '232108'
author:
- first_name: Boris
full_name: Grbić, Boris
last_name: Grbić
- first_name: Renaud
full_name: Leturcq, Renaud
last_name: Leturcq
- first_name: Klaus
full_name: Ensslin, Klaus
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in
p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994
apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005).
Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics
Letters. https://doi.org/10.1063/1.2139994
bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor
in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994},
number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq,
Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D.
Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied
Physics Letters, 2005. https://doi.org/10.1063/1.2139994.
ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole
transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters,
2005.
mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.”
Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994.
short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T11:12:28Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2139994
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '29691'
article_number: '152102'
author:
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: D.
full_name: Junk, D.
last_name: Junk
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions
with ion-bombardment-modified exchange bias. Applied Physics Letters. 2005;86(15).
doi:10.1063/1.1899771
apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., &
Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified
exchange bias. Applied Physics Letters, 86(15), Article 152102.
https://doi.org/10.1063/1.1899771
bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing
of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86},
DOI={10.1063/1.1899771}, number={15152102},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink,
V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk,
D. and Ehresmann, A.}, year={2005} }'
chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and
A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters 86, no. 15 (2005). https://doi.org/10.1063/1.1899771.
ieee: 'V. Höink et al., “Postannealing of magnetic tunnel junctions with
ion-bombardment-modified exchange bias,” Applied Physics Letters, vol.
86, no. 15, Art. no. 152102, 2005, doi: 10.1063/1.1899771.'
mla: Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters, vol. 86, no. 15, 152102, AIP Publishing,
2005, doi:10.1063/1.1899771.
short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann,
Applied Physics Letters 86 (2005).
date_created: 2022-01-31T10:21:57Z
date_updated: 2022-01-31T10:22:19Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1899771
extern: '1'
intvolume: ' 86'
issue: '15'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange
bias
type: journal_article
user_id: '26883'
volume: 86
year: '2005'
...
---
_id: '39764'
article_number: '241105'
author:
- first_name: Heinrich
full_name: Matthias, Heinrich
last_name: Matthias
- first_name: Thorsten
full_name: Röder, Thorsten
last_name: Röder
- first_name: Ralf B.
full_name: Wehrspohn, Ralf B.
last_name: Wehrspohn
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Sven
full_name: Matthias, Sven
last_name: Matthias
- first_name: Stephen J.
full_name: Picken, Stephen J.
last_name: Picken
citation:
ama: Matthias H, Röder T, Wehrspohn RB, Kitzerow H-S, Matthias S, Picken SJ. Spatially
periodic liquid crystal director field appearing in a photonic crystal template.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2142100
apa: Matthias, H., Röder, T., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., &
Picken, S. J. (2005). Spatially periodic liquid crystal director field appearing
in a photonic crystal template. Applied Physics Letters, 87(24),
Article 241105. https://doi.org/10.1063/1.2142100
bibtex: '@article{Matthias_Röder_Wehrspohn_Kitzerow_Matthias_Picken_2005, title={Spatially
periodic liquid crystal director field appearing in a photonic crystal template},
volume={87}, DOI={10.1063/1.2142100},
number={24241105}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow,
Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}, year={2005} }'
chicago: Matthias, Heinrich, Thorsten Röder, Ralf B. Wehrspohn, Heinz-Siegfried
Kitzerow, Sven Matthias, and Stephen J. Picken. “Spatially Periodic Liquid Crystal
Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters
87, no. 24 (2005). https://doi.org/10.1063/1.2142100.
ieee: 'H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and
S. J. Picken, “Spatially periodic liquid crystal director field appearing in a
photonic crystal template,” Applied Physics Letters, vol. 87, no. 24, Art.
no. 241105, 2005, doi: 10.1063/1.2142100.'
mla: Matthias, Heinrich, et al. “Spatially Periodic Liquid Crystal Director Field
Appearing in a Photonic Crystal Template.” Applied Physics Letters, vol.
87, no. 24, 241105, AIP Publishing, 2005, doi:10.1063/1.2142100.
short: H. Matthias, T. Röder, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, S.J.
Picken, Applied Physics Letters 87 (2005).
date_created: 2023-01-24T19:10:38Z
date_updated: 2023-01-24T19:11:03Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2142100
intvolume: ' 87'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Spatially periodic liquid crystal director field appearing in a photonic crystal
template
type: journal_article
user_id: '254'
volume: 87
year: '2005'
...
