[{"citation":{"ama":"Reuter D, Kailuweit P, Wieck AD, Zeitler U, Maan JC. Magnetic field dependence of hole levels in InAs quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:446-449. doi:<a href=\"https://doi.org/10.1016/j.physe.2004.08.078\">10.1016/j.physe.2004.08.078</a>","short":"D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, J.C. Maan, Physica E: Low-Dimensional Systems and Nanostructures (2004) 446–449.","chicago":"Reuter, Dirk, P. Kailuweit, A.D. Wieck, U. Zeitler, and J.C. Maan. “Magnetic Field Dependence of Hole Levels in InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 446–49. <a href=\"https://doi.org/10.1016/j.physe.2004.08.078\">https://doi.org/10.1016/j.physe.2004.08.078</a>.","bibtex":"@article{Reuter_Kailuweit_Wieck_Zeitler_Maan_2004, title={Magnetic field dependence of hole levels in InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2004.08.078\">10.1016/j.physe.2004.08.078</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Kailuweit, P. and Wieck, A.D. and Zeitler, U. and Maan, J.C.}, year={2004}, pages={446–449} }","mla":"Reuter, Dirk, et al. “Magnetic Field Dependence of Hole Levels in InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 446–49, doi:<a href=\"https://doi.org/10.1016/j.physe.2004.08.078\">10.1016/j.physe.2004.08.078</a>.","apa":"Reuter, D., Kailuweit, P., Wieck, A. D., Zeitler, U., &#38; Maan, J. C. (2004). Magnetic field dependence of hole levels in InAs quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 446–449. <a href=\"https://doi.org/10.1016/j.physe.2004.08.078\">https://doi.org/10.1016/j.physe.2004.08.078</a>","ieee":"D. Reuter, P. Kailuweit, A. D. Wieck, U. Zeitler, and J. C. Maan, “Magnetic field dependence of hole levels in InAs quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 446–449, 2004."},"publication":"Physica E: Low-dimensional Systems and Nanostructures","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T09:34:07Z","publication_status":"published","date_updated":"2022-01-06T07:03:58Z","author":[{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"P.","last_name":"Kailuweit","full_name":"Kailuweit, P."},{"last_name":"Wieck","first_name":"A.D.","full_name":"Wieck, A.D."},{"full_name":"Zeitler, U.","first_name":"U.","last_name":"Zeitler"},{"last_name":"Maan","first_name":"J.C.","full_name":"Maan, J.C."}],"publication_identifier":{"issn":["1386-9477"]},"year":"2004","title":"Magnetic field dependence of hole levels in InAs quantum dots","status":"public","user_id":"42514","doi":"10.1016/j.physe.2004.08.078","_id":"8680","language":[{"iso":"eng"}],"page":"446-449"},{"doi":"10.1016/j.physe.2004.08.034","user_id":"42514","language":[{"iso":"eng"}],"_id":"8688","page":"110-114","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","author":[{"full_name":"Schmidt, R.","first_name":"R.","last_name":"Schmidt"},{"full_name":"Vitzethum, M.","first_name":"M.","last_name":"Vitzethum"},{"full_name":"Fix, R.","first_name":"R.","last_name":"Fix"},{"last_name":"Scholz","first_name":"U.","full_name":"Scholz, U."},{"full_name":"Malzer, S.","last_name":"Malzer","first_name":"S."},{"full_name":"Metzner, C.","last_name":"Metzner","first_name":"C."},{"last_name":"Kailuweit","first_name":"P.","full_name":"Kailuweit, P."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A.","full_name":"Wieck, A."},{"full_name":"Hübner, M.C.","first_name":"M.C.","last_name":"Hübner"},{"full_name":"Stufler, S.","last_name":"Stufler","first_name":"S."},{"last_name":"Zrenner","first_name":"A.","full_name":"Zrenner, A."},{"full_name":"Döhler, G.H.","first_name":"G.H.","last_name":"Döhler"}],"publication_identifier":{"issn":["1386-9477"]},"year":"2004","title":"Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system","status":"public","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T10:37:10Z","citation":{"ama":"Schmidt R, Vitzethum M, Fix R, et al. Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:110-114. doi:<a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">10.1016/j.physe.2004.08.034</a>","bibtex":"@article{Schmidt_Vitzethum_Fix_Scholz_Malzer_Metzner_Kailuweit_Reuter_Wieck_Hübner_et al._2004, title={Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">10.1016/j.physe.2004.08.034</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schmidt, R. and Vitzethum, M. and Fix, R. and Scholz, U. and Malzer, S. and Metzner, C. and Kailuweit, P. and Reuter, Dirk and Wieck, A. and Hübner, M.C. and et al.}, year={2004}, pages={110–114} }","mla":"Schmidt, R., et al. “Electroluminescence of Single-Dot Nano-LEDs—Optical Spectroscopy of an Electrically Tunable Few-Electron/Hole System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 110–14, doi:<a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">10.1016/j.physe.2004.08.034</a>.","chicago":"Schmidt, R., M. Vitzethum, R. Fix, U. Scholz, S. Malzer, C. Metzner, P. Kailuweit, et al. “Electroluminescence of Single-Dot Nano-LEDs—Optical Spectroscopy of an Electrically Tunable Few-Electron/Hole System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 110–14. <a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">https://doi.org/10.1016/j.physe.2004.08.034</a>.","short":"R. Schmidt, M. Vitzethum, R. Fix, U. Scholz, S. Malzer, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2004) 110–114.","apa":"Schmidt, R., Vitzethum, M., Fix, R., Scholz, U., Malzer, S., Metzner, C., … Döhler, G. H. (2004). Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 110–114. <a href=\"https://doi.org/10.1016/j.physe.2004.08.034\">https://doi.org/10.1016/j.physe.2004.08.034</a>","ieee":"R. Schmidt <i>et al.</i>, “Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 110–114, 2004."