--- _id: '8747' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-03-29T11:24:11Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ... --- _id: '8768' author: - first_name: Dirk full_name: Reuter, Dirk id: '37763' last_name: Reuter - first_name: D full_name: Kähler, D last_name: Kähler - first_name: U full_name: Kunze, U last_name: Kunze - first_name: A D full_name: Wieck, A D last_name: Wieck citation: ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314 apa: Reuter, D., Kähler, D., Kunze, U., & Wieck, A. D. (2002). Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607. https://doi.org/10.1088/0268-1242/16/7/314 bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography}, DOI={10.1088/0268-1242/16/7/314}, journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler, D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }' chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, 603–7. https://doi.org/10.1088/0268-1242/16/7/314. ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,” Semiconductor Science and Technology, pp. 603–607, 2002. mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.” Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314. short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607. date_created: 2019-04-01T07:56:38Z date_updated: 2022-01-06T07:04:00Z department: - _id: '15' - _id: '230' doi: 10.1088/0268-1242/16/7/314 language: - iso: eng page: 603-607 publication: Semiconductor Science and Technology publication_identifier: issn: - 0268-1242 - 1361-6641 publication_status: published status: public title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography type: journal_article user_id: '42514' year: '2002' ...