---
_id: '65741'
abstract:
- lang: eng
  text: "<jats:p>\r\n                    This work investigates the temperature dependence
    of the lattice constant\r\n                    <jats:italic>a</jats:italic>\r\n
    \                   <jats:sub>exp</jats:sub>\r\n                    of cubic GaN/3C‐SiC/Si
    (001) epilayers grown at 740°C by plasma‐assisted molecular beam epitaxy is investigated.
    High resolution X‐ray diffraction is performed to determine the lattice constant,
    using an Anton–Paar DHS1100 stage to vary the sample temperature from 25°C to
    900°C, calibrated against the underlying single‐crystalline silicon substrate.
    A linear increase in\r\n                    <jats:italic>a</jats:italic>\r\n                    <jats:sub>exp</jats:sub>\r\n
    \                   with rising temperature is observed. The thermal expansion
    behaviour is modelled using Debye´s phonon dispersion. The fitted lattice parameters
    are used to calculate the thermal expansion coefficient (TEC). At room temperature
    the TEC is determined to be\r\n                    <jats:italic>α</jats:italic>\r\n
    \                   <jats:sub>Debye </jats:sub>\r\n                    ≈ 5.25
    × 10\r\n                    <jats:sup>−6</jats:sup>\r\n                     K\r\n
    \                   <jats:sup>−1</jats:sup>\r\n                    . We further
    compare the TEC of the cubic GaN epilayer to that of free‐standing hexagonal GaN
    using the crystallographic relationship of , demonstrating good agreement between
    both phases. Using literature values for the elastic constants of cubic GaN, the
    corresponding elastic moduli and Debye temperature Θ\r\n                    <jats:sub>D</jats:sub>\r\n
    \                   are calculated. An average value of Θ\r\n                    <jats:sub>D</jats:sub>\r\n
    \                   of ≈905 ± 25 K is obtained, which is very close to our experimental
    results. Moreover, tensile strain is found to be present in our sample at room
    temperature, leading to an increase in the TEC. The impact of strain on the thermal
    properties of cubic GaN is discussed.\r\n                  </jats:p>"
article_number: e202500477
article_type: original
author:
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
- first_name: Falco
  full_name: Meier, Falco
  last_name: Meier
- first_name: Pascal
  full_name: Mahler, Pascal
  last_name: Mahler
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
citation:
  ama: As DJ, Meier F, Mahler P, Meier C. X‐Ray Investigation of the Thermal Expansion
    Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates. <i>physica
    status solidi (b)</i>. 2026;263(2). doi:<a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>
  apa: As, D. J., Meier, F., Mahler, P., &#38; Meier, C. (2026). X‐Ray Investigation
    of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si
    (001) Substrates. <i>Physica Status Solidi (b)</i>, <i>263</i>(2), Article e202500477.
    <a href="https://doi.org/10.1002/pssb.202500477">https://doi.org/10.1002/pssb.202500477</a>
  bibtex: '@article{As_Meier_Mahler_Meier_2026, title={X‐Ray Investigation of the
    Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001)
    Substrates}, volume={263}, DOI={<a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>},
    number={2e202500477}, journal={physica status solidi (b)}, publisher={Wiley},
    author={As, Donat Josef and Meier, Falco and Mahler, Pascal and Meier, Cedrik},
    year={2026} }'
  chicago: As, Donat Josef, Falco Meier, Pascal Mahler, and Cedrik Meier. “X‐Ray Investigation
    of the Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si
    (001) Substrates.” <i>Physica Status Solidi (b)</i> 263, no. 2 (2026). <a href="https://doi.org/10.1002/pssb.202500477">https://doi.org/10.1002/pssb.202500477</a>.
  ieee: 'D. J. As, F. Meier, P. Mahler, and C. Meier, “X‐Ray Investigation of the
    Thermal Expansion Coefficient of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001)
    Substrates,” <i>physica status solidi (b)</i>, vol. 263, no. 2, Art. no. e202500477,
    2026, doi: <a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>.'
  mla: As, Donat Josef, et al. “X‐Ray Investigation of the Thermal Expansion Coefficient
    of Cubic Gallium Nitride on 3C‐SiC (001)/Si (001) Substrates.” <i>Physica Status
    Solidi (b)</i>, vol. 263, no. 2, e202500477, Wiley, 2026, doi:<a href="https://doi.org/10.1002/pssb.202500477">10.1002/pssb.202500477</a>.
  short: D.J. As, F. Meier, P. Mahler, C. Meier, Physica Status Solidi (b) 263 (2026).
date_created: 2026-06-01T09:22:04Z
date_updated: 2026-06-01T09:23:41Z
department:
- _id: '15'
doi: 10.1002/pssb.202500477
intvolume: '       263'
issue: '2'
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: X‐Ray Investigation of the Thermal Expansion Coefficient of Cubic Gallium Nitride
  on 3C‐SiC (001)/Si (001) Substrates
type: journal_article
user_id: '20798'
volume: 263
year: '2026'
...
---
_id: '46132'
author:
- first_name: Mario
  full_name: Littmann, Mario
  last_name: Littmann
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Littmann M, Reuter D, As DJ. Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
    3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy. <i>physica status
    solidi (b)</i>. 2023;260(7). doi:<a href="https://doi.org/10.1002/pssb.202300034">10.1002/pssb.202300034</a>
  apa: Littmann, M., Reuter, D., &#38; As, D. J. (2023). Remote Epitaxy of Cubic Gallium
    Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
    Epitaxy. <i>Physica Status Solidi (b)</i>, <i>260</i>(7). <a href="https://doi.org/10.1002/pssb.202300034">https://doi.org/10.1002/pssb.202300034</a>
  bibtex: '@article{Littmann_Reuter_As_2023, title={Remote Epitaxy of Cubic Gallium
    Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam
    Epitaxy}, volume={260}, DOI={<a href="https://doi.org/10.1002/pssb.202300034">10.1002/pssb.202300034</a>},
    number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Littmann,
    Mario and Reuter, Dirk and As, Donat Josef}, year={2023} }'
  chicago: Littmann, Mario, Dirk Reuter, and Donat Josef As. “Remote Epitaxy of Cubic
    Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular
    Beam Epitaxy.” <i>Physica Status Solidi (b)</i> 260, no. 7 (2023). <a href="https://doi.org/10.1002/pssb.202300034">https://doi.org/10.1002/pssb.202300034</a>.
  ieee: 'M. Littmann, D. Reuter, and D. J. As, “Remote Epitaxy of Cubic Gallium Nitride
    on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy,”
    <i>physica status solidi (b)</i>, vol. 260, no. 7, 2023, doi: <a href="https://doi.org/10.1002/pssb.202300034">10.1002/pssb.202300034</a>.'
  mla: Littmann, Mario, et al. “Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered
    3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy.” <i>Physica Status
    Solidi (b)</i>, vol. 260, no. 7, Wiley, 2023, doi:<a href="https://doi.org/10.1002/pssb.202300034">10.1002/pssb.202300034</a>.
  short: M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
date_created: 2023-07-25T08:06:13Z
date_updated: 2023-07-25T08:07:20Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.202300034
intvolume: '       260'
issue: '7'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates
  by Plasma‐Assisted Molecular Beam Epitaxy
type: journal_article
user_id: '42514'
volume: 260
year: '2023'
...
---
_id: '35232'
article_number: '2200508'
author:
- first_name: Falco
  full_name: Meier, Falco
  last_name: Meier
- first_name: Mario
  full_name: Littmann, Mario
  last_name: Littmann
- first_name: Julius
  full_name: Bürger, Julius
  id: '46952'
  last_name: Bürger
- first_name: Thomas
  full_name: Riedl, Thomas
  id: '36950'
  last_name: Riedl
- first_name: Daniel
  full_name: Kool, Daniel
  id: '44586'
  last_name: Kool
- first_name: Jörg
  full_name: Lindner, Jörg
  id: '20797'
  last_name: Lindner
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Meier F, Littmann M, Bürger J, et al. Selective Area Growth of Cubic Gallium
    Nitride in Nanoscopic Silicon Dioxide Masks. <i>physica status solidi (b)</i>.
    Published online 2022. doi:<a href="https://doi.org/10.1002/pssb.202200508">10.1002/pssb.202200508</a>
  apa: Meier, F., Littmann, M., Bürger, J., Riedl, T., Kool, D., Lindner, J., Reuter,
    D., &#38; As, D. J. (2022). Selective Area Growth of Cubic Gallium Nitride in
    Nanoscopic Silicon Dioxide Masks. <i>Physica Status Solidi (b)</i>, Article 2200508.
    <a href="https://doi.org/10.1002/pssb.202200508">https://doi.org/10.1002/pssb.202200508</a>
  bibtex: '@article{Meier_Littmann_Bürger_Riedl_Kool_Lindner_Reuter_As_2022, title={Selective
    Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks}, DOI={<a
    href="https://doi.org/10.1002/pssb.202200508">10.1002/pssb.202200508</a>}, number={2200508},
    journal={physica status solidi (b)}, publisher={Wiley}, author={Meier, Falco and
    Littmann, Mario and Bürger, Julius and Riedl, Thomas and Kool, Daniel and Lindner,
    Jörg and Reuter, Dirk and As, Donat Josef}, year={2022} }'
  chicago: Meier, Falco, Mario Littmann, Julius Bürger, Thomas Riedl, Daniel Kool,
    Jörg Lindner, Dirk Reuter, and Donat Josef As. “Selective Area Growth of Cubic
    Gallium Nitride in Nanoscopic Silicon Dioxide Masks.” <i>Physica Status Solidi
    (b)</i>, 2022. <a href="https://doi.org/10.1002/pssb.202200508">https://doi.org/10.1002/pssb.202200508</a>.
  ieee: 'F. Meier <i>et al.</i>, “Selective Area Growth of Cubic Gallium Nitride in
    Nanoscopic Silicon Dioxide Masks,” <i>physica status solidi (b)</i>, Art. no.
    2200508, 2022, doi: <a href="https://doi.org/10.1002/pssb.202200508">10.1002/pssb.202200508</a>.'
  mla: Meier, Falco, et al. “Selective Area Growth of Cubic Gallium Nitride in Nanoscopic
    Silicon Dioxide Masks.” <i>Physica Status Solidi (b)</i>, 2200508, Wiley, 2022,
    doi:<a href="https://doi.org/10.1002/pssb.202200508">10.1002/pssb.202200508</a>.
  short: F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter,
    D.J. As, Physica Status Solidi (b) (2022).
date_created: 2023-01-04T14:51:51Z
date_updated: 2023-01-04T14:53:24Z
department:
- _id: '15'
doi: 10.1002/pssb.202200508
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide
  Masks
type: journal_article
user_id: '77496'
year: '2022'
...
---
_id: '54849'
abstract:
- lang: eng
  text: <jats:sec><jats:label /><jats:p>The third‐order susceptibility  of lithium
    niobate (LiNbO<jats:sub>3</jats:sub>) is calculated within a Berry‐phase formulation
    of the dynamical polarization based on the electronic structure obtained within
    density‐functional theory (DFT). Maximum  values of the order of  m V are calculated
    for photon energies between 1.2 and 2 eV, i.e., in the lower half of the optical
    bandgap of lithium niobate. Both free and bound electron (bi)polarons are found
    to lead to a remarkable enhancement of the third‐order susceptibility for photon
    energies below 1 eV.</jats:p></jats:sec>
author:
- first_name: Agnieszka L.
  full_name: Kozub, Agnieszka L.
  last_name: Kozub
- first_name: Uwe
  full_name: Gerstmann, Uwe
  id: '171'
  last_name: Gerstmann
  orcid: 0000-0002-4476-223X
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: 'Kozub AL, Gerstmann U, Schmidt WG. Third‐Order Susceptibility of Lithium Niobate:
    Influence of Polarons and Bipolarons. <i>physica status solidi (b)</i>. 2022;260(2).
    doi:<a href="https://doi.org/10.1002/pssb.202200453">10.1002/pssb.202200453</a>'
  apa: 'Kozub, A. L., Gerstmann, U., &#38; Schmidt, W. G. (2022). Third‐Order Susceptibility
    of Lithium Niobate: Influence of Polarons and Bipolarons. <i>Physica Status Solidi
    (b)</i>, <i>260</i>(2). <a href="https://doi.org/10.1002/pssb.202200453">https://doi.org/10.1002/pssb.202200453</a>'
  bibtex: '@article{Kozub_Gerstmann_Schmidt_2022, title={Third‐Order Susceptibility
    of Lithium Niobate: Influence of Polarons and Bipolarons}, volume={260}, DOI={<a
    href="https://doi.org/10.1002/pssb.202200453">10.1002/pssb.202200453</a>}, number={2},
    journal={physica status solidi (b)}, publisher={Wiley}, author={Kozub, Agnieszka
    L. and Gerstmann, Uwe and Schmidt, Wolf Gero}, year={2022} }'
  chicago: 'Kozub, Agnieszka L., Uwe Gerstmann, and Wolf Gero Schmidt. “Third‐Order
    Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons.” <i>Physica
    Status Solidi (b)</i> 260, no. 2 (2022). <a href="https://doi.org/10.1002/pssb.202200453">https://doi.org/10.1002/pssb.202200453</a>.'
  ieee: 'A. L. Kozub, U. Gerstmann, and W. G. Schmidt, “Third‐Order Susceptibility
    of Lithium Niobate: Influence of Polarons and Bipolarons,” <i>physica status solidi
    (b)</i>, vol. 260, no. 2, 2022, doi: <a href="https://doi.org/10.1002/pssb.202200453">10.1002/pssb.202200453</a>.'
  mla: 'Kozub, Agnieszka L., et al. “Third‐Order Susceptibility of Lithium Niobate:
    Influence of Polarons and Bipolarons.” <i>Physica Status Solidi (b)</i>, vol.
    260, no. 2, Wiley, 2022, doi:<a href="https://doi.org/10.1002/pssb.202200453">10.1002/pssb.202200453</a>.'
  short: A.L. Kozub, U. Gerstmann, W.G. Schmidt, Physica Status Solidi (b) 260 (2022).
date_created: 2024-06-24T05:59:11Z
date_updated: 2024-06-24T06:02:58Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '790'
- _id: '230'
- _id: '429'
- _id: '27'
doi: 10.1002/pssb.202200453
intvolume: '       260'
issue: '2'
language:
- iso: eng
project:
- _id: '53'
  grant_number: '231447078'
  name: 'TRR 142: TRR 142 - Maßgeschneiderte nichtlineare Photonik: Von grundlegenden
    Konzepten zu funktionellen Strukturen'
- _id: '55'
  name: 'TRR 142 - B: TRR 142 - Project Area B'
- _id: '52'
  name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: 'Third‐Order Susceptibility of Lithium Niobate: Influence of Polarons and Bipolarons'
type: journal_article
user_id: '16199'
volume: 260
year: '2022'
...
---
_id: '37656'
article_number: '2200308'
author:
- first_name: Luis Joel
  full_name: Glahn, Luis Joel
  last_name: Glahn
- first_name: Isaac Azahel
  full_name: Ruiz Alvarado, Isaac Azahel
  id: '79462'
  last_name: Ruiz Alvarado
  orcid: 0000-0002-4710-1170
- first_name: Sergej
  full_name: Neufeld, Sergej
  last_name: Neufeld
- first_name: Mohammad Amin
  full_name: Zare Pour, Mohammad Amin
  last_name: Zare Pour
- first_name: Agnieszka
  full_name: Paszuk, Agnieszka
  last_name: Paszuk
- first_name: David
  full_name: Ostheimer, David
  last_name: Ostheimer
- first_name: Sahar
  full_name: Shekarabi, Sahar
  last_name: Shekarabi
- first_name: Oleksandr
  full_name: Romanyuk, Oleksandr
  last_name: Romanyuk
- first_name: Dominik Christian
  full_name: Moritz, Dominik Christian
  last_name: Moritz
- first_name: Jan Philipp
  full_name: Hofmann, Jan Philipp
  last_name: Hofmann
- first_name: Wolfram
  full_name: Jaegermann, Wolfram
  last_name: Jaegermann
- first_name: Thomas
  full_name: Hannappel, Thomas
  last_name: Hannappel
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: 'Glahn LJ, Ruiz Alvarado IA, Neufeld S, et al. Clean and Hydrogen‐Adsorbed
    AlInP(001) Surfaces: Structures and Electronic Properties. <i>physica status solidi
    (b)</i>. 2022;259(11). doi:<a href="https://doi.org/10.1002/pssb.202200308">10.1002/pssb.202200308</a>'
  apa: 'Glahn, L. J., Ruiz Alvarado, I. A., Neufeld, S., Zare Pour, M. A., Paszuk,
    A., Ostheimer, D., Shekarabi, S., Romanyuk, O., Moritz, D. C., Hofmann, J. P.,
    Jaegermann, W., Hannappel, T., &#38; Schmidt, W. G. (2022). Clean and Hydrogen‐Adsorbed
    AlInP(001) Surfaces: Structures and Electronic Properties. <i>Physica Status Solidi
    (b)</i>, <i>259</i>(11), Article 2200308. <a href="https://doi.org/10.1002/pssb.202200308">https://doi.org/10.1002/pssb.202200308</a>'
  bibtex: '@article{Glahn_Ruiz Alvarado_Neufeld_Zare Pour_Paszuk_Ostheimer_Shekarabi_Romanyuk_Moritz_Hofmann_et
    al._2022, title={Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and
    Electronic Properties}, volume={259}, DOI={<a href="https://doi.org/10.1002/pssb.202200308">10.1002/pssb.202200308</a>},
    number={112200308}, journal={physica status solidi (b)}, publisher={Wiley}, author={Glahn,
    Luis Joel and Ruiz Alvarado, Isaac Azahel and Neufeld, Sergej and Zare Pour, Mohammad
    Amin and Paszuk, Agnieszka and Ostheimer, David and Shekarabi, Sahar and Romanyuk,
    Oleksandr and Moritz, Dominik Christian and Hofmann, Jan Philipp and et al.},
    year={2022} }'
  chicago: 'Glahn, Luis Joel, Isaac Azahel Ruiz Alvarado, Sergej Neufeld, Mohammad
    Amin Zare Pour, Agnieszka Paszuk, David Ostheimer, Sahar Shekarabi, et al. “Clean
    and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties.”
    <i>Physica Status Solidi (b)</i> 259, no. 11 (2022). <a href="https://doi.org/10.1002/pssb.202200308">https://doi.org/10.1002/pssb.202200308</a>.'
  ieee: 'L. J. Glahn <i>et al.</i>, “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces:
    Structures and Electronic Properties,” <i>physica status solidi (b)</i>, vol.
    259, no. 11, Art. no. 2200308, 2022, doi: <a href="https://doi.org/10.1002/pssb.202200308">10.1002/pssb.202200308</a>.'
  mla: 'Glahn, Luis Joel, et al. “Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces:
    Structures and Electronic Properties.” <i>Physica Status Solidi (b)</i>, vol.
    259, no. 11, 2200308, Wiley, 2022, doi:<a href="https://doi.org/10.1002/pssb.202200308">10.1002/pssb.202200308</a>.'
  short: L.J. Glahn, I.A. Ruiz Alvarado, S. Neufeld, M.A. Zare Pour, A. Paszuk, D.
    Ostheimer, S. Shekarabi, O. Romanyuk, D.C. Moritz, J.P. Hofmann, W. Jaegermann,
    T. Hannappel, W.G. Schmidt, Physica Status Solidi (b) 259 (2022).
date_created: 2023-01-20T09:19:43Z
date_updated: 2023-04-20T13:59:01Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.202200308
intvolume: '       259'
issue: '11'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
project:
- _id: '52'
  name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: 'Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic
  Properties'
type: journal_article
user_id: '16199'
volume: 259
year: '2022'
...
---
_id: '40244'
article_number: '2100462'
author:
- first_name: Lukas
  full_name: Meier, Lukas
  last_name: Meier
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: Meier L, Schmidt WG. GaInP/AlInP(001) Interfaces from Density Functional Theory.
    <i>physica status solidi (b)</i>. 2021;259(1). doi:<a href="https://doi.org/10.1002/pssb.202100462">10.1002/pssb.202100462</a>
  apa: Meier, L., &#38; Schmidt, W. G. (2021). GaInP/AlInP(001) Interfaces from Density
    Functional Theory. <i>Physica Status Solidi (b)</i>, <i>259</i>(1), Article 2100462.
    <a href="https://doi.org/10.1002/pssb.202100462">https://doi.org/10.1002/pssb.202100462</a>
  bibtex: '@article{Meier_Schmidt_2021, title={GaInP/AlInP(001) Interfaces from Density
    Functional Theory}, volume={259}, DOI={<a href="https://doi.org/10.1002/pssb.202100462">10.1002/pssb.202100462</a>},
    number={12100462}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier,
    Lukas and Schmidt, Wolf Gero}, year={2021} }'
  chicago: Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from
    Density Functional Theory.” <i>Physica Status Solidi (b)</i> 259, no. 1 (2021).
    <a href="https://doi.org/10.1002/pssb.202100462">https://doi.org/10.1002/pssb.202100462</a>.
  ieee: 'L. Meier and W. G. Schmidt, “GaInP/AlInP(001) Interfaces from Density Functional
    Theory,” <i>physica status solidi (b)</i>, vol. 259, no. 1, Art. no. 2100462,
    2021, doi: <a href="https://doi.org/10.1002/pssb.202100462">10.1002/pssb.202100462</a>.'
  mla: Meier, Lukas, and Wolf Gero Schmidt. “GaInP/AlInP(001) Interfaces from Density
    Functional Theory.” <i>Physica Status Solidi (b)</i>, vol. 259, no. 1, 2100462,
    Wiley, 2021, doi:<a href="https://doi.org/10.1002/pssb.202100462">10.1002/pssb.202100462</a>.
  short: L. Meier, W.G. Schmidt, Physica Status Solidi (b) 259 (2021).
date_created: 2023-01-26T09:41:51Z
date_updated: 2023-04-20T14:28:22Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.202100462
intvolume: '       259'
issue: '1'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
project:
- _id: '52'
  name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: GaInP/AlInP(001) Interfaces from Density Functional Theory
type: journal_article
user_id: '16199'
volume: 259
year: '2021'
...
---
_id: '23840'
article_number: '1900522'
author:
- first_name: Elias
  full_name: Baron, Elias
  last_name: Baron
- first_name: Rüdiger
  full_name: Goldhahn, Rüdiger
  last_name: Goldhahn
- first_name: Michael
  full_name: Deppe, Michael
  last_name: Deppe
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
- first_name: Martin
  full_name: Feneberg, Martin
  last_name: Feneberg
citation:
  ama: Baron E, Goldhahn R, Deppe M, As DJ, Feneberg M. Photoluminescence Line‐Shape
    Analysis of Highly n‐Type Doped Zincblende GaN. <i>physica status solidi (b)</i>.
    2020. doi:<a href="https://doi.org/10.1002/pssb.201900522">10.1002/pssb.201900522</a>
  apa: Baron, E., Goldhahn, R., Deppe, M., As, D. J., &#38; Feneberg, M. (2020). Photoluminescence
    Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN. <i>Physica Status Solidi
    (B)</i>. <a href="https://doi.org/10.1002/pssb.201900522">https://doi.org/10.1002/pssb.201900522</a>
  bibtex: '@article{Baron_Goldhahn_Deppe_As_Feneberg_2020, title={Photoluminescence
    Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN}, DOI={<a href="https://doi.org/10.1002/pssb.201900522">10.1002/pssb.201900522</a>},
    number={1900522}, journal={physica status solidi (b)}, author={Baron, Elias and
    Goldhahn, Rüdiger and Deppe, Michael and As, Donat Josef and Feneberg, Martin},
    year={2020} }'
  chicago: Baron, Elias, Rüdiger Goldhahn, Michael Deppe, Donat Josef As, and Martin
    Feneberg. “Photoluminescence Line‐Shape Analysis of Highly N‐Type Doped Zincblende
    GaN.” <i>Physica Status Solidi (B)</i>, 2020. <a href="https://doi.org/10.1002/pssb.201900522">https://doi.org/10.1002/pssb.201900522</a>.
  ieee: E. Baron, R. Goldhahn, M. Deppe, D. J. As, and M. Feneberg, “Photoluminescence
    Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN,” <i>physica status
    solidi (b)</i>, 2020.
  mla: Baron, Elias, et al. “Photoluminescence Line‐Shape Analysis of Highly N‐Type
    Doped Zincblende GaN.” <i>Physica Status Solidi (B)</i>, 1900522, 2020, doi:<a
    href="https://doi.org/10.1002/pssb.201900522">10.1002/pssb.201900522</a>.
  short: E. Baron, R. Goldhahn, M. Deppe, D.J. As, M. Feneberg, Physica Status Solidi
    (B) (2020).
date_created: 2021-09-07T09:17:31Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900522
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '23841'
article_number: '1900532'
author:
- first_name: Michael
  full_name: Deppe, Michael
  last_name: Deppe
- first_name: Tobias
  full_name: Henksmeier, Tobias
  last_name: Henksmeier
- first_name: Jürgen W.
  full_name: Gerlach, Jürgen W.
  last_name: Gerlach
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
    Growth and Characterization of Germanium‐Doped Cubic Al                       
      x                        Ga            1−                          x       
                    N. <i>physica status solidi (b)</i>. 2020. doi:<a href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>
  apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2020).
    Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al 
                            x                        Ga            1−             
                x                        N. <i>Physica Status Solidi (B)</i>. <a href="https://doi.org/10.1002/pssb.201900532">https://doi.org/10.1002/pssb.201900532</a>
  bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2020, title={Molecular Beam
    Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al               
              x                        Ga            1−                          x 
                          N}, DOI={<a href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>},
    number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
    and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat Josef},
    year={2020} }'
  chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
    Donat Josef As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
    Cubic Al                          x                        Ga            1−   
                          x                        N.” <i>Physica Status Solidi (B)</i>,
    2020. <a href="https://doi.org/10.1002/pssb.201900532">https://doi.org/10.1002/pssb.201900532</a>.
  ieee: M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
    Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al         
                    x                        Ga            1−                     
        x                        N,” <i>physica status solidi (b)</i>, 2020.
  mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
    of Germanium‐Doped Cubic Al                          x                       
    Ga            1−                          x                        N.” <i>Physica
    Status Solidi (B)</i>, 1900532, 2020, doi:<a href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>.
  short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
    Solidi (B) (2020).
date_created: 2021-09-07T09:18:26Z
date_updated: 2022-01-06T06:56:01Z
department:
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201900532
language:
- iso: eng
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
  Al                          x                        Ga            1−                          x                        N
type: journal_article
user_id: '14'
year: '2020'
...
---
_id: '40233'
article_number: '2000463'
author:
- first_name: Lukas
  full_name: Meier, Lukas
  last_name: Meier
- first_name: Christian
  full_name: Braun, Christian
  last_name: Braun
- first_name: Thomas
  full_name: Hannappel, Thomas
  last_name: Hannappel
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: Meier L, Braun C, Hannappel T, Schmidt WG. Band Alignment at Ga           
    <sub>              <i>x</i>            </sub>            In            <sub> 
                1–              <i>x</i>            </sub>            P/Al       
        <sub>              <i>y</i>            </sub>            In            <sub> 
                1–              <i>y</i>            </sub>            P Alloy Interfaces
    from Hybrid Density Functional Theory Calculations. <i>physica status solidi (b)</i>.
    2020;258(2). doi:<a href="https://doi.org/10.1002/pssb.202000463">10.1002/pssb.202000463</a>
  apa: Meier, L., Braun, C., Hannappel, T., &#38; Schmidt, W. G. (2020). Band Alignment
    at Ga            <sub>              <i>x</i>            </sub>            In 
              <sub>              1–              <i>x</i>            </sub>       
        P/Al            <sub>              <i>y</i>            </sub>            In 
              <sub>              1–              <i>y</i>            </sub>       
        P Alloy Interfaces from Hybrid Density Functional Theory Calculations. <i>Physica
    Status Solidi (b)</i>, <i>258</i>(2), Article 2000463. <a href="https://doi.org/10.1002/pssb.202000463">https://doi.org/10.1002/pssb.202000463</a>
  bibtex: '@article{Meier_Braun_Hannappel_Schmidt_2020, title={Band Alignment at Ga 
              <sub>              <i>x</i>            </sub>            In         
      <sub>              1–              <i>x</i>            </sub>            P/Al 
              <sub>              <i>y</i>            </sub>            In         
      <sub>              1–              <i>y</i>            </sub>            P Alloy
    Interfaces from Hybrid Density Functional Theory Calculations}, volume={258},
    DOI={<a href="https://doi.org/10.1002/pssb.202000463">10.1002/pssb.202000463</a>},
    number={22000463}, journal={physica status solidi (b)}, publisher={Wiley}, author={Meier,
    Lukas and Braun, Christian and Hannappel, Thomas and Schmidt, Wolf Gero}, year={2020}
    }'
  chicago: Meier, Lukas, Christian Braun, Thomas Hannappel, and Wolf Gero Schmidt.
    “Band Alignment at Ga            <sub>              <i>x</i>            </sub> 
              In            <sub>              1–              <i>x</i>           
    </sub>            P/Al            <sub>              <i>y</i>            </sub> 
              In            <sub>              1–              <i>y</i>           
    </sub>            P Alloy Interfaces from Hybrid Density Functional Theory Calculations.”
    <i>Physica Status Solidi (b)</i> 258, no. 2 (2020). <a href="https://doi.org/10.1002/pssb.202000463">https://doi.org/10.1002/pssb.202000463</a>.
  ieee: 'L. Meier, C. Braun, T. Hannappel, and W. G. Schmidt, “Band Alignment at Ga 
              <sub>              <i>x</i>            </sub>            In         
      <sub>              1–              <i>x</i>            </sub>            P/Al 
              <sub>              <i>y</i>            </sub>            In         
      <sub>              1–              <i>y</i>            </sub>            P Alloy
    Interfaces from Hybrid Density Functional Theory Calculations,” <i>physica status
    solidi (b)</i>, vol. 258, no. 2, Art. no. 2000463, 2020, doi: <a href="https://doi.org/10.1002/pssb.202000463">10.1002/pssb.202000463</a>.'
  mla: Meier, Lukas, et al. “Band Alignment at Ga            <sub>              <i>x</i> 
              </sub>            In            <sub>              1–              <i>x</i> 
              </sub>            P/Al            <sub>              <i>y</i>       
        </sub>            In            <sub>              1–              <i>y</i> 
              </sub>            P Alloy Interfaces from Hybrid Density Functional
    Theory Calculations.” <i>Physica Status Solidi (b)</i>, vol. 258, no. 2, 2000463,
    Wiley, 2020, doi:<a href="https://doi.org/10.1002/pssb.202000463">10.1002/pssb.202000463</a>.
  short: L. Meier, C. Braun, T. Hannappel, W.G. Schmidt, Physica Status Solidi (b)
    258 (2020).
date_created: 2023-01-26T09:33:46Z
date_updated: 2023-04-20T14:18:36Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1002/pssb.202000463
intvolume: '       258'
issue: '2'
keyword:
- Condensed Matter Physics
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
project:
- _id: '52'
  name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Band Alignment at Ga            <sub>              <i>x</i>            </sub>            In            <sub>              1–              <i>x</i>            </sub>            P/Al            <sub>              <i>y</i>            </sub>            In            <sub>              1–              <i>y</i>            </sub>            P
  Alloy Interfaces from Hybrid Density Functional Theory Calculations
type: journal_article
user_id: '16199'
volume: 258
year: '2020'
...
---
_id: '15444'
article_number: '1900532'
author:
- first_name: Michael
  full_name: Deppe, Michael
  last_name: Deppe
- first_name: Tobias
  full_name: Henksmeier, Tobias
  last_name: Henksmeier
- first_name: Jürgen W.
  full_name: Gerlach, Jürgen W.
  last_name: Gerlach
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: Donat J.
  full_name: As, Donat J.
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
citation:
  ama: Deppe M, Henksmeier T, Gerlach JW, Reuter D, As DJ. Molecular Beam Epitaxy
    Growth and Characterization of Germanium‐Doped Cubic Al                       
      x                        Ga            1−                          x       
                    N. <i>physica status solidi (b)</i>. Published online 2019. doi:<a
    href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>
  apa: Deppe, M., Henksmeier, T., Gerlach, J. W., Reuter, D., &#38; As, D. J. (2019).
    Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al 
                            x                        Ga            1−             
                x                        N. <i>Physica Status Solidi (b)</i>, Article
    1900532. <a href="https://doi.org/10.1002/pssb.201900532">https://doi.org/10.1002/pssb.201900532</a>
  bibtex: '@article{Deppe_Henksmeier_Gerlach_Reuter_As_2019, title={Molecular Beam
    Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al               
              x                        Ga            1−                          x 
                          N}, DOI={<a href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>},
    number={1900532}, journal={physica status solidi (b)}, author={Deppe, Michael
    and Henksmeier, Tobias and Gerlach, Jürgen W. and Reuter, Dirk and As, Donat J.},
    year={2019} }'
  chicago: Deppe, Michael, Tobias Henksmeier, Jürgen W. Gerlach, Dirk Reuter, and
    Donat J. As. “Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped
    Cubic Al                          x                        Ga            1−   
                          x                        N.” <i>Physica Status Solidi (b)</i>,
    2019. <a href="https://doi.org/10.1002/pssb.201900532">https://doi.org/10.1002/pssb.201900532</a>.
  ieee: 'M. Deppe, T. Henksmeier, J. W. Gerlach, D. Reuter, and D. J. As, “Molecular
    Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic Al         
                    x                        Ga            1−                     
        x                        N,” <i>physica status solidi (b)</i>, Art. no. 1900532,
    2019, doi: <a href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>.'
  mla: Deppe, Michael, et al. “Molecular Beam Epitaxy Growth and Characterization
    of Germanium‐Doped Cubic Al                          x                       
    Ga            1−                          x                        N.” <i>Physica
    Status Solidi (b)</i>, 1900532, 2019, doi:<a href="https://doi.org/10.1002/pssb.201900532">10.1002/pssb.201900532</a>.
  short: M. Deppe, T. Henksmeier, J.W. Gerlach, D. Reuter, D.J. As, Physica Status
    Solidi (b) (2019).
date_created: 2020-01-07T10:09:27Z
date_updated: 2023-10-09T09:03:47Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.201900532
language:
- iso: eng
main_file_link:
- open_access: '1'
oa: '1'
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Molecular Beam Epitaxy Growth and Characterization of Germanium‐Doped Cubic
  Al                          x                        Ga            1−                          x                        N
type: journal_article
user_id: '14931'
year: '2019'
...
---
_id: '17065'
article_number: '1800314'
author:
- first_name: Norbert
  full_name: Esser, Norbert
  last_name: Esser
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: 'Esser N, Schmidt WG. Electric Field Induced Raman Scattering at the Sb–InP(110)
    Interface: The Surface Dipole Contribution. <i>physica status solidi (b)</i>.
    2018;(256). doi:<a href="https://doi.org/10.1002/pssb.201800314">10.1002/pssb.201800314</a>'
  apa: 'Esser, N., &#38; Schmidt, W. G. (2018). Electric Field Induced Raman Scattering
    at the Sb–InP(110) Interface: The Surface Dipole Contribution. <i>Physica Status
    Solidi (b)</i>, <i>256</i>, Article 1800314. <a href="https://doi.org/10.1002/pssb.201800314">https://doi.org/10.1002/pssb.201800314</a>'
  bibtex: '@article{Esser_Schmidt_2018, title={Electric Field Induced Raman Scattering
    at the Sb–InP(110) Interface: The Surface Dipole Contribution}, DOI={<a href="https://doi.org/10.1002/pssb.201800314">10.1002/pssb.201800314</a>},
    number={2561800314}, journal={physica status solidi (b)}, author={Esser, Norbert
    and Schmidt, Wolf Gero}, year={2018} }'
  chicago: 'Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering
    at the Sb–InP(110) Interface: The Surface Dipole Contribution.” <i>Physica Status
    Solidi (b)</i>, no. 256 (2018). <a href="https://doi.org/10.1002/pssb.201800314">https://doi.org/10.1002/pssb.201800314</a>.'
  ieee: 'N. Esser and W. G. Schmidt, “Electric Field Induced Raman Scattering at the
    Sb–InP(110) Interface: The Surface Dipole Contribution,” <i>physica status solidi
    (b)</i>, no. 256, Art. no. 1800314, 2018, doi: <a href="https://doi.org/10.1002/pssb.201800314">10.1002/pssb.201800314</a>.'
  mla: 'Esser, Norbert, and Wolf Gero Schmidt. “Electric Field Induced Raman Scattering
    at the Sb–InP(110) Interface: The Surface Dipole Contribution.” <i>Physica Status
    Solidi (b)</i>, no. 256, 1800314, 2018, doi:<a href="https://doi.org/10.1002/pssb.201800314">10.1002/pssb.201800314</a>.'
  short: N. Esser, W.G. Schmidt, Physica Status Solidi (b) (2018).
date_created: 2020-05-29T09:48:41Z
date_updated: 2025-12-16T11:30:05Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '27'
- _id: '230'
- _id: '429'
doi: 10.1002/pssb.201800314
issue: '256'
language:
- iso: eng
project:
- _id: '52'
  name: Computing Resources Provided by the Paderborn Center for Parallel Computing
- _id: '52'
  name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
- _id: '53'
  name: 'TRR 142: TRR 142'
- _id: '55'
  name: 'TRR 142 - B: TRR 142 - Project Area B'
- _id: '69'
  name: 'TRR 142 - B4: TRR 142 - Subproject B4'
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: 'Electric Field Induced Raman Scattering at the Sb–InP(110) Interface: The
  Surface Dipole Contribution'
type: journal_article
user_id: '16199'
year: '2018'
...
---
_id: '62929'
abstract:
- lang: eng
  text: <jats:title>Abstract</jats:title><jats:p>Two slightly different, efficient
    tight‐binding (TB) models for the description of the electronic properties of
    nitride‐based semiconductor quantum dots (QDs) have been developed and applied
    to the calculation of the electronic one‐particle spectrum of these structures.
    Using these one‐particle QD‐states, dipole and Coulomb matrix elements can be
    calculated, from which the optical properties of these systems can be obtained.
    These TB calculations have been performed for nitride‐based QDs with a cubic zincblende
    structure and those with a wurtzite crystal structure. In this paper, we discuss
    the general methodology used and the results obtained for the electronic one‐particle
    states and energies, for the dipole and Coulomb matrix elements, and for the excitonic
    optical emission and absorption spectra.</jats:p>
author:
- first_name: S.
  full_name: Schulz, S.
  last_name: Schulz
- first_name: D.
  full_name: Mourad, D.
  last_name: Mourad
- first_name: Stefan
  full_name: Schumacher, Stefan
  id: '27271'
  last_name: Schumacher
  orcid: 0000-0003-4042-4951
- first_name: G.
  full_name: Czycholl, G.
  last_name: Czycholl
citation:
  ama: Schulz S, Mourad D, Schumacher S, Czycholl G. Tight‐binding model for the electronic
    and optical properties of nitride‐based quantum dots. <i>physica status solidi
    (b)</i>. 2011;248(8):1853-1866. doi:<a href="https://doi.org/10.1002/pssb.201147158">10.1002/pssb.201147158</a>
  apa: Schulz, S., Mourad, D., Schumacher, S., &#38; Czycholl, G. (2011). Tight‐binding
    model for the electronic and optical properties of nitride‐based quantum dots.
    <i>Physica Status Solidi (b)</i>, <i>248</i>(8), 1853–1866. <a href="https://doi.org/10.1002/pssb.201147158">https://doi.org/10.1002/pssb.201147158</a>
  bibtex: '@article{Schulz_Mourad_Schumacher_Czycholl_2011, title={Tight‐binding model
    for the electronic and optical properties of nitride‐based quantum dots}, volume={248},
    DOI={<a href="https://doi.org/10.1002/pssb.201147158">10.1002/pssb.201147158</a>},
    number={8}, journal={physica status solidi (b)}, publisher={Wiley}, author={Schulz,
    S. and Mourad, D. and Schumacher, Stefan and Czycholl, G.}, year={2011}, pages={1853–1866}
    }'
  chicago: 'Schulz, S., D. Mourad, Stefan Schumacher, and G. Czycholl. “Tight‐binding
    Model for the Electronic and Optical Properties of Nitride‐based Quantum Dots.”
    <i>Physica Status Solidi (b)</i> 248, no. 8 (2011): 1853–66. <a href="https://doi.org/10.1002/pssb.201147158">https://doi.org/10.1002/pssb.201147158</a>.'
  ieee: 'S. Schulz, D. Mourad, S. Schumacher, and G. Czycholl, “Tight‐binding model
    for the electronic and optical properties of nitride‐based quantum dots,” <i>physica
    status solidi (b)</i>, vol. 248, no. 8, pp. 1853–1866, 2011, doi: <a href="https://doi.org/10.1002/pssb.201147158">10.1002/pssb.201147158</a>.'
  mla: Schulz, S., et al. “Tight‐binding Model for the Electronic and Optical Properties
    of Nitride‐based Quantum Dots.” <i>Physica Status Solidi (b)</i>, vol. 248, no.
    8, Wiley, 2011, pp. 1853–66, doi:<a href="https://doi.org/10.1002/pssb.201147158">10.1002/pssb.201147158</a>.
  short: S. Schulz, D. Mourad, S. Schumacher, G. Czycholl, Physica Status Solidi (b)
    248 (2011) 1853–1866.
date_created: 2025-12-05T15:08:01Z
date_updated: 2025-12-05T15:08:40Z
department:
- _id: '15'
- _id: '170'
- _id: '297'
- _id: '35'
- _id: '230'
doi: 10.1002/pssb.201147158
intvolume: '       248'
issue: '8'
language:
- iso: eng
page: 1853-1866
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Tight‐binding model for the electronic and optical properties of nitride‐based
  quantum dots
type: journal_article
user_id: '16199'
volume: 248
year: '2011'
...
---
_id: '4210'
abstract:
- lang: eng
  text: "In this paper we demonstrate a strain-driven GaN interlayer method to reduce
    dislocation densities in GaN grown on (111) oriented silicon by metal organic
    vapour phase epitaxy (MOVPE). In order to achieve crack-free GaN layers of\r\nreasonable
    thicknesses and dislocation densities it is crucial to integrate both dislocation
    reduction and strain management layers. In contrast to techniques like FACELO
    or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation
    layer without the need to deposit a SiO2 or SiNx mask. A graded AlGaN layer for
    strain management can be grown on top of this dislocation reducing 3D GaN inter-layer
    in order to achieve crack-free GaN layers grown on top of the AlGaN strain management
    layer. Furthermore, an additional SiNx layer for subsequent dislocation reduction
    can also be incorporated into the structure and is shown to efficiently reduce
    the dislocation density down to the low 10^9 cm^2. The structural properties of
    the 3D GaN island buffer layer and overgrown\r\nsamples are studied by means of
    SEM, cross-sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed
    to correlate the dislocation microstructure as observed by plan view TEM with
    luminescent properties."
article_type: original
author:
- first_name: Maik
  full_name: Häberlen, Maik
  last_name: Häberlen
- first_name: Dandan
  full_name: Zhu, Dandan
  last_name: Zhu
- first_name: Clifford
  full_name: McAleese, Clifford
  last_name: McAleese
- first_name: Tongtong
  full_name: Zhu, Tongtong
  last_name: Zhu
- first_name: Menno J.
  full_name: Kappers, Menno J.
  last_name: Kappers
- first_name: Colin J.
  full_name: Humphreys, Colin J.
  last_name: Humphreys
citation:
  ama: Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ, Humphreys CJ. Dislocation
    reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer. <i>physica
    status solidi (b)</i>. 2010;247(7):1753-1756. doi:<a href="https://doi.org/10.1002/pssb.200983537">10.1002/pssb.200983537</a>
  apa: Häberlen, M., Zhu, D., McAleese, C., Zhu, T., Kappers, M. J., &#38; Humphreys,
    C. J. (2010). Dislocation reduction in GaN grown on Si(111) using a strain-driven
    3D GaN interlayer. <i>Physica Status Solidi (B)</i>, <i>247</i>(7), 1753–1756.
    <a href="https://doi.org/10.1002/pssb.200983537">https://doi.org/10.1002/pssb.200983537</a>
  bibtex: '@article{Häberlen_Zhu_McAleese_Zhu_Kappers_Humphreys_2010, title={Dislocation
    reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer}, volume={247},
    DOI={<a href="https://doi.org/10.1002/pssb.200983537">10.1002/pssb.200983537</a>},
    number={7}, journal={physica status solidi (b)}, publisher={Wiley}, author={Häberlen,
    Maik and Zhu, Dandan and McAleese, Clifford and Zhu, Tongtong and Kappers, Menno
    J. and Humphreys, Colin J.}, year={2010}, pages={1753–1756} }'
  chicago: 'Häberlen, Maik, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J.
    Kappers, and Colin J. Humphreys. “Dislocation Reduction in GaN Grown on Si(111)
    Using a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i> 247,
    no. 7 (2010): 1753–56. <a href="https://doi.org/10.1002/pssb.200983537">https://doi.org/10.1002/pssb.200983537</a>.'
  ieee: M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M. J. Kappers, and C. J. Humphreys,
    “Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer,”
    <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1753–1756, 2010.
  mla: Häberlen, Maik, et al. “Dislocation Reduction in GaN Grown on Si(111) Using
    a Strain-Driven 3D GaN Interlayer.” <i>Physica Status Solidi (B)</i>, vol. 247,
    no. 7, Wiley, 2010, pp. 1753–56, doi:<a href="https://doi.org/10.1002/pssb.200983537">10.1002/pssb.200983537</a>.
  short: M. Häberlen, D. Zhu, C. McAleese, T. Zhu, M.J. Kappers, C.J. Humphreys, Physica
    Status Solidi (B) 247 (2010) 1753–1756.
date_created: 2018-08-28T12:42:58Z
date_updated: 2022-01-06T07:00:36Z
ddc:
- '530'
department:
- _id: '15'
doi: 10.1002/pssb.200983537
file:
- access_level: closed
  content_type: application/pdf
  creator: hclaudia
  date_created: 2018-08-28T12:43:31Z
  date_updated: 2018-08-28T12:43:31Z
  file_id: '4211'
  file_name: Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D
    GaN interlayer.pdf
  file_size: 911931
  relation: main_file
  success: 1
file_date_updated: 2018-08-28T12:43:31Z
has_accepted_license: '1'
intvolume: '       247'
issue: '7'
language:
- iso: eng
page: 1753-1756
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley
status: public
title: Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN
  interlayer
type: journal_article
user_id: '55706'
volume: 247
year: '2010'
...
---
_id: '13835'
author:
- first_name: A.
  full_name: Scholle, A.
  last_name: Scholle
- first_name: S.
  full_name: Greulich-Weber, S.
  last_name: Greulich-Weber
- first_name: Donat Josef
  full_name: As, Donat Josef
  id: '14'
  last_name: As
  orcid: 0000-0003-1121-3565
- first_name: Ch.
  full_name: Mietze, Ch.
  last_name: Mietze
- first_name: N. T.
  full_name: Son, N. T.
  last_name: Son
- first_name: C.
  full_name: Hemmingsson, C.
  last_name: Hemmingsson
- first_name: B.
  full_name: Monemar, B.
  last_name: Monemar
- first_name: E.
  full_name: Janzén, E.
  last_name: Janzén
- first_name: Uwe
  full_name: Gerstmann, Uwe
  id: '171'
  last_name: Gerstmann
  orcid: 0000-0002-4476-223X
- first_name: S.
  full_name: Sanna, S.
  last_name: Sanna
- first_name: E.
  full_name: Rauls, E.
  last_name: Rauls
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
citation:
  ama: Scholle A, Greulich-Weber S, As DJ, et al. Magnetic characterization of conductance
    electrons in GaN. <i>physica status solidi (b)</i>. 2010;247(7):1728-1731. doi:<a
    href="https://doi.org/10.1002/pssb.200983582">10.1002/pssb.200983582</a>
  apa: Scholle, A., Greulich-Weber, S., As, D. J., Mietze, Ch., Son, N. T., Hemmingsson,
    C., Monemar, B., Janzén, E., Gerstmann, U., Sanna, S., Rauls, E., &#38; Schmidt,
    W. G. (2010). Magnetic characterization of conductance electrons in GaN. <i>Physica
    Status Solidi (b)</i>, <i>247</i>(7), 1728–1731. <a href="https://doi.org/10.1002/pssb.200983582">https://doi.org/10.1002/pssb.200983582</a>
  bibtex: '@article{Scholle_Greulich-Weber_As_Mietze_Son_Hemmingsson_Monemar_Janzén_Gerstmann_Sanna_et
    al._2010, title={Magnetic characterization of conductance electrons in GaN}, volume={247},
    DOI={<a href="https://doi.org/10.1002/pssb.200983582">10.1002/pssb.200983582</a>},
    number={7}, journal={physica status solidi (b)}, author={Scholle, A. and Greulich-Weber,
    S. and As, Donat Josef and Mietze, Ch. and Son, N. T. and Hemmingsson, C. and
    Monemar, B. and Janzén, E. and Gerstmann, Uwe and Sanna, S. and et al.}, year={2010},
    pages={1728–1731} }'
  chicago: 'Scholle, A., S. Greulich-Weber, Donat Josef As, Ch. Mietze, N. T. Son,
    C. Hemmingsson, B. Monemar, et al. “Magnetic Characterization of Conductance Electrons
    in GaN.” <i>Physica Status Solidi (b)</i> 247, no. 7 (2010): 1728–31. <a href="https://doi.org/10.1002/pssb.200983582">https://doi.org/10.1002/pssb.200983582</a>.'
  ieee: 'A. Scholle <i>et al.</i>, “Magnetic characterization of conductance electrons
    in GaN,” <i>physica status solidi (b)</i>, vol. 247, no. 7, pp. 1728–1731, 2010,
    doi: <a href="https://doi.org/10.1002/pssb.200983582">10.1002/pssb.200983582</a>.'
  mla: Scholle, A., et al. “Magnetic Characterization of Conductance Electrons in
    GaN.” <i>Physica Status Solidi (b)</i>, vol. 247, no. 7, 2010, pp. 1728–31, doi:<a
    href="https://doi.org/10.1002/pssb.200983582">10.1002/pssb.200983582</a>.
  short: A. Scholle, S. Greulich-Weber, D.J. As, Ch. Mietze, N.T. Son, C. Hemmingsson,
    B. Monemar, E. Janzén, U. Gerstmann, S. Sanna, E. Rauls, W.G. Schmidt, Physica
    Status Solidi (b) 247 (2010) 1728–1731.
date_created: 2019-10-15T07:40:58Z
date_updated: 2025-12-16T07:46:59Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '284'
- _id: '790'
- _id: '35'
- _id: '230'
doi: 10.1002/pssb.200983582
funded_apc: '1'
intvolume: '       247'
issue: '7'
language:
- iso: eng
page: 1728-1731
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Magnetic characterization of conductance electrons in GaN
type: journal_article
user_id: '16199'
volume: 247
year: '2010'
...
---
_id: '13831'
author:
- first_name: E.
  full_name: Speiser, E.
  last_name: Speiser
- first_name: S.
  full_name: Chandola, S.
  last_name: Chandola
- first_name: K.
  full_name: Hinrichs, K.
  last_name: Hinrichs
- first_name: M.
  full_name: Gensch, M.
  last_name: Gensch
- first_name: C.
  full_name: Cobet, C.
  last_name: Cobet
- first_name: S.
  full_name: Wippermann, S.
  last_name: Wippermann
- first_name: Wolf Gero
  full_name: Schmidt, Wolf Gero
  id: '468'
  last_name: Schmidt
  orcid: 0000-0002-2717-5076
- first_name: F.
  full_name: Bechstedt, F.
  last_name: Bechstedt
- first_name: W.
  full_name: Richter, W.
  last_name: Richter
- first_name: K.
  full_name: Fleischer, K.
  last_name: Fleischer
- first_name: J. F.
  full_name: McGilp, J. F.
  last_name: McGilp
- first_name: N.
  full_name: Esser, N.
  last_name: Esser
citation:
  ama: Speiser E, Chandola S, Hinrichs K, et al. Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In
    studied by optical spectroscopy. <i>physica status solidi (b)</i>. 2010;247(8):2033-2039.
    doi:<a href="https://doi.org/10.1002/pssb.200983961">10.1002/pssb.200983961</a>
  apa: Speiser, E., Chandola, S., Hinrichs, K., Gensch, M., Cobet, C., Wippermann,
    S., Schmidt, W. G., Bechstedt, F., Richter, W., Fleischer, K., McGilp, J. F.,
    &#38; Esser, N. (2010). Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In
    studied by optical spectroscopy. <i>Physica Status Solidi (b)</i>, <i>247</i>(8),
    2033–2039. <a href="https://doi.org/10.1002/pssb.200983961">https://doi.org/10.1002/pssb.200983961</a>
  bibtex: '@article{Speiser_Chandola_Hinrichs_Gensch_Cobet_Wippermann_Schmidt_Bechstedt_Richter_Fleischer_et
    al._2010, title={Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied
    by optical spectroscopy}, volume={247}, DOI={<a href="https://doi.org/10.1002/pssb.200983961">10.1002/pssb.200983961</a>},
    number={8}, journal={physica status solidi (b)}, author={Speiser, E. and Chandola,
    S. and Hinrichs, K. and Gensch, M. and Cobet, C. and Wippermann, S. and Schmidt,
    Wolf Gero and Bechstedt, F. and Richter, W. and Fleischer, K. and et al.}, year={2010},
    pages={2033–2039} }'
  chicago: 'Speiser, E., S. Chandola, K. Hinrichs, M. Gensch, C. Cobet, S. Wippermann,
    Wolf Gero Schmidt, et al. “Metal-Insulator Transition in Si(111)-(4 × 1)/(8 × 2)-In
    Studied by Optical Spectroscopy.” <i>Physica Status Solidi (b)</i> 247, no. 8
    (2010): 2033–39. <a href="https://doi.org/10.1002/pssb.200983961">https://doi.org/10.1002/pssb.200983961</a>.'
  ieee: 'E. Speiser <i>et al.</i>, “Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In
    studied by optical spectroscopy,” <i>physica status solidi (b)</i>, vol. 247,
    no. 8, pp. 2033–2039, 2010, doi: <a href="https://doi.org/10.1002/pssb.200983961">10.1002/pssb.200983961</a>.'
  mla: Speiser, E., et al. “Metal-Insulator Transition in Si(111)-(4 × 1)/(8 × 2)-In
    Studied by Optical Spectroscopy.” <i>Physica Status Solidi (b)</i>, vol. 247,
    no. 8, 2010, pp. 2033–39, doi:<a href="https://doi.org/10.1002/pssb.200983961">10.1002/pssb.200983961</a>.
  short: E. Speiser, S. Chandola, K. Hinrichs, M. Gensch, C. Cobet, S. Wippermann,
    W.G. Schmidt, F. Bechstedt, W. Richter, K. Fleischer, J.F. McGilp, N. Esser, Physica
    Status Solidi (b) 247 (2010) 2033–2039.
date_created: 2019-10-15T07:35:55Z
date_updated: 2025-12-16T07:48:40Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1002/pssb.200983961
intvolume: '       247'
issue: '8'
language:
- iso: eng
page: 2033-2039
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Metal-insulator transition in Si(111)-(4 × 1)/(8 × 2)-In studied by optical
  spectroscopy
type: journal_article
user_id: '16199'
volume: 247
year: '2010'
...
---
_id: '8593'
author:
- first_name: D.
  full_name: Diaconescu, D.
  last_name: Diaconescu
- first_name: A.
  full_name: Goldschmidt, A.
  last_name: Goldschmidt
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
citation:
  ama: Diaconescu D, Goldschmidt A, Reuter D, Wieck AD. Quantum Hall effect in long
    and in mobility adjusted GaAs/AlxGa1-xAs samples. <i>physica status solidi (b)</i>.
    2008:276-283. doi:<a href="https://doi.org/10.1002/pssb.200743345">10.1002/pssb.200743345</a>
  apa: Diaconescu, D., Goldschmidt, A., Reuter, D., &#38; Wieck, A. D. (2008). Quantum
    Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples. <i>Physica
    Status Solidi (B)</i>, 276–283. <a href="https://doi.org/10.1002/pssb.200743345">https://doi.org/10.1002/pssb.200743345</a>
  bibtex: '@article{Diaconescu_Goldschmidt_Reuter_Wieck_2008, title={Quantum Hall
    effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples}, DOI={<a href="https://doi.org/10.1002/pssb.200743345">10.1002/pssb.200743345</a>},
    journal={physica status solidi (b)}, author={Diaconescu, D. and Goldschmidt, A.
    and Reuter, Dirk and Wieck, A. D.}, year={2008}, pages={276–283} }'
  chicago: Diaconescu, D., A. Goldschmidt, Dirk Reuter, and A. D. Wieck. “Quantum
    Hall Effect in Long and in Mobility Adjusted GaAs/AlxGa1-XAs Samples.” <i>Physica
    Status Solidi (B)</i>, 2008, 276–83. <a href="https://doi.org/10.1002/pssb.200743345">https://doi.org/10.1002/pssb.200743345</a>.
  ieee: D. Diaconescu, A. Goldschmidt, D. Reuter, and A. D. Wieck, “Quantum Hall effect
    in long and in mobility adjusted GaAs/AlxGa1-xAs samples,” <i>physica status solidi
    (b)</i>, pp. 276–283, 2008.
  mla: Diaconescu, D., et al. “Quantum Hall Effect in Long and in Mobility Adjusted
    GaAs/AlxGa1-XAs Samples.” <i>Physica Status Solidi (B)</i>, 2008, pp. 276–83,
    doi:<a href="https://doi.org/10.1002/pssb.200743345">10.1002/pssb.200743345</a>.
  short: D. Diaconescu, A. Goldschmidt, D. Reuter, A.D. Wieck, Physica Status Solidi
    (B) (2008) 276–283.
date_created: 2019-03-26T09:09:51Z
date_updated: 2022-01-06T07:03:57Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.200743345
language:
- iso: eng
page: 276-283
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples
type: journal_article
user_id: '42514'
year: '2008'
...
---
_id: '1752'
author:
- first_name: D.
  full_name: Nau, D.
  last_name: Nau
- first_name: A.
  full_name: Schönhardt, A.
  last_name: Schönhardt
- first_name: C.
  full_name: Bauer, C.
  last_name: Bauer
- first_name: A.
  full_name: Christ, A.
  last_name: Christ
- first_name: Thomas
  full_name: Zentgraf, Thomas
  id: '30525'
  last_name: Zentgraf
  orcid: 0000-0002-8662-1101
- first_name: J.
  full_name: Kuhl, J.
  last_name: Kuhl
- first_name: H.
  full_name: Giessen, H.
  last_name: Giessen
citation:
  ama: Nau D, Schönhardt A, Bauer C, et al. Disorder issues in metallic photonic crystals.
    <i>physica status solidi (b)</i>. 2006;243(10):2331-2343. doi:<a href="https://doi.org/10.1002/pssb.200668054">10.1002/pssb.200668054</a>
  apa: Nau, D., Schönhardt, A., Bauer, C., Christ, A., Zentgraf, T., Kuhl, J., &#38;
    Giessen, H. (2006). Disorder issues in metallic photonic crystals. <i>Physica
    Status Solidi (B)</i>, <i>243</i>(10), 2331–2343. <a href="https://doi.org/10.1002/pssb.200668054">https://doi.org/10.1002/pssb.200668054</a>
  bibtex: '@article{Nau_Schönhardt_Bauer_Christ_Zentgraf_Kuhl_Giessen_2006, title={Disorder
    issues in metallic photonic crystals}, volume={243}, DOI={<a href="https://doi.org/10.1002/pssb.200668054">10.1002/pssb.200668054</a>},
    number={10}, journal={physica status solidi (b)}, publisher={Wiley-Blackwell},
    author={Nau, D. and Schönhardt, A. and Bauer, C. and Christ, A. and Zentgraf,
    Thomas and Kuhl, J. and Giessen, H.}, year={2006}, pages={2331–2343} }'
  chicago: 'Nau, D., A. Schönhardt, C. Bauer, A. Christ, Thomas Zentgraf, J. Kuhl,
    and H. Giessen. “Disorder Issues in Metallic Photonic Crystals.” <i>Physica Status
    Solidi (B)</i> 243, no. 10 (2006): 2331–43. <a href="https://doi.org/10.1002/pssb.200668054">https://doi.org/10.1002/pssb.200668054</a>.'
  ieee: D. Nau <i>et al.</i>, “Disorder issues in metallic photonic crystals,” <i>physica
    status solidi (b)</i>, vol. 243, no. 10, pp. 2331–2343, 2006.
  mla: Nau, D., et al. “Disorder Issues in Metallic Photonic Crystals.” <i>Physica
    Status Solidi (B)</i>, vol. 243, no. 10, Wiley-Blackwell, 2006, pp. 2331–43, doi:<a
    href="https://doi.org/10.1002/pssb.200668054">10.1002/pssb.200668054</a>.
  short: D. Nau, A. Schönhardt, C. Bauer, A. Christ, T. Zentgraf, J. Kuhl, H. Giessen,
    Physica Status Solidi (B) 243 (2006) 2331–2343.
date_created: 2018-03-23T13:01:20Z
date_updated: 2022-01-06T06:53:14Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.200668054
intvolume: '       243'
issue: '10'
page: 2331-2343
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley-Blackwell
status: public
title: Disorder issues in metallic photonic crystals
type: journal_article
user_id: '30525'
volume: 243
year: '2006'
...
---
_id: '1753'
author:
- first_name: A.
  full_name: Christ, A.
  last_name: Christ
- first_name: Thomas
  full_name: Zentgraf, Thomas
  id: '30525'
  last_name: Zentgraf
  orcid: 0000-0002-8662-1101
- first_name: S. G.
  full_name: Tikhodeev, S. G.
  last_name: Tikhodeev
- first_name: N. A.
  full_name: Gippius, N. A.
  last_name: Gippius
- first_name: O. J. F.
  full_name: Martin, O. J. F.
  last_name: Martin
- first_name: J.
  full_name: Kuhl, J.
  last_name: Kuhl
- first_name: H.
  full_name: Giessen, H.
  last_name: Giessen
citation:
  ama: Christ A, Zentgraf T, Tikhodeev SG, et al. Interaction between localized and
    delocalized surface plasmon polariton modes in a metallic photonic crystal. <i>physica
    status solidi (b)</i>. 2006;243(10):2344-2348. doi:<a href="https://doi.org/10.1002/pssb.200668055">10.1002/pssb.200668055</a>
  apa: Christ, A., Zentgraf, T., Tikhodeev, S. G., Gippius, N. A., Martin, O. J. F.,
    Kuhl, J., &#38; Giessen, H. (2006). Interaction between localized and delocalized
    surface plasmon polariton modes in a metallic photonic crystal. <i>Physica Status
    Solidi (B)</i>, <i>243</i>(10), 2344–2348. <a href="https://doi.org/10.1002/pssb.200668055">https://doi.org/10.1002/pssb.200668055</a>
  bibtex: '@article{Christ_Zentgraf_Tikhodeev_Gippius_Martin_Kuhl_Giessen_2006, title={Interaction
    between localized and delocalized surface plasmon polariton modes in a metallic
    photonic crystal}, volume={243}, DOI={<a href="https://doi.org/10.1002/pssb.200668055">10.1002/pssb.200668055</a>},
    number={10}, journal={physica status solidi (b)}, publisher={Wiley-Blackwell},
    author={Christ, A. and Zentgraf, Thomas and Tikhodeev, S. G. and Gippius, N. A.
    and Martin, O. J. F. and Kuhl, J. and Giessen, H.}, year={2006}, pages={2344–2348}
    }'
  chicago: 'Christ, A., Thomas Zentgraf, S. G. Tikhodeev, N. A. Gippius, O. J. F.
    Martin, J. Kuhl, and H. Giessen. “Interaction between Localized and Delocalized
    Surface Plasmon Polariton Modes in a Metallic Photonic Crystal.” <i>Physica Status
    Solidi (B)</i> 243, no. 10 (2006): 2344–48. <a href="https://doi.org/10.1002/pssb.200668055">https://doi.org/10.1002/pssb.200668055</a>.'
  ieee: A. Christ <i>et al.</i>, “Interaction between localized and delocalized surface
    plasmon polariton modes in a metallic photonic crystal,” <i>physica status solidi
    (b)</i>, vol. 243, no. 10, pp. 2344–2348, 2006.
  mla: Christ, A., et al. “Interaction between Localized and Delocalized Surface Plasmon
    Polariton Modes in a Metallic Photonic Crystal.” <i>Physica Status Solidi (B)</i>,
    vol. 243, no. 10, Wiley-Blackwell, 2006, pp. 2344–48, doi:<a href="https://doi.org/10.1002/pssb.200668055">10.1002/pssb.200668055</a>.
  short: A. Christ, T. Zentgraf, S.G. Tikhodeev, N.A. Gippius, O.J.F. Martin, J. Kuhl,
    H. Giessen, Physica Status Solidi (B) 243 (2006) 2344–2348.
date_created: 2018-03-23T13:02:32Z
date_updated: 2022-01-06T06:53:14Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.200668055
intvolume: '       243'
issue: '10'
page: 2344-2348
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
publisher: Wiley-Blackwell
status: public
title: Interaction between localized and delocalized surface plasmon polariton modes
  in a metallic photonic crystal
type: journal_article
user_id: '30525'
volume: 243
year: '2006'
...
---
_id: '8668'
author:
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: P.
  full_name: Kailuweit, P.
  last_name: Kailuweit
- first_name: R.
  full_name: Roescu, R.
  last_name: Roescu
- first_name: A. D.
  full_name: Wieck, A. D.
  last_name: Wieck
- first_name: O. S.
  full_name: Wibbelhoff, O. S.
  last_name: Wibbelhoff
- first_name: A.
  full_name: Lorke, A.
  last_name: Lorke
- first_name: U.
  full_name: Zeitler, U.
  last_name: Zeitler
- first_name: J. C.
  full_name: Maan, J. C.
  last_name: Maan
citation:
  ama: 'Reuter D, Kailuweit P, Roescu R, et al. Hole and electron wave functions in
    self-assembled InAs quantum dots: a comparison. <i>physica status solidi (b)</i>.
    2006:3942-3945. doi:<a href="https://doi.org/10.1002/pssb.200671520">10.1002/pssb.200671520</a>'
  apa: 'Reuter, D., Kailuweit, P., Roescu, R., Wieck, A. D., Wibbelhoff, O. S., Lorke,
    A., … Maan, J. C. (2006). Hole and electron wave functions in self-assembled InAs
    quantum dots: a comparison. <i>Physica Status Solidi (B)</i>, 3942–3945. <a href="https://doi.org/10.1002/pssb.200671520">https://doi.org/10.1002/pssb.200671520</a>'
  bibtex: '@article{Reuter_Kailuweit_Roescu_Wieck_Wibbelhoff_Lorke_Zeitler_Maan_2006,
    title={Hole and electron wave functions in self-assembled InAs quantum dots: a
    comparison}, DOI={<a href="https://doi.org/10.1002/pssb.200671520">10.1002/pssb.200671520</a>},
    journal={physica status solidi (b)}, author={Reuter, Dirk and Kailuweit, P. and
    Roescu, R. and Wieck, A. D. and Wibbelhoff, O. S. and Lorke, A. and Zeitler, U.
    and Maan, J. C.}, year={2006}, pages={3942–3945} }'
  chicago: 'Reuter, Dirk, P. Kailuweit, R. Roescu, A. D. Wieck, O. S. Wibbelhoff,
    A. Lorke, U. Zeitler, and J. C. Maan. “Hole and Electron Wave Functions in Self-Assembled
    InAs Quantum Dots: A Comparison.” <i>Physica Status Solidi (B)</i>, 2006, 3942–45.
    <a href="https://doi.org/10.1002/pssb.200671520">https://doi.org/10.1002/pssb.200671520</a>.'
  ieee: 'D. Reuter <i>et al.</i>, “Hole and electron wave functions in self-assembled
    InAs quantum dots: a comparison,” <i>physica status solidi (b)</i>, pp. 3942–3945,
    2006.'
  mla: 'Reuter, Dirk, et al. “Hole and Electron Wave Functions in Self-Assembled InAs
    Quantum Dots: A Comparison.” <i>Physica Status Solidi (B)</i>, 2006, pp. 3942–45,
    doi:<a href="https://doi.org/10.1002/pssb.200671520">10.1002/pssb.200671520</a>.'
  short: D. Reuter, P. Kailuweit, R. Roescu, A.D. Wieck, O.S. Wibbelhoff, A. Lorke,
    U. Zeitler, J.C. Maan, Physica Status Solidi (B) (2006) 3942–3945.
date_created: 2019-03-27T09:08:09Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.200671520
language:
- iso: eng
page: 3942-3945
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: 'Hole and electron wave functions in self-assembled InAs quantum dots: a comparison'
type: journal_article
user_id: '42514'
year: '2006'
...
---
_id: '8669'
author:
- first_name: R.
  full_name: Oulton, R.
  last_name: Oulton
- first_name: S. Yu.
  full_name: Verbin, S. Yu.
  last_name: Verbin
- first_name: T.
  full_name: Auer, T.
  last_name: Auer
- first_name: R. V.
  full_name: Cherbunin, R. V.
  last_name: Cherbunin
- first_name: A.
  full_name: Greilich, A.
  last_name: Greilich
- first_name: D. R.
  full_name: Yakovlev, D. R.
  last_name: Yakovlev
- first_name: M.
  full_name: Bayer, M.
  last_name: Bayer
- first_name: Dirk
  full_name: Reuter, Dirk
  id: '37763'
  last_name: Reuter
- first_name: A.
  full_name: Wieck, A.
  last_name: Wieck
citation:
  ama: Oulton R, Verbin SY, Auer T, et al. Sub-second electron spin lifetimes in quantum
    dots at zero applied magnetic field due to alignment of QD nuclei. <i>physica
    status solidi (b)</i>. 2006:3922-3927. doi:<a href="https://doi.org/10.1002/pssb.200671529">10.1002/pssb.200671529</a>
  apa: Oulton, R., Verbin, S. Y., Auer, T., Cherbunin, R. V., Greilich, A., Yakovlev,
    D. R., … Wieck, A. (2006). Sub-second electron spin lifetimes in quantum dots
    at zero applied magnetic field due to alignment of QD nuclei. <i>Physica Status
    Solidi (B)</i>, 3922–3927. <a href="https://doi.org/10.1002/pssb.200671529">https://doi.org/10.1002/pssb.200671529</a>
  bibtex: '@article{Oulton_Verbin_Auer_Cherbunin_Greilich_Yakovlev_Bayer_Reuter_Wieck_2006,
    title={Sub-second electron spin lifetimes in quantum dots at zero applied magnetic
    field due to alignment of QD nuclei}, DOI={<a href="https://doi.org/10.1002/pssb.200671529">10.1002/pssb.200671529</a>},
    journal={physica status solidi (b)}, author={Oulton, R. and Verbin, S. Yu. and
    Auer, T. and Cherbunin, R. V. and Greilich, A. and Yakovlev, D. R. and Bayer,
    M. and Reuter, Dirk and Wieck, A.}, year={2006}, pages={3922–3927} }'
  chicago: Oulton, R., S. Yu. Verbin, T. Auer, R. V. Cherbunin, A. Greilich, D. R.
    Yakovlev, M. Bayer, Dirk Reuter, and A. Wieck. “Sub-Second Electron Spin Lifetimes
    in Quantum Dots at Zero Applied Magnetic Field Due to Alignment of QD Nuclei.”
    <i>Physica Status Solidi (B)</i>, 2006, 3922–27. <a href="https://doi.org/10.1002/pssb.200671529">https://doi.org/10.1002/pssb.200671529</a>.
  ieee: R. Oulton <i>et al.</i>, “Sub-second electron spin lifetimes in quantum dots
    at zero applied magnetic field due to alignment of QD nuclei,” <i>physica status
    solidi (b)</i>, pp. 3922–3927, 2006.
  mla: Oulton, R., et al. “Sub-Second Electron Spin Lifetimes in Quantum Dots at Zero
    Applied Magnetic Field Due to Alignment of QD Nuclei.” <i>Physica Status Solidi
    (B)</i>, 2006, pp. 3922–27, doi:<a href="https://doi.org/10.1002/pssb.200671529">10.1002/pssb.200671529</a>.
  short: R. Oulton, S.Y. Verbin, T. Auer, R.V. Cherbunin, A. Greilich, D.R. Yakovlev,
    M. Bayer, D. Reuter, A. Wieck, Physica Status Solidi (B) (2006) 3922–3927.
date_created: 2019-03-27T09:12:55Z
date_updated: 2022-01-06T07:03:58Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssb.200671529
language:
- iso: eng
page: 3922-3927
publication: physica status solidi (b)
publication_identifier:
  issn:
  - 0370-1972
  - 1521-3951
publication_status: published
status: public
title: Sub-second electron spin lifetimes in quantum dots at zero applied magnetic
  field due to alignment of QD nuclei
type: journal_article
user_id: '42514'
year: '2006'
...