[{"type":"journal_article","publication":"Physical Review B","status":"public","abstract":[{"text":"Starting from the extended Su-Schrieffer-Heeger model, multiband semiconductor Bloch equations are formulated in momentum space and applied to the analysis of the linear optical response of semiconducting carbon nanotubes (SCNTs). This formalism includes the coupling of electron-hole pair excitations between different valence and conduction bands, originating from the electron-hole Coulomb attraction. The influence of these couplings, which are referred to as nondiagonal interband Coulomb interaction (NDI-CI), on the linear excitonic absorption spectra is investigated and discussed for light fields polarized parallel to the tube direction. The results show that the intervalley NDI-CI leads to a significant increase of the band gap and a decrease of the exciton binding energy that results in a blueshift of the lowest-frequency excitonic absorption peak. The strength of these effects depends on the symmetry of the SCNT. Furthermore, for zigzag SCNTs with higher symmetry other nonintervalley NDI-CI terms also affect the spectral positions of excitonic absorption peaks.","lang":"eng"}],"user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"297"},{"_id":"230"},{"_id":"35"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"},{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"_id":"15864","language":[{"iso":"eng"}],"article_number":"155407","issue":"15","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"ama":"Liu H, Schumacher S, Meier T. Influence of Coulomb-induced band couplings on linear excitonic absorption spectra of semiconducting carbon nanotubes. <i>Physical Review B</i>. 2014;89(15). doi:<a href=\"https://doi.org/10.1103/physrevb.89.155407\">10.1103/physrevb.89.155407</a>","ieee":"H. Liu, S. Schumacher, and T. Meier, “Influence of Coulomb-induced band couplings on linear excitonic absorption spectra of semiconducting carbon nanotubes,” <i>Physical Review B</i>, vol. 89, no. 15, Art. no. 155407, 2014, doi: <a href=\"https://doi.org/10.1103/physrevb.89.155407\">10.1103/physrevb.89.155407</a>.","chicago":"Liu, Hong, Stefan Schumacher, and Torsten Meier. “Influence of Coulomb-Induced Band Couplings on Linear Excitonic Absorption Spectra of Semiconducting Carbon Nanotubes.” <i>Physical Review B</i> 89, no. 15 (2014). <a href=\"https://doi.org/10.1103/physrevb.89.155407\">https://doi.org/10.1103/physrevb.89.155407</a>.","short":"H. Liu, S. Schumacher, T. Meier, Physical Review B 89 (2014).","bibtex":"@article{Liu_Schumacher_Meier_2014, title={Influence of Coulomb-induced band couplings on linear excitonic absorption spectra of semiconducting carbon nanotubes}, volume={89}, DOI={<a href=\"https://doi.org/10.1103/physrevb.89.155407\">10.1103/physrevb.89.155407</a>}, number={15155407}, journal={Physical Review B}, author={Liu, Hong and Schumacher, Stefan and Meier, Torsten}, year={2014} }","mla":"Liu, Hong, et al. “Influence of Coulomb-Induced Band Couplings on Linear Excitonic Absorption Spectra of Semiconducting Carbon Nanotubes.” <i>Physical Review B</i>, vol. 89, no. 15, 155407, 2014, doi:<a href=\"https://doi.org/10.1103/physrevb.89.155407\">10.1103/physrevb.89.155407</a>.","apa":"Liu, H., Schumacher, S., &#38; Meier, T. (2014). Influence of Coulomb-induced band couplings on linear excitonic absorption spectra of semiconducting carbon nanotubes. <i>Physical Review B</i>, <i>89</i>(15), Article 155407. <a href=\"https://doi.org/10.1103/physrevb.89.155407\">https://doi.org/10.1103/physrevb.89.155407</a>"},"intvolume":"        89","year":"2014","author":[{"first_name":"Hong","last_name":"Liu","full_name":"Liu, Hong"},{"id":"27271","full_name":"Schumacher, Stefan","last_name":"Schumacher","orcid":"0000-0003-4042-4951","first_name":"Stefan"},{"orcid":"0000-0001-8864-2072","last_name":"Meier","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"}],"date_created":"2020-02-10T11:55:39Z","volume":89,"date_updated":"2025-12-05T14:51:59Z","doi":"10.1103/physrevb.89.155407","title":"Influence of Coulomb-induced band couplings on linear excitonic absorption spectra of semiconducting carbon nanotubes"},{"user_id":"48188","_id":"26497","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","date_created":"2021-10-19T06:59:46Z","author":[{"id":"48188","full_name":"Barkhofen, Sonja","last_name":"Barkhofen","first_name":"Sonja"},{"first_name":"M.","full_name":"Bellec, M.","last_name":"Bellec"},{"last_name":"Kuhl","full_name":"Kuhl, U.","first_name":"U."},{"full_name":"Mortessagne, F.","last_name":"Mortessagne","first_name":"F."}],"date_updated":"2022-01-06T06:57:21Z","doi":"10.1103/physrevb.87.035101","title":"Disordered graphene and boron nitride in a microwave tight-binding analog","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"chicago":"Barkhofen, Sonja, M. Bellec, U. Kuhl, and F. Mortessagne. “Disordered Graphene and Boron Nitride in a Microwave Tight-Binding Analog.” <i>Physical Review B</i>, 2013. <a href=\"https://doi.org/10.1103/physrevb.87.035101\">https://doi.org/10.1103/physrevb.87.035101</a>.","ieee":"S. Barkhofen, M. Bellec, U. Kuhl, and F. Mortessagne, “Disordered graphene and boron nitride in a microwave tight-binding analog,” <i>Physical Review B</i>, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.87.035101\">10.1103/physrevb.87.035101</a>.","ama":"Barkhofen S, Bellec M, Kuhl U, Mortessagne F. Disordered graphene and boron nitride in a microwave tight-binding analog. <i>Physical Review B</i>. Published online 2013. doi:<a href=\"https://doi.org/10.1103/physrevb.87.035101\">10.1103/physrevb.87.035101</a>","mla":"Barkhofen, Sonja, et al. “Disordered Graphene and Boron Nitride in a Microwave Tight-Binding Analog.” <i>Physical Review B</i>, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.035101\">10.1103/physrevb.87.035101</a>.","short":"S. Barkhofen, M. Bellec, U. Kuhl, F. Mortessagne, Physical Review B (2013).","bibtex":"@article{Barkhofen_Bellec_Kuhl_Mortessagne_2013, title={Disordered graphene and boron nitride in a microwave tight-binding analog}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.035101\">10.1103/physrevb.87.035101</a>}, journal={Physical Review B}, author={Barkhofen, Sonja and Bellec, M. and Kuhl, U. and Mortessagne, F.