---
_id: '21796'
article_number: '085011'
author:
- first_name: J
full_name: Schuster, J
last_name: Schuster
- first_name: T Y
full_name: Kim, T Y
last_name: Kim
- first_name: E
full_name: Batke, E
last_name: Batke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Two-dimensional electron bound
hole photoluminescence in GaAs in perpendicular magnetic fields. Semiconductor
Science and Technology. 2020. doi:10.1088/1361-6641/ab89e1
apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2020).
Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
magnetic fields. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/ab89e1
bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2020, title={Two-dimensional electron
bound hole photoluminescence in GaAs in perpendicular magnetic fields}, DOI={10.1088/1361-6641/ab89e1},
number={085011}, journal={Semiconductor Science and Technology}, author={Schuster,
J and Kim, T Y and Batke, E and Reuter, Dirk and Wieck, A D}, year={2020} }'
chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Two-Dimensional
Electron Bound Hole Photoluminescence in GaAs in Perpendicular Magnetic Fields.”
Semiconductor Science and Technology, 2020. https://doi.org/10.1088/1361-6641/ab89e1.
ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Two-dimensional
electron bound hole photoluminescence in GaAs in perpendicular magnetic fields,”
Semiconductor Science and Technology, 2020.
mla: Schuster, J., et al. “Two-Dimensional Electron Bound Hole Photoluminescence
in GaAs in Perpendicular Magnetic Fields.” Semiconductor Science and Technology,
085011, 2020, doi:10.1088/1361-6641/ab89e1.
short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
and Technology (2020).
date_created: 2021-04-26T06:55:54Z
date_updated: 2022-01-06T06:55:13Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1361-6641/ab89e1
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Two-dimensional electron bound hole photoluminescence in GaAs in perpendicular
magnetic fields
type: journal_article
user_id: '42514'
year: '2020'
...
---
_id: '12930'
article_number: '095009'
author:
- first_name: Ronja
full_name: Köthemann, Ronja
last_name: Köthemann
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Jörg K N
full_name: Lindner, Jörg K N
last_name: Lindner
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: 'Köthemann R, Weber N, Lindner JKN, Meier C. High-precision determination of
silicon nanocrystals: optical spectroscopy versus electron microscopy. Semiconductor
Science and Technology. 2019;34(9). doi:10.1088/1361-6641/ab3536'
apa: 'Köthemann, R., Weber, N., Lindner, J. K. N., & Meier, C. (2019). High-precision
determination of silicon nanocrystals: optical spectroscopy versus electron microscopy.
Semiconductor Science and Technology, 34(9). https://doi.org/10.1088/1361-6641/ab3536'
bibtex: '@article{Köthemann_Weber_Lindner_Meier_2019, title={High-precision determination
of silicon nanocrystals: optical spectroscopy versus electron microscopy}, volume={34},
DOI={10.1088/1361-6641/ab3536},
number={9095009}, journal={Semiconductor Science and Technology}, author={Köthemann,
Ronja and Weber, Nils and Lindner, Jörg K N and Meier, Cedrik}, year={2019} }'
chicago: 'Köthemann, Ronja, Nils Weber, Jörg K N Lindner, and Cedrik Meier. “High-Precision
Determination of Silicon Nanocrystals: Optical Spectroscopy versus Electron Microscopy.”
Semiconductor Science and Technology 34, no. 9 (2019). https://doi.org/10.1088/1361-6641/ab3536.'
ieee: 'R. Köthemann, N. Weber, J. K. N. Lindner, and C. Meier, “High-precision determination
of silicon nanocrystals: optical spectroscopy versus electron microscopy,” Semiconductor
Science and Technology, vol. 34, no. 9, 2019.'
mla: 'Köthemann, Ronja, et al. “High-Precision Determination of Silicon Nanocrystals:
Optical Spectroscopy versus Electron Microscopy.” Semiconductor Science and
Technology, vol. 34, no. 9, 095009, 2019, doi:10.1088/1361-6641/ab3536.'
short: R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and
Technology 34 (2019).
date_created: 2019-08-14T11:12:33Z
date_updated: 2022-01-06T06:51:26Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '429'
- _id: '287'
doi: 10.1088/1361-6641/ab3536
intvolume: ' 34'
issue: '9'
language:
- iso: eng
project:
- _id: '53'
name: TRR 142
- _id: '55'
name: TRR 142 - Project Area B
- _id: '66'
name: TRR 142 - Subproject B1
- _id: '56'
name: TRR 142 - Project Area C
- _id: '75'
name: TRR 142 - Subproject C5
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: 'High-precision determination of silicon nanocrystals: optical spectroscopy
versus electron microscopy'
type: journal_article
user_id: '20798'
volume: 34
year: '2019'
...
