---
_id: '8630'
article_number: '262505'
author:
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: V.
full_name: Ney, V.
last_name: Ney
- first_name: T.
full_name: Kammermeier, T.
last_name: Kammermeier
- first_name: A.
full_name: Ney, A.
last_name: Ney
- first_name: J.
full_name: Schörmann, J.
last_name: Schörmann
- first_name: S.
full_name: Potthast, S.
last_name: Potthast
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
citation:
ama: Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of
Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113
apa: Lo, F.-Y., Melnikov, A., Reuter, D., Wieck, A. D., Ney, V., Kammermeier, T.,
… Lischka, K. (2007). Magnetic and structural properties of Gd-implanted zinc-blende
GaN. Applied Physics Letters. https://doi.org/10.1063/1.2753113
bibtex: '@article{Lo_Melnikov_Reuter_Wieck_Ney_Kammermeier_Ney_Schörmann_Potthast_As_et
al._2007, title={Magnetic and structural properties of Gd-implanted zinc-blende
GaN}, DOI={10.1063/1.2753113},
number={262505}, journal={Applied Physics Letters}, author={Lo, F.-Y. and Melnikov,
A. and Reuter, Dirk and Wieck, A. D. and Ney, V. and Kammermeier, T. and Ney,
A. and Schörmann, J. and Potthast, S. and As, D. J. and et al.}, year={2007} }'
chicago: Lo, F.-Y., A. Melnikov, Dirk Reuter, A. D. Wieck, V. Ney, T. Kammermeier,
A. Ney, et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 2007. https://doi.org/10.1063/1.2753113.
ieee: F.-Y. Lo et al., “Magnetic and structural properties of Gd-implanted
zinc-blende GaN,” Applied Physics Letters, 2007.
mla: Lo, F. Y., et al. “Magnetic and Structural Properties of Gd-Implanted Zinc-Blende
GaN.” Applied Physics Letters, 262505, 2007, doi:10.1063/1.2753113.
short: F.-Y. Lo, A. Melnikov, D. Reuter, A.D. Wieck, V. Ney, T. Kammermeier, A.
Ney, J. Schörmann, S. Potthast, D.J. As, K. Lischka, Applied Physics Letters (2007).
date_created: 2019-03-26T10:23:42Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2753113
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Magnetic and structural properties of Gd-implanted zinc-blende GaN
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '8632'
article_number: '123108'
author:
- first_name: M.
full_name: Mehta, M.
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Melnikov, A.
last_name: Melnikov
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: A.
full_name: Remhof, A.
last_name: Remhof
citation:
ama: Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Focused ion beam implantation
induced site-selective growth of InAs quantum dots. Applied Physics Letters.
2007. doi:10.1063/1.2786836
apa: Mehta, M., Reuter, D., Melnikov, A., Wieck, A. D., & Remhof, A. (2007).
Focused ion beam implantation induced site-selective growth of InAs quantum dots.
Applied Physics Letters. https://doi.org/10.1063/1.2786836
bibtex: '@article{Mehta_Reuter_Melnikov_Wieck_Remhof_2007, title={Focused ion beam
implantation induced site-selective growth of InAs quantum dots}, DOI={10.1063/1.2786836},
number={123108}, journal={Applied Physics Letters}, author={Mehta, M. and Reuter,
Dirk and Melnikov, A. and Wieck, A. D. and Remhof, A.}, year={2007} }'
chicago: Mehta, M., Dirk Reuter, A. Melnikov, A. D. Wieck, and A. Remhof. “Focused
Ion Beam Implantation Induced Site-Selective Growth of InAs Quantum Dots.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2786836.
ieee: M. Mehta, D. Reuter, A. Melnikov, A. D. Wieck, and A. Remhof, “Focused ion
beam implantation induced site-selective growth of InAs quantum dots,” Applied
Physics Letters, 2007.
mla: Mehta, M., et al. “Focused Ion Beam Implantation Induced Site-Selective Growth
of InAs Quantum Dots.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2786836.
short: M. Mehta, D. Reuter, A. Melnikov, A.D. Wieck, A. Remhof, Applied Physics
Letters (2007).
date_created: 2019-03-26T10:26:08Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2786836
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Focused ion beam implantation induced site-selective growth of InAs quantum
dots
type: journal_article
user_id: '42514'
year: '2007'
...
