[{"user_id":"20798","volume":263,"_id":"65741","publisher":"Wiley","status":"public","citation":{"short":"D.J. As, F. Meier, P. Mahler, C. Meier, Physica Status Solidi (b) 263 (2026).","chicago":"As, Donat Josef, Falco Meier, Pascal Mahler, and Cedrik Meier. “X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates.” <i>Physica Status Solidi (b)</i> 263, no. 2 (2026). <a href=\"https://doi.org/10.1002/pssb.202500477\">https://doi.org/10.1002/pssb.202500477</a>.","apa":"As, D. J., Meier, F., Mahler, P., &#38; Meier, C. (2026). X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates. <i>Physica Status Solidi (b)</i>, <i>263</i>(2), Article e202500477. <a href=\"https://doi.org/10.1002/pssb.202500477\">https://doi.org/10.1002/pssb.202500477</a>","ieee":"D. J. As, F. Meier, P. Mahler, and C. Meier, “X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates,” <i>physica status solidi (b)</i>, vol. 263, no. 2, Art. no. e202500477, 2026, doi: <a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>.","ama":"As DJ, Meier F, Mahler P, Meier C. X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates. <i>physica status solidi (b)</i>. 2026;263(2). doi:<a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>","bibtex":"@article{As_Meier_Mahler_Meier_2026, title={X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates}, volume={263}, DOI={<a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>}, number={2e202500477}, journal={physica status solidi (b)}, publisher={Wiley}, author={As, Donat Josef and Meier, Falco and Mahler, Pascal and Meier, Cedrik}, year={2026} }","mla":"As, Donat Josef, et al. “X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates.” <i>Physica Status Solidi (b)</i>, vol. 263, no. 2, e202500477, Wiley, 2026, doi:<a href=\"https://doi.org/10.1002/pssb.202500477\">10.1002/pssb.202500477</a>."},"doi":"10.1002/pssb.202500477","article_number":"e202500477","language":[{"iso":"eng"}],"date_updated":"2026-06-01T09:23:41Z","publication_status":"published","intvolume":"       263","article_type":"original","year":"2026","title":"X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"id":"14","orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat Josef","full_name":"As, Donat Josef"},{"full_name":"Meier, Falco","last_name":"Meier","first_name":"Falco"},{"first_name":"Pascal","last_name":"Mahler","full_name":"Mahler, Pascal"},{"id":"20798","full_name":"Meier, Cedrik","first_name":"Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"}],"type":"journal_article","department":[{"_id":"15"}],"date_created":"2026-06-01T09:22:04Z","abstract":[{"text":"<jats:p>\r\n                    This work investigates the temperature dependence of the lattice constant\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n                    of cubic GaN/3C‐SiC/Si (001) epilayers grown at 740°C by plasma‐assisted molecular beam epitaxy is investigated. High resolution X‐ray diffraction is performed to determine the lattice constant, using an Anton–Paar DHS1100 stage to vary the sample temperature from 25°C to 900°C, calibrated against the underlying single‐crystalline silicon substrate. A linear increase in\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n                    with rising temperature is observed. The thermal expansion behaviour is modelled using Debye´s phonon dispersion. The fitted lattice parameters are used to calculate the thermal expansion coefficient (TEC). At room temperature the TEC is determined to be\r\n                    <jats:italic>α</jats:italic>\r\n                    <jats:sub>Debye </jats:sub>\r\n                    ≈ 5.25 × 10\r\n                    <jats:sup>−6</jats:sup>\r\n                     K\r\n                    <jats:sup>−1</jats:sup>\r\n                    . We further compare the TEC of the cubic GaN epilayer to that of free‐standing hexagonal GaN using the crystallographic relationship of , demonstrating good agreement between both phases. Using literature values for the elastic constants of cubic GaN, the corresponding elastic moduli and Debye temperature Θ\r\n                    <jats:sub>D</jats:sub>\r\n                    are calculated. An average value of Θ\r\n                    <jats:sub>D</jats:sub>\r\n                    of ≈905 ± 25 K is obtained, which is very close to our experimental results. Moreover, tensile strain is found to be present in our sample at room temperature, leading to an increase in the TEC. The impact of strain on the thermal properties of cubic GaN is discussed.\r\n                  </jats:p>","lang":"eng"}],"issue":"2","publication":"physica status solidi (b)"},{"date_created":"2023-07-25T08:06:13Z","type":"journal_article","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"15"},{"_id":"230"}],"publication":"physica status solidi (b)","issue":"7","language":[{"iso":"eng"}],"doi":"10.1002/pssb.202300034","year":"2023","title":"Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Littmann, Mario","first_name":"Mario","last_name":"Littmann"},{"full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk","id":"37763"},{"last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat Josef","full_name":"As, Donat Josef","id":"14"}],"publication_status":"published","date_updated":"2023-07-25T08:07:20Z","intvolume":"       260","citation":{"ieee":"M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,” <i>physica status solidi (b)</i>, vol. 260, no. 7, 2023, doi: <a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","apa":"Littmann, M., Reuter, D., &#38; As, D. J. (2023). Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>Physica Status Solidi (b)</i>, <i>260</i>(7). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>","chicago":"Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 260, no. 7 (2023). <a href=\"https://doi.org/10.1002/pssb.202300034\">https://doi.org/10.1002/pssb.202300034</a>.","short":"M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).","mla":"Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status Solidi (b)</i>, vol. 260, no. 7, Wiley, 2023, doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>.","bibtex":"@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy}, volume={260}, DOI={<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann, Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }","ama":"Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>physica status solidi (b)</i>. 2023;260(7). doi:<a href=\"https://doi.org/10.1002/pssb.202300034\">10.1002/pssb.202300034</a>"},"publisher":"Wiley","_id":"46132","user_id":"42514","volume":260,"status":"public"},{"publication":"physica status solidi (b)","citation":{"ama":"Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. <i>physica status solidi (b)</i>. Published online 2022. doi:<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>","bibtex":"@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>}, number={2200508}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner, Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }","mla":"Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2200508, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>.","chicago":"Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool, Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2022. <a href=\"https://doi.org/10.1002/pssb.202200508\">https://doi.org/10.1002/pssb.202200508</a>.","short":"F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).","apa":"Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter, D., &#38; As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks. <i>Physica Status Solidi (b)</i>, Article 2200508. <a href=\"https://doi.org/10.1002/pssb.202200508\">https://doi.org/10.1002/pssb.202200508</a>","ieee":"F. Meier <i>et al.