---
_id: '8585'
article_number: '022113'
author:
- first_name: B.
full_name: Marquardt, B.
last_name: Marquardt
- first_name: M.
full_name: Geller, M.
last_name: Geller
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724
apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009).
Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots. Applied Physics Letters.
https://doi.org/10.1063/1.3175724
bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots}, DOI={10.1063/1.3175724},
number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and
Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }'
chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using
a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and
Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters,
2009. https://doi.org/10.1063/1.3175724.
ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional
electron gas to study nonequilibrium tunneling dynamics and charge storage in
self-assembled quantum dots,” Applied Physics Letters, 2009.
mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium
Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied
Physics Letters, 022113, 2009, doi:10.1063/1.3175724.
short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2009).
date_created: 2019-03-26T08:55:40Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.3175724
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics
and charge storage in self-assembled quantum dots
type: journal_article
user_id: '42514'
year: '2009'
...
---
_id: '7640'
article_number: '193111'
author:
- first_name: W.
full_name: Lei, W.
last_name: Lei
- first_name: M.
full_name: Offer, M.
last_name: Offer
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: C.
full_name: Notthoff, C.
last_name: Notthoff
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: O.
full_name: Wibbelhoff, O.
last_name: Wibbelhoff
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum
dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics
Letters. 2008;92(19). doi:10.1063/1.2920439
apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., &
Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy. Applied Physics Letters, 92(19).
https://doi.org/10.1063/1.2920439
bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing
the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence
spectroscopy}, volume={92}, DOI={10.1063/1.2920439},
number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik
and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }'
chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff,
and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19
(2008). https://doi.org/10.1063/1.2920439.
ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots
by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics
Letters, vol. 92, no. 19, 2008.
mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage
and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92,
no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439.
short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck,
Applied Physics Letters 92 (2008).
date_created: 2019-02-13T11:30:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2920439
extern: '1'
intvolume: ' 92'
issue: '19'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage
and photoluminescence spectroscopy
type: journal_article
user_id: '20798'
volume: 92
year: '2008'
...
---
_id: '8603'
article_number: '112111'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Y.
full_name: Cordier, Y.
last_name: Cordier
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted
wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied
Physics Letters. 2008. doi:10.1063/1.2899968
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008).
Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968
bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures},
DOI={10.1063/1.2899968}, number={112111},
journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter,
Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport
in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968.
ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport
in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,”
Applied Physics Letters, 2008.
mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN
High Electron Mobility Transistor Structures.” Applied Physics Letters,
112111, 2008, doi:10.1063/1.2899968.
short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:26:36Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2899968
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility
transistor structures
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8607'
article_number: '241920'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: J.
full_name: Nannen, J.
last_name: Nannen
- first_name: S.
full_name: Halm, S.
last_name: Halm
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: M.
full_name: Wahle, M.
last_name: Wahle
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs
hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279
apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F.,
… Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room
temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279
bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008,
title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature},
DOI={10.1063/1.2943279}, number={241920},
journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm,
S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk
and Wieck, A. D.}, year={2008} }'
chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer,
U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs
Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279.
ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids
at room temperature,” Applied Physics Letters, 2008.
mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at
Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279.
short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze,
D. Reuter, A.D. Wieck, Applied Physics Letters (2008).
date_created: 2019-03-26T09:51:24Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2943279
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8608'
article_number: '242102'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced
spins both at room temperature and in remanence. Applied Physics Letters.
2008. doi:10.1063/1.2948856
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A.
D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at
room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et
al._2008, title={Electrical detection of photoinduced spins both at room temperature
and in remanence}, DOI={10.1063/1.2948856},
number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt,
N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D.
Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at
Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856.
ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at
room temperature and in remanence,” Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room
Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E.
Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters
(2008).
date_created: 2019-03-26T09:52:27Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2948856
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electrical detection of photoinduced spins both at room temperature and in
remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '8609'
article_number: '021117'
author:
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Ludwig, A.
last_name: Ludwig
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: H.
full_name: Wende, H.
last_name: Wende
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: O.
full_name: Petracic, O.
last_name: Petracic
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection
in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469
apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter,
D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence.
Applied Physics Letters. https://doi.org/10.1063/1.2957469
bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et
al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117},
journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann,
M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Wende, H. and Keune, W. and et al.}, year={2008} }'
chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter,
A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469.
ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,”
Applied Physics Letters, 2008.
mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.”
Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469.
short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D.
Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics
Letters (2008).
date_created: 2019-03-26T09:53:44Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2957469
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Room temperature electrical spin injection in remanence
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '39749'
article_number: '131903'
author:
- first_name: A.
full_name: Hoischen, A.
last_name: Hoischen
- first_name: S. A.
full_name: Benning, S. A.
last_name: Benning
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed
by photopolymerization of dissipative structures. Applied Physics Letters.
2008;93(13). doi:10.1063/1.2990762
apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures. Applied Physics
Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762
bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic
patterns fixed by photopolymerization of dissipative structures}, volume={93},
DOI={10.1063/1.2990762}, number={13131903},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen,
A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer
Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied
Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762.
ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns
fixed by photopolymerization of dissipative structures,” Applied Physics Letters,
vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.'
mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization
of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903,
AIP Publishing, 2008, doi:10.1063/1.2990762.
short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:52:43Z
date_updated: 2023-01-24T18:53:04Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2990762
intvolume: ' 93'
issue: '13'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Submicrometer periodic patterns fixed by photopolymerization of dissipative
structures
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '39751'
article_number: '183304'
author:
- first_name: Andreas
full_name: Redler, Andreas
last_name: Redler
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
citation:
ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties
of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18).
doi:10.1063/1.3021364
apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal. Applied Physics Letters,
93(18), Article 183304. https://doi.org/10.1063/1.3021364
bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364},
number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }'
chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on
the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364.
ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive
properties of a polymer-dispersed liquid crystal,” Applied Physics Letters,
vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.'
mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the
Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied
Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364.
short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008).
date_created: 2023-01-24T18:53:20Z
date_updated: 2023-01-24T18:53:34Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.3021364
intvolume: ' 93'
issue: '18'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Influence of doping on the photorefractive properties of a polymer-dispersed
liquid crystal
type: journal_article
user_id: '254'
volume: 93
year: '2008'
...
---
_id: '26076'
article_number: '151109'
author:
- first_name: Xiao-Feng
full_name: Han, Xiao-Feng
last_name: Han
- first_name: Yu-Xiang
full_name: Weng, Yu-Xiang
last_name: Weng
- first_name: Rui
full_name: Wang, Rui
last_name: Wang
- first_name: Xi-Hao
full_name: Chen, Xi-Hao
last_name: Chen
- first_name: Kai Hong
full_name: Luo, Kai Hong
id: '36389'
last_name: Luo
orcid: 0000-0003-1008-4976
- first_name: Ling-An
full_name: Wu, Ling-An
last_name: Wu
- first_name: Jimin
full_name: Zhao, Jimin
last_name: Zhao
citation:
ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical
switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540
apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., &
Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied
Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540
bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level
ultrafast all-optical switching}, DOI={10.1063/1.2909540},
number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and
Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An
and Zhao, Jimin}, year={2008} }'
chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An
Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied
Physics Letters, 2008. https://doi.org/10.1063/1.2909540.
ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,”
Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.'
mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.”
Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540.
short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao,
Applied Physics Letters (2008).
date_created: 2021-10-12T08:46:00Z
date_updated: 2023-01-26T10:08:30Z
doi: 10.1063/1.2909540
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-photon level ultrafast all-optical switching
type: journal_article
user_id: '36389'
year: '2008'
...
---
_id: '1761'
article_number: '151109'
author:
- first_name: Carsten
full_name: Rockstuhl, Carsten
last_name: Rockstuhl
- first_name: Falk
full_name: Lederer, Falk
last_name: Lederer
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: Harald
full_name: Giessen, Harald
last_name: Giessen
citation:
ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic,
quasiperiodic, and random nanoaperture arrays. Applied Physics Letters.
2007;91(15). doi:10.1063/1.2799240
apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced
transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied
Physics Letters, 91(15). https://doi.org/10.1063/1.2799240
bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl,
Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007}
}'
chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen.
“Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.”
Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240.
ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission
of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics
Letters, vol. 91, no. 15, 2007.
mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic,
and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no.
15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240.
short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters
91 (2007).
date_created: 2018-03-23T13:07:38Z
date_updated: 2022-01-06T06:53:16Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2799240
intvolume: ' 91'
issue: '15'
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays
type: journal_article
user_id: '30525'
volume: 91
year: '2007'
...