---
_id: '39767'
article_number: '241108'
author:
- first_name: G.
full_name: Mertens, G.
last_name: Mertens
- first_name: R. B.
full_name: Wehrspohn, R. B.
last_name: Wehrspohn
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: S.
full_name: Matthias, S.
last_name: Matthias
- first_name: C.
full_name: Jamois, C.
last_name: Jamois
- first_name: U.
full_name: Gösele, U.
last_name: Gösele
citation:
ama: Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable
defect mode in a three-dimensional photonic crystal. Applied Physics Letters.
2005;87(24). doi:10.1063/1.2139846
apa: Mertens, G., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., Jamois, C., &
Gösele, U. (2005). Tunable defect mode in a three-dimensional photonic crystal.
Applied Physics Letters, 87(24), Article 241108. https://doi.org/10.1063/1.2139846
bibtex: '@article{Mertens_Wehrspohn_Kitzerow_Matthias_Jamois_Gösele_2005, title={Tunable
defect mode in a three-dimensional photonic crystal}, volume={87}, DOI={10.1063/1.2139846},
number={24241108}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias,
S. and Jamois, C. and Gösele, U.}, year={2005} }'
chicago: Mertens, G., R. B. Wehrspohn, Heinz-Siegfried Kitzerow, S. Matthias, C.
Jamois, and U. Gösele. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2139846.
ieee: 'G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and
U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,” Applied
Physics Letters, vol. 87, no. 24, Art. no. 241108, 2005, doi: 10.1063/1.2139846.'
mla: Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.”
Applied Physics Letters, vol. 87, no. 24, 241108, AIP Publishing, 2005,
doi:10.1063/1.2139846.
short: G. Mertens, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, U. Gösele,
Applied Physics Letters 87 (2005).
date_created: 2023-01-24T19:12:37Z
date_updated: 2023-01-24T19:13:14Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2139846
intvolume: ' 87'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tunable defect mode in a three-dimensional photonic crystal
type: journal_article
user_id: '254'
volume: 87
year: '2005'
...
---
_id: '39768'
article_number: '031104'
author:
- first_name: Lutz
full_name: Paelke, Lutz
last_name: Paelke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Peter
full_name: Strohriegl, Peter
last_name: Strohriegl
citation:
ama: Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid
crystal based on a photoconducting polysiloxane. Applied Physics Letters.
2005;86(3). doi:10.1063/1.1852082
apa: Paelke, L., Kitzerow, H.-S., & Strohriegl, P. (2005). Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters,
86(3), Article 031104. https://doi.org/10.1063/1.1852082
bibtex: '@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={10.1063/1.1852082}, number={3031104},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke,
Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }'
chicago: Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive
Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied
Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1852082.
ieee: 'L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane,” Applied Physics Letters,
vol. 86, no. 3, Art. no. 031104, 2005, doi: 10.1063/1.1852082.'
mla: Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based
on a Photoconducting Polysiloxane.” Applied Physics Letters, vol. 86, no.
3, 031104, AIP Publishing, 2005, doi:10.1063/1.1852082.
short: L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T19:13:33Z
date_updated: 2023-01-24T19:13:50Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1852082
intvolume: ' 86'
issue: '3'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane
type: journal_article
user_id: '254'
volume: 86
year: '2005'
...
---
_id: '23507'
abstract:
- lang: eng
text: "A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs
quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination.
The calculations show that, as long as good material quality can be achieved,
growing highly compressively strained samples is preferable due to their specific
band structure properties. Optimum laser operation is possible slightly above
a peak gain of 1000cm−1\r\n."
article_number: '261109'
author:
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: W. W.
full_name: Chow, W. W.
last_name: Chow
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: J. V.
full_name: Moloney, J. V.
last_name: Moloney
citation:
ama: Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of
(GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters.
2005;87(26). doi:10.1063/1.2149371
apa: Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader,
J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures
in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article
261109. https://doi.org/10.1063/1.2149371
bibtex: '@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005,
title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550
nm range}, volume={87}, DOI={10.1063/1.2149371},
number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier,
C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader,
J. and Moloney, J. V.}, year={2005} }'
chicago: Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow,
J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005).
https://doi.org/10.1063/1.2149371.
ieee: 'C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs)
heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol.
87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.'
mla: Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109,
2005, doi:10.1063/1.2149371.
short: C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader,
J.V. Moloney, Applied Physics Letters 87 (2005).
date_created: 2021-08-24T09:29:41Z
date_updated: 2023-04-24T06:00:23Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1063/1.2149371
extern: '1'
intvolume: ' 87'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm
range
type: journal_article
user_id: '49063'
volume: 87
year: '2005'
...
