---
_id: '8747'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor
Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated
selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
DOI={10.1088/0268-1242/16/7/314},
journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
Semiconductor Science and Technology, pp. 603–607, 2002.
mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
as a Base Material for Nanolithography.” Semiconductor Science and Technology,
2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
(2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D
full_name: Kähler, D
last_name: Kähler
- first_name: U
full_name: Kunze, U
last_name: Kunze
- first_name: A D
full_name: Wieck, A D
last_name: Wieck
citation:
ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor
Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314
apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated
selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314
bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
DOI={10.1088/0268-1242/16/7/314},
journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314.
ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
Semiconductor Science and Technology, pp. 603–607, 2002.
mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
as a Base Material for Nanolithography.” Semiconductor Science and Technology,
2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
(2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
issn:
- 0268-1242
- 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...