---
_id: '7644'
article_number: '143113'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
citation:
ama: Meier C, Hennessy K. Technique for tilting GaAs photonic crystal nanocavities
out of plane. Applied Physics Letters. 2007;90(14). doi:10.1063/1.2719612
apa: Meier, C., & Hennessy, K. (2007). Technique for tilting GaAs photonic crystal
nanocavities out of plane. Applied Physics Letters, 90(14). https://doi.org/10.1063/1.2719612
bibtex: '@article{Meier_Hennessy_2007, title={Technique for tilting GaAs photonic
crystal nanocavities out of plane}, volume={90}, DOI={10.1063/1.2719612},
number={14143113}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin}, year={2007} }'
chicago: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic
Crystal Nanocavities out of Plane.” Applied Physics Letters 90, no. 14
(2007). https://doi.org/10.1063/1.2719612.
ieee: C. Meier and K. Hennessy, “Technique for tilting GaAs photonic crystal nanocavities
out of plane,” Applied Physics Letters, vol. 90, no. 14, 2007.
mla: Meier, Cedrik, and Kevin Hennessy. “Technique for Tilting GaAs Photonic Crystal
Nanocavities out of Plane.” Applied Physics Letters, vol. 90, no. 14, 143113,
AIP Publishing, 2007, doi:10.1063/1.2719612.
short: C. Meier, K. Hennessy, Applied Physics Letters 90 (2007).
date_created: 2019-02-13T11:34:33Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2719612
extern: '1'
intvolume: ' 90'
issue: '14'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Technique for tilting GaAs photonic crystal nanocavities out of plane
type: journal_article
user_id: '20798'
volume: 90
year: '2007'
...
---
_id: '8630'
article_number: '262505'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: V.
full_name: Ney, V.
last_name: Ney
- first_name: T.
full_name: Kammermeier, T.
last_name: Kammermeier
- first_name: A.
full_name: Ney, A.
last_name: Ney
- first_name: J.
full_name: Schörmann, J.
last_name: Schörmann
- first_name: S.
full_name: Potthast, S.
last_name: Potthast
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of
Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T.,
… Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende
GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113
bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et
al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende
GaN}, DOI={10.1063/1.2753113},
number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov,
A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney,
A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier,
A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.
ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted
zinc-blende GaN,” Applied Physics Letters, 2007.
mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.
short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A.
Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).
date_created: 2019-03-26T10:23:42Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2753113
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetic and structural properties of Gd-implanted zinc-blende GaN
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '8632'
article_number: '123108'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A.
full_name: Remhof, A.
last_name: Remhof
citation:
ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation
induced site-selective growth of InAs quantum dots. Applied Physics Letters.
2007. doi:10.1063/1.2786836
apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007).
Focused ion beam implantation induced site-selective growth of InAs quantum dots.
Applied Physics Letters. https://doi.org/10.1063/1.2786836
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam
implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836},
number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter,
Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }'
chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused
Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2786836.
ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion
beam implantation induced site-selective growth of InAs quantum dots,” Applied
Physics Letters, 2007.
mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth
of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.
short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics
Letters (2007).
date_created: 2019-03-26T10:26:08Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2786836
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Focused ion beam implantation induced site-selective growth of InAs quantum
dots
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '25986'
abstract:
- lang: eng
text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically
ordered, uniform pore system with crystalline pore walls. The crystalline structure
is investigated by x-ray diffraction, transmission electron microscopy, and selected
area electron diffraction. The large specific surface area and the uniformity
of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy
along with low-temperature photoluminescence measurements confirms the high degree
of crystallinity and gives insight into defects participating in the radiative
recombination processes.\r\nThe authors thank Günter Koch for recording the TEM
images and Marie-Luise Wolff for valuable help in the laboratory one of the authors
(M.T.) thanks Michael Fröba for the continuous support."
article_number: '123108'
article_type: original
author:
- first_name: T.
full_name: Waitz, T.
last_name: Waitz
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: P. J.
full_name: Klar, P. J.
last_name: Klar
- first_name: J.
full_name: Sann, J.
last_name: Sann
- first_name: J.
full_name: Stehr, J.
last_name: Stehr
- first_name: B. K.
full_name: Meyer, B. K.
last_name: Meyer
citation:
ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with
an enhanced surface area obtained by nanocasting. Applied Physics Letters.
Published online 2007. doi:10.1063/1.2713872
apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K.
(2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting.
Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872
bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO
with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872},
number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann,
Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007}
}'
chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer.
“Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2713872.
ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline
ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics
Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.'
mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by
Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872.
short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics
Letters (2007).
date_created: 2021-10-09T09:40:39Z
date_updated: 2023-03-09T08:49:01Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1063/1.2713872
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
quality_controlled: '1'
status: public
title: Crystalline ZnO with an enhanced surface area obtained by nanocasting
type: journal_article
user_id: '23547'
year: '2007'
...
---
_id: '39561'
article_number: '013501'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: V.
full_name: Zaporojtchenko, V.
last_name: Zaporojtchenko
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: T.
full_name: Diekmann, T.
last_name: Diekmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage
of organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters. 2007;90(1). doi:10.1063/1.2426926
apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C.,
Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of
organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926
bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007,
title={Tuning the threshold voltage of organic field-effect transistors by an
electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926},
number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and
Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }'
chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann,
T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic
Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics
Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.
ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect
transistors by an electret encapsulating layer,” Applied Physics Letters,
vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.'
mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect
Transistors by an Electret Encapsulating Layer.” Applied Physics Letters,
vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.
short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T.
Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).
date_created: 2023-01-24T12:15:22Z
date_updated: 2023-03-21T10:15:06Z
department:
- _id: '59'
doi: 10.1063/1.2426926
intvolume: ' 90'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tuning the threshold voltage of organic field-effect transistors by an electret
encapsulating layer
type: journal_article
user_id: '20179'
volume: 90
year: '2007'
...
---
_id: '7651'
article_number: '031111'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
- first_name: Elaine D.
full_name: Haberer, Elaine D.
last_name: Haberer
- first_name: Rajat
full_name: Sharma, Rajat
last_name: Sharma
- first_name: Yong-Seok
full_name: Choi, Yong-Seok
last_name: Choi
- first_name: Kelly
full_name: McGroddy, Kelly
last_name: McGroddy
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: Evelyn L.
full_name: Hu, Evelyn L.
last_name: Hu
citation:
ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based
photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3).
doi:10.1063/1.2166680
apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy,
K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane
cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680
bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006,
title={Visible resonant modes in GaN-based photonic crystal membrane cavities},
volume={88}, DOI={10.1063/1.2166680},
number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat
and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven
P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }'
chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok
Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn
L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.”
Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680.
ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal
membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.
mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal
Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP
Publishing, 2006, doi:10.1063/1.2166680.
short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy,
S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).
date_created: 2019-02-13T11:41:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2166680
extern: '1'
intvolume: ' 88'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Visible resonant modes in GaN-based photonic crystal membrane cavities
type: journal_article
user_id: '20798'
volume: 88
year: '2006'
...
---
_id: '8648'
article_number: '082110'
author:
- first_name: M.
full_name: Knop, M.
last_name: Knop
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an
asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618
apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic
rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters.
https://doi.org/10.1063/1.2179618
bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification
in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618},
number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser,
U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic
Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics
Letters, 2006. https://doi.org/10.1063/1.2179618.
ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification
in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006.
mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross
Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618.
short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
(2006).
date_created: 2019-03-27T07:54:36Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2179618
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ballistic rectification in an asymmetric mesoscopic cross junction
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8654'
article_number: '121115'
author:
- first_name: R.
full_name: Schmidt, R.
last_name: Schmidt
- first_name: U.
full_name: Scholz, U.
last_name: Scholz
- first_name: M.
full_name: Vitzethum, M.
last_name: Vitzethum
- first_name: R.
full_name: Fix, R.
last_name: Fix
- first_name: C.
full_name: Metzner, C.
last_name: Metzner
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: M. C.
full_name: Hübner, M. C.
last_name: Hübner
- first_name: S.
full_name: Stufler, S.
last_name: Stufler
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: S.
full_name: Malzer, S.
last_name: Malzer
- first_name: G. H.
full_name: Döhler, G. H.
last_name: Döhler
citation:
ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot
light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057
apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P.,
… Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting
diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057
bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et
al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes},
DOI={10.1063/1.2188057}, number={121115},
journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum,
M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A.
and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }'
chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit,
Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.
ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting
diodes,” Applied Physics Letters, 2006.
mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057.
short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D.
Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler,
Applied Physics Letters (2006).
date_created: 2019-03-27T08:21:39Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2188057
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of genuine single-quantum-dot light-emitting diodes
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8665'
article_number: '123105'
author:
- first_name: V.
full_name: Stavarache, V.
last_name: Stavarache
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Schwab, M.
last_name: Schwab
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: R.
full_name: Oulton, R.
last_name: Oulton
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by
lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233
apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton,
R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric
fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233
bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control
of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233},
number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and
Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R.
and Bayer, M.}, year={2006} }'
chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R.
Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.”
Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233.
ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric
fields,” Applied Physics Letters, 2006.
mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric
Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233.
short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton,
M. Bayer, Applied Physics Letters (2006).
date_created: 2019-03-27T08:39:57Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2345233
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Control of quantum dot excitons by lateral electric fields
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8671'
article_number: '231101'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk
GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909
apa: Hohage, P. E., Bacher, G., Reuter, D., & Wieck, A. D. (2006). Coherent
spin oscillations in bulk GaAs at room temperature. Applied Physics Letters.
https://doi.org/10.1063/1.2398909
bibtex: '@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations
in bulk GaAs at room temperature}, DOI={10.1063/1.2398909},
number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and
Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin
Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters,
2006. https://doi.org/10.1063/1.2398909.
ieee: P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations
in bulk GaAs at room temperature,” Applied Physics Letters, 2006.
mla: Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.”
Applied Physics Letters, 231101, 2006, doi:10.1063/1.2398909.
short: P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).
date_created: 2019-03-27T09:15:03Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2398909
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin oscillations in bulk GaAs at room temperature
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '29684'
article_number: '012502'
author:
- first_name: Andy
full_name: Thomas, Andy
last_name: Thomas
- first_name: Dirk
full_name: Meyners, Dirk
last_name: Meyners
- first_name: Daniel
full_name: Ebke, Daniel
last_name: Ebke
- first_name: Ning-Ning
full_name: Liu, Ning-Ning
last_name: Liu
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: Jan
full_name: Schmalhorst, Jan
last_name: Schmalhorst
- first_name: Günter
full_name: Reiss, Günter
last_name: Reiss
- first_name: Hubert
full_name: Ebert, Hubert
last_name: Ebert
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
citation:
ama: Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys
for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333
apa: Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J.,
Reiss, G., Ebert, H., & Hütten, A. (2006). Inverted spin polarization of Heusler
alloys for spintronic devices. Applied Physics Letters, 89(1), Article
012502. https://doi.org/10.1063/1.2219333
bibtex: '@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006,
title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89},
DOI={10.1063/1.2219333}, number={1012502},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas,
Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and
Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006}
}'
chicago: Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan
Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization
of Heusler Alloys for Spintronic Devices.” Applied Physics Letters 89,
no. 1 (2006). https://doi.org/10.1063/1.2219333.
ieee: 'A. Thomas et al., “Inverted spin polarization of Heusler alloys for
spintronic devices,” Applied Physics Letters, vol. 89, no. 1, Art. no.
012502, 2006, doi: 10.1063/1.2219333.'
mla: Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic
Devices.” Applied Physics Letters, vol. 89, no. 1, 012502, AIP Publishing,
2006, doi:10.1063/1.2219333.
short: A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G.
Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006).
date_created: 2022-01-31T10:16:33Z
date_updated: 2022-01-31T10:16:56Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.2219333
extern: '1'
intvolume: ' 89'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Inverted spin polarization of Heusler alloys for spintronic devices
type: journal_article
user_id: '26883'
volume: 89
year: '2006'
...
---
_id: '7653'
article_number: '243101'
author:
- first_name: Y.-S.
full_name: Choi, Y.-S.
last_name: Choi
- first_name: K.
full_name: Hennessy, K.
last_name: Hennessy
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E.
full_name: Haberer, E.
last_name: Haberer
- first_name: Y.
full_name: Gao, Y.
last_name: Gao
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713
apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P.,
… Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied
Physics Letters, 87(24). https://doi.org/10.1063/1.2147713
bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005,
title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S.
and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P.
and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }'
chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars,
S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713.
ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,”
Applied Physics Letters, vol. 87, no. 24, 2005.
mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied
Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713.
short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S.
Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:47:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2147713
extern: '1'
intvolume: ' 87'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: GaN blue photonic crystal membrane nanocavities
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7654'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters, 87(16).
https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, volume={87}, DOI={10.1063/1.2112192},
number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk
and Wieck, Andreas D.}, year={2005} }'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005).
https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, vol. 87, no. 16, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:48:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2112192
extern: '1'
intvolume: ' 87'
issue: '16'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7655'
article_number: '101107'
author:
- first_name: A.
full_name: David, A.
last_name: David
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: F. S.
full_name: Diana, F. S.
last_name: Diana
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E.
full_name: Hu, E.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: C.
full_name: Weisbuch, C.
last_name: Weisbuch
- first_name: H.
full_name: Benisty, H.
last_name: Benisty
citation:
ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned
multimode GaN waveguides for light extraction. Applied Physics Letters.
2005;87(10). doi:10.1063/1.2039987
apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., …
Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN
waveguides for light extraction. Applied Physics Letters, 87(10).
https://doi.org/10.1063/1.2039987
bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005,
title={Photonic bands in two-dimensionally patterned multimode GaN waveguides
for light extraction}, volume={87}, DOI={10.1063/1.2039987},
number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars,
S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005}
}'
chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu,
S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally
Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters
87, no. 10 (2005). https://doi.org/10.1063/1.2039987.
ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode
GaN waveguides for light extraction,” Applied Physics Letters, vol. 87,
no. 10, 2005.
mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode
GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87,
no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987.
short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura,
C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:48:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2039987
extern: '1'
intvolume: ' 87'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for
light extraction
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7656'
article_number: '051107'
author:
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
citation:
ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based
air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380
apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005).
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated
using band-gap-selective photoelectrochemical etching. Applied Physics Letters,
87(5). https://doi.org/10.1063/1.2008380
bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented
GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380},
number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura,
S.}, year={2005} }'
chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically
Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using
Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters
87, no. 5 (2005). https://doi.org/10.1063/1.2008380.
ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically
oriented GaN-based air-gap distributed Bragg reflector structure fabricated using
band-gap-selective photoelectrochemical etching,” Applied Physics Letters,
vol. 87, no. 5, 2005.
mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg
Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.”
Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005,
doi:10.1063/1.2008380.
short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:50:37Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2008380
extern: '1'
intvolume: ' 87'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure
fabricated using band-gap-selective photoelectrochemical etching
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7659'
article_number: '031901'
author:
- first_name: Arpan
full_name: Chakraborty, Arpan
last_name: Chakraborty
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Benjamin A.
full_name: Haskell, Benjamin A.
last_name: Haskell
- first_name: Salka
full_name: Keller, Salka
last_name: Keller
- first_name: Patrick
full_name: Waltereit, Patrick
last_name: Waltereit
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: James S.
full_name: Speck, James S.
last_name: Speck
- first_name: Umesh K.
full_name: Mishra, Umesh K.
last_name: Mishra
citation:
ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN
multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied
Physics Letters. 2005;86(3). doi:10.1063/1.1851007
apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit,
P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics
Letters, 86(3). https://doi.org/10.1063/1.1851007
bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005,
title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on
lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007},
number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin
A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura,
Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }'
chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka
Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck,
and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum
Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics
Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007.
ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied
Physics Letters, vol. 86, no. 3, 2005.
mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple
Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied
Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007.
short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit,
S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86
(2005).
date_created: 2019-02-13T12:27:05Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1851007
extern: '1'
intvolume: ' 86'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral
epitaxially overgrown a-plane GaN
type: journal_article
user_id: '20798'
volume: 86
year: '2005'
...
---
_id: '8679'
article_number: '162110'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Werner, C.
last_name: Werner
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
citation:
ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional
lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829
apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion
characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters.
https://doi.org/10.1063/1.1897829
bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics
of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829},
number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner,
C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }'
chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics
of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005.
https://doi.org/10.1063/1.1897829.
ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics
of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005.
mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral
P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829.
short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005).
date_created: 2019-03-27T09:32:08Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1897829
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Depletion characteristics of two-dimensional lateral p‐n-junctions
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8683'
article_number: '042104'
author:
- first_name: T.
full_name: Müller, T.
last_name: Müller
- first_name: A.
full_name: Würtz, A.
last_name: Würtz
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a
driven electron ratchet in a two-dimensional electron system. Applied Physics
Letters. 2005. doi:10.1063/1.2001740
apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form
sampling using a driven electron ratchet in a two-dimensional electron system.
