---
_id: '21796'
article_number: '085011'
author:
- first_name: J
  full_name: Schuster, J
  last_name: Schuster
- first_name: T Y
  full_name: Kim, T Y
  last_name: Kim
- first_name: E
  full_name: Batke, E
  last_name: Batke
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound
    hole photoluminescence in GaAs in perpendicular magnetic fields. <i>Semiconductor
    Science and Technology</i>. 2020. doi:<a href="https://doi.org/10.1088/1361-6641/ab89e1">10.1088/1361-6641/ab89e1</a>
  apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2020).
    Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
    magnetic fields. <i>Semiconductor Science and Technology</i>. <a href="https://doi.org/10.1088/1361-6641/ab89e1">https://doi.org/10.1088/1361-6641/ab89e1</a>
  bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron
    bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={<a
    href="https://doi.org/10.1088/1361-6641/ab89e1">10.1088/1361-6641/ab89e1</a>},
    number={085011}, journal={Semiconductor Science and Technology}, author={Schuster,
    J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }'
  chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional
    Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.”
    <i>Semiconductor Science and Technology</i>, 2020. <a href="https://doi.org/10.1088/1361-6641/ab89e1">https://doi.org/10.1088/1361-6641/ab89e1</a>.
  ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional
    electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,”
    <i>Semiconductor Science and Technology</i>, 2020.
  mla: Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence
    in GaAs in Perpendicular Magnetic Fields.” <i>Semiconductor Science and Technology</i>,
    085011, 2020, doi:<a href="https://doi.org/10.1088/1361-6641/ab89e1">10.1088/1361-6641/ab89e1</a>.
  short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
    and Technology (2020).
date_created: 2021-04-26T06:55:54Z
date_updated: 2022-01-06T06:55:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1361-6641/ab89e1
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
  magnetic fields
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '12930'
article_number: '095009'
author:
- first_name: Ronja
  full_name: Köthemann, Ronja
  last_name: Köthemann
- first_name: Nils
  full_name: Weber, Nils
  last_name: Weber
- first_name: Jörg K N
  full_name: Lindner, Jörg K N
  last_name: Lindner
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: 'Köthemann R, Weber N, Lindner JKN, Meier C. High-precision determination of
    silicon nanocrystals: optical spectroscopy versus electron microscopy. <i>Semiconductor
    Science and Technology</i>. 2019;34(9). doi:<a href="https://doi.org/10.1088/1361-6641/ab3536">10.1088/1361-6641/ab3536</a>'
  apa: 'Köthemann, R., Weber, N., Lindner, J. K. N., &#38; Meier, C. (2019). High-precision
    determination of silicon nanocrystals: optical spectroscopy versus electron microscopy.
    <i>Semiconductor Science and Technology</i>, <i>34</i>(9). <a href="https://doi.org/10.1088/1361-6641/ab3536">https://doi.org/10.1088/1361-6641/ab3536</a>'
  bibtex: '@article{Köthemann_Weber_Lindner_Meier_2019, title={High-precision determination
    of silicon nanocrystals: optical spectroscopy versus electron microscopy}, volume={34},
    DOI={<a href="https://doi.org/10.1088/1361-6641/ab3536">10.1088/1361-6641/ab3536</a>},
    number={9095009}, journal={Semiconductor Science and Technology}, author={Köthemann,
    Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik}, year={2019} }'
  chicago: 'Köthemann, Ronja, Nils Weber, Jörg K N Lindner, and Cedrik Meier. “High-Precision
    Determination of Silicon Nanocrystals: Optical Spectroscopy versus Electron Microscopy.”
    <i>Semiconductor Science and Technology</i> 34, no. 9 (2019). <a href="https://doi.org/10.1088/1361-6641/ab3536">https://doi.org/10.1088/1361-6641/ab3536</a>.'
  ieee: 'R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination
    of silicon nanocrystals: optical spectroscopy versus electron microscopy,” <i>Semiconductor
    Science and Technology</i>, vol. 34, no. 9, 2019.'
  mla: 'Köthemann, Ronja, et al. “High-Precision Determination of Silicon Nanocrystals:
    Optical Spectroscopy versus Electron Microscopy.” <i>Semiconductor Science and
    Technology</i>, vol. 34, no. 9, 095009, 2019, doi:<a href="https://doi.org/10.1088/1361-6641/ab3536">10.1088/1361-6641/ab3536</a>.'
