---
_id: '13796'
author:
- first_name: Paulo V.
full_name: Santos, Paulo V.
last_name: Santos
- first_name: N.
full_name: Esser, N.
last_name: Esser
- first_name: J.
full_name: Groenen, J.
last_name: Groenen
- first_name: M.
full_name: Cardona, M.
last_name: Cardona
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
citation:
ama: Santos PV, Esser N, Groenen J, Cardona M, Schmidt WG, Bechstedt F. Hydrogen
interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review
B. 1995;52(24):17379-17385. doi:10.1103/physrevb.52.17379
apa: Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., & Bechstedt,
F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces.
Physical Review B, 52(24), 17379–17385. https://doi.org/10.1103/physrevb.52.17379
bibtex: '@article{Santos_Esser_Groenen_Cardona_Schmidt_Bechstedt_1995, title={Hydrogen
interaction with Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={10.1103/physrevb.52.17379},
number={24}, journal={Physical Review B}, author={Santos, Paulo V. and Esser,
N. and Groenen, J. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.},
year={1995}, pages={17379–17385} }'
chicago: 'Santos, Paulo V., N. Esser, J. Groenen, M. Cardona, Wolf Gero Schmidt,
and F. Bechstedt. “Hydrogen Interaction with Sb-Terminated GaAs and InP (110)
Surfaces.” Physical Review B 52, no. 24 (1995): 17379–85. https://doi.org/10.1103/physrevb.52.17379.'
ieee: P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt,
“Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical
Review B, vol. 52, no. 24, pp. 17379–17385, 1995.
mla: Santos, Paulo V., et al. “Hydrogen Interaction with Sb-Terminated GaAs and
InP (110) Surfaces.” Physical Review B, vol. 52, no. 24, 1995, pp. 17379–85,
doi:10.1103/physrevb.52.17379.
short: P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt,
Physical Review B 52 (1995) 17379–17385.
date_created: 2019-10-10T16:18:55Z
date_updated: 2022-01-06T06:51:44Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.52.17379
funded_apc: '1'
intvolume: ' 52'
issue: '24'
language:
- iso: eng
page: 17379-17385
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
type: journal_article
user_id: '16199'
volume: 52
year: '1995'
...
---
_id: '13797'
author:
- first_name: Paulo V.
full_name: Santos, Paulo V.
last_name: Santos
- first_name: N.
full_name: Esser, N.
last_name: Esser
- first_name: M.
full_name: Cardona, M.
last_name: Cardona
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
citation:
ama: Santos PV, Esser N, Cardona M, Schmidt WG, Bechstedt F. Optical properties
of Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(16):12158-12167.
doi:10.1103/physrevb.52.12158
apa: Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., & Bechstedt, F.
(1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical
Review B, 52(16), 12158–12167. https://doi.org/10.1103/physrevb.52.12158
bibtex: '@article{Santos_Esser_Cardona_Schmidt_Bechstedt_1995, title={Optical properties
of Sb-terminated GaAs and InP (110) surfaces}, volume={52}, DOI={10.1103/physrevb.52.12158},
number={16}, journal={Physical Review B}, author={Santos, Paulo V. and Esser,
N. and Cardona, M. and Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={12158–12167}
}'
chicago: 'Santos, Paulo V., N. Esser, M. Cardona, Wolf Gero Schmidt, and F. Bechstedt.
“Optical Properties of Sb-Terminated GaAs and InP (110) Surfaces.” Physical
Review B 52, no. 16 (1995): 12158–67. https://doi.org/10.1103/physrevb.52.12158.'
ieee: P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical
properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B,
vol. 52, no. 16, pp. 12158–12167, 1995.
mla: Santos, Paulo V., et al. “Optical Properties of Sb-Terminated GaAs and InP
(110) Surfaces.” Physical Review B, vol. 52, no. 16, 1995, pp. 12158–67,
doi:10.1103/physrevb.52.12158.
short: P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review
B 52 (1995) 12158–12167.
date_created: 2019-10-10T16:21:14Z
date_updated: 2022-01-06T06:51:44Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.52.12158
intvolume: ' 52'
issue: '16'
language:
- iso: eng
page: 12158-12167
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: Optical properties of Sb-terminated GaAs and InP (110) surfaces
type: journal_article
user_id: '16199'
volume: 52
year: '1995'
...