}, year={2013} }","apa":"Barkhofen, S., Bellec, M., Kuhl, U., &#38; Mortessagne, F. (2013). Disordered graphene and boron nitride in a microwave tight-binding analog. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.87.035101\">https://doi.org/10.1103/physrevb.87.035101</a>"},"year":"2013"},{"volume":88,"date_created":"2019-01-29T14:01:47Z","author":[{"first_name":"A.","last_name":"Steinhoff","full_name":"Steinhoff, A."},{"first_name":"H.","last_name":"Kurtze","full_name":"Kurtze, H."},{"last_name":"Gartner","full_name":"Gartner, P.","first_name":"P."},{"first_name":"M.","full_name":"Florian, M.","last_name":"Florian"},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."},{"last_name":"Jahnke","full_name":"Jahnke, F.","first_name":"F."}],"date_updated":"2022-01-06T07:03:30Z","publisher":"American Physical Society (APS)","doi":"10.1103/physrevb.88.205309","title":"Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots","issue":"20","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        88","citation":{"apa":"Steinhoff, A., Kurtze, H., Gartner, P., Florian, M., Reuter, D., Wieck, A. D., … Jahnke, F. (2013). Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. <i>Physical Review B</i>, <i>88</i>(20). <a href=\"https://doi.org/10.1103/physrevb.88.205309\">https://doi.org/10.1103/physrevb.88.205309</a>","mla":"Steinhoff, A., et al. “Combined Influence of Coulomb Interaction and Polarons on the Carrier Dynamics in InGaAs Quantum Dots.” <i>Physical Review B</i>, vol. 88, no. 20, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.205309\">10.1103/physrevb.88.205309</a>.","bibtex":"@article{Steinhoff_Kurtze_Gartner_Florian_Reuter_Wieck_Bayer_Jahnke_2013, title={Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.205309\">10.1103/physrevb.88.205309</a>}, number={20}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Steinhoff, A. and Kurtze, H. and Gartner, P. and Florian, M. and Reuter, Dirk and Wieck, A. D. and Bayer, M. and Jahnke, F.}, year={2013} }","short":"A. Steinhoff, H. Kurtze, P. Gartner, M. Florian, D. Reuter, A.D. Wieck, M. Bayer, F. Jahnke, Physical Review B 88 (2013).","chicago":"Steinhoff, A., H. Kurtze, P. Gartner, M. Florian, Dirk Reuter, A. D. Wieck, M. Bayer, and F. Jahnke. “Combined Influence of Coulomb Interaction and Polarons on the Carrier Dynamics in InGaAs Quantum Dots.” <i>Physical Review B</i> 88, no. 20 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.205309\">https://doi.org/10.1103/physrevb.88.205309</a>.","ieee":"A. Steinhoff <i>et al.</i>, “Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots,” <i>Physical Review B</i>, vol. 88, no. 20, 2013.","ama":"Steinhoff A, Kurtze H, Gartner P, et al. Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots. <i>Physical Review B</i>. 2013;88(20). doi:<a href=\"https://doi.org/10.1103/physrevb.88.205309\">10.1103/physrevb.88.205309</a>"},"year":"2013","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7239","language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","status":"public"},{"language":[{"iso":"eng"}],"_id":"7240","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Physical Review B","type":"journal_article","title":"Picosecond real-space imaging of electron spin diffusion in GaAs","doi":"10.1103/physrevb.88.195202","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:30Z","volume":88,"author":[{"first_name":"T.","full_name":"Henn, T.","last_name":"Henn"},{"last_name":"Kiessling","full_name":"Kiessling, T.","first_name":"T."},{"first_name":"W.","full_name":"Ossau, W.","last_name":"Ossau"},{"first_name":"L. W.","full_name":"Molenkamp, L. W.","last_name":"Molenkamp"},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"date_created":"2019-01-29T14:04:19Z","year":"2013","intvolume":"        88","citation":{"apa":"Henn, T., Kiessling, T., Ossau, W., Molenkamp, L. W., Reuter, D., &#38; Wieck, A. D. (2013). Picosecond real-space imaging of electron spin diffusion in GaAs. <i>Physical Review B</i>, <i>88</i>(19). <a href=\"https://doi.org/10.1103/physrevb.88.195202\">https://doi.org/10.1103/physrevb.88.195202</a>","short":"T. Henn, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B 88 (2013).","mla":"Henn, T., et al. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.” <i>Physical Review B</i>, vol. 88, no. 19, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.195202\">10.1103/physrevb.88.195202</a>.","bibtex":"@article{Henn_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Picosecond real-space imaging of electron spin diffusion in GaAs}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.195202\">10.1103/physrevb.88.195202</a>}, number={19}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Henn, T. and Kiessling, T. and Ossau, W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","ama":"Henn T, Kiessling T, Ossau W, Molenkamp LW, Reuter D, Wieck AD. Picosecond real-space imaging of electron spin diffusion in GaAs. <i>Physical Review B</i>. 