---
_id: '25986'
abstract:
- lang: eng
text: "The authors report the synthesis of nanoporous ZnO, which exhibits a periodically
ordered, uniform pore system with crystalline pore walls. The crystalline structure
is investigated by x-ray diffraction, transmission electron microscopy, and selected
area electron diffraction. The large specific surface area and the uniformity
of the pore system are confirmed by nitrogen physisorption. Raman spectroscopy
along with low-temperature photoluminescence measurements confirms the high degree
of crystallinity and gives insight into defects participating in the radiative
recombination processes.\r\nThe authors thank Günter Koch for recording the TEM
images and Marie-Luise Wolff for valuable help in the laboratory one of the authors
(M.T.) thanks Michael Fröba for the continuous support."
article_number: '123108'
article_type: original
author:
- first_name: T.
full_name: Waitz, T.
last_name: Waitz
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: P. J.
full_name: Klar, P. J.
last_name: Klar
- first_name: J.
full_name: Sann, J.
last_name: Sann
- first_name: J.
full_name: Stehr, J.
last_name: Stehr
- first_name: B. K.
full_name: Meyer, B. K.
last_name: Meyer
citation:
ama: Waitz T, Tiemann M, Klar PJ, Sann J, Stehr J, Meyer BK. Crystalline ZnO with
an enhanced surface area obtained by nanocasting. Applied Physics Letters.
Published online 2007. doi:10.1063/1.2713872
apa: Waitz, T., Tiemann, M., Klar, P. J., Sann, J., Stehr, J., & Meyer, B. K.
(2007). Crystalline ZnO with an enhanced surface area obtained by nanocasting.
Applied Physics Letters, Article 123108. https://doi.org/10.1063/1.2713872
bibtex: '@article{Waitz_Tiemann_Klar_Sann_Stehr_Meyer_2007, title={Crystalline ZnO
with an enhanced surface area obtained by nanocasting}, DOI={10.1063/1.2713872},
number={123108}, journal={Applied Physics Letters}, author={Waitz, T. and Tiemann,
Michael and Klar, P. J. and Sann, J. and Stehr, J. and Meyer, B. K.}, year={2007}
}'
chicago: Waitz, T., Michael Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer.
“Crystalline ZnO with an Enhanced Surface Area Obtained by Nanocasting.” Applied
Physics Letters, 2007. https://doi.org/10.1063/1.2713872.
ieee: 'T. Waitz, M. Tiemann, P. J. Klar, J. Sann, J. Stehr, and B. K. Meyer, “Crystalline
ZnO with an enhanced surface area obtained by nanocasting,” Applied Physics
Letters, Art. no. 123108, 2007, doi: 10.1063/1.2713872.'
mla: Waitz, T., et al. “Crystalline ZnO with an Enhanced Surface Area Obtained by
Nanocasting.” Applied Physics Letters, 123108, 2007, doi:10.1063/1.2713872.
short: T. Waitz, M. Tiemann, P.J. Klar, J. Sann, J. Stehr, B.K. Meyer, Applied Physics
Letters (2007).
date_created: 2021-10-09T09:40:39Z
date_updated: 2023-03-09T08:49:01Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1063/1.2713872
extern: '1'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
quality_controlled: '1'
status: public
title: Crystalline ZnO with an enhanced surface area obtained by nanocasting
type: journal_article
user_id: '23547'
year: '2007'
...
---
_id: '39561'
article_number: '013501'
author:
- first_name: M.
full_name: Scharnberg, M.
last_name: Scharnberg
- first_name: V.
full_name: Zaporojtchenko, V.
last_name: Zaporojtchenko
- first_name: R.
full_name: Adelung, R.
last_name: Adelung
- first_name: F.
full_name: Faupel, F.
last_name: Faupel
- first_name: C.
full_name: Pannemann, C.
last_name: Pannemann
- first_name: T.
full_name: Diekmann, T.
last_name: Diekmann
- first_name: Ulrich
full_name: Hilleringmann, Ulrich
id: '20179'
last_name: Hilleringmann
citation:
ama: Scharnberg M, Zaporojtchenko V, Adelung R, et al. Tuning the threshold voltage
of organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters. 2007;90(1). doi:10.1063/1.2426926
apa: Scharnberg, M., Zaporojtchenko, V., Adelung, R., Faupel, F., Pannemann, C.,
Diekmann, T., & Hilleringmann, U. (2007). Tuning the threshold voltage of
organic field-effect transistors by an electret encapsulating layer. Applied
Physics Letters, 90(1), Article 013501. https://doi.org/10.1063/1.2426926
bibtex: '@article{Scharnberg_Zaporojtchenko_Adelung_Faupel_Pannemann_Diekmann_Hilleringmann_2007,
title={Tuning the threshold voltage of organic field-effect transistors by an
electret encapsulating layer}, volume={90}, DOI={10.1063/1.2426926},
number={1013501}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Scharnberg, M. and Zaporojtchenko, V. and Adelung, R. and Faupel, F. and
Pannemann, C. and Diekmann, T. and Hilleringmann, Ulrich}, year={2007} }'
chicago: Scharnberg, M., V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann,
T. Diekmann, and Ulrich Hilleringmann. “Tuning the Threshold Voltage of Organic
Field-Effect Transistors by an Electret Encapsulating Layer.” Applied Physics
Letters 90, no. 1 (2007). https://doi.org/10.1063/1.2426926.