</i>, “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks,” <i>physica status solidi (b)</i>, Art. no. 2200508, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200508\">10.1002/pssb.202200508</a>."},"keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"15"}],"date_created":"2023-01-04T14:51:51Z","publication_status":"published","date_updated":"2023-01-04T14:53:24Z","status":"public","year":"2022","title":"Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks","author":[{"last_name":"Meier","first_name":"Falco","full_name":"Meier, Falco"},{"last_name":"Littmann","first_name":"Mario","full_name":"Littmann, Mario"},{"last_name":"Bürger","first_name":"Julius","full_name":"Bürger, Julius","id":"46952"},{"full_name":"Riedl, Thomas","first_name":"Thomas","last_name":"Riedl","id":"36950"},{"last_name":"Kool","first_name":"Daniel","full_name":"Kool, Daniel","id":"44586"},{"id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg","last_name":"Lindner"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"id":"14","full_name":"As, Donat Josef","last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"user_id":"77496","doi":"10.1002/pssb.202200508","article_number":"2200508","_id":"35232","language":[{"iso":"eng"}],"publisher":"Wiley"},{"project":[{"name":"TRR 142: TRR 142 - Maßgeschneiderte nichtlineare Photonik: Von grundlegenden Konzepten zu funktionellen Strukturen","_id":"53","grant_number":"231447078"},{"_id":"55","name":"TRR 142 - B: TRR 142 - Project Area B"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"citation":{"mla":"Kozub, Agnieszka L., et al. “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons.” <i>Physica Status Solidi (b)</i>, vol. 260, no. 2, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>.","bibtex":"@article{Kozub_Gerstmann_Schmidt_2022, title={Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons}, volume={260}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>}, number={2}, journal={physica status solidi (b)}, publisher={Wiley}, author={Kozub, Agnieszka L. and Gerstmann, Uwe and Schmidt, Wolf Gero}, year={2022} }","ama":"Kozub AL, Gerstmann U, Schmidt WG. Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons. <i>physica status solidi (b)</i>. 2022;260(2). doi:<a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>","ieee":"A. L. Kozub, U. Gerstmann, and W. G. Schmidt, “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons,” <i>physica status solidi (b)</i>, vol. 260, no. 2, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200453\">10.1002/pssb.202200453</a>.","apa":"Kozub, A. L., Gerstmann, U., &#38; Schmidt, W. G. (2022). Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons. <i>Physica Status Solidi (b)</i>, <i>260</i>(2). <a href=\"https://doi.org/10.1002/pssb.202200453\">https://doi.org/10.1002/pssb.202200453</a>","short":"A.L. Kozub, U. Gerstmann, W.G. Schmidt, Physica Status Solidi (b) 260 (2022).","chicago":"Kozub, Agnieszka L., Uwe Gerstmann, and Wolf Gero Schmidt. “Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons.” <i>Physica Status Solidi (b)</i> 260, no. 2 (2022). <a href=\"https://doi.org/10.1002/pssb.202200453\">https://doi.org/10.1002/pssb.202200453</a>."},"user_id":"16199","volume":260,"publisher":"Wiley","_id":"54849","status":"public","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"790"},{"_id":"230"},{"_id":"429"},{"_id":"27"}],"date_created":"2024-06-24T05:59:11Z","abstract":[{"text":"<jats:sec><jats:label /><jats:p>The third‐order susceptibility  of lithium niobate (LiNbO<jats:sub>3</jats:sub>) is calculated within a Berry‐phase formulation of the dynamical polarization based on the electronic structure obtained within density‐functional theory (DFT). Maximum  values of the order of  m V are calculated for photon energies between 1.2 and 2 eV, i.e., in the lower half of the optical bandgap of lithium niobate. Both free and bound electron (bi)polarons are found to lead to a remarkable enhancement of the third‐order susceptibility for photon energies below 1 eV.</jats:p></jats:sec>","lang":"eng"}],"publication":"physica status solidi (b)","issue":"2","doi":"10.1002/pssb.202200453","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2024-06-24T06:02:58Z","intvolume":"       260","title":"Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons","year":"2022","author":[{"last_name":"Kozub","first_name":"Agnieszka L.","full_name":"Kozub, Agnieszka L."},{"id":"171","full_name":"Gerstmann, Uwe","orcid":"0000-0002-4476-223X","first_name":"Uwe","last_name":"Gerstmann"},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","id":"468"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]}},{"project":[{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"citation":{"mla":"Glahn, Luis Joel, et al. “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties.” <i>Physica Status Solidi (b)</i>, vol. 259, no. 11, 2200308, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>.","bibtex":"@article{Glahn_Ruiz Alvarado_Neufeld_Zare Pour_Paszuk_Ostheimer_Shekarabi_Romanyuk_Moritz_Hofmann_et al._2022, title={Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties}, volume={259}, DOI={<a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>}, number={112200308}, journal={physica status solidi (b)}, publisher={Wiley}, author={Glahn, Luis Joel and Ruiz Alvarado, Isaac Azahel and Neufeld, Sergej and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Ostheimer, David and Shekarabi, Sahar and Romanyuk, Oleksandr and Moritz, Dominik Christian and Hofmann, Jan Philipp and et al.}, year={2022} }","ama":"Glahn LJ, Ruiz Alvarado IA, Neufeld S, et al. Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties. <i>physica status solidi (b)</i>. 2022;259(11). doi:<a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>","ieee":"L. J. Glahn <i>et al.</i>, “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties,” <i>physica status solidi (b)</i>, vol. 259, no. 11, Art. no. 2200308, 2022, doi: <a href=\"https://doi.org/10.1002/pssb.202200308\">10.1002/pssb.202200308</a>.","apa":"Glahn, L. J., Ruiz Alvarado, I. A., Neufeld, S., Zare Pour, M. A., Paszuk, A., Ostheimer, D., Shekarabi, S., Romanyuk, O., Moritz, D. C., Hofmann, J. P., Jaegermann, W., Hannappel, T., &#38; Schmidt, W. G. (2022). Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties. <i>Physica Status Solidi (b)</i>, <i>259</i>(11), Article 2200308. <a href=\"https://doi.org/10.1002/pssb.202200308\">https://doi.org/10.1002/pssb.202200308</a>","chicago":"Glahn, Luis Joel, Isaac Azahel Ruiz Alvarado, Sergej Neufeld, Mohammad Amin Zare Pour, Agnieszka Paszuk, David Ostheimer, Sahar Shekarabi, et al. “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties.” <i>Physica Status Solidi (b)</i> 259, no. 11 (2022). <a href=\"https://doi.org/10.1002/pssb.202200308\">https://doi.org/10.1002/pssb.202200308</a>.","short":"L.J. Glahn, I.A. Ruiz Alvarado, S. Neufeld, M.A. Zare Pour, A. Paszuk, D. Ostheimer, S. Shekarabi, O. Romanyuk, D.C. Moritz, J.P. Hofmann, W. Jaegermann, T. Hannappel, W.G. Schmidt, Physica Status Solidi (b) 259 (2022)."