---
_id: '19215'
article_number: '085002'
author:
- first_name: A
full_name: Kandemir, A
last_name: Kandemir
- first_name: B
full_name: Akbali, B
last_name: Akbali
- first_name: Z
full_name: Kahraman, Z
last_name: Kahraman
- first_name: S V
full_name: Badalov, S V
last_name: Badalov
- first_name: M
full_name: Ozcan, M
last_name: Ozcan
- first_name: F
full_name: Iyikanat, F
last_name: Iyikanat
- first_name: H
full_name: Sahin, H
last_name: Sahin
citation:
ama: 'Kandemir A, Akbali B, Kahraman Z, et al. Structural, electronic and phononic
properties of PtSe2: from monolayer to bulk. Semiconductor Science and Technology.
2018. doi:10.1088/1361-6641/aacba2'
apa: 'Kandemir, A., Akbali, B., Kahraman, Z., Badalov, S. V., Ozcan, M., Iyikanat,
F., & Sahin, H. (2018). Structural, electronic and phononic properties of
PtSe2: from monolayer to bulk. Semiconductor Science and Technology. https://doi.org/10.1088/1361-6641/aacba2'
bibtex: '@article{Kandemir_Akbali_Kahraman_Badalov_Ozcan_Iyikanat_Sahin_2018, title={Structural,
electronic and phononic properties of PtSe2: from monolayer to bulk}, DOI={10.1088/1361-6641/aacba2},
number={085002}, journal={Semiconductor Science and Technology}, author={Kandemir,
A and Akbali, B and Kahraman, Z and Badalov, S V and Ozcan, M and Iyikanat, F
and Sahin, H}, year={2018} }'
chicago: 'Kandemir, A, B Akbali, Z Kahraman, S V Badalov, M Ozcan, F Iyikanat, and
H Sahin. “Structural, Electronic and Phononic Properties of PtSe2: From Monolayer
to Bulk.” Semiconductor Science and Technology, 2018. https://doi.org/10.1088/1361-6641/aacba2.'
ieee: 'A. Kandemir et al., “Structural, electronic and phononic properties
of PtSe2: from monolayer to bulk,” Semiconductor Science and Technology,
2018.'
mla: 'Kandemir, A., et al. “Structural, Electronic and Phononic Properties of PtSe2:
From Monolayer to Bulk.” Semiconductor Science and Technology, 085002,
2018, doi:10.1088/1361-6641/aacba2.'
short: A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat,
H. Sahin, Semiconductor Science and Technology (2018).
date_created: 2020-09-09T15:54:14Z
date_updated: 2022-01-06T06:54:00Z
doi: 10.1088/1361-6641/aacba2
extern: '1'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: 'Structural, electronic and phononic properties of PtSe2: from monolayer to
bulk'
type: journal_article
user_id: '78800'
year: '2018'
...
---
_id: '7009'
article_number: '095020'
author:
- first_name: J
full_name: Schuster, J
last_name: Schuster
- first_name: T Y
full_name: Kim, T Y
last_name: Kim
- first_name: E
full_name: Batke, E
last_name: Batke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Interlayer charge transfer
in n-modulation doped Al1−x Ga x As–GaAs single heterostructures. Semiconductor
Science and Technology. 2018;33(9). doi:10.1088/1361-6641/aad83d
apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2018).
Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures.
Semiconductor Science and Technology, 33(9). https://doi.org/10.1088/1361-6641/aad83d
bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2018, title={Interlayer charge
transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures}, volume={33},
DOI={10.1088/1361-6641/aad83d},
number={9095020}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and
Wieck, A D}, year={2018} }'
chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Interlayer
Charge Transfer in N-Modulation Doped Al1−x Ga x As–GaAs Single Heterostructures.”
Semiconductor Science and Technology 33, no. 9 (2018). https://doi.org/10.1088/1361-6641/aad83d.
ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Interlayer
charge transfer in n-modulation doped Al1−x Ga x As–GaAs single heterostructures,”
Semiconductor Science and Technology, vol. 33, no. 9, 2018.
mla: Schuster, J., et al. “Interlayer Charge Transfer in N-Modulation Doped Al1−x
Ga x As–GaAs Single Heterostructures.” Semiconductor Science and Technology,
vol. 33, no. 9, 095020, IOP Publishing, 2018, doi:10.1088/1361-6641/aad83d.
short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
and Technology 33 (2018).
date_created: 2019-01-28T08:18:34Z
date_updated: 2022-01-06T07:03:26Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/1361-6641/aad83d
intvolume: ' 33'
issue: '9'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Interlayer charge transfer in n-modulation doped Al1−x Ga x As–GaAs single
heterostructures
type: journal_article
user_id: '42514'
volume: 33
year: '2018'
...
---
_id: '7282'
article_number: '085012'
author:
- first_name: J
full_name: Schuster, J
last_name: Schuster
- first_name: T Y
full_name: Kim, T Y
last_name: Kim
- first_name: E
full_name: Batke, E
last_name: Batke
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Schuster J, Kim TY, Batke E, Reuter D, Wieck AD. Influence of recombination
center interaction on the photoluminescence of AlGaAs/GaAs heterostructures. Semiconductor
Science and Technology. 2013;28(8). doi:10.1088/0268-1242/28/8/085012
apa: Schuster, J., Kim, T. Y., Batke, E., Reuter, D., & Wieck, A. D. (2013).
Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs
heterostructures. Semiconductor Science and Technology, 28(8). https://doi.org/10.1088/0268-1242/28/8/085012
bibtex: '@article{Schuster_Kim_Batke_Reuter_Wieck_2013, title={Influence of recombination
center interaction on the photoluminescence of AlGaAs/GaAs heterostructures},
volume={28}, DOI={10.1088/0268-1242/28/8/085012},
number={8085012}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Schuster, J and Kim, T Y and Batke, E and Reuter, Dirk and
Wieck, A D}, year={2013} }'
chicago: Schuster, J, T Y Kim, E Batke, Dirk Reuter, and A D Wieck. “Influence of
Recombination Center Interaction on the Photoluminescence of AlGaAs/GaAs Heterostructures.”
Semiconductor Science and Technology 28, no. 8 (2013). https://doi.org/10.1088/0268-1242/28/8/085012.
ieee: J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of
recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,”
Semiconductor Science and Technology, vol. 28, no. 8, 2013.
mla: Schuster, J., et al. “Influence of Recombination Center Interaction on the
Photoluminescence of AlGaAs/GaAs Heterostructures.” Semiconductor Science and
Technology, vol. 28, no. 8, 085012, IOP Publishing, 2013, doi:10.1088/0268-1242/28/8/085012.
short: J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science
and Technology 28 (2013).
date_created: 2019-01-31T08:01:35Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/28/8/085012
intvolume: ' 28'
issue: '8'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs
heterostructures
type: journal_article
user_id: '42514'
volume: 28
year: '2013'
...
---
_id: '7295'
article_number: '025006'
author:
- first_name: E J
full_name: Koop, E J
last_name: Koop
- first_name: M J
full_name: Iqbal, M J
last_name: Iqbal
- first_name: F
full_name: Limbach, F
last_name: Limbach
- first_name: M
full_name: Boute, M
last_name: Boute
- first_name: B J
full_name: van Wees, B J
last_name: van Wees
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
- first_name: B J
full_name: Kooi, B J
last_name: Kooi
- first_name: C H
full_name: van der Wal, C H
last_name: van der Wal
citation:
ama: Koop EJ, Iqbal MJ, Limbach F, et al. On the annealing mechanism of AuGe/Ni/Au
ohmic contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures.
Semiconductor Science and Technology. 2013;28(2). doi:10.1088/0268-1242/28/2/025006
apa: Koop, E. J., Iqbal, M. J., Limbach, F., Boute, M., van Wees, B. J., Reuter,
D., … van der Wal, C. H. (2013). On the annealing mechanism of AuGe/Ni/Au ohmic
contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures.
Semiconductor Science and Technology, 28(2). https://doi.org/10.1088/0268-1242/28/2/025006
bibtex: '@article{Koop_Iqbal_Limbach_Boute_van Wees_Reuter_Wieck_Kooi_van der Wal_2013,
title={On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional
electron gas in GaAs/AlxGa1−xAs heterostructures}, volume={28}, DOI={10.1088/0268-1242/28/2/025006},
number={2025006}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Koop, E J and Iqbal, M J and Limbach, F and Boute, M and
van Wees, B J and Reuter, Dirk and Wieck, A D and Kooi, B J and van der Wal, C
H}, year={2013} }'
chicago: Koop, E J, M J Iqbal, F Limbach, M Boute, B J van Wees, Dirk Reuter, A
D Wieck, B J Kooi, and C H van der Wal. “On the Annealing Mechanism of AuGe/Ni/Au
Ohmic Contacts to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.”