ieee: 'M. Scharnberg et al., “Tuning the threshold voltage of organic field-effect
transistors by an electret encapsulating layer,” Applied Physics Letters,
vol. 90, no. 1, Art. no. 013501, 2007, doi: 10.1063/1.2426926.'
mla: Scharnberg, M., et al. “Tuning the Threshold Voltage of Organic Field-Effect
Transistors by an Electret Encapsulating Layer.” Applied Physics Letters,
vol. 90, no. 1, 013501, AIP Publishing, 2007, doi:10.1063/1.2426926.
short: M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, C. Pannemann, T.
Diekmann, U. Hilleringmann, Applied Physics Letters 90 (2007).
date_created: 2023-01-24T12:15:22Z
date_updated: 2023-03-21T10:15:06Z
department:
- _id: '59'
doi: 10.1063/1.2426926
intvolume: ' 90'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Tuning the threshold voltage of organic field-effect transistors by an electret
encapsulating layer
type: journal_article
user_id: '20179'
volume: 90
year: '2007'
...
---
_id: '7651'
article_number: '031111'
author:
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Kevin
full_name: Hennessy, Kevin
last_name: Hennessy
- first_name: Elaine D.
full_name: Haberer, Elaine D.
last_name: Haberer
- first_name: Rajat
full_name: Sharma, Rajat
last_name: Sharma
- first_name: Yong-Seok
full_name: Choi, Yong-Seok
last_name: Choi
- first_name: Kelly
full_name: McGroddy, Kelly
last_name: McGroddy
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: Evelyn L.
full_name: Hu, Evelyn L.
last_name: Hu
citation:
ama: Meier C, Hennessy K, Haberer ED, et al. Visible resonant modes in GaN-based
photonic crystal membrane cavities. Applied Physics Letters. 2006;88(3).
doi:10.1063/1.2166680
apa: Meier, C., Hennessy, K., Haberer, E. D., Sharma, R., Choi, Y.-S., McGroddy,
K., … Hu, E. L. (2006). Visible resonant modes in GaN-based photonic crystal membrane
cavities. Applied Physics Letters, 88(3). https://doi.org/10.1063/1.2166680
bibtex: '@article{Meier_Hennessy_Haberer_Sharma_Choi_McGroddy_Keller_DenBaars_Nakamura_Hu_2006,
title={Visible resonant modes in GaN-based photonic crystal membrane cavities},
volume={88}, DOI={10.1063/1.2166680},
number={3031111}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Meier, Cedrik and Hennessy, Kevin and Haberer, Elaine D. and Sharma, Rajat
and Choi, Yong-Seok and McGroddy, Kelly and Keller, Stacia and DenBaars, Steven
P. and Nakamura, Shuji and Hu, Evelyn L.}, year={2006} }'
chicago: Meier, Cedrik, Kevin Hennessy, Elaine D. Haberer, Rajat Sharma, Yong-Seok
Choi, Kelly McGroddy, Stacia Keller, Steven P. DenBaars, Shuji Nakamura, and Evelyn
L. Hu. “Visible Resonant Modes in GaN-Based Photonic Crystal Membrane Cavities.”
Applied Physics Letters 88, no. 3 (2006). https://doi.org/10.1063/1.2166680.
ieee: C. Meier et al., “Visible resonant modes in GaN-based photonic crystal
membrane cavities,” Applied Physics Letters, vol. 88, no. 3, 2006.
mla: Meier, Cedrik, et al. “Visible Resonant Modes in GaN-Based Photonic Crystal
Membrane Cavities.” Applied Physics Letters, vol. 88, no. 3, 031111, AIP
Publishing, 2006, doi:10.1063/1.2166680.
short: C. Meier, K. Hennessy, E.D. Haberer, R. Sharma, Y.-S. Choi, K. McGroddy,
S. Keller, S.P. DenBaars, S. Nakamura, E.L. Hu, Applied Physics Letters 88 (2006).
date_created: 2019-02-13T11:41:17Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2166680
extern: '1'
intvolume: ' 88'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Visible resonant modes in GaN-based photonic crystal membrane cavities
type: journal_article
user_id: '20798'
volume: 88
year: '2006'
...
