@article{1715,
  author       = {{Ishikawa, Atsushi and Oulton, Rupert F. and Zentgraf, Thomas and Zhang, Xiang}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{15}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Slow-light dispersion by transparent waveguide plasmon polaritons}}},
  doi          = {{10.1103/physrevb.85.155108}},
  volume       = {{85}},
  year         = {{2012}},
}

@article{13546,
  author       = {{Riefer, A. and Rauls, E. and Schmidt, Wolf Gero and Eberhard, J. and Stoll, I. and Mattay, J.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{16}},
  title        = {{{2-Aminopyrimidine-silver(I) based organic semiconductors: Electronic structure and optical response}}},
  doi          = {{10.1103/physrevb.85.165202}},
  volume       = {{85}},
  year         = {{2012}},
}

@article{13539,
  author       = {{Rode, S. and Hölscher, R. and Sanna, S. and Klassen, S. and Kobayashi, K. and Yamada, H. and Schmidt, Wolf Gero and Kühnle, A.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{7}},
  title        = {{{Atomic-resolution imaging of the polar (0001¯) surface of LiNbO3in aqueous solution by frequency modulation atomic force microscopy}}},
  doi          = {{10.1103/physrevb.86.075468}},
  volume       = {{86}},
  year         = {{2012}},
}

@article{13541,
  author       = {{Landmann, M. and Köhler, T. and Köppen, S. and Rauls, E. and Frauenheim, T. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{6}},
  title        = {{{Fingerprints of order and disorder in the electronic and optical properties of crystalline and amorphous TiO2}}},
  doi          = {{10.1103/physrevb.86.064201}},
  volume       = {{86}},
  year         = {{2012}},
}

@article{13538,
  author       = {{Riefer, A. and Sanna, S. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{12}},
  title        = {{{Polarization-dependent methanol adsorption on lithium niobate Z-cut surfaces}}},
  doi          = {{10.1103/physrevb.86.125410}},
  volume       = {{86}},
  year         = {{2012}},
}

@article{7698,
  author       = {{Han, Jong E. and Fischer, Saskia F. and Buchholz, Sven S. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D. and Bird, Jonathan P.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{19}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Many-body enhanced nonlinear conductance resonance in quantum channels}}},
  doi          = {{10.1103/physrevb.84.193302}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{7702,
  author       = {{Spatzek, S. and Varwig, S. and Glazov, M. M. and Yugova, I. A. and Schwan, A. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{11}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration}}},
  doi          = {{10.1103/physrevb.84.115309}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{7703,
  author       = {{Notthoff, Christian and Reuter, Dirk and Wieck, Andreas D. and Lorke, Axel}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{3}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions}}},
  doi          = {{10.1103/physrevb.84.035311}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{7704,
  author       = {{Cherbunin, R. V. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev, I. V. and Kuznetsova, M. S. and Petrov, M. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{4}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Resonant nuclear spin pumping in (In,Ga)As quantum dots}}},
  doi          = {{10.1103/physrevb.84.041304}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{7707,
  author       = {{Schinner, G. J. and Schubert, E. and Stallhofer, M. P. and Kotthaus, J. P. and Schuh, D. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Govorov, A. O.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{16}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells}}},
  doi          = {{10.1103/physrevb.83.165308}},
  volume       = {{83}},
  year         = {{2011}},
}

@article{4150,
  abstract     = {{Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and
first-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the
precipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical
treatment, basic processes assumed in the precipitation process are calculated in feasible systems of small
size. The migration mechanism of a carbon 100 interstitial and silicon 11 0 self-interstitial in otherwise
defect-free silicon are investigated using density functional theory calculations. The influence of a nearby
vacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been
investigated systematically. Interactions of various combinations of defects have been characterized including a
couple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend
to agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon
bonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range
capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A
rather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions
regarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to
experimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects
and carbon diffusion in silicon are compared to results of classical potential simulations revealing significant
limitations of the latter method. An approach to work around this problem is proposed. Finally, results of the
classical potential molecular dynamics simulations of large systems are examined, which reinforce previous
assumptions and give further insight into basic processes involved in the silicon carbide transition.}},
  author       = {{Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{6}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}}},
  doi          = {{10.1103/physrevb.84.064126}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{1723,
  author       = {{Utikal, Tobias and Zentgraf, Thomas and Tikhodeev, Sergei G. and Lippitz, Markus and Giessen, Harald}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{7}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices}}},
  doi          = {{10.1103/physrevb.84.075101}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{13568,
  author       = {{Mietze, C. and Landmann, M. and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien, F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{19}},
  title        = {{{Band offsets in cubic GaN/AlN superlattices}}},
  doi          = {{10.1103/physrevb.83.195301}},
  volume       = {{83}},
  year         = {{2011}},
}

@article{13570,
  author       = {{Müllegger, S. and Rashidi, M. and Lengauer, T. and Rauls, E. and Schmidt, Wolf Gero and Knör, G. and Schöfberger, W. and Koch, R.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{16}},
  title        = {{{Asymmetric saddling of single porphyrin molecules on Au(111)}}},
  doi          = {{10.1103/physrevb.83.165416}},
  volume       = {{83}},
  year         = {{2011}},
}

@article{13563,
  author       = {{Schmidt, Wolf Gero and Babilon, M. and Thierfelder, C. and Sanna, S. and Wippermann, S.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{11}},
  title        = {{{Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array}}},
  doi          = {{10.1103/physrevb.84.115416}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{13564,
  author       = {{dos Santos, L. S. and Schmidt, Wolf Gero and Rauls, E.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{11}},
  title        = {{{Group-VII point defects in ZnSe}}},
  doi          = {{10.1103/physrevb.84.115201}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{13825,
  author       = {{Sanna, S. and Thierfelder, C. and Wippermann, S. and Sinha, T. P. and Schmidt, Wolf Gero}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{5}},
  title        = {{{Barium titanate ground- and excited-state properties from first-principles calculations}}},
  doi          = {{10.1103/physrevb.83.054112}},
  volume       = {{83}},
  year         = {{2011}},
}

@article{13824,
  author       = {{Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  number       = {{6}},
  title        = {{{Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon}}},
  doi          = {{10.1103/physrevb.84.064126}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{4046,
  abstract     = {{We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs
single quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane
electron Land´e g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus
splitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure
higher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are
very well described within 14 × 14 band k·p theory and illustrate that the electron spin is an excellent meter
variable for mapping out the internal—otherwise hidden—symmetries in two-dimensional systems. Fourth-order
perturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a
qualitative understanding of the observed effects.}},
  author       = {{Hübner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwała, M. and Duc, H. T. and Förstner, Jens and Meier, Torsten and Oestreich, M.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  keywords     = {{tet_topic_qw}},
  number       = {{4}},
  pages        = {{041301(R)}},
  publisher    = {{American Physical Society (APS)}},
  title        = {{{Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells}}},
  doi          = {{10.1103/physrevb.84.041301}},
  volume       = {{84}},
  year         = {{2011}},
}

@article{26499,
  author       = {{Kuhl, U. and Barkhofen, Sonja and Tudorovskiy, T. and Stöckmann, H.-J. and Hossain, T. and de Forges de Parny, L. and Mortessagne, F.}},
  issn         = {{1098-0121}},
  journal      = {{Physical Review B}},
  title        = {{{Dirac point and edge states in a microwave realization of tight-binding graphene-like structures}}},
  doi          = {{10.1103/physrevb.82.094308}},
  year         = {{2010}},
}