  short: R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and
    Technology 34 (2019).
date_created: 2019-08-14T11:12:33Z
date_updated: 2022-01-06T06:51:26Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '429'
- _id: '287'
doi: 10.1088/1361-6641/ab3536
intvolume: '        34'
issue: '9'
language:
- iso: eng
project:
- _id: '53'
  name: TRR 142
- _id: '55'
  name: TRR 142 - Project Area B
- _id: '66'
  name: TRR 142 - Subproject B1
- _id: '56'
  name: TRR 142 - Project Area C
- _id: '75'
  name: TRR 142 - Subproject C5
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: 'High-precision determination of silicon nanocrystals: optical spectroscopy
  versus electron microscopy'
type: journal_article
user_id: '20798'
volume: 34
year: '2019'
...
---
_id: '19215'
article_number: '085002'
author:
- first_name: A
  full_name: Kandemir, A
  last_name: Kandemir
- first_name: B
  full_name: Akbali, B
  last_name: Akbali
- first_name: Z
  full_name: Kahraman, Z
  last_name: Kahraman
- first_name: S V
  full_name: Badalov, S V
  last_name: Badalov
- first_name: M
  full_name: Ozcan, M
  last_name: Ozcan
- first_name: F
  full_name: Iyikanat, F
  last_name: Iyikanat
- first_name: H
  full_name: Sahin, H
  last_name: Sahin
citation:
  ama: 'Kandemir A, Akbali B, Kahraman Z, et al. Structural, electronic and phononic
    properties of PtSe2: from monolayer to bulk. <i>Semiconductor Science and Technology</i>.
    2018. doi:<a href="https://doi.org/10.1088/1361-6641/aacba2">10.1088/1361-6641/aacba2</a>'
  apa: 'Kandemir, A., Akbali, B., Kahraman, Z., Badalov, S. V., Ozcan, M., Iyikanat,
    F., &#38; Sahin, H. (2018). Structural, electronic and phononic properties of
    PtSe2: from monolayer to bulk. <i>Semiconductor Science and Technology</i>. <a
    href="https://doi.org/10.1088/1361-6641/aacba2">https://doi.org/10.1088/1361-6641/aacba2</a>'
  bibtex: '@article{Kandemir_Akbali_Kahraman_Badalov_Ozcan_Iyikanat_Sahin_2018, title={Structural,
    electronic and phononic properties of PtSe2: from monolayer to bulk}, DOI={<a
    href="https://doi.org/10.1088/1361-6641/aacba2">10.1088/1361-6641/aacba2</a>},
    number={085002}, journal={Semiconductor Science and Technology}, author={Kandemir,
    A and Akbali, B and Kahraman, Z and Badalov, S V and Ozcan, M and Iyikanat, F
    and Sahin, H}, year={2018} }'
  chicago: 'Kandemir, A, B Akbali, Z Kahraman, S V Badalov, M Ozcan, F Iyikanat, and
    H Sahin. “Structural, Electronic and Phononic Properties of PtSe2: From Monolayer
    to Bulk.” <i>Semiconductor Science and Technology</i>, 2018. <a href="https://doi.org/10.1088/1361-6641/aacba2">https://doi.org/10.1088/1361-6641/aacba2</a>.'
  ieee: 'A. Kandemir <i>et al.</i>, “Structural, electronic and phononic properties
    of PtSe2: from monolayer to bulk,” <i>Semiconductor Science and Technology</i>,
    2018.'
  mla: 'Kandemir, A., et al. “Structural, Electronic and Phononic Properties of PtSe2:
    From Monolayer to Bulk.” <i>Semiconductor Science and Technology</i>, 085002,
    2018, doi:<a href="https://doi.org/10.1088/1361-6641/aacba2">10.1088/1361-6641/aacba2</a>.'
  short: A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat,
    H. Sahin, Semiconductor Science and Technology (2018).
date_created: 2020-09-09T15:54:14Z
date_updated: 2022-01-06T06:54:00Z
doi: 10.1088/1361-6641/aacba2
extern: '1'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: 'Structural, electronic and phononic properties of PtSe2: from monolayer to
  bulk'
type: journal_article
user_id: '78800'
year: '2018'
...
