--- _id: '7975' article_number: '033111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445 apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445 bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445. ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010. mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445. short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010). date_created: 2019-02-21T13:32:39Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3293445 intvolume: ' 96' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy type: journal_article user_id: '42514' volume: 96 year: '2010' ... --- _id: '7980' article_number: '033111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445 apa: Lei, W., Notthoff, C., Lorke, A., Reuter, D., & Wieck, A. D. (2010). Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters, 96(3). https://doi.org/10.1063/1.3293445 bibtex: '@article{Lei_Notthoff_Lorke_Reuter_Wieck_2010, title={Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy}, volume={96}, DOI={10.1063/1.3293445}, number={3033111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Notthoff, C. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Lei, W., C. Notthoff, A. Lorke, Dirk Reuter, and A. D. Wieck. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters 96, no. 3 (2010). https://doi.org/10.1063/1.3293445. ieee: W. Lei, C. Notthoff, A. Lorke, D. Reuter, and A. D. Wieck, “Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy,” Applied Physics Letters, vol. 96, no. 3, 2010. mla: Lei, W., et al. “Electronic Structure of Self-Assembled InGaAs/GaAs Quantum Rings Studied by Capacitance-Voltage Spectroscopy.” Applied Physics Letters, vol. 96, no. 3, 033111, AIP Publishing, 2010, doi:10.1063/1.3293445. short: W. Lei, C. Notthoff, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 96 (2010). date_created: 2019-02-21T14:13:43Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3293445 intvolume: ' 96' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy type: journal_article user_id: '42514' volume: 96 year: '2010' ... --- _id: '7982' article_number: '022110' author: - first_name: M. full_name: Csontos, M. last_name: Csontos - first_name: Y. full_name: Komijani, Y. last_name: Komijani - first_name: I. full_name: Shorubalko, I. last_name: Shorubalko - first_name: K. full_name: Ensslin, K. last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2). doi:10.1063/1.3463465 apa: Csontos, M., Komijani, Y., Shorubalko, I., Ensslin, K., Reuter, D., & Wieck, A. D. (2010). Nanostructures in p-GaAs with improved tunability. Applied Physics Letters, 97(2). https://doi.org/10.1063/1.3463465 bibtex: '@article{Csontos_Komijani_Shorubalko_Ensslin_Reuter_Wieck_2010, title={Nanostructures in p-GaAs with improved tunability}, volume={97}, DOI={10.1063/1.3463465}, number={2022110}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Csontos, M. and Komijani, Y. and Shorubalko, I. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Csontos, M., Y. Komijani, I. Shorubalko, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters 97, no. 2 (2010). https://doi.org/10.1063/1.3463465. ieee: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, and A. D. Wieck, “Nanostructures in p-GaAs with improved tunability,” Applied Physics Letters, vol. 97, no. 2, 2010. mla: Csontos, M., et al. “Nanostructures in P-GaAs with Improved Tunability.” Applied Physics Letters, vol. 97, no. 2, 022110, AIP Publishing, 2010, doi:10.1063/1.3463465. short: M. Csontos, Y. Komijani, I. Shorubalko, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:33:40Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3463465 intvolume: ' 97' issue: '2' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nanostructures in p-GaAs with improved tunability type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '7983' article_number: '062112' author: - first_name: M. full_name: Wiemann, M. last_name: Wiemann - first_name: U. full_name: Wieser, U. last_name: Wieser - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922 apa: Wiemann, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2010). Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters, 97(6). https://doi.org/10.1063/1.3475922 bibtex: '@article{Wiemann_Wieser_Kunze_Reuter_Wieck_2010, title={Full-wave rectification based upon hot-electron thermopower}, volume={97}, DOI={10.1063/1.3475922}, number={6062112}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wiemann, M. and Wieser, U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2010} }' chicago: Wiemann, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters 97, no. 6 (2010). https://doi.org/10.1063/1.3475922. ieee: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Full-wave rectification based upon hot-electron thermopower,” Applied Physics Letters, vol. 97, no. 6, 2010. mla: Wiemann, M., et al. “Full-Wave Rectification Based upon Hot-Electron Thermopower.” Applied Physics Letters, vol. 97, no. 6, 062112, AIP Publishing, 2010, doi:10.1063/1.3475922. short: M. Wiemann, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:34:50Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3475922 intvolume: ' 97' issue: '6' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Full-wave rectification based upon hot-electron thermopower type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '7990' article_number: '143101' author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Michaelis de Vasconcellos, S. last_name: Michaelis de Vasconcellos - first_name: A. full_name: Zrenner, A. last_name: Zrenner - first_name: C. full_name: Meier, C. last_name: Meier citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, A. and Meier, C.}, year={2010} }' chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812. ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010. mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010). date_created: 2019-02-21T14:41:19Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3488812 intvolume: ' 97' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode type: journal_article user_id: '42514' volume: 97 year: '2010' ... --- _id: '4550' abstract: - lang: eng text: We have integrated individual (In,Ga)As quantum dots (QDs) using site-controlled molecular beam epitaxial growth into the intrinsic region of a p-i-n junction diode. This is achieved using an in situ combination of focused ion beam prepatterning, annealing, and overgrowth, resulting in arrays of individually electrically addressable (In,Ga)As QDs with full control on the lateral position. Using microelectroluminescence spectroscopy we demonstrate that these QDs have the same optical quality as optically pumped Stranski–Krastanov QDs with random nucleation located in proximity to a doped interface. The results suggest that this technique is scalable and highly interesting for different applications in quantum devices. article_number: '143101' article_type: original author: - first_name: M. full_name: Mehta, M. last_name: Mehta - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Michaelis de Vasconcellos, S. last_name: Michaelis de Vasconcellos - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812 apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., & Meier, C. (2010). An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters, 97(14). https://doi.org/10.1063/1.3488812 bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2010, title={An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode}, volume={97}, DOI={10.1063/1.3488812}, number={14143101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mehta, M. and Reuter, Dirk and Wieck, A. D. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Meier, Cedrik}, year={2010} }' chicago: Mehta, M., Dirk Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters 97, no. 14 (2010). https://doi.org/10.1063/1.3488812. ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode,” Applied Physics Letters, vol. 97, no. 14, 2010. mla: Mehta, M., et al. “An Intentionally Positioned (In,Ga)As Quantum Dot in a Micron Sized Light Emitting Diode.” Applied Physics Letters, vol. 97, no. 14, 143101, AIP Publishing, 2010, doi:10.1063/1.3488812. short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Applied Physics Letters 97 (2010). date_created: 2018-09-20T12:38:51Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' - _id: '287' doi: 10.1063/1.3488812 intvolume: ' 97' issue: '14' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode type: journal_article user_id: '20798' volume: 97 year: '2010' ... --- _id: '4194' abstract: - lang: eng text: A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with V_th=0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements. article_number: '253501' article_type: original author: - first_name: E. full_name: Tschumak, E. last_name: Tschumak - first_name: R. full_name: Granzner, R. last_name: Granzner - first_name: Jörg full_name: Lindner, Jörg id: '20797' last_name: Lindner - first_name: F. full_name: Schwierz, F. last_name: Schwierz - first_name: K. full_name: Lischka, K. last_name: Lischka - first_name: H. full_name: Nagasawa, H. last_name: Nagasawa - first_name: M. full_name: Abe, M. last_name: Abe - first_name: Donald full_name: As, Donald last_name: As citation: ama: Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066 apa: Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H., … As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25). https://doi.org/10.1063/1.3455066 bibtex: '@article{Tschumak_Granzner_Lindner_Schwierz_Lischka_Nagasawa_Abe_As_2010, title={Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)}, volume={96}, DOI={10.1063/1.3455066}, number={25253501}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tschumak, E. and Granzner, R. and Lindner, Jörg and Schwierz, F. and Lischka, K. and Nagasawa, H. and Abe, M. and As, Donald}, year={2010} }' chicago: Tschumak, E., R. Granzner, Jörg Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and Donald As. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters 96, no. 25 (2010). https://doi.org/10.1063/1.3455066. ieee: E. Tschumak et al., “Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001),” Applied Physics Letters, vol. 96, no. 25, 2010. mla: Tschumak, E., et al. “Nonpolar Cubic AlGaN/GaN Heterojunction Field-Effect Transistor on Ar+ Implanted 3C–SiC (001).” Applied Physics Letters, vol. 96, no. 25, 253501, AIP Publishing, 2010, doi:10.1063/1.3455066. short: E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010). date_created: 2018-08-28T11:56:08Z date_updated: 2022-01-06T07:00:33Z ddc: - '530' department: - _id: '15' - _id: '286' doi: 10.1063/1.3455066 file: - access_level: closed content_type: application/pdf creator: hclaudia date_created: 2018-08-28T11:58:27Z date_updated: 2018-08-28T11:58:27Z file_id: '4195' file_name: Non-polar cubic AlGaN-GaN HFET on Ar+ implanted 3C-SiC 001.pdf file_size: 277385 relation: main_file success: 1 file_date_updated: 2018-08-28T11:58:27Z has_accepted_license: '1' intvolume: ' 96' issue: '25' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001) type: journal_article user_id: '55706' volume: 96 year: '2010' ... --- _id: '7973' article_number: '022107' author: - first_name: S. S. full_name: Buchholz, S. S. last_name: Buchholz - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009;94(2). doi:10.1063/1.3069281 apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters, 94(2). https://doi.org/10.1063/1.3069281 bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, volume={94}, DOI={10.1063/1.3069281}, number={2022107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters 94, no. 2 (2009). https://doi.org/10.1063/1.3069281. ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, vol. 94, no. 2, 2009. mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, vol. 94, no. 2, 022107, AIP Publishing, 2009, doi:10.1063/1.3069281. short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters 94 (2009). date_created: 2019-02-21T13:28:29Z date_updated: 2022-01-06T07:03:48Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3069281 intvolume: ' 94' issue: '2' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring type: journal_article user_id: '42514' volume: 94 year: '2009' ... --- _id: '8579' article_number: '022107' author: - first_name: S. S. full_name: Buchholz, S. S. last_name: Buchholz - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Buchholz SS, Fischer SF, Kunze U, Reuter D, Wieck AD. Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. 2009. doi:10.1063/1.3069281 apa: Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., & Wieck, A. D. (2009). Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring. Applied Physics Letters. https://doi.org/10.1063/1.3069281 bibtex: '@article{Buchholz_Fischer_Kunze_Reuter_Wieck_2009, title={Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring}, DOI={10.1063/1.3069281}, number={022107}, journal={Applied Physics Letters}, author={Buchholz, S. S. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Buchholz, S. S., S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3069281. ieee: S. S. Buchholz, S. F. Fischer, U. Kunze, D. Reuter, and A. D. Wieck, “Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring,” Applied Physics Letters, 2009. mla: Buchholz, S. S., et al. “Nonlocal Aharonov–Bohm Conductance Oscillations in an Asymmetric Quantum Ring.” Applied Physics Letters, 022107, 2009, doi:10.1063/1.3069281. short: S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:34:37Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3069281 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring type: journal_article user_id: '42514' year: '2009' ... --- _id: '8580' article_number: '023107' author: - first_name: J. H. full_name: Blokland, J. H. last_name: Blokland - first_name: M. full_name: Bozkurt, M. last_name: Bozkurt - first_name: J. M. full_name: Ulloa, J. M. last_name: Ulloa - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: P. M. full_name: Koenraad, P. M. last_name: Koenraad - first_name: P. C. M. full_name: Christianen, P. C. M. last_name: Christianen - first_name: J. C. full_name: Maan, J. C. last_name: Maan citation: ama: Blokland JH, Bozkurt M, Ulloa JM, et al. Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. 2009. doi:10.1063/1.3072366 apa: Blokland, J. H., Bozkurt, M., Ulloa, J. M., Reuter, D., Wieck, A. D., Koenraad, P. M., … Maan, J. C. (2009). Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy. Applied Physics Letters. https://doi.org/10.1063/1.3072366 bibtex: '@article{Blokland_Bozkurt_Ulloa_Reuter_Wieck_Koenraad_Christianen_Maan_2009, title={Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy}, DOI={10.1063/1.3072366}, number={023107}, journal={Applied Physics Letters}, author={Blokland, J. H. and Bozkurt, M. and Ulloa, J. M. and Reuter, Dirk and Wieck, A. D. and Koenraad, P. M. and Christianen, P. C. M. and Maan, J. C.}, year={2009} }' chicago: Blokland, J. H., M. Bozkurt, J. M. Ulloa, Dirk Reuter, A. D. Wieck, P. M. Koenraad, P. C. M. Christianen, and J. C. Maan. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3072366. ieee: J. H. Blokland et al., “Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy,” Applied Physics Letters, 2009. mla: Blokland, J. H., et al. “Ellipsoidal InAs Quantum Dots Observed by Cross-Sectional Scanning Tunneling Microscopy.” Applied Physics Letters, 023107, 2009, doi:10.1063/1.3072366. short: J.H. Blokland, M. Bozkurt, J.M. Ulloa, D. Reuter, A.D. Wieck, P.M. Koenraad, P.C.M. Christianen, J.C. Maan, Applied Physics Letters (2009). date_created: 2019-03-26T08:42:07Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3072366 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy type: journal_article user_id: '42514' year: '2009' ... --- _id: '8585' article_number: '022113' author: - first_name: B. full_name: Marquardt, B. last_name: Marquardt - first_name: M. full_name: Geller, M. last_name: Geller - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Marquardt B, Geller M, Lorke A, Reuter D, Wieck AD. Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. 2009. doi:10.1063/1.3175724 apa: Marquardt, B., Geller, M., Lorke, A., Reuter, D., & Wieck, A. D. (2009). Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots. Applied Physics Letters. https://doi.org/10.1063/1.3175724 bibtex: '@article{Marquardt_Geller_Lorke_Reuter_Wieck_2009, title={Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots}, DOI={10.1063/1.3175724}, number={022113}, journal={Applied Physics Letters}, author={Marquardt, B. and Geller, M. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2009} }' chicago: Marquardt, B., M. Geller, A. Lorke, Dirk Reuter, and A. D. Wieck. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 2009. https://doi.org/10.1063/1.3175724. ieee: B. Marquardt, M. Geller, A. Lorke, D. Reuter, and A. D. Wieck, “Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots,” Applied Physics Letters, 2009. mla: Marquardt, B., et al. “Using a Two-Dimensional Electron Gas to Study Nonequilibrium Tunneling Dynamics and Charge Storage in Self-Assembled Quantum Dots.” Applied Physics Letters, 022113, 2009, doi:10.1063/1.3175724. short: B. Marquardt, M. Geller, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2009). date_created: 2019-03-26T08:55:40Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.3175724 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Using a two-dimensional electron gas to study nonequilibrium tunneling dynamics and charge storage in self-assembled quantum dots type: journal_article user_id: '42514' year: '2009' ... --- _id: '7640' article_number: '193111' author: - first_name: W. full_name: Lei, W. last_name: Lei - first_name: M. full_name: Offer, M. last_name: Offer - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: C. full_name: Notthoff, C. last_name: Notthoff - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: O. full_name: Wibbelhoff, O. last_name: Wibbelhoff - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lei W, Offer M, Lorke A, et al. Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters. 2008;92(19). doi:10.1063/1.2920439 apa: Lei, W., Offer, M., Lorke, A., Notthoff, C., Meier, C., Wibbelhoff, O., & Wieck, A. D. (2008). Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy. Applied Physics Letters, 92(19). https://doi.org/10.1063/1.2920439 bibtex: '@article{Lei_Offer_Lorke_Notthoff_Meier_Wibbelhoff_Wieck_2008, title={Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy}, volume={92}, DOI={10.1063/1.2920439}, number={19193111}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lei, W. and Offer, M. and Lorke, A. and Notthoff, C. and Meier, Cedrik and Wibbelhoff, O. and Wieck, A. D.}, year={2008} }' chicago: Lei, W., M. Offer, A. Lorke, C. Notthoff, Cedrik Meier, O. Wibbelhoff, and A. D. Wieck. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters 92, no. 19 (2008). https://doi.org/10.1063/1.2920439. ieee: W. Lei et al., “Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy,” Applied Physics Letters, vol. 92, no. 19, 2008. mla: Lei, W., et al. “Probing the Band Structure of InAs∕GaAs Quantum Dots by Capacitance-Voltage and Photoluminescence Spectroscopy.” Applied Physics Letters, vol. 92, no. 19, 193111, AIP Publishing, 2008, doi:10.1063/1.2920439. short: W. Lei, M. Offer, A. Lorke, C. Notthoff, C. Meier, O. Wibbelhoff, A.D. Wieck, Applied Physics Letters 92 (2008). date_created: 2019-02-13T11:30:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2920439 extern: '1' intvolume: ' 92' issue: '19' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Probing the band structure of InAs∕GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy type: journal_article user_id: '20798' volume: 92 year: '2008' ... --- _id: '8603' article_number: '112111' author: - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Melnikov, A. last_name: Melnikov - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Y. full_name: Cordier, Y. last_name: Cordier - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Lo F-Y, Melnikov A, Reuter D, Cordier Y, Wieck AD. Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. 2008. doi:10.1063/1.2899968 apa: Lo, F.-Y., Melnikov, A., Reuter, D., Cordier, Y., & Wieck, A. D. (2008). Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures. Applied Physics Letters. https://doi.org/10.1063/1.2899968 bibtex: '@article{Lo_Melnikov_Reuter_Cordier_Wieck_2008, title={Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures}, DOI={10.1063/1.2899968}, number={112111}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov, A. and Reuter, Dirk and Cordier, Y. and Wieck, A. D.}, year={2008} }' chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, Y. Cordier, and A. D. Wieck. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2899968. ieee: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, “Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures,” Applied Physics Letters, 2008. mla: Lo, F. Y., et al. “Magnetotransport in Gd-Implanted Wurtzite GaN∕AlxGa1−xN High Electron Mobility Transistor Structures.” Applied Physics Letters, 112111, 2008, doi:10.1063/1.2899968. short: F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:26:36Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2899968 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetotransport in Gd-implanted wurtzite GaN∕AlxGa1−xN high electron mobility transistor structures type: journal_article user_id: '42514' year: '2008' ... --- _id: '8607' article_number: '241920' author: - first_name: P. E. full_name: Hohage, P. E. last_name: Hohage - first_name: J. full_name: Nannen, J. last_name: Nannen - first_name: S. full_name: Halm, S. last_name: Halm - first_name: G. full_name: Bacher, G. last_name: Bacher - first_name: M. full_name: Wahle, M. last_name: Wahle - first_name: S. F. full_name: Fischer, S. F. last_name: Fischer - first_name: U. full_name: Kunze, U. last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Hohage PE, Nannen J, Halm S, et al. Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. 2008. doi:10.1063/1.2943279 apa: Hohage, P. E., Nannen, J., Halm, S., Bacher, G., Wahle, M., Fischer, S. F., … Wieck, A. D. (2008). Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature. Applied Physics Letters. https://doi.org/10.1063/1.2943279 bibtex: '@article{Hohage_Nannen_Halm_Bacher_Wahle_Fischer_Kunze_Reuter_Wieck_2008, title={Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature}, DOI={10.1063/1.2943279}, number={241920}, journal={Applied Physics Letters}, author={Hohage, P. E. and Nannen, J. and Halm, S. and Bacher, G. and Wahle, M. and Fischer, S. F. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2008} }' chicago: Hohage, P. E., J. Nannen, S. Halm, G. Bacher, M. Wahle, S. F. Fischer, U. Kunze, Dirk Reuter, and A. D. Wieck. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2943279. ieee: P. E. Hohage et al., “Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature,” Applied Physics Letters, 2008. mla: Hohage, P. E., et al. “Coherent Spin Dynamics in Permalloy-GaAs Hybrids at Room Temperature.” Applied Physics Letters, 241920, 2008, doi:10.1063/1.2943279. short: P.E. Hohage, J. Nannen, S. Halm, G. Bacher, M. Wahle, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters (2008). date_created: 2019-03-26T09:51:24Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2943279 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Coherent spin dynamics in Permalloy-GaAs hybrids at room temperature type: journal_article user_id: '42514' year: '2008' ... --- _id: '8608' article_number: '242102' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: H. full_name: Wende, H. last_name: Wende - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2948856 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Reuter, D., Wieck, A. D., … Westerholt, K. (2008). Electrical detection of photoinduced spins both at room temperature and in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2948856 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Wende_Petracic_et al._2008, title={Electrical detection of photoinduced spins both at room temperature and in remanence}, DOI={10.1063/1.2948856}, number={242102}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Wende, H. and Petracic, O. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2948856. ieee: S. Hövel et al., “Electrical detection of photoinduced spins both at room temperature and in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Electrical Detection of Photoinduced Spins Both at Room Temperature and in Remanence.” Applied Physics Letters, 242102, 2008, doi:10.1063/1.2948856. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, H. Wende, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:52:27Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2948856 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Electrical detection of photoinduced spins both at room temperature and in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '8609' article_number: '021117' author: - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: A. full_name: Ludwig, A. last_name: Ludwig - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: H. full_name: Wende, H. last_name: Wende - first_name: W. full_name: Keune, W. last_name: Keune - first_name: O. full_name: Petracic, O. last_name: Petracic - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Hövel S, Gerhardt NC, Hofmann MR, et al. Room temperature electrical spin injection in remanence. Applied Physics Letters. 2008. doi:10.1063/1.2957469 apa: Hövel, S., Gerhardt, N. C., Hofmann, M. R., Lo, F.-Y., Ludwig, A., Reuter, D., … Westerholt, K. (2008). Room temperature electrical spin injection in remanence. Applied Physics Letters. https://doi.org/10.1063/1.2957469 bibtex: '@article{Hövel_Gerhardt_Hofmann_Lo_Ludwig_Reuter_Wieck_Schuster_Wende_Keune_et al._2008, title={Room temperature electrical spin injection in remanence}, DOI={10.1063/1.2957469}, number={021117}, journal={Applied Physics Letters}, author={Hövel, S. and Gerhardt, N. C. and Hofmann, M. R. and Lo, F.-Y. and Ludwig, A. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Wende, H. and Keune, W. and et al.}, year={2008} }' chicago: Hövel, S., N. C. Gerhardt, M. R. Hofmann, F.-Y. Lo, A. Ludwig, Dirk Reuter, A. D. Wieck, et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2957469. ieee: S. Hövel et al., “Room temperature electrical spin injection in remanence,” Applied Physics Letters, 2008. mla: Hövel, S., et al. “Room Temperature Electrical Spin Injection in Remanence.” Applied Physics Letters, 021117, 2008, doi:10.1063/1.2957469. short: S. Hövel, N.C. Gerhardt, M.R. Hofmann, F.-Y. Lo, A. Ludwig, D. Reuter, A.D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt, Applied Physics Letters (2008). date_created: 2019-03-26T09:53:44Z date_updated: 2022-01-06T07:03:57Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2957469 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Room temperature electrical spin injection in remanence type: journal_article user_id: '42514' year: '2008' ... --- _id: '39749' article_number: '131903' author: - first_name: A. full_name: Hoischen, A. last_name: Hoischen - first_name: S. A. full_name: Benning, S. A. last_name: Benning - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Hoischen A, Benning SA, Kitzerow H-S. Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters. 2008;93(13). doi:10.1063/1.2990762 apa: Hoischen, A., Benning, S. A., & Kitzerow, H.-S. (2008). Submicrometer periodic patterns fixed by photopolymerization of dissipative structures. Applied Physics Letters, 93(13), Article 131903. https://doi.org/10.1063/1.2990762 bibtex: '@article{Hoischen_Benning_Kitzerow_2008, title={Submicrometer periodic patterns fixed by photopolymerization of dissipative structures}, volume={93}, DOI={10.1063/1.2990762}, number={13131903}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoischen, A. and Benning, S. A. and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Hoischen, A., S. A. Benning, and Heinz-Siegfried Kitzerow. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters 93, no. 13 (2008). https://doi.org/10.1063/1.2990762. ieee: 'A. Hoischen, S. A. Benning, and H.-S. Kitzerow, “Submicrometer periodic patterns fixed by photopolymerization of dissipative structures,” Applied Physics Letters, vol. 93, no. 13, Art. no. 131903, 2008, doi: 10.1063/1.2990762.' mla: Hoischen, A., et al. “Submicrometer Periodic Patterns Fixed by Photopolymerization of Dissipative Structures.” Applied Physics Letters, vol. 93, no. 13, 131903, AIP Publishing, 2008, doi:10.1063/1.2990762. short: A. Hoischen, S.A. Benning, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:52:43Z date_updated: 2023-01-24T18:53:04Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2990762 intvolume: ' 93' issue: '13' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Submicrometer periodic patterns fixed by photopolymerization of dissipative structures type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '39751' article_number: '183304' author: - first_name: Andreas full_name: Redler, Andreas last_name: Redler - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow citation: ama: Redler A, Kitzerow H-S. Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters. 2008;93(18). doi:10.1063/1.3021364 apa: Redler, A., & Kitzerow, H.-S. (2008). Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal. Applied Physics Letters, 93(18), Article 183304. https://doi.org/10.1063/1.3021364 bibtex: '@article{Redler_Kitzerow_2008, title={Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal}, volume={93}, DOI={10.1063/1.3021364}, number={18183304}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Redler, Andreas and Kitzerow, Heinz-Siegfried}, year={2008} }' chicago: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters 93, no. 18 (2008). https://doi.org/10.1063/1.3021364. ieee: 'A. Redler and H.-S. Kitzerow, “Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal,” Applied Physics Letters, vol. 93, no. 18, Art. no. 183304, 2008, doi: 10.1063/1.3021364.' mla: Redler, Andreas, and Heinz-Siegfried Kitzerow. “Influence of Doping on the Photorefractive Properties of a Polymer-Dispersed Liquid Crystal.” Applied Physics Letters, vol. 93, no. 18, 183304, AIP Publishing, 2008, doi:10.1063/1.3021364. short: A. Redler, H.