---
_id: '17436'
abstract:
- lang: eng
text: The study of electron transport in low-dimensional systems is of importance,
not only from a fundamental point of view, but also for future electronic and
spintronic devices. In this context heterostructures containing a two-dimensional
electron gas (2DEG) are a key technology. In particular GaAs/AlGaAs heterostructures,
with a 2DEG at typically 100 nm below the surface, are widely studied. In order
to explore electron transport in such systems, low-resistance ohmic contacts are
required that connect the 2DEG to macroscopic measurement leads at the surface.
Here we report on designing and measuring a dedicated device for unraveling the
various resistance contributions in such contacts, which include pristine 2DEG
series resistance, the 2DEG resistance under a contact, the contact resistance
itself, and the influence of pressing a bonding wire onto a contact. We also report
here a recipe for contacts with very low resistance values that remain below 10
Ω for annealing times between 20 and 350 s, hence providing the flexibility to
use this method for materials with different 2DEG depths. The type of heating,
temperature ramp rate and gas forming used for annealing is found to strongly
influence the annealing process and hence the quality of the resulting contacts.
article_number: '20101'
author:
- first_name: Muhammad
full_name: Javaid Iqbal, Muhammad
last_name: Javaid Iqbal
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas Dirk
full_name: Wieck, Andreas Dirk
last_name: Wieck
- first_name: Caspar
full_name: van der Wal, Caspar
last_name: van der Wal
citation:
ama: Javaid Iqbal M, Reuter D, Wieck AD, van der Wal C. Characterization of low-resistance
ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure.
The European Physical Journal Applied Physics. 2020. doi:10.1051/epjap/2020190202
apa: Javaid Iqbal, M., Reuter, D., Wieck, A. D., & van der Wal, C. (2020). Characterization
of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs
heterostructure. The European Physical Journal Applied Physics. https://doi.org/10.1051/epjap/2020190202
bibtex: '@article{Javaid Iqbal_Reuter_Wieck_van der Wal_2020, title={Characterization
of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs
heterostructure}, DOI={10.1051/epjap/2020190202},
number={20101}, journal={The European Physical Journal Applied Physics}, author={Javaid
Iqbal, Muhammad and Reuter, Dirk and Wieck, Andreas Dirk and van der Wal, Caspar},
year={2020} }'
chicago: Javaid Iqbal, Muhammad, Dirk Reuter, Andreas Dirk Wieck, and Caspar van
der Wal. “Characterization of Low-Resistance Ohmic Contacts to a Two-Dimensional
Electron Gas in a GaAs/AlGaAs Heterostructure.” The European Physical Journal
Applied Physics, 2020. https://doi.org/10.1051/epjap/2020190202.
ieee: M. Javaid Iqbal, D. Reuter, A. D. Wieck, and C. van der Wal, “Characterization
of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs
heterostructure,” The European Physical Journal Applied Physics, 2020.
mla: Javaid Iqbal, Muhammad, et al. “Characterization of Low-Resistance Ohmic Contacts
to a Two-Dimensional Electron Gas in a GaAs/AlGaAs Heterostructure.” The European
Physical Journal Applied Physics, 20101, 2020, doi:10.1051/epjap/2020190202.
short: M. Javaid Iqbal, D. Reuter, A.D. Wieck, C. van der Wal, The European Physical
Journal Applied Physics (2020).
date_created: 2020-07-29T08:29:26Z
date_updated: 2022-01-06T06:53:12Z
department:
- _id: '15'
- _id: '230'
doi: 10.1051/epjap/2020190202
language:
- iso: eng
publication: The European Physical Journal Applied Physics
publication_identifier:
issn:
- 1286-0042
- 1286-0050
publication_status: published
status: public
title: Characterization of low-resistance ohmic contacts to a two-dimensional electron
gas in a GaAs/AlGaAs heterostructure
type: journal_article
user_id: '42514'
year: '2020'
...