},"status":"public","user_id":"16199","volume":259,"_id":"37656","publisher":"Wiley","publication":"physica status solidi (b)","issue":"11","type":"journal_article","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}],"date_created":"2023-01-20T09:19:43Z","date_updated":"2023-04-20T13:59:01Z","publication_status":"published","intvolume":"       259","title":"Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties","year":"2022","author":[{"full_name":"Glahn, Luis Joel","last_name":"Glahn","first_name":"Luis Joel"},{"full_name":"Ruiz Alvarado, Isaac Azahel","last_name":"Ruiz Alvarado","first_name":"Isaac Azahel","orcid":"0000-0002-4710-1170","id":"79462"},{"full_name":"Neufeld, Sergej","first_name":"Sergej","last_name":"Neufeld"},{"last_name":"Zare Pour","first_name":"Mohammad Amin","full_name":"Zare Pour, Mohammad Amin"},{"full_name":"Paszuk, Agnieszka","last_name":"Paszuk","first_name":"Agnieszka"},{"full_name":"Ostheimer, David","first_name":"David","last_name":"Ostheimer"},{"first_name":"Sahar","last_name":"Shekarabi","full_name":"Shekarabi, Sahar"},{"full_name":"Romanyuk, Oleksandr","first_name":"Oleksandr","last_name":"Romanyuk"},{"full_name":"Moritz, Dominik Christian","last_name":"Moritz","first_name":"Dominik Christian"},{"full_name":"Hofmann, Jan Philipp","first_name":"Jan Philipp","last_name":"Hofmann"},{"last_name":"Jaegermann","first_name":"Wolfram","full_name":"Jaegermann, Wolfram"},{"full_name":"Hannappel, Thomas","first_name":"Thomas","last_name":"Hannappel"},{"full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero","id":"468"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"doi":"10.1002/pssb.202200308","article_number":"2200308","language":[{"iso":"eng"}]},{"status":"public","publisher":"Wiley","_id":"40244","user_id":"16199","volume":259,"citation":{"mla":"Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from Density Functional Theory.” <i>Physica Status Solidi (b)</i>, vol. 259, no. 1, 2100462, Wiley, 2021, doi:<a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>.","ama":"Meier L, Schmidt WG. GaInP/AlInP(001) Interfaces from Density Functional Theory. <i>physica status solidi (b)</i>. 2021;259(1). doi:<a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>","bibtex":"@article{Meier_Schmidt_2021, title={GaInP/AlInP(001) Interfaces from Density Functional Theory}, volume={259}, DOI={<a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>}, number={12100462}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Lukas and Schmidt, Wolf Gero}, year={2021} }","apa":"Meier, L., &#38; Schmidt, W. G. (2021). GaInP/AlInP(001) Interfaces from Density Functional Theory. <i>Physica Status Solidi (b)</i>, <i>259</i>(1), Article 2100462. <a href=\"https://doi.org/10.1002/pssb.202100462\">https://doi.org/10.1002/pssb.202100462</a>","ieee":"L. Meier and W. G. Schmidt, “GaInP/AlInP(001) Interfaces from Density Functional Theory,” <i>physica status solidi (b)</i>, vol. 259, no. 1, Art. no. 2100462, 2021, doi: <a href=\"https://doi.org/10.1002/pssb.202100462\">10.1002/pssb.202100462</a>.","short":"L. Meier, W.G. Schmidt, Physica Status Solidi (b) 259 (2021).","chicago":"Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from Density Functional Theory.” <i>Physica Status Solidi (b)</i> 259, no. 1 (2021). <a href=\"https://doi.org/10.1002/pssb.202100462\">https://doi.org/10.1002/pssb.202100462</a>."},"project":[{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"title":"GaInP/AlInP(001) Interfaces from Density Functional Theory","year":"2021","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"last_name":"Meier","first_name":"Lukas","full_name":"Meier, Lukas"},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"}],"publication_status":"published","date_updated":"2023-04-20T14:28:22Z","intvolume":"       259","article_number":"2100462","language":[{"iso":"eng"}],"doi":"10.1002/pssb.202100462","issue":"1","publication":"physica status solidi (b)","date_created":"2023-01-26T09:41:51Z","keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}]},{"doi":"10.1002/pssb.201900522","user_id":"14","language":[{"iso":"eng"}],"_id":"23840","article_number":"1900522","date_updated":"2022-01-06T06:56:01Z","publication_status":"published","author":[{"first_name":"Elias","last_name":"Baron","full_name":"Baron, Elias"},{"first_name":"Rüdiger","last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger"},{"full_name":"Deppe, Michael","last_name":"Deppe","first_name":"Michael"},{"full_name":"As, Donat Josef","last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","id":"14"},{"last_name":"Feneberg","first_name":"Martin","full_name":"Feneberg, Martin"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2020","title":"Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN","status":"public","department":[{"_id":"230"},{"_id":"429"}],"type":"journal_article","date_created":"2021-09-07T09:17:31Z","citation":{"bibtex":"@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>}, number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin}, year={2020} }","ama":"Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>","mla":"Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 1900522, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900522\">10.1002/pssb.201900522</a>.","chicago":"Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900522\">https://doi.org/10.1002/pssb.201900522</a>.","short":"E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi (B) (2020).","ieee":"E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” <i>physica status solidi (b)</i>, 2020.","apa":"Baron, E., Goldhahn, R., Deppe, M., As, D. J., &#38; Feneberg, M. (2020). Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>Physica Status Solidi (B)</i>. <a href=\"https://doi.org/10.1002/pssb.201900522\">https://doi.org/10.1002/pssb.201900522</a>"},"publication":"physica status solidi (b)"},{"language":[{"iso":"eng"}],"_id":"23841","article_number":"1900532","user_id":"14","doi":"10.1002/pssb.201900532","author":[{"last_name":"Deppe","first_name":"Michael","full_name":"Deppe, Michael"},{"first_name":"Tobias","last_name":"Henksmeier","full_name":"Henksmeier, Tobias"},{"full_name":"Gerlach, Jürgen W.","first_name":"Jürgen W.","last_name":"Gerlach"},{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"As, Donat Josef","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As","id":"14"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"status":"public","year":"2020","title":"Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N","publication_status":"published","date_updated":"2022-01-06T06:56:01Z","date_created":"2021-09-07T09:18:26Z","department":[{"_id":"230"},{"_id":"429"}],"type":"journal_article","citation":{"ama":"Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>physica status solidi (b)</i>. 