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Rode <i>et al.</i>, “Atomic-resolution imaging of the polar (0001¯) surface of LiNbO3in aqueous solution by frequency modulation atomic force microscopy,” <i>Physical Review B</i>, vol. 86, no. 7, 2012, doi: <a href=\"https://doi.org/10.1103/physrevb.86.075468\">10.1103/physrevb.86.075468</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"7","language":[{"iso":"eng"}],"_id":"13539","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","status":"public","publication":"Physical Review B","type":"journal_article"},{"_id":"13541","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","status":"public","date_updated":"2025-12-05T10:46:28Z","volume":86,"author":[{"first_name":"M.","last_name":"Landmann","full_name":"Landmann, M."},{"full_name":"Köhler, T.","last_name":"Köhler","first_name":"T."},{"first_name":"S.","full_name":"Köppen, S.","last_name":"Köppen"},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."},{"full_name":"Frauenheim, T.","last_name":"Frauenheim","first_name":"T."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"}],"date_created":"2019-09-30T14:44:41Z","title":"Fingerprints of order and disorder in the electronic and optical properties of crystalline and amorphous TiO2","doi":"10.1103/physrevb.86.064201","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"6","year":"2012","intvolume":"        86","citation":{"ama":"Landmann M, Köhler T, Köppen S, Rauls E, Frauenheim T, Schmidt WG. 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Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration. <i>Physical Review B</i>, <i>84</i>(11). <a href=\"https://doi.org/10.1103/physrevb.84.115309\">https://doi.org/10.1103/physrevb.84.115309</a>","ama":"Spatzek S, Varwig S, Glazov MM, et al. Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration. <i>Physical Review B</i>. 2011;84(11). doi:<a href=\"https://doi.org/10.1103/physrevb.84.115309\">10.1103/physrevb.84.115309</a>","chicago":"Spatzek, S., S. Varwig, M. M. Glazov, I. A. Yugova, A. Schwan, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Generation and Detection of Mode-Locked Spin Coherence in (In,Ga)As/GaAs Quantum Dots by Laser Pulses of Long Duration.” <i>Physical Review B</i> 84, no. 11 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.115309\">https://doi.org/10.1103/physrevb.84.115309</a>.","ieee":"S. Spatzek <i>et al.</i>, “Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration,” <i>Physical Review B</i>, vol. 84, no. 11, 2011."},"intvolume":"        84","year":"2011","issue":"11","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"doi":"10.1103/physrevb.84.115309","title":"Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration","author":[{"first_name":"S.","last_name":"Spatzek","full_name":"Spatzek, S."},{"last_name":"Varwig","full_name":"Varwig, S.","first_name":"S."},{"first_name":"M. M.","full_name":"Glazov, M. M.","last_name":"Glazov"},{"first_name":"I. A.","full_name":"Yugova, I. A.","last_name":"Yugova"},{"full_name":"Schwan, A.","last_name":"Schwan","first_name":"A."},{"first_name":"D. R.","full_name":"Yakovlev, D. R.","last_name":"Yakovlev"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, A. D.","last_name":"Wieck","first_name":"A. D."},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."}],"date_created":"2019-02-14T09:46:10Z","volume":84,"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:44Z"},{"year":"2011","intvolume":"        84","citation":{"chicago":"Notthoff, Christian, Dirk Reuter, Andreas D. Wieck, and Axel Lorke. “Edge-Induced Magnetoplasmon Excitation in a Two-Dimensional Electron Gas under Quantum Hall Conditions.” <i>Physical Review B</i> 84, no. 3 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.035311\">https://doi.org/10.1103/physrevb.84.035311</a>.","ieee":"C. Notthoff, D. Reuter, A. D. Wieck, and A. Lorke, “Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions,” <i>Physical Review B</i>, vol. 84, no. 3, 2011.","ama":"Notthoff C, Reuter D, Wieck AD, Lorke A. Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions. <i>Physical Review B</i>. 