---
_id: '29684'
article_number: '012502'
author:
- first_name: Andy
full_name: Thomas, Andy
last_name: Thomas
- first_name: Dirk
full_name: Meyners, Dirk
last_name: Meyners
- first_name: Daniel
full_name: Ebke, Daniel
last_name: Ebke
- first_name: Ning-Ning
full_name: Liu, Ning-Ning
last_name: Liu
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: Jan
full_name: Schmalhorst, Jan
last_name: Schmalhorst
- first_name: Günter
full_name: Reiss, Günter
last_name: Reiss
- first_name: Hubert
full_name: Ebert, Hubert
last_name: Ebert
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
citation:
ama: Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys
for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333
apa: Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J.,
Reiss, G., Ebert, H., & Hütten, A. (2006). Inverted spin polarization of Heusler
alloys for spintronic devices. Applied Physics Letters, 89(1), Article
012502. https://doi.org/10.1063/1.2219333
bibtex: '@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006,
title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89},
DOI={10.1063/1.2219333}, number={1012502},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas,
Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and
Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006}
}'
chicago: Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan
Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization
of Heusler Alloys for Spintronic Devices.” Applied Physics Letters 89,
no. 1 (2006). https://doi.org/10.1063/1.2219333.
ieee: 'A. Thomas et al., “Inverted spin polarization of Heusler alloys for
spintronic devices,” Applied Physics Letters, vol. 89, no. 1, Art. no.
012502, 2006, doi: 10.1063/1.2219333.'
mla: Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic
Devices.” Applied Physics Letters, vol. 89, no. 1, 012502, AIP Publishing,
2006, doi:10.1063/1.2219333.
short: A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G.
Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006).
date_created: 2022-01-31T10:16:33Z
date_updated: 2022-01-31T10:16:56Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2219333
extern: '1'
intvolume: ' 89'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Inverted spin polarization of Heusler alloys for spintronic devices
type: journal_article
user_id: '26883'
volume: 89
year: '2006'
...
---
_id: '7653'
article_number: '243101'
author:
- first_name: Y.-S.
full_name: Choi, Y.-S.
last_name: Choi
- first_name: K.
full_name: Hennessy, K.
last_name: Hennessy
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E.
full_name: Haberer, E.
last_name: Haberer
- first_name: Y.
full_name: Gao, Y.
last_name: Gao
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713
apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P.,
… Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied
Physics Letters, 87(24). https://doi.org/10.1063/1.2147713
bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005,
title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S.
and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P.
and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }'
chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars,
S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713.
ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,”
Applied Physics Letters, vol. 87, no. 24, 2005.
mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied
Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713.
short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S.
Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:47:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2147713
extern: '1'
intvolume: ' 87'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: GaN blue photonic crystal membrane nanocavities
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7654'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters, 87(16).
https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, volume={87}, DOI={10.1063/1.2112192},
number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk
and Wieck, Andreas D.}, year={2005} }'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005).
https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, vol. 87, no. 16, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:48:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2112192
extern: '1'
intvolume: ' 87'
issue: '16'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7655'
article_number: '101107'
author:
- first_name: A.
full_name: David, A.
last_name: David
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: F. S.
full_name: Diana, F. S.
last_name: Diana
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E.
full_name: Hu, E.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: C.
full_name: Weisbuch, C.
last_name: Weisbuch
- first_name: H.
full_name: Benisty, H.
last_name: Benisty
citation:
ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned
multimode GaN waveguides for light extraction. Applied Physics Letters.
2005;87(10). doi:10.1063/1.2039987
apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., …
Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN
waveguides for light extraction. Applied Physics Letters, 87(10).
https://doi.org/10.1063/1.2039987
bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005,
title={Photonic bands in two-dimensionally patterned multimode GaN waveguides
for light extraction}, volume={87}, DOI={10.1063/1.2039987},
number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars,
S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005}
}'
chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu,
S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally
Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters
87, no. 10 (2005). https://doi.org/10.1063/1.2039987.
ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode
GaN waveguides for light extraction,” Applied Physics Letters, vol. 87,
no. 10, 2005.
mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode
GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87,
no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987.
short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura,
C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:48:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2039987
extern: '1'
intvolume: ' 87'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for
light extraction
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7656'
article_number: '051107'
author:
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
citation:
ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based
air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380
apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005).