2013;88(19). doi:<a href=\"https://doi.org/10.1103/physrevb.88.195202\">10.1103/physrevb.88.195202</a>","ieee":"T. Henn, T. Kiessling, W. Ossau, L. W. Molenkamp, D. Reuter, and A. D. Wieck, “Picosecond real-space imaging of electron spin diffusion in GaAs,” <i>Physical Review B</i>, vol. 88, no. 19, 2013.","chicago":"Henn, T., T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A. D. Wieck. “Picosecond Real-Space Imaging of Electron Spin Diffusion in GaAs.” <i>Physical Review B</i> 88, no. 19 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.195202\">https://doi.org/10.1103/physrevb.88.195202</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"19"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"_id":"7258","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2013","intvolume":"        88","citation":{"apa":"Henn, T., Heckel, A., Beck, M., Kiessling, T., Ossau, W., Molenkamp, L. W., … Wieck, A. D. (2013). Hot carrier effects on the magneto-optical detection of electron spins in GaAs. <i>Physical Review B</i>, <i>88</i>(8). <a href=\"https://doi.org/10.1103/physrevb.88.085303\">https://doi.org/10.1103/physrevb.88.085303</a>","short":"T. Henn, A. Heckel, M. Beck, T. Kiessling, W. Ossau, L.W. Molenkamp, D. Reuter, A.D. Wieck, Physical Review B 88 (2013).","mla":"Henn, T., et al. “Hot Carrier Effects on the Magneto-Optical Detection of Electron Spins in GaAs.” <i>Physical Review B</i>, vol. 88, no. 8, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.085303\">10.1103/physrevb.88.085303</a>.","bibtex":"@article{Henn_Heckel_Beck_Kiessling_Ossau_Molenkamp_Reuter_Wieck_2013, title={Hot carrier effects on the magneto-optical detection of electron spins in GaAs}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.085303\">10.1103/physrevb.88.085303</a>}, number={8}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Henn, T. and Heckel, A. and Beck, M. and Kiessling, T. and Ossau, W. and Molenkamp, L. W. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","chicago":"Henn, T., A. Heckel, M. Beck, T. Kiessling, W. Ossau, L. W. Molenkamp, Dirk Reuter, and A. D. Wieck. “Hot Carrier Effects on the Magneto-Optical Detection of Electron Spins in GaAs.” <i>Physical Review B</i> 88, no. 8 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.085303\">https://doi.org/10.1103/physrevb.88.085303</a>.","ieee":"T. Henn <i>et al.</i>, “Hot carrier effects on the magneto-optical detection of electron spins in GaAs,” <i>Physical Review B</i>, vol. 88, no. 8, 2013.","ama":"Henn T, Heckel A, Beck M, et al. Hot carrier effects on the magneto-optical detection of electron spins in GaAs. <i>Physical Review B</i>. 2013;88(8). doi:<a href=\"https://doi.org/10.1103/physrevb.88.085303\">10.1103/physrevb.88.085303</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"8","title":"Hot carrier effects on the magneto-optical detection of electron spins in GaAs","doi":"10.1103/physrevb.88.085303","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:30Z","volume":88,"date_created":"2019-01-30T12:54:43Z","author":[{"last_name":"Henn","full_name":"Henn, T.","first_name":"T."},{"last_name":"Heckel","full_name":"Heckel, A.","first_name":"A."},{"full_name":"Beck, M.","last_name":"Beck","first_name":"M."},{"first_name":"T.","last_name":"Kiessling","full_name":"Kiessling, T."},{"first_name":"W.","full_name":"Ossau, W.","last_name":"Ossau"},{"first_name":"L. W.","full_name":"Molenkamp, L. W.","last_name":"Molenkamp"},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}]},{"doi":"10.1103/physrevb.87.235320","title":"Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations","volume":87,"author":[{"first_name":"M. S.","last_name":"Kuznetsova","full_name":"Kuznetsova, M. S."},{"first_name":"K.","full_name":"Flisinski, K.","last_name":"Flisinski"},{"first_name":"I. Ya.","full_name":"Gerlovin, I. Ya.","last_name":"Gerlovin"},{"first_name":"I. V.","last_name":"Ignatiev","full_name":"Ignatiev, I. V."},{"full_name":"Kavokin, K. V.","last_name":"Kavokin","first_name":"K. V."},{"full_name":"Verbin, S. Yu.","last_name":"Verbin","first_name":"S. Yu."},{"full_name":"Yakovlev, D. R.","last_name":"Yakovlev","first_name":"D. R."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"last_name":"Bayer","full_name":"Bayer, M.","first_name":"M."}],"date_created":"2019-01-31T08:39:43Z","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:32Z","intvolume":"        87","citation":{"short":"M.S. Kuznetsova, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, K.V. Kavokin, S.Y. Verbin, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 87 (2013).","mla":"Kuznetsova, M. S., et al. “Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” <i>Physical Review B</i>, vol. 87, no. 23, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.235320\">10.1103/physrevb.87.235320</a>.","bibtex":"@article{Kuznetsova_Flisinski_Gerlovin_Ignatiev_Kavokin_Verbin_Yakovlev_Reuter_Wieck_Bayer_2013, title={Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.235320\">10.1103/physrevb.87.235320</a>}, number={23}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kuznetsova, M. S. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev, I. V. and Kavokin, K. V. and Verbin, S. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2013} }","apa":"Kuznetsova, M. S., Flisinski, K., Gerlovin, I. Y., Ignatiev, I. V., Kavokin, K. V., Verbin, S. Y., … Bayer, M. (2013). Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. <i>Physical Review B</i>, <i>87</i>(23). <a href=\"https://doi.org/10.1103/physrevb.87.235320\">https://doi.org/10.1103/physrevb.87.235320</a>","ama":"Kuznetsova MS, Flisinski K, Gerlovin IY, et al. Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations. <i>Physical Review B</i>. 2013;87(23). doi:<a href=\"https://doi.org/10.1103/physrevb.87.235320\">10.1103/physrevb.87.235320</a>","chicago":"Kuznetsova, M. S., K. Flisinski, I. Ya. Gerlovin, I. V. Ignatiev, K. V. Kavokin, S. Yu. Verbin, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Hanle Effect in (In,Ga)As Quantum Dots: Role of Nuclear Spin Fluctuations.” <i>Physical Review B</i> 87, no. 23 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.235320\">https://doi.org/10.1103/physrevb.87.235320</a>.","ieee":"M. S. Kuznetsova <i>et al.</i>, “Hanle effect in (In,Ga)As quantum dots: Role of nuclear spin fluctuations,” <i>Physical Review B</i>, vol. 87, no. 23, 2013."},"year":"2013","issue":"23","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7284","status":"public","publication":"Physical Review B","type":"journal_article"},{"_id":"7285","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","status":"public","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:32Z","volume":87,"date_created":"2019-01-31T08:43:51Z","author":[{"full_name":"Komijani, Y.","last_name":"Komijani","first_name":"Y."},{"first_name":"M.","last_name":"Csontos","full_name":"Csontos, M."},{"first_name":"T.","last_name":"Ihn","full_name":"Ihn, T."},{"full_name":"Ensslin, K.","last_name":"Ensslin","first_name":"K."},{"first_name":"Y.","last_name":"Meir","full_name":"Meir, Y."},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"}],"title":"Origins of conductance anomalies in ap-type GaAs quantum point contact","doi":"10.1103/physrevb.87.245406","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"24","year":"2013","intvolume":"        87","citation":{"ama":"Komijani Y, Csontos M, Ihn T, et al. Origins of conductance anomalies in ap-type GaAs quantum point contact. <i>Physical Review B</i>. 2013;87(24). doi:<a href=\"https://doi.org/10.1103/physrevb.87.245406\">10.1103/physrevb.87.245406</a>","ieee":"Y. Komijani <i>et al.</i>, “Origins of conductance anomalies in ap-type GaAs quantum point contact,” <i>Physical Review B</i>, vol. 87, no. 24, 2013.","chicago":"Komijani, Y., M. Csontos, T. Ihn, K. Ensslin, Y. Meir, Dirk Reuter, and A. D. Wieck. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.” <i>Physical Review B</i> 87, no. 24 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.245406\">https://doi.org/10.1103/physrevb.87.245406</a>.","apa":"Komijani, Y., Csontos, M., Ihn, T., Ensslin, K., Meir, Y., Reuter, D., &#38; Wieck, A. D. (2013). Origins of conductance anomalies in ap-type GaAs quantum point contact. <i>Physical Review B</i>, <i>87</i>(24). <a href=\"https://doi.org/10.1103/physrevb.87.245406\">https://doi.org/10.1103/physrevb.87.245406</a>","bibtex":"@article{Komijani_Csontos_Ihn_Ensslin_Meir_Reuter_Wieck_2013, title={Origins of conductance anomalies in ap-type GaAs quantum point contact}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.245406\">10.1103/physrevb.87.245406</a>}, number={24}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Komijani, Y. and Csontos, M. and Ihn, T. and Ensslin, K. and Meir, Y. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","mla":"Komijani, Y., et al. “Origins of Conductance Anomalies in Ap-Type GaAs Quantum Point Contact.” <i>Physical Review B</i>, vol. 87, no. 24, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.245406\">10.1103/physrevb.87.245406</a>.","short":"Y. Komijani, M. 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Cundiff, Physical Review B 87 (2013).","mla":"Moody, G., et al. “Fifth-Order Nonlinear Optical Response of Excitonic States in an InAs Quantum Dot Ensemble Measured with Two-Dimensional Spectroscopy.” <i>Physical Review B</i>, vol. 87, no. 4, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.045313\">10.1103/physrevb.87.045313</a>.","ama":"Moody G, Singh R, Li H, et al. Fifth-order nonlinear optical response of excitonic states in an InAs quantum dot ensemble measured with two-dimensional spectroscopy. <i>Physical Review B</i>. 2013;87(4). doi:<a href=\"https://doi.org/10.1103/physrevb.87.045313\">10.1103/physrevb.87.045313</a>","ieee":"G. Moody <i>et al.</i>, “Fifth-order nonlinear optical response of excitonic states in an InAs quantum dot ensemble measured with two-dimensional spectroscopy,” <i>Physical Review B</i>, vol. 87, no. 4, 2013.","chicago":"Moody, G., R. Singh, H. Li, I. A. Akimov, M. Bayer, Dirk Reuter, A. D. Wieck, and S. T. Cundiff. “Fifth-Order Nonlinear Optical Response of Excitonic States in an InAs Quantum Dot Ensemble Measured with Two-Dimensional Spectroscopy.” <i>Physical Review B</i> 87, no. 4 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.045313\">https://doi.org/10.1103/physrevb.87.045313</a>."},"intvolume":"        87","year":"2013","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7298","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public"},{"doi":"10.1103/physrevb.88.035417","title":"Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum","author":[{"first_name":"Y.","last_name":"Komijani","full_name":"Komijani, Y."},{"first_name":"T.","full_name":"Choi, T.","last_name":"Choi"},{"first_name":"F.","full_name":"Nichele, F.","last_name":"Nichele"},{"first_name":"K.","last_name":"Ensslin","full_name":"Ensslin, K."