2011;84(3). doi:<a href=\"https://doi.org/10.1103/physrevb.84.035311\">10.1103/physrevb.84.035311</a>","bibtex":"@article{Notthoff_Reuter_Wieck_Lorke_2011, title={Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.035311\">10.1103/physrevb.84.035311</a>}, number={3}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Notthoff, Christian and Reuter, Dirk and Wieck, Andreas D. and Lorke, Axel}, year={2011} }","short":"C. Notthoff, D. Reuter, A.D. Wieck, A. Lorke, Physical Review B 84 (2011).","mla":"Notthoff, Christian, et al. “Edge-Induced Magnetoplasmon Excitation in a Two-Dimensional Electron Gas under Quantum Hall Conditions.” <i>Physical Review B</i>, vol. 84, no. 3, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.035311\">10.1103/physrevb.84.035311</a>.","apa":"Notthoff, C., Reuter, D., Wieck, A. D., &#38; Lorke, A. (2011). Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions. <i>Physical Review B</i>, <i>84</i>(3). <a href=\"https://doi.org/10.1103/physrevb.84.035311\">https://doi.org/10.1103/physrevb.84.035311</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"3","title":"Edge-induced magnetoplasmon excitation in a two-dimensional electron gas under quantum Hall conditions","doi":"10.1103/physrevb.84.035311","date_updated":"2022-01-06T07:03:44Z","publisher":"American Physical Society (APS)","volume":84,"date_created":"2019-02-14T09:47:00Z","author":[{"last_name":"Notthoff","full_name":"Notthoff, Christian","first_name":"Christian"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"first_name":"Axel","full_name":"Lorke, Axel","last_name":"Lorke"}],"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"_id":"7703","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7704","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","date_created":"2019-02-14T09:47:43Z","author":[{"first_name":"R. V.","full_name":"Cherbunin, R. V.","last_name":"Cherbunin"},{"first_name":"K.","last_name":"Flisinski","full_name":"Flisinski, K."},{"first_name":"I. Ya.","full_name":"Gerlovin, I. Ya.","last_name":"Gerlovin"},{"full_name":"Ignatiev, I. V.","last_name":"Ignatiev","first_name":"I. V."},{"last_name":"Kuznetsova","full_name":"Kuznetsova, M. S.","first_name":"M. S."},{"first_name":"M. Yu.","full_name":"Petrov, M. Yu.","last_name":"Petrov"},{"first_name":"D. R.","last_name":"Yakovlev","full_name":"Yakovlev, D. R."},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"first_name":"A. D.","last_name":"Wieck","full_name":"Wieck, A. D."},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."}],"volume":84,"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:44Z","doi":"10.1103/physrevb.84.041304","title":"Resonant nuclear spin pumping in (In,Ga)As quantum dots","issue":"4","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"short":"R.V. Cherbunin, K. Flisinski, I.Y. Gerlovin, I.V. Ignatiev, M.S. Kuznetsova, M.Y. Petrov, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physical Review B 84 (2011).","bibtex":"@article{Cherbunin_Flisinski_Gerlovin_Ignatiev_Kuznetsova_Petrov_Yakovlev_Reuter_Wieck_Bayer_2011, title={Resonant nuclear spin pumping in (In,Ga)As quantum dots}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.041304\">10.1103/physrevb.84.041304</a>}, number={4}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Cherbunin, R. V. and Flisinski, K. and Gerlovin, I. Ya. and Ignatiev, I. V. and Kuznetsova, M. S. and Petrov, M. Yu. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2011} }","mla":"Cherbunin, R. V., et al. “Resonant Nuclear Spin Pumping in (In,Ga)As Quantum Dots.” <i>Physical Review B</i>, vol. 84, no. 4, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.041304\">10.1103/physrevb.84.041304</a>.","apa":"Cherbunin, R. V., Flisinski, K., Gerlovin, I. Y., Ignatiev, I. V., Kuznetsova, M. S., Petrov, M. Y., … Bayer, M. (2011). Resonant nuclear spin pumping in (In,Ga)As quantum dots. <i>Physical Review B</i>, <i>84</i>(4). <a href=\"https://doi.org/10.1103/physrevb.84.041304\">https://doi.org/10.1103/physrevb.84.041304</a>","chicago":"Cherbunin, R. V., K. Flisinski, I. Ya. Gerlovin, I. V. Ignatiev, M. S. Kuznetsova, M. Yu. Petrov, D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Resonant Nuclear Spin Pumping in (In,Ga)As Quantum Dots.” <i>Physical Review B</i> 84, no. 4 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.041304\">https://doi.org/10.1103/physrevb.84.041304</a>.","ieee":"R. V. Cherbunin <i>et al.