Applied Physics Letters. https://doi.org/10.1063/1.2001740
bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104},
journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke,
A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }'
chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form
Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.”
Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740.
ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system,” Applied
Physics Letters, 2005.
mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a
Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005,
doi:10.1063/1.2001740.
short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
(2005).
date_created: 2019-03-27T10:19:20Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2001740
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron
system
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8685'
article_number: '032502'
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: C.
full_name: Brenner, C.
last_name: Brenner
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from
ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843
apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter,
D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic
contacts in remanence. Applied Physics Letters. https://doi.org/10.1063/1.1996843
bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005,
title={Electron spin injection into GaAs from ferromagnetic contacts in remanence},
DOI={10.1063/1.1996843}, number={032502},
journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner,
C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Westerholt, K.}, year={2005} }'
chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter,
A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection
into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters,
2005. https://doi.org/10.1063/1.1996843.
ieee: N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic
contacts in remanence,” Applied Physics Letters, 2005.
mla: Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic
Contacts in Remanence.” Applied Physics Letters, 032502, 2005, doi:10.1063/1.1996843.
short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D.
Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005).
date_created: 2019-03-27T10:21:16Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1996843
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electron spin injection into GaAs from ferromagnetic contacts in remanence
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8690'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005. doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, DOI={10.1063/1.2112192},
number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan
and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, 163117, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T10:39:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2112192
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8691'
article_number: '232108'
author:
- first_name: Boris
full_name: Grbić, Boris
last_name: Grbić
- first_name: Renaud
full_name: Leturcq, Renaud
last_name: Leturcq
- first_name: Klaus
full_name: Ensslin, Klaus
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in
p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994
apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005).
Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics
Letters. https://doi.org/10.1063/1.2139994
bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor
in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994},
number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq,
Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D.
Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied
Physics Letters, 2005. https://doi.org/10.1063/1.2139994.
ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole
transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters,
2005.
mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.”
Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994.
short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T11:12:28Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2139994
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '29691'
article_number: '152102'
author:
- first_name: V.
full_name: Höink, V.
last_name: Höink
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
- first_name: J.
full_name: Schmalhorst, J.
last_name: Schmalhorst
- first_name: G.
full_name: Reiss, G.
last_name: Reiss
- first_name: D.
full_name: Engel, D.
last_name: Engel
- first_name: D.
full_name: Junk, D.
last_name: Junk
- first_name: A.
full_name: Ehresmann, A.
last_name: Ehresmann
citation:
ama: Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions
with ion-bombardment-modified exchange bias. Applied Physics Letters. 2005;86(15).
doi:10.1063/1.1899771
apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., &
Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified
exchange bias. Applied Physics Letters, 86(15), Article 152102.
https://doi.org/10.1063/1.1899771
bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing
of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86},
DOI={10.1063/1.1899771}, number={15152102},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink,
V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk,
D. and Ehresmann, A.}, year={2005} }'
chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and
A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters 86, no. 15 (2005). https://doi.org/10.1063/1.1899771.
ieee: 'V. Höink et al., “Postannealing of magnetic tunnel junctions with
ion-bombardment-modified exchange bias,” Applied Physics Letters, vol.
86, no. 15, Art. no. 152102, 2005, doi: 10.1063/1.1899771.'
mla: Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified
Exchange Bias.” Applied Physics Letters, vol. 86, no. 15, 152102, AIP Publishing,
2005, doi:10.1063/1.1899771.
short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann,
Applied Physics Letters 86 (2005).
date_created: 2022-01-31T10:21:57Z
date_updated: 2022-01-31T10:22:19Z
department:
- _id: '15'
- _id: '576'
doi: 10.1063/1.1899771
extern: '1'
intvolume: ' 86'
issue: '15'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange
bias
type: journal_article
user_id: '26883'
volume: 86
year: '2005'
...
---
_id: '39764'
article_number: '241105'
author:
- first_name: Heinrich
full_name: Matthias, Heinrich
last_name: Matthias
- first_name: Thorsten
full_name: Röder, Thorsten
last_name: Röder
- first_name: Ralf B.
full_name: Wehrspohn, Ralf B.
last_name: Wehrspohn
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Sven
full_name: Matthias, Sven
last_name: Matthias
- first_name: Stephen J.
full_name: Picken, Stephen J.
last_name: Picken
citation:
ama: Matthias H, Röder T, Wehrspohn RB, Kitzerow H-S, Matthias S, Picken SJ. Spatially
periodic liquid crystal director field appearing in a photonic crystal template.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2142100
apa: Matthias, H., Röder, T., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., &
Picken, S. J. (2005). Spatially periodic liquid crystal director field appearing
in a photonic crystal template. Applied Physics Letters, 87(24),
Article 241105. https://doi.org/10.1063/1.2142100
bibtex: '@article{Matthias_Röder_Wehrspohn_Kitzerow_Matthias_Picken_2005, title={Spatially
periodic liquid crystal director field appearing in a photonic crystal template},
volume={87}, DOI={10.1063/1.2142100},
number={24241105}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow,
Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}, year={2005} }'
chicago: Matthias, Heinrich, Thorsten Röder, Ralf B. Wehrspohn, Heinz-Siegfried
Kitzerow, Sven Matthias, and Stephen J. Picken. “Spatially Periodic Liquid Crystal
Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters
87, no. 24 (2005). https://doi.org/10.1063/1.2142100.
ieee: 'H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and
S. J. Picken, “Spatially periodic liquid crystal director field appearing in a
photonic crystal template,” Applied Physics Letters, vol. 87, no. 24, Art.
no. 241105, 2005, doi: 10.1063/1.2142100.'
mla: Matthias, Heinrich, et al. “Spatially Periodic Liquid Crystal Director Field
Appearing in a Photonic Crystal Template.” Applied Physics Letters, vol.
87, no. 24, 241105, AIP Publishing, 2005, doi:10.1063/1.2142100.
short: H. Matthias, T. Röder, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, S.J.
Picken, Applied Physics Letters 87 (2005).
date_created: 2023-01-24T19:10:38Z
date_updated: 2023-01-24T19:11:03Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2142100
intvolume: ' 87'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Spatially periodic liquid crystal director field appearing in a photonic crystal
template
type: journal_article
user_id: '254'
volume: 87
year: '2005'
...
---
_id: '39767'
article_number: '241108'
author:
- first_name: G.
full_name: Mertens, G.
last_name: Mertens
- first_name: R. B.
full_name: Wehrspohn, R. B.
last_name: Wehrspohn
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: S.
full_name: Matthias, S.
last_name: Matthias
- first_name: C.
full_name: Jamois, C.
last_name: Jamois
- first_name: U.
full_name: Gösele, U.
last_name: Gösele
citation:
ama: Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable
defect mode in a three-dimensional photonic crystal. Applied Physics Letters.
2005;87(24). doi:10.1063/1.2139846
apa: Mertens, G., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., Jamois, C., &
Gösele, U. (2005). Tunable defect mode in a three-dimensional photonic crystal.
Applied Physics Letters, 87(24), Article 241108. https://doi.org/10.1063/1.2139846
bibtex: '@article{Mertens_Wehrspohn_Kitzerow_Matthias_Jamois_Gösele_2005, title={Tunable
defect mode in a three-dimensional photonic crystal}, volume={87}, DOI={10.1063/1.2139846},
number={24241108}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias,
S. and Jamois, C. and Gösele, U.}, year={2005} }'
chicago: Mertens, G., R. B. Wehrspohn, Heinz-Siegfried Kitzerow, S. Matthias, C.
Jamois, and U. Gösele. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2139846.
ieee: 'G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and
U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,” Applied
Physics Letters, vol. 87, no. 24, Art. no. 241108, 2005, doi: 10.1063/1.2139846.'
mla: Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.”
Applied Physics Letters, vol. 87, no. 24, 241108, AIP Publishing, 2005,
doi:10.1063/1.2139846.
short: G. Mertens, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, U. Gösele,
Applied Physics Letters 87 (2005).
date_created: 2023-01-24T19:12:37Z
date_updated: 2023-01-24T19:13:14Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.2139846
intvolume: ' 87'
issue: '24'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tunable defect mode in a three-dimensional photonic crystal
type: journal_article
user_id: '254'
volume: 87
year: '2005'
...
---
_id: '39768'
article_number: '031104'
author:
- first_name: Lutz
full_name: Paelke, Lutz
last_name: Paelke
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Peter
full_name: Strohriegl, Peter
last_name: Strohriegl
citation:
ama: Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid
crystal based on a photoconducting polysiloxane. Applied Physics Letters.
