--- _id: '7653' article_number: '243101' author: - first_name: Y.-S. full_name: Choi, Y.-S. last_name: Choi - first_name: K. full_name: Hennessy, K. last_name: Hennessy - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: E. full_name: Haberer, E. last_name: Haberer - first_name: Y. full_name: Gao, Y. last_name: Gao - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: E. L. full_name: Hu, E. L. last_name: Hu - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: Choi Y-S, Hennessy K, Sharma R, et al. GaN blue photonic crystal membrane nanocavities. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2147713 apa: Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P., … Meier, C. (2005). GaN blue photonic crystal membrane nanocavities. Applied Physics Letters, 87(24). https://doi.org/10.1063/1.2147713 bibtex: '@article{Choi_Hennessy_Sharma_Haberer_Gao_DenBaars_Nakamura_Hu_Meier_2005, title={GaN blue photonic crystal membrane nanocavities}, volume={87}, DOI={10.1063/1.2147713}, number={24243101}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Y.-S. and Hennessy, K. and Sharma, R. and Haberer, E. and Gao, Y. and DenBaars, S. P. and Nakamura, S. and Hu, E. L. and Meier, Cedrik}, year={2005} }' chicago: Choi, Y.-S., K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S. P. DenBaars, S. Nakamura, E. L. Hu, and Cedrik Meier. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2147713. ieee: Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,” Applied Physics Letters, vol. 87, no. 24, 2005. mla: Choi, Y. S., et al. “GaN Blue Photonic Crystal Membrane Nanocavities.” Applied Physics Letters, vol. 87, no. 24, 243101, AIP Publishing, 2005, doi:10.1063/1.2147713. short: Y.-S. Choi, K. Hennessy, R. Sharma, E. Haberer, Y. Gao, S.P. DenBaars, S. Nakamura, E.L. Hu, C. Meier, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:47:23Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2147713 extern: '1' intvolume: ' 87' issue: '24' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: GaN blue photonic crystal membrane nanocavities type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7654' article_number: '163117' author: - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005;87(16). doi:10.1063/1.2112192 apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters, 87(16). https://doi.org/10.1063/1.2112192 bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, volume={87}, DOI={10.1063/1.2112192}, number={16163117}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters 87, no. 16 (2005). https://doi.org/10.1063/1.2112192. ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, vol. 87, no. 16, 2005. mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, vol. 87, no. 16, 163117, AIP Publishing, 2005, doi:10.1063/1.2112192. short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:48:22Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2112192 extern: '1' intvolume: ' 87' issue: '16' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7655' article_number: '101107' author: - first_name: A. full_name: David, A. last_name: David - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: F. S. full_name: Diana, F. S. last_name: Diana - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: E. full_name: Hu, E. last_name: Hu - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: C. full_name: Weisbuch, C. last_name: Weisbuch - first_name: H. full_name: Benisty, H. last_name: Benisty citation: ama: David A, Meier C, Sharma R, et al. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters. 2005;87(10). doi:10.1063/1.2039987 apa: David, A., Meier, C., Sharma, R., Diana, F. S., DenBaars, S. P., Hu, E., … Benisty, H. (2005). Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. Applied Physics Letters, 87(10). https://doi.org/10.1063/1.2039987 bibtex: '@article{David_Meier_Sharma_Diana_DenBaars_Hu_Nakamura_Weisbuch_Benisty_2005, title={Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction}, volume={87}, DOI={10.1063/1.2039987}, number={10101107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={David, A. and Meier, Cedrik and Sharma, R. and Diana, F. S. and DenBaars, S. P. and Hu, E. and Nakamura, S. and Weisbuch, C. and Benisty, H.}, year={2005} }' chicago: David, A., Cedrik Meier, R. Sharma, F. S. Diana, S. P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, and H. Benisty. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters 87, no. 10 (2005). https://doi.org/10.1063/1.2039987. ieee: A. David et al., “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” Applied Physics Letters, vol. 87, no. 10, 2005. mla: David, A., et al. “Photonic Bands in Two-Dimensionally Patterned Multimode GaN Waveguides for Light Extraction.” Applied Physics Letters, vol. 87, no. 10, 101107, AIP Publishing, 2005, doi:10.1063/1.2039987. short: A. David, C. Meier, R. Sharma, F.S. Diana, S.P. DenBaars, E. Hu, S. Nakamura, C. Weisbuch, H. Benisty, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:48:57Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2039987 extern: '1' intvolume: ' 87' issue: '10' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7656' article_number: '051107' author: - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: E. D. full_name: Haberer, E. D. last_name: Haberer - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: E. L. full_name: Hu, E. L. last_name: Hu - first_name: S. full_name: Nakamura, S. last_name: Nakamura citation: ama: Sharma R, Haberer ED, Meier C, Hu EL, Nakamura S. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters. 2005;87(5). doi:10.1063/1.2008380 apa: Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., & Nakamura, S. (2005). Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching. Applied Physics Letters, 87(5). https://doi.org/10.1063/1.2008380 bibtex: '@article{Sharma_Haberer_Meier_Hu_Nakamura_2005, title={Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching}, volume={87}, DOI={10.1063/1.2008380}, number={5051107}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sharma, R. and Haberer, E. D. and Meier, Cedrik and Hu, E. L. and Nakamura, S.}, year={2005} }' chicago: Sharma, R., E. D. Haberer, Cedrik Meier, E. L. Hu, and S. Nakamura. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters 87, no. 5 (2005). https://doi.org/10.1063/1.2008380. ieee: R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” Applied Physics Letters, vol. 87, no. 5, 2005. mla: Sharma, R., et al. “Vertically Oriented GaN-Based Air-Gap Distributed Bragg Reflector Structure Fabricated Using Band-Gap-Selective Photoelectrochemical Etching.” Applied Physics Letters, vol. 87, no. 5, 051107, AIP Publishing, 2005, doi:10.1063/1.2008380. short: R. Sharma, E.D. Haberer, C. Meier, E.L. Hu, S. Nakamura, Applied Physics Letters 87 (2005). date_created: 2019-02-13T11:50:37Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.2008380 extern: '1' intvolume: ' 87' issue: '5' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching type: journal_article user_id: '20798' volume: 87 year: '2005' ... --- _id: '7659' article_number: '031901' author: - first_name: Arpan full_name: Chakraborty, Arpan last_name: Chakraborty - first_name: Stacia full_name: Keller, Stacia last_name: Keller - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: Benjamin A. full_name: Haskell, Benjamin A. last_name: Haskell - first_name: Salka full_name: Keller, Salka last_name: Keller - first_name: Patrick full_name: Waltereit, Patrick last_name: Waltereit - first_name: Steven P. full_name: DenBaars, Steven P. last_name: DenBaars - first_name: Shuji full_name: Nakamura, Shuji last_name: Nakamura - first_name: James S. full_name: Speck, James S. last_name: Speck - first_name: Umesh K. full_name: Mishra, Umesh K. last_name: Mishra citation: ama: Chakraborty A, Keller S, Meier C, et al. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1851007 apa: Chakraborty, A., Keller, S., Meier, C., Haskell, B. A., Keller, S., Waltereit, P., … Mishra, U. K. (2005). Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN. Applied Physics Letters, 86(3). https://doi.org/10.1063/1.1851007 bibtex: '@article{Chakraborty_Keller_Meier_Haskell_Keller_Waltereit_DenBaars_Nakamura_Speck_Mishra_2005, title={Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN}, volume={86}, DOI={10.1063/1.1851007}, number={3031901}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chakraborty, Arpan and Keller, Stacia and Meier, Cedrik and Haskell, Benjamin A. and Keller, Salka and Waltereit, Patrick and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S. and Mishra, Umesh K.}, year={2005} }' chicago: Chakraborty, Arpan, Stacia Keller, Cedrik Meier, Benjamin A. Haskell, Salka Keller, Patrick Waltereit, Steven P. DenBaars, Shuji Nakamura, James S. Speck, and Umesh K. Mishra. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1851007. ieee: A. Chakraborty et al., “Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied Physics Letters, vol. 86, no. 3, 2005. mla: Chakraborty, Arpan, et al. “Properties of Nonpolar A-Plane InGaN∕GaN Multiple Quantum Wells Grown on Lateral Epitaxially Overgrown a-Plane GaN.” Applied Physics Letters, vol. 86, no. 3, 031901, AIP Publishing, 2005, doi:10.1063/1.1851007. short: A. Chakraborty, S. Keller, C. Meier, B.A. Haskell, S. Keller, P. Waltereit, S.P. DenBaars, S. Nakamura, J.S. Speck, U.K. Mishra, Applied Physics Letters 86 (2005). date_created: 2019-02-13T12:27:05Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1851007 extern: '1' intvolume: ' 86' issue: '3' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN type: journal_article user_id: '20798' volume: 86 year: '2005' ... --- _id: '8679' article_number: '162110' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C. full_name: Werner, C. last_name: Werner - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: S. full_name: Petrosyan, S. last_name: Petrosyan citation: ama: Reuter D, Werner C, Wieck AD, Petrosyan S. Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. 2005. doi:10.1063/1.1897829 apa: Reuter, D., Werner, C., Wieck, A. D., & Petrosyan, S. (2005). Depletion characteristics of two-dimensional lateral p‐n-junctions. Applied Physics Letters. https://doi.org/10.1063/1.1897829 bibtex: '@article{Reuter_Werner_Wieck_Petrosyan_2005, title={Depletion characteristics of two-dimensional lateral p‐n-junctions}, DOI={10.1063/1.1897829}, number={162110}, journal={Applied Physics Letters}, author={Reuter, Dirk and Werner, C. and Wieck, A. D. and Petrosyan, S.}, year={2005} }' chicago: Reuter, Dirk, C. Werner, A. D. Wieck, and S. Petrosyan. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.1897829. ieee: D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics of two-dimensional lateral p‐n-junctions,” Applied Physics Letters, 2005. mla: Reuter, Dirk, et al. “Depletion Characteristics of Two-Dimensional Lateral P‐n-Junctions.” Applied Physics Letters, 162110, 2005, doi:10.1063/1.1897829. short: D. Reuter, C. Werner, A.D. Wieck, S. Petrosyan, Applied Physics Letters (2005). date_created: 2019-03-27T09:32:08Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1897829 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Depletion characteristics of two-dimensional lateral p‐n-junctions type: journal_article user_id: '42514' year: '2005' ... --- _id: '8683' article_number: '042104' author: - first_name: T. full_name: Müller, T. last_name: Müller - first_name: A. full_name: Würtz, A. last_name: Würtz - first_name: A. full_name: Lorke, A. last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Müller T, Würtz A, Lorke A, Reuter D, Wieck AD. Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. 2005. doi:10.1063/1.2001740 apa: Müller, T., Würtz, A., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Wave-form sampling using a driven electron ratchet in a two-dimensional electron system. Applied Physics Letters. https://doi.org/10.1063/1.2001740 bibtex: '@article{Müller_Würtz_Lorke_Reuter_Wieck_2005, title={Wave-form sampling using a driven electron ratchet in a two-dimensional electron system}, DOI={10.1063/1.2001740}, number={042104}, journal={Applied Physics Letters}, author={Müller, T. and Würtz, A. and Lorke, A. and Reuter, Dirk and Wieck, A. D.}, year={2005} }' chicago: Müller, T., A. Würtz, A. Lorke, Dirk Reuter, and A. D. Wieck. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2001740. ieee: T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling using a driven electron ratchet in a two-dimensional electron system,” Applied Physics Letters, 2005. mla: Müller, T., et al. “Wave-Form Sampling Using a Driven Electron Ratchet in a Two-Dimensional Electron System.” Applied Physics Letters, 042104, 2005, doi:10.1063/1.2001740. short: T. Müller, A. Würtz, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T10:19:20Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2001740 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Wave-form sampling using a driven electron ratchet in a two-dimensional electron system type: journal_article user_id: '42514' year: '2005' ... --- _id: '8685' article_number: '032502' author: - first_name: N. C. full_name: Gerhardt, N. C. last_name: Gerhardt - first_name: S. full_name: Hövel, S. last_name: Hövel - first_name: C. full_name: Brenner, C. last_name: Brenner - first_name: M. R. full_name: Hofmann, M. R. last_name: Hofmann - first_name: F.-Y. full_name: Lo, F.-Y. last_name: Lo - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck - first_name: E. full_name: Schuster, E. last_name: Schuster - first_name: W. full_name: Keune, W. last_name: Keune - first_name: K. full_name: Westerholt, K. last_name: Westerholt citation: ama: Gerhardt NC, Hövel S, Brenner C, et al. Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters. 2005. doi:10.1063/1.1996843 apa: Gerhardt, N. C., Hövel, S., Brenner, C., Hofmann, M. R., Lo, F.-Y., Reuter, D., … Westerholt, K. (2005). Electron spin injection into GaAs from ferromagnetic contacts in remanence. Applied Physics Letters. https://doi.org/10.1063/1.1996843 bibtex: '@article{Gerhardt_Hövel_Brenner_Hofmann_Lo_Reuter_Wieck_Schuster_Keune_Westerholt_2005, title={Electron spin injection into GaAs from ferromagnetic contacts in remanence}, DOI={10.1063/1.1996843}, number={032502}, journal={Applied Physics Letters}, author={Gerhardt, N. C. and Hövel, S. and Brenner, C. and Hofmann, M. R. and Lo, F.-Y. and Reuter, Dirk and Wieck, A. D. and Schuster, E. and Keune, W. and Westerholt, K.}, year={2005} }' chicago: Gerhardt, N. C., S. Hövel, C. Brenner, M. R. Hofmann, F.-Y. Lo, Dirk Reuter, A. D. Wieck, E. Schuster, W. Keune, and K. Westerholt. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.1996843. ieee: N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic contacts in remanence,” Applied Physics Letters, 2005. mla: Gerhardt, N. C., et al. “Electron Spin Injection into GaAs from Ferromagnetic Contacts in Remanence.” Applied Physics Letters, 032502, 2005, doi:10.1063/1.1996843. short: N.C. Gerhardt, S. Hövel, C. Brenner, M.R. Hofmann, F.-Y. Lo, D. Reuter, A.D. Wieck, E. Schuster, W. Keune, K. Westerholt, Applied Physics Letters (2005). date_created: 2019-03-27T10:21:16Z date_updated: 2022-01-06T07:03:58Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1996843 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Electron spin injection into GaAs from ferromagnetic contacts in remanence type: journal_article user_id: '42514' year: '2005' ... --- _id: '8690' article_number: '163117' author: - first_name: Stephan full_name: Lüttjohann, Stephan last_name: Lüttjohann - first_name: Cedrik full_name: Meier, Cedrik last_name: Meier - first_name: Axel full_name: Lorke, Axel last_name: Lorke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Lüttjohann S, Meier C, Lorke A, Reuter D, Wieck AD. Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. 