TY - JOUR AU - Schuster, J AU - Kim, T Y AU - Batke, E AU - Reuter, Dirk AU - Wieck, A D ID - 21796 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields ER - TY - JOUR AU - Köthemann, Ronja AU - Weber, Nils AU - Lindner, Jörg K N AU - Meier, Cedrik ID - 12930 IS - 9 JF - Semiconductor Science and Technology SN - 0268-1242 TI - High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy VL - 34 ER - TY - JOUR AU - Kandemir, A AU - Akbali, B AU - Kahraman, Z AU - Badalov, S V AU - Ozcan, M AU - Iyikanat, F AU - Sahin, H ID - 19215 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Structural, electronic and phononic properties of PtSe2: from monolayer to bulk ER - TY - JOUR AU - Schuster, J AU - Kim, T Y AU - Batke, E AU - Reuter, Dirk AU - Wieck, A D ID - 7009 IS - 9 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures VL - 33 ER - TY - JOUR AU - Schuster, J AU - Kim, T Y AU - Batke, E AU - Reuter, Dirk AU - Wieck, A D ID - 7282 IS - 8 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures VL - 28 ER - TY - JOUR AU - Koop, E J AU - Iqbal, M J AU - Limbach, F AU - Boute, M AU - van Wees, B J AU - Reuter, Dirk AU - Wieck, A D AU - Kooi, B J AU - van der Wal, C H ID - 7295 IS - 2 JF - Semiconductor Science and Technology SN - 0268-1242 TI - On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures VL - 28 ER - TY - JOUR AB - Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface. AU - Wiedemeier, V AU - Berth, Gerhard AU - Zrenner, Artur AU - Larramendi, E M AU - Woggon, U AU - Lischka, K AU - Schikora, D ID - 4545 IS - 10 JF - Semiconductor Science and Technology SN - 0268-1242 TI - In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy VL - 26 ER - TY - JOUR AB - Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point. AU - Larramendi, E M AU - Berth, Gerhard AU - Wiedemeier, V AU - Hüsch, K-P AU - Zrenner, Artur AU - Woggon, U AU - Tschumak, E AU - Lischka, K AU - Schikora, D ID - 4549 IS - 7 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers VL - 25 ER - TY - JOUR AU - Knop, M AU - Richter, M AU - Maßmann, R AU - Wieser, U AU - Kunze, U AU - Reuter, Dirk AU - Riedesel, C AU - Wieck, A D ID - 8693 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene ER - TY - JOUR AU - Kähler, D AU - Knop, M AU - Kunze, U AU - Reuter, Dirk AU - Wieck, A D ID - 8692 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation ER - TY - JOUR AU - Reuter, Dirk AU - Kähler, D AU - Kunze, U AU - Wieck, A D ID - 8747 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography ER - TY - JOUR AU - Reuter, Dirk AU - Kähler, D AU - Kunze, U AU - Wieck, A D ID - 8768 JF - Semiconductor Science and Technology SN - 0268-1242 TI - Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography ER -