---
_id: '13798'
author:
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
- first_name: G. P.
full_name: Srivastava, G. P.
last_name: Srivastava
citation:
ama: Schmidt WG, Bechstedt F, Srivastava GP. III-V(110) surface dynamics from anab
initiofrozen-phonon approach. Physical Review B. 1995;52(3):2001-2007.
doi:10.1103/physrevb.52.2001
apa: Schmidt, W. G., Bechstedt, F., & Srivastava, G. P. (1995). III-V(110) surface
dynamics from anab initiofrozen-phonon approach. Physical Review B, 52(3),
2001–2007. https://doi.org/10.1103/physrevb.52.2001
bibtex: '@article{Schmidt_Bechstedt_Srivastava_1995, title={III-V(110) surface dynamics
from anab initiofrozen-phonon approach}, volume={52}, DOI={10.1103/physrevb.52.2001},
number={3}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt,
F. and Srivastava, G. P.}, year={1995}, pages={2001–2007} }'
chicago: 'Schmidt, Wolf Gero, F. Bechstedt, and G. P. Srivastava. “III-V(110) Surface
Dynamics from Anab Initiofrozen-Phonon Approach.” Physical Review B 52,
no. 3 (1995): 2001–7. https://doi.org/10.1103/physrevb.52.2001.'
ieee: W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics
from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no.
3, pp. 2001–2007, 1995.
mla: Schmidt, Wolf Gero, et al. “III-V(110) Surface Dynamics from Anab Initiofrozen-Phonon
Approach.” Physical Review B, vol. 52, no. 3, 1995, pp. 2001–07, doi:10.1103/physrevb.52.2001.
short: W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995)
2001–2007.
date_created: 2019-10-10T16:24:49Z
date_updated: 2022-01-06T06:51:44Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.52.2001
funded_apc: '1'
intvolume: ' 52'
issue: '3'
language:
- iso: eng
page: 2001-2007
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: III-V(110) surface dynamics from anab initiofrozen-phonon approach
type: journal_article
user_id: '16199'
volume: 52
year: '1995'
...
---
_id: '13850'
author:
- first_name: C.
full_name: Kress, C.
last_name: Kress
- first_name: M.
full_name: Fiedler, M.
last_name: Fiedler
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
citation:
ama: Kress C, Fiedler M, Schmidt WG, Bechstedt F. Geometrical and electronic structure
of the reconstructed diamond (100) surface. Physical Review B. 1995;50(23):17697-17700.
doi:10.1103/physrevb.50.17697
apa: Kress, C., Fiedler, M., Schmidt, W. G., & Bechstedt, F. (1995). Geometrical
and electronic structure of the reconstructed diamond (100) surface. Physical
Review B, 50(23), 17697–17700. https://doi.org/10.1103/physrevb.50.17697
bibtex: '@article{Kress_Fiedler_Schmidt_Bechstedt_1995, title={Geometrical and electronic
structure of the reconstructed diamond (100) surface}, volume={50}, DOI={10.1103/physrevb.50.17697},
number={23}, journal={Physical Review B}, author={Kress, C. and Fiedler, M. and
Schmidt, Wolf Gero and Bechstedt, F.}, year={1995}, pages={17697–17700} }'
chicago: 'Kress, C., M. Fiedler, Wolf Gero Schmidt, and F. Bechstedt. “Geometrical
and Electronic Structure of the Reconstructed Diamond (100) Surface.” Physical
Review B 50, no. 23 (1995): 17697–700. https://doi.org/10.1103/physrevb.50.17697.'
ieee: C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic
structure of the reconstructed diamond (100) surface,” Physical Review B,
vol. 50, no. 23, pp. 17697–17700, 1995.
mla: Kress, C., et al. “Geometrical and Electronic Structure of the Reconstructed
Diamond (100) Surface.” Physical Review B, vol. 50, no. 23, 1995, pp. 17697–700,
doi:10.1103/physrevb.50.17697.
short: C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995)
17697–17700.
date_created: 2019-10-15T09:56:32Z
date_updated: 2022-01-06T06:51:45Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.50.17697
intvolume: ' 50'
issue: '23'
language:
- iso: eng
page: 17697-17700
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: Geometrical and electronic structure of the reconstructed diamond (100) surface
type: journal_article
user_id: '16199'
volume: 50
year: '1995'
...