2005;86(3). doi:10.1063/1.1852082
apa: Paelke, L., Kitzerow, H.-S., & Strohriegl, P. (2005). Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters,
86(3), Article 031104. https://doi.org/10.1063/1.1852082
bibtex: '@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={10.1063/1.1852082}, number={3031104},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke,
Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }'
chicago: Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive
Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied
Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1852082.
ieee: 'L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed
liquid crystal based on a photoconducting polysiloxane,” Applied Physics Letters,
vol. 86, no. 3, Art. no. 031104, 2005, doi: 10.1063/1.1852082.'
mla: Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based
on a Photoconducting Polysiloxane.” Applied Physics Letters, vol. 86, no.
3, 031104, AIP Publishing, 2005, doi:10.1063/1.1852082.
short: L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T19:13:33Z
date_updated: 2023-01-24T19:13:50Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1852082
intvolume: ' 86'
issue: '3'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photorefractive polymer-dispersed liquid crystal based on a photoconducting
polysiloxane
type: journal_article
user_id: '254'
volume: 86
year: '2005'
...
---
_id: '23507'
abstract:
- lang: eng
text: "A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs
quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination.
The calculations show that, as long as good material quality can be achieved,
growing highly compressively strained samples is preferable due to their specific
band structure properties. Optimum laser operation is possible slightly above
a peak gain of 1000cm−1\r\n."
article_number: '261109'
author:
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: W. W.
full_name: Chow, W. W.
last_name: Chow
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: J. V.
full_name: Moloney, J. V.
last_name: Moloney
citation:
ama: Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of
(GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters.
2005;87(26). doi:10.1063/1.2149371
apa: Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader,
J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures
in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article
261109. https://doi.org/10.1063/1.2149371
bibtex: '@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005,
title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550
nm range}, volume={87}, DOI={10.1063/1.2149371},
number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier,
C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader,
J. and Moloney, J. V.}, year={2005} }'
chicago: Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow,
J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005).
https://doi.org/10.1063/1.2149371.
ieee: 'C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs)
heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol.
87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.'
mla: Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures
in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109,
2005, doi:10.1063/1.2149371.
short: C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader,
J.V. Moloney, Applied Physics Letters 87 (2005).
date_created: 2021-08-24T09:29:41Z
date_updated: 2023-04-24T06:00:23Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1063/1.2149371
extern: '1'
intvolume: ' 87'
issue: '26'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm
range
type: journal_article
user_id: '49063'
volume: 87
year: '2005'
...
---
_id: '39574'
article_number: '024104'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: J.
full_name: Hu, J.
last_name: Hu
- first_name: J.
full_name: Kanzow, J.
last_name: Kanzow
- first_name: K.
full_name: Rätzke, K.
last_name: Rätzke
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
- first_name: S.
full_name: Meyer, S.
last_name: Meyer
- first_name: J.
full_name: Pflaum, J.
last_name: Pflaum
citation:
ama: Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive
tool for the detection of metal penetration in molecular-based organic electronics.
Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845
apa: Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann,
C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements
as a sensitive tool for the detection of metal penetration in molecular-based
organic electronics. Applied Physics Letters, 86(2), Article 024104.
https://doi.org/10.1063/1.1849845
bibtex: '@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005,
title={Radiotracer measurements as a sensitive tool for the detection of metal
penetration in molecular-based organic electronics}, volume={86}, DOI={10.1063/1.1849845},
number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R.
and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum,
J.}, year={2005} }'
chicago: Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C.
Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements
as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based
Organic Electronics.” Applied Physics Letters 86, no. 2 (2005). https://doi.org/10.1063/1.1849845.
ieee: 'M. Scharnberg et al., “Radiotracer measurements as a sensitive tool
for the detection of metal penetration in molecular-based organic electronics,”
Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845.'
mla: Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the
Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied
Physics Letters, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:10.1063/1.1849845.
short: M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann,
U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005).
date_created: 2023-01-24T12:21:59Z
date_updated: 2023-03-22T10:34:05Z
department:
- _id: '59'
doi: 10.1063/1.1849845
intvolume: ' 86'
issue: '2'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Radiotracer measurements as a sensitive tool for the detection of metal penetration
in molecular-based organic electronics
type: journal_article
user_id: '20179'
volume: 86
year: '2005'
...
---
_id: '7678'
author:
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. R.
full_name: Stonas, A. R.
last_name: Stonas
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
citation:
ama: Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN
microdisk lasers fabricated by photoelectrochemical etching. Applied Physics
Letters. 2004;85(22):5179-5181. doi:10.1063/1.1829167
apa: Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars,
S. P., & Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching. Applied Physics Letters,
85(22), 5179–5181. https://doi.org/10.1063/1.1829167
bibtex: '@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing,
optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching}, volume={85}, DOI={10.1063/1.1829167},
number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer,
E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and
DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }'
chicago: 'Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S.
P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters
85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.'
ieee: E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk
lasers fabricated by photoelectrochemical etching,” Applied Physics Letters,
vol. 85, no. 22, pp. 5179–5181, 2004.
mla: Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk
Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters,
vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167.
short: E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars,
E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181.
date_created: 2019-02-13T14:47:45Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1829167
extern: '1'
intvolume: ' 85'
issue: '22'
language:
- iso: eng
page: 5179-5181
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical
etching
type: journal_article
user_id: '20798'
volume: 85
year: '2004'
...
---
_id: '8696'
author:
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
- first_name: A.
full_name: Yesayan, A.
last_name: Yesayan
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional
p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316
apa: Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly
graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315.
https://doi.org/10.1063/1.1736316
bibtex: '@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded
two-dimensional p–n junction}, DOI={10.1063/1.1736316},
journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter,
Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }'
chicago: Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly
Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15.
https://doi.org/10.1063/1.1736316.
ieee: S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded
two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315,
2004.
mla: Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied
Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316.
short: S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters
(2004) 3313–3315.
date_created: 2019-03-27T11:43:00Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1736316
language:
- iso: eng
page: 3313-3315
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: The linearly graded two-dimensional p–n junction
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '8711'
author:
- first_name: B.
full_name: Grbić, B.
last_name: Grbić
- first_name: C.
full_name: Ellenberger, C.
last_name: Ellenberger
- first_name: T.
full_name: Ihn, T.
last_name: Ihn
- first_name: K.
full_name: Ensslin, K.
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport
in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279.
doi:10.1063/1.1781750
apa: Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck,
A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied
Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750
bibtex: '@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport
in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750},
journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn,
T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279}
}'
chicago: Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck.
“Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters,
2004, 2277–79. https://doi.org/10.1063/1.1781750.
ieee: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck,
“Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters,
pp. 2277–2279, 2004.
mla: Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied
Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750.
short: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied
Physics Letters (2004) 2277–2279.
date_created: 2019-03-27T12:21:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1781750
language:
- iso: eng
page: 2277-2279
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetotransport in C-doped AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '23514'
abstract:
- lang: eng
text: A theory is presented which couples a dynamical laser model to a fully microscopic
calculation of scattering effects. Calculations for two optically pumped GaInNAs
laser structures show how this approach can be used to analyze nonequilibrium
and dynamical laser properties over a wide range of system parameters.
author:
- first_name: A.
full_name: Thränhardt, A.
last_name: Thränhardt
- first_name: S.
full_name: Becker, S.
last_name: Becker
- first_name: C.
full_name: Schlichenmaier, C.
last_name: Schlichenmaier
- first_name: I.
full_name: Kuznetsova, I.
last_name: Kuznetsova
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: S. W.
full_name: Koch, S. W.
last_name: Koch
- first_name: J.
full_name: Hader, J.
last_name: Hader
- first_name: J. V.
full_name: Moloney, J. V.
last_name: Moloney
- first_name: W. W.
full_name: Chow, W. W.
last_name: Chow
citation:
ama: Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically
pumped GaInNAs laser structures. Applied Physics Letters. 2004;85(23):5526-5528.
doi:10.1063/1.1831570
apa: Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T.,
Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2004). Nonequilibrium
gain in optically pumped GaInNAs laser structures. Applied Physics Letters,
85(23), 5526–5528. https://doi.org/10.1063/1.1831570
bibtex: '@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004,
title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85},
DOI={10.1063/1.1831570}, number={23},
journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier,
C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney,
J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }'
chicago: 'Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier,
S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically
Pumped GaInNAs Laser Structures.” Applied Physics Letters 85, no. 23 (2004):
5526–28. https://doi.org/10.1063/1.1831570.'
ieee: 'A. Thränhardt et al., “Nonequilibrium gain in optically pumped GaInNAs
laser structures,” Applied Physics Letters, vol. 85, no. 23, pp. 5526–5528,
2004, doi: 10.1063/1.1831570.'
mla: Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser
Structures.” Applied Physics Letters, vol. 85, no. 23, 2004, pp. 5526–28,
doi:10.1063/1.1831570.
short: A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W.
Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528.
date_created: 2021-08-24T09:46:22Z
date_updated: 2023-04-24T06:23:26Z
department:
- _id: '15'
- _id: '170'
- _id: '293'
doi: 10.1063/1.1831570
extern: '1'
intvolume: ' 85'
issue: '23'
language:
- iso: eng
page: 5526-5528
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Nonequilibrium gain in optically pumped GaInNAs laser structures
type: journal_article
user_id: '49063'
volume: 85
year: '2004'
...
---
_id: '7683'
author:
- first_name: D.
full_name: Reuter, D.
last_name: Reuter
- first_name: C.
full_name: Riedesel, C.
last_name: Riedesel
- first_name: P.
full_name: Schafmeister, P.
last_name: Schafmeister
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Riedesel C, Schafmeister P, Meier C, Wieck AD. Fabrication of high-quality
two-dimensional electron gases by overgrowth of focused-ion-beam-doped AlxGa1−xAs.
Applied Physics Letters. 2003;82(3):481-483. doi:10.1063/1.1539925
apa: Reuter, D., Riedesel, C., Schafmeister, P., Meier, C., & Wieck, A. D. (2003).
Fabrication of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs. Applied Physics Letters, 82(3), 481–483. https://doi.org/10.1063/1.1539925
bibtex: '@article{Reuter_Riedesel_Schafmeister_Meier_Wieck_2003, title={Fabrication
of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs}, volume={82}, DOI={10.1063/1.1539925},
number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reuter,
D. and Riedesel, C. and Schafmeister, P. and Meier, Cedrik and Wieck, A. D.},
year={2003}, pages={481–483} }'
chicago: 'Reuter, D., C. Riedesel, P. Schafmeister, Cedrik Meier, and A. D. Wieck.
“Fabrication of High-Quality Two-Dimensional Electron Gases by Overgrowth of Focused-Ion-Beam-Doped
AlxGa1−xAs.” Applied Physics Letters 82, no. 3 (2003): 481–83. https://doi.org/10.1063/1.1539925.'
ieee: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, and A. D. Wieck, “Fabrication
of high-quality two-dimensional electron gases by overgrowth of focused-ion-beam-doped
AlxGa1−xAs,” Applied Physics Letters, vol. 82, no. 3, pp. 481–483, 2003.
mla: Reuter, D., et al. “Fabrication of High-Quality Two-Dimensional Electron Gases
by Overgrowth of Focused-Ion-Beam-Doped AlxGa1−xAs.” Applied Physics Letters,
vol. 82, no. 3, AIP Publishing, 2003, pp. 481–83, doi:10.1063/1.1539925.
short: D. Reuter, C. Riedesel, P. Schafmeister, C. Meier, A.D. Wieck, Applied Physics
Letters 82 (2003) 481–483.
date_created: 2019-02-13T14:51:34Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1539925
extern: '1'
intvolume: ' 82'
issue: '3'
language:
- iso: eng
page: 481-483
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Fabrication of high-quality two-dimensional electron gases by overgrowth of
focused-ion-beam-doped AlxGa1−xAs
type: journal_article
user_id: '20798'
volume: 82
year: '2003'
...
---
_id: '8723'
author:
- first_name: B. Roldan
full_name: Cuenya, B. Roldan
last_name: Cuenya
- first_name: M.
full_name: Doi, M.
last_name: Doi
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: S.
full_name: Hoch, S.
last_name: Hoch
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: T.
full_name: Schmitte, T.
last_name: Schmitte
- first_name: H.
full_name: Zabel, H.
last_name: Zabel
citation:
ama: Cuenya BR, Doi M, Keune W, et al. Magnetism and interface properties of epitaxial
Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas
heterostructures. Applied Physics Letters. 2003:1072-1074. doi:10.1063/1.1542934
apa: Cuenya, B. R., Doi, M., Keune, W., Hoch, S., Reuter, D., Wieck, A., … Zabel,
H. (2003). Magnetism and interface properties of epitaxial Fe films on high-mobility
GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas heterostructures. Applied
Physics Letters, 1072–1074. https://doi.org/10.1063/1.1542934
bibtex: '@article{Cuenya_Doi_Keune_Hoch_Reuter_Wieck_Schmitte_Zabel_2003, title={Magnetism
and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001)
two-dimensional electron gas heterostructures}, DOI={10.1063/1.1542934},
journal={Applied Physics Letters}, author={Cuenya, B. Roldan and Doi, M. and Keune,
W. and Hoch, S. and Reuter, Dirk and Wieck, A. and Schmitte, T. and Zabel, H.},
year={2003}, pages={1072–1074} }'
chicago: Cuenya, B. Roldan, M. Doi, W. Keune, S. Hoch, Dirk Reuter, A. Wieck, T.
Schmitte, and H. Zabel. “Magnetism and Interface Properties of Epitaxial Fe Films
on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas Heterostructures.”
Applied Physics Letters, 2003, 1072–74. https://doi.org/10.1063/1.1542934.
ieee: B. R. Cuenya et al., “Magnetism and interface properties of epitaxial
Fe films on high-mobility GaAs/Al0.35Ga0.65As(001) two-dimensional electron gas
heterostructures,” Applied Physics Letters, pp. 1072–1074, 2003.
mla: Cuenya, B. Roldan, et al. “Magnetism and Interface Properties of Epitaxial
Fe Films on High-Mobility GaAs/Al0.35Ga0.65As(001) Two-Dimensional Electron Gas
Heterostructures.” Applied Physics Letters, 2003, pp. 1072–74, doi:10.1063/1.1542934.
short: B.R. Cuenya, M. Doi, W. Keune, S. Hoch, D. Reuter, A. Wieck, T. Schmitte,
H. Zabel, Applied Physics Letters (2003) 1072–1074.
date_created: 2019-03-28T14:59:02Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1542934
language:
- iso: eng
page: 1072-1074
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetism and interface properties of epitaxial Fe films on high-mobility GaAs/Al0.35Ga0.65As(001)
two-dimensional electron gas heterostructures
type: journal_article
user_id: '42514'
year: '2003'
...
---
_id: '4288'
abstract:
- lang: eng
text: "We report the experimental observation and the theoretical modeling of self-induced-transparency\r\nsignatures
such as nonlinear transmission, pulse retardation and reshaping, for subpicosecond
pulse\r\npropagation in a 2-mm-long InGaAs quantum-dot ridge waveguide in resonance
with the excitonic\r\nground-state transition at 10 K. The measurements were obtained
by using a cross-correlation\r\nfrequency-resolved optical gating technique which
allows us to retrieve the field amplitude of the\r\npropagating pulses."
article_type: original
author:
- first_name: S.
full_name: Schneider, S.
last_name: Schneider
- first_name: P.
full_name: Borri, P.
last_name: Borri
- first_name: W.
full_name: Langbein, W.
last_name: Langbein
- first_name: U.
full_name: Woggon, U.
last_name: Woggon
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: A.
full_name: Knorr, A.
last_name: Knorr
- first_name: R. L.
full_name: Sellin, R. L.
last_name: Sellin
- first_name: D.
full_name: Ouyang, D.
last_name: Ouyang
- first_name: D.
full_name: Bimberg, D.
last_name: Bimberg
citation:
ama: Schneider S, Borri P, Langbein W, et al. Self-induced transparency in InGaAs
quantum-dot waveguides. Applied Physics Letters. 2003;83(18):3668-3670.
doi:10.1063/1.1624492
apa: Schneider, S., Borri, P., Langbein, W., Woggon, U., Förstner, J., Knorr, A.,
… Bimberg, D. (2003). Self-induced transparency in InGaAs quantum-dot waveguides.
Applied Physics Letters, 83(18), 3668–3670. https://doi.org/10.1063/1.1624492
bibtex: '@article{Schneider_Borri_Langbein_Woggon_Förstner_Knorr_Sellin_Ouyang_Bimberg_2003,
title={Self-induced transparency in InGaAs quantum-dot waveguides}, volume={83},
DOI={10.1063/1.1624492}, number={18},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schneider,
S. and Borri, P. and Langbein, W. and Woggon, U. and Förstner, Jens and Knorr,
A. and Sellin, R. L. and Ouyang, D. and Bimberg, D.}, year={2003}, pages={3668–3670}
}'
chicago: 'Schneider, S., P. Borri, W. Langbein, U. Woggon, Jens Förstner, A. Knorr,
R. L. Sellin, D. Ouyang, and D. Bimberg. “Self-Induced Transparency in InGaAs
Quantum-Dot Waveguides.” Applied Physics Letters 83, no. 18 (2003): 3668–70.
https://doi.org/10.1063/1.1624492.'
ieee: S. Schneider et al., “Self-induced transparency in InGaAs quantum-dot
waveguides,” Applied Physics Letters, vol. 83, no. 18, pp. 3668–3670, 2003.
mla: Schneider, S., et al. “Self-Induced Transparency in InGaAs Quantum-Dot Waveguides.”