2020. doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>","bibtex":"@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef}, year={2020} }","mla":"Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 1900532, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","short":"M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (B) (2020).","chicago":"Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (B)</i>, 2020. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>.","apa":"Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2020). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>Physica Status Solidi (B)</i>. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>","ieee":"M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” <i>physica status solidi (b)</i>, 2020."},"publication":"physica status solidi (b)"},{"citation":{"ama":"Meier L, Braun C, Hannappel T, Schmidt WG. Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations. <i>physica status solidi (b)</i>. 2020;258(2). doi:<a href=\"https://doi.org/10.1002/pssb.202000463\">10.1002/pssb.202000463</a>","bibtex":"@article{Meier_Braun_Hannappel_Schmidt_2020, title={Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations}, volume={258}, DOI={<a href=\"https://doi.org/10.1002/pssb.202000463\">10.1002/pssb.202000463</a>}, number={22000463}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Lukas and Braun, Christian and Hannappel, Thomas and Schmidt, Wolf Gero}, year={2020} }","mla":"Meier, Lukas, et al. “Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations.” <i>Physica Status Solidi (b)</i>, vol. 258, no. 2, 2000463, Wiley, 2020, doi:<a href=\"https://doi.org/10.1002/pssb.202000463\">10.1002/pssb.202000463</a>.","chicago":"Meier, Lukas, Christian Braun, Thomas Hannappel, and Wolf Gero Schmidt. “Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations.” <i>Physica Status Solidi (b)</i> 258, no. 2 (2020). <a href=\"https://doi.org/10.1002/pssb.202000463\">https://doi.org/10.1002/pssb.202000463</a>.","short":"L. Meier, C. Braun, T. Hannappel, W.G. Schmidt, Physica Status Solidi (b) 258 (2020).","apa":"Meier, L., Braun, C., Hannappel, T., &#38; Schmidt, W. G. (2020). Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations. <i>Physica Status Solidi (b)</i>, <i>258</i>(2), Article 2000463. <a href=\"https://doi.org/10.1002/pssb.202000463\">https://doi.org/10.1002/pssb.202000463</a>","ieee":"L. Meier, C. Braun, T. Hannappel, and W. G. Schmidt, “Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations,” <i>physica status solidi (b)</i>, vol. 258, no. 2, Art. no. 2000463, 2020, doi: <a href=\"https://doi.org/10.1002/pssb.202000463\">10.1002/pssb.202000463</a>."},"project":[{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"status":"public","_id":"40233","publisher":"Wiley","volume":258,"user_id":"16199","issue":"2","publication":"physica status solidi (b)","date_created":"2023-01-26T09:33:46Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}],"keyword":["Condensed Matter Physics","Electronic","Optical and Magnetic Materials"],"type":"journal_article","author":[{"full_name":"Meier, Lukas","last_name":"Meier","first_name":"Lukas"},{"full_name":"Braun, Christian","last_name":"Braun","first_name":"Christian"},{"first_name":"Thomas","last_name":"Hannappel","full_name":"Hannappel, Thomas"},{"id":"468","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2020","title":"Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations","intvolume":"       258","date_updated":"2023-04-20T14:18:36Z","publication_status":"published","language":[{"iso":"eng"}],"article_number":"2000463","doi":"10.1002/pssb.202000463"},{"user_id":"14931","doi":"10.1002/pssb.201900532","language":[{"iso":"eng"}],"_id":"15444","article_number":"1900532","main_file_link":[{"open_access":"1"}],"publication_status":"published","date_updated":"2023-10-09T09:03:47Z","author":[{"first_name":"Michael","last_name":"Deppe","full_name":"Deppe, Michael"},{"last_name":"Henksmeier","first_name":"Tobias","full_name":"Henksmeier, Tobias"},{"full_name":"Gerlach, Jürgen W.","first_name":"Jürgen W.","last_name":"Gerlach"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"orcid":"0000-0003-1121-3565","last_name":"As","first_name":"Donat J.","full_name":"As, Donat J.","id":"14"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2019","status":"public","title":"Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N","department":[{"_id":"15"},{"_id":"230"}],"oa":"1","type":"journal_article","date_created":"2020-01-07T10:09:27Z","citation":{"ieee":"M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N,” <i>physica status solidi (b)</i>, Art. no. 1900532, 2019, doi: <a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","apa":"Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2019). Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>Physica Status Solidi (b)</i>, Article 1900532. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>","chicago":"Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (b)</i>, 2019. <a href=\"https://doi.org/10.1002/pssb.201900532\">https://doi.org/10.1002/pssb.201900532</a>.","short":"M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status Solidi (b) (2019).","mla":"Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N.” <i>Physica Status Solidi (b)</i>, 1900532, 2019, doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>.","bibtex":"@article{Deppe_Henksmeier_Gerlach_Reuter_As_2019, title={Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N}, DOI={<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>}, number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.}, year={2019} }","ama":"Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al                          x                        Ga            1−                          x                        N. <i>physica status solidi (b)</i>. Published online 2019. doi:<a href=\"https://doi.org/10.1002/pssb.201900532\">10.1002/pssb.201900532</a>"},"publication":"physica status solidi (b)"},{"publication_status":"published","date_updated":"2025-12-16T11:30:05Z","status":"public","year":"2018","title":"Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution","author":[{"last_name":"Esser","first_name":"Norbert","full_name":"Esser, Norbert"},{"id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero"}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"user_id":"16199","doi":"10.1002/pssb.201800314","article_number":"1800314","_id":"17065","language":[{"iso":"eng"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"name":"TRR 142: TRR 142","_id":"53"},{"_id":"55","name":"TRR 142 - B: TRR 142 - Project Area B"},{"_id":"69","name":"TRR 142 - B4: TRR 142 - Subproject B4"}],"publication":"physica status solidi (b)","issue":"256","citation":{"bibtex":"@article{Esser_Schmidt_2018, title={Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution}, DOI={<a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>}, number={2561800314}, journal={physica status solidi (b)}, author={Esser, Norbert and Schmidt, Wolf Gero}, year={2018} }","ama":"Esser N, Schmidt WG. Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. <i>physica status solidi (b)</i>. 