---
_id: '7009'
article_number: '095020'
author:
- first_name: J
  full_name: Schuster, J
  last_name: Schuster
- first_name: T Y
  full_name: Kim, T Y
  last_name: Kim
- first_name: E
  full_name: Batke, E
  last_name: Batke
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer
    in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. <i>Semiconductor
    Science and Technology</i>. 2018;33(9). doi:<a href="https://doi.org/10.1088/1361-6641/aad83d">10.1088/1361-6641/aad83d</a>
  apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2018).
    Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures.
    <i>Semiconductor Science and Technology</i>, <i>33</i>(9). <a href="https://doi.org/10.1088/1361-6641/aad83d">https://doi.org/10.1088/1361-6641/aad83d</a>
  bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2018, title={Interlayer charge
    transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}, volume={33},
    DOI={<a href="https://doi.org/10.1088/1361-6641/aad83d">10.1088/1361-6641/aad83d</a>},
    number={9095020}, journal={Semiconductor Science and Technology}, publisher={IOP
    Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and
    Wieck, A D}, year={2018} }'
  chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer
    Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.”
    <i>Semiconductor Science and Technology</i> 33, no. 9 (2018). <a href="https://doi.org/10.1088/1361-6641/aad83d">https://doi.org/10.1088/1361-6641/aad83d</a>.
  ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer
    charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,”
    <i>Semiconductor Science and Technology</i>, vol. 33, no. 9, 2018.
  mla: Schuster, J., et al. “Interlayer Charge Transfer in N-Modulation Doped Al1−x
    Ga x As–GaAs Single Heterostructures.” <i>Semiconductor Science and Technology</i>,
    vol. 33, no. 9, 095020, IOP Publishing, 2018, doi:<a href="https://doi.org/10.1088/1361-6641/aad83d">10.1088/1361-6641/aad83d</a>.
  short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
    and Technology 33 (2018).
date_created: 2019-01-28T08:18:34Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1361-6641/aad83d
intvolume: '        33'
issue: '9'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single
  heterostructures
type: journal_article
user_id: '42514'
volume: 33
year: '2018'
...
---
_id: '7282'
article_number: '085012'
author:
- first_name: J
  full_name: Schuster, J
  last_name: Schuster
- first_name: T Y
  full_name: Kim, T Y
  last_name: Kim
- first_name: E
  full_name: Batke, E
  last_name: Batke
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination
    center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. <i>Semiconductor
    Science and Technology</i>. 2013;28(8). doi:<a href="https://doi.org/10.1088/0268-1242/28/8/085012">10.1088/0268-1242/28/8/085012</a>
  apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., &#38; Wieck, A. D. (2013).
    Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs
    heterostructures. <i>Semiconductor Science and Technology</i>, <i>28</i>(8). <a
    href="https://doi.org/10.1088/0268-1242/28/8/085012">https://doi.org/10.1088/0268-1242/28/8/085012</a>
  bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination
    center interaction on the photoluminescence of AlGaAs/GaAs heterostructures},
    volume={28}, DOI={<a href="https://doi.org/10.1088/0268-1242/28/8/085012">10.1088/0268-1242/28/8/085012</a>},
    number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP
    Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and
    Wieck, A D}, year={2013} }'
  chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of
    Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.”
    <i>Semiconductor Science and Technology</i> 28, no. 8 (2013). <a href="https://doi.org/10.1088/0268-1242/28/8/085012">https://doi.org/10.1088/0268-1242/28/8/085012</a>.
  ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of
    recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,”
    <i>Semiconductor Science and Technology</i>, vol. 28, no. 8, 2013.
  mla: Schuster, J., et al. “Influence of Recombination Center Interaction on the
    Photoluminescence of AlGaAs/GaAs Heterostructures.” <i>Semiconductor Science and
    Technology</i>, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:<a href="https://doi.org/10.1088/0268-1242/28/8/085012">10.1088/0268-1242/28/8/085012</a>.
  short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
    and Technology 28 (2013).
date_created: 2019-01-31T08:01:35Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/28/8/085012
intvolume: '        28'
issue: '8'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs
  heterostructures
type: journal_article
user_id: '42514'
volume: 28
year: '2013'
...