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated
using band-gap-selective photoelectrochemical etching. Applied Physics Letters,
87(5). https://doi.org/10.1063/1.2008380
bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented
GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380},
number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura,
S.}, year={2005} }'
chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically
Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using
Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters
87, no. 5 (2005). https://doi.org/10.1063/1.2008380.
ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically
oriented GaN-based air-gap distributed Bragg reflector structure fabricated using
band-gap-selective photoelectrochemical etching,” Applied Physics Letters,
vol. 87, no. 5, 2005.
mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg
Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.”
Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005,
doi:10.1063/1.2008380.
short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:50:37Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2008380
extern: '1'
intvolume: ' 87'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure
fabricated using band-gap-selective photoelectrochemical etching
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7659'
article_number: '031901'
author:
- first_name: Arpan
full_name: Chakraborty, Arpan
last_name: Chakraborty
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Benjamin A.
full_name: Haskell, Benjamin A.
last_name: Haskell
- first_name: Salka
full_name: Keller, Salka
last_name: Keller
- first_name: Patrick
full_name: Waltereit, Patrick
last_name: Waltereit
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: James S.
full_name: Speck, James S.
last_name: Speck
- first_name: Umesh K.
full_name: Mishra, Umesh K.
last_name: Mishra
citation:
ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN
multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied
Physics Letters. 2005;86(3). doi:10.1063/1.1851007
apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit,
P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics
Letters, 86(3). https://doi.org/10.1063/1.1851007
bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005,
title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on
lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007},
number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin
A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura,
Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }'
chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka
Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck,
and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum
Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics
Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007.
ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied
Physics Letters, vol. 86, no. 3, 2005.
mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple
Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied
Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007.
short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit,
S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86
(2005).
date_created: 2019-02-13T12:27:05Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1851007
extern: '1'
intvolume: ' 86'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral
epitaxially overgrown a-plane GaN
type: journal_article
user_id: '20798'
volume: 86
year: '2005'
...
---
_id: '8679'
article_number: '162110'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Werner, C.
last_name: Werner
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
citation:
ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional
lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829
apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion
characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters.
https://doi.org/10.1063/1.1897829
bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics
of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829},
number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner,
C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }'
chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics
of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005.
https://doi.org/10.1063/1.1897829.
ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics
of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005.
mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral
P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829.
short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005).
date_created: 2019-03-27T09:32:08Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1897829
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Depletion characteristics of two-dimensional lateral p‐n-junctions
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8683'
article_number: '042104'
author:
- first_name: T.
full_name: Müller, T.
last_name: Müller
- first_name: A.
full_name: Würtz, A.
last_name: Würtz
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a
driven electron ratchet in a two-dimensional electron system. Applied Physics
Letters. 2005. doi:10.1063/1.2001740
apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form
sampling using a driven electron ratchet in a two-dimensional electron system.
Applied Physics Letters. https://doi.org/10.1063/1.2001740
bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104},
journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke,
A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }'
chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form
Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.”
Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740.
ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system,” Applied
Physics Letters, 2005.
mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a
Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005,
doi:10.1063/1.2001740.
short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
(2005).
date_created: 2019-03-27T10:19:20Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2001740
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron
system
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8685'
article_number: '032502'
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: C.
full_name: Brenner, C.
last_name: Brenner
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from
ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843
apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter,
D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic
contacts in remanence. Applied Physics Letters. https://doi.org/10.1063/1.1996843
bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005,
title={Electron spin injection into GaAs from ferromagnetic contacts in remanence},
DOI={10.1063/1.1996843}, number={032502},
journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner,
C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Westerholt, K.}, year={2005} }'
chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter,
A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection
into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters,
2005. https://doi.org/10.1063/1.1996843.
ieee: N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic
contacts in remanence,” Applied Physics Letters, 2005.
mla: Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic
Contacts in Remanence.” Applied Physics Letters, 032502, 2005, doi:10.1063/1.1996843.
short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D.
Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005).
date_created: 2019-03-27T10:21:16Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1996843
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electron spin injection into GaAs from ferromagnetic contacts in remanence
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8690'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005. doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, DOI={10.1063/1.2112192},
number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan
and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, 163117, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T10:39:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2112192
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8691'
article_number: '232108'
author:
- first_name: Boris
full_name: Grbić, Boris
last_name: Grbić
- first_name: Renaud
full_name: Leturcq, Renaud
last_name: Leturcq
- first_name: Klaus
full_name: Ensslin, Klaus
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in
p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994
apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005).
Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics
Letters. https://doi.org/10.1063/1.2139994
bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor
in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994},
number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq,
Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D.
Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied
Physics Letters, 2005. https://doi.org/10.1063/1.2139994.
ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole
transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters,
2005.
mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.”
Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994.
short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T11:12:28Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2139994
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '29691'
article_number: '152102'
author:
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: D.
full_name: Junk, D.
last_name: Junk
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions
with ion-bombardment-modified exchange bias. Applied Physics Letters. 2005;86(15).
doi:10.1063/1.1899771
apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., &
Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified
exchange bias. Applied Physics Letters, 86(15), Article 152102.
https://doi.org/10.1063/1.1899771
bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing
of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86},
DOI={10.1063/1.1899771}, number={15152102},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink,
V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk,
D. and Ehresmann, A.}, year={2005} }'
chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and
A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters 86, no. 15 (2005). https://doi.org/10.1063/1.1899771.
ieee: 'V. Höink et al., “Postannealing of magnetic tunnel junctions with
ion-bombardment-modified exchange bias,” Applied Physics Letters, vol.
86, no. 15, Art. no. 152102, 2005, doi: 10.1063/1.1899771.'
mla: Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters, vol. 86, no. 15, 152102, AIP Publishing,
2005, doi:10.1063/1.1899771.
short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann,
Applied Physics Letters 86 (2005).
date_created: 2022-01-31T10:21:57Z
date_updated: 2022-01-31T10:22:19Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1899771
extern: '1'
intvolume: ' 86'
issue: '15'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange
bias
type: journal_article
user_id: '26883'
volume: 86
year: '2005'
...
---
_id: '39764'
article_number: '241105'
author:
- first_name: Heinrich
full_name: Matthias, Heinrich
last_name: Matthias
- first_name: Thorsten
full_name: Röder, Thorsten
last_name: Röder
- first_name: Ralf B.
full_name: Wehrspohn, Ralf B.
last_name: Wehrspohn
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Sven
full_name: Matthias, Sven
last_name: Matthias
- first_name: Stephen J.
full_name: Picken, Stephen J.
last_name: Picken
citation:
ama: Matthias H, Röder T, Wehrspohn RB, Kitzerow H-S, Matthias S, Picken SJ. Spatially
periodic liquid crystal director field appearing in a photonic crystal template.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2142100
apa: Matthias, H., Röder, T., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., &
Picken, S. J. (2005). Spatially periodic liquid crystal director field appearing
in a photonic crystal template. Applied Physics Letters, 87(24),
Article 241105. https://doi.org/10.1063/1.2142100
bibtex: '@article{Matthias_Röder_Wehrspohn_Kitzerow_Matthias_Picken_2005, title={Spatially
periodic liquid crystal director field appearing in a photonic crystal template},
volume={87}, DOI={10.1063/1.2142100},
number={24241105}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow,
Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}, year={2005} }'
chicago: Matthias, Heinrich, Thorsten Röder, Ralf B. Wehrspohn, Heinz-Siegfried
Kitzerow, Sven Matthias, and Stephen J. Picken. “Spatially Periodic Liquid Crystal
Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters
87, no. 24 (2005). https://doi.org/10.1063/1.2142100.
ieee: 'H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and
S. J. Picken, “Spatially periodic liquid crystal director field appearing in a
photonic crystal template,” Applied Physics Letters, vol. 87, no. 24, Art.
no. 241105, 2005, doi: 10.1063/1.2142100.'
mla: Matthias, Heinrich, et al. “Spatially Periodic Liquid Crystal Director Field
Appearing in a Photonic Crystal Template.” Applied Physics Letters, vol.
87, no. 24, 241105, AIP Publishing, 2005, doi:10.1063/1.2142100.
short: H. Matthias, T. Röder, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, S.J.
Picken, Applied Physics Letters 87 (2005).
date_created: 2023-01-24T19:10:38Z
date_updated: 2023-01-24T19:11:03Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2142100
intvolume: ' 87'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Spatially periodic liquid crystal director field appearing in a photonic crystal
template
type: journal_article
user_id: '254'
volume: 87
year: '2005'
...