},"publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"title":"Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures","status":"public","year":"2004","publication_identifier":{"issn":["1386-9477"]},"author":[{"first_name":"Dirk","last_name":"Kähler","full_name":"Kähler, Dirk"},{"full_name":"Kunze, Ulrich","last_name":"Kunze","first_name":"Ulrich"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"D. Wieck, Andreas","first_name":"Andreas","last_name":"D. Wieck"}],"date_updated":"2022-01-06T07:03:59Z","publication_status":"published","page":"435-439","_id":"8695","language":[{"iso":"eng"}],"doi":"10.1016/j.physe.2003.11.058","user_id":"42514","publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"mla":"Kähler, Dirk, et al. “Ultrasmall Nanoscale Devices Fabricated from Compensating-Layer GaAs/AlGaAs Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 435–39, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.058\">10.1016/j.physe.2003.11.058</a>.","apa":"Kähler, D., Kunze, U., Reuter, D., &#38; D. Wieck, A. (2004). Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 435–439. <a href=\"https://doi.org/10.1016/j.physe.2003.11.058\">https://doi.org/10.1016/j.physe.2003.11.058</a>","ieee":"D. Kähler, U. Kunze, D. Reuter, and A. D. Wieck, “Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 435–439, 2004.","chicago":"Kähler, Dirk, Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Ultrasmall Nanoscale Devices Fabricated from Compensating-Layer GaAs/AlGaAs Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 435–39. <a href=\"https://doi.org/10.1016/j.physe.2003.11.058\">https://doi.org/10.1016/j.physe.2003.11.058</a>.","ama":"Kähler D, Kunze U, Reuter D, D. Wieck A. Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:435-439. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.058\">10.1016/j.physe.2003.11.058</a>","short":"D. Kähler, U. Kunze, D. Reuter, A. D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 435–439.","bibtex":"@article{Kähler_Kunze_Reuter_D. Wieck_2004, title={Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.058\">10.1016/j.physe.2003.11.058</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Kähler, Dirk and Kunze, Ulrich and Reuter, Dirk and D. Wieck, Andreas}, year={2004}, pages={435–439} }"},"date_created":"2019-03-27T11:34:35Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"author":[{"full_name":"Riedesel, C","first_name":"C","last_name":"Riedesel"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D","first_name":"A.D","last_name":"Wieck"}],"publication_identifier":{"issn":["1386-9477"]},"title":"Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs","status":"public","year":"2004","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","language":[{"iso":"eng"}],"_id":"8697","page":"592-596","doi":"10.1016/j.physe.2003.11.085","user_id":"42514","citation":{"apa":"Riedesel, C., Reuter, D., &#38; Wieck, A. . (2004). Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 592–596. <a href=\"https://doi.org/10.1016/j.physe.2003.11.085\">https://doi.org/10.1016/j.physe.2003.11.085</a>","ieee":"C. Riedesel, D. Reuter, and A. . Wieck, “Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 592–596, 2004.","short":"C. Riedesel, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 592–596.","chicago":"Riedesel, C, Dirk Reuter, and A.D Wieck. “Laterally Patterned High Mobility Two-Dimensional Electron Gases Obtained by Overgrowth of Focused Ion Beam Implanted Al1−xGaxAs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 592–96. <a href=\"https://doi.org/10.1016/j.physe.2003.11.085\">https://doi.org/10.1016/j.physe.2003.11.085</a>.","mla":"Riedesel, C., et al. “Laterally Patterned High Mobility Two-Dimensional Electron Gases Obtained by Overgrowth of Focused Ion Beam Implanted Al1−xGaxAs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 592–96, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.085\">10.1016/j.physe.2003.11.085</a>.","ama":"Riedesel C, Reuter D, Wieck A. Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:592-596. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.085\">10.1016/j.physe.2003.11.085</a>","bibtex":"@article{Riedesel_Reuter_Wieck_2004, title={Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1−xGaxAs}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.085\">10.1016/j.physe.2003.11.085</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Riedesel, C and Reuter, Dirk and Wieck, A.D}, year={2004}, pages={592–596} }"},"publication":"Physica E: Low-dimensional Systems and Nanostructures","date_created":"2019-03-27T11:45:26Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article"},{"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","status":"public","title":"Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots","year":"2004","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"first_name":"P.","last_name":"Schafmeister","full_name":"Schafmeister, P."},{"full_name":"Kailuweit, P.","last_name":"Kailuweit","first_name":"P."},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"user_id":"42514","doi":"10.1016/j.physe.2003.11.055","page":"445-450","_id":"8698","language":[{"iso":"eng"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"ieee":"D. Reuter, P. Schafmeister, P. Kailuweit, and A. D. Wieck, “Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 445–450, 2004.","apa":"Reuter, D., Schafmeister, P., Kailuweit, P., &#38; Wieck, A. D. (2004). Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 445–450. <a href=\"https://doi.org/10.1016/j.physe.2003.11.055\">https://doi.org/10.1016/j.physe.2003.11.055</a>","short":"D. Reuter, P. Schafmeister, P. Kailuweit, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 445–450.","chicago":"Reuter, Dirk, P. Schafmeister, P. Kailuweit, and A.D. Wieck. “Frequency-Dependent C(V) Spectroscopy of the Hole System in InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 445–50. <a href=\"https://doi.org/10.1016/j.physe.2003.11.055\">https://doi.org/10.1016/j.physe.2003.11.055</a>.","mla":"Reuter, Dirk, et al. “Frequency-Dependent C(V) Spectroscopy of the Hole System in InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 445–50, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.055\">10.1016/j.physe.2003.11.055</a>.","bibtex":"@article{Reuter_Schafmeister_Kailuweit_Wieck_2004, title={Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.055\">10.1016/j.physe.2003.11.055</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Schafmeister, P. and Kailuweit, P. and Wieck, A.D.}, year={2004}, pages={445–450} }","ama":"Reuter D, Schafmeister P, Kailuweit P, Wieck AD. Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:445-450. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.055\">10.1016/j.physe.2003.11.055</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T11:46:27Z"},{"user_id":"42514","doi":"10.1016/j.physe.2003.11.141","_id":"8699","language":[{"iso":"eng"}],"page":"872-875","publication_status":"published","date_updated":"2022-01-06T07:03:59Z","publication_identifier":{"issn":["1386-9477"]},"author":[{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A","last_name":"Seekamp","full_name":"Seekamp, A"},{"first_name":"A.D","last_name":"Wieck","full_name":"Wieck, A.D"}],"title":"Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure","year":"2004","status":"public","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T11:48:36Z","citation":{"chicago":"Reuter, Dirk, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 872–75. <a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">https://doi.org/10.1016/j.physe.2003.11.141</a>.","short":"D. Reuter, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 872–875.","ieee":"D. Reuter, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 872–875, 2004.","apa":"Reuter, D., Seekamp, A., &#38; Wieck, A. . (2004). Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 872–875. <a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">https://doi.org/10.1016/j.physe.2003.11.141</a>","bibtex":"@article{Reuter_Seekamp_Wieck_2004, title={Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Seekamp, A and Wieck, A.D}, year={2004}, pages={872–875} }","ama":"Reuter D, Seekamp A, Wieck A. Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:872-875. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional n- and p-Type in-Plane Gate Transistors from the Same p-Doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As Heterostructure.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 872–75, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.141\">10.1016/j.physe.2003.11.141</a>."},"publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"bibtex":"@article{Regul_Hohls_Reuter_Wieck_Haug_2004, title={High frequency conductance of a quantum point contact}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.266\">10.1016/j.physe.2003.11.266</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Regul, J. and Hohls, F. and Reuter, Dirk and Wieck, A.D. and Haug, R.J.}, year={2004}, pages={272–275} }","ama":"Regul J, Hohls F, Reuter D, Wieck AD, Haug RJ. High frequency conductance of a quantum point contact. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:272-275. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.266\">10.1016/j.physe.2003.11.266</a>","mla":"Regul, J., et al. “High Frequency Conductance of a Quantum Point Contact.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 272–75, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.266\">10.1016/j.physe.2003.11.266</a>.","short":"J. Regul, F. Hohls, D. Reuter, A.D. Wieck, R.J. Haug, Physica E: Low-Dimensional Systems and Nanostructures (2004) 272–275.","chicago":"Regul, J., F. Hohls, Dirk Reuter, A.D. Wieck, and R.J. Haug. “High Frequency Conductance of a Quantum Point Contact.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 272–75. <a href=\"https://doi.org/10.1016/j.physe.2003.11.266\">https://doi.org/10.1016/j.physe.2003.11.266</a>.","ieee":"J. Regul, F. Hohls, D. Reuter, A. D. Wieck, and R. J. Haug, “High frequency conductance of a quantum point contact,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 272–275, 2004.","apa":"Regul, J., Hohls, F., Reuter, D., Wieck, A. D., &#38; Haug, R. J. (2004). High frequency conductance of a quantum point contact. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 272–275. <a href=\"https://doi.org/10.1016/j.physe.2003.11.266\">https://doi.org/10.1016/j.physe.2003.11.266</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T11:51:46Z","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","status":"public","title":"High frequency conductance of a quantum point contact","year":"2004","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Regul, J.","last_name":"Regul","first_name":"J."},{"full_name":"Hohls, F.","last_name":"Hohls","first_name":"F."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D.","first_name":"A.D.","last_name":"Wieck"},{"full_name":"Haug, R.J.","last_name":"Haug","first_name":"R.J."}],"doi":"10.1016/j.physe.2003.11.266","user_id":"42514","page":"272-275","_id":"8700","language":[{"iso":"eng"}]},{"date_created":"2019-03-27T11:55:18Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"bibtex":"@article{Reuter_Werner_Riedesel_Wieck_Schuster_Hansen_2004, title={Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Werner, C. and Riedesel, C. and Wieck, A.D. and Schuster, D. and Hansen, W.}, year={2004}, pages={725–728} }","ama":"Reuter D, Werner C, Riedesel C, Wieck AD, Schuster D, Hansen W. Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:725-728. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>","short":"D. Reuter, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, W. Hansen, Physica E: Low-Dimensional Systems and Nanostructures (2004) 725–728.","chicago":"Reuter, Dirk, C. Werner, C. Riedesel, A.D. Wieck, D. Schuster, and W. Hansen. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 725–28. <a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">https://doi.org/10.1016/j.physe.2003.12.109</a>.","ieee":"D. Reuter, C. Werner, C. Riedesel, A. D. Wieck, D. Schuster, and W. Hansen, “Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 725–728, 2004.","apa":"Reuter, D., Werner, C., Riedesel, C., Wieck, A. D., Schuster, D., &#38; Hansen, W. (2004). Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 725–728. <a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">https://doi.org/10.1016/j.physe.2003.12.109</a>","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional p–n Junctions Formed by Compensation Doping of p-Modulation Doped GaAs/InyGa1−yAs/AlxGa1−x As Heterostructures.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 725–28, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.109\">10.1016/j.physe.2003.12.109</a>."},"page":"725-728","_id":"8701","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1016/j.physe.2003.12.109","status":"public","title":"Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures","year":"2004","publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Werner, C.","first_name":"C.","last_name":"Werner"},{"first_name":"C.","last_name":"Riedesel","full_name":"Riedesel, C."},{"full_name":"Wieck, A.D.","first_name":"A.D.","last_name":"Wieck"},{"first_name":"D.","last_name":"Schuster","full_name":"Schuster, D."},{"first_name":"W.","last_name":"Hansen","full_name":"Hansen, W."}],"publication_status":"published","date_updated":"2022-01-06T07:03:59Z"},{"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","year":"2004","title":"Self-assembled quantum dots as probes for Landau-level spectroscopy","status":"public","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Russ, M","first_name":"M","last_name":"Russ"},{"full_name":"Lorke, A","last_name":"Lorke","first_name":"A"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Schafmeister, P","last_name":"Schafmeister","first_name":"P"}],"user_id":"42514","doi":"10.1016/j.physe.2003.12.056","page":"506-509","language":[{"iso":"eng"}],"_id":"8702","publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"short":"M. Russ, A. Lorke, D. Reuter, P. Schafmeister, Physica E: Low-Dimensional Systems and Nanostructures (2004) 506–509.","ama":"Russ M, Lorke A, Reuter D, Schafmeister P. Self-assembled quantum dots as probes for Landau-level spectroscopy. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:506-509. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.056\">10.1016/j.physe.2003.12.056</a>","chicago":"Russ, M, A Lorke, Dirk Reuter, and P Schafmeister. “Self-Assembled Quantum Dots as Probes for Landau-Level Spectroscopy.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 506–9. <a href=\"https://doi.org/10.1016/j.physe.2003.12.056\">https://doi.org/10.1016/j.physe.2003.12.056</a>.","bibtex":"@article{Russ_Lorke_Reuter_Schafmeister_2004, title={Self-assembled quantum dots as probes for Landau-level spectroscopy}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.12.056\">10.1016/j.physe.2003.12.056</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Russ, M and Lorke, A and Reuter, Dirk and Schafmeister, P}, year={2004}, pages={506–509} }","mla":"Russ, M., et al. “Self-Assembled Quantum Dots as Probes for Landau-Level Spectroscopy.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 506–09, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.12.056\">10.1016/j.physe.2003.12.056</a>.","apa":"Russ, M., Lorke, A., Reuter, D., &#38; Schafmeister, P. (2004). Self-assembled quantum dots as probes for Landau-level spectroscopy. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 506–509. <a href=\"https://doi.org/10.1016/j.physe.2003.12.056\">https://doi.org/10.1016/j.physe.2003.12.056</a>","ieee":"M. Russ, A. Lorke, D. Reuter, and P. Schafmeister, “Self-assembled quantum dots as probes for Landau-level spectroscopy,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 506–509, 2004."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T11:56:04Z"},{"department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-27T11:57:03Z","citation":{"apa":"Würtz, A., Deviatov, E. V., Lorke, A., Dolgopolov, V. T., Reuter, D., &#38; Wieck, A. D. (2004). Separately contacted edge states in the fractional quantum Hall regime. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 177–180. <a href=\"https://doi.org/10.1016/j.physe.2003.11.244\">https://doi.org/10.1016/j.physe.2003.11.244</a>","ieee":"A. Würtz, E. V. Deviatov, A. Lorke, V. T. Dolgopolov, D. Reuter, and A. D. Wieck, “Separately contacted edge states in the fractional quantum Hall regime,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 177–180, 2004.","short":"A. Würtz, E.V. Deviatov, A. Lorke, V.T. Dolgopolov, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 177–180.","chicago":"Würtz, A., E.V. Deviatov, A. Lorke, V.T. Dolgopolov, Dirk Reuter, and A.D. Wieck. “Separately Contacted Edge States in the Fractional Quantum Hall Regime.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 177–80. <a href=\"https://doi.org/10.1016/j.physe.2003.11.244\">https://doi.org/10.1016/j.physe.2003.11.244</a>.","mla":"Würtz, A., et al. “Separately Contacted Edge States in the Fractional Quantum Hall Regime.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 177–80, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.244\">10.1016/j.physe.2003.11.244</a>.","ama":"Würtz A, Deviatov EV, Lorke A, Dolgopolov VT, Reuter D, Wieck AD. Separately contacted edge states in the fractional quantum Hall regime. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:177-180. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.244\">10.1016/j.physe.2003.11.244</a>","bibtex":"@article{Würtz_Deviatov_Lorke_Dolgopolov_Reuter_Wieck_2004, title={Separately contacted edge states in the fractional quantum Hall regime}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.244\">10.1016/j.physe.2003.11.244</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Würtz, A. and Deviatov, E.V. and Lorke, A. and Dolgopolov, V.T. and Reuter, Dirk and Wieck, A.D.}, year={2004}, pages={177–180} }"},"publication":"Physica E: Low-dimensional Systems and Nanostructures","doi":"10.1016/j.physe.2003.11.244","user_id":"42514","language":[{"iso":"eng"}],"_id":"8703","page":"177-180","date_updated":"2022-01-06T07:03:59Z","publication_status":"published","author":[{"full_name":"Würtz, A.","first_name":"A.","last_name":"Würtz"},{"first_name":"E.V.","last_name":"Deviatov","full_name":"Deviatov, E.V."},{"full_name":"Lorke, A.","first_name":"A.","last_name":"Lorke"},{"full_name":"Dolgopolov, V.T.","last_name":"Dolgopolov","first_name":"V.T."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"last_name":"Wieck","first_name":"A.D.","full_name":"Wieck, A.D."}],"publication_identifier":{"issn":["1386-9477"]},"title":"Separately contacted edge states in the fractional quantum Hall regime","status":"public","year":"2004"},{"year":"2004","title":"Magnetization of multi-component two-dimensional quantum-Hall systems","status":"public","author":[{"full_name":"Schaapman, M.R.","first_name":"M.R.","last_name":"Schaapman"},{"last_name":"Zeitler","first_name":"U.","full_name":"Zeitler, U."},{"last_name":"Christianen","first_name":"P.C.M.","full_name":"Christianen, P.C.M."},{"last_name":"Maan","first_name":"J.C.","full_name":"Maan, J.C."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D.","first_name":"A.D.","last_name":"Wieck"}],"publication_identifier":{"issn":["1386-9477"]},"publication_status":"published","date_updated":"2022-01-06T07:03:59Z","page":"86-89","language":[{"iso":"eng"}],"_id":"8705","user_id":"42514","doi":"10.1016/j.physe.2003.11.222","publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"ama":"Schaapman MR, Zeitler U, Christianen PCM, Maan JC, Reuter D, Wieck AD. Magnetization of multi-component two-dimensional quantum-Hall systems. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2004:86-89. doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.222\">10.1016/j.physe.2003.11.222</a>","short":"M.R. Schaapman, U. Zeitler, P.C.M. Christianen, J.C. Maan, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 86–89.","chicago":"Schaapman, M.R., U. Zeitler, P.C.M. Christianen, J.C. Maan, Dirk Reuter, and A.D. Wieck. “Magnetization of Multi-Component Two-Dimensional Quantum-Hall Systems.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, 86–89. <a href=\"https://doi.org/10.1016/j.physe.2003.11.222\">https://doi.org/10.1016/j.physe.2003.11.222</a>.","bibtex":"@article{Schaapman_Zeitler_Christianen_Maan_Reuter_Wieck_2004, title={Magnetization of multi-component two-dimensional quantum-Hall systems}, DOI={<a href=\"https://doi.org/10.1016/j.physe.2003.11.222\">10.1016/j.physe.2003.11.222</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schaapman, M.R. and Zeitler, U. and Christianen, P.C.M. and Maan, J.C. and Reuter, Dirk and Wieck, A.D.}, year={2004}, pages={86–89} }","apa":"Schaapman, M. R., Zeitler, U., Christianen, P. C. M., Maan, J. C., Reuter, D., &#38; Wieck, A. D. (2004). Magnetization of multi-component two-dimensional quantum-Hall systems. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 86–89. <a href=\"https://doi.org/10.1016/j.physe.2003.11.222\">https://doi.org/10.1016/j.physe.2003.11.222</a>","mla":"Schaapman, M. R., et al. “Magnetization of Multi-Component Two-Dimensional Quantum-Hall Systems.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2004, pp. 86–89, doi:<a href=\"https://doi.org/10.1016/j.physe.2003.11.222\">10.1016/j.physe.2003.11.222</a>.","ieee":"M. R. Schaapman, U. Zeitler, P. C. M. Christianen, J. C. Maan, D. Reuter, and A. D. Wieck, “Magnetization of multi-component two-dimensional quantum-Hall systems,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 86–89, 2004."},"date_created":"2019-03-27T12:14:02Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"citation":{"apa":"Riedesel, C., Meier, C., Schafmeister, P., Reuter, D., &#38; Wieck, A. . (2003). Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>17</i>, 503–504. <a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">https://doi.org/10.1016/s1386-9477(02)00849-4</a>","ieee":"C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, and A. . Wieck, “Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 17, pp. 503–504, 2003.","chicago":"Riedesel, C, Cedrik Meier, P Schafmeister, D Reuter, and A.D Wieck. “Fabrication of High Quality Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam Implantation Doped AlxGa1−xAs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 17 (2003): 503–4. <a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">https://doi.org/10.1016/s1386-9477(02)00849-4</a>.","short":"C. Riedesel, C. Meier, P. Schafmeister, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 17 (2003) 503–504.","mla":"Riedesel, C., et al. “Fabrication of High Quality Two-Dimensional Electron Gases by Overgrowth of Focused Ion Beam Implantation Doped AlxGa1−xAs.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 17, Elsevier BV, 2003, pp. 503–04, doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">10.1016/s1386-9477(02)00849-4</a>.","ama":"Riedesel C, Meier C, Schafmeister P, Reuter D, Wieck A. Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2003;17:503-504. doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">10.1016/s1386-9477(02)00849-4</a>","bibtex":"@article{Riedesel_Meier_Schafmeister_Reuter_Wieck_2003, title={Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs}, volume={17}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(02)00849-4\">10.1016/s1386-9477(02)00849-4</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, publisher={Elsevier BV}, author={Riedesel, C and Meier, Cedrik and Schafmeister, P and Reuter, D and Wieck, A.D}, year={2003}, pages={503–504} }"},"status":"public","volume":17,"user_id":"20798","publisher":"Elsevier BV","_id":"7682","page":"503-504","extern":"1","publication":"Physica E: Low-dimensional Systems and Nanostructures","department":[{"_id":"15"}],"type":"journal_article","date_created":"2019-02-13T14:50:50Z","intvolume":"        17","date_updated":"2022-01-06T07:03:43Z","publication_status":"published","author":[{"full_name":"Riedesel, C","first_name":"C","last_name":"Riedesel"},{"full_name":"Meier, Cedrik","last_name":"Meier","first_name":"Cedrik","orcid":"https://orcid.org/0000-0002-3787-3572","id":"20798"},{"first_name":"P","last_name":"Schafmeister","full_name":"Schafmeister, P"},{"full_name":"Reuter, D","first_name":"D","last_name":"Reuter"},{"full_name":"Wieck, A.D","first_name":"A.D","last_name":"Wieck"}],"publication_identifier":{"issn":["1386-9477"]},"year":"2003","title":"Fabrication of high quality two-dimensional electron gases by overgrowth of focused ion beam implantation doped AlxGa1−xAs","doi":"10.1016/s1386-9477(02)00849-4","language":[{"iso":"eng"}]},{"citation":{"bibtex":"@article{Naud_Faini_Mailly_Vidal_Douçot_Montambaux_Wieck_Reuter_2002, title={Aharonov–Bohm cages in the GaAlAs/GaAs system}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">10.1016/s1386-9477(01)00307-1</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Naud, C. and Faini, G. and Mailly, D. and Vidal, J. and Douçot, B. and Montambaux, G. and Wieck, A. and Reuter, Dirk}, year={2002}, pages={190–196} }","ama":"Naud C, Faini G, Mailly D, et al. Aharonov–Bohm cages in the GaAlAs/GaAs system. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:190-196. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">10.1016/s1386-9477(01)00307-1</a>","mla":"Naud, C., et al. “Aharonov–Bohm Cages in the GaAlAs/GaAs System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 190–96, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">10.1016/s1386-9477(01)00307-1</a>.","chicago":"Naud, C., G. Faini, D. Mailly, J. Vidal, B. Douçot, G. Montambaux, A. Wieck, and Dirk Reuter. “Aharonov–Bohm Cages in the GaAlAs/GaAs System.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 190–96. <a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">https://doi.org/10.1016/s1386-9477(01)00307-1</a>.","short":"C. Naud, G. Faini, D. Mailly, J. Vidal, B. Douçot, G. Montambaux, A. Wieck, D. Reuter, Physica E: Low-Dimensional Systems and Nanostructures (2002) 190–196.","ieee":"C. Naud <i>et al.</i>, “Aharonov–Bohm cages in the GaAlAs/GaAs system,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 190–196, 2002.","apa":"Naud, C., Faini, G., Mailly, D., Vidal, J., Douçot, B., Montambaux, G., … Reuter, D. (2002). Aharonov–Bohm cages in the GaAlAs/GaAs system. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 190–196. <a href=\"https://doi.org/10.1016/s1386-9477(01)00307-1\">https://doi.org/10.1016/s1386-9477(01)00307-1</a>"},"publication":"Physica E: Low-dimensional Systems and Nanostructures","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","date_created":"2019-03-28T15:11:31Z","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","publication_identifier":{"issn":["1386-9477"]},"author":[{"full_name":"Naud, C.","first_name":"C.","last_name":"Naud"},{"full_name":"Faini, G.","first_name":"G.","last_name":"Faini"},{"first_name":"D.","last_name":"Mailly","full_name":"Mailly, D."},{"full_name":"Vidal, J.","last_name":"Vidal","first_name":"J."},{"full_name":"Douçot, B.","last_name":"Douçot","first_name":"B."},{"full_name":"Montambaux, G.","first_name":"G.","last_name":"Montambaux"},{"full_name":"Wieck, A.","last_name":"Wieck","first_name":"A."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"}],"status":"public","year":"2002","title":"Aharonov–Bohm cages in the GaAlAs/GaAs system","user_id":"42514","doi":"10.1016/s1386-9477(01)00307-1","_id":"8734","language":[{"iso":"eng"}],"page":"190-196"},{"title":"Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping","year":"2002","status":"public","publication_identifier":{"issn":["1386-9477"]},"author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","first_name":"Cedrik","full_name":"Meier, Cedrik","id":"20798"},{"last_name":"Seekamp","first_name":"A","full_name":"Seekamp, A"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"date_updated":"2022-01-06T07:04:00Z","publication_status":"published","intvolume":"        13","page":"938-941","_id":"8737","language":[{"iso":"eng"}],"doi":"10.1016/s1386-9477(02)00239-4","user_id":"20798","volume":13,"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"bibtex":"@article{Reuter_Meier_Seekamp_Wieck_2002, title={Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping}, volume={13}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Reuter, Dirk and Meier, Cedrik and Seekamp, A and Wieck, A.D}, year={2002}, pages={938–941} }","ama":"Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002;13:938-941. doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>","mla":"Reuter, Dirk, et al. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, vol. 13, 2002, pp. 938–41, doi:<a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">10.1016/s1386-9477(02)00239-4</a>.","short":"D. Reuter, C. Meier, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures 13 (2002) 938–941.","chicago":"Reuter, Dirk, Cedrik Meier, A Seekamp, and A.D Wieck. “Fabrication of Two-Dimensional in-Plane Gate Transistors by Focused Ion Beam Doping.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i> 13 (2002): 938–41. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>.","ieee":"D. Reuter, C. Meier, A. Seekamp, and A. . Wieck, “Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, vol. 13, pp. 938–941, 2002.","apa":"Reuter, D., Meier, C., Seekamp, A., &#38; Wieck, A. . (2002). Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, <i>13</i>, 938–941. <a href=\"https://doi.org/10.1016/s1386-9477(02)00239-4\">https://doi.org/10.1016/s1386-9477(02)00239-4</a>"},"date_created":"2019-03-28T15:14:19Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}]},{"page":"474-477","_id":"8742","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1016/s1386-9477(01)00342-3","title":"Phonon excitation of a two-dimensional electron system around ν=1","status":"public","year":"2002","author":[{"full_name":"Schulze-Wischeler, F.","first_name":"F.","last_name":"Schulze-Wischeler"},{"full_name":"Zeitler, U.","last_name":"Zeitler","first_name":"U."},{"full_name":"Hohls, F.","first_name":"F.","last_name":"Hohls"},{"full_name":"Haug, R.J.","last_name":"Haug","first_name":"R.J."},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."}],"publication_identifier":{"issn":["1386-9477"]},"publication_status":"published","date_updated":"2022-01-06T07:04:00Z","date_created":"2019-03-28T15:18:43Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"mla":"Schulze-Wischeler, F., et al. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 474–77, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>.","apa":"Schulze-Wischeler, F., Zeitler, U., Hohls, F., Haug, R. J., Reuter, D., &#38; Wieck, A. D. (2002). Phonon excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 474–477. <a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">https://doi.org/10.1016/s1386-9477(01)00342-3</a>","ieee":"F. Schulze-Wischeler, U. Zeitler, F. Hohls, R. J. Haug, D. Reuter, and A. D. Wieck, “Phonon excitation of a two-dimensional electron system around ν=1,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 474–477, 2002.","short":"F. Schulze-Wischeler, U. Zeitler, F. Hohls, R.J. Haug, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 474–477.","ama":"Schulze-Wischeler F, Zeitler U, Hohls F, Haug RJ, Reuter D, Wieck AD. Phonon excitation of a two-dimensional electron system around ν=1. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:474-477. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>","chicago":"Schulze-Wischeler, F., U. Zeitler, F. Hohls, R.J. Haug, Dirk Reuter, and A.D. Wieck. “Phonon Excitation of a Two-Dimensional Electron System around Ν=1.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 474–77. <a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">https://doi.org/10.1016/s1386-9477(01)00342-3</a>.","bibtex":"@article{Schulze-Wischeler_Zeitler_Hohls_Haug_Reuter_Wieck_2002, title={Phonon excitation of a two-dimensional electron system around ν=1}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00342-3\">10.1016/s1386-9477(01)00342-3</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schulze-Wischeler, F. and Zeitler, U. and Hohls, F. and Haug, R.J. and Reuter, Dirk and Wieck, A.D.}, year={2002}, pages={474–477} }"}},{"language":[{"iso":"eng"}],"_id":"8743","page":"143-146","user_id":"42514","doi":"10.1016/s1386-9477(01)00506-9","publication_identifier":{"issn":["1386-9477"]},"author":[{"first_name":"M.","last_name":"Vitzethum","full_name":"Vitzethum, M."},{"full_name":"Schmidt, R.","first_name":"R.","last_name":"Schmidt"},{"first_name":"P.","last_name":"Kiesel","full_name":"Kiesel, P."},{"full_name":"Schafmeister, P.","last_name":"Schafmeister","first_name":"P."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"full_name":"Wieck, A.D.","last_name":"Wieck","first_name":"A.D."},{"full_name":"Döhler, G.H.","first_name":"G.H.","last_name":"Döhler"}],"title":"Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam","status":"public","year":"2002","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","date_created":"2019-03-28T15:19:16Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"apa":"Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Reuter, D., Wieck, A. D., &#38; Döhler, G. H. (2002). Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 143–146. <a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">https://doi.org/10.1016/s1386-9477(01)00506-9</a>","mla":"Vitzethum, M., et al. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 143–46, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>.","ieee":"M. Vitzethum <i>et al.</i>, “Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 143–146, 2002.","ama":"Vitzethum M, Schmidt R, Kiesel P, et al. Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:143-146. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>","short":"M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 143–146.","chicago":"Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, Dirk Reuter, A.D. Wieck, and G.H. Döhler. “Quantum Dot Micro-LEDs for the Study of Few-Dot Electroluminescence, Fabricated by Focussed Ion Beam.