Semiconductor Science and Technology 28, no. 2 (2013). https://doi.org/10.1088/0268-1242/28/2/025006.
ieee: E. J. Koop et al., “On the annealing mechanism of AuGe/Ni/Au ohmic
contacts to a two-dimensional electron gas in GaAs/AlxGa1−xAs heterostructures,”
Semiconductor Science and Technology, vol. 28, no. 2, 2013.
mla: Koop, E. J., et al. “On the Annealing Mechanism of AuGe/Ni/Au Ohmic Contacts
to a Two-Dimensional Electron Gas in GaAs/AlxGa1−xAs Heterostructures.” Semiconductor
Science and Technology, vol. 28, no. 2, 025006, IOP Publishing, 2013, doi:10.1088/0268-1242/28/2/025006.
short: E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D.
Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
date_created: 2019-01-31T08:59:46Z
date_updated: 2022-01-06T07:03:32Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/28/2/025006
intvolume: ' 28'
issue: '2'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional
electron gas in GaAs/AlxGa1−xAs heterostructures
type: journal_article
user_id: '42514'
volume: 28
year: '2013'
...
---
_id: '4545'
abstract:
- lang: eng
text: Laser irradiation damage in ZnTe epilayers was analyzed in situ by power-density-dependent
and time-resolved micro-Raman spectroscopy. Damage by ablation or compound decomposition
on the sample surface was revealed by the decrease of the ZnTe–nLO mode intensity
with the increase of laser power density. The appearance of the peaks associated
with the stronger crystalline-tellurium modes, tellurium aggregates and second-order
Raman scattering at room temperature μ-Raman spectra was observed for higher power
densities than 4.4 × 105 W cm−2. The Raman signal time transients of ZnTe–nLO
and crystalline-tellurium modes reveal an exponential evolution of the laser irradiation
damage and a fast formation of crystalline tellurium aggregates on the layer surface.
article_number: '105023'
article_type: original
author:
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Wiedemeier V, Berth G, Zrenner A, et al. In situ characterization of ZnTe epilayer
irradiation via time-resolved and power-density-dependent Raman spectroscopy.
Semiconductor Science and Technology. 2011;26(10). doi:10.1088/0268-1242/26/10/105023
apa: Wiedemeier, V., Berth, G., Zrenner, A., Larramendi, E. M., Woggon, U., Lischka,
K., & Schikora, D. (2011). In situ characterization of ZnTe epilayer irradiation
via time-resolved and power-density-dependent Raman spectroscopy. Semiconductor
Science and Technology, 26(10). https://doi.org/10.1088/0268-1242/26/10/105023
bibtex: '@article{Wiedemeier_Berth_Zrenner_Larramendi_Woggon_Lischka_Schikora_2011,
title={In situ characterization of ZnTe epilayer irradiation via time-resolved
and power-density-dependent Raman spectroscopy}, volume={26}, DOI={10.1088/0268-1242/26/10/105023},
number={10105023}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Wiedemeier, V and Berth, Gerhard and Zrenner, Artur and Larramendi,
E M and Woggon, U and Lischka, K and Schikora, D}, year={2011} }'
chicago: Wiedemeier, V, Gerhard Berth, Artur Zrenner, E M Larramendi, U Woggon,
K Lischka, and D Schikora. “In Situ Characterization of ZnTe Epilayer Irradiation
via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor
Science and Technology 26, no. 10 (2011). https://doi.org/10.1088/0268-1242/26/10/105023.
ieee: V. Wiedemeier et al., “In situ characterization of ZnTe epilayer irradiation
via time-resolved and power-density-dependent Raman spectroscopy,” Semiconductor
Science and Technology, vol. 26, no. 10, 2011.
mla: Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation
via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.” Semiconductor
Science and Technology, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:10.1088/0268-1242/26/10/105023.
short: V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka,
D. Schikora, Semiconductor Science and Technology 26 (2011).
date_created: 2018-09-20T11:36:28Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/26/10/105023
intvolume: ' 26'
issue: '10'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: In situ characterization of ZnTe epilayer irradiation via time-resolved and
power-density-dependent Raman spectroscopy
type: journal_article
user_id: '49428'
volume: 26
year: '2011'
...
