--- _id: '8585' article_number: '022113' author: - first_name: B. full_name: Marquardt, B. last_name: Marquardt - first_name: M. full_name: Geller, M. last_name: Geller - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724 apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.3175724 bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={10.1063/1.3175724}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3175724. ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” Applied Physics Letters, 2009. mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 022113, 2009, doi:10.1063/1.3175724. short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:55:40Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3175724 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots type: journal_article user_id: '42514' year: '2009' ... --- _id: '7640' article_number: '193111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: M. full_name: Offer, M. last_name: Offer - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: O. full_name: Wibbelhoff, O. last_name: Wibbelhoff - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439 apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439 bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }' chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439. ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008. mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439. short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008). date_created: 2019-02-13T11:30:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2920439 extern: '1' intvolume: ' 92' issue: '19' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy type: journal_article user_id: '20798' volume: 92 year: '2008' ... --- _id: '8603' article_number: '112111' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Y. full_name: Cordier, Y. last_name: Cordier - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968 bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968. ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008. mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968. short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:26:36Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2899968 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures type: journal_article user_id: '42514' year: '2008' ... --- _id: '8607' article_number: '241920' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: J. full_name: Nannen, J. last_name: Nannen - first_name: S. full_name: Halm, S. last_name: Halm - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: M. full_name: Wahle, M. last_name: Wahle - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279 apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279 bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008, title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}, DOI={10.1063/1.2943279}, number={241920}, journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2008} }' chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279. ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature,” Applied Physics Letters, 2008. mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279. short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:51:24Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2943279 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature type: journal_article user_id: '42514' year: '2008' ... --- _id: '8608' article_number: '242102' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: H. full_name: Wende, H. last_name: Wende - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2948856 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A. D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et al._2008, title={Electrical detection of photoinduced spins both at room temperature and in remanence}, DOI={10.1063/1.2948856}, number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856. ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at room temperature and in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:52:27Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2948856 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Electrical detection of photoinduced spins both at room temperature and in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '8609' article_number: '021117' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: H. full_name: Wende, H. last_name: Wende - first_name: W. full_name: Keune, W. last_name: Keune - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2957469 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469. ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:53:44Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2957469 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Room temperature electrical spin injection in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '39749' article_number: '131903' author: - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: S. A. full_name: Benning, S. A. last_name: Benning - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters. 2008;93(13). doi:10.1063/1.2990762 apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762 bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}, volume={93}, DOI={10.1063/1.2990762}, number={13131903}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762. ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns fixed by photopolymerization of dissipative structures,” Applied Physics Letters, vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.' mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903, AIP Publishing, 2008, doi:10.1063/1.2990762. short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:52:43Z date_updated: 2023-01-24T18:53:04Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2990762 intvolume: ' 93' issue: '13' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Submicrometer periodic patterns fixed by photopolymerization of dissipative structures type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '39751' article_number: '183304' author: - first_name: Andreas full_name: Redler, Andreas last_name: Redler - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18). doi:10.1063/1.3021364 apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters, 93(18), Article 183304. https://doi.org/10.1063/1.3021364 bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364}, number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364. ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal,” Applied Physics Letters, vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.' mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364. short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:53:20Z date_updated: 2023-01-24T18:53:34Z department: - _id: '313' - _id: '638' doi: 10.1063/1.3021364 intvolume: ' 93' issue: '18' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '26076' article_number: '151109' author: - first_name: Xiao-Feng full_name: Han, Xiao-Feng last_name: Han - first_name: Yu-Xiang full_name: Weng, Yu-Xiang last_name: Weng - first_name: Rui full_name: Wang, Rui last_name: Wang - first_name: Xi-Hao full_name: Chen, Xi-Hao last_name: Chen - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu - first_name: Jimin full_name: Zhao, Jimin last_name: Zhao citation: ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540 apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., & Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540 bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level ultrafast all-optical switching}, DOI={10.1063/1.2909540}, number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}, year={2008} }' chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2909540. ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,” Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.' mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540. short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao, Applied Physics Letters (2008). date_created: 2021-10-12T08:46:00Z date_updated: 2023-01-26T10:08:30Z doi: 10.1063/1.2909540 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-photon level ultrafast all-optical switching type: journal_article user_id: '36389' year: '2008' ... --- _id: '1761' article_number: '151109' author: - first_name: Carsten full_name: Rockstuhl, Carsten last_name: Rockstuhl - first_name: Falk full_name: Lederer, Falk last_name: Lederer - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Harald full_name: Giessen, Harald last_name: Giessen citation: ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters. 2007;91(15). doi:10.1063/1.2799240 apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters, 91(15). https://doi.org/10.1063/1.2799240 bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }' chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240. ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics Letters, vol. 91, no. 15, 2007. mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no. 15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240. short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters 91 (2007). date_created: 2018-03-23T13:07:38Z date_updated: 2022-01-06T06:53:16Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2799240 intvolume: ' 91' issue: '15' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays type: journal_article user_id: '30525' volume: 91 year: '2007' ... --- _id: '7644' article_number: '143113' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy citation: ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612 apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612 bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612}, number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }' chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14 (2007). https://doi.org/10.1063/1.2719612. ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007. mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113, AIP Publishing, 2007, doi:10.1063/1.2719612. short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007). date_created: 2019-02-13T11:34:33Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2719612 extern: '1' intvolume: ' 90' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Technique for tilting GaAs photonic crystal nanocavities out of plane type: journal_article user_id: '20798' volume: 90 year: '2007' ... --- _id: '8630' article_number: '262505' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: V. full_name: Ney, V. last_name: Ney - first_name: T. full_name: Kammermeier, T. last_name: Kammermeier - first_name: A. full_name: Ney, A. last_name: Ney - first_name: J. full_name: Schörmann, J. last_name: Schörmann - first_name: S. full_name: Potthast, S. last_name: Potthast - first_name: D. J. full_name: As, D. J. last_name: As - first_name: K. full_name: Lischka, K. last_name: Lischka citation: ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T., … Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113 bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende GaN}, DOI={10.1063/1.2753113}, number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney, A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier, A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113. ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted zinc-blende GaN,” Applied Physics Letters, 2007. mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113. short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A. Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007). date_created: 2019-03-26T10:23:42Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2753113 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetic and structural properties of Gd-implanted zinc-blende GaN type: journal_article user_id: '42514' year: '2007' ... --- _id: '8632' article_number: '123108' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: A. full_name: Remhof, A. last_name: Remhof citation: ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. 2007. doi:10.1063/1.2786836 apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007). Focused ion beam implantation induced site-selective growth of InAs quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.2786836 bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836}, number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter, Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }' chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2786836. ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion beam implantation induced site-selective growth of InAs quantum dots,” Applied Physics Letters, 2007. mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836. short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics Letters (2007). date_created: 2019-03-26T10:26:08Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2786836 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Focused ion beam implantation induced site-selective growth of InAs quantum dots type: journal_article user_id: '42514' year: '2007' ... --- _id: '25986' abstract: - lang: eng text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically ordered, uniform pore system with crystalline pore walls. The crystalline structure is investigated by x-ray diffraction, transmission electron microscopy, and selected area electron diffraction. The large specific surface area and the uniformity of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy along with low-temperature photoluminescence measurements confirms the high degree of crystallinity and gives insight into defects participating in the radiative recombination processes.\r\nThe authors thank Günter Koch for recording the TEM images and Marie-Luise Wolff for valuable help in the laboratory one of the authors (M.T.) thanks Michael Fröba for the continuous support." article_number: '123108' article_type: original author: - first_name: T. full_name: Waitz, T. last_name: Waitz - first_name: Michael full_name: Tiemann, Michael id: '23547' last_name: Tiemann orcid: 0000-0003-1711-2722 - first_name: P. J. full_name: Klar, P. J. last_name: Klar - first_name: J. full_name: Sann, J. last_name: Sann - first_name: J. full_name: Stehr, J. last_name: Stehr - first_name: B. K. full_name: Meyer, B. K. last_name: Meyer citation: ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters. Published online 2007. doi:10.1063/1.2713872 apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K. (2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting. Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872 bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872}, number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann, Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007} }' chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2713872. ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.' mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872. short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics Letters (2007). date_created: 2021-10-09T09:40:39Z date_updated: 2023-03-09T08:49:01Z department: - _id: '35' - _id: '2' - _id: '307' doi: 10.1063/1.2713872 extern: '1' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published quality_controlled: '1' status: public title: Crystalline ZnO with an enhanced surface area obtained by nanocasting type: journal_article user_id: '23547' year: '2007' ... --- _id: '39561' article_number: '013501' author: - first_name: M. full_name: Scharnberg, M. last_name: Scharnberg - first_name: V. full_name: Zaporojtchenko, V. last_name: Zaporojtchenko - first_name: R. full_name: Adelung, R. last_name: Adelung - first_name: F. full_name: Faupel, F. last_name: Faupel - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: T. full_name: Diekmann, T. last_name: Diekmann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann citation: ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters. 2007;90(1). doi:10.1063/1.2426926 apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C., Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer. Applied Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926 bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007, title={Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926}, number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }' chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926. ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer,” Applied Physics Letters, vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.' mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics Letters, vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926. short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T. Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007). date_created: 2023-01-24T12:15:22Z date_updated: 2023-03-21T10:15:06Z department: - _id: '59' doi: 10.1063/1.2426926 intvolume: ' 90' issue: '1' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer type: journal_article user_id: '20179' volume: 90 year: '2007' ... --- _id: '7651' article_number: '031111' author: - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Kevin full_name: Hennessy, Kevin last_name: Hennessy - first_name: Elaine D. full_name: Haberer, Elaine D. last_name: Haberer - first_name: Rajat full_name: Sharma, Rajat last_name: Sharma - first_name: Yong-Seok full_name: Choi, Yong-Seok last_name: Choi - first_name: Kelly full_name: McGroddy, Kelly last_name: McGroddy - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: Evelyn L. full_name: Hu, Evelyn L. last_name: Hu citation: ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3). doi:10.1063/1.2166680 apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy, K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680 bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006, title={Visible resonant modes in GaN-based photonic crystal membrane cavities}, volume={88}, DOI={10.1063/1.2166680}, number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }' chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680. ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006. mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP Publishing, 2006, doi:10.1063/1.2166680. short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy, S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006). date_created: 2019-02-13T11:41:17Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2166680 extern: '1' intvolume: ' 88' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Visible resonant modes in GaN-based photonic crystal membrane cavities type: journal_article user_id: '20798' volume: 88 year: '2006' ... --- _id: '8648' article_number: '082110' author: - first_name: M. full_name: Knop, M. last_name: Knop - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618 apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters. https://doi.org/10.1063/1.2179618 bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618}, number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2179618. ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006. mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618. short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T07:54:36Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2179618 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ballistic rectification in an asymmetric mesoscopic cross junction type: journal_article user_id: '42514' year: '2006' ... --- _id: '8654' article_number: '121115' author: - first_name: R. full_name: Schmidt, R. last_name: Schmidt - first_name: U. full_name: Scholz, U. last_name: Scholz - first_name: M. full_name: Vitzethum, M. last_name: Vitzethum - first_name: R. full_name: Fix, R. last_name: Fix - first_name: C. full_name: Metzner, C. last_name: Metzner - first_name: P. full_name: Kailuweit, P. last_name: Kailuweit - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. full_name: Wieck, A. last_name: Wieck - first_name: M. C. full_name: Hübner, M. C. last_name: Hübner - first_name: S. full_name: Stufler, S. last_name: Stufler - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: S. full_name: Malzer, S. last_name: Malzer - first_name: G. H. full_name: Döhler, G. H. last_name: Döhler citation: ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057 apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., … Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057 bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes}, DOI={10.1063/1.2188057}, number={121115}, journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }' chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057. ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting diodes,” Applied Physics Letters, 2006. mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057. short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler, Applied Physics Letters (2006). date_created: 2019-03-27T08:21:39Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2188057 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Fabrication of genuine single-quantum-dot light-emitting diodes type: journal_article user_id: '42514' year: '2006' ... --- _id: '8665' article_number: '123105' author: - first_name: V. full_name: Stavarache, V. last_name: Stavarache - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: M. full_name: Schwab, M. last_name: Schwab - first_name: D. R. full_name: Yakovlev, D. R. last_name: Yakovlev - first_name: R. full_name: Oulton, R. last_name: Oulton - first_name: M. full_name: Bayer, M. last_name: Bayer citation: ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233 apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton, R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233 bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233}, number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R. and Bayer, M.}, year={2006} }' chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R. Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233. ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric fields,” Applied Physics Letters, 2006. mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233. short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton, M. Bayer, Applied Physics Letters (2006). date_created: 2019-03-27T08:39:57Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2345233 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Control of quantum dot excitons by lateral electric fields type: journal_article user_id: '42514' year: '2006' ... --- _id: '8671' article_number: '231101' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909 apa: Hohage, P. E., Bacher, G., Reuter, D., & Wieck, A. D. (2006). Coherent spin oscillations in bulk GaAs at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2398909 bibtex: '@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations in bulk GaAs at room temperature}, DOI={10.1063/1.2398909}, number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }' chicago: Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2398909. ieee: P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations in bulk GaAs at room temperature,” Applied Physics Letters, 2006. mla: Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters, 231101, 2006, doi:10.1063/1.2398909. short: P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006). date_created: 2019-03-27T09:15:03Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2398909 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin oscillations in bulk GaAs at room temperature type: journal_article user_id: '42514' year: '2006' ...