Applied Physics Letters, vol. 83, no. 18, AIP Publishing, 2003, pp. 3668–70,
doi:10.1063/1.1624492.
short: S. Schneider, P. Borri, W. Langbein, U. Woggon, J. Förstner, A. Knorr, R.L.
Sellin, D. Ouyang, D. Bimberg, Applied Physics Letters 83 (2003) 3668–3670.
date_created: 2018-08-30T07:41:02Z
date_updated: 2022-01-06T07:00:48Z
ddc:
- '530'
doi: 10.1063/1.1624492
extern: '1'
file:
- access_level: open_access
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-30T07:41:50Z
date_updated: 2018-09-05T06:50:15Z
file_id: '4289'
file_name: 2003 Schneider et al_Self-induced transparency in InGaAs quantum-dot
waveguides.pdf
file_size: 55291
relation: main_file
file_date_updated: 2018-09-05T06:50:15Z
has_accepted_license: '1'
intvolume: ' 83'
issue: '18'
keyword:
- tet_topic_qd
language:
- iso: eng
oa: '1'
page: 3668-3670
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Self-induced transparency in InGaAs quantum-dot waveguides
type: journal_article
urn: '42888'
user_id: '158'
volume: 83
year: '2003'
...
---
_id: '39776'
author:
- first_name: Guido
full_name: Mertens, Guido
last_name: Mertens
- first_name: Thorsten
full_name: Röder, Thorsten
last_name: Röder
- first_name: Heinrich
full_name: Matthias, Heinrich
last_name: Matthias
- first_name: Heinrich
full_name: Marsmann, Heinrich
last_name: Marsmann
- first_name: Heinz-Siegfried
full_name: Kitzerow, Heinz-Siegfried
id: '254'
last_name: Kitzerow
- first_name: Stefan L.
full_name: Schweizer, Stefan L.
last_name: Schweizer
- first_name: Cecile
full_name: Jamois, Cecile
last_name: Jamois
- first_name: Ralf B.
full_name: Wehrspohn, Ralf B.
last_name: Wehrspohn
- first_name: Mary
full_name: Neubert, Mary
last_name: Neubert
citation:
ama: Mertens G, Röder T, Matthias H, et al. Two- and three-dimensional photonic
crystals made of macroporous silicon and liquid crystals. Applied Physics Letters.
2003;83(15):3036-3038. doi:10.1063/1.1614000
apa: Mertens, G., Röder, T., Matthias, H., Marsmann, H., Kitzerow, H.-S., Schweizer,
S. L., Jamois, C., Wehrspohn, R. B., & Neubert, M. (2003). Two- and three-dimensional
photonic crystals made of macroporous silicon and liquid crystals. Applied
Physics Letters, 83(15), 3036–3038. https://doi.org/10.1063/1.1614000
bibtex: '@article{Mertens_Röder_Matthias_Marsmann_Kitzerow_Schweizer_Jamois_Wehrspohn_Neubert_2003,
title={Two- and three-dimensional photonic crystals made of macroporous silicon
and liquid crystals}, volume={83}, DOI={10.1063/1.1614000},
number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens,
Guido and Röder, Thorsten and Matthias, Heinrich and Marsmann, Heinrich and Kitzerow,
Heinz-Siegfried and Schweizer, Stefan L. and Jamois, Cecile and Wehrspohn, Ralf
B. and Neubert, Mary}, year={2003}, pages={3036–3038} }'
chicago: 'Mertens, Guido, Thorsten Röder, Heinrich Matthias, Heinrich Marsmann,
Heinz-Siegfried Kitzerow, Stefan L. Schweizer, Cecile Jamois, Ralf B. Wehrspohn,
and Mary Neubert. “Two- and Three-Dimensional Photonic Crystals Made of Macroporous
Silicon and Liquid Crystals.” Applied Physics Letters 83, no. 15 (2003):
3036–38. https://doi.org/10.1063/1.1614000.'
ieee: 'G. Mertens et al., “Two- and three-dimensional photonic crystals made
of macroporous silicon and liquid crystals,” Applied Physics Letters, vol.
83, no. 15, pp. 3036–3038, 2003, doi: 10.1063/1.1614000.'
mla: Mertens, Guido, et al. “Two- and Three-Dimensional Photonic Crystals Made of
Macroporous Silicon and Liquid Crystals.” Applied Physics Letters, vol.
83, no. 15, AIP Publishing, 2003, pp. 3036–38, doi:10.1063/1.1614000.
short: G. Mertens, T. Röder, H. Matthias, H. Marsmann, H.-S. Kitzerow, S.L. Schweizer,
C. Jamois, R.B. Wehrspohn, M. Neubert, Applied Physics Letters 83 (2003) 3036–3038.
date_created: 2023-01-24T19:19:36Z
date_updated: 2023-01-24T19:20:20Z
department:
- _id: '313'
- _id: '638'
doi: 10.1063/1.1614000
intvolume: ' 83'
issue: '15'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
page: 3036-3038
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Two- and three-dimensional photonic crystals made of macroporous silicon and
liquid crystals
type: journal_article
user_id: '254'
volume: 83
year: '2003'
...
---
_id: '1745'
author:
- first_name: T.
full_name: Pertsch, T.
last_name: Pertsch
- first_name: Thomas
full_name: Zentgraf, Thomas
id: '30525'
last_name: Zentgraf
orcid: 0000-0002-8662-1101
- first_name: U.
full_name: Peschel, U.
last_name: Peschel
- first_name: A.
full_name: Bräuer, A.
last_name: Bräuer
- first_name: F.
full_name: Lederer, F.
last_name: Lederer
citation:
ama: Pertsch T, Zentgraf T, Peschel U, Bräuer A, Lederer F. Beam steering in waveguide
arrays. Applied Physics Letters. 2002;80(18):3247-3249. doi:10.1063/1.1476720
apa: Pertsch, T., Zentgraf, T., Peschel, U., Bräuer, A., & Lederer, F. (2002).
Beam steering in waveguide arrays. Applied Physics Letters, 80(18),
3247–3249. https://doi.org/10.1063/1.1476720
bibtex: '@article{Pertsch_Zentgraf_Peschel_Bräuer_Lederer_2002, title={Beam steering
in waveguide arrays}, volume={80}, DOI={10.1063/1.1476720},
number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pertsch,
T. and Zentgraf, Thomas and Peschel, U. and Bräuer, A. and Lederer, F.}, year={2002},
pages={3247–3249} }'
chicago: 'Pertsch, T., Thomas Zentgraf, U. Peschel, A. Bräuer, and F. Lederer. “Beam
Steering in Waveguide Arrays.” Applied Physics Letters 80, no. 18 (2002):
3247–49. https://doi.org/10.1063/1.1476720.'
ieee: T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, and F. Lederer, “Beam steering
in waveguide arrays,” Applied Physics Letters, vol. 80, no. 18, pp. 3247–3249,
2002.
mla: Pertsch, T., et al. “Beam Steering in Waveguide Arrays.” Applied Physics
Letters, vol. 80, no. 18, AIP Publishing, 2002, pp. 3247–49, doi:10.1063/1.1476720.
short: T. Pertsch, T. Zentgraf, U. Peschel, A. Bräuer, F. Lederer, Applied Physics
Letters 80 (2002) 3247–3249.
date_created: 2018-03-23T12:54:43Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1476720
intvolume: ' 80'
issue: '18'
page: 3247-3249
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Beam steering in waveguide arrays
type: journal_article
user_id: '30525'
volume: 80
year: '2002'
...
