--- _id: '13796' author: - first_name: Paulo V. full_name: Santos, Paulo V. last_name: Santos - first_name: N. full_name: Esser, N. last_name: Esser - first_name: J. full_name: Groenen, J. last_name: Groenen - first_name: M. full_name: Cardona, M. last_name: Cardona - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt citation: ama: Santos PV, Esser N, Groenen J, Cardona M, Schmidt WG, Bechstedt F. Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(24):17379-17385. doi:10.1103/physrevb.52.17379 apa: Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., & Bechstedt, F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(24), 17379–17385. https://doi.org/10.1103/physrevb.52.17379 bibtex: '@article{Santos_Esser_Groenen_Cardona_Schmidt_Bechstedt_1995, title={Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={10.1103/physrevb.52.17379}, number={24}, journal={Physical Review B}, author={Santos, Paulo V. and Esser, N. and Groenen, J. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17379–17385} }' chicago: 'Santos, Paulo V., N. Esser, J. Groenen, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110) Surfaces.” Physical Review B 52, no. 24 (1995): 17379–85. https://doi.org/10.1103/physrevb.52.17379.' ieee: P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995. mla: Santos, Paulo V., et al. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110) Surfaces.” Physical Review B, vol. 52, no. 24, 1995, pp. 17379–85, doi:10.1103/physrevb.52.17379. short: P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385. date_created: 2019-10-10T16:18:55Z date_updated: 2022-01-06T06:51:44Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.52.17379 funded_apc: '1' intvolume: ' 52' issue: '24' language: - iso: eng page: 17379-17385 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces type: journal_article user_id: '16199' volume: 52 year: '1995' ... --- _id: '13797' author: - first_name: Paulo V. full_name: Santos, Paulo V. last_name: Santos - first_name: N. full_name: Esser, N. last_name: Esser - first_name: M. full_name: Cardona, M. last_name: Cardona - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt citation: ama: Santos PV, Esser N, Cardona M, Schmidt WG, Bechstedt F. Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(16):12158-12167. doi:10.1103/physrevb.52.12158 apa: Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., & Bechstedt, F. (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(16), 12158–12167. https://doi.org/10.1103/physrevb.52.12158 bibtex: '@article{Santos_Esser_Cardona_Schmidt_Bechstedt_1995, title={Optical properties of Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={10.1103/physrevb.52.12158}, number={16}, journal={Physical Review B}, author={Santos, Paulo V. and Esser, N. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={12158–12167} }' chicago: 'Santos, Paulo V., N. Esser, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt. “Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” Physical Review B 52, no. 16 (1995): 12158–67. https://doi.org/10.1103/physrevb.52.12158.' ieee: P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995. mla: Santos, Paulo V., et al. “Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” Physical Review B, vol. 52, no. 16, 1995, pp. 12158–67, doi:10.1103/physrevb.52.12158. short: P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167. date_created: 2019-10-10T16:21:14Z date_updated: 2022-01-06T06:51:44Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.52.12158 intvolume: ' 52' issue: '16' language: - iso: eng page: 12158-12167 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Optical properties of Sb-terminated GaAs and InP (110) surfaces type: journal_article user_id: '16199' volume: 52 year: '1995' ... --- _id: '13798' author: - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt - first_name: G. P. full_name: Srivastava, G. P. last_name: Srivastava citation: ama: Schmidt WG, Bechstedt F, Srivastava GP. III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B. 1995;52(3):2001-2007. doi:10.1103/physrevb.52.2001 apa: Schmidt, W. G., Bechstedt, F., & Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B, 52(3), 2001–2007. https://doi.org/10.1103/physrevb.52.2001 bibtex: '@article{Schmidt_Bechstedt_Srivastava_1995, title={III-V(110) surface dynamics from anab initiofrozen-phonon approach}, volume={52}, DOI={10.1103/physrevb.52.2001}, number={3}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F. and Srivastava, G. P.}, year={1995}, pages={2001–2007} }' chicago: 'Schmidt, Wolf Gero, F. Bechstedt, and G. P. Srivastava. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon Approach.” Physical Review B 52, no. 3 (1995): 2001–7. https://doi.org/10.1103/physrevb.52.2001.' ieee: W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995. mla: Schmidt, Wolf Gero, et al. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon Approach.” Physical Review B, vol. 52, no. 3, 1995, pp. 2001–07, doi:10.1103/physrevb.52.2001. short: W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007. date_created: 2019-10-10T16:24:49Z date_updated: 2022-01-06T06:51:44Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.52.2001 funded_apc: '1' intvolume: ' 52' issue: '3' language: - iso: eng page: 2001-2007 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: III-V(110) surface dynamics from anab initiofrozen-phonon approach type: journal_article user_id: '16199' volume: 52 year: '1995' ... --- _id: '13850' author: - first_name: C. full_name: Kress, C. last_name: Kress - first_name: M. full_name: Fiedler, M. last_name: Fiedler - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt citation: ama: Kress C, Fiedler M, Schmidt WG, Bechstedt F. Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B. 1995;50(23):17697-17700. doi:10.1103/physrevb.50.17697 apa: Kress, C., Fiedler, M., Schmidt, W. G., & Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B, 50(23), 17697–17700. https://doi.org/10.1103/physrevb.50.17697 bibtex: '@article{Kress_Fiedler_Schmidt_Bechstedt_1995, title={Geometrical and electronic structure of the reconstructed diamond (100) surface}, volume={50}, DOI={10.1103/physrevb.50.17697}, number={23}, journal={Physical Review B}, author={Kress, C. and Fiedler, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17697–17700} }' chicago: 'Kress, C., M. Fiedler, Wolf Gero Schmidt, and F. Bechstedt. “Geometrical and Electronic Structure of the Reconstructed Diamond (100) Surface.” Physical Review B 50, no. 23 (1995): 17697–700. https://doi.org/10.1103/physrevb.50.17697.' ieee: C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995. mla: Kress, C., et al. “Geometrical and Electronic Structure of the Reconstructed Diamond (100) Surface.” Physical Review B, vol. 50, no. 23, 1995, pp. 17697–700, doi:10.1103/physrevb.50.17697. short: C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700. date_created: 2019-10-15T09:56:32Z date_updated: 2022-01-06T06:51:45Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.50.17697 intvolume: ' 50' issue: '23' language: - iso: eng page: 17697-17700 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Geometrical and electronic structure of the reconstructed diamond (100) surface type: journal_article user_id: '16199' volume: 50 year: '1995' ... --- _id: '13851' author: - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt citation: ama: Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B. 1995;50(23):17651-17654. doi:10.1103/physrevb.50.17651 apa: Schmidt, W. G., & Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654. https://doi.org/10.1103/physrevb.50.17651 bibtex: '@article{Schmidt_Bechstedt_1995, title={Exchange reactions versus adsorption geometries for Se/GaAs(110)}, volume={50}, DOI={10.1103/physrevb.50.17651}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17651–17654} }' chicago: 'Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” Physical Review B 50, no. 23 (1995): 17651–54. https://doi.org/10.1103/physrevb.50.17651.' ieee: W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995. mla: Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption Geometries for Se/GaAs(110).” Physical Review B, vol. 50, no. 23, 1995, pp. 17651–54, doi:10.1103/physrevb.50.17651. short: W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654. date_created: 2019-10-15T09:59:11Z date_updated: 2022-01-06T06:51:45Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.50.17651 intvolume: ' 50' issue: '23' language: - iso: eng page: 17651-17654 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Exchange reactions versus adsorption geometries for Se/GaAs(110) type: journal_article user_id: '16199' volume: 50 year: '1995' ... --- _id: '13852' author: - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt citation: ama: 'Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. Physical Review B. 1995;50(23):17280-17291. doi:10.1103/physrevb.50.17280' apa: 'Schmidt, W. G., & Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291. https://doi.org/10.1103/physrevb.50.17280' bibtex: '@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): Atomic and electronic structure}, volume={50}, DOI={10.1103/physrevb.50.17280}, number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17280–17291} }' chicago: 'Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” Physical Review B 50, no. 23 (1995): 17280–91. https://doi.org/10.1103/physrevb.50.17280.' ieee: 'W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.' mla: 'Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic Structure.” Physical Review B, vol. 50, no. 23, 1995, pp. 17280–91, doi:10.1103/physrevb.50.17280.' short: W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291. date_created: 2019-10-15T10:00:45Z date_updated: 2022-01-06T06:51:45Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.50.17280 intvolume: ' 50' issue: '23' language: - iso: eng page: 17280-17291 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: 'Se/GaAs(110): Atomic and electronic structure' type: journal_article user_id: '16199' volume: 50 year: '1995' ... --- _id: '13856' author: - first_name: Wolf Gero full_name: Schmidt, Wolf Gero id: '468' last_name: Schmidt orcid: 0000-0002-2717-5076 - first_name: B. full_name: Wenzien, B. last_name: Wenzien - first_name: F. full_name: Bechstedt, F. last_name: Bechstedt citation: ama: Schmidt WG, Wenzien B, Bechstedt F. Chemisorption of antimony on GaAs(110). Physical Review B. 1994;49(7):4731-4744. doi:10.1103/physrevb.49.4731 apa: Schmidt, W. G., Wenzien, B., & Bechstedt, F. (1994). Chemisorption of antimony on GaAs(110). Physical Review B, 49(7), 4731–4744. https://doi.org/10.1103/physrevb.49.4731 bibtex: '@article{Schmidt_Wenzien_Bechstedt_1994, title={Chemisorption of antimony on GaAs(110)}, volume={49}, DOI={10.1103/physrevb.49.4731}, number={7}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Wenzien, B. and Bechstedt, F.}, year={1994}, pages={4731–4744} }' chicago: 'Schmidt, Wolf Gero, B. Wenzien, and F. Bechstedt. “Chemisorption of Antimony on GaAs(110).” Physical Review B 49, no. 7 (1994): 4731–44. https://doi.org/10.1103/physrevb.49.4731.' ieee: W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994. mla: Schmidt, Wolf Gero, et al. “Chemisorption of Antimony on GaAs(110).” Physical Review B, vol. 49, no. 7, 1994, pp. 4731–44, doi:10.1103/physrevb.49.4731. short: W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744. date_created: 2019-10-15T10:08:58Z date_updated: 2022-01-06T06:51:45Z department: - _id: '15' - _id: '170' - _id: '295' doi: 10.1103/physrevb.49.4731 intvolume: ' 49' issue: '7' language: - iso: eng page: 4731-4744 publication: Physical Review B publication_identifier: issn: - 0163-1829 - 1095-3795 publication_status: published status: public title: Chemisorption of antimony on GaAs(110) type: journal_article user_id: '16199' volume: 49 year: '1994' ...