---
_id: '4549'
abstract:
- lang: eng
text: Damage caused by laser irradiation on the surface of ZnTe epilayers was studied
by micro-Raman and atomic force microscopy (AFM). ZnTe LO-phonon overtones up
to four order and TO + (n − 1)LO zone-center phonons were observed in the resonant
micro-Raman spectra at room temperature. Discrepancies in the literature regarding
the origin of two features observed at low frequencies around 120 and 140 cm−1
in the Raman spectrum of ZnTe are discussed and resolved. These Raman peaks were
not detected by using a low excitation laser power density on a Zn-terminated
ZnTe surface; however, with the increase of the laser power density they were
found to arise irreversibly. The correspondence of these peaks in a wave number
with the strongest Raman peaks of the crystalline tellurium phase and the intensity
enhancement behavior with the laser power in a similar way as for CdTe strongly
suggests the formation of crystalline tellurium aggregates on the layer surface
due to laser irradiation damage. AFM data reveal the occurrence of laser ablation
on the ZnTe surface even though the surface temperature of the sample is below
the melting point.
article_number: '075003'
article_type: original
author:
- first_name: E M
full_name: Larramendi, E M
last_name: Larramendi
- first_name: Gerhard
full_name: Berth, Gerhard
id: '53'
last_name: Berth
- first_name: V
full_name: Wiedemeier, V
last_name: Wiedemeier
- first_name: K-P
full_name: Hüsch, K-P
last_name: Hüsch
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: U
full_name: Woggon, U
last_name: Woggon
- first_name: E
full_name: Tschumak, E
last_name: Tschumak
- first_name: K
full_name: Lischka, K
last_name: Lischka
- first_name: D
full_name: Schikora, D
last_name: Schikora
citation:
ama: Larramendi EM, Berth G, Wiedemeier V, et al. Intensity enhancement of Te Raman
modes by laser damage in ZnTe epilayers. Semiconductor Science and Technology.
2010;25(7). doi:10.1088/0268-1242/25/7/075003
apa: Larramendi, E. M., Berth, G., Wiedemeier, V., Hüsch, K.-P., Zrenner, A., Woggon,
U., … Schikora, D. (2010). Intensity enhancement of Te Raman modes by laser damage
in ZnTe epilayers. Semiconductor Science and Technology, 25(7).
https://doi.org/10.1088/0268-1242/25/7/075003
bibtex: '@article{Larramendi_Berth_Wiedemeier_Hüsch_Zrenner_Woggon_Tschumak_Lischka_Schikora_2010,
title={Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers},
volume={25}, DOI={10.1088/0268-1242/25/7/075003},
number={7075003}, journal={Semiconductor Science and Technology}, publisher={IOP
Publishing}, author={Larramendi, E M and Berth, Gerhard and Wiedemeier, V and
Hüsch, K-P and Zrenner, Artur and Woggon, U and Tschumak, E and Lischka, K and
Schikora, D}, year={2010} }'
chicago: Larramendi, E M, Gerhard Berth, V Wiedemeier, K-P Hüsch, Artur Zrenner,
U Woggon, E Tschumak, K Lischka, and D Schikora. “Intensity Enhancement of Te
Raman Modes by Laser Damage in ZnTe Epilayers.” Semiconductor Science and Technology
25, no. 7 (2010). https://doi.org/10.1088/0268-1242/25/7/075003.
ieee: E. M. Larramendi et al., “Intensity enhancement of Te Raman modes by
laser damage in ZnTe epilayers,” Semiconductor Science and Technology,
vol. 25, no. 7, 2010.
mla: Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser
Damage in ZnTe Epilayers.” Semiconductor Science and Technology, vol. 25,
no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003.
short: E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon,
E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25
(2010).
date_created: 2018-09-20T12:35:35Z
date_updated: 2022-01-06T07:01:09Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1088/0268-1242/25/7/075003
intvolume: ' 25'
issue: '7'
language:
- iso: eng
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
publisher: IOP Publishing
status: public
title: Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
type: journal_article
user_id: '49428'
volume: 25
year: '2010'
...