---
_id: '7295'
article_number: '025006'
author:
- first_name: E J
  full_name: Koop, E J
  last_name: Koop
- first_name: M J
  full_name: Iqbal, M J
  last_name: Iqbal
- first_name: F
  full_name: Limbach, F
  last_name: Limbach
- first_name: M
  full_name: Boute, M
  last_name: Boute
- first_name: B J
  full_name: van Wees, B J
  last_name: van Wees
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
- first_name: B J
  full_name: Kooi, B J
  last_name: Kooi
- first_name: C H
  full_name: van der Wal, C H
  last_name: van der Wal
citation:
  ama: Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au
    ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures.
    <i>Semiconductor Science and Technology</i>. 2013;28(2). doi:<a href="https://doi.org/10.1088/0268-1242/28/2/025006">10.1088/0268-1242/28/2/025006</a>
  apa: Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter,
    D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic
    contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures.
    <i>Semiconductor Science and Technology</i>, <i>28</i>(2). <a href="https://doi.org/10.1088/0268-1242/28/2/025006">https://doi.org/10.1088/0268-1242/28/2/025006</a>
  bibtex: '@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013,
    title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional
    electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={<a href="https://doi.org/10.1088/0268-1242/28/2/025006">10.1088/0268-1242/28/2/025006</a>},
    number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP
    Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and
    van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C
    H}, year={2013} }'
  chicago: Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A
    D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au
    Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.”
    <i>Semiconductor Science and Technology</i> 28, no. 2 (2013). <a href="https://doi.org/10.1088/0268-1242/28/2/025006">https://doi.org/10.1088/0268-1242/28/2/025006</a>.
  ieee: E. J. Koop <i>et al.</i>, “On the annealing mechanism of AuGe/Ni/Au ohmic
    contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,”
    <i>Semiconductor Science and Technology</i>, vol. 28, no. 2, 2013.
  mla: Koop, E. J., et al. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts
    to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” <i>Semiconductor
    Science and Technology</i>, vol. 28, no. 2, 025006, IOP Publishing, 2013, doi:<a
    href="https://doi.org/10.1088/0268-1242/28/2/025006">10.1088/0268-1242/28/2/025006</a>.
  short: E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D.
    Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
date_created: 2019-01-31T08:59:46Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/28/2/025006
intvolume: '        28'
issue: '2'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional
  electron gas in GaAs/AlxGa1−xAs heterostructures
type: journal_article
user_id: '42514'
volume: 28
year: '2013'
...
---
_id: '4545'
abstract:
- lang: eng
  text: Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent
    and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition
    on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity
    with the increase of laser power density. The appearance of the peaks associated
    with the stronger crystalline-tellurium modes, tellurium aggregates and second-order
    Raman scattering at room temperature μ-Raman spectra was observed for higher power
    densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO
    and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation
    damage and a fast formation of crystalline tellurium aggregates on the layer surface.
article_number: '105023'
article_type: original
author:
- first_name: V
  full_name: Wiedemeier, V
  last_name: Wiedemeier
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: E M
  full_name: Larramendi, E M
  last_name: Larramendi
- first_name: U
  full_name: Woggon, U
  last_name: Woggon
- first_name: K
  full_name: Lischka, K
  last_name: Lischka
- first_name: D
  full_name: Schikora, D
  last_name: Schikora
citation:
  ama: Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer
    irradiation via time-resolved and power-density-dependent Raman spectroscopy.
    <i>Semiconductor Science and Technology</i>. 2011;26(10). doi:<a href="https://doi.org/10.1088/0268-1242/26/10/105023">10.1088/0268-1242/26/10/105023</a>
  apa: Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka,
    K., &#38; Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation
    via time-resolved and power-density-dependent Raman spectroscopy. <i>Semiconductor
    Science and Technology</i>, <i>26</i>(10). <a href="https://doi.org/10.1088/0268-1242/26/10/105023">https://doi.org/10.1088/0268-1242/26/10/105023</a>
  bibtex: '@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011,
    title={In situ characterization of ZnTe epilayer irradiation via time-resolved
    and power-density-dependent Raman spectroscopy}, volume={26}, DOI={<a href="https://doi.org/10.1088/0268-1242/26/10/105023">10.1088/0268-1242/26/10/105023</a>},
    number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP
    Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi,
    E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }'
  chicago: Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon,
    K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation
    via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” <i>Semiconductor
    Science and Technology</i> 26, no. 10 (2011). <a href="https://doi.org/10.1088/0268-1242/26/10/105023">https://doi.org/10.1088/0268-1242/26/10/105023</a>.