---
_id: '39574'
article_number: '024104'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: J.
full_name: Hu, J.
last_name: Hu
- first_name: J.
full_name: Kanzow, J.
last_name: Kanzow
- first_name: K.
full_name: Rätzke, K.
last_name: Rätzke
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: S.
full_name: Meyer, S.
last_name: Meyer
- first_name: J.
full_name: Pflaum, J.
last_name: Pflaum
citation:
ama: Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive
tool for the detection of metal penetration in molecular-based organic electronics.
Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845
apa: Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann,
C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements
as a sensitive tool for the detection of metal penetration in molecular-based
organic electronics. Applied Physics Letters, 86(2), Article 024104.
https://doi.org/10.1063/1.1849845
bibtex: '@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005,
title={Radiotracer measurements as a sensitive tool for the detection of metal
penetration in molecular-based organic electronics}, volume={86}, DOI={10.1063/1.1849845},
number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R.
and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum,
J.}, year={2005} }'
chicago: Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C.
Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements
as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based
Organic Electronics.” Applied Physics Letters 86, no. 2 (2005). https://doi.org/10.1063/1.1849845.
ieee: 'M. Scharnberg et al., “Radiotracer measurements as a sensitive tool
for the detection of metal penetration in molecular-based organic electronics,”
Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845.'
mla: Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the
Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied
Physics Letters, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:10.1063/1.1849845.
short: M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann,
U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T12:21:59Z
date_updated: 2023-03-22T10:34:05Z
department:
- _id: '59'
doi: 10.1063/1.1849845
intvolume: ' 86'
issue: '2'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Radiotracer measurements as a sensitive tool for the detection of metal penetration
in molecular-based organic electronics
type: journal_article
user_id: '20179'
volume: 86
year: '2005'
...
---
_id: '7678'
author:
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. R.
full_name: Stonas, A. R.
last_name: Stonas
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
citation:
ama: Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN
microdisk lasers fabricated by photoelectrochemical etching. Applied Physics
Letters. 2004;85(22):5179-5181. doi:10.1063/1.1829167
apa: Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars,
S. P., & Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching. Applied Physics Letters,
85(22), 5179–5181. https://doi.org/10.1063/1.1829167
bibtex: '@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing,
optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching}, volume={85}, DOI={10.1063/1.1829167},
number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer,
E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and
DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }'
chicago: 'Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S.
P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters
85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.'
ieee: E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching,” Applied Physics Letters,
vol. 85, no. 22, pp. 5179–5181, 2004.
mla: Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters,
vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167.
short: E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars,
E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181.
date_created: 2019-02-13T14:47:45Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1829167
extern: '1'
intvolume: ' 85'
issue: '22'
language:
- iso: eng
page: 5179-5181
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching
type: journal_article
user_id: '20798'
volume: 85
year: '2004'
...
---
_id: '8696'
author:
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
- first_name: A.
full_name: Yesayan, A.
last_name: Yesayan
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional
p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316
apa: Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly
graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315.
https://doi.org/10.1063/1.1736316
bibtex: '@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded
two-dimensional p–n junction}, DOI={10.1063/1.1736316},
journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter,
Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }'
chicago: Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly
Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15.
https://doi.org/10.1063/1.1736316.
ieee: S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded
two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315,
2004.
mla: Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied
Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316.
short: S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters
(2004) 3313–3315.
date_created: 2019-03-27T11:43:00Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1736316
language:
- iso: eng
page: 3313-3315
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: The linearly graded two-dimensional p–n junction
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '8711'
author:
- first_name: B.
full_name: Grbić, B.
last_name: Grbić
- first_name: C.
full_name: Ellenberger, C.
last_name: Ellenberger
- first_name: T.
full_name: Ihn, T.
last_name: Ihn
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport
in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279.
doi:10.1063/1.1781750
apa: Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck,
A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied
Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750
bibtex: '@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport
in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750},
journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn,
T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279}
}'
chicago: Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck.
“Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters,
2004, 2277–79. https://doi.org/10.1063/1.1781750.
ieee: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck,
“Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters,
pp. 2277–2279, 2004.
mla: Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied
Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750.
short: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied
Physics Letters (2004) 2277–2279.
date_created: 2019-03-27T12:21:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1781750
language:
- iso: eng
page: 2277-2279
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in C-doped AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '23514'
abstract:
- lang: eng
text: A theory is presented which couples a dynamical laser model to a fully microscopic
calculation of scattering effects. Calculations for two optically pumped GaInNAs
laser structures show how this approach can be used to analyze nonequilibrium
and dynamical laser properties over a wide range of system parameters.
author:
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: S.
full_name: Becker, S.
last_name: Becker
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: I.
full_name: Kuznetsova, I.
last_name: Kuznetsova
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: J. V.
full_name: Moloney, J. V.
last_name: Moloney
- first_name: W. W.
full_name: Chow, W. W.
last_name: Chow
citation:
ama: Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically
pumped GaInNAs laser structures. Applied Physics Letters. 2004;85(23):5526-5528.
doi:10.1063/1.1831570
apa: Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T.,
Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2004). Nonequilibrium
gain in optically pumped GaInNAs laser structures. Applied Physics Letters,
85(23), 5526–5528. https://doi.org/10.1063/1.1831570
bibtex: '@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004,
title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85},
DOI={10.1063/1.1831570}, number={23},
journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier,
C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney,
J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }'
chicago: 'Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier,
S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically
Pumped GaInNAs Laser Structures.” Applied Physics Letters 85, no. 23 (2004):
5526–28. https://doi.org/10.1063/1.1831570.'
ieee: 'A. Thränhardt et al., “Nonequilibrium gain in optically pumped GaInNAs
laser structures,” Applied Physics Letters, vol. 85, no. 23, pp. 5526–5528,
2004, doi: 10.1063/1.1831570.'
mla: Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser
Structures.” Applied Physics Letters, vol. 85, no. 23, 2004, pp. 5526–28,
doi:10.1063/1.1831570.
short: A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W.
Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528.
date_created: 2021-08-24T09:46:22Z
date_updated: 2023-04-24T06:23:26Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1063/1.1831570
extern: '1'
intvolume: ' 85'
issue: '23'
language:
- iso: eng
page: 5526-5528
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Nonequilibrium gain in optically pumped GaInNAs laser structures
type: journal_article
user_id: '49063'
volume: 85
year: '2004'
...
---
_id: '7683'
author:
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: C.
full_name: Riedesel, C.
last_name: Riedesel
- first_name: P.
full_name: Schafmeister, P.
last_name: Schafmeister
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality
two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs.
Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925
apa: Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003).
Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925
bibtex: '@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication
of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925},
number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter,
D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.},
year={2003}, pages={481–483} }'
chicago: 'Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck.
“Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped
AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.'
ieee: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication
of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs,” Applied Physics Letters, vol. 82, no. 3, pp. 481–483, 2003.
mla: Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases
by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters,
vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925.
short: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics
Letters 82 (2003) 481–483.
date_created: 2019-02-13T14:51:34Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1539925
extern: '1'
intvolume: ' 82'
issue: '3'
language:
- iso: eng
page: 481-483
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of high-quality two-dimensional electron gases by overgrowth of
focused-ion-beam-doped AlxGa1−xAs
type: journal_article
user_id: '20798'
volume: 82
year: '2003'
...
---
_id: '8723'
author:
- first_name: B. Roldan
full_name: Cuenya, B. Roldan
last_name: Cuenya
- first_name: M.
full_name: Doi, M.
last_name: Doi
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: S.
full_name: Hoch, S.
last_name: Hoch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: T.
full_name: Schmitte, T.
last_name: Schmitte
- first_name: H.
full_name: Zabel, H.
last_name: Zabel
citation:
ama: Cuenya BR, Doi M, Keune W, et al. Magnetism and interface properties of epitaxial
Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas
heterostructures. Applied Physics Letters. 2003:1072-1074. doi:10.1063/1.1542934
apa: Cuenya, B. R., Doi, M., Keune, W., Hoch, S., Reuter, D., Wieck, A., … Zabel,
H. (2003). Magnetism and interface properties of epitaxial Fe films on high-mobility
GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied
Physics Letters, 1072–1074. https://doi.org/10.1063/1.1542934
bibtex: '@article{Cuenya_Doi_Keune_Hoch_Reuter_Wieck_Schmitte_Zabel_2003, title={Magnetism
and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001)
two-dimensional electron gas heterostructures}, DOI={10.1063/1.1542934},
journal={Applied Physics Letters}, author={Cuenya, B. Roldan and Doi, M. and Keune,
W. and Hoch, S. and Reuter, Dirk and Wieck, A. and Schmitte, T. and Zabel, H.},
year={2003}, pages={1072–1074} }'
chicago: Cuenya, B. Roldan, M. Doi, W. Keune, S. Hoch, Dirk Reuter, A. Wieck, T.
Schmitte, and H. Zabel. “Magnetism and Interface Properties of Epitaxial Fe Films
on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.”