---
_id: '39767'
article_number: '241108'
author:
- first_name: G.
full_name: Mertens, G.
last_name: Mertens
- first_name: R. B.
full_name: Wehrspohn, R. B.
last_name: Wehrspohn
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: S.
full_name: Matthias, S.
last_name: Matthias
- first_name: C.
full_name: Jamois, C.
last_name: Jamois
- first_name: U.
full_name: Gösele, U.
last_name: Gösele
citation:
ama: Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable
defect mode in a three-dimensional photonic crystal. Applied Physics Letters.
2005;87(24). doi:10.1063/1.2139846
apa: Mertens, G., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., Jamois, C., &
Gösele, U. (2005). Tunable defect mode in a three-dimensional photonic crystal.
Applied Physics Letters, 87(24), Article 241108. https://doi.org/10.1063/1.2139846
bibtex: '@article{Mertens_Wehrspohn_Kitzerow_Matthias_Jamois_Gösele_2005, title={Tunable
defect mode in a three-dimensional photonic crystal}, volume={87}, DOI={10.1063/1.2139846},
number={24241108}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias,
S. and Jamois, C. and Gösele, U.}, year={2005} }'
chicago: Mertens, G., R. B. Wehrspohn, Heinz-Siegfried Kitzerow, S. Matthias, C.
Jamois, and U. Gösele. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2139846.
ieee: 'G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and
U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,” Applied
Physics Letters, vol. 87, no. 24, Art. no. 241108, 2005, doi: 10.1063/1.2139846.'
mla: Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.”
Applied Physics Letters, vol. 87, no. 24, 241108, AIP Publishing, 2005,
doi:10.1063/1.2139846.
short: G. Mertens, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, U. Gösele,
Applied Physics Letters 87 (2005).
date_created: 2023-01-24T19:12:37Z
date_updated: 2023-01-24T19:13:14Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2139846
intvolume: ' 87'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tunable defect mode in a three-dimensional photonic crystal
type: journal_article
user_id: '254'
volume: 87
year: '2005'
...
---
_id: '39768'
article_number: '031104'
author:
- first_name: Lutz
full_name: Paelke, Lutz
last_name: Paelke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Peter
full_name: Strohriegl, Peter
last_name: Strohriegl
citation:
ama: Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid
crystal based on a photoconducting polysiloxane. Applied Physics Letters.
2005;86(3). doi:10.1063/1.1852082
apa: Paelke, L., Kitzerow, H.-S., & Strohriegl, P. (2005). Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters,
86(3), Article 031104. https://doi.org/10.1063/1.1852082
bibtex: '@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={10.1063/1.1852082}, number={3031104},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke,
Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }'
chicago: Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive
Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied
Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1852082.
ieee: 'L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane,” Applied Physics Letters,
vol. 86, no. 3, Art. no. 031104, 2005, doi: 10.1063/1.1852082.'
mla: Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based
on a Photoconducting Polysiloxane.” Applied Physics Letters, vol. 86, no.
3, 031104, AIP Publishing, 2005, doi:10.1063/1.1852082.
short: L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T19:13:33Z
date_updated: 2023-01-24T19:13:50Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1852082
intvolume: ' 86'
issue: '3'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane
type: journal_article
user_id: '254'
volume: 86
year: '2005'
...
---
_id: '23507'
abstract:
- lang: eng
text: "A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs
quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination.
The calculations show that, as long as good material quality can be achieved,
growing highly compressively strained samples is preferable due to their specific
band structure properties. Optimum laser operation is possible slightly above
a peak gain of 1000cm−1\r\n."
article_number: '261109'
author:
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: W. W.
full_name: Chow, W. W.
last_name: Chow
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: J. V.
full_name: Moloney, J. V.
last_name: Moloney
citation:
ama: Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of
(GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters.
2005;87(26). doi:10.1063/1.2149371
apa: Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader,
J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures
in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article
261109. https://doi.org/10.1063/1.2149371
bibtex: '@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005,
title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550
nm range}, volume={87}, DOI={10.1063/1.2149371},
number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier,
C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader,
J. and Moloney, J. V.}, year={2005} }'
chicago: Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow,
J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005).
https://doi.org/10.1063/1.2149371.
ieee: 'C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs)
heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol.
87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.'
mla: Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109,
2005, doi:10.1063/1.2149371.
short: C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader,
J.V. Moloney, Applied Physics Letters 87 (2005).
date_created: 2021-08-24T09:29:41Z
date_updated: 2023-04-24T06:00:23Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1063/1.2149371
extern: '1'
intvolume: ' 87'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm
range
type: journal_article
user_id: '49063'
volume: 87
year: '2005'
...