2018;(256). doi:<a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>","short":"N. Esser, W.G. Schmidt, Physica Status Solidi (b) (2018).","chicago":"Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution.” <i>Physica Status Solidi (b)</i>, no. 256 (2018). <a href=\"https://doi.org/10.1002/pssb.201800314\">https://doi.org/10.1002/pssb.201800314</a>.","ieee":"N. Esser and W. G. Schmidt, “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution,” <i>physica status solidi (b)</i>, no. 256, Art. no. 1800314, 2018, doi: <a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>.","mla":"Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution.” <i>Physica Status Solidi (b)</i>, no. 256, 1800314, 2018, doi:<a href=\"https://doi.org/10.1002/pssb.201800314\">10.1002/pssb.201800314</a>.","apa":"Esser, N., &#38; Schmidt, W. G. (2018). Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The Surface Dipole Contribution. <i>Physica Status Solidi (b)</i>, <i>256</i>, Article 1800314. <a href=\"https://doi.org/10.1002/pssb.201800314\">https://doi.org/10.1002/pssb.201800314</a>"},"type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"27"},{"_id":"230"},{"_id":"429"}],"date_created":"2020-05-29T09:48:41Z"},{"publication":"physica status solidi (b)","issue":"8","abstract":[{"lang":"eng","text":"<jats:title>Abstract</jats:title><jats:p>Two slightly different, efficient tight‐binding (TB) models for the description of the electronic properties of nitride‐based semiconductor quantum dots (QDs) have been developed and applied to the calculation of the electronic one‐particle spectrum of these structures. Using these one‐particle QD‐states, dipole and Coulomb matrix elements can be calculated, from which the optical properties of these systems can be obtained. These TB calculations have been performed for nitride‐based QDs with a cubic zincblende structure and those with a wurtzite crystal structure. In this paper, we discuss the general methodology used and the results obtained for the electronic one‐particle states and energies, for the dipole and Coulomb matrix elements, and for the excitonic optical emission and absorption spectra.</jats:p>"}],"date_created":"2025-12-05T15:08:01Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"297"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","author":[{"last_name":"Schulz","first_name":"S.","full_name":"Schulz, S."},{"last_name":"Mourad","first_name":"D.","full_name":"Mourad, D."},{"id":"27271","full_name":"Schumacher, Stefan","orcid":"0000-0003-4042-4951","first_name":"Stefan","last_name":"Schumacher"},{"last_name":"Czycholl","first_name":"G.","full_name":"Czycholl, G."}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"year":"2011","title":"Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots","intvolume":"       248","date_updated":"2025-12-05T15:08:40Z","publication_status":"published","language":[{"iso":"eng"}],"doi":"10.1002/pssb.201147158","citation":{"chicago":"Schulz, S., D. Mourad, Stefan Schumacher, and G. Czycholl. “Tight‐binding Model for the Electronic and Optical Properties of Nitride‐based Quantum Dots.” <i>Physica Status Solidi (b)</i> 248, no. 8 (2011): 1853–66. <a href=\"https://doi.org/10.1002/pssb.201147158\">https://doi.org/10.1002/pssb.201147158</a>.","short":"S. Schulz, D. Mourad, S. Schumacher, G. Czycholl, Physica Status Solidi (b) 248 (2011) 1853–1866.","ieee":"S. Schulz, D. Mourad, S. Schumacher, and G. Czycholl, “Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots,” <i>physica status solidi (b)</i>, vol. 248, no. 8, pp. 1853–1866, 2011, doi: <a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>.","apa":"Schulz, S., Mourad, D., Schumacher, S., &#38; Czycholl, G. (2011). Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots. <i>Physica Status Solidi (b)</i>, <i>248</i>(8), 1853–1866. <a href=\"https://doi.org/10.1002/pssb.201147158\">https://doi.org/10.1002/pssb.201147158</a>","bibtex":"@article{Schulz_Mourad_Schumacher_Czycholl_2011, title={Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots}, volume={248}, DOI={<a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>}, number={8}, journal={physica status solidi (b)}, publisher={Wiley}, author={Schulz, S. and Mourad, D. and Schumacher, Stefan and Czycholl, G.}, year={2011}, pages={1853–1866} }","ama":"Schulz S, Mourad D, Schumacher S, Czycholl G. Tight‐binding model for the electronic and optical properties of nitride‐based quantum dots. <i>physica status solidi (b)</i>. 2011;248(8):1853-1866. doi:<a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>","mla":"Schulz, S., et al. “Tight‐binding Model for the Electronic and Optical Properties of Nitride‐based Quantum Dots.” <i>Physica Status Solidi (b)</i>, vol. 248, no. 8, Wiley, 2011, pp. 1853–66, doi:<a href=\"https://doi.org/10.1002/pssb.201147158\">10.1002/pssb.201147158</a>."},"status":"public","_id":"62929","publisher":"Wiley","page":"1853-1866","volume":248,"user_id":"16199"},{"department":[{"_id":"15"}],"type":"journal_article","date_created":"2018-08-28T12:42:58Z","file":[{"date_created":"2018-08-28T12:43:31Z","creator":"hclaudia","content_type":"application/pdf","success":1,"file_id":"4211","date_updated":"2018-08-28T12:43:31Z","relation":"main_file","file_size":911931,"access_level":"closed","file_name":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer.pdf"}],"abstract":[{"text":"In this paper we demonstrate a strain-driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter-layer in order to achieve crack-free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10^9 cm^2. The structural properties of the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.","lang":"eng"}],"issue":"7","publication":"physica status solidi (b)","doi":"10.1002/pssb.200983537","language":[{"iso":"eng"}],"intvolume":"       247","article_type":"original","date_updated":"2022-01-06T07:00:36Z","publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Häberlen, Maik","first_name":"Maik","last_name":"Häberlen"},{"full_name":"Zhu, Dandan","last_name":"Zhu","first_name":"Dandan"},{"last_name":"McAleese","first_name":"Clifford","full_name":"McAleese, Clifford"},{"last_name":"Zhu","first_name":"Tongtong","full_name":"Zhu, Tongtong"},{"first_name":"Menno J.","last_name":"Kappers","full_name":"Kappers, Menno J."},{"full_name":"Humphreys, Colin J.","first_name":"Colin J.","last_name":"Humphreys"}],"title":"Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer","year":"2010","citation":{"chicago":"Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247, no. 7 (2010): 1753–56. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>.","short":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica Status Solidi (B) 247 (2010) 1753–1756.","apa":"Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys, C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756. <a href=\"https://doi.org/10.1002/pssb.200983537\">https://doi.org/10.1002/pssb.200983537</a>","ieee":"M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys, “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.","ama":"Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>","bibtex":"@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>}, number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen, Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }","mla":"Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247, no. 7, Wiley, 2010, pp. 1753–56, doi:<a href=\"https://doi.org/10.1002/pssb.200983537\">10.1002/pssb.200983537</a>."