---
_id: '8648'
article_number: '082110'
author:
- first_name: M.
full_name: Knop, M.
last_name: Knop
- first_name: U.
full_name: Wieser, U.
last_name: Wieser
- first_name: U.
full_name: Kunze, U.
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Knop M, Wieser U, Kunze U, Reuter D, Wieck AD. Ballistic rectification in an
asymmetric mesoscopic cross junction. Applied Physics Letters. 2006. doi:10.1063/1.2179618
apa: Knop, M., Wieser, U., Kunze, U., Reuter, D., & Wieck, A. D. (2006). Ballistic
rectification in an asymmetric mesoscopic cross junction. Applied Physics Letters.
https://doi.org/10.1063/1.2179618
bibtex: '@article{Knop_Wieser_Kunze_Reuter_Wieck_2006, title={Ballistic rectification
in an asymmetric mesoscopic cross junction}, DOI={10.1063/1.2179618},
number={082110}, journal={Applied Physics Letters}, author={Knop, M. and Wieser,
U. and Kunze, U. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Knop, M., U. Wieser, U. Kunze, Dirk Reuter, and A. D. Wieck. “Ballistic
Rectification in an Asymmetric Mesoscopic Cross Junction.” Applied Physics
Letters, 2006. https://doi.org/10.1063/1.2179618.
ieee: M. Knop, U. Wieser, U. Kunze, D. Reuter, and A. D. Wieck, “Ballistic rectification
in an asymmetric mesoscopic cross junction,” Applied Physics Letters, 2006.
mla: Knop, M., et al. “Ballistic Rectification in an Asymmetric Mesoscopic Cross
Junction.” Applied Physics Letters, 082110, 2006, doi:10.1063/1.2179618.
short: M. Knop, U. Wieser, U. Kunze, D. Reuter, A.D. Wieck, Applied Physics Letters
(2006).
date_created: 2019-03-27T07:54:36Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2179618
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Ballistic rectification in an asymmetric mesoscopic cross junction
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8654'
article_number: '121115'
author:
- first_name: R.
full_name: Schmidt, R.
last_name: Schmidt
- first_name: U.
full_name: Scholz, U.
last_name: Scholz
- first_name: M.
full_name: Vitzethum, M.
last_name: Vitzethum
- first_name: R.
full_name: Fix, R.
last_name: Fix
- first_name: C.
full_name: Metzner, C.
last_name: Metzner
- first_name: P.
full_name: Kailuweit, P.
last_name: Kailuweit
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A.
full_name: Wieck, A.
last_name: Wieck
- first_name: M. C.
full_name: Hübner, M. C.
last_name: Hübner
- first_name: S.
full_name: Stufler, S.
last_name: Stufler
- first_name: A.
full_name: Zrenner, A.
last_name: Zrenner
- first_name: S.
full_name: Malzer, S.
last_name: Malzer
- first_name: G. H.
full_name: Döhler, G. H.
last_name: Döhler
citation:
ama: Schmidt R, Scholz U, Vitzethum M, et al. Fabrication of genuine single-quantum-dot
light-emitting diodes. Applied Physics Letters. 2006. doi:10.1063/1.2188057
apa: Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P.,
… Döhler, G. H. (2006). Fabrication of genuine single-quantum-dot light-emitting
diodes. Applied Physics Letters. https://doi.org/10.1063/1.2188057
bibtex: '@article{Schmidt_Scholz_Vitzethum_Fix_Metzner_Kailuweit_Reuter_Wieck_Hübner_Stufler_et
al._2006, title={Fabrication of genuine single-quantum-dot light-emitting diodes},
DOI={10.1063/1.2188057}, number={121115},
journal={Applied Physics Letters}, author={Schmidt, R. and Scholz, U. and Vitzethum,
M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A.
and Hübner, M. C. and Stufler, S. and et al.}, year={2006} }'
chicago: Schmidt, R., U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit,
Dirk Reuter, et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 2006. https://doi.org/10.1063/1.2188057.
ieee: R. Schmidt et al., “Fabrication of genuine single-quantum-dot light-emitting
diodes,” Applied Physics Letters, 2006.
mla: Schmidt, R., et al. “Fabrication of Genuine Single-Quantum-Dot Light-Emitting
Diodes.” Applied Physics Letters, 121115, 2006, doi:10.1063/1.2188057.
short: R. Schmidt, U. Scholz, M. Vitzethum, R. Fix, C. Metzner, P. Kailuweit, D.
Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, S. Malzer, G.H. Döhler,
Applied Physics Letters (2006).
date_created: 2019-03-27T08:21:39Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2188057
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Fabrication of genuine single-quantum-dot light-emitting diodes
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8665'
article_number: '123105'
author:
- first_name: V.
full_name: Stavarache, V.
last_name: Stavarache
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Schwab, M.
last_name: Schwab
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: R.
full_name: Oulton, R.
last_name: Oulton
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Stavarache V, Reuter D, Wieck AD, et al. Control of quantum dot excitons by
lateral electric fields. Applied Physics Letters. 2006. doi:10.1063/1.2345233
apa: Stavarache, V., Reuter, D., Wieck, A. D., Schwab, M., Yakovlev, D. R., Oulton,
R., & Bayer, M. (2006). Control of quantum dot excitons by lateral electric
fields. Applied Physics Letters. https://doi.org/10.1063/1.2345233
bibtex: '@article{Stavarache_Reuter_Wieck_Schwab_Yakovlev_Oulton_Bayer_2006, title={Control
of quantum dot excitons by lateral electric fields}, DOI={10.1063/1.2345233},
number={123105}, journal={Applied Physics Letters}, author={Stavarache, V. and
Reuter, Dirk and Wieck, A. D. and Schwab, M. and Yakovlev, D. R. and Oulton, R.
and Bayer, M.}, year={2006} }'
chicago: Stavarache, V., Dirk Reuter, A. D. Wieck, M. Schwab, D. R. Yakovlev, R.
Oulton, and M. Bayer. “Control of Quantum Dot Excitons by Lateral Electric Fields.”
Applied Physics Letters, 2006. https://doi.org/10.1063/1.2345233.
ieee: V. Stavarache et al., “Control of quantum dot excitons by lateral electric
fields,” Applied Physics Letters, 2006.
mla: Stavarache, V., et al. “Control of Quantum Dot Excitons by Lateral Electric
Fields.” Applied Physics Letters, 123105, 2006, doi:10.1063/1.2345233.
short: V. Stavarache, D. Reuter, A.D. Wieck, M. Schwab, D.R. Yakovlev, R. Oulton,
M. Bayer, Applied Physics Letters (2006).
date_created: 2019-03-27T08:39:57Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2345233
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Control of quantum dot excitons by lateral electric fields
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8671'
article_number: '231101'
author:
- first_name: P. E.
full_name: Hohage, P. E.
last_name: Hohage
- first_name: G.
full_name: Bacher, G.
last_name: Bacher
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Hohage PE, Bacher G, Reuter D, Wieck AD. Coherent spin oscillations in bulk
GaAs at room temperature. Applied Physics Letters. 2006. doi:10.1063/1.2398909
apa: Hohage, P. E., Bacher, G., Reuter, D., & Wieck, A. D. (2006). Coherent
spin oscillations in bulk GaAs at room temperature. Applied Physics Letters.
https://doi.org/10.1063/1.2398909
bibtex: '@article{Hohage_Bacher_Reuter_Wieck_2006, title={Coherent spin oscillations
in bulk GaAs at room temperature}, DOI={10.1063/1.2398909},
number={231101}, journal={Applied Physics Letters}, author={Hohage, P. E. and
Bacher, G. and Reuter, Dirk and Wieck, A. D.}, year={2006} }'
chicago: Hohage, P. E., G. Bacher, Dirk Reuter, and A. D. Wieck. “Coherent Spin
Oscillations in Bulk GaAs at Room Temperature.” Applied Physics Letters,
2006. https://doi.org/10.1063/1.2398909.
ieee: P. E. Hohage, G. Bacher, D. Reuter, and A. D. Wieck, “Coherent spin oscillations
in bulk GaAs at room temperature,” Applied Physics Letters, 2006.
mla: Hohage, P. E., et al. “Coherent Spin Oscillations in Bulk GaAs at Room Temperature.”