Applied Physics Letters, 2003, 1072–74. https://doi.org/10.1063/1.1542934.
ieee: B. R. Cuenya et al., “Magnetism and interface properties of epitaxial
Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas
heterostructures,” Applied Physics Letters, pp. 1072–1074, 2003.
mla: Cuenya, B. Roldan, et al. “Magnetism and Interface Properties of Epitaxial
Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas
Heterostructures.” Applied Physics Letters, 2003, pp. 1072–74, doi:10.1063/1.1542934.
short: B.R. Cuenya, M. Doi, W. Keune, S. Hoch, D. Reuter, A. Wieck, T. Schmitte,
H. Zabel, Applied Physics Letters (2003) 1072–1074.
date_created: 2019-03-28T14:59:02Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1542934
language:
- iso: eng
page: 1072-1074
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001)
two-dimensional electron gas heterostructures
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '4288'
abstract:
- lang: eng
text: "We report the experimental observation and the theoretical modeling of self-induced-transparency\r\nsignatures
such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond
pulse\r\npropagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance
with the excitonic\r\nground-state transition at 10 K. The measurements were obtained
by using a cross-correlation\r\nfrequency-resolved optical gating technique which
allows us to retrieve the field amplitude of the\r\npropagating pulses."
article_type: original
author:
- first_name: S.
full_name: Schneider, S.
last_name: Schneider
- first_name: P.
full_name: Borri, P.
last_name: Borri
- first_name: W.
full_name: Langbein, W.
last_name: Langbein
- first_name: U.
full_name: Woggon, U.
last_name: Woggon
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: A.
full_name: Knorr, A.
last_name: Knorr
- first_name: R. L.
full_name: Sellin, R. L.
last_name: Sellin
- first_name: D.
full_name: Ouyang, D.
last_name: Ouyang
- first_name: D.
full_name: Bimberg, D.
last_name: Bimberg
citation:
ama: Schneider S, Borri P, Langbein W, et al. Self-induced transparency in InGaAs
quantum-dot waveguides. Applied Physics Letters. 2003;83(18):3668-3670.
doi:10.1063/1.1624492
apa: Schneider, S., Borri, P., Langbein, W., Woggon, U., Förstner, J., Knorr, A.,
… Bimberg, D. (2003). Self-induced transparency in InGaAs quantum-dot waveguides.
Applied Physics Letters, 83(18), 3668–3670. https://doi.org/10.1063/1.1624492
bibtex: '@article{Schneider_Borri_Langbein_Woggon_Förstner_Knorr_Sellin_Ouyang_Bimberg_2003,
title={Self-induced transparency in InGaAs quantum-dot waveguides}, volume={83},
DOI={10.1063/1.1624492}, number={18},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schneider,
S. and Borri, P. and Langbein, W. and Woggon, U. and Förstner, Jens and Knorr,
A. and Sellin, R. L. and Ouyang, D. and Bimberg, D.}, year={2003}, pages={3668–3670}
}'
chicago: 'Schneider, S., P. Borri, W. Langbein, U. Woggon, Jens Förstner, A. Knorr,
R. L. Sellin, D. Ouyang, and D. Bimberg. “Self-Induced Transparency in InGaAs
Quantum-Dot Waveguides.” Applied Physics Letters 83, no. 18 (2003): 3668–70.
https://doi.org/10.1063/1.1624492.'
ieee: S. Schneider et al., “Self-induced transparency in InGaAs quantum-dot
waveguides,” Applied Physics Letters, vol. 83, no. 18, pp. 3668–3670, 2003.
mla: Schneider, S., et al. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.”
Applied Physics Letters, vol. 83, no. 18, AIP Publishing, 2003, pp. 3668–70,
doi:10.1063/1.1624492.
short: S. Schneider, P. Borri, W. Langbein, U. Woggon, J. Förstner, A. Knorr, R.L.
Sellin, D. Ouyang, D. Bimberg, Applied Physics Letters 83 (2003) 3668–3670.
date_created: 2018-08-30T07:41:02Z
date_updated: 2022-01-06T07:00:48Z
ddc:
- '530'
doi: 10.1063/1.1624492
extern: '1'
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-30T07:41:50Z
date_updated: 2018-09-05T06:50:15Z
file_id: '4289'
file_name: 2003 Schneider et al_Self-induced transparency in InGaAs quantum-dot
waveguides.pdf
file_size: 55291
relation: main_file
file_date_updated: 2018-09-05T06:50:15Z
has_accepted_license: '1'
intvolume: ' 83'
issue: '18'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
page: 3668-3670
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Self-induced transparency in InGaAs quantum-dot waveguides
type: journal_article
urn: '42888'
user_id: '158'
volume: 83
year: '2003'
...