---
_id: '13851'
author:
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
citation:
ama: Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for
Se/GaAs(110). Physical Review B. 1995;50(23):17651-17654. doi:10.1103/physrevb.50.17651
apa: Schmidt, W. G., & Bechstedt, F. (1995). Exchange reactions versus adsorption
geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654.
https://doi.org/10.1103/physrevb.50.17651
bibtex: '@article{Schmidt_Bechstedt_1995, title={Exchange reactions versus adsorption
geometries for Se/GaAs(110)}, volume={50}, DOI={10.1103/physrevb.50.17651},
number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt,
F.}, year={1995}, pages={17651–17654} }'
chicago: 'Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption
Geometries for Se/GaAs(110).” Physical Review B 50, no. 23 (1995): 17651–54.
https://doi.org/10.1103/physrevb.50.17651.'
ieee: W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries
for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654,
1995.
mla: Schmidt, Wolf Gero, and F. Bechstedt. “Exchange Reactions versus Adsorption
Geometries for Se/GaAs(110).” Physical Review B, vol. 50, no. 23, 1995,
pp. 17651–54, doi:10.1103/physrevb.50.17651.
short: W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.
date_created: 2019-10-15T09:59:11Z
date_updated: 2022-01-06T06:51:45Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.50.17651
intvolume: ' 50'
issue: '23'
language:
- iso: eng
page: 17651-17654
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: Exchange reactions versus adsorption geometries for Se/GaAs(110)
type: journal_article
user_id: '16199'
volume: 50
year: '1995'
...
---
_id: '13852'
author:
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
citation:
ama: 'Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. Physical
Review B. 1995;50(23):17280-17291. doi:10.1103/physrevb.50.17280'
apa: 'Schmidt, W. G., & Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic
structure. Physical Review B, 50(23), 17280–17291. https://doi.org/10.1103/physrevb.50.17280'
bibtex: '@article{Schmidt_Bechstedt_1995, title={Se/GaAs(110): Atomic and electronic
structure}, volume={50}, DOI={10.1103/physrevb.50.17280},
number={23}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Bechstedt,
F.}, year={1995}, pages={17280–17291} }'
chicago: 'Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic
Structure.” Physical Review B 50, no. 23 (1995): 17280–91. https://doi.org/10.1103/physrevb.50.17280.'
ieee: 'W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,”
Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.'
mla: 'Schmidt, Wolf Gero, and F. Bechstedt. “Se/GaAs(110): Atomic and Electronic
Structure.” Physical Review B, vol. 50, no. 23, 1995, pp. 17280–91, doi:10.1103/physrevb.50.17280.'
short: W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.
date_created: 2019-10-15T10:00:45Z
date_updated: 2022-01-06T06:51:45Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.50.17280
intvolume: ' 50'
issue: '23'
language:
- iso: eng
page: 17280-17291
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: 'Se/GaAs(110): Atomic and electronic structure'
type: journal_article
user_id: '16199'
volume: 50
year: '1995'
...
---
_id: '13856'
author:
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: B.
full_name: Wenzien, B.
last_name: Wenzien
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
citation:
ama: Schmidt WG, Wenzien B, Bechstedt F. Chemisorption of antimony on GaAs(110).
Physical Review B. 1994;49(7):4731-4744. doi:10.1103/physrevb.49.4731
apa: Schmidt, W. G., Wenzien, B., & Bechstedt, F. (1994). Chemisorption of antimony
on GaAs(110). Physical Review B, 49(7), 4731–4744. https://doi.org/10.1103/physrevb.49.4731
bibtex: '@article{Schmidt_Wenzien_Bechstedt_1994, title={Chemisorption of antimony
on GaAs(110)}, volume={49}, DOI={10.1103/physrevb.49.4731},
number={7}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Wenzien,
B. and Bechstedt, F.}, year={1994}, pages={4731–4744} }'
chicago: 'Schmidt, Wolf Gero, B. Wenzien, and F. Bechstedt. “Chemisorption of Antimony
on GaAs(110).” Physical Review B 49, no. 7 (1994): 4731–44. https://doi.org/10.1103/physrevb.49.4731.'
ieee: W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on
GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.
mla: Schmidt, Wolf Gero, et al. “Chemisorption of Antimony on GaAs(110).” Physical
Review B, vol. 49, no. 7, 1994, pp. 4731–44, doi:10.1103/physrevb.49.4731.
short: W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.
date_created: 2019-10-15T10:08:58Z
date_updated: 2022-01-06T06:51:45Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
doi: 10.1103/physrevb.49.4731
intvolume: ' 49'
issue: '7'
language:
- iso: eng
page: 4731-4744
publication: Physical Review B
publication_identifier:
issn:
- 0163-1829
- 1095-3795
publication_status: published
status: public
title: Chemisorption of antimony on GaAs(110)
type: journal_article
user_id: '16199'
volume: 49
year: '1994'
...