-S. Kitzerow, Applied Physics Letters 93 (2008). date_created: 2023-01-24T18:53:20Z date_updated: 2023-01-24T18:53:34Z department: - _id: '313' - _id: '638' doi: 10.1063/1.3021364 intvolume: ' 93' issue: '18' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Influence of doping on the photorefractive properties of a polymer-dispersed liquid crystal type: journal_article user_id: '254' volume: 93 year: '2008' ... --- _id: '26076' article_number: '151109' author: - first_name: Xiao-Feng full_name: Han, Xiao-Feng last_name: Han - first_name: Yu-Xiang full_name: Weng, Yu-Xiang last_name: Weng - first_name: Rui full_name: Wang, Rui last_name: Wang - first_name: Xi-Hao full_name: Chen, Xi-Hao last_name: Chen - first_name: Kai Hong full_name: Luo, Kai Hong id: '36389' last_name: Luo orcid: 0000-0003-1008-4976 - first_name: Ling-An full_name: Wu, Ling-An last_name: Wu - first_name: Jimin full_name: Zhao, Jimin last_name: Zhao citation: ama: Han X-F, Weng Y-X, Wang R, et al. Single-photon level ultrafast all-optical switching. Applied Physics Letters. Published online 2008. doi:10.1063/1.2909540 apa: Han, X.-F., Weng, Y.-X., Wang, R., Chen, X.-H., Luo, K. H., Wu, L.-A., & Zhao, J. (2008). Single-photon level ultrafast all-optical switching. Applied Physics Letters, Article 151109. https://doi.org/10.1063/1.2909540 bibtex: '@article{Han_Weng_Wang_Chen_Luo_Wu_Zhao_2008, title={Single-photon level ultrafast all-optical switching}, DOI={10.1063/1.2909540}, number={151109}, journal={Applied Physics Letters}, author={Han, Xiao-Feng and Weng, Yu-Xiang and Wang, Rui and Chen, Xi-Hao and Luo, Kai Hong and Wu, Ling-An and Zhao, Jimin}, year={2008} }' chicago: Han, Xiao-Feng, Yu-Xiang Weng, Rui Wang, Xi-Hao Chen, Kai Hong Luo, Ling-An Wu, and Jimin Zhao. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 2008. https://doi.org/10.1063/1.2909540. ieee: 'X.-F. Han et al., “Single-photon level ultrafast all-optical switching,” Applied Physics Letters, Art. no. 151109, 2008, doi: 10.1063/1.2909540.' mla: Han, Xiao-Feng, et al. “Single-Photon Level Ultrafast All-Optical Switching.” Applied Physics Letters, 151109, 2008, doi:10.1063/1.2909540. short: X.-F. Han, Y.-X. Weng, R. Wang, X.-H. Chen, K.H. Luo, L.-A. Wu, J. Zhao, Applied Physics Letters (2008). date_created: 2021-10-12T08:46:00Z date_updated: 2023-01-26T10:08:30Z doi: 10.1063/1.2909540 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-photon level ultrafast all-optical switching type: journal_article user_id: '36389' year: '2008' ... --- _id: '1761' article_number: '151109' author: - first_name: Carsten full_name: Rockstuhl, Carsten last_name: Rockstuhl - first_name: Falk full_name: Lederer, Falk last_name: Lederer - first_name: Thomas full_name: Zentgraf, Thomas id: '30525' last_name: Zentgraf orcid: 0000-0002-8662-1101 - first_name: Harald full_name: Giessen, Harald last_name: Giessen citation: ama: Rockstuhl C, Lederer F, Zentgraf T, Giessen H. Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters. 2007;91(15). doi:10.1063/1.2799240 apa: Rockstuhl, C., Lederer, F., Zentgraf, T., & Giessen, H. (2007). Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays. Applied Physics Letters, 91(15). https://doi.org/10.1063/1.2799240 bibtex: '@article{Rockstuhl_Lederer_Zentgraf_Giessen_2007, title={Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays}, volume={91}, DOI={10.1063/1.2799240}, number={15151109}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rockstuhl, Carsten and Lederer, Falk and Zentgraf, Thomas and Giessen, Harald}, year={2007} }' chicago: Rockstuhl, Carsten, Falk Lederer, Thomas Zentgraf, and Harald Giessen. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters 91, no. 15 (2007). https://doi.org/10.1063/1.2799240. ieee: C. Rockstuhl, F. Lederer, T. Zentgraf, and H. Giessen, “Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays,” Applied Physics Letters, vol. 91, no. 15, 2007. mla: Rockstuhl, Carsten, et al. “Enhanced Transmission of Periodic, Quasiperiodic, and Random Nanoaperture Arrays.” Applied Physics Letters, vol. 91, no. 15, 151109, AIP Publishing, 2007, doi:10.1063/1.2799240. short: C. Rockstuhl, F. Lederer, T. Zentgraf, H. Giessen, Applied Physics Letters 91 (2007). date_created: 2018-03-23T13:07:38Z date_updated: 2022-01-06T06:53:16Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2799240 intvolume: ' 91' issue: '15' publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Enhanced transmission of periodic, quasiperiodic, and random nanoaperture arrays type: journal_article user_id: '30525' volume: 91 year: '2007' ...