</i>, “Resonant nuclear spin pumping in (In,Ga)As quantum dots,” <i>Physical Review B</i>, vol. 84, no. 4, 2011.","ama":"Cherbunin RV, Flisinski K, Gerlovin IY, et al. Resonant nuclear spin pumping in (In,Ga)As quantum dots. <i>Physical Review B</i>. 2011;84(4). doi:<a href=\"https://doi.org/10.1103/physrevb.84.041304\">10.1103/physrevb.84.041304</a>"},"intvolume":"        84","year":"2011"},{"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7707","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","author":[{"last_name":"Schinner","full_name":"Schinner, G. J.","first_name":"G. J."},{"full_name":"Schubert, E.","last_name":"Schubert","first_name":"E."},{"last_name":"Stallhofer","full_name":"Stallhofer, M. P.","first_name":"M. P."},{"last_name":"Kotthaus","full_name":"Kotthaus, J. P.","first_name":"J. P."},{"first_name":"D.","last_name":"Schuh","full_name":"Schuh, D."},{"full_name":"Rai, A. K.","last_name":"Rai","first_name":"A. K."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"full_name":"Govorov, A. O.","last_name":"Govorov","first_name":"A. O."}],"date_created":"2019-02-14T10:24:24Z","volume":83,"publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:45Z","doi":"10.1103/physrevb.83.165308","title":"Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells","issue":"16","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"bibtex":"@article{Schinner_Schubert_Stallhofer_Kotthaus_Schuh_Rai_Reuter_Wieck_Govorov_2011, title={Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.165308\">10.1103/physrevb.83.165308</a>}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Schinner, G. J. and Schubert, E. and Stallhofer, M. P. and Kotthaus, J. P. and Schuh, D. and Rai, A. K. and Reuter, Dirk and Wieck, A. D. and Govorov, A. O.}, year={2011} }","short":"G.J. Schinner, E. Schubert, M.P. Stallhofer, J.P. Kotthaus, D. Schuh, A.K. Rai, D. Reuter, A.D. Wieck, A.O. Govorov, Physical Review B 83 (2011).","mla":"Schinner, G. J., et al. “Electrostatically Trapping Indirect Excitons in Coupled InxGa1−xAs Quantum Wells.” <i>Physical Review B</i>, vol. 83, no. 16, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.165308\">10.1103/physrevb.83.165308</a>.","apa":"Schinner, G. J., Schubert, E., Stallhofer, M. P., Kotthaus, J. P., Schuh, D., Rai, A. K., … Govorov, A. O. (2011). Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells. <i>Physical Review B</i>, <i>83</i>(16). <a href=\"https://doi.org/10.1103/physrevb.83.165308\">https://doi.org/10.1103/physrevb.83.165308</a>","ama":"Schinner GJ, Schubert E, Stallhofer MP, et al. Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells. <i>Physical Review B</i>. 2011;83(16). doi:<a href=\"https://doi.org/10.1103/physrevb.83.165308\">10.1103/physrevb.83.165308</a>","ieee":"G. J. Schinner <i>et al.</i>, “Electrostatically trapping indirect excitons in coupled InxGa1−xAs quantum wells,” <i>Physical Review B</i>, vol. 83, no. 16, 2011.","chicago":"Schinner, G. J., E. Schubert, M. P. Stallhofer, J. P. Kotthaus, D. Schuh, A. K. Rai, Dirk Reuter, A. D. Wieck, and A. O. Govorov. “Electrostatically Trapping Indirect Excitons in Coupled InxGa1−xAs Quantum Wells.” <i>Physical Review B</i> 83, no. 16 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.165308\">https://doi.org/10.1103/physrevb.83.165308</a>."},"intvolume":"        83","year":"2011"},{"intvolume":"        84","citation":{"ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2011). Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>, <i>84</i>(6). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6064126}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","mla":"Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","publication_status":"published","doi":"10.1103/physrevb.84.064126","date_updated":"2022-01-06T07:00:26Z","volume":84,"author":[{"first_name":"F.","full_name":"Zirkelbach, F.","last_name":"Zirkelbach"},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."},{"full_name":"Nordlund, K.","last_name":"Nordlund","first_name":"K."},{"last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797","first_name":"Jörg"},{"first_name":"W. G.","last_name":"Schmidt","full_name":"Schmidt, W. G."},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."