  ieee: V. Wiedemeier <i>et al.</i>, “In situ characterization of ZnTe epilayer irradiation
    via time-resolved and power-density-dependent Raman spectroscopy,” <i>Semiconductor
    Science and Technology</i>, vol. 26, no. 10, 2011.
  mla: Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation
    via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” <i>Semiconductor
    Science and Technology</i>, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:<a
    href="https://doi.org/10.1088/0268-1242/26/10/105023">10.1088/0268-1242/26/10/105023</a>.
  short: V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka,
    D. Schikora, Semiconductor Science and Technology 26 (2011).
date_created: 2018-09-20T11:36:28Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/26/10/105023
intvolume: '        26'
issue: '10'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: In situ characterization of ZnTe epilayer irradiation via time-resolved and
  power-density-dependent Raman spectroscopy
type: journal_article
user_id: '49428'
volume: 26
year: '2011'
...
---
_id: '4549'
abstract:
- lang: eng
  text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied
    by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up
    to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant
    micro-Raman spectra at room temperature. Discrepancies in the literature regarding
    the origin of two features observed at low frequencies around 120 and 140 cm−1
    in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were
    not detected by using a low excitation laser power density on a Zn-terminated
    ZnTe surface; however, with the increase of the laser power density they were
    found to arise irreversibly. The correspondence of these peaks in a wave number
    with the strongest Raman peaks of the crystalline tellurium phase and the intensity
    enhancement behavior with the laser power in a similar way as for CdTe strongly
    suggests the formation of crystalline tellurium aggregates on the layer surface
    due to laser irradiation damage. AFM data reveal the occurrence of laser ablation
    on the ZnTe surface even though the surface temperature of the sample is below
    the melting point.
article_number: '075003'
article_type: original
author:
- first_name: E M
  full_name: Larramendi, E M
  last_name: Larramendi
- first_name: Gerhard
  full_name: Berth, Gerhard
  id: '53'
  last_name: Berth
- first_name: V
  full_name: Wiedemeier, V
  last_name: Wiedemeier
- first_name: K-P
  full_name: Hüsch, K-P
  last_name: Hüsch
- first_name: Artur
  full_name: Zrenner, Artur
  id: '606'
  last_name: Zrenner
  orcid: 0000-0002-5190-0944
- first_name: U
  full_name: Woggon, U
  last_name: Woggon
- first_name: E
  full_name: Tschumak, E
  last_name: Tschumak
- first_name: K
  full_name: Lischka, K
  last_name: Lischka
- first_name: D
  full_name: Schikora, D
  last_name: Schikora
citation:
  ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman
    modes by laser damage in ZnTe epilayers. <i>Semiconductor Science and Technology</i>.
    2010;25(7). doi:<a href="https://doi.org/10.1088/0268-1242/25/7/075003">10.1088/0268-1242/25/7/075003</a>
  apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon,
    U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage
    in ZnTe epilayers. <i>Semiconductor Science and Technology</i>, <i>25</i>(7).
    <a href="https://doi.org/10.1088/0268-1242/25/7/075003">https://doi.org/10.1088/0268-1242/25/7/075003</a>
  bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010,
    title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers},
    volume={25}, DOI={<a href="https://doi.org/10.1088/0268-1242/25/7/075003">10.1088/0268-1242/25/7/075003</a>},
    number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP
    Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and
    Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and
    Schikora, D}, year={2010} }'
  chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner,
    U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te
    Raman Modes by Laser Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>
    25, no. 7 (2010). <a href="https://doi.org/10.1088/0268-1242/25/7/075003">https://doi.org/10.1088/0268-1242/25/7/075003</a>.
  ieee: E. M. Larramendi <i>et al.</i>, “Intensity enhancement of Te Raman modes by
    laser damage in ZnTe epilayers,” <i>Semiconductor Science and Technology</i>,
    vol. 25, no. 7, 2010.
  mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser
    Damage in ZnTe Epilayers.” <i>Semiconductor Science and Technology</i>, vol. 25,
    no. 7, 075003, IOP Publishing, 2010, doi:<a href="https://doi.org/10.1088/0268-1242/25/7/075003">10.1088/0268-1242/25/7/075003</a>.
  short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon,
    E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25
    (2010).
date_created: 2018-09-20T12:35:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/25/7/075003
intvolume: '        25'
issue: '7'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
type: journal_article
user_id: '49428'
volume: 25
year: '2010'
...