---
_id: '8693'
author:
- first_name: M
full_name: Knop, M
last_name: Knop
- first_name: M
full_name: Richter, M
last_name: Richter
- first_name: R
full_name: Maßmann, R
last_name: Maßmann
- first_name: U
full_name: Wieser, U
last_name: Wieser
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: C
full_name: Riedesel, C
last_name: Riedesel
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Knop M, Richter M, Maßmann R, et al. Preparation of electron waveguide devices
on GaAs/AlGaAs using negative-tone resist calixarene. Semiconductor Science
and Technology. 2005:814-818. doi:10.1088/0268-1242/20/8/031
apa: Knop, M., Richter, M., Maßmann, R., Wieser, U., Kunze, U., Reuter, D., … Wieck,
A. D. (2005). Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
resist calixarene. Semiconductor Science and Technology, 814–818. https://doi.org/10.1088/0268-1242/20/8/031
bibtex: '@article{Knop_Richter_Maßmann_Wieser_Kunze_Reuter_Riedesel_Wieck_2005,
title={Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
resist calixarene}, DOI={10.1088/0268-1242/20/8/031},
journal={Semiconductor Science and Technology}, author={Knop, M and Richter, M
and Maßmann, R and Wieser, U and Kunze, U and Reuter, Dirk and Riedesel, C and
Wieck, A D}, year={2005}, pages={814–818} }'
chicago: Knop, M, M Richter, R Maßmann, U Wieser, U Kunze, Dirk Reuter, C Riedesel,
and A D Wieck. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using
Negative-Tone Resist Calixarene.” Semiconductor Science and Technology,
2005, 814–18. https://doi.org/10.1088/0268-1242/20/8/031.
ieee: M. Knop et al., “Preparation of electron waveguide devices on GaAs/AlGaAs
using negative-tone resist calixarene,” Semiconductor Science and Technology,
pp. 814–818, 2005.
mla: Knop, M., et al. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs
Using Negative-Tone Resist Calixarene.” Semiconductor Science and Technology,
2005, pp. 814–18, doi:10.1088/0268-1242/20/8/031.
short: M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel,
A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
date_created: 2019-03-27T11:16:26Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/20/8/031
language:
- iso: eng
page: 814-818
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone
resist calixarene
type: journal_article
user_id: '42514'
year: '2005'
...
---
_id: '8692'
author:
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: M
full_name: Knop, M
last_name: Knop
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Kähler D, Knop M, Kunze U, Reuter D, Wieck AD. Dual-gate GaAs/AlGaAs quantum
point contact with tuneable subband energy separation. Semiconductor Science
and Technology. 2004:140-143. doi:10.1088/0268-1242/20/2/006
apa: Kähler, D., Knop, M., Kunze, U., Reuter, D., & Wieck, A. D. (2004). Dual-gate
GaAs/AlGaAs quantum point contact with tuneable subband energy separation. Semiconductor
Science and Technology, 140–143. https://doi.org/10.1088/0268-1242/20/2/006
bibtex: '@article{Kähler_Knop_Kunze_Reuter_Wieck_2004, title={Dual-gate GaAs/AlGaAs
quantum point contact with tuneable subband energy separation}, DOI={10.1088/0268-1242/20/2/006},
journal={Semiconductor Science and Technology}, author={Kähler, D and Knop, M
and Kunze, U and Reuter, Dirk and Wieck, A D}, year={2004}, pages={140–143} }'
chicago: Kähler, D, M Knop, U Kunze, Dirk Reuter, and A D Wieck. “Dual-Gate GaAs/AlGaAs
Quantum Point Contact with Tuneable Subband Energy Separation.” Semiconductor
Science and Technology, 2004, 140–43. https://doi.org/10.1088/0268-1242/20/2/006.
ieee: D. Kähler, M. Knop, U. Kunze, D. Reuter, and A. D. Wieck, “Dual-gate GaAs/AlGaAs
quantum point contact with tuneable subband energy separation,” Semiconductor
Science and Technology, pp. 140–143, 2004.
mla: Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable
Subband Energy Separation.” Semiconductor Science and Technology, 2004,
pp. 140–43, doi:10.1088/0268-1242/20/2/006.
short: D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science
and Technology (2004) 140–143.
date_created: 2019-03-27T11:15:10Z
date_updated: 2022-01-06T07:03:59Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/20/2/006
language:
- iso: eng
page: 140-143
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
type: journal_article
user_id: '42514'
year: '2004'
...
---
_id: '8747'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor
Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated
selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
DOI={10.1088/0268-1242/16/7/314},
journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
Semiconductor Science and Technology, pp. 603–607, 2002.
mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
as a Base Material for Nanolithography.” Semiconductor Science and Technology,
2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
(2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor
Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated
selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
DOI={10.1088/0268-1242/16/7/314},
journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
Semiconductor Science and Technology, pp. 603–607, 2002.
mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
as a Base Material for Nanolithography.” Semiconductor Science and Technology,
2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
(2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...