---
_id: '39776'
author:
- first_name: Guido
full_name: Mertens, Guido
last_name: Mertens
- first_name: Thorsten
full_name: Röder, Thorsten
last_name: Röder
- first_name: Heinrich
full_name: Matthias, Heinrich
last_name: Matthias
- first_name: Heinrich
full_name: Marsmann, Heinrich
last_name: Marsmann
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Stefan L.
full_name: Schweizer, Stefan L.
last_name: Schweizer
- first_name: Cecile
full_name: Jamois, Cecile
last_name: Jamois
- first_name: Ralf B.
full_name: Wehrspohn, Ralf B.
last_name: Wehrspohn
- first_name: Mary
full_name: Neubert, Mary
last_name: Neubert
citation:
ama: Mertens G, Röder T, Matthias H, et al. Two- and three-dimensional photonic
crystals made of macroporous silicon and liquid crystals. Applied Physics Letters.
2003;83(15):3036-3038. doi:10.1063/1.1614000
apa: Mertens, G., Röder, T., Matthias, H., Marsmann, H., Kitzerow, H.-S., Schweizer,
S. L., Jamois, C., Wehrspohn, R. B., & Neubert, M. (2003). Two- and three-dimensional
photonic crystals made of macroporous silicon and liquid crystals. Applied
Physics Letters, 83(15), 3036–3038. https://doi.org/10.1063/1.1614000
bibtex: '@article{Mertens_Röder_Matthias_Marsmann_Kitzerow_Schweizer_Jamois_Wehrspohn_Neubert_2003,
title={Two- and three-dimensional photonic crystals made of macroporous silicon
and liquid crystals}, volume={83}, DOI={10.1063/1.1614000},
number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens,
Guido and Röder, Thorsten and Matthias, Heinrich and Marsmann, Heinrich and Kitzerow,
Heinz-Siegfried and Schweizer, Stefan L. and Jamois, Cecile and Wehrspohn, Ralf
B. and Neubert, Mary}, year={2003}, pages={3036–3038} }'
chicago: 'Mertens, Guido, Thorsten Röder, Heinrich Matthias, Heinrich Marsmann,
Heinz-Siegfried Kitzerow, Stefan L. Schweizer, Cecile Jamois, Ralf B. Wehrspohn,
and Mary Neubert. “Two- and Three-Dimensional Photonic Crystals Made of Macroporous
Silicon and Liquid Crystals.” Applied Physics Letters 83, no. 15 (2003):
3036–38. https://doi.org/10.1063/1.1614000.'
ieee: 'G. Mertens et al., “Two- and three-dimensional photonic crystals made
of macroporous silicon and liquid crystals,” Applied Physics Letters, vol.
83, no. 15, pp. 3036–3038, 2003, doi: 10.1063/1.1614000.'
mla: Mertens, Guido, et al. “Two- and Three-Dimensional Photonic Crystals Made of
Macroporous Silicon and Liquid Crystals.” Applied Physics Letters, vol.
83, no. 15, AIP Publishing, 2003, pp. 3036–38, doi:10.1063/1.1614000.
short: G. Mertens, T. Röder, H. Matthias, H. Marsmann, H.-S. Kitzerow, S.L. Schweizer,
C. Jamois, R.B. Wehrspohn, M. Neubert, Applied Physics Letters 83 (2003) 3036–3038.
date_created: 2023-01-24T19:19:36Z
date_updated: 2023-01-24T19:20:20Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1614000
intvolume: ' 83'
issue: '15'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
page: 3036-3038
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Two- and three-dimensional photonic crystals made of macroporous silicon and
liquid crystals
type: journal_article
user_id: '254'
volume: 83
year: '2003'
...
---
_id: '1745'
author:
- first_name: T.
full_name: Pertsch, T.
last_name: Pertsch
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: U.
full_name: Peschel, U.
last_name: Peschel
- first_name: A.
full_name: Bräuer, A.
last_name: Bräuer
- first_name: F.
full_name: Lederer, F.
last_name: Lederer
citation:
ama: Pertsch T, Zentgraf T, Peschel U, Bräuer A, Lederer F. Beam steering in waveguide
arrays. Applied Physics Letters. 2002;80(18):3247-3249. doi:10.1063/1.1476720
apa: Pertsch, T., Zentgraf, T., Peschel, U., Bräuer, A., & Lederer, F. (2002).