},{"last_name":"Ihn","full_name":"Ihn, T.","first_name":"T."},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."}],"date_created":"2019-01-31T11:23:27Z","volume":88,"date_updated":"2022-01-06T07:03:35Z","publisher":"American Physical Society (APS)","citation":{"ieee":"Y. Komijani <i>et al.</i>, “Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum,” <i>Physical Review B</i>, vol. 88, no. 3, 2013.","chicago":"Komijani, Y., T. Choi, F. Nichele, K. Ensslin, T. Ihn, Dirk Reuter, and A. D. Wieck. “Counting Statistics of Hole Transfer in Ap-Type GaAs Quantum Dot with Dense Excitation Spectrum.” <i>Physical Review B</i> 88, no. 3 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.035417\">https://doi.org/10.1103/physrevb.88.035417</a>.","ama":"Komijani Y, Choi T, Nichele F, et al. Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum. <i>Physical Review B</i>. 2013;88(3). doi:<a href=\"https://doi.org/10.1103/physrevb.88.035417\">10.1103/physrevb.88.035417</a>","short":"Y. Komijani, T. Choi, F. Nichele, K. Ensslin, T. Ihn, D. Reuter, A.D. Wieck, Physical Review B 88 (2013).","bibtex":"@article{Komijani_Choi_Nichele_Ensslin_Ihn_Reuter_Wieck_2013, title={Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.035417\">10.1103/physrevb.88.035417</a>}, number={3}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Komijani, Y. and Choi, T. and Nichele, F. and Ensslin, K. and Ihn, T. and Reuter, Dirk and Wieck, A. D.}, year={2013} }","mla":"Komijani, Y., et al. “Counting Statistics of Hole Transfer in Ap-Type GaAs Quantum Dot with Dense Excitation Spectrum.” <i>Physical Review B</i>, vol. 88, no. 3, American Physical Society (APS), 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.035417\">10.1103/physrevb.88.035417</a>.","apa":"Komijani, Y., Choi, T., Nichele, F., Ensslin, K., Ihn, T., Reuter, D., &#38; Wieck, A. D. (2013). Counting statistics of hole transfer in ap-type GaAs quantum dot with dense excitation spectrum. <i>Physical Review B</i>, <i>88</i>(3). <a href=\"https://doi.org/10.1103/physrevb.88.035417\">https://doi.org/10.1103/physrevb.88.035417</a>"},"intvolume":"        88","year":"2013","issue":"3","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7336","status":"public","type":"journal_article","publication":"Physical Review B"},{"user_id":"14931","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"}],"_id":"13524","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","author":[{"full_name":"Landmann, M.","last_name":"Landmann","first_name":"M."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468","last_name":"Schmidt","orcid":"0000-0002-2717-5076"},{"first_name":"Marcus","last_name":"Röppischer","full_name":"Röppischer, Marcus"},{"first_name":"Christoph","last_name":"Cobet","full_name":"Cobet, Christoph"},{"full_name":"Esser, Norbert","last_name":"Esser","first_name":"Norbert"},{"full_name":"Schupp, Thorsten","last_name":"Schupp","first_name":"Thorsten"},{"first_name":"Donat J.","last_name":"As","orcid":"0000-0003-1121-3565","id":"14","full_name":"As, Donat J."},{"first_name":"Martin","full_name":"Feneberg, Martin","last_name":"Feneberg"},{"last_name":"Goldhahn","full_name":"Goldhahn, Rüdiger","first_name":"Rüdiger"}],"date_created":"2019-09-30T14:08:49Z","volume":87,"date_updated":"2023-10-09T09:08:39Z","doi":"10.1103/physrevb.87.195210","title":"Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN","issue":"19","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"short":"M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, R. Goldhahn, Physical Review B 87 (2013).","bibtex":"@article{Landmann_Rauls_Schmidt_Röppischer_Cobet_Esser_Schupp_As_Feneberg_Goldhahn_2013, title={Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN}, volume={87}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>}, number={19}, journal={Physical Review B}, author={Landmann, M. and Rauls, E. and Schmidt, Wolf Gero and Röppischer, Marcus and Cobet, Christoph and Esser, Norbert and Schupp, Thorsten and As, Donat J. and Feneberg, Martin and Goldhahn, Rüdiger}, year={2013} }","mla":"Landmann, M., et al. “Transition Energies and Direct-Indirect Band Gap Crossing in Zinc-Blende AlxGa1−xN.” <i>Physical Review B</i>, vol. 87, no. 19, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>.","apa":"Landmann, M., Rauls, E., Schmidt, W. G., Röppischer, M., Cobet, C., Esser, N., Schupp, T., As, D. J., Feneberg, M., &#38; Goldhahn, R. (2013). Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. <i>Physical Review B</i>, <i>87</i>(19). <a href=\"https://doi.org/10.1103/physrevb.87.195210\">https://doi.org/10.1103/physrevb.87.195210</a>","ama":"Landmann M, Rauls E, Schmidt WG, et al. Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN. <i>Physical Review B</i>. 2013;87(19). doi:<a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>","ieee":"M. Landmann <i>et al.</i>, “Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1−xN,” <i>Physical Review B</i>, vol. 87, no. 19, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.87.195210\">10.1103/physrevb.87.195210</a>.","chicago":"Landmann, M., E. Rauls, Wolf Gero Schmidt, Marcus Röppischer, Christoph Cobet, Norbert Esser, Thorsten Schupp, Donat J. As, Martin Feneberg, and Rüdiger Goldhahn. “Transition Energies and Direct-Indirect Band Gap Crossing in Zinc-Blende AlxGa1−xN.” <i>Physical Review B</i> 87, no. 19 (2013). <a href=\"https://doi.org/10.1103/physrevb.87.195210\">https://doi.org/10.1103/physrevb.87.195210</a>."