---
_id: '8747'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-03-29T11:24:11Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...
---
_id: '8768'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: D
  full_name: Kähler, D
  last_name: Kähler
- first_name: U
  full_name: Kunze, U
  last_name: Kunze
- first_name: A D
  full_name: Wieck, A D
  last_name: Wieck
citation:
  ama: Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped
    AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography. <i>Semiconductor
    Science and Technology</i>. 2002:603-607. doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>
  apa: Reuter, D., Kähler, D., Kunze, U., &#38; Wieck, A. D. (2002). Layer-compensated
    selectively doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography.
    <i>Semiconductor Science and Technology</i>, 603–607. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>
  bibtex: '@article{Reuter_Kähler_Kunze_Wieck_2002, title={Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography},
    DOI={<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>},
    journal={Semiconductor Science and Technology}, author={Reuter, Dirk and Kähler,
    D and Kunze, U and Wieck, A D}, year={2002}, pages={603–607} }'
  chicago: Reuter, Dirk, D Kähler, U Kunze, and A D Wieck. “Layer-Compensated Selectively
    Doped AlxGa1-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”
    <i>Semiconductor Science and Technology</i>, 2002, 603–7. <a href="https://doi.org/10.1088/0268-1242/16/7/314">https://doi.org/10.1088/0268-1242/16/7/314</a>.
  ieee: D. Reuter, D. Kähler, U. Kunze, and A. D. Wieck, “Layer-compensated selectively
    doped AlxGa1-xAs/GaAs heterostructures as a base material for nanolithography,”
    <i>Semiconductor Science and Technology</i>, pp. 603–607, 2002.
  mla: Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxGa1-XAs/GaAs Heterostructures
    as a Base Material for Nanolithography.” <i>Semiconductor Science and Technology</i>,
    2002, pp. 603–07, doi:<a href="https://doi.org/10.1088/0268-1242/16/7/314">10.1088/0268-1242/16/7/314</a>.
  short: D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology
    (2002) 603–607.
date_created: 2019-04-01T07:56:38Z
date_updated: 2022-01-06T07:04:00Z
department:
- _id: '15'
- _id: '230'
doi: 10.1088/0268-1242/16/7/314
language:
- iso: eng
page: 603-607
publication: Semiconductor Science and Technology
publication_identifier:
  issn:
  - 0268-1242
  - 1361-6641
publication_status: published
status: public
title: Layer-compensated selectively doped AlxGa1-xAs/GaAs heterostructures as a base
  material for nanolithography
type: journal_article
user_id: '42514'
year: '2002'
...