}],"status":"public","type":"journal_article","article_type":"original","article_number":"064126","file_date_updated":"2018-08-27T13:18:53Z","_id":"4150","department":[{"_id":"15"},{"_id":"286"}],"user_id":"55706","year":"2011","issue":"6","title":"Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon","publisher":"American Physical Society (APS)","date_created":"2018-08-27T13:17:45Z","abstract":[{"lang":"eng","text":"Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and\r\nfirst-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation process are calculated in feasible systems of small\r\nsize. The migration mechanism of a carbon \u0002100\u0003 interstitial and silicon \u000211 0\u0003 self-interstitial in otherwise\r\ndefect-free silicon are investigated using density functional theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated systematically. Interactions of various combinations of defects have been characterized including a\r\ncouple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend\r\nto agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range\r\ncapture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A\r\nrather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to\r\nexperimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects\r\nand carbon diffusion in silicon are compared to results of classical potential simulations revealing significant\r\nlimitations of the latter method. An approach to work around this problem is proposed. Finally, results of the\r\nclassical potential molecular dynamics simulations of large systems are examined, which reinforce previous\r\nassumptions and give further insight into basic processes involved in the silicon carbide transition."}],"file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":1541698,"access_level":"closed","file_name":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon.pdf","file_id":"4151","date_updated":"2018-08-27T13:18:53Z","date_created":"2018-08-27T13:18:53Z","creator":"hclaudia"}],"publication":"Physical Review B","ddc":["530"],"language":[{"iso":"eng"}]},{"date_updated":"2022-01-06T06:53:06Z","publisher":"American Physical Society (APS)","date_created":"2018-03-23T12:26:16Z","author":[{"full_name":"Utikal, Tobias","last_name":"Utikal","first_name":"Tobias"},{"first_name":"Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","full_name":"Zentgraf, Thomas","id":"30525"},{"last_name":"Tikhodeev","full_name":"Tikhodeev, Sergei G.","first_name":"Sergei G."},{"last_name":"Lippitz","full_name":"Lippitz, Markus","first_name":"Markus"},{"full_name":"Giessen, Harald","last_name":"Giessen","first_name":"Harald"}],"volume":84,"title":"Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices","doi":"10.1103/physrevb.84.075101","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"7","year":"2011","citation":{"ama":"Utikal T, Zentgraf T, Tikhodeev SG, Lippitz M, Giessen H. Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices. <i>Physical Review B</i>. 2011;84(7). doi:<a href=\"https://doi.org/10.1103/physrevb.84.075101\">10.1103/physrevb.84.075101</a>","chicago":"Utikal, Tobias, Thomas Zentgraf, Sergei G. Tikhodeev, Markus Lippitz, and Harald Giessen. “Tailoring the Photonic Band Splitting in Metallodielectric Photonic Crystal Superlattices.” <i>Physical Review B</i> 84, no. 7 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.075101\">https://doi.org/10.1103/physrevb.84.075101</a>.","ieee":"T. Utikal, T. Zentgraf, S. G. Tikhodeev, M. Lippitz, and H. Giessen, “Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices,” <i>Physical Review B</i>, vol. 84, no. 7, 2011.","apa":"Utikal, T., Zentgraf, T., Tikhodeev, S. G., Lippitz, M., &#38; Giessen, H. (2011). Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices. <i>Physical Review B</i>, <i>84</i>(7). <a href=\"https://doi.org/10.1103/physrevb.84.075101\">https://doi.org/10.1103/physrevb.84.075101</a>","mla":"Utikal, Tobias, et al. “Tailoring the Photonic Band Splitting in Metallodielectric Photonic Crystal Superlattices.” <i>Physical Review B</i>, vol. 84, no. 7, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.075101\">10.1103/physrevb.84.075101</a>.","bibtex":"@article{Utikal_Zentgraf_Tikhodeev_Lippitz_Giessen_2011, title={Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.075101\">10.1103/physrevb.84.075101</a>}, number={7}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Utikal, Tobias and Zentgraf, Thomas and Tikhodeev, Sergei G. and Lippitz, Markus and Giessen, Harald}, year={2011} }","short":"T. Utikal, T. Zentgraf, S.G. Tikhodeev, M. Lippitz, H. Giessen, Physical Review B 84 (2011)."