--- _id: '21796' article_number: '085011' author: - first_name: J full_name: Schuster, J last_name: Schuster - first_name: T Y full_name: Kim, T Y last_name: Kim - first_name: E full_name: Batke, E last_name: Batke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1 apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2020). Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/ab89e1 bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={10.1088/1361-6641/ab89e1}, number={085011}, journal={Semiconductor Science and Technology}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }' chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology, 2020. https://doi.org/10.1088/1361-6641/ab89e1. ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,” Semiconductor Science and Technology, 2020. mla: Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology, 085011, 2020, doi:10.1088/1361-6641/ab89e1. short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2020). date_created: 2021-04-26T06:55:54Z date_updated: 2022-01-06T06:55:13Z department: - _id: '15' - _id: '230' doi: 10.1088/1361-6641/ab89e1 language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular magnetic fields type: journal_article user_id: '42514' year: '2020' ... --- _id: '12930' article_number: '095009' author: - first_name: Ronja full_name: Köthemann, Ronja last_name: Köthemann - first_name: Nils full_name: Weber, Nils last_name: Weber - first_name: Jörg K N full_name: Lindner, Jörg K N last_name: Lindner - first_name: Cedrik full_name: Meier, Cedrik id: '20798' last_name: Meier orcid: https://orcid.org/0000-0002-3787-3572 citation: ama: 'Köthemann R, Weber N, Lindner JKN, Meier C. High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology. 2019;34(9). doi:10.1088/1361-6641/ab3536' apa: 'Köthemann, R., Weber, N., Lindner, J. K. N., & Meier, C. (2019). High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor Science and Technology, 34(9). https://doi.org/10.1088/1361-6641/ab3536' bibtex: '@article{Köthemann_Weber_Lindner_Meier_2019, title={High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy}, volume={34}, DOI={10.1088/1361-6641/ab3536}, number={9095009}, journal={Semiconductor Science and Technology}, author={Köthemann, Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik}, year={2019} }' chicago: 'Köthemann, Ronja, Nils Weber, Jörg K N Lindner, and Cedrik Meier. “High-Precision Determination of Silicon Nanocrystals: Optical Spectroscopy versus Electron Microscopy.” Semiconductor Science and Technology 34, no. 9 (2019). https://doi.org/10.1088/1361-6641/ab3536.' ieee: 'R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy,” Semiconductor Science and Technology, vol. 34, no. 9, 2019.' mla: 'Köthemann, Ronja, et al. “High-Precision Determination of Silicon Nanocrystals: Optical Spectroscopy versus Electron Microscopy.” Semiconductor Science and Technology, vol. 34, no. 9, 095009, 2019, doi:10.1088/1361-6641/ab3536.' short: R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019). date_created: 2019-08-14T11:12:33Z date_updated: 2022-01-06T06:51:26Z ddc: - '530' department: - _id: '15' - _id: '230' - _id: '429' - _id: '287' doi: 10.1088/1361-6641/ab3536 intvolume: ' 34' issue: '9' language: - iso: eng project: - _id: '53' name: TRR 142 - _id: '55' name: TRR 142 - Project Area B - _id: '66' name: TRR 142 - Subproject B1 - _id: '56' name: TRR 142 - Project Area C - _id: '75' name: TRR 142 - Subproject C5 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: 'High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy' type: journal_article user_id: '20798' volume: 34 year: '2019' ... --- _id: '19215' article_number: '085002' author: - first_name: A full_name: Kandemir, A last_name: Kandemir - first_name: B full_name: Akbali, B last_name: Akbali - first_name: Z full_name: Kahraman, Z last_name: Kahraman - first_name: S V full_name: Badalov, S V last_name: Badalov - first_name: M full_name: Ozcan, M last_name: Ozcan - first_name: F full_name: Iyikanat, F last_name: Iyikanat - first_name: H full_name: Sahin, H last_name: Sahin citation: ama: 'Kandemir A, Akbali B, Kahraman Z, et al. Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology. 2018. doi:10.1088/1361-6641/aacba2' apa: 'Kandemir, A., Akbali, B., Kahraman, Z., Badalov, S. V., Ozcan, M., Iyikanat, F., & Sahin, H. (2018). Structural, electronic and phononic properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/aacba2' bibtex: '@article{Kandemir_Akbali_Kahraman_Badalov_Ozcan_Iyikanat_Sahin_2018, title={Structural, electronic and phononic properties of PtSe2: from monolayer to bulk}, DOI={10.1088/1361-6641/aacba2}, number={085002}, journal={Semiconductor Science and Technology}, author={Kandemir, A and Akbali, B and Kahraman, Z and Badalov, S V and Ozcan, M and Iyikanat, F and Sahin, H}, year={2018} }' chicago: 'Kandemir, A, B Akbali, Z Kahraman, S V Badalov, M Ozcan, F Iyikanat, and H Sahin. “Structural, Electronic and Phononic Properties of PtSe2: From Monolayer to Bulk.” Semiconductor Science and Technology, 2018. https://doi.org/10.1088/1361-6641/aacba2.' ieee: 'A. Kandemir et al., “Structural, electronic and phononic properties of PtSe2: from monolayer to bulk,” Semiconductor Science and Technology, 2018.' mla: 'Kandemir, A., et al. “Structural, Electronic and Phononic Properties of PtSe2: From Monolayer to Bulk.” Semiconductor Science and Technology, 085002, 2018, doi:10.1088/1361-6641/aacba2.' short: A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat, H. Sahin, Semiconductor Science and Technology (2018). date_created: 2020-09-09T15:54:14Z date_updated: 2022-01-06T06:54:00Z doi: 10.1088/1361-6641/aacba2 extern: '1' language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: 'Structural, electronic and phononic properties of PtSe2: from monolayer to bulk' type: journal_article user_id: '78800' year: '2018' ... --- _id: '7009' article_number: '095020' author: - first_name: J full_name: Schuster, J last_name: Schuster - first_name: T Y full_name: Kim, T Y last_name: Kim - first_name: E full_name: Batke, E last_name: Batke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2018). Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad83d bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2018, title={Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}, volume={33}, DOI={10.1088/1361-6641/aad83d}, number={9095020}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2018} }' chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology 33, no. 9 (2018). https://doi.org/10.1088/1361-6641/aad83d. ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,” Semiconductor Science and Technology, vol. 33, no. 9, 2018. mla: Schuster, J., et al. “Interlayer Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology, vol. 33, no. 9, 095020, IOP Publishing, 2018, doi:10.1088/1361-6641/aad83d. short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018). date_created: 2019-01-28T08:18:34Z date_updated: 2022-01-06T07:03:26Z department: - _id: '15' - _id: '230' doi: 10.1088/1361-6641/aad83d intvolume: ' 33' issue: '9' language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published publisher: IOP Publishing status: public title: Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures type: journal_article user_id: '42514' volume: 33 year: '2018' ... --- _id: '7282' article_number: '085012' author: - first_name: J full_name: Schuster, J last_name: Schuster - first_name: T Y full_name: Kim, T Y last_name: Kim - first_name: E full_name: Batke, E last_name: Batke - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012 apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013). Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012 bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/8/085012}, number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2013} }' chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012. ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013. mla: Schuster, J., et al. “Influence of Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and Technology, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:10.1088/0268-1242/28/8/085012. short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013). date_created: 2019-01-31T08:01:35Z date_updated: 2022-01-06T07:03:31Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/28/8/085012 intvolume: ' 28' issue: '8' language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published publisher: IOP Publishing status: public title: Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures type: journal_article user_id: '42514' volume: 28 year: '2013' ... --- _id: '7295' article_number: '025006' author: - first_name: E J full_name: Koop, E J last_name: Koop - first_name: M J full_name: Iqbal, M J last_name: Iqbal - first_name: F full_name: Limbach, F last_name: Limbach - first_name: M full_name: Boute, M last_name: Boute - first_name: B J full_name: van Wees, B J last_name: van Wees - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A D full_name: Wieck, A D last_name: Wieck - first_name: B J full_name: Kooi, B J last_name: Kooi - first_name: C H full_name: van der Wal, C H last_name: van der Wal citation: ama: Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. Semiconductor Science and Technology. 2013;28(2). doi:10.1088/0268-1242/28/2/025006 apa: Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter, D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures. Semiconductor Science and Technology, 28(2). https://doi.org/10.1088/0268-1242/28/2/025006 bibtex: '@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013, title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/2/025006}, number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C H}, year={2013} }' chicago: Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” Semiconductor Science and Technology 28, no. 2 (2013). https://doi.org/10.1088/0268-1242/28/2/025006. ieee: E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 2, 2013. mla: Koop, E. J., et al. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” Semiconductor Science and Technology, vol. 28, no. 2, 025006, IOP Publishing, 2013, doi:10.1088/0268-1242/28/2/025006. short: E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013). date_created: 2019-01-31T08:59:46Z date_updated: 2022-01-06T07:03:32Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/28/2/025006 intvolume: ' 28' issue: '2' language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published publisher: IOP Publishing status: public title: On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures type: journal_article user_id: '42514' volume: 28 year: '2013' ... --- _id: '4545' abstract: - lang: eng text: Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity with the increase of laser power density. The appearance of the peaks associated with the stronger crystalline-tellurium modes, tellurium aggregates and second-order Raman scattering at room temperature μ-Raman spectra was observed for higher power densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation damage and a fast formation of crystalline tellurium aggregates on the layer surface. article_number: '105023' article_type: original author: - first_name: V full_name: Wiedemeier, V last_name: Wiedemeier - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: E M full_name: Larramendi, E M last_name: Larramendi - first_name: U full_name: Woggon, U last_name: Woggon - first_name: K full_name: Lischka, K last_name: Lischka - first_name: D full_name: Schikora, D last_name: Schikora citation: ama: Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023 apa: Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka, K., & Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor Science and Technology, 26(10). https://doi.org/10.1088/0268-1242/26/10/105023 bibtex: '@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011, title={In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy}, volume={26}, DOI={10.1088/0268-1242/26/10/105023}, number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi, E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }' chicago: Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon, K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor Science and Technology 26, no. 10 (2011). https://doi.org/10.1088/0268-1242/26/10/105023. ieee: V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor Science and Technology, vol. 26, no. 10, 2011. mla: Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor Science and Technology, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:10.1088/0268-1242/26/10/105023. short: V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011). date_created: 2018-09-20T11:36:28Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' doi: 10.1088/0268-1242/26/10/105023 intvolume: ' 26' issue: '10' language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published publisher: IOP Publishing