Applied Physics Letters, 231101, 2006, doi:10.1063/1.2398909.
short: P.E. Hohage, G. Bacher, D. Reuter, A.D. Wieck, Applied Physics Letters (2006).
date_created: 2019-03-27T09:15:03Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2398909
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Coherent spin oscillations in bulk GaAs at room temperature
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '29684'
article_number: '012502'
author:
- first_name: Andy
full_name: Thomas, Andy
last_name: Thomas
- first_name: Dirk
full_name: Meyners, Dirk
last_name: Meyners
- first_name: Daniel
full_name: Ebke, Daniel
last_name: Ebke
- first_name: Ning-Ning
full_name: Liu, Ning-Ning
last_name: Liu
- first_name: Marc
full_name: Sacher, Marc
id: '26883'
last_name: Sacher
orcid: 0000-0001-6217-336X
- first_name: Jan
full_name: Schmalhorst, Jan
last_name: Schmalhorst
- first_name: Günter
full_name: Reiss, Günter
last_name: Reiss
- first_name: Hubert
full_name: Ebert, Hubert
last_name: Ebert
- first_name: Andreas
full_name: Hütten, Andreas
last_name: Hütten
citation:
ama: Thomas A, Meyners D, Ebke D, et al. Inverted spin polarization of Heusler alloys
for spintronic devices. Applied Physics Letters. 2006;89(1). doi:10.1063/1.2219333
apa: Thomas, A., Meyners, D., Ebke, D., Liu, N.-N., Sacher, M., Schmalhorst, J.,
Reiss, G., Ebert, H., & Hütten, A. (2006). Inverted spin polarization of Heusler
alloys for spintronic devices. Applied Physics Letters, 89(1), Article
012502. https://doi.org/10.1063/1.2219333
bibtex: '@article{Thomas_Meyners_Ebke_Liu_Sacher_Schmalhorst_Reiss_Ebert_Hütten_2006,
title={Inverted spin polarization of Heusler alloys for spintronic devices}, volume={89},
DOI={10.1063/1.2219333}, number={1012502},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Thomas,
Andy and Meyners, Dirk and Ebke, Daniel and Liu, Ning-Ning and Sacher, Marc and
Schmalhorst, Jan and Reiss, Günter and Ebert, Hubert and Hütten, Andreas}, year={2006}
}'
chicago: Thomas, Andy, Dirk Meyners, Daniel Ebke, Ning-Ning Liu, Marc Sacher, Jan
Schmalhorst, Günter Reiss, Hubert Ebert, and Andreas Hütten. “Inverted Spin Polarization
of Heusler Alloys for Spintronic Devices.” Applied Physics Letters 89,
no. 1 (2006). https://doi.org/10.1063/1.2219333.
ieee: 'A. Thomas et al., “Inverted spin polarization of Heusler alloys for
spintronic devices,” Applied Physics Letters, vol. 89, no. 1, Art. no.
012502, 2006, doi: 10.1063/1.2219333.'
mla: Thomas, Andy, et al. “Inverted Spin Polarization of Heusler Alloys for Spintronic
Devices.” Applied Physics Letters, vol. 89, no. 1, 012502, AIP Publishing,
2006, doi:10.1063/1.2219333.
short: A. Thomas, D. Meyners, D. Ebke, N.-N. Liu, M. Sacher, J. Schmalhorst, G.
Reiss, H. Ebert, A. Hütten, Applied Physics Letters 89 (2006).
date_created: 2022-01-31T10:16:33Z
date_updated: 2024-04-23T12:18:59Z
department:
- _id: '15'
doi: 10.1063/1.2219333
extern: '1'
intvolume: ' 89'
issue: '1'
keyword:
- Physics and Astronomy (miscellaneous)
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Inverted spin polarization of Heusler alloys for spintronic devices
type: journal_article
user_id: '26883'
volume: 89
year: '2006'
...
---
_id: '7653'
article_number: '243101'
author:
- first_name: Y.-S.
full_name: Choi, Y.-S.
last_name: Choi
- first_name: K.
full_name: Hennessy, K.
last_name: Hennessy
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E.
full_name: Haberer, E.
last_name: Haberer
- first_name: Y.
full_name: Gao, Y.
last_name: Gao
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities.
Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713
apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P.,
… Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied
Physics Letters, 87(24). https://doi.org/10.1063/1.2147713
bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005,
title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101},
journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S.
and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P.
and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }'
chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars,
S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.”
Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713.
ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,”
Applied Physics Letters, vol. 87, no. 24, 2005.
mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied
Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713.
short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S.
Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:47:23Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2147713
extern: '1'
intvolume: ' 87'
issue: '24'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: GaN blue photonic crystal membrane nanocavities
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7654'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters, 87(16).
https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, volume={87}, DOI={10.1063/1.2112192},
number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk
and Wieck, Andreas D.}, year={2005} }'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005).
https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, vol. 87, no. 16, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:48:22Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2112192
extern: '1'
intvolume: ' 87'
issue: '16'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7655'
article_number: '101107'
author:
- first_name: A.
full_name: David, A.
last_name: David
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: F. S.
full_name: Diana, F. S.
last_name: Diana
- first_name: S. P.
full_name: DenBaars, S. P.
last_name: DenBaars
- first_name: E.
full_name: Hu, E.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
- first_name: C.
full_name: Weisbuch, C.
last_name: Weisbuch
- first_name: H.
full_name: Benisty, H.
last_name: Benisty
citation:
ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned
multimode GaN waveguides for light extraction. Applied Physics Letters.