},"file_date_updated":"2018-08-28T12:43:31Z","volume":247,"ddc":["530"],"user_id":"55706","_id":"4210","publisher":"Wiley","page":"1753-1756","has_accepted_license":"1","status":"public"},{"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"284"},{"_id":"790"},{"_id":"35"},{"_id":"230"}],"type":"journal_article","date_created":"2019-10-15T07:40:58Z","publication":"physica status solidi (b)","issue":"7","doi":"10.1002/pssb.200983582","language":[{"iso":"eng"}],"intvolume":"       247","date_updated":"2025-12-16T07:46:59Z","publication_status":"published","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Scholle, A.","last_name":"Scholle","first_name":"A."},{"full_name":"Greulich-Weber, S.","last_name":"Greulich-Weber","first_name":"S."},{"full_name":"As, Donat Josef","first_name":"Donat Josef","last_name":"As","orcid":"0000-0003-1121-3565","id":"14"},{"full_name":"Mietze, Ch.","first_name":"Ch.","last_name":"Mietze"},{"full_name":"Son, N. T.","last_name":"Son","first_name":"N. T."},{"full_name":"Hemmingsson, C.","first_name":"C.","last_name":"Hemmingsson"},{"last_name":"Monemar","first_name":"B.","full_name":"Monemar, B."},{"last_name":"Janzén","first_name":"E.","full_name":"Janzén, E."},{"id":"171","last_name":"Gerstmann","first_name":"Uwe","orcid":"0000-0002-4476-223X","full_name":"Gerstmann, Uwe"},{"last_name":"Sanna","first_name":"S.","full_name":"Sanna, S."},{"full_name":"Rauls, E.","first_name":"E.","last_name":"Rauls"},{"id":"468","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero"}],"title":"Magnetic characterization of conductance electrons in GaN","year":"2010","citation":{"apa":"Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson, C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., &#38; Schmidt, W. G. (2010). Magnetic characterization of conductance electrons in GaN. <i>Physica Status Solidi (b)</i>, <i>247</i>(7), 1728–1731. <a href=\"https://doi.org/10.1002/pssb.200983582\">https://doi.org/10.1002/pssb.200983582</a>","ieee":"A. Scholle <i>et al.</i>, “Magnetic characterization of conductance electrons in GaN,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1728–1731, 2010, doi: <a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>.","chicago":"Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son, C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons in GaN.” <i>Physica Status Solidi (b)</i> 247, no. 7 (2010): 1728–31. <a href=\"https://doi.org/10.1002/pssb.200983582\">https://doi.org/10.1002/pssb.200983582</a>.","short":"A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson, B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica Status Solidi (b) 247 (2010) 1728–1731.","mla":"Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in GaN.” <i>Physica Status Solidi (b)</i>, vol. 247, no. 7, 2010, pp. 1728–31, doi:<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>.","ama":"Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance electrons in GaN. <i>physica status solidi (b)</i>. 2010;247(7):1728-1731. doi:<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>","bibtex":"@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983582\">10.1002/pssb.200983582</a>}, number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber, S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010}, pages={1728–1731} }"},"volume":247,"user_id":"16199","funded_apc":"1","_id":"13835","page":"1728-1731","status":"public"},{"date_created":"2019-10-15T07:35:55Z","type":"journal_article","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"publication":"physica status solidi (b)","issue":"8","citation":{"mla":"Speiser, E., et al. “Metal-Insulator Transition in Si(111)-(4 × 1)/(8 × 2)-In Studied by Optical Spectroscopy.” <i>Physica Status Solidi (b)</i>, vol. 247, no. 8, 2010, pp. 2033–39, doi:<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>.","ama":"Speiser E, Chandola S, Hinrichs K, et al. Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy. <i>physica status solidi (b)</i>. 2010;247(8):2033-2039. doi:<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>","bibtex":"@article{Speiser_Chandola_Hinrichs_Gensch_Cobet_Wippermann_Schmidt_Bechstedt_Richter_Fleischer_et al._2010, title={Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy}, volume={247}, DOI={<a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>}, number={8}, journal={physica status solidi (b)}, author={Speiser, E. and Chandola, S. and Hinrichs, K. and Gensch, M. and Cobet, C. and Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Richter, W. and Fleischer, K. and et al.}, year={2010}, pages={2033–2039} }","apa":"Speiser, E., Chandola, S., Hinrichs, K., Gensch, M., Cobet, C., Wippermann, S., Schmidt, W. G., Bechstedt, F., Richter, W., Fleischer, K., McGilp, J. F., &#38; Esser, N. (2010). Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy. <i>Physica Status Solidi (b)</i>, <i>247</i>(8), 2033–2039. <a href=\"https://doi.org/10.1002/pssb.200983961\">https://doi.org/10.1002/pssb.200983961</a>","ieee":"E. Speiser <i>et al.</i>, “Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy,” <i>physica status solidi (b)</i>, vol. 247, no. 8, pp. 2033–2039, 2010, doi: <a href=\"https://doi.org/10.1002/pssb.200983961\">10.1002/pssb.200983961</a>.","chicago":"Speiser, E., S. Chandola, K. Hinrichs, M. Gensch, C. Cobet, S. Wippermann, Wolf Gero Schmidt, et al. “Metal-Insulator Transition in Si(111)-(4 × 1)/(8 × 2)-In Studied by Optical Spectroscopy.” <i>Physica Status Solidi (b)</i> 247, no. 8 (2010): 2033–39. <a href=\"https://doi.org/10.1002/pssb.200983961\">https://doi.org/10.1002/pssb.200983961</a>.","short":"E. Speiser, S. Chandola, K. Hinrichs, M. Gensch, C. Cobet, S. Wippermann, W.G. Schmidt, F. Bechstedt, W. Richter, K. Fleischer, J.F. McGilp, N. Esser, Physica Status Solidi (b) 247 (2010) 2033–2039."},"page":"2033-2039","_id":"13831","language":[{"iso":"eng"}],"user_id":"16199","doi":"10.1002/pssb.200983961","volume":247,"year":"2010","status":"public","title":"Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical spectroscopy","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"full_name":"Speiser, E.","last_name":"Speiser","first_name":"E."},{"full_name":"Chandola, S.","first_name":"S.","last_name":"Chandola"},{"last_name":"Hinrichs","first_name":"K.","full_name":"Hinrichs, K."},{"full_name":"Gensch, M.","first_name":"M.","last_name":"Gensch"},{"full_name":"Cobet, C.","last_name":"Cobet","first_name":"C."},{"full_name":"Wippermann, S.","first_name":"S.","last_name":"Wippermann"},{"id":"468","last_name":"Schmidt","first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."},{"first_name":"W.","last_name":"Richter","full_name":"Richter, W."},{"first_name":"K.","last_name":"Fleischer","full_name":"Fleischer, K."},{"first_name":"J. F.","last_name":"McGilp","full_name":"McGilp, J. F."},{"full_name":"Esser, N.","first_name":"N.","last_name":"Esser"}],"publication_status":"published","date_updated":"2025-12-16T07:48:40Z","intvolume":"       247"},{"publication":"physica status solidi (b)","citation":{"ama":"Diaconescu D, Goldschmidt A, Reuter D, Wieck AD. Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. <i>physica status solidi (b)</i>. 2008:276-283. doi:<a href=\"https://doi.org/10.1002/pssb.200743345\">10.1002/pssb.200743345</a>","bibtex":"@article{Diaconescu_Goldschmidt_Reuter_Wieck_2008, title={Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}, DOI={<a href=\"https://doi.org/10.1002/pssb.200743345\">10.1002/pssb.200743345</a>}, journal={physica status solidi (b)}, author={Diaconescu, D. and Goldschmidt, A. and Reuter, Dirk and Wieck, A. D.}, year={2008}, pages={276–283} }","mla":"Diaconescu, D., et al. “Quantum Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” <i>Physica Status Solidi (B)</i>, 2008, pp. 276–83, doi:<a href=\"https://doi.org/10.1002/pssb.200743345\">10.1002/pssb.200743345</a>.","short":"D. Diaconescu, A. Goldschmidt, D. Reuter, A.D. Wieck, Physica Status Solidi (B) (2008) 276–283.","chicago":"Diaconescu, D., A. Goldschmidt, Dirk Reuter, and A. D. Wieck. “Quantum Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” <i>Physica Status Solidi (B)</i>, 2008, 276–83. <a href=\"https://doi.org/10.1002/pssb.200743345\">https://doi.org/10.1002/pssb.200743345</a>.","apa":"Diaconescu, D., Goldschmidt, A., Reuter, D., &#38; Wieck, A. D. (2008). Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. <i>Physica Status Solidi (B)</i>, 276–283. <a href=\"https://doi.org/10.1002/pssb.200743345\">https://doi.org/10.1002/pssb.200743345</a>","ieee":"D. Diaconescu, A. Goldschmidt, D. Reuter, and A. D. Wieck, “Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples,” <i>physica status solidi (b)</i>, pp. 276–283, 2008."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-26T09:09:51Z","publication_status":"published","date_updated":"2022-01-06T07:03:57Z","year":"2008","status":"public","title":"Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples","author":[{"full_name":"Diaconescu, D.","last_name":"Diaconescu","first_name":"D."},{"last_name":"Goldschmidt","first_name":"A.","full_name":"Goldschmidt, A."},{"full_name":"Reuter, Dirk","first_name":"Dirk","last_name":"Reuter","id":"37763"},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"user_id":"42514","doi":"10.1002/pssb.200743345","page":"276-283","language":[{"iso":"eng"}],"_id":"8593"},{"issue":"10","publication":"physica status solidi (b)","citation":{"chicago":"Nau, D., A. Schönhardt, C. Bauer, A. Christ, Thomas Zentgraf, J. Kuhl, and H. Giessen. “Disorder Issues in Metallic Photonic Crystals.” <i>Physica Status Solidi (B)</i> 243, no. 10 (2006): 2331–43. <a href=\"https://doi.org/10.1002/pssb.200668054\">https://doi.org/10.1002/pssb.200668054</a>.","short":"D. Nau, A. Schönhardt, C. Bauer, A. Christ, T. Zentgraf, J. Kuhl, H. Giessen, Physica Status Solidi (B) 243 (2006) 2331–2343.","ieee":"D. Nau <i>et al.</i>, “Disorder issues in metallic photonic crystals,” <i>physica status solidi (b)</i>, vol. 243, no. 10, pp. 2331–2343, 2006.","apa":"Nau, D., Schönhardt, A., Bauer, C., Christ, A., Zentgraf, T., Kuhl, J., &#38; Giessen, H. (2006). Disorder issues in metallic photonic crystals. <i>Physica Status Solidi (B)</i>, <i>243</i>(10), 2331–2343. <a href=\"https://doi.org/10.1002/pssb.200668054\">https://doi.org/10.1002/pssb.200668054</a>","bibtex":"@article{Nau_Schönhardt_Bauer_Christ_Zentgraf_Kuhl_Giessen_2006, title={Disorder issues in metallic photonic crystals}, volume={243}, DOI={<a href=\"https://doi.org/10.1002/pssb.200668054\">10.1002/pssb.200668054</a>}, number={10}, journal={physica status solidi (b)}, publisher={Wiley-Blackwell}, author={Nau, D. and Schönhardt, A. and Bauer, C. and Christ, A. and Zentgraf, Thomas and Kuhl, J. and Giessen, H.}, year={2006}, pages={2331–2343} }","ama":"Nau D, Schönhardt A, Bauer C, et al. Disorder issues in metallic photonic crystals. <i>physica status solidi (b)</i>. 2006;243(10):2331-2343. doi:<a href=\"https://doi.org/10.1002/pssb.200668054\">10.1002/pssb.200668054</a>","mla":"Nau, D., et al. “Disorder Issues in Metallic Photonic Crystals.” <i>Physica Status Solidi (B)</i>, vol. 243, no. 10, Wiley-Blackwell, 2006, pp. 2331–43, doi:<a href=\"https://doi.org/10.1002/pssb.200668054\">10.1002/pssb.200668054</a>."},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2018-03-23T13:01:20Z","date_updated":"2022-01-06T06:53:14Z","publication_status":"published","intvolume":"       243","title":"Disorder issues in metallic photonic crystals","status":"public","year":"2006","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"first_name":"D.","last_name":"Nau","full_name":"Nau, D."},{"last_name":"Schönhardt","first_name":"A.","full_name":"Schönhardt, A."},{"first_name":"C.","last_name":"Bauer","full_name":"Bauer, C."},{"first_name":"A.","last_name":"Christ","full_name":"Christ, A."},{"id":"30525","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","first_name":"Thomas","full_name":"Zentgraf, Thomas"},{"full_name":"Kuhl, J.","last_name":"Kuhl","first_name":"J."},{"last_name":"Giessen","first_name":"H.","full_name":"Giessen, H."}],"doi":"10.1002/pssb.200668054","user_id":"30525","volume":243,"page":"2331-2343","_id":"1752","publisher":"Wiley-Blackwell"},{"publisher":"Wiley-Blackwell","_id":"1753","page":"2344-2348","volume":243,"doi":"10.1002/pssb.200668055","user_id":"30525","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"last_name":"Christ","first_name":"A.","full_name":"Christ, A."},{"full_name":"Zentgraf, Thomas","first_name":"Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","id":"30525"},{"full_name":"Tikhodeev, S. G.","first_name":"S. G.","last_name":"Tikhodeev"},{"full_name":"Gippius, N. A.","first_name":"N. A.","last_name":"Gippius"},{"full_name":"Martin, O. J. F.","last_name":"Martin","first_name":"O. J. F."},{"full_name":"Kuhl, J.","last_name":"Kuhl","first_name":"J."},{"full_name":"Giessen, H.","last_name":"Giessen","first_name":"H."}],"title":"Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal","status":"public","year":"2006","intvolume":"       243","date_updated":"2022-01-06T06:53:14Z","publication_status":"published","date_created":"2018-03-23T13:02:32Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"mla":"Christ, A., et al. “Interaction between Localized and Delocalized Surface Plasmon Polariton Modes in a Metallic Photonic Crystal.” <i>Physica Status Solidi (B)</i>, vol. 243, no. 10, Wiley-Blackwell, 2006, pp. 2344–48, doi:<a href=\"https://doi.org/10.1002/pssb.200668055\">10.1002/pssb.200668055</a>.","bibtex":"@article{Christ_Zentgraf_Tikhodeev_Gippius_Martin_Kuhl_Giessen_2006, title={Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal}, volume={243}, DOI={<a href=\"https://doi.org/10.1002/pssb.200668055\">10.1002/pssb.200668055</a>}, number={10}, journal={physica status solidi (b)}, publisher={Wiley-Blackwell}, author={Christ, A. and Zentgraf, Thomas and Tikhodeev, S. G. and Gippius, N. A. and Martin, O. J. F. and Kuhl, J. and Giessen, H.}, year={2006}, pages={2344–2348} }","ama":"Christ A, Zentgraf T, Tikhodeev SG, et al. Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal. <i>physica status solidi (b)</i>. 2006;243(10):2344-2348. doi:<a href=\"https://doi.org/10.1002/pssb.200668055\">10.1002/pssb.200668055</a>","ieee":"A. Christ <i>et al.