@article{7987, author = {{Marquardt, Bastian and Geller, Martin and Lorke, Axel and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{10}}, pages = {{2598--2601}}, publisher = {{Elsevier BV}}, title = {{{A two-dimensional electron gas as a sensitive detector to observe the charge carrier dynamics of self-assembled QDs}}}, doi = {{10.1016/j.physe.2010.02.010}}, volume = {{42}}, year = {{2010}}, } @article{4551, abstract = {{An intentional positioning of optically active quantum dots using site-selective growth by a combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation in an all-ultra-high-vacuum (UHV) setup has been successfully demonstrated. A square array of periodic holes on GaAs substrate was fabricated with FIB of 30 keV ions followed by an in situ annealing step. Subsequently, the patterned holes were overgrown with an optimized amount of InAs in order to achieve site-selective growth of the QDs on the patterned holes. Under well-optimized conditions, a selectivity of single quantum dot growth in the patterned holes of 52% was achieved. Thereafter, carrier injection and subsequent radiative recombination from the positioned InAs/GaAs self-assembled QDs was investigated by embedding the QDs in the intrinsic part of a GaAs-based p–i–n junction device. Electroluminescence spectra taken at 77 K show interband transitions up to the fifth excited state from the QDs.}}, author = {{Mehta, Minisha and Reuter, Dirk and Melnikov, Alexander and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Baumgarten, Tim and Zrenner, Artur and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{Molecular beam epitaxy, Focused ion beam, Self-assembled quantum dot, Electroluminescence}}, number = {{10}}, pages = {{2749--2752}}, publisher = {{Elsevier BV}}, title = {{{Intentionally positioned self-assembled InAs quantum dots in an electroluminescent p–i–n junction diode}}}, doi = {{10.1016/j.physe.2009.12.053}}, volume = {{42}}, year = {{2010}}, } @article{4552, abstract = {{Here we report on investigations on CdSe quantum dots incorporated in ZnSe based Schottky photodiodes with near-field shadow masks. Photoluminescence and photocurrent of individual quantum dots were studied as a function of the applied bias voltage. The exciton energy of the quantum dot ground state transition was shifted to the excitation energy by using the Stark effect tuning via an external bias voltage. Under the condition of resonance with the laser excitation energy we observed a resonant photocurrent signal due to the tunnelling of carriers out of the quantum dots at electric fields above 500 kV/cm.}}, author = {{Panfilova, M. and Michaelis de Vasconcellos, S. and Pawlis, A. and Lischka, K. and Zrenner, Artur}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{CdSe/ZnSe quantum dots, Photodiode, Quantum confined Stark Effect, Photocurrent, II–VI Semiconductors}}, number = {{10}}, pages = {{2521--2523}}, publisher = {{Elsevier BV}}, title = {{{Resonant photocurrent-spectroscopy of individual CdSe quantum dots}}}, doi = {{10.1016/j.physe.2010.01.013}}, volume = {{42}}, year = {{2010}}, } @article{7993, author = {{Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and Wieck, Andreas D. and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{10}}, pages = {{2552--2555}}, publisher = {{Elsevier BV}}, title = {{{Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}}}, doi = {{10.1016/j.physe.2009.12.051}}, volume = {{42}}, year = {{2010}}, } @article{4123, abstract = {{GaAs-based semiconductor microdisks with high quality whispering gallery modes (Q44000) have been fabricated.A layer of self-organized InAs quantumdots (QDs) served as a light source to feed the optical modes at room temperature. In order to achieve frequency tuning of the optical modes, the microdisk devices have been immersed in 4 – cyano – 4´-pentylbiphenyl (5CB), a liquid crystal(LC) with a nematic phase below the clearing temperature of TC≈34°C .We have studied the device performance in the temperature rangeof T=20-50°C, in order to investigate the influence of the nematic–isotropic phase transition on the optical modes. Moreover,we havea pplied an AC electric field to the device,which leads in the nematic phase to a reorientation of the anisotropic dielectric tensor of the liquid crystal.This electrical anisotropy can be used to achieve electrical tunability of the optical modes.Using the finite-difference time domain (FDTD) technique with an anisotropic material model, we are able to describe the influence of the liquid crystal qualitatively.}}, author = {{Piegdon, Karoline A. and Offer, Matthias and Lorke, Axel and Urbanski, Martin and Hoischen, Andreas and Kitzerow, Heinz-Siegfried and Declair, Stefan and Förstner, Jens and Meier, Torsten and Reuter, Dirk and Wieck, Andreas D. and Meier, Cedrik}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{tet_topic_qd, tet_topic_microdisk}}, number = {{10}}, pages = {{2552--2555}}, publisher = {{Elsevier BV}}, title = {{{Self-assembled quantum dots in a liquid-crystal-tunable microdisk resonator}}}, doi = {{10.1016/j.physe.2009.12.051}}, volume = {{42}}, year = {{2010}}, } @article{4556, abstract = {{Very clean single photon emission from a single InGaAs/GaAs quantum dot is demonstrated by the use of a coherent optical state preparation. We present a concept for single photon emission, which uses p-shell Rabi-flopping followed by a sequence of relaxation and recombination. The proof of the (clean) single photon emission is performed by photon correlation measurements.}}, author = {{Ester, P. and Lackmann, L. and Hübner, M.C. and Michaelis de Vasconcellos, S. and Zrenner, Artur and Bichler, M.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, keywords = {{Antibunching, Single photon emission, Rabi oscillation, Coherent manipulation}}, number = {{6}}, pages = {{2004--2006}}, publisher = {{Elsevier BV}}, title = {{{p-Shell Rabi-flopping and single photon emission in an InGaAs/GaAs quantum dot}}}, doi = {{10.1016/j.physe.2007.09.129}}, volume = {{40}}, year = {{2007}}, } @article{7641, author = {{Marquardt, Bastian and Russ, Marco and Lorke, Axel and Meier, Cedrik and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, number = {{6}}, pages = {{2075--2077}}, publisher = {{Elsevier BV}}, title = {{{Quantum dots as tunable scatterers for 2D- and 1D-electron systems}}}, doi = {{10.1016/j.physe.2007.09.198}}, volume = {{40}}, year = {{2007}}, } @article{8594, author = {{Grbić, B. and Leturcq, R. and Ihn, T. and Ensslin, K. and Reuter, Dirk and Wieck, A.D.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, pages = {{2144--2146}}, title = {{{Strong spin–orbit interactions in carbon doped p-type GaAs heterostructures}}}, doi = {{10.1016/j.physe.2007.10.037}}, year = {{2007}}, } @article{8597, author = {{Grbić, Boris and Leturcq, Renaud and Ihn, Thomas and Ensslin, Klaus and Reuter, Dirk and Wieck, Andreas D.}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, pages = {{1273--1275}}, title = {{{Aharonov–Bohm oscillations in p-type GaAs quantum rings}}}, doi = {{10.1016/j.physe.2007.08.129}}, year = {{2007}}, } @article{8598, author = {{Notthoff, C. and Lorke, A. and Reuter, Dirk}}, issn = {{1386-9477}}, journal = {{Physica E: Low-dimensional Systems and Nanostructures}}, pages = {{1328--1331}}, title = {{{High sensitivity far-infrared detection by resonant inter-Landau-level scattering}}}, doi = {{10.1016/j.physe.2007.09.200}}, year = {{2007}}, }