@article{46132, author = {{Littmann, Mario and Reuter, Dirk and As, Donat Josef}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{7}}, publisher = {{Wiley}}, title = {{{Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}}}, doi = {{10.1002/pssb.202300034}}, volume = {{260}}, year = {{2023}}, } @article{35232, author = {{Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, publisher = {{Wiley}}, title = {{{Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}}}, doi = {{10.1002/pssb.202200508}}, year = {{2022}}, } @article{37656, author = {{Glahn, Luis Joel and Ruiz Alvarado, Isaac Azahel and Neufeld, Sergej and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Ostheimer, David and Shekarabi, Sahar and Romanyuk, Oleksandr and Moritz, Dominik Christian and Hofmann, Jan Philipp and Jaegermann, Wolfram and Hannappel, Thomas and Schmidt, Wolf Gero}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{11}}, publisher = {{Wiley}}, title = {{{Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties}}}, doi = {{10.1002/pssb.202200308}}, volume = {{259}}, year = {{2022}}, } @article{40244, author = {{Meier, Lukas and Schmidt, Wolf Gero}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{1}}, publisher = {{Wiley}}, title = {{{GaInP/AlInP(001) Interfaces from Density Functional Theory}}}, doi = {{10.1002/pssb.202100462}}, volume = {{259}}, year = {{2021}}, } @article{23840, author = {{Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, title = {{{Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}}}, doi = {{10.1002/pssb.201900522}}, year = {{2020}}, } @article{23841, author = {{Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, title = {{{Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N}}}, doi = {{10.1002/pssb.201900532}}, year = {{2020}}, } @article{40233, author = {{Meier, Lukas and Braun, Christian and Hannappel, Thomas and Schmidt, Wolf Gero}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{2}}, publisher = {{Wiley}}, title = {{{Band Alignment at Ga x In 1– x P/Al y In 1– y P Alloy Interfaces from Hybrid Density Functional Theory Calculations}}}, doi = {{10.1002/pssb.202000463}}, volume = {{258}}, year = {{2020}}, } @article{15444, author = {{Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, title = {{{Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al x Ga 1− x N}}}, doi = {{10.1002/pssb.201900532}}, year = {{2019}}, } @article{17065, author = {{Esser, Norbert and Schmidt, Wolf Gero}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{256}}, title = {{{Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution}}}, doi = {{10.1002/pssb.201800314}}, year = {{2018}}, } @article{4210, abstract = {{In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of reasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown samples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.}}, author = {{Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{7}}, pages = {{1753--1756}}, publisher = {{Wiley}}, title = {{{Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}}}, doi = {{10.1002/pssb.200983537}}, volume = {{247}}, year = {{2010}}, } @article{13831, author = {{Speiser, E. and Chandola, S. and Hinrichs, K. and Gensch, M. and Cobet, C. and Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Richter, W. and Fleischer, K. and McGilp, J. F. and Esser, N.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{8}}, pages = {{2033--2039}}, title = {{{Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy}}}, doi = {{10.1002/pssb.200983961}}, volume = {{247}}, year = {{2010}}, } @article{13835, author = {{Scholle, A. and Greulich-Weber, S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and Rauls, E. and Schmidt, Wolf Gero}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{7}}, pages = {{1728--1731}}, title = {{{Magnetic characterization of conductance electrons in GaN}}}, doi = {{10.1002/pssb.200983582}}, volume = {{247}}, year = {{2010}}, } @article{8593, author = {{Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, pages = {{276--283}}, title = {{{Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}}}, doi = {{10.1002/pssb.200743345}}, year = {{2008}}, } @article{1752, author = {{Nau, D. and Schönhardt, A. and Bauer, C. and Christ, A. and Zentgraf, Thomas and Kuhl, J. and Giessen, H.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{10}}, pages = {{2331--2343}}, publisher = {{Wiley-Blackwell}}, title = {{{Disorder issues in metallic photonic crystals}}}, doi = {{10.1002/pssb.200668054}}, volume = {{243}}, year = {{2006}}, } @article{1753, author = {{Christ, A. and Zentgraf, Thomas and Tikhodeev, S. G. and Gippius, N. A. and Martin, O. J. F. and Kuhl, J. and Giessen, H.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{10}}, pages = {{2344--2348}}, publisher = {{Wiley-Blackwell}}, title = {{{Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal}}}, doi = {{10.1002/pssb.200668055}}, volume = {{243}}, year = {{2006}}, } @article{8668, author = {{Reuter, Dirk and Kailuweit, P. and Roescu, R. and Wieck, A. D. and Wibbelhoff, O. S. and Lorke, A. and Zeitler, U. and Maan, J. C.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, pages = {{3942--3945}}, title = {{{Hole and electron wave functions in self-assembled InAs quantum dots: a comparison}}}, doi = {{10.1002/pssb.200671520}}, year = {{2006}}, } @article{8669, author = {{Oulton, R. and Verbin, S. Yu. and Auer, T. and Cherbunin, R. V. and Greilich, A. and Yakovlev, D. R. and Bayer, M. and Reuter, Dirk and Wieck, A.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, pages = {{3922--3927}}, title = {{{Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei}}}, doi = {{10.1002/pssb.200671529}}, year = {{2006}}, } @article{29686, author = {{Ehresmann, A. and Engel, D. and Weis, T. and Schindler, A. and Junk, D. and Schmalhorst, J. and Höink, V. and Sacher, Marc and Reiss, G.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, keywords = {{Condensed Matter Physics, Electronic, Optical and Magnetic Materials}}, number = {{1}}, pages = {{29--36}}, publisher = {{Wiley}}, title = {{{Fundamentals for magnetic patterning by ion bombardment of exchange bias layer systems}}}, doi = {{10.1002/pssb.200562442}}, volume = {{243}}, year = {{2006}}, } @article{13698, author = {{Schmidt, Wolf Gero}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{13}}, pages = {{2751--2764}}, title = {{{Calculation of reflectance anisotropy for semiconductor surface exploration}}}, doi = {{10.1002/pssb.200541112}}, volume = {{242}}, year = {{2005}}, } @article{13699, author = {{Hahn, P. H. and Seino, K. and Schmidt, Wolf Gero and Furthmüller, J. and Bechstedt, F.}}, issn = {{0370-1972}}, journal = {{physica status solidi (b)}}, number = {{13}}, pages = {{2720--2728}}, title = {{{Quasiparticle and excitonic effects in the optical spectra of diamond, SiC, Si, GaP, GaAs, InP, and AlN}}}, doi = {{10.1002/pssb.200541128}}, volume = {{242}}, year = {{2005}}, }