---
_id: '8693'
author:
- first_name: M
  full_name: Knop, M
  last_name: Knop
- first_name: M
  full_name: Richter, M
  last_name: Richter
- first_name: R
  full_name: Maßmann, R
  last_name: Maßmann
- first_name: U
  full_name: Wieser, U
  last_name: Wieser
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: C
  full_name: Riedesel, C
  last_name: Riedesel
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices
    on GaAs/AlGaAs using negative-tone resist calixarene. <i>Semiconductor Science
    and Technology</i>. 2005:814-818. doi:<a href="https://doi.org/10.1088/0268-1242/20/8/031">10.1088/0268-1242/20/8/031</a>
  apa: Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck,
    A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
    resist calixarene. <i>Semiconductor Science and Technology</i>, 814–818. <a href="https://doi.org/10.1088/0268-1242/20/8/031">https://doi.org/10.1088/0268-1242/20/8/031</a>
  bibtex: '@article{Knop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005,
    title={Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
    resist calixarene}, DOI={<a href="https://doi.org/10.1088/0268-1242/20/8/031">10.1088/0268-1242/20/8/031</a>},
    journal={Semiconductor Science and Technology}, author={Knop, M and Richter, M
    and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and
    Wieck, A D}, year={2005}, pages={814–818} }'
  chicago: Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel,
    and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using
    Negative-Tone Resist Calixarene.” <i>Semiconductor Science and Technology</i>,
    2005, 814–18. <a href="https://doi.org/10.1088/0268-1242/20/8/031">https://doi.org/10.1088/0268-1242/20/8/031</a>.
  ieee: M. Knop <i>et al.</i>, “Preparation of electron waveguide devices on GaAs/AlGaAs
    using negative-tone resist calixarene,” <i>Semiconductor Science and Technology</i>,
    pp. 814–818, 2005.
  mla: Knop, M., et al. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs
    Using Negative-Tone Resist Calixarene.” <i>Semiconductor Science and Technology</i>,
    2005, pp. 814–18, doi:<a href="https://doi.org/10.1088/0268-1242/20/8/031">10.1088/0268-1242/20/8/031</a>.
  short: M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel,
    A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
date_created: 2019-03-27T11:16:26Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/20/8/031
language:
- iso: eng
page: 814-818
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
  resist calixarene
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8692'
author:
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: M
  full_name: Knop, M
  last_name: Knop
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum
    point contact with tuneable subband energy separation. <i>Semiconductor Science
    and Technology</i>. 2004:140-143. doi:<a href="https://doi.org/10.1088/0268-1242/20/2/006">10.1088/0268-1242/20/2/006</a>
  apa: Kähler, D., Knop, M., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2004). Dual-gate
    GaAs/AlGaAs quantum point contact with tuneable subband energy separation. <i>Semiconductor
    Science and Technology</i>, 140–143. <a href="https://doi.org/10.1088/0268-1242/20/2/006">https://doi.org/10.1088/0268-1242/20/2/006</a>
  bibtex: '@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs
    quantum point contact with tuneable subband energy separation}, DOI={<a href="https://doi.org/10.1088/0268-1242/20/2/006">10.1088/0268-1242/20/2/006</a>},
    journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M
    and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }'
  chicago: Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs
    Quantum Point Contact with Tuneable Subband Energy Separation.” <i>Semiconductor
    Science and Technology</i>, 2004, 140–43. <a href="https://doi.org/10.1088/0268-1242/20/2/006">https://doi.org/10.1088/0268-1242/20/2/006</a>.
  ieee: D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs
    quantum point contact with tuneable subband energy separation,” <i>Semiconductor
    Science and Technology</i>, pp. 140–143, 2004.
  mla: Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable
    Subband Energy Separation.” <i>Semiconductor Science and Technology</i>, 2004,
    pp. 140–43, doi:<a href="https://doi.org/10.1088/0268-1242/20/2/006">10.1088/0268-1242/20/2/006</a>.
  short: D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science
    and Technology (2004) 140–143.
date_created: 2019-03-27T11:15:10Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/20/2/006
language:
- iso: eng
page: 140-143
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '8747'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...