2005. doi:10.1063/1.2112192 apa: Lüttjohann, S., Meier, C., Lorke, A., Reuter, D., & Wieck, A. D. (2005). Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra. Applied Physics Letters. https://doi.org/10.1063/1.2112192 bibtex: '@article{Lüttjohann_Meier_Lorke_Reuter_Wieck_2005, title={Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra}, DOI={10.1063/1.2112192}, number={163117}, journal={Applied Physics Letters}, author={Lüttjohann, Stephan and Meier, Cedrik and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Lüttjohann, Stephan, Cedrik Meier, Axel Lorke, Dirk Reuter, and Andreas D. Wieck. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2112192. ieee: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, 2005. mla: Lüttjohann, Stephan, et al. “Screening Effects in InAs Quantum-Dot Structures Observed by Photoluminescence and Capacitance-Voltage Spectra.” Applied Physics Letters, 163117, 2005, doi:10.1063/1.2112192. short: S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T10:39:18Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2112192 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra type: journal_article user_id: '42514' year: '2005' ... --- _id: '8691' article_number: '232108' author: - first_name: Boris full_name: Grbić, Boris last_name: Grbić - first_name: Renaud full_name: Leturcq, Renaud last_name: Leturcq - first_name: Klaus full_name: Ensslin, Klaus last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: Andreas D. full_name: Wieck, Andreas D. last_name: Wieck citation: ama: Grbić B, Leturcq R, Ensslin K, Reuter D, Wieck AD. Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. 2005. doi:10.1063/1.2139994 apa: Grbić, B., Leturcq, R., Ensslin, K., Reuter, D., & Wieck, A. D. (2005). Single-hole transistor in p-type GaAs∕AlGaAs heterostructures. Applied Physics Letters. https://doi.org/10.1063/1.2139994 bibtex: '@article{Grbić_Leturcq_Ensslin_Reuter_Wieck_2005, title={Single-hole transistor in p-type GaAs∕AlGaAs heterostructures}, DOI={10.1063/1.2139994}, number={232108}, journal={Applied Physics Letters}, author={Grbić, Boris and Leturcq, Renaud and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}, year={2005} }' chicago: Grbić, Boris, Renaud Leturcq, Klaus Ensslin, Dirk Reuter, and Andreas D. Wieck. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied Physics Letters, 2005. https://doi.org/10.1063/1.2139994. ieee: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole transistor in p-type GaAs∕AlGaAs heterostructures,” Applied Physics Letters, 2005. mla: Grbić, Boris, et al. “Single-Hole Transistor in p-Type GaAs∕AlGaAs Heterostructures.” Applied Physics Letters, 232108, 2005, doi:10.1063/1.2139994. short: B. Grbić, R. Leturcq, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2005). date_created: 2019-03-27T11:12:28Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.2139994 language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Single-hole transistor in p-type GaAs∕AlGaAs heterostructures type: journal_article user_id: '42514' year: '2005' ... --- _id: '29691' article_number: '152102' author: - first_name: V. full_name: Höink, V. last_name: Höink - first_name: Marc full_name: Sacher, Marc id: '26883' last_name: Sacher orcid: 0000-0001-6217-336X - first_name: J. full_name: Schmalhorst, J. last_name: Schmalhorst - first_name: G. full_name: Reiss, G. last_name: Reiss - first_name: D. full_name: Engel, D. last_name: Engel - first_name: D. full_name: Junk, D. last_name: Junk - first_name: A. full_name: Ehresmann, A. last_name: Ehresmann citation: ama: Höink V, Sacher M, Schmalhorst J, et al. Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. Applied Physics Letters. 2005;86(15). doi:10.1063/1.1899771 apa: Höink, V., Sacher, M., Schmalhorst, J., Reiss, G., Engel, D., Junk, D., & Ehresmann, A. (2005). Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias. Applied Physics Letters, 86(15), Article 152102. https://doi.org/10.1063/1.1899771 bibtex: '@article{Höink_Sacher_Schmalhorst_Reiss_Engel_Junk_Ehresmann_2005, title={Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias}, volume={86}, DOI={10.1063/1.1899771}, number={15152102}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Höink, V. and Sacher, Marc and Schmalhorst, J. and Reiss, G. and Engel, D. and Junk, D. and Ehresmann, A.}, year={2005} }' chicago: Höink, V., Marc Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, and A. Ehresmann. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified Exchange Bias.” Applied Physics Letters 86, no. 15 (2005). https://doi.org/10.1063/1.1899771. ieee: 'V. Höink et al., “Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias,” Applied Physics Letters, vol. 86, no. 15, Art. no. 152102, 2005, doi: 10.1063/1.1899771.' mla: Höink, V., et al. “Postannealing of Magnetic Tunnel Junctions with Ion-Bombardment-Modified Exchange Bias.” Applied Physics Letters, vol. 86, no. 15, 152102, AIP Publishing, 2005, doi:10.1063/1.1899771. short: V. Höink, M. Sacher, J. Schmalhorst, G. Reiss, D. Engel, D. Junk, A. Ehresmann, Applied Physics Letters 86 (2005). date_created: 2022-01-31T10:21:57Z date_updated: 2024-04-23T12:15:06Z department: - _id: '15' doi: 10.1063/1.1899771 extern: '1' intvolume: ' 86' issue: '15' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias type: journal_article user_id: '26883' volume: 86 year: '2005' ... --- _id: '39764' article_number: '241105' author: - first_name: Heinrich full_name: Matthias, Heinrich last_name: Matthias - first_name: Thorsten full_name: Röder, Thorsten last_name: Röder - first_name: Ralf B. full_name: Wehrspohn, Ralf B. last_name: Wehrspohn - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: Sven full_name: Matthias, Sven last_name: Matthias - first_name: Stephen J. full_name: Picken, Stephen J. last_name: Picken citation: ama: Matthias H, Röder T, Wehrspohn RB, Kitzerow H-S, Matthias S, Picken SJ. Spatially periodic liquid crystal director field appearing in a photonic crystal template. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2142100 apa: Matthias, H., Röder, T., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., & Picken, S. J. (2005). Spatially periodic liquid crystal director field appearing in a photonic crystal template. Applied Physics Letters, 87(24), Article 241105. https://doi.org/10.1063/1.2142100 bibtex: '@article{Matthias_Röder_Wehrspohn_Kitzerow_Matthias_Picken_2005, title={Spatially periodic liquid crystal director field appearing in a photonic crystal template}, volume={87}, DOI={10.1063/1.2142100}, number={24241105}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Matthias, Heinrich and Röder, Thorsten and Wehrspohn, Ralf B. and Kitzerow, Heinz-Siegfried and Matthias, Sven and Picken, Stephen J.}, year={2005} }' chicago: Matthias, Heinrich, Thorsten Röder, Ralf B. Wehrspohn, Heinz-Siegfried Kitzerow, Sven Matthias, and Stephen J. Picken. “Spatially Periodic Liquid Crystal Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2142100. ieee: 'H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and S. J. Picken, “Spatially periodic liquid crystal director field appearing in a photonic crystal template,” Applied Physics Letters, vol. 87, no. 24, Art. no. 241105, 2005, doi: 10.1063/1.2142100.' mla: Matthias, Heinrich, et al. “Spatially Periodic Liquid Crystal Director Field Appearing in a Photonic Crystal Template.” Applied Physics Letters, vol. 87, no. 24, 241105, AIP Publishing, 2005, doi:10.1063/1.2142100. short: H. Matthias, T. Röder, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, S.J. Picken, Applied Physics Letters 87 (2005). date_created: 2023-01-24T19:10:38Z date_updated: 2023-01-24T19:11:03Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2142100 intvolume: ' 87' issue: '24' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Spatially periodic liquid crystal director field appearing in a photonic crystal template type: journal_article user_id: '254' volume: 87 year: '2005' ... --- _id: '39767' article_number: '241108' author: - first_name: G. full_name: Mertens, G. last_name: Mertens - first_name: R. B. full_name: Wehrspohn, R. B. last_name: Wehrspohn - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: S. full_name: Matthias, S. last_name: Matthias - first_name: C. full_name: Jamois, C. last_name: Jamois - first_name: U. full_name: Gösele, U. last_name: Gösele citation: ama: Mertens G, Wehrspohn RB, Kitzerow H-S, Matthias S, Jamois C, Gösele U. Tunable defect mode in a three-dimensional photonic crystal. Applied Physics Letters. 2005;87(24). doi:10.1063/1.2139846 apa: Mertens, G., Wehrspohn, R. B., Kitzerow, H.-S., Matthias, S., Jamois, C., & Gösele, U. (2005). Tunable defect mode in a three-dimensional photonic crystal. Applied Physics Letters, 87(24), Article 241108. https://doi.org/10.1063/1.2139846 bibtex: '@article{Mertens_Wehrspohn_Kitzerow_Matthias_Jamois_Gösele_2005, title={Tunable defect mode in a three-dimensional photonic crystal}, volume={87}, DOI={10.1063/1.2139846}, number={24241108}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mertens, G. and Wehrspohn, R. B. and Kitzerow, Heinz-Siegfried and Matthias, S. and Jamois, C. and Gösele, U.}, year={2005} }' chicago: Mertens, G., R. B. Wehrspohn, Heinz-Siegfried Kitzerow, S. Matthias, C. Jamois, and U. Gösele. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” Applied Physics Letters 87, no. 24 (2005). https://doi.org/10.1063/1.2139846. ieee: 'G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,” Applied Physics Letters, vol. 87, no. 24, Art. no. 241108, 2005, doi: 10.1063/1.2139846.' mla: Mertens, G., et al. “Tunable Defect Mode in a Three-Dimensional Photonic Crystal.” Applied Physics Letters, vol. 87, no. 24, 241108, AIP Publishing, 2005, doi:10.1063/1.2139846. short: G. Mertens, R.B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, U. Gösele, Applied Physics Letters 87 (2005). date_created: 2023-01-24T19:12:37Z date_updated: 2023-01-24T19:13:14Z department: - _id: '313' - _id: '638' doi: 10.1063/1.2139846 intvolume: ' 87' issue: '24' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Tunable defect mode in a three-dimensional photonic crystal type: journal_article user_id: '254' volume: 87 year: '2005' ... --- _id: '39768' article_number: '031104' author: - first_name: Lutz full_name: Paelke, Lutz last_name: Paelke - first_name: Heinz-Siegfried full_name: Kitzerow, Heinz-Siegfried id: '254' last_name: Kitzerow - first_name: Peter full_name: Strohriegl, Peter last_name: Strohriegl citation: ama: Paelke L, Kitzerow H-S, Strohriegl P. Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters. 2005;86(3). doi:10.1063/1.1852082 apa: Paelke, L., Kitzerow, H.-S., & Strohriegl, P. (2005). Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane. Applied Physics Letters, 86(3), Article 031104. https://doi.org/10.1063/1.1852082 bibtex: '@article{Paelke_Kitzerow_Strohriegl_2005, title={Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane}, volume={86}, DOI={10.1063/1.1852082}, number={3031104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Paelke, Lutz and Kitzerow, Heinz-Siegfried and Strohriegl, Peter}, year={2005} }' chicago: Paelke, Lutz, Heinz-Siegfried Kitzerow, and Peter Strohriegl. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied Physics Letters 86, no. 3 (2005). https://doi.org/10.1063/1.1852082. ieee: 'L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,” Applied Physics Letters, vol. 86, no. 3, Art. no. 031104, 2005, doi: 10.1063/1.1852082.' mla: Paelke, Lutz, et al. “Photorefractive Polymer-Dispersed Liquid Crystal Based on a Photoconducting Polysiloxane.” Applied Physics Letters, vol. 86, no. 3, 031104, AIP Publishing, 2005, doi:10.1063/1.1852082. short: L. Paelke, H.-S. Kitzerow, P. Strohriegl, Applied Physics Letters 86 (2005). date_created: 2023-01-24T19:13:33Z date_updated: 2023-01-24T19:13:50Z department: - _id: '313' - _id: '638' doi: 10.1063/1.1852082 intvolume: ' 86' issue: '3' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane type: journal_article user_id: '254' volume: 86 year: '2005' ... --- _id: '23507' abstract: - lang: eng text: "A microscopic model is used to analyze gain and loss properties of (GaIn)(NAs)∕GaAs quantum wells in the 1.3–1.55μm range, including Auger and radiative recombination. The calculations show that, as long as good material quality can be achieved, growing highly compressively strained samples is preferable due to their specific band structure properties. Optimum laser operation is possible slightly above a peak gain of 1000cm−1\r\n⁠." article_number: '261109' author: - first_name: C. full_name: Schlichenmaier, C. last_name: Schlichenmaier - first_name: A. full_name: Thränhardt, A. last_name: Thränhardt - first_name: Torsten full_name: Meier, Torsten id: '344' last_name: Meier orcid: 0000-0001-8864-2072 - first_name: S. W. full_name: Koch, S. W. last_name: Koch - first_name: W. W. full_name: Chow, W. W. last_name: Chow - first_name: J. full_name: Hader, J. last_name: Hader - first_name: J. V. full_name: Moloney, J. V. last_name: Moloney citation: ama: Schlichenmaier C, Thränhardt A, Meier T, et al. Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters. 2005;87(26). doi:10.1063/1.2149371 apa: Schlichenmaier, C., Thränhardt, A., Meier, T., Koch, S. W., Chow, W. W., Hader, J., & Moloney, J. V. (2005). Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range. Applied Physics Letters, 87(26), Article 261109. https://doi.org/10.1063/1.2149371 bibtex: '@article{Schlichenmaier_Thränhardt_Meier_Koch_Chow_Hader_Moloney_2005, title={Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range}, volume={87}, DOI={10.1063/1.2149371}, number={26261109}, journal={Applied Physics Letters}, author={Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Koch, S. W. and Chow, W. W. and Hader, J. and Moloney, J. V.}, year={2005} }' chicago: Schlichenmaier, C., A. Thränhardt, Torsten Meier, S. W. Koch, W. W. Chow, J. Hader, and J. V. Moloney. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters 87, no. 26 (2005). https://doi.org/10.1063/1.2149371. ieee: 'C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,” Applied Physics Letters, vol. 87, no. 26, Art. no. 261109, 2005, doi: 10.1063/1.2149371.' mla: Schlichenmaier, C., et al. “Gain and Carrier Losses of (GaIn)(NAs) Heterostructures in the 1300–1550 Nm Range.” Applied Physics Letters, vol. 87, no. 26, 261109, 2005, doi:10.1063/1.2149371. short: C. Schlichenmaier, A. Thränhardt, T. Meier, S.W. Koch, W.W. Chow, J. Hader, J.V. Moloney, Applied Physics Letters 87 (2005). date_created: 2021-08-24T09:29:41Z date_updated: 2023-04-24T06:00:23Z department: - _id: '15' - _id: '170' - _id: '293' doi: 10.1063/1.2149371 extern: '1' intvolume: ' 87' issue: '26' language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range type: journal_article user_id: '49063' volume: 87 year: '2005' ... --- _id: '39574' article_number: '024104' author: - first_name: M. full_name: Scharnberg, M. last_name: Scharnberg - first_name: J. full_name: Hu, J. last_name: Hu - first_name: J. full_name: Kanzow, J. last_name: Kanzow - first_name: K. full_name: Rätzke, K. last_name: Rätzke - first_name: R. full_name: Adelung, R. last_name: Adelung - first_name: F. full_name: Faupel, F. last_name: Faupel - first_name: C. full_name: Pannemann, C. last_name: Pannemann - first_name: Ulrich full_name: Hilleringmann, Ulrich id: '20179' last_name: Hilleringmann - first_name: S. full_name: Meyer, S. last_name: Meyer - first_name: J. full_name: Pflaum, J. last_name: Pflaum citation: ama: Scharnberg M, Hu J, Kanzow J, et al. Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters. 2005;86(2). doi:10.1063/1.1849845 apa: Scharnberg, M., Hu, J., Kanzow, J., Rätzke, K., Adelung, R., Faupel, F., Pannemann, C., Hilleringmann, U., Meyer, S., & Pflaum, J. (2005). Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Applied Physics Letters, 86(2), Article 024104. https://doi.org/10.1063/1.1849845 bibtex: '@article{Scharnberg_Hu_Kanzow_Rätzke_Adelung_Faupel_Pannemann_Hilleringmann_Meyer_Pflaum_2005, title={Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics}, volume={86}, DOI={10.1063/1.1849845}, number={2024104}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Scharnberg, M. and Hu, J. and Kanzow, J. and Rätzke, K. and Adelung, R. and Faupel, F. and Pannemann, C. and Hilleringmann, Ulrich and Meyer, S. and Pflaum, J.}, year={2005} }' chicago: Scharnberg, M., J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, Ulrich Hilleringmann, S. Meyer, and J. Pflaum. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied Physics Letters 86, no. 2 (2005). https://doi.org/10.1063/1.1849845. ieee: 'M. Scharnberg et al., “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,” Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi: 10.1063/1.1849845.' mla: Scharnberg, M., et al. “Radiotracer Measurements as a Sensitive Tool for the Detection of Metal Penetration in Molecular-Based Organic Electronics.” Applied Physics Letters, vol. 86, no. 2, 024104, AIP Publishing, 2005, doi:10.1063/1.1849845. short: M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters 86 (2005). date_created: 2023-01-24T12:21:59Z date_updated: 2023-03-22T10:34:05Z department: - _id: '59' doi: 10.1063/1.1849845 intvolume: ' 86' issue: '2' keyword: - Physics and Astronomy (miscellaneous) language: - iso: eng publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics type: journal_article user_id: '20179' volume: 86 year: '2005' ... --- _id: '7678' author: - first_name: E. D. full_name: Haberer, E. D. last_name: Haberer - first_name: R. full_name: Sharma, R. last_name: Sharma - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 - first_name: A. R. full_name: Stonas, A. R. last_name: Stonas - first_name: S. full_name: Nakamura, S. last_name: Nakamura - first_name: S. P. full_name: DenBaars, S. P. last_name: DenBaars - first_name: E. L. full_name: Hu, E. L. last_name: Hu citation: ama: Haberer ED, Sharma R, Meier C, et al. Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. Applied Physics Letters. 2004;85(22):5179-5181. doi:10.1063/1.1829167 apa: Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars, S. P., & Hu, E. L. (2004). Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching. Applied Physics Letters, 85(22), 5179–5181. https://doi.org/10.1063/1.1829167 bibtex: '@article{Haberer_Sharma_Meier_Stonas_Nakamura_DenBaars_Hu_2004, title={Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching}, volume={85}, DOI={10.1063/1.1829167}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Haberer, E. D. and Sharma, R. and Meier, Cedrik and Stonas, A. R. and Nakamura, S. and DenBaars, S. P. and Hu, E. L.}, year={2004}, pages={5179–5181} }' chicago: 'Haberer, E. D., R. Sharma, Cedrik Meier, A. R. Stonas, S. Nakamura, S. P. DenBaars, and E. L. Hu. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters 85, no. 22 (2004): 5179–81. https://doi.org/10.1063/1.1829167.' ieee: E. D. Haberer et al., “Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching,” Applied Physics Letters, vol. 85, no. 22, pp. 5179–5181, 2004. mla: Haberer, E. D., et al. “Free-Standing, Optically Pumped, GaN∕InGaN Microdisk Lasers Fabricated by Photoelectrochemical Etching.” Applied Physics Letters, vol. 85, no. 22, AIP Publishing, 2004, pp. 5179–81, doi:10.1063/1.1829167. short: E.D. Haberer, R. Sharma, C. Meier, A.R. Stonas, S. Nakamura, S.P. DenBaars, E.L. Hu, Applied Physics Letters 85 (2004) 5179–5181. date_created: 2019-02-13T14:47:45Z date_updated: 2022-01-06T07:03:43Z department: - _id: '15' doi: 10.1063/1.1829167 extern: '1' intvolume: ' 85' issue: '22' language: - iso: eng page: 5179-5181 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published publisher: AIP Publishing status: public title: Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching type: journal_article user_id: '20798' volume: 85 year: '2004' ... --- _id: '8696' author: - first_name: S. full_name: Petrosyan, S. last_name: Petrosyan - first_name: A. full_name: Yesayan, A. last_name: Yesayan - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Petrosyan S, Yesayan A, Reuter D, Wieck AD. The linearly graded two-dimensional p–n junction. Applied Physics Letters. 2004:3313-3315. doi:10.1063/1.1736316 apa: Petrosyan, S., Yesayan, A., Reuter, D., & Wieck, A. D. (2004). The linearly graded two-dimensional p–n junction. Applied Physics Letters, 3313–3315. https://doi.org/10.1063/1.1736316 bibtex: '@article{Petrosyan_Yesayan_Reuter_Wieck_2004, title={The linearly graded two-dimensional p–n junction}, DOI={10.1063/1.1736316}, journal={Applied Physics Letters}, author={Petrosyan, S. and Yesayan, A. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={3313–3315} }' chicago: Petrosyan, S., A. Yesayan, Dirk Reuter, and A. D. Wieck. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, 3313–15. https://doi.org/10.1063/1.1736316. ieee: S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315, 2004. mla: Petrosyan, S., et al. “The Linearly Graded Two-Dimensional p–n Junction.” Applied Physics Letters, 2004, pp. 3313–15, doi:10.1063/1.1736316. short: S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 3313–3315. date_created: 2019-03-27T11:43:00Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1736316 language: - iso: eng page: 3313-3315 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: The linearly graded two-dimensional p–n junction type: journal_article user_id: '42514' year: '2004' ... --- _id: '8711' author: - first_name: B. full_name: Grbić, B. last_name: Grbić - first_name: C. full_name: Ellenberger, C. last_name: Ellenberger - first_name: T. full_name: Ihn, T. last_name: Ihn - first_name: K. full_name: Ensslin, K. last_name: Ensslin - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A. D. full_name: Wieck, A. D. last_name: Wieck citation: ama: Grbić B, Ellenberger C, Ihn T, Ensslin K, Reuter D, Wieck AD. Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters. 2004:2277-2279. doi:10.1063/1.1781750 apa: Grbić, B., Ellenberger, C., Ihn, T., Ensslin, K., Reuter, D., & Wieck, A. D. (2004). Magnetotransport in C-doped AlGaAs heterostructures. Applied Physics Letters, 2277–2279. https://doi.org/10.1063/1.1781750 bibtex: '@article{Grbić_Ellenberger_Ihn_Ensslin_Reuter_Wieck_2004, title={Magnetotransport in C-doped AlGaAs heterostructures}, DOI={10.1063/1.1781750}, journal={Applied Physics Letters}, author={Grbić, B. and Ellenberger, C. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A. D.}, year={2004}, pages={2277–2279} }' chicago: Grbić, B., C. Ellenberger, T. Ihn, K. Ensslin, Dirk Reuter, and A. D. Wieck. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, 2277–79. https://doi.org/10.1063/1.1781750. ieee: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters, pp. 2277–2279, 2004. mla: Grbić, B., et al. “Magnetotransport in C-Doped AlGaAs Heterostructures.” Applied Physics Letters, 2004, pp. 2277–79, doi:10.1063/1.1781750. short: B. Grbić, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 2277–2279. date_created: 2019-03-27T12:21:18Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1063/1.1781750 language: - iso: eng page: 2277-2279 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Magnetotransport in C-doped AlGaAs heterostructures type: journal_article user_id: '42514' year: '2004' ... --- _id: '23514' abstract: - lang: eng text: A theory is presented which couples a dynamical laser model to a fully microscopic calculation of scattering effects. Calculations for two optically pumped GaInNAs laser structures show how this approach can be used to analyze nonequilibrium and dynamical laser properties over a wide range of system parameters. author: - first_name: A. full_name: Thränhardt, A. last_name: Thränhardt - first_name: S. full_name: Becker, S. last_name: Becker - first_name: C. full_name: Schlichenmaier, C. last_name: Schlichenmaier - first_name: I. full_name: Kuznetsova, I. last_name: Kuznetsova - first_name: Torsten full_name: Meier, Torsten id: '344' last_name: Meier orcid: 0000-0001-8864-2072 - first_name: S. W. full_name: Koch, S. W. last_name: Koch - first_name: J. full_name: Hader, J. last_name: Hader - first_name: J. V. full_name: Moloney, J. V. last_name: Moloney - first_name: W. W. full_name: Chow, W. W. last_name: Chow citation: ama: Thränhardt A, Becker S, Schlichenmaier C, et al. Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters. 2004;85(23):5526-5528. doi:10.1063/1.1831570 apa: Thränhardt, A., Becker, S., Schlichenmaier, C., Kuznetsova, I., Meier, T., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2004). Nonequilibrium gain in optically pumped GaInNAs laser structures. Applied Physics Letters, 85(23), 5526–5528. https://doi.org/10.1063/1.1831570 bibtex: '@article{Thränhardt_Becker_Schlichenmaier_Kuznetsova_Meier_Koch_Hader_Moloney_Chow_2004, title={Nonequilibrium gain in optically pumped GaInNAs laser structures}, volume={85}, DOI={10.1063/1.1831570}, number={23}, journal={Applied Physics Letters}, author={Thränhardt, A. and Becker, S. and Schlichenmaier, C. and Kuznetsova, I. and Meier, Torsten and Koch, S. W. and Hader, J. and Moloney, J. V. and Chow, W. W.}, year={2004}, pages={5526–5528} }' chicago: 'Thränhardt, A., S. Becker, C. Schlichenmaier, I. Kuznetsova, Torsten Meier, S. W. Koch, J. Hader, J. V. Moloney, and W. W. Chow. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters 85, no. 23 (2004): 5526–28. https://doi.org/10.1063/1.1831570.' ieee: 'A. Thränhardt et al., “Nonequilibrium gain in optically pumped GaInNAs laser structures,” Applied Physics Letters, vol. 85, no. 23, pp. 5526–5528, 2004, doi: 10.1063/1.1831570.' mla: Thränhardt, A., et al. “Nonequilibrium Gain in Optically Pumped GaInNAs Laser Structures.” Applied Physics Letters, vol. 85, no. 23, 2004, pp. 5526–28, doi:10.1063/1.1831570. short: A. Thränhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, W.W. Chow, Applied Physics Letters 85 (2004) 5526–5528. date_created: 2021-08-24T09:46:22Z date_updated: 2023-04-24T06:23:26Z department: - _id: '15' - _id: '170' - _id: '293' doi: 10.1063/1.1831570 extern: '1' intvolume: ' 85' issue: '23' language: - iso: eng page: 5526-5528 publication: Applied Physics Letters publication_identifier: issn: - 0003-6951 - 1077-3118 publication_status: published status: public title: Nonequilibrium gain in optically pumped GaInNAs laser structures type: journal_article user_id: '49063' volume: 85 year: '2004' ...