},"intvolume":"        84","_id":"1723","user_id":"30525","department":[{"_id":"15"},{"_id":"230"}],"type":"journal_article","publication":"Physical Review B","status":"public"},{"language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"284"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13568","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"status":"public","publication":"Physical Review B","type":"journal_article","doi":"10.1103/physrevb.83.195301","title":"Band offsets in cubic GaN/AlN superlattices","volume":83,"date_created":"2019-10-01T09:11:23Z","author":[{"first_name":"C.","full_name":"Mietze, C.","last_name":"Mietze"},{"first_name":"M.","full_name":"Landmann, M.","last_name":"Landmann"},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"},{"last_name":"Machhadani","full_name":"Machhadani, H.","first_name":"H."},{"first_name":"S.","full_name":"Sakr, S.","last_name":"Sakr"},{"full_name":"Tchernycheva, M.","last_name":"Tchernycheva","first_name":"M."},{"last_name":"Julien","full_name":"Julien, F. H.","first_name":"F. H."},{"orcid":"0000-0002-2717-5076","last_name":"Schmidt","full_name":"Schmidt, Wolf Gero","id":"468","first_name":"Wolf Gero"},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"first_name":"Donat Josef","id":"14","full_name":"As, Donat Josef","orcid":"0000-0003-1121-3565","last_name":"As"}],"date_updated":"2025-12-05T10:41:18Z","intvolume":"        83","citation":{"apa":"Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva, M., Julien, F. H., Schmidt, W. G., Lischka, K., &#38; As, D. J. (2011). Band offsets in cubic GaN/AlN superlattices. <i>Physical Review B</i>, <i>83</i>(19). <a href=\"https://doi.org/10.1103/physrevb.83.195301\">https://doi.org/10.1103/physrevb.83.195301</a>","mla":"Mietze, C., et al. “Band Offsets in Cubic GaN/AlN Superlattices.” <i>Physical Review B</i>, vol. 83, no. 19, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>.","bibtex":"@article{Mietze_Landmann_Rauls_Machhadani_Sakr_Tchernycheva_Julien_Schmidt_Lischka_As_2011, title={Band offsets in cubic GaN/AlN superlattices}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>}, number={19}, journal={Physical Review B}, author={Mietze, C. and Landmann, M. and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien, F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}, year={2011} }","short":"C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).","ama":"Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices. <i>Physical Review B</i>. 2011;83(19). doi:<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>","chicago":"Mietze, C., M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F. H. Julien, Wolf Gero Schmidt, K. Lischka, and Donat Josef As. “Band Offsets in Cubic GaN/AlN Superlattices.” <i>Physical Review B</i> 83, no. 19 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.195301\">https://doi.org/10.1103/physrevb.83.195301</a>.","ieee":"C. Mietze <i>et al.</i>, “Band offsets in cubic GaN/AlN superlattices,” <i>Physical Review B</i>, vol. 83, no. 19, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>."},"year":"2011","issue":"19","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published"},{"title":"Asymmetric saddling of single porphyrin molecules on Au(111)","doi":"10.1103/physrevb.83.165416","date_updated":"2025-12-05T10:40:33Z","author":[{"full_name":"Müllegger, S.","last_name":"Müllegger","first_name":"S."},{"first_name":"M.","last_name":"Rashidi","full_name":"Rashidi, M."},{"first_name":"T.","full_name":"Lengauer, T.","last_name":"Lengauer"},{"first_name":"E.","last_name":"Rauls","full_name":"Rauls, E."},{"first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero"},{"full_name":"Knör, G.","last_name":"Knör","first_name":"G."},{"full_name":"Schöfberger, W.","last_name":"Schöfberger","first_name":"W."},{"first_name":"R.","last_name":"Koch","full_name":"Koch, R."}],"date_created":"2019-10-01T09:15:39Z","volume":83,"year":"2011","citation":{"bibtex":"@article{Müllegger_Rashidi_Lengauer_Rauls_Schmidt_Knör_Schöfberger_Koch_2011, title={Asymmetric saddling of single porphyrin molecules on Au(111)}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>}, number={16}, journal={Physical Review B}, author={Müllegger, S. and Rashidi, M. and Lengauer, T. and Rauls, E. and Schmidt, Wolf Gero and Knör, G. and Schöfberger, W. and Koch, R.