},"intvolume":"        87","year":"2013"},{"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13521","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","date_updated":"2025-12-05T10:30:36Z","date_created":"2019-09-30T13:54:23Z","author":[{"last_name":"Sanna","full_name":"Sanna, S.","first_name":"S."},{"last_name":"Rode","full_name":"Rode, S.","first_name":"S."},{"last_name":"Hölscher","full_name":"Hölscher, R.","first_name":"R."},{"full_name":"Klassen, S.","last_name":"Klassen","first_name":"S."},{"last_name":"Marutschke","full_name":"Marutschke, C.","first_name":"C."},{"first_name":"K.","last_name":"Kobayashi","full_name":"Kobayashi, K."},{"full_name":"Yamada, H.","last_name":"Yamada","first_name":"H."},{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"first_name":"A.","last_name":"Kühnle","full_name":"Kühnle, A."}],"volume":88,"title":"Charge compensation by long-period reconstruction in strongly polar lithium niobate surfaces","doi":"10.1103/physrevb.88.115422","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2013","citation":{"apa":"Sanna, S., Rode, S., Hölscher, R., Klassen, S., Marutschke, C., Kobayashi, K., Yamada, H., Schmidt, W. G., &#38; Kühnle, A. (2013). Charge compensation by long-period reconstruction in strongly polar lithium niobate surfaces. <i>Physical Review B</i>, <i>88</i>. <a href=\"https://doi.org/10.1103/physrevb.88.115422\">https://doi.org/10.1103/physrevb.88.115422</a>","short":"S. Sanna, S. Rode, R. Hölscher, S. Klassen, C. Marutschke, K. Kobayashi, H. Yamada, W.G. Schmidt, A. Kühnle, Physical Review B 88 (2013).","bibtex":"@article{Sanna_Rode_Hölscher_Klassen_Marutschke_Kobayashi_Yamada_Schmidt_Kühnle_2013, title={Charge compensation by long-period reconstruction in strongly polar lithium niobate surfaces}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.115422\">10.1103/physrevb.88.115422</a>}, journal={Physical Review B}, author={Sanna, S. and Rode, S. and Hölscher, R. and Klassen, S. and Marutschke, C. and Kobayashi, K. and Yamada, H. and Schmidt, Wolf Gero and Kühnle, A.}, year={2013} }","mla":"Sanna, S., et al. “Charge Compensation by Long-Period Reconstruction in Strongly Polar Lithium Niobate Surfaces.” <i>Physical Review B</i>, vol. 88, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.115422\">10.1103/physrevb.88.115422</a>.","ama":"Sanna S, Rode S, Hölscher R, et al. Charge compensation by long-period reconstruction in strongly polar lithium niobate surfaces. <i>Physical Review B</i>. 2013;88. doi:<a href=\"https://doi.org/10.1103/physrevb.88.115422\">10.1103/physrevb.88.115422</a>","chicago":"Sanna, S., S. Rode, R. Hölscher, S. Klassen, C. Marutschke, K. Kobayashi, H. Yamada, Wolf Gero Schmidt, and A. Kühnle. “Charge Compensation by Long-Period Reconstruction in Strongly Polar Lithium Niobate Surfaces.” <i>Physical Review B</i> 88 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.115422\">https://doi.org/10.1103/physrevb.88.115422</a>.","ieee":"S. Sanna <i>et al.</i>, “Charge compensation by long-period reconstruction in strongly polar lithium niobate surfaces,” <i>Physical Review B</i>, vol. 88, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.88.115422\">10.1103/physrevb.88.115422</a>."},"intvolume":"        88"},{"type":"journal_article","publication":"Physical Review B","status":"public","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"15868","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"297"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2013","citation":{"apa":"Luk, M. H., Tse, Y. C., Kwong, N. H., Leung, P. T., Lewandowski, P., Binder, R., &#38; Schumacher, S. (2013). Transverse optical instability patterns in semiconductor microcavities: Polariton scattering and low-intensity all-optical switching. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.87.205307\">https://doi.org/10.1103/physrevb.87.205307</a>","mla":"Luk, M. H., et al. “Transverse Optical Instability Patterns in Semiconductor Microcavities: Polariton Scattering and Low-Intensity All-Optical Switching.” <i>Physical Review B</i>, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.87.205307\">10.1103/physrevb.87.205307</a>.","bibtex":"@article{Luk_Tse_Kwong_Leung_Lewandowski_Binder_Schumacher_2013, title={Transverse optical instability patterns in semiconductor microcavities: Polariton scattering and low-intensity all-optical switching}, DOI={<a href=\"https://doi.org/10.1103/physrevb.87.205307\">10.1103/physrevb.87.205307</a>}, journal={Physical Review B}, author={Luk, M. H. and Tse, Y. C. and Kwong, N. H. and Leung, P. T. and Lewandowski, Przemyslaw and Binder, R. and Schumacher, Stefan}, year={2013} }","short":"M.H. Luk, Y.C. Tse, N.H. Kwong, P.T. Leung, P. Lewandowski, R. Binder, S. Schumacher, Physical Review B (2013).","ieee":"M. H. Luk <i>et al.</i>, “Transverse optical instability patterns in semiconductor microcavities: Polariton scattering and low-intensity all-optical switching,” <i>Physical Review B</i>, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.87.205307\">10.1103/physrevb.87.205307</a>.","chicago":"Luk, M. H., Y. C. Tse, N. H. Kwong, P. T. Leung, Przemyslaw Lewandowski, R. Binder, and Stefan Schumacher. “Transverse Optical Instability Patterns in Semiconductor Microcavities: Polariton Scattering and Low-Intensity All-Optical Switching.” <i>Physical Review B</i>, 2013. <a href=\"https://doi.org/10.1103/physrevb.87.205307\">https://doi.org/10.1103/physrevb.87.205307</a>.","ama":"Luk MH, Tse YC, Kwong NH, et al. Transverse optical instability patterns in semiconductor microcavities: Polariton scattering and low-intensity all-optical switching. <i>Physical Review B</i>. Published online 2013. doi:<a href=\"https://doi.org/10.1103/physrevb.87.205307\">10.1103/physrevb.87.205307</a>"},"date_updated":"2025-12-05T14:54:10Z","date_created":"2020-02-10T12:02:14Z","author":[{"first_name":"M. H.","full_name":"Luk, M. H.","last_name":"Luk"},{"first_name":"Y. C.","last_name":"Tse","full_name":"Tse, Y. C."