[{"status":"public","page":"6605-6607","publisher":"AIP Publishing","_id":"7693","user_id":"20798","volume":86,"citation":{"ieee":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, and A. D. Wieck, “Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells,” <i>Journal of Applied Physics</i>, vol. 86, no. 11, pp. 6605–6607, 1999.","apa":"Eshlaghi, S., Meier, C., Suter, D., Reuter, D., &#38; Wieck, A. D. (1999). Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>, <i>86</i>(11), 6605–6607. <a href=\"https://doi.org/10.1063/1.371720\">https://doi.org/10.1063/1.371720</a>","short":"S. Eshlaghi, C. Meier, D. Suter, D. Reuter, A.D. Wieck, Journal of Applied Physics 86 (1999) 6605–6607.","chicago":"Eshlaghi, Soheyla, Cedrik Meier, Dieter Suter, D. Reuter, and A. D. Wieck. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i> 86, no. 11 (1999): 6605–7. <a href=\"https://doi.org/10.1063/1.371720\">https://doi.org/10.1063/1.371720</a>.","mla":"Eshlaghi, Soheyla, et al. “Depth Profile of the Implantation-Enhanced Intermixing of Ga+ Focused Ion Beam in AlAs/GaAs Quantum Wells.” <i>Journal of Applied Physics</i>, vol. 86, no. 11, AIP Publishing, 1999, pp. 6605–07, doi:<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>.","bibtex":"@article{Eshlaghi_Meier_Suter_Reuter_Wieck_1999, title={Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells}, volume={86}, DOI={<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Eshlaghi, Soheyla and Meier, Cedrik and Suter, Dieter and Reuter, D. and Wieck, A. D.}, year={1999}, pages={6605–6607} }","ama":"Eshlaghi S, Meier C, Suter D, Reuter D, Wieck AD. Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells. <i>Journal of Applied Physics</i>. 1999;86(11):6605-6607. doi:<a href=\"https://doi.org/10.1063/1.371720\">10.1063/1.371720</a>"},"title":"Depth profile of the implantation-enhanced intermixing of Ga+ focused ion beam in AlAs/GaAs quantum wells","year":"1999","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"first_name":"Soheyla","last_name":"Eshlaghi","full_name":"Eshlaghi, Soheyla"},{"first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798"},{"first_name":"Dieter","last_name":"Suter","full_name":"Suter, Dieter"},{"first_name":"D.","last_name":"Reuter","full_name":"Reuter, D."},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication_status":"published","date_updated":"2022-01-06T07:03:44Z","intvolume":"        86","language":[{"iso":"eng"}],"doi":"10.1063/1.371720","publication":"Journal of Applied Physics","issue":"11","extern":"1","date_created":"2019-02-13T14:59:37Z","type":"journal_article","department":[{"_id":"15"}]},{"doi":"10.1063/1.356471","language":[{"iso":"eng"}],"date_updated":"2023-01-26T11:49:09Z","publication_status":"published","intvolume":"        75","title":"Bistability in polymer‐dispersed ferroelectric liquid crystals","year":"1994","publication_identifier":{"issn":["0021-8979","1089-7550"]},"author":[{"first_name":"Henning","last_name":"Molsen","full_name":"Molsen, Henning"},{"id":"254","full_name":"Kitzerow, Heinz-Siegfried","last_name":"Kitzerow","first_name":"Heinz-Siegfried"}],"type":"journal_article","keyword":["General Physics and Astronomy"],"department":[{"_id":"313"}],"date_created":"2023-01-26T11:06:23Z","extern":"1","issue":"2","publication":"Journal of Applied Physics","user_id":"254","volume":75,"page":"710-716","_id":"40322","publisher":"AIP Publishing","status":"public","citation":{"chicago":"Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” <i>Journal of Applied Physics</i> 75, no. 2 (1994): 710–16. <a href=\"https://doi.org/10.1063/1.356471\">https://doi.org/10.1063/1.356471</a>.","short":"H. Molsen, H.-S. Kitzerow, Journal of Applied Physics 75 (1994) 710–716.","apa":"Molsen, H., &#38; Kitzerow, H.-S. (1994). Bistability in polymer‐dispersed ferroelectric liquid crystals. <i>Journal of Applied Physics</i>, <i>75</i>(2), 710–716. <a href=\"https://doi.org/10.1063/1.356471\">https://doi.org/10.1063/1.356471</a>","ieee":"H. Molsen and H.-S. Kitzerow, “Bistability in polymer‐dispersed ferroelectric liquid crystals,” <i>Journal of Applied Physics</i>, vol. 75, no. 2, pp. 710–716, 1994, doi: <a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>.","ama":"Molsen H, Kitzerow H-S. Bistability in polymer‐dispersed ferroelectric liquid crystals. <i>Journal of Applied Physics</i>. 1994;75(2):710-716. doi:<a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>","bibtex":"@article{Molsen_Kitzerow_1994, title={Bistability in polymer‐dispersed ferroelectric liquid crystals}, volume={75}, DOI={<a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Molsen, Henning and Kitzerow, Heinz-Siegfried}, year={1994}, pages={710–716} }","mla":"Molsen, Henning, and Heinz-Siegfried Kitzerow. “Bistability in Polymer‐dispersed Ferroelectric Liquid Crystals.” <i>Journal of Applied Physics</i>, vol. 75, no. 2, AIP Publishing, 1994, pp. 710–16, doi:<a href=\"https://doi.org/10.1063/1.356471\">10.1063/1.356471</a>."}}]