---
_id: '39574'
article_number: '024104'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: J.
full_name: Hu, J.
last_name: Hu
- first_name: J.
full_name: Kanzow, J.
last_name: Kanzow
- first_name: K.
full_name: Rätzke, K.
last_name: Rätzke
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: S.
full_name: Meyer, S.
last_name: Meyer
- first_name: J.
full_name: Pflaum, J.
last_name: Pflaum
citation:
ama: Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive
tool for the detection of metal penetration in molecular-based organic electronics.
Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845
apa: Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann,
C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements
as a sensitive tool for the detection of metal penetration in molecular-based
organic electronics. Applied Physics Letters, 86(2), Article 024104.
https://doi.org/10.1063/1.1849845
bibtex: '@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005,
title={Radiotracer measurements as a sensitive tool for the detection of metal
penetration in molecular-based organic electronics}, volume={86}, DOI={10.1063/1.1849845},
number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R.
and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum,
J.}, year={2005} }'
chicago: Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C.
Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements
as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based
Organic Electronics.” Applied Physics Letters 86, no. 2 (2005). https://doi.org/10.1063/1.1849845.
ieee: 'M. Scharnberg et al., “Radiotracer measurements as a sensitive tool
for the detection of metal penetration in molecular-based organic electronics,”
Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845.'
mla: Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the
Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied
Physics Letters, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:10.1063/1.1849845.
short: M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann,
U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T12:21:59Z
date_updated: 2023-03-22T10:34:05Z
department:
- _id: '59'
doi: 10.1063/1.1849845
intvolume: ' 86'
issue: '2'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Radiotracer measurements as a sensitive tool for the detection of metal penetration
in molecular-based organic electronics
type: journal_article
user_id: '20179'
volume: 86
year: '2005'
...
---
_id: '7678'
author:
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. R.
full_name: Stonas, A. R.
last_name: Stonas
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
citation:
ama: Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN
microdisk lasers fabricated by photoelectrochemical etching. Applied Physics
Letters. 2004;85(22):5179-5181. doi:10.1063/1.1829167
apa: Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars,
S. P., & Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching. Applied Physics Letters,
85(22), 5179–5181. https://doi.org/10.1063/1.1829167
bibtex: '@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing,
optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching}, volume={85}, DOI={10.1063/1.1829167},
number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer,
E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and
DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }'
chicago: 'Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S.
P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters
85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.'
ieee: E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching,” Applied Physics Letters,
vol. 85, no. 22, pp. 5179–5181, 2004.
mla: Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters,
vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167.
short: E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars,
E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181.
date_created: 2019-02-13T14:47:45Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1829167
extern: '1'
intvolume: ' 85'
issue: '22'
language:
- iso: eng
page: 5179-5181
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching
type: journal_article
user_id: '20798'
volume: 85
year: '2004'
...
---
_id: '8696'
author:
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
- first_name: A.
full_name: Yesayan, A.
last_name: Yesayan
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional
p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316
apa: Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly
graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315.
https://doi.org/10.1063/1.1736316
bibtex: '@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded
two-dimensional p–n junction}, DOI={10.1063/1.1736316},
journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter,
Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }'
chicago: Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly
Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15.
https://doi.org/10.1063/1.1736316.
ieee: S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded
two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315,
2004.
mla: Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied
Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316.
short: S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters
(2004) 3313–3315.
date_created: 2019-03-27T11:43:00Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1736316
language:
- iso: eng
page: 3313-3315
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: The linearly graded two-dimensional p–n junction
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '8711'
author:
- first_name: B.
full_name: Grbić, B.
last_name: Grbić
- first_name: C.
full_name: Ellenberger, C.
last_name: Ellenberger
- first_name: T.
full_name: Ihn, T.
last_name: Ihn
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport
in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279.
doi:10.1063/1.1781750
apa: Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck,
A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied
Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750
bibtex: '@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport
in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750},
journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn,
T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279}
}'
chicago: Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck.
“Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters,
2004, 2277–79. https://doi.org/10.1063/1.1781750.
ieee: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck,
“Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters,
pp. 2277–2279, 2004.
mla: Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied
Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750.
short: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied
Physics Letters (2004) 2277–2279.
date_created: 2019-03-27T12:21:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1781750
language:
- iso: eng
page: 2277-2279
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in C-doped AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2004'
...