},{"last_name":"Kwong","full_name":"Kwong, N. H.","first_name":"N. H."},{"full_name":"Leung, P. T.","last_name":"Leung","first_name":"P. T."},{"first_name":"Przemyslaw","full_name":"Lewandowski, Przemyslaw","last_name":"Lewandowski"},{"full_name":"Binder, R.","last_name":"Binder","first_name":"R."},{"last_name":"Schumacher","orcid":"0000-0003-4042-4951","full_name":"Schumacher, Stefan","id":"27271","first_name":"Stefan"}],"title":"Transverse optical instability patterns in semiconductor microcavities: Polariton scattering and low-intensity all-optical switching","doi":"10.1103/physrevb.87.205307"},{"doi":"10.1103/physrevb.88.035429","title":"Selection rules and linear absorption spectra of carbon nanotubes in axial magnetic fields","date_created":"2020-02-10T12:04:34Z","author":[{"first_name":"Hong","full_name":"Liu, Hong","last_name":"Liu"},{"first_name":"Stefan","full_name":"Schumacher, Stefan","id":"27271","orcid":"0000-0003-4042-4951","last_name":"Schumacher"},{"full_name":"Meier, Torsten","id":"344","orcid":"0000-0001-8864-2072","last_name":"Meier","first_name":"Torsten"}],"volume":88,"date_updated":"2025-12-05T14:55:03Z","citation":{"ieee":"H. Liu, S. Schumacher, and T. Meier, “Selection rules and linear absorption spectra of carbon nanotubes in axial magnetic fields,” <i>Physical Review B</i>, vol. 88, no. 3, Art. no. 035429, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.88.035429\">10.1103/physrevb.88.035429</a>.","chicago":"Liu, Hong, Stefan Schumacher, and Torsten Meier. “Selection Rules and Linear Absorption Spectra of Carbon Nanotubes in Axial Magnetic Fields.” <i>Physical Review B</i> 88, no. 3 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.035429\">https://doi.org/10.1103/physrevb.88.035429</a>.","ama":"Liu H, Schumacher S, Meier T. Selection rules and linear absorption spectra of carbon nanotubes in axial magnetic fields. <i>Physical Review B</i>. 2013;88(3). doi:<a href=\"https://doi.org/10.1103/physrevb.88.035429\">10.1103/physrevb.88.035429</a>","bibtex":"@article{Liu_Schumacher_Meier_2013, title={Selection rules and linear absorption spectra of carbon nanotubes in axial magnetic fields}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.035429\">10.1103/physrevb.88.035429</a>}, number={3035429}, journal={Physical Review B}, author={Liu, Hong and Schumacher, Stefan and Meier, Torsten}, year={2013} }","mla":"Liu, Hong, et al. “Selection Rules and Linear Absorption Spectra of Carbon Nanotubes in Axial Magnetic Fields.” <i>Physical Review B</i>, vol. 88, no. 3, 035429, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.035429\">10.1103/physrevb.88.035429</a>.","short":"H. Liu, S. Schumacher, T. Meier, Physical Review B 88 (2013).","apa":"Liu, H., Schumacher, S., &#38; Meier, T. (2013). Selection rules and linear absorption spectra of carbon nanotubes in axial magnetic fields. <i>Physical Review B</i>, <i>88</i>(3), Article 035429. <a href=\"https://doi.org/10.1103/physrevb.88.035429\">https://doi.org/10.1103/physrevb.88.035429</a>"},"intvolume":"        88","year":"2013","issue":"3","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"article_number":"035429","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"297"},{"_id":"230"},{"_id":"35"},{"_id":"27"}],"project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"},{"name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"15871","status":"public","abstract":[{"lang":"eng","text":"We derive a transparent and easy-to-use analytic expression for the selection rules and the optical dipole matrix elements for carbon nanotubes of arbitrary chirality in the presence of axial magnetic fields using a single-orbital π-electron tight-binding model. From this, we calculate the linear absorption spectrum for arbitrary polarization directions of the incident light, providing insight into all optically allowed transition. We show that the transverse absorption peaks can be selectively excited with circularly polarized light and spectrally resolved in an axial magnetic field."}],"type":"journal_article","publication":"Physical Review B"},{"doi":"10.1103/physrevb.88.165204","title":"Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative  χ(3)  limit","date_created":"2021-08-06T08:57:39Z","author":[{"first_name":"E.","last_name":"Sternemann","full_name":"Sternemann, E."},{"last_name":"Jostmeier","full_name":"Jostmeier, T.","first_name":"T."},{"first_name":"C.","last_name":"Ruppert","full_name":"Ruppert, C."},{"first_name":"H. T.","last_name":"Duc","full_name":"Duc, H. T."},{"orcid":"0000-0001-8864-2072","last_name":"Meier","id":"344","full_name":"Meier, Torsten","first_name":"Torsten"},{"first_name":"M.","last_name":"Betz","full_name":"Betz, M."}],"volume":88,"date_updated":"2025-12-16T11:37:58Z","citation":{"ieee":"E. Sternemann, T. Jostmeier, C. Ruppert, H. T. Duc, T. Meier, and M. Betz, “Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative  χ(3)  limit,” <i>Physical Review B</i>, vol. 88, no. 16, Art. no. 165204, 2013, doi: <a href=\"https://doi.org/10.1103/physrevb.88.165204\">10.1103/physrevb.88.165204</a>.","chicago":"Sternemann, E., T. Jostmeier, C. Ruppert, H. T. Duc, Torsten Meier, and M. Betz. “Femtosecond Quantum Interference Control of Electrical Currents in GaAs: Signatures beyond the Perturbative  χ(3)  Limit.” <i>Physical Review B</i> 88, no. 16 (2013). <a href=\"https://doi.org/10.1103/physrevb.88.165204\">https://doi.org/10.1103/physrevb.88.165204</a>.","ama":"Sternemann E, Jostmeier T, Ruppert C, Duc HT, Meier T, Betz M. Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative  χ(3)  limit. <i>Physical Review B</i>. 2013;88(16). doi:<a href=\"https://doi.org/10.1103/physrevb.88.165204\">10.1103/physrevb.88.165204</a>","apa":"Sternemann, E., Jostmeier, T., Ruppert, C., Duc, H. T., Meier, T., &#38; Betz, M. (2013). Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative  χ(3)  limit. <i>Physical Review B</i>, <i>88</i>(16), Article 165204. <a href=\"https://doi.org/10.1103/physrevb.88.165204\">https://doi.org/10.1103/physrevb.88.165204</a>","mla":"Sternemann, E., et al. “Femtosecond Quantum Interference Control of Electrical Currents in GaAs: Signatures beyond the Perturbative  χ(3)  Limit.” <i>Physical Review B</i>, vol. 88, no. 16, 165204, 2013, doi:<a href=\"https://doi.org/10.1103/physrevb.88.165204\">10.1103/physrevb.88.165204</a>.","short":"E. Sternemann, T. Jostmeier, C. Ruppert, H.T. Duc, T. Meier, M. Betz, Physical Review B 88 (2013).","bibtex":"@article{Sternemann_Jostmeier_Ruppert_Duc_Meier_Betz_2013, title={Femtosecond quantum interference control of electrical currents in GaAs: Signatures beyond the perturbative  χ(3)  limit}, volume={88}, DOI={<a href=\"https://doi.org/10.1103/physrevb.88.165204\">10.1103/physrevb.88.165204</a>}, number={16165204}, journal={Physical Review B}, author={Sternemann, E. and Jostmeier, T. and Ruppert, C. and Duc, H. T. and Meier, Torsten and Betz, M.}, year={2013} }"},"intvolume":"        88","year":"2013","issue":"16","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"language":[{"iso":"eng"}],"article_number":"165204","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"293"},{"_id":"230"},{"_id":"35"}],"_id":"22952","status":"public","type":"journal_article","publication":"Physical Review B"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"_id":"7300","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2012","intvolume":"        86","citation":{"ieee":"A. M. Burke <i>et al.</i>, “Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures,” <i>Physical Review B</i>, vol. 86, no. 16, 2012.","chicago":"Burke, A. M., D. E. J. Waddington, D. J. Carrad, R. W. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, et al. “Origin of Gate Hysteresis Inp-Type Si-Doped AlGaAs/GaAs Heterostructures.” <i>Physical Review B</i> 86, no. 16 (2012). <a href=\"https://doi.org/10.1103/physrevb.86.165309\">https://doi.org/10.1103/physrevb.86.165309</a>.","ama":"Burke AM, Waddington DEJ, Carrad DJ, et al. Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures. <i>Physical Review B</i>. 2012;86(16). doi:<a href=\"https://doi.org/10.1103/physrevb.86.165309\">10.1103/physrevb.86.165309</a>","short":"A.M. Burke, D.E.J. Waddington, D.J. Carrad, R.W. Lyttleton, H.H. Tan, P.J. Reece, O. Klochan, A.R. Hamilton, A. Rai, D. Reuter, A.D. Wieck, A.P. Micolich, Physical Review B 86 (2012).","mla":"Burke, A. M., et al. “Origin of Gate Hysteresis Inp-Type Si-Doped AlGaAs/GaAs Heterostructures.” <i>Physical Review B</i>, vol. 86, no. 16, American Physical Society (APS), 2012, doi:<a href=\"https://doi.org/10.1103/physrevb.86.165309\">10.1103/physrevb.86.165309</a>.","bibtex":"@article{Burke_Waddington_Carrad_Lyttleton_Tan_Reece_Klochan_Hamilton_Rai_Reuter_et al._2012, title={Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures}, volume={86}, DOI={<a href=\"https://doi.org/10.1103/physrevb.86.165309\">10.1103/physrevb.86.165309</a>}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Burke, A. M. and Waddington, D. E. J. and Carrad, D. J. and Lyttleton, R. W. and Tan, H. H. and Reece, P. J. and Klochan, O. and Hamilton, A. R. and Rai, A. and Reuter, Dirk and et al.}, year={2012} }","apa":"Burke, A. M., Waddington, D. E. J., Carrad, D. J., Lyttleton, R. W., Tan, H. H., Reece, P. J., … Micolich, A. P. (2012). Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures. <i>Physical Review B</i>, <i>86</i>(16). <a href=\"https://doi.org/10.1103/physrevb.86.165309\">https://doi.org/10.1103/physrevb.86.165309</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"16","title":"Origin of gate hysteresis inp-type Si-doped AlGaAs/GaAs heterostructures","doi":"10.1103/physrevb.86.165309","date_updated":"2022-01-06T07:03:33Z","publisher":"American Physical Society (APS)","volume":86,"date_created":"2019-01-31T09:04:16Z","author":[{"first_name":"A. M.","full_name":"Burke, A. M.","last_name":"Burke"},{"full_name":"Waddington, D. E. J.","last_name":"Waddington","first_name":"D. E. J."},{"last_name":"Carrad","full_name":"Carrad, D. J.","first_name":"D. J."},{"first_name":"R. W.","last_name":"Lyttleton","full_name":"Lyttleton, R. W."},{"first_name":"H. H.","full_name":"Tan, H. H.","last_name":"Tan"},{"full_name":"Reece, P. J.","last_name":"Reece","first_name":"P. J."},{"first_name":"O.","last_name":"Klochan","full_name":"Klochan, O."},{"first_name":"A. R.","full_name":"Hamilton, A. R.","last_name":"Hamilton"},{"last_name":"Rai","full_name":"Rai, A.","first_name":"A."},{"full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter","first_name":"Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"last_name":"Micolich","full_name":"Micolich, A. P.","first_name":"A. P."}]}]