---
_id: '8731'
author:
- first_name: S. F.
full_name: Fischer, S. F.
last_name: Fischer
- first_name: G.
full_name: Apetrii, G.
last_name: Apetrii
- first_name: S.
full_name: Skaberna, S.
last_name: Skaberna
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Fischer SF, Apetrii G, Skaberna S, Kunze U, Reuter D, Wieck AD. Control of
the confining potential in ballistic constrictions using a persistent charging
effect. Applied Physics Letters. 2002:2779-2781. doi:10.1063/1.1511278
apa: Fischer, S. F., Apetrii, G., Skaberna, S., Kunze, U., Reuter, D., & Wieck,
A. D. (2002). Control of the confining potential in ballistic constrictions using
a persistent charging effect. Applied Physics Letters, 2779–2781. https://doi.org/10.1063/1.1511278
bibtex: '@article{Fischer_Apetrii_Skaberna_Kunze_Reuter_Wieck_2002, title={Control
of the confining potential in ballistic constrictions using a persistent charging
effect}, DOI={10.1063/1.1511278},
journal={Applied Physics Letters}, author={Fischer, S. F. and Apetrii, G. and
Skaberna, S. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2779–2781}
}'
chicago: Fischer, S. F., G. Apetrii, S. Skaberna, U. Kunze, Dirk Reuter, and A.
D. Wieck. “Control of the Confining Potential in Ballistic Constrictions Using
a Persistent Charging Effect.” Applied Physics Letters, 2002, 2779–81.
https://doi.org/10.1063/1.1511278.
ieee: S. F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, and A. D. Wieck,
“Control of the confining potential in ballistic constrictions using a persistent
charging effect,” Applied Physics Letters, pp. 2779–2781, 2002.
mla: Fischer, S. F., et al. “Control of the Confining Potential in Ballistic Constrictions
Using a Persistent Charging Effect.” Applied Physics Letters, 2002, pp.
2779–81, doi:10.1063/1.1511278.
short: S.F. Fischer, G. Apetrii, S. Skaberna, U. Kunze, D. Reuter, A.D. Wieck, Applied
Physics Letters (2002) 2779–2781.
date_created: 2019-03-28T15:08:27Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1511278
language:
- iso: eng
page: 2779-2781
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Control of the confining potential in ballistic constrictions using a persistent
charging effect
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8736'
author:
- first_name: J.
full_name: Regul, J.
last_name: Regul
- first_name: U. F.
full_name: Keyser, U. F.
last_name: Keyser
- first_name: M.
full_name: Paesler, M.
last_name: Paesler
- first_name: F.
full_name: Hohls, F.
last_name: Hohls
- first_name: U.
full_name: Zeitler, U.
last_name: Zeitler
- first_name: R. J.
full_name: Haug, R. J.
last_name: Haug
- first_name: A.
full_name: Malavé, A.
last_name: Malavé
- first_name: E.
full_name: Oesterschulze, E.
last_name: Oesterschulze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Regul J, Keyser UF, Paesler M, et al. Fabrication of quantum point contacts
by engraving GaAs/AlGaAs heterostructures with a diamond tip. Applied Physics
Letters. 2002:2023-2025. doi:10.1063/1.1506417
apa: Regul, J., Keyser, U. F., Paesler, M., Hohls, F., Zeitler, U., Haug, R. J.,
… Wieck, A. D. (2002). Fabrication of quantum point contacts by engraving GaAs/AlGaAs
heterostructures with a diamond tip. Applied Physics Letters, 2023–2025.
https://doi.org/10.1063/1.1506417
bibtex: '@article{Regul_Keyser_Paesler_Hohls_Zeitler_Haug_Malavé_Oesterschulze_Reuter_Wieck_2002,
title={Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures
with a diamond tip}, DOI={10.1063/1.1506417},
journal={Applied Physics Letters}, author={Regul, J. and Keyser, U. F. and Paesler,
M. and Hohls, F. and Zeitler, U. and Haug, R. J. and Malavé, A. and Oesterschulze,
E. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={2023–2025} }'
chicago: Regul, J., U. F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R. J. Haug,
A. Malavé, E. Oesterschulze, Dirk Reuter, and A. D. Wieck. “Fabrication of Quantum
Point Contacts by Engraving GaAs/AlGaAs Heterostructures with a Diamond Tip.”
Applied Physics Letters, 2002, 2023–25. https://doi.org/10.1063/1.1506417.
ieee: J. Regul et al., “Fabrication of quantum point contacts by engraving
GaAs/AlGaAs heterostructures with a diamond tip,” Applied Physics Letters,
pp. 2023–2025, 2002.
mla: Regul, J., et al. “Fabrication of Quantum Point Contacts by Engraving GaAs/AlGaAs
Heterostructures with a Diamond Tip.” Applied Physics Letters, 2002, pp.
2023–25, doi:10.1063/1.1506417.
short: J. Regul, U.F. Keyser, M. Paesler, F. Hohls, U. Zeitler, R.J. Haug, A. Malavé,
E. Oesterschulze, D. Reuter, A.D. Wieck, Applied Physics Letters (2002) 2023–2025.
date_created: 2019-03-28T15:13:44Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1506417
language:
- iso: eng
page: 2023-2025
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures
with a diamond tip
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8740'
author:
- first_name: M. R.
full_name: Schaapman, M. R.
last_name: Schaapman
- first_name: P. C. M.
full_name: Christianen, P. C. M.
last_name: Christianen
- first_name: J. C.
full_name: Maan, J. C.
last_name: Maan
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose
torsional magnetometer with optical detection. Applied Physics Letters.
2002:1041-1043. doi:10.1063/1.1498152
apa: Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., & Wieck,
A. D. (2002). A multipurpose torsional magnetometer with optical detection. Applied
Physics Letters, 1041–1043. https://doi.org/10.1063/1.1498152
bibtex: '@article{Schaapman_Christianen_Maan_Reuter_Wieck_2002, title={A multipurpose
torsional magnetometer with optical detection}, DOI={10.1063/1.1498152},
journal={Applied Physics Letters}, author={Schaapman, M. R. and Christianen, P.
C. M. and Maan, J. C. and Reuter, Dirk and Wieck, A. D.}, year={2002}, pages={1041–1043}
}'
chicago: Schaapman, M. R., P. C. M. Christianen, J. C. Maan, Dirk Reuter, and A.
D. Wieck. “A Multipurpose Torsional Magnetometer with Optical Detection.” Applied
Physics Letters, 2002, 1041–43. https://doi.org/10.1063/1.1498152.
ieee: M. R. Schaapman, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck,
“A multipurpose torsional magnetometer with optical detection,” Applied Physics
Letters, pp. 1041–1043, 2002.
mla: Schaapman, M. R., et al. “A Multipurpose Torsional Magnetometer with Optical
Detection.” Applied Physics Letters, 2002, pp. 1041–43, doi:10.1063/1.1498152.
short: M.R. Schaapman, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Applied
Physics Letters (2002) 1041–1043.
date_created: 2019-03-28T15:17:30Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1498152
language:
- iso: eng
page: 1041-1043
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: A multipurpose torsional magnetometer with optical detection
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8746'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Meier, C.
last_name: Meier
- first_name: M. A. Serrano
full_name: Álvarez, M. A. Serrano
last_name: Álvarez
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively
doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics
Letters. 2002:377-379. doi:10.1063/1.1386618
apa: Reuter, D., Meier, C., Álvarez, M. A. S., & Wieck, A. D. (2002). Increased
thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices.
Applied Physics Letters, 377–379. https://doi.org/10.1063/1.1386618
bibtex: '@article{Reuter_Meier_Álvarez_Wieck_2002, title={Increased thermal budget
for selectively doped heterostructures by employing AlAs/GaAs superlattices},
DOI={10.1063/1.1386618}, journal={Applied
Physics Letters}, author={Reuter, Dirk and Meier, C. and Álvarez, M. A. Serrano
and Wieck, A. D.}, year={2002}, pages={377–379} }'
chicago: Reuter, Dirk, C. Meier, M. A. Serrano Álvarez, and A. D. Wieck. “Increased
Thermal Budget for Selectively Doped Heterostructures by Employing AlAs/GaAs Superlattices.”
Applied Physics Letters, 2002, 377–79. https://doi.org/10.1063/1.1386618.
ieee: D. Reuter, C. Meier, M. A. S. Álvarez, and A. D. Wieck, “Increased thermal
budget for selectively doped heterostructures by employing AlAs/GaAs superlattices,”
Applied Physics Letters, pp. 377–379, 2002.
mla: Reuter, Dirk, et al. “Increased Thermal Budget for Selectively Doped Heterostructures
by Employing AlAs/GaAs Superlattices.” Applied Physics Letters, 2002, pp.
377–79, doi:10.1063/1.1386618.
short: D. Reuter, C. Meier, M.A.S. Álvarez, A.D. Wieck, Applied Physics Letters
(2002) 377–379.
date_created: 2019-03-29T11:23:32Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1386618
language:
- iso: eng
page: 377-379
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Increased thermal budget for selectively doped heterostructures by employing
AlAs/GaAs superlattices
type: journal_article
user_id: '42514'
year: '2002'
...