}, year={2011} }","short":"S. Müllegger, M. Rashidi, T. Lengauer, E. Rauls, W.G. Schmidt, G. Knör, W. Schöfberger, R. Koch, Physical Review B 83 (2011).","mla":"Müllegger, S., et al. “Asymmetric Saddling of Single Porphyrin Molecules on Au(111).” <i>Physical Review B</i>, vol. 83, no. 16, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>.","apa":"Müllegger, S., Rashidi, M., Lengauer, T., Rauls, E., Schmidt, W. G., Knör, G., Schöfberger, W., &#38; Koch, R. (2011). Asymmetric saddling of single porphyrin molecules on Au(111). <i>Physical Review B</i>, <i>83</i>(16). <a href=\"https://doi.org/10.1103/physrevb.83.165416\">https://doi.org/10.1103/physrevb.83.165416</a>","chicago":"Müllegger, S., M. Rashidi, T. Lengauer, E. Rauls, Wolf Gero Schmidt, G. Knör, W. Schöfberger, and R. Koch. “Asymmetric Saddling of Single Porphyrin Molecules on Au(111).” <i>Physical Review B</i> 83, no. 16 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.165416\">https://doi.org/10.1103/physrevb.83.165416</a>.","ieee":"S. Müllegger <i>et al.</i>, “Asymmetric saddling of single porphyrin molecules on Au(111),” <i>Physical Review B</i>, vol. 83, no. 16, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>.","ama":"Müllegger S, Rashidi M, Lengauer T, et al. Asymmetric saddling of single porphyrin molecules on Au(111). <i>Physical Review B</i>. 2011;83(16). doi:<a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>"},"intvolume":"        83","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"16","language":[{"iso":"eng"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13570","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"status":"public","type":"journal_article","publication":"Physical Review B"},{"volume":84,"author":[{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"last_name":"Babilon","full_name":"Babilon, M.","first_name":"M."},{"first_name":"C.","full_name":"Thierfelder, C.","last_name":"Thierfelder"},{"first_name":"S.","full_name":"Sanna, S.","last_name":"Sanna"},{"full_name":"Wippermann, S.","last_name":"Wippermann","first_name":"S."}],"date_created":"2019-10-01T09:01:58Z","date_updated":"2025-12-05T10:43:19Z","doi":"10.1103/physrevb.84.115416","title":"Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array","issue":"11","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        84","citation":{"ama":"Schmidt WG, Babilon M, Thierfelder C, Sanna S, Wippermann S. Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array. <i>Physical Review B</i>. 2011;84(11). doi:<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>","chicago":"Schmidt, Wolf Gero, M. Babilon, C. Thierfelder, S. Sanna, and S. Wippermann. “Influence of Na Adsorption on the Quantum Conductance and Metal-Insulator Transition of the In-Si(111)(4×1)–(8×2) Nanowire Array.” <i>Physical Review B</i> 84, no. 11 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.115416\">https://doi.org/10.1103/physrevb.84.115416</a>.","ieee":"W. G. Schmidt, M. Babilon, C. Thierfelder, S. Sanna, and S. Wippermann, “Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array,” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>.","apa":"Schmidt, W. G., Babilon, M., Thierfelder, C., Sanna, S., &#38; Wippermann, S. (2011). Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array. <i>Physical Review B</i>, <i>84</i>(11). <a href=\"https://doi.org/10.1103/physrevb.84.115416\">https://doi.org/10.1103/physrevb.84.115416</a>","bibtex":"@article{Schmidt_Babilon_Thierfelder_Sanna_Wippermann_2011, title={Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>}, number={11}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Babilon, M. and Thierfelder, C. and Sanna, S. and Wippermann, S.}, year={2011} }","short":"W.G. Schmidt, M. Babilon, C. Thierfelder, S. Sanna, S. Wippermann, Physical Review B 84 (2011).","mla":"Schmidt, Wolf Gero, et al. “Influence of Na Adsorption on the Quantum Conductance and Metal-Insulator Transition of the In-Si(111)(4×1)–(8×2) Nanowire Array.” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>."