Beam steering in waveguide arrays. Applied Physics Letters, 80(18),
3247–3249. https://doi.org/10.1063/1.1476720
bibtex: '@article{Pertsch_Zentgraf_Peschel_Bräuer_Lederer_2002, title={Beam steering
in waveguide arrays}, volume={80}, DOI={10.1063/1.1476720},
number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pertsch,
T. and Zentgraf, Thomas and Peschel, U. and Bräuer, A. and Lederer, F.}, year={2002},
pages={3247–3249} }'
chicago: 'Pertsch, T., Thomas Zentgraf, U. Peschel, A. Bräuer, and F. Lederer. “Beam
Steering in Waveguide Arrays.” Applied Physics Letters 80, no. 18 (2002):
3247–49. https://doi.org/10.1063/1.1476720.'
ieee: T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, and F. Lederer, “Beam steering
in waveguide arrays,” Applied Physics Letters, vol. 80, no. 18, pp. 3247–3249,
2002.
mla: Pertsch, T., et al. “Beam Steering in Waveguide Arrays.” Applied Physics
Letters, vol. 80, no. 18, AIP Publishing, 2002, pp. 3247–49, doi:10.1063/1.1476720.
short: T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, F. Lederer, Applied Physics
Letters 80 (2002) 3247–3249.
date_created: 2018-03-23T12:54:43Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1476720
intvolume: ' 80'
issue: '18'
page: 3247-3249
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Beam steering in waveguide arrays
type: journal_article
user_id: '30525'
volume: 80
year: '2002'
...
---
_id: '8731'
author:
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: G.
full_name: Apetrii, G.
last_name: Apetrii
- first_name: S.
full_name: Skaberna, S.
last_name: Skaberna
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Fischer SF, Apetrii G, Skaberna S, Kunze U, Reuter D, Wieck AD. Control of
the confining potential in ballistic constrictions using a persistent charging
effect. Applied Physics Letters. 2002:2779-2781. doi:10.1063/1.1511278
apa: Fischer, S. F., Apetrii, G., Skaberna, S., Kunze, U., Reuter, D., & Wieck,
A. D. (2002). Control of the confining potential in ballistic constrictions using
a persistent charging effect. Applied Physics Letters, 2779–2781. https://doi.org/10.1063/1.1511278
bibtex: '@article{Fischer_Apetrii_Skaberna_Kunze_Reuter_Wieck_2002, title={Control
of the confining potential in ballistic constrictions using a persistent charging
effect}, DOI={10.1063/1.1511278},
journal={Applied Physics Letters}, author={Fischer, S. F. and Apetrii, G. and
Skaberna, S. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2779–2781}
}'
chicago: Fischer, S. F., G. Apetrii, S. Skaberna, U. Kunze, Dirk Reuter, and A.
D. Wieck. “Control of the Confining Potential in Ballistic Constrictions Using
a Persistent Charging Effect.” Applied Physics Letters, 2002, 2779–81.
https://doi.org/10.1063/1.1511278.
ieee: S. F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, and A. D. Wieck,
“Control of the confining potential in ballistic constrictions using a persistent
charging effect,” Applied Physics Letters, pp. 2779–2781, 2002.
mla: Fischer, S. F., et al. “Control of the Confining Potential in Ballistic Constrictions
Using a Persistent Charging Effect.” Applied Physics Letters, 2002, pp.
2779–81, doi:10.1063/1.1511278.
short: S.F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, A.D. Wieck, Applied
Physics Letters (2002) 2779–2781.
date_created: 2019-03-28T15:08:27Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1511278
language:
- iso: eng
page: 2779-2781
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Control of the confining potential in ballistic constrictions using a persistent
charging effect
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8736'
author:
- first_name: J.
full_name: Regul, J.
last_name: Regul
- first_name: U. F.
full_name: Keyser, U. F.
last_name: Keyser
- first_name: M.
full_name: Paesler, M.
last_name: Paesler
- first_name: F.
full_name: Hohls, F.
last_name: Hohls
- first_name: U.
full_name: Zeitler, U.
last_name: Zeitler
- first_name: R. J.
full_name: Haug, R. J.
last_name: Haug
- first_name: A.
full_name: Malavé, A.
last_name: Malavé
- first_name: E.
full_name: Oesterschulze, E.
last_name: Oesterschulze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Regul J, Keyser UF, Paesler M, et al. Fabrication of quantum point contacts
by engraving GaAs/AlGaAs heterostructures with a diamond tip. Applied Physics
Letters. 2002:2023-2025. doi:10.1063/1.1506417
apa: Regul, J., Keyser, U. F., Paesler, M., Hohls, F., Zeitler, U., Haug, R. J.,
… Wieck, A. D. (2002). Fabrication of quantum point contacts by engraving GaAs/AlGaAs
heterostructures with a diamond tip. Applied Physics Letters, 2023–2025.