status: public title: In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy type: journal_article user_id: '49428' volume: 26 year: '2011' ... --- _id: '4549' abstract: - lang: eng text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant micro-Raman spectra at room temperature. Discrepancies in the literature regarding the origin of two features observed at low frequencies around 120 and 140 cm−1 in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were not detected by using a low excitation laser power density on a Zn-terminated ZnTe surface; however, with the increase of the laser power density they were found to arise irreversibly. The correspondence of these peaks in a wave number with the strongest Raman peaks of the crystalline tellurium phase and the intensity enhancement behavior with the laser power in a similar way as for CdTe strongly suggests the formation of crystalline tellurium aggregates on the layer surface due to laser irradiation damage. AFM data reveal the occurrence of laser ablation on the ZnTe surface even though the surface temperature of the sample is below the melting point. article_number: '075003' article_type: original author: - first_name: E M full_name: Larramendi, E M last_name: Larramendi - first_name: Gerhard full_name: Berth, Gerhard id: '53' last_name: Berth - first_name: V full_name: Wiedemeier, V last_name: Wiedemeier - first_name: K-P full_name: Hüsch, K-P last_name: Hüsch - first_name: Artur full_name: Zrenner, Artur id: '606' last_name: Zrenner orcid: 0000-0002-5190-0944 - first_name: U full_name: Woggon, U last_name: Woggon - first_name: E full_name: Tschumak, E last_name: Tschumak - first_name: K full_name: Lischka, K last_name: Lischka - first_name: D full_name: Schikora, D last_name: Schikora citation: ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology. 2010;25(7). doi:10.1088/0268-1242/25/7/075003 apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon, U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology, 25(7). https://doi.org/10.1088/0268-1242/25/7/075003 bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010, title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers}, volume={25}, DOI={10.1088/0268-1242/25/7/075003}, number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and Schikora, D}, year={2010} }' chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner, U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology 25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003. ieee: E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers,” Semiconductor Science and Technology, vol. 25, no. 7, 2010. mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003. short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010). date_created: 2018-09-20T12:35:35Z date_updated: 2022-01-06T07:01:09Z department: - _id: '15' - _id: '230' - _id: '35' doi: 10.1088/0268-1242/25/7/075003 intvolume: ' 25' issue: '7' language: - iso: eng publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published publisher: IOP Publishing status: public title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers type: journal_article user_id: '49428' volume: 25 year: '2010' ... --- _id: '8693' author: - first_name: M full_name: Knop, M last_name: Knop - first_name: M full_name: Richter, M last_name: Richter - first_name: R full_name: Maßmann, R last_name: Maßmann - first_name: U full_name: Wieser, U last_name: Wieser - first_name: U full_name: Kunze, U last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: C full_name: Riedesel, C last_name: Riedesel - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031 apa: Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck, A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science and Technology, 814–818. https://doi.org/10.1088/0268-1242/20/8/031 bibtex: '@article{Knop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005, title={Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene}, DOI={10.1088/0268-1242/20/8/031}, journal={Semiconductor Science and Technology}, author={Knop, M and Richter, M and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and Wieck, A D}, year={2005}, pages={814–818} }' chicago: Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel, and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.” Semiconductor Science and Technology, 2005, 814–18. https://doi.org/10.1088/0268-1242/20/8/031. ieee: M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene,” Semiconductor Science and Technology, pp. 814–818, 2005. mla: Knop, M., et al. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.” Semiconductor Science and Technology, 2005, pp. 814–18, doi:10.1088/0268-1242/20/8/031. short: M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818. date_created: 2019-03-27T11:16:26Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/20/8/031 language: - iso: eng page: 814-818 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene type: journal_article user_id: '42514' year: '2005' ... --- _id: '8692' author: - first_name: D full_name: Kähler, D last_name: Kähler - first_name: M full_name: Knop, M last_name: Knop - first_name: U full_name: Kunze, U last_name: Kunze - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006 apa: Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006 bibtex: '@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation}, DOI={10.1088/0268-1242/20/2/006}, journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }' chicago: Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, 140–43. https://doi.org/10.1088/0268-1242/20/2/006. ieee: D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation,” Semiconductor Science and Technology, pp. 140–143, 2004. mla: Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor Science and Technology, 2004, pp. 140–43, doi:10.1088/0268-1242/20/2/006. short: D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143. date_created: 2019-03-27T11:15:10Z date_updated: 2022-01-06T07:03:59Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/20/2/006 language: - iso: eng page: 140-143 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation type: journal_article user_id: '42514' year: '2004' ... --- _id: '8747' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-03-29T11:24:11Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ... --- _id: '8768' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-04-01T07:56:38Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ...