@article{8681,
  author       = {{Borri, P. and Langbein, W. and Woggon, U. and Stavarache, V. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Exciton dephasing via phonon interactions in InAs quantum dots: Dependence on quantum confinement}}},
  doi          = {{10.1103/physrevb.71.115328}},
  year         = {{2005}},
}

@article{8682,
  author       = {{Pfalz, S. and Winkler, R. and Nowitzki, T. and Reuter, Dirk and Wieck, A. D. and Hägele, D. and Oestreich, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Optical orientation of electron spins in GaAs quantum wells}}},
  doi          = {{10.1103/physrevb.71.165305}},
  year         = {{2005}},
}

@article{4249,
  abstract     = {{The interaction of electrons with LO phonons provides an important mechanism of optical dephasing and
carrier scattering for the two-dimensional electron gas in semiconductor quantum wells. In this paper, the
corresponding ultrafast nonlinearities for off-resonant and resonant intersubband excitations are investigated.
Quantum kinetic effects of the electron-phonon interaction and the corresponding violation of the microscopic
energy conservation yield a qualitative different picture compared to the standard Markovian theory, if the
phonon energy is larger than the intersubband-gap energy.}},
  author       = {{Butscher, Stefan and Förstner, Jens and Waldmüller, Inès and Knorr, Andreas}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{4}},
  pages        = {{045314--045314--4}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Ultrafast electron-phonon interaction of intersubband transitions: Quantum kinetics from adiabatic following to Rabi-oscillations}}},
  doi          = {{10.1103/physrevb.72.045314}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{4254,
  abstract     = {{A microscopic description based on the density matrix formalism is developed to describe the dynamics of
photoemission of hot electrons at semiconductor surfaces, including the interaction of bulk and surface states.
The equations of motion for the electronic occupations and transitions include the interaction with arbitrary
optical fields as well as the electron-phonon coupling. Model wave functions are used to qualitatively describe
the bulk-surface dynamics and the subsequent time resolved two-photon photoemission s2PPEd spectra. Our
results suggest that it is possible to extract energetic and temporal information of the underlying dynamical
occupations of the intermediate states from the 2PPE spectra.}},
  author       = {{Zeiser, A. and Bücking, N. and Förstner, Jens and Knorr, A.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Microscopic theory of electron dynamics and time-resolved two-color two-photon photoemission at semiconductor surfaces}}},
  doi          = {{10.1103/physrevb.71.245309}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{4260,
  abstract     = {{Using a fully quantized description of strongly confined electrons interacting with acoustic phonons and the
photon field, the nonstationary resonance-fluorescence spectra of a semiconductor quantum dot are investigated.
For excitation pulses with durations approaching typical electron-phonon scattering times, the virtual
quantum processes yield an observable electron-phonon sideband broadening.}},
  author       = {{Ahn, K. J. and Förstner, Jens and Knorr, A.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qd}},
  number       = {{15}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Resonance fluorescence of semiconductor quantum dots: Signatures of the electron-phonon interaction}}},
  doi          = {{10.1103/physrevb.71.153309}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{23502,
  abstract     = {{Significant aspects of the light–matter interaction can be strongly modified in suitably designed systems consisting of semiconductor nanostructures and dielectric photonic crystals. To analyze such effects, a microscopic theory is presented, which is capable of describing the optoelectronic properties of such hybrid systems via a self-consistent solution of the dynamics of the optical field and the photoexcitations of the material. The theory is applied to investigate the local excitonic resonances, which arise as a consequence of the modified Coulomb interaction in the vicinity of a structured dielectric medium. The excitation of a coherent superposition of the spatially inhomogeneous optical transitions induces an intricate wave packet dynamics. In the presence of dephasing and relaxation processes, the coherent oscillations are damped and the photoexcited carriers relax into spatially inhomogeneous quasi-equilibrium distributions.}},
  author       = {{Pasenow, B. and Reichelt, Matthias and Stroucken, T. and Meier, Torsten and Koch, S. W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{19}},
  pages        = {{195321}},
  title        = {{{Excitonic wave packet dynamics in semiconductor photonic-crystal structures}}},
  doi          = {{10.1103/physrevb.71.195321}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{23501,
  abstract     = {{A set of (Ga0.77In0.23)As/Ga(NxAs1−x) heterostructures is studied by time-resolved photoluminescence. Four samples with nitrogen concentrations from x=0.48% up to x=2.2% are investigated at different temperatures and with different excitation densities. The experiments suggest that the heterostructure band offset is type I for x=0.48% and type II for x=2.2%. The situation is more complex for x=0.72% and x=1.25%, since these samples are close to the transition from type I to type II. The experimental findings are analyzed using a detailed microscopic theory. Numerical calculations describe the measured data well. In particular, the interpretation of the experimental results concerning the band alignment is confirmed by the theoretical analysis.}},
  author       = {{Hantke, K. and Heber, J. D. and Schlichenmaier, C. and Thränhardt, A. and Meier, Torsten and Kunert, B. and Volz, K. and Stolz, W. and Koch, S. W. and Rühle, W. W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{16}},
  title        = {{{Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures}}},
  doi          = {{10.1103/physrevb.71.165320}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{23496,
  abstract     = {{The optical and electronic properties of semiconductor heterostructures in the vicinity of photonic crystals are discussed. The theoretical approach provides a self-consistent solution of the dynamics of the electromagnetic field and the material excitations. Due to the influence of the structured dielectric environment on the Coulomb interaction, the exciton resonances and the quasiequilibrium carrier densities in the spatially homogeneous semiconductor become space dependent. It is demonstrated that these inhomogeneities lead to distinct modifications of the optical absorption and gain spectra. As an application, numerically calculated density-dependent optical spectra are analyzed for an array of semiconductor quantum wires which are close to a two-dimensional photonic crystal. The spatial inhomogeneities result in novel excitonic absorption features and modification of the optical gain in these structures.}},
  author       = {{Reichelt, Matthias and Pasenow, B. and Meier, Torsten and Stroucken, T. and Koch, S. W.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{3}},
  title        = {{{Spatially inhomogeneous optical gain in semiconductor photonic-crystal structures}}},
  doi          = {{10.1103/physrevb.71.035346}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{13706,
  author       = {{Hermann, A. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Optical response ofπ-conjugated molecular monolayer adsorbed on the semiconductor Si(001) surface: A first-principles study}}},
  doi          = {{10.1103/physrevb.71.153311}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{13696,
  author       = {{Bechstedt, F. and Seino, K. and Hahn, P. H. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  title        = {{{Quasiparticle bands and optical spectra of highly ionic crystals: AlN and NaCl}}},
  doi          = {{10.1103/physrevb.72.245114}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{13705,
  author       = {{Leitsmann, R. and Schmidt, Wolf Gero and Hahn, P. H. and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Second-harmonic polarizability including electron-hole attraction from band-structure theory}}},
  doi          = {{10.1103/physrevb.71.195209}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{13702,
  author       = {{Fuchs, F. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{7}},
  title        = {{{Understanding the optical anisotropy of oxidized Si(001) surfaces}}},
  doi          = {{10.1103/physrevb.72.075353}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{13846,
  author       = {{Hahn, P. H. and Schmidt, Wolf Gero and Bechstedt, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{24}},
  title        = {{{Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics}}},
  doi          = {{10.1103/physrevb.72.245425}},
  volume       = {{72}},
  year         = {{2005}},
}

@article{15849,
  author       = {{Schumacher, Stefan and Czycholl, G. and Jahnke, F. and Kudyk, I. and Rückmann, H. I. and Gutowski, J. and Gust, A. and Alexe, G. and Hommel, D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Polariton propagation in shallow-confinement heterostructures: Microscopic theory and experiment showing the breakdown of the dead-layer concept}}},
  doi          = {{10.1103/physrevb.70.235340}},
  year         = {{2005}},
}

@article{15850,
  author       = {{Schumacher, Stefan and Czycholl, G. and Jahnke, F. and Kudyk, I. and Wischmeier, L. and Rückmann, I. and Voss, T. and Gutowski, J. and Gust, A. and Hommel, D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Coherent propagation of polaritons in semiconductor heterostructures: Nonlinear pulse transmission in theory and experiment}}},
  doi          = {{10.1103/physrevb.72.081308}},
  year         = {{2005}},
}

@article{23503,
  author       = {{Oszwałdowski, R. and Reichelt, Matthias and Meier, Torsten and Koch, S. W. and Rohlfing, Michael}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{23}},
  title        = {{{Nonlinear optical response of the  Si ( 111 ) − ( 2 × 1 )  surface exciton: Influence of biexciton many-body correlations}}},
  doi          = {{10.1103/physrevb.71.235324}},
  volume       = {{71}},
  year         = {{2005}},
}

@article{1746,
  author       = {{Christ, A. and Zentgraf, Thomas and Kuhl, J. and Tikhodeev, S. G. and Gippius, N. A. and Giessen, H.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Optical properties of planar metallic photonic crystal structures: Experiment and theory}}},
  doi          = {{10.1103/physrevb.70.125113}},
  volume       = {{70}},
  year         = {{2004}},
}

@article{8704,
  author       = {{Langbein, W. and Borri, P. and Woggon, U. and Stavarache, V. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Control of fine-structure splitting and biexciton binding inInxGa1−xAsquantum dots by annealing}}},
  doi          = {{10.1103/physrevb.69.161301}},
  year         = {{2004}},
}

@article{8709,
  author       = {{Langbein, W. and Borri, P. and Woggon, U. and Stavarache, V. and Reuter, Dirk and Wieck, A.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Radiatively limited dephasing in InAs quantum dots}}},
  doi          = {{10.1103/physrevb.70.033301}},
  year         = {{2004}},
}

@article{8710,
  author       = {{Deviatov, E. V. and Würtz, A. and Lorke, A. and Yu. Melnikov, M. and Dolgopolov, V. T. and Reuter, Dirk and Wieck, A. D.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Two relaxation mechanisms observed in transport between spin-split edge states at high imbalance}}},
  doi          = {{10.1103/physrevb.69.115330}},
  year         = {{2004}},
}