2005;87(10). doi:10.1063/1.2039987
apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., …
Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN
waveguides for light extraction. Applied Physics Letters, 87(10).
https://doi.org/10.1063/1.2039987
bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005,
title={Photonic bands in two-dimensionally patterned multimode GaN waveguides
for light extraction}, volume={87}, DOI={10.1063/1.2039987},
number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars,
S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005}
}'
chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu,
S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally
Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters
87, no. 10 (2005). https://doi.org/10.1063/1.2039987.
ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode
GaN waveguides for light extraction,” Applied Physics Letters, vol. 87,
no. 10, 2005.
mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode
GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87,
no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987.
short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura,
C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005).
date_created: 2019-02-13T11:48:57Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2039987
extern: '1'
intvolume: ' 87'
issue: '10'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for
light extraction
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7656'
article_number: '051107'
author:
- first_name: R.
full_name: Sharma, R.
last_name: Sharma
- first_name: E. D.
full_name: Haberer, E. D.
last_name: Haberer
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: E. L.
full_name: Hu, E. L.
last_name: Hu
- first_name: S.
full_name: Nakamura, S.
last_name: Nakamura
citation:
ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based
air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380
apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005).
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated
using band-gap-selective photoelectrochemical etching. Applied Physics Letters,
87(5). https://doi.org/10.1063/1.2008380
bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented
GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective
photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380},
number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura,
S.}, year={2005} }'
chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically
Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using
Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters
87, no. 5 (2005). https://doi.org/10.1063/1.2008380.
ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically
oriented GaN-based air-gap distributed Bragg reflector structure fabricated using
band-gap-selective photoelectrochemical etching,” Applied Physics Letters,
vol. 87, no. 5, 2005.
mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg
Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.”
Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005,
doi:10.1063/1.2008380.
short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics
Letters 87 (2005).
date_created: 2019-02-13T11:50:37Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.2008380
extern: '1'
intvolume: ' 87'
issue: '5'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure
fabricated using band-gap-selective photoelectrochemical etching
type: journal_article
user_id: '20798'
volume: 87
year: '2005'
...
---
_id: '7659'
article_number: '031901'
author:
- first_name: Arpan
full_name: Chakraborty, Arpan
last_name: Chakraborty
- first_name: Stacia
full_name: Keller, Stacia
last_name: Keller
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Benjamin A.
full_name: Haskell, Benjamin A.
last_name: Haskell
- first_name: Salka
full_name: Keller, Salka
last_name: Keller
- first_name: Patrick
full_name: Waltereit, Patrick
last_name: Waltereit
- first_name: Steven P.
full_name: DenBaars, Steven P.
last_name: DenBaars
- first_name: Shuji
full_name: Nakamura, Shuji
last_name: Nakamura
- first_name: James S.
full_name: Speck, James S.
last_name: Speck
- first_name: Umesh K.
full_name: Mishra, Umesh K.
last_name: Mishra
citation:
ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN
multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied
Physics Letters. 2005;86(3). doi:10.1063/1.1851007
apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit,
P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics
Letters, 86(3). https://doi.org/10.1063/1.1851007
bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005,
title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on
lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007},
number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing},
author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin
A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura,
Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }'
chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka
Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck,
and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum
Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics
Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007.
ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple
quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied
Physics Letters, vol. 86, no. 3, 2005.
mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple
Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied
Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007.
short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit,
S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86
(2005).
date_created: 2019-02-13T12:27:05Z
date_updated: 2022-01-06T07:03:43Z
department:
- _id: '15'
doi: 10.1063/1.1851007
extern: '1'
intvolume: ' 86'
issue: '3'
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
publisher: AIP Publishing
status: public
title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral
epitaxially overgrown a-plane GaN
type: journal_article
user_id: '20798'
volume: 86
year: '2005'
...
---
_id: '8679'
article_number: '162110'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C.
full_name: Werner, C.
last_name: Werner
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: S.
full_name: Petrosyan, S.
last_name: Petrosyan
citation:
ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional
lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829
apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion
characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters.
https://doi.org/10.1063/1.1897829
bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics
of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829},
number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner,
C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }'
chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics
of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005.
https://doi.org/10.1063/1.1897829.
ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics
of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005.
mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral
P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829.
short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005).
date_created: 2019-03-27T09:32:08Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1897829
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Depletion characteristics of two-dimensional lateral p‐n-junctions
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8683'
article_number: '042104'
author:
- first_name: T.
full_name: Müller, T.
last_name: Müller
- first_name: A.
full_name: Würtz, A.
last_name: Würtz
- first_name: A.
full_name: Lorke, A.
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
citation:
ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a
driven electron ratchet in a two-dimensional electron system. Applied Physics
Letters. 2005. doi:10.1063/1.2001740
apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form
sampling using a driven electron ratchet in a two-dimensional electron system.
Applied Physics Letters. https://doi.org/10.1063/1.2001740
bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104},
journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke,
A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }'
chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form
Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.”
Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740.
ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling
using a driven electron ratchet in a two-dimensional electron system,” Applied
Physics Letters, 2005.
mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a
Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005,
doi:10.1063/1.2001740.
short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters
(2005).
date_created: 2019-03-27T10:19:20Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2001740
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron
system
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8685'
article_number: '032502'
author:
- first_name: N. C.
full_name: Gerhardt, N. C.
last_name: Gerhardt
- first_name: S.
full_name: Hövel, S.
last_name: Hövel
- first_name: C.
full_name: Brenner, C.
last_name: Brenner
- first_name: M. R.
full_name: Hofmann, M. R.
last_name: Hofmann
- first_name: F.-Y.
full_name: Lo, F.-Y.
last_name: Lo
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: E.
full_name: Schuster, E.
last_name: Schuster
- first_name: W.
full_name: Keune, W.
last_name: Keune
- first_name: K.
full_name: Westerholt, K.
last_name: Westerholt
citation:
ama: Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from
ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843
apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter,
D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic
contacts in remanence. Applied Physics Letters. https://doi.org/10.1063/1.1996843
bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005,
title={Electron spin injection into GaAs from ferromagnetic contacts in remanence},
DOI={10.1063/1.1996843}, number={032502},
journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner,
C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster,
E. and Keune, W. and Westerholt, K.}, year={2005} }'
chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter,
A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection
into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters,
2005. https://doi.org/10.1063/1.1996843.
ieee: N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic
contacts in remanence,” Applied Physics Letters, 2005.
mla: Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic
Contacts in Remanence.” Applied Physics Letters, 032502, 2005, doi:10.1063/1.1996843.
short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D.
Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005).
date_created: 2019-03-27T10:21:16Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.1996843
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Electron spin injection into GaAs from ferromagnetic contacts in remanence
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8690'
article_number: '163117'
author:
- first_name: Stephan
full_name: Lüttjohann, Stephan
last_name: Lüttjohann
- first_name: Cedrik
full_name: Meier, Cedrik
last_name: Meier
- first_name: Axel
full_name: Lorke, Axel
last_name: Lorke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs
quantum-dot structures observed by photoluminescence and capacitance-voltage spectra.
Applied Physics Letters. 2005. doi:10.1063/1.2112192
apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005).
Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192
bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects
in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra}, DOI={10.1063/1.2112192},
number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan
and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas
D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence
and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192.
ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening
effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage
spectra,” Applied Physics Letters, 2005.
mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures
Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics
Letters, 163117, 2005, doi:10.1063/1.2112192.
short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T10:39:18Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2112192
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Screening effects in InAs quantum-dot structures observed by photoluminescence
and capacitance-voltage spectra
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8691'
article_number: '232108'
author:
- first_name: Boris
full_name: Grbić, Boris
last_name: Grbić
- first_name: Renaud
full_name: Leturcq, Renaud
last_name: Leturcq
- first_name: Klaus
full_name: Ensslin, Klaus
last_name: Ensslin
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
citation:
ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in
p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994
apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005).
Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics
Letters. https://doi.org/10.1063/1.2139994
bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor
in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994},
number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq,
Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005}
}'
chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D.
Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied
Physics Letters, 2005. https://doi.org/10.1063/1.2139994.
ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole
transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters,
2005.
mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.”
Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994.
short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics
Letters (2005).
date_created: 2019-03-27T11:12:28Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1063/1.2139994
language:
- iso: eng
publication: Applied Physics Letters
publication_identifier:
issn:
- 0003-6951
- 1077-3118
publication_status: published
status: public
title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures
type: journal_article
user_id: '42514'
year: '2005'
...