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 143–46. <a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">https://doi.org/10.1016/s1386-9477(01)00506-9</a>.","bibtex":"@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Reuter_Wieck_Döhler_2002, title={Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00506-9\">10.1016/s1386-9477(01)00506-9</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum, M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Reuter, Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={143–146} }"},"publication":"Physica E: Low-dimensional Systems and Nanostructures"},{"date_created":"2019-03-28T15:19:48Z","type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"publication":"Physica E: Low-dimensional Systems and Nanostructures","citation":{"chicago":"Vitzethum, M., R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, Dirk Reuter, A.D. Wieck, and G.H. Döhler. “A Novel Photoconductive Detector for Single Photon Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 570–73. <a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">https://doi.org/10.1016/s1386-9477(01)00475-1</a>.","short":"M. Vitzethum, R. Schmidt, P. Kiesel, P. Schafmeister, J. Koch, D. Reuter, A.D. Wieck, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2002) 570–573.","apa":"Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Koch, J., Reuter, D., … Döhler, G. H. (2002). A novel photoconductive detector for single photon detection. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 570–573. <a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">https://doi.org/10.1016/s1386-9477(01)00475-1</a>","ieee":"M. Vitzethum <i>et al.</i>, “A novel photoconductive detector for single photon detection,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 570–573, 2002.","ama":"Vitzethum M, Schmidt R, Kiesel P, et al. A novel photoconductive detector for single photon detection. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:570-573. doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>","bibtex":"@article{Vitzethum_Schmidt_Kiesel_Schafmeister_Koch_Reuter_Wieck_Döhler_2002, title={A novel photoconductive detector for single photon detection}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Vitzethum, M. and Schmidt, R. and Kiesel, P. and Schafmeister, P. and Koch, J. and Reuter, Dirk and Wieck, A.D. and Döhler, G.H.}, year={2002}, pages={570–573} }","mla":"Vitzethum, M., et al. “A Novel Photoconductive Detector for Single Photon Detection.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 570–73, doi:<a href=\"https://doi.org/10.1016/s1386-9477(01)00475-1\">10.1016/s1386-9477(01)00475-1</a>."},"page":"570-573","_id":"8744","language":[{"iso":"eng"}],"user_id":"42514","doi":"10.1016/s1386-9477(01)00475-1","title":"A novel photoconductive detector for single photon detection","year":"2002","status":"public","publication_identifier":{"issn":["1386-9477"]},"author":[{"first_name":"M.","last_name":"Vitzethum","full_name":"Vitzethum, M."},{"first_name":"R.","last_name":"Schmidt","full_name":"Schmidt, R."},{"last_name":"Kiesel","first_name":"P.","full_name":"Kiesel, P."},{"first_name":"P.","last_name":"Schafmeister","full_name":"Schafmeister, P."},{"full_name":"Koch, J.","first_name":"J.","last_name":"Koch"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A.D.","last_name":"Wieck","full_name":"Wieck, A.D."},{"full_name":"Döhler, G.H.","first_name":"G.H.","last_name":"Döhler"}],"publication_status":"published","date_updated":"2022-01-06T07:04:00Z"},{"author":[{"first_name":"K.H","last_name":"Schmidt","full_name":"Schmidt, K.H"},{"full_name":"Versen, M","first_name":"M","last_name":"Versen"},{"last_name":"Bock","first_name":"C","full_name":"Bock, C"},{"full_name":"Kunze, U","last_name":"Kunze","first_name":"U"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A.D","last_name":"Wieck","first_name":"A.D"}],"publication_identifier":{"issn":["1386-9477"]},"year":"2002","title":"In-plane and perpendicular tunneling through InAs quantum dots","status":"public","publication_status":"published","date_updated":"2022-01-06T07:04:00Z","_id":"8774","language":[{"iso":"eng"}],"page":"425-429","user_id":"42514","doi":"10.1016/s1386-9477(99)00354-9","citation":{"chicago":"Schmidt, K.H, M Versen, C Bock, U Kunze, Dirk Reuter, and A.D Wieck. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, 425–29. <a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">https://doi.org/10.1016/s1386-9477(99)00354-9</a>.","short":"K.. Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2002) 425–429.","ieee":"K. . Schmidt, M. Versen, C. Bock, U. Kunze, D. Reuter, and A. . Wieck, “In-plane and perpendicular tunneling through InAs quantum dots,” <i>Physica E: Low-dimensional Systems and Nanostructures</i>, pp. 425–429, 2002.","apa":"Schmidt, K. ., Versen, M., Bock, C., Kunze, U., Reuter, D., &#38; Wieck, A. . (2002). In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 425–429. <a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">https://doi.org/10.1016/s1386-9477(99)00354-9</a>","bibtex":"@article{Schmidt_Versen_Bock_Kunze_Reuter_Wieck_2002, title={In-plane and perpendicular tunneling through InAs quantum dots}, DOI={<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>}, journal={Physica E: Low-dimensional Systems and Nanostructures}, author={Schmidt, K.H and Versen, M and Bock, C and Kunze, U and Reuter, Dirk and Wieck, A.D}, year={2002}, pages={425–429} }","ama":"Schmidt K., Versen M, Bock C, Kunze U, Reuter D, Wieck A. In-plane and perpendicular tunneling through InAs quantum dots. <i>Physica E: Low-dimensional Systems and Nanostructures</i>. 2002:425-429. doi:<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>","mla":"Schmidt, K. .., et al. “In-Plane and Perpendicular Tunneling through InAs Quantum Dots.” <i>Physica E: Low-Dimensional Systems and Nanostructures</i>, 2002, pp. 425–29, doi:<a href=\"https://doi.org/10.1016/s1386-9477(99)00354-9\">10.1016/s1386-9477(99)00354-9</a>."},"publication":"Physica E: Low-dimensional Systems and Nanostructures","date_created":"2019-04-01T08:13:43Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article"}]