https://doi.org/10.1063/1.1506417
bibtex: '@article{Regul_Keyser_Paesler_Hohls_Zeitler_Haug_Malavé_Oesterschulze_Reuter_Wieck_2002,
title={Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures
with a diamond tip}, DOI={10.1063/1.1506417},
journal={Applied Physics Letters}, author={Regul, J. and Keyser, U. F. and Paesler,
M. and Hohls, F. and Zeitler, U. and Haug, R. J. and Malavé, A. and Oesterschulze,
E. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2023–2025} }'
chicago: Regul, J., U. F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R. J. Haug,
A. Malavé, E. Oesterschulze, Dirk Reuter, and A. D. Wieck. “Fabrication of Quantum
Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.”
Applied Physics Letters, 2002, 2023–25. https://doi.org/10.1063/1.1506417.
ieee: J. Regul et al., “Fabrication of quantum point contacts by engraving
GaAs/AlGaAs heterostructures with a diamond tip,” Applied Physics Letters,
pp. 2023–2025, 2002.
mla: Regul, J., et al. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs
Heterostructures with a Diamond Tip.” Applied Physics Letters, 2002, pp.
2023–25, doi:10.1063/1.1506417.
short: J. Regul, U.F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R.J. Haug, A. Malavé,
E. Oesterschulze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2023–2025.
date_created: 2019-03-28T15:13:44Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1506417
language:
- iso: eng
page: 2023-2025
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures
with a diamond tip
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8740'
author:
- first_name: M. R.
full_name: Schaapman, M. R.
last_name: Schaapman
- first_name: P. C. M.
full_name: Christianen, P. C. M.
last_name: Christianen
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose
torsional magnetometer with optical detection. Applied Physics Letters.
2002:1041-1043. doi:10.1063/1.1498152
apa: Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., & Wieck,
A. D. (2002). A multipurpose torsional magnetometer with optical detection. Applied
Physics Letters, 1041–1043. https://doi.org/10.1063/1.1498152
bibtex: '@article{Schaapman_Christianen_Maan_Reuter_Wieck_2002, title={A multipurpose
torsional magnetometer with optical detection}, DOI={10.1063/1.1498152},
journal={Applied Physics Letters}, author={Schaapman, M. R. and Christianen, P.
C. M. and Maan, J. C. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={1041–1043}
}'
chicago: Schaapman, M. R., P. C. M. Christianen, J. C. Maan, Dirk Reuter, and A.
D. Wieck. “A Multipurpose Torsional Magnetometer with Optical Detection.” Applied
Physics Letters, 2002, 1041–43. https://doi.org/10.1063/1.1498152.
ieee: M. R. Schaapman, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck,
“A multipurpose torsional magnetometer with optical detection,” Applied Physics
Letters, pp. 1041–1043, 2002.
mla: Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical
Detection.” Applied Physics Letters, 2002, pp. 1041–43, doi:10.1063/1.1498152.
short: M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied
Physics Letters (2002) 1041–1043.
date_created: 2019-03-28T15:17:30Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1498152
language:
- iso: eng
page: 1041-1043
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: A multipurpose torsional magnetometer with optical detection
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8746'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Meier, C.
last_name: Meier
- first_name: M. A. Serrano
full_name: Álvarez, M. A. Serrano
last_name: Álvarez
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively
doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics
Letters. 2002:377-379. doi:10.1063/1.1386618
apa: Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2002). Increased
thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices.
Applied Physics Letters, 377–379. https://doi.org/10.1063/1.1386618
bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget
for selectively doped heterostructures by employing AlAs/GaAs superlattices},
DOI={10.1063/1.1386618}, journal={Applied
Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano
and Wieck, A. D.}, year={2002}, pages={377–379} }'
chicago: Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased
Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.”
Applied Physics Letters, 2002, 377–79. https://doi.org/10.1063/1.1386618.
ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal
budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,”
Applied Physics Letters, pp. 377–379, 2002.
mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures
by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, 2002, pp.
377–79, doi:10.1063/1.1386618.
short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters
(2002) 377–379.
date_created: 2019-03-29T11:23:32Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1386618
language:
- iso: eng
page: 377-379
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Increased thermal budget for selectively doped heterostructures by employing
AlAs/GaAs superlattices
type: journal_article
user_id: '42514'
year: '2002'
...