</i>, “Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal,” <i>physica status solidi (b)</i>, vol. 243, no. 10, pp. 2344–2348, 2006.","apa":"Christ, A., Zentgraf, T., Tikhodeev, S. G., Gippius, N. A., Martin, O. J. F., Kuhl, J., &#38; Giessen, H. (2006). Interaction between localized and delocalized surface plasmon polariton modes in a metallic photonic crystal. <i>Physica Status Solidi (B)</i>, <i>243</i>(10), 2344–2348. <a href=\"https://doi.org/10.1002/pssb.200668055\">https://doi.org/10.1002/pssb.200668055</a>","chicago":"Christ, A., Thomas Zentgraf, S. G. Tikhodeev, N. A. Gippius, O. J. F. Martin, J. Kuhl, and H. Giessen. “Interaction between Localized and Delocalized Surface Plasmon Polariton Modes in a Metallic Photonic Crystal.” <i>Physica Status Solidi (B)</i> 243, no. 10 (2006): 2344–48. <a href=\"https://doi.org/10.1002/pssb.200668055\">https://doi.org/10.1002/pssb.200668055</a>.","short":"A. Christ, T. Zentgraf, S.G. Tikhodeev, N.A. Gippius, O.J.F. Martin, J. Kuhl, H. Giessen, Physica Status Solidi (B) 243 (2006) 2344–2348."},"publication":"physica status solidi (b)","issue":"10"},{"_id":"8668","language":[{"iso":"eng"}],"page":"3942-3945","doi":"10.1002/pssb.200671520","user_id":"42514","publication_identifier":{"issn":["0370-1972","1521-3951"]},"author":[{"last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763"},{"last_name":"Kailuweit","first_name":"P.","full_name":"Kailuweit, P."},{"last_name":"Roescu","first_name":"R.","full_name":"Roescu, R."},{"last_name":"Wieck","first_name":"A. D.","full_name":"Wieck, A. D."},{"full_name":"Wibbelhoff, O. S.","first_name":"O. S.","last_name":"Wibbelhoff"},{"full_name":"Lorke, A.","first_name":"A.","last_name":"Lorke"},{"full_name":"Zeitler, U.","first_name":"U.","last_name":"Zeitler"},{"full_name":"Maan, J. C.","last_name":"Maan","first_name":"J. C."}],"year":"2006","status":"public","title":"Hole and electron wave functions in self-assembled InAs quantum dots: a comparison","date_updated":"2022-01-06T07:03:58Z","publication_status":"published","date_created":"2019-03-27T09:08:09Z","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","citation":{"apa":"Reuter, D., Kailuweit, P., Roescu, R., Wieck, A. D., Wibbelhoff, O. S., Lorke, A., … Maan, J. C. (2006). Hole and electron wave functions in self-assembled InAs quantum dots: a comparison. <i>Physica Status Solidi (B)</i>, 3942–3945. <a href=\"https://doi.org/10.1002/pssb.200671520\">https://doi.org/10.1002/pssb.200671520</a>","ieee":"D. Reuter <i>et al.</i>, “Hole and electron wave functions in self-assembled InAs quantum dots: a comparison,” <i>physica status solidi (b)</i>, pp. 3942–3945, 2006.","short":"D. Reuter, P. Kailuweit, R. Roescu, A.D. Wieck, O.S. Wibbelhoff, A. Lorke, U. Zeitler, J.C. Maan, Physica Status Solidi (B) (2006) 3942–3945.","chicago":"Reuter, Dirk, P. Kailuweit, R. Roescu, A. D. Wieck, O. S. Wibbelhoff, A. Lorke, U. Zeitler, and J. C. Maan. “Hole and Electron Wave Functions in Self-Assembled InAs Quantum Dots: A Comparison.” <i>Physica Status Solidi (B)</i>, 2006, 3942–45. <a href=\"https://doi.org/10.1002/pssb.200671520\">https://doi.org/10.1002/pssb.200671520</a>.","mla":"Reuter, Dirk, et al. “Hole and Electron Wave Functions in Self-Assembled InAs Quantum Dots: A Comparison.” <i>Physica Status Solidi (B)</i>, 2006, pp. 3942–45, doi:<a href=\"https://doi.org/10.1002/pssb.200671520\">10.1002/pssb.200671520</a>.","ama":"Reuter D, Kailuweit P, Roescu R, et al. Hole and electron wave functions in self-assembled InAs quantum dots: a comparison. <i>physica status solidi (b)</i>. 2006:3942-3945. doi:<a href=\"https://doi.org/10.1002/pssb.200671520\">10.1002/pssb.200671520</a>","bibtex":"@article{Reuter_Kailuweit_Roescu_Wieck_Wibbelhoff_Lorke_Zeitler_Maan_2006, title={Hole and electron wave functions in self-assembled InAs quantum dots: a comparison}, DOI={<a href=\"https://doi.org/10.1002/pssb.200671520\">10.1002/pssb.200671520</a>}, journal={physica status solidi (b)}, author={Reuter, Dirk and Kailuweit, P. and Roescu, R. and Wieck, A. D. and Wibbelhoff, O. S. and Lorke, A. and Zeitler, U. and Maan, J. C.}, year={2006}, pages={3942–3945} }"},"publication":"physica status solidi (b)"},{"doi":"10.1002/pssb.200671529","user_id":"42514","page":"3922-3927","_id":"8669","language":[{"iso":"eng"}],"date_updated":"2022-01-06T07:03:58Z","publication_status":"published","year":"2006","status":"public","title":"Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei","author":[{"first_name":"R.","last_name":"Oulton","full_name":"Oulton, R."},{"full_name":"Verbin, S. Yu.","last_name":"Verbin","first_name":"S. Yu."},{"first_name":"T.","last_name":"Auer","full_name":"Auer, T."},{"last_name":"Cherbunin","first_name":"R. V.","full_name":"Cherbunin, R. V."},{"last_name":"Greilich","first_name":"A.","full_name":"Greilich, A."},{"full_name":"Yakovlev, D. R.","first_name":"D. R.","last_name":"Yakovlev"},{"full_name":"Bayer, M.","first_name":"M.","last_name":"Bayer"},{"id":"37763","last_name":"Reuter","first_name":"Dirk","full_name":"Reuter, Dirk"},{"full_name":"Wieck, A.","last_name":"Wieck","first_name":"A."}],"publication_identifier":{"issn":["0370-1972","1521-3951"]},"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"date_created":"2019-03-27T09:12:55Z","publication":"physica status solidi (b)","citation":{"short":"R. Oulton, S.Y. Verbin, T. Auer, R.V. Cherbunin, A. Greilich, D.R. Yakovlev, M. Bayer, D. Reuter, A. Wieck, Physica Status Solidi (B) (2006) 3922–3927.","chicago":"Oulton, R., S. Yu. Verbin, T. Auer, R. V. Cherbunin, A. Greilich, D. R. Yakovlev, M. Bayer, Dirk Reuter, and A. Wieck. “Sub-Second Electron Spin Lifetimes in Quantum Dots at Zero Applied Magnetic Field Due to Alignment of QD Nuclei.” <i>Physica Status Solidi (B)</i>, 2006, 3922–27. <a href=\"https://doi.org/10.1002/pssb.200671529\">https://doi.org/10.1002/pssb.200671529</a>.","ieee":"R. Oulton <i>et al.</i>, “Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei,” <i>physica status solidi (b)</i>, pp. 3922–3927, 2006.","apa":"Oulton, R., Verbin, S. Y., Auer, T., Cherbunin, R. V., Greilich, A., Yakovlev, D. R., … Wieck, A. (2006). Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei. <i>Physica Status Solidi (B)</i>, 3922–3927. <a href=\"https://doi.org/10.1002/pssb.200671529\">https://doi.org/10.1002/pssb.200671529</a>","bibtex":"@article{Oulton_Verbin_Auer_Cherbunin_Greilich_Yakovlev_Bayer_Reuter_Wieck_2006, title={Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei}, DOI={<a href=\"https://doi.org/10.1002/pssb.200671529\">10.1002/pssb.200671529</a>}, journal={physica status solidi (b)}, author={Oulton, R. and Verbin, S. Yu. and Auer, T. and Cherbunin, R. V. and Greilich, A. and Yakovlev, D. R. and Bayer, M. and Reuter, Dirk and Wieck, A.}, year={2006}, pages={3922–3927} }","ama":"Oulton R, Verbin SY, Auer T, et al. Sub-second electron spin lifetimes in quantum dots at zero applied magnetic field due to alignment of QD nuclei. <i>physica status solidi (b)</i>. 2006:3922-3927. doi:<a href=\"https://doi.org/10.1002/pssb.200671529\">10.1002/pssb.200671529</a>","mla":"Oulton, R., et al. “Sub-Second Electron Spin Lifetimes in Quantum Dots at Zero Applied Magnetic Field Due to Alignment of QD Nuclei.” <i>Physica Status Solidi (B)</i>, 2006, pp. 3922–27, doi:<a href=\"https://doi.org/10.1002/pssb.200671529\">10.1002/pssb.200671529</a>."}}]