},"year":"2011","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13563","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"language":[{"iso":"eng"}],"publication":"Physical Review B","type":"journal_article","status":"public"},{"user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13564","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public","date_created":"2019-10-01T09:03:18Z","author":[{"full_name":"dos Santos, L. 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S., et al. “Group-VII Point Defects in ZnSe.” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>.","bibtex":"@article{dos Santos_Schmidt_Rauls_2011, title={Group-VII point defects in ZnSe}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>}, number={11}, journal={Physical Review B}, author={dos Santos, L. S. and Schmidt, Wolf Gero and Rauls, E.}, year={2011} }","ieee":"L. S. dos Santos, W. G. Schmidt, and E. Rauls, “Group-VII point defects in ZnSe,” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>.","chicago":"Santos, L. S. dos, Wolf Gero Schmidt, and E. 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Schmidt, Physical Review B 83 (2011).","ieee":"S. Sanna, C. Thierfelder, S. Wippermann, T. P. Sinha, and W. G. Schmidt, “Barium titanate ground- and excited-state properties from first-principles calculations,” <i>Physical Review B</i>, vol. 83, no. 5, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.054112\">10.1103/physrevb.83.054112</a>.","chicago":"Sanna, S., C. Thierfelder, S. Wippermann, T. P. Sinha, and Wolf Gero Schmidt. “Barium Titanate Ground- and Excited-State Properties from First-Principles Calculations.” <i>Physical Review B</i> 83, no. 5 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.054112\">https://doi.org/10.1103/physrevb.83.054112</a>.","ama":"Sanna S, Thierfelder C, Wippermann S, Sinha TP, Schmidt WG. 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Rauls, Physical Review B 84 (2011).","mla":"Zirkelbach, F., et al. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2011} }","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., &#38; Rauls, E. (2011). Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>, <i>84</i>(6). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"6","title":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon","doi":"10.1103/physrevb.84.064126","date_updated":"2025-12-16T07:51:00Z","volume":84,"author":[{"full_name":"Zirkelbach, F.","last_name":"Zirkelbach","first_name":"F."},{"full_name":"Stritzker, B.","last_name":"Stritzker","first_name":"B."},{"full_name":"Nordlund, K.","last_name":"Nordlund","first_name":"K."},{"last_name":"Lindner","full_name":"Lindner, J. K. N.","first_name":"J. K. N."},{"full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"}],"date_created":"2019-10-15T07:16:32Z"},{"publication":"Physical Review B","file":[{"access_level":"open_access","file_id":"4047","file_name":"2011 Hübner,Kunz,Örtel,Schuh,Pochwala,Duc,Förstner,Meier,Östreich_Electron g -factor anisotropy in symmetric (110)-oriented GaAs quantum wells.pdf","file_size":339595,"creator":"hclaudia","date_created":"2018-08-22T10:22:40Z","date_updated":"2018-09-04T19:28:55Z","relation":"main_file","content_type":"application/pdf"}],"abstract":[{"text":"We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs\r\nsingle quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane\r\nelectron Land´e g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus\r\nsplitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure\r\nhigher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are\r\nvery well described within 14 × 14 band k·p theory and illustrate that the electron spin is an excellent meter\r\nvariable for mapping out the internal—otherwise hidden—symmetries in two-dimensional systems. Fourth-order\r\nperturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a\r\nqualitative understanding of the observed effects.","lang":"eng"}],"language":[{"iso":"eng"}],"keyword":["tet_topic_qw"],"ddc":["530"],"issue":"4","year":"2011","date_created":"2018-08-22T10:20:23Z","publisher":"American Physical Society (APS)","title":"Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells","type":"journal_article","status":"public","urn":"40467","department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"user_id":"16199","_id":"4046","file_date_updated":"2018-09-04T19:28:55Z","article_type":"original","has_accepted_license":"1","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        84","page":"041301(R)","citation":{"ieee":"J. Hübner <i>et al.</i>, “Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells,” <i>Physical Review B</i>, vol. 84, no. 4, p. 041301(R), 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>.","chicago":"Hübner, J., S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, Jens Förstner, Torsten Meier, and M. Oestreich. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented GaAs Quantum Wells.” <i>Physical Review B</i> 84, no. 4 (2011): 041301(R). <a href=\"https://doi.org/10.1103/physrevb.84.041301\">https://doi.org/10.1103/physrevb.84.041301</a>.","ama":"Hübner J, Kunz S, Oertel S, et al. Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. <i>Physical Review B</i>. 2011;84(4):041301(R). doi:<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>","bibtex":"@article{Hübner_Kunz_Oertel_Schuh_Pochwała_Duc_Förstner_Meier_Oestreich_2011, title={Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>}, number={4}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Hübner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwała, M. and Duc, H. T. and Förstner, Jens and Meier, Torsten and Oestreich, M.}, year={2011}, pages={041301(R)} }","short":"J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H.T. Duc, J. Förstner, T. Meier, M. Oestreich, Physical Review B 84 (2011) 041301(R).","mla":"Hübner, J., et al. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 84, no. 4, American Physical Society (APS), 2011, p. 041301(R), doi:<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>.","apa":"Hübner, J., Kunz, S., Oertel, S., Schuh, D., Pochwała, M., Duc, H. T., Förstner, J., Meier, T., &#38; Oestreich, M. (2011). Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. <i>Physical Review B</i>, <i>84</i>(4), 041301(R). <a href=\"https://doi.org/10.1103/physrevb.84.041301\">https://doi.org/10.1103/physrevb.84.041301</a>"},"volume":84,"author":[{"first_name":"J.","full_name":"Hübner, J.","last_name":"Hübner"},{"first_name":"S.","full_name":"Kunz, S.","last_name":"Kunz"},{"first_name":"S.","last_name":"Oertel","full_name":"Oertel, S."},{"last_name":"Schuh","full_name":"Schuh, D.","first_name":"D."},{"last_name":"Pochwała","full_name":"Pochwała, M.","first_name":"M."},{"first_name":"H. T.","full_name":"Duc, H. 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(2010). Dirac point and edge states in a microwave realization of tight-binding graphene-like structures. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.82.094308\">https://doi.org/10.1103/physrevb.82.094308</a>","mla":"Kuhl, U., et al. “Dirac Point and Edge States in a Microwave Realization of Tight-Binding Graphene-like Structures.” <i>Physical Review B</i>, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>.","bibtex":"@article{Kuhl_Barkhofen_Tudorovskiy_Stöckmann_Hossain_de Forges de Parny_Mortessagne_2010, title={Dirac point and edge states in a microwave realization of tight-binding graphene-like structures}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>}, journal={Physical Review B}, author={Kuhl, U. and Barkhofen, Sonja and Tudorovskiy, T. and Stöckmann, H.-J. and Hossain, T. and de Forges de Parny, L. and Mortessagne, F.}, year={2010} }","short":"U. Kuhl, S. Barkhofen, T. Tudorovskiy, H.-J. Stöckmann, T. Hossain, L. de Forges de Parny, F. Mortessagne, Physical Review B (2010).","ama":"Kuhl U, Barkhofen S, Tudorovskiy T, et al. Dirac point and edge states in a microwave realization of tight-binding graphene-like structures. <i>Physical Review B</i>. Published online 2010. doi:<a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>","ieee":"U. Kuhl <i>et al.</i>, “Dirac point and edge states in a microwave realization of tight-binding graphene-like structures,” <i>Physical Review B</i>, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>.","chicago":"Kuhl, U., Sonja Barkhofen, T. Tudorovskiy, H.-J. Stöckmann, T. Hossain, L. de Forges de Parny, and F. Mortessagne. “Dirac Point and Edge States in a Microwave Realization of Tight-Binding Graphene-like Structures.” <i>Physical Review B</i>, 2010. <a href=\"https://doi.org/10.1103/physrevb.82.094308\">https://doi.org/10.1103/physrevb.82.094308</a>."},"_id":"26499","user_id":"48188","language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public"}]