[{"issue":"6","year":"2011","date_created":"2018-08-27T13:17:45Z","publisher":"American Physical Society (APS)","title":"Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon","publication":"Physical Review B","file":[{"relation":"main_file","success":1,"content_type":"application/pdf","access_level":"closed","file_name":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon.pdf","file_id":"4151","file_size":1541698,"creator":"hclaudia","date_created":"2018-08-27T13:18:53Z","date_updated":"2018-08-27T13:18:53Z"}],"abstract":[{"lang":"eng","text":"Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and\r\nfirst-principlesmethods are presented. The calculations aim at a comprehensive,microscopic understanding of the\r\nprecipitation mechanism in the context of controversial discussions in the literature. For the quantum-mechanical\r\ntreatment, basic processes assumed in the precipitation process are calculated in feasible systems of small\r\nsize. The migration mechanism of a carbon \u0002100\u0003 interstitial and silicon \u000211 0\u0003 self-interstitial in otherwise\r\ndefect-free silicon are investigated using density functional theory calculations. The influence of a nearby\r\nvacancy, another carbon interstitial and a substitutional defect as well as a silicon self-interstitial has been\r\ninvestigated systematically. Interactions of various combinations of defects have been characterized including a\r\ncouple of selected migration pathways within these configurations. Most of the investigated pairs of defects tend\r\nto agglomerate allowing for a reduction in strain. The formation of structures involving strong carbon–carbon\r\nbonds turns out to be very unlikely. In contrast, substitutional carbon occurs in all probability. A long range\r\ncapture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies. A\r\nrather small capture radius is predicted for substitutional carbon and silicon self-interstitials. Initial assumptions\r\nregarding the precipitation mechanism of silicon carbide in bulk silicon are established and conformability to\r\nexperimental findings is discussed. Furthermore, results of the accurate first-principles calculations on defects\r\nand carbon diffusion in silicon are compared to results of classical potential simulations revealing significant\r\nlimitations of the latter method. An approach to work around this problem is proposed. Finally, results of the\r\nclassical potential molecular dynamics simulations of large systems are examined, which reinforce previous\r\nassumptions and give further insight into basic processes involved in the silicon carbide transition."}],"language":[{"iso":"eng"}],"ddc":["530"],"publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2011). Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>, <i>84</i>(6). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6064126}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2011} }","mla":"Zirkelbach, F., et al. “Combinedab Initioand Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 064126, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>."},"intvolume":"        84","author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"last_name":"Stritzker","full_name":"Stritzker, B.","first_name":"B."},{"first_name":"K.","last_name":"Nordlund","full_name":"Nordlund, K."},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"},{"first_name":"W. G.","last_name":"Schmidt","full_name":"Schmidt, W. G."},{"full_name":"Rauls, E.","last_name":"Rauls","first_name":"E."}],"volume":84,"date_updated":"2022-01-06T07:00:26Z","doi":"10.1103/physrevb.84.064126","type":"journal_article","status":"public","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4150","file_date_updated":"2018-08-27T13:18:53Z","article_type":"original","article_number":"064126"},{"_id":"1723","department":[{"_id":"15"},{"_id":"230"}],"user_id":"30525","publication":"Physical Review B","type":"journal_article","status":"public","date_updated":"2022-01-06T06:53:06Z","publisher":"American Physical Society (APS)","volume":84,"date_created":"2018-03-23T12:26:16Z","author":[{"last_name":"Utikal","full_name":"Utikal, Tobias","first_name":"Tobias"},{"id":"30525","full_name":"Zentgraf, Thomas","orcid":"0000-0002-8662-1101","last_name":"Zentgraf","first_name":"Thomas"},{"first_name":"Sergei G.","full_name":"Tikhodeev, Sergei G.","last_name":"Tikhodeev"},{"full_name":"Lippitz, Markus","last_name":"Lippitz","first_name":"Markus"},{"first_name":"Harald","full_name":"Giessen, Harald","last_name":"Giessen"}],"title":"Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices","doi":"10.1103/physrevb.84.075101","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"7","year":"2011","intvolume":"        84","citation":{"apa":"Utikal, T., Zentgraf, T., Tikhodeev, S. G., Lippitz, M., &#38; Giessen, H. (2011). Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices. <i>Physical Review B</i>, <i>84</i>(7). <a href=\"https://doi.org/10.1103/physrevb.84.075101\">https://doi.org/10.1103/physrevb.84.075101</a>","bibtex":"@article{Utikal_Zentgraf_Tikhodeev_Lippitz_Giessen_2011, title={Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.075101\">10.1103/physrevb.84.075101</a>}, number={7}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Utikal, Tobias and Zentgraf, Thomas and Tikhodeev, Sergei G. and Lippitz, Markus and Giessen, Harald}, year={2011} }","short":"T. Utikal, T. Zentgraf, S.G. Tikhodeev, M. Lippitz, H. Giessen, Physical Review B 84 (2011).","mla":"Utikal, Tobias, et al. “Tailoring the Photonic Band Splitting in Metallodielectric Photonic Crystal Superlattices.” <i>Physical Review B</i>, vol. 84, no. 7, American Physical Society (APS), 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.075101\">10.1103/physrevb.84.075101</a>.","chicago":"Utikal, Tobias, Thomas Zentgraf, Sergei G. Tikhodeev, Markus Lippitz, and Harald Giessen. “Tailoring the Photonic Band Splitting in Metallodielectric Photonic Crystal Superlattices.” <i>Physical Review B</i> 84, no. 7 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.075101\">https://doi.org/10.1103/physrevb.84.075101</a>.","ieee":"T. Utikal, T. Zentgraf, S. G. Tikhodeev, M. Lippitz, and H. Giessen, “Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices,” <i>Physical Review B</i>, vol. 84, no. 7, 2011.","ama":"Utikal T, Zentgraf T, Tikhodeev SG, Lippitz M, Giessen H. Tailoring the photonic band splitting in metallodielectric photonic crystal superlattices. <i>Physical Review B</i>. 2011;84(7). doi:<a href=\"https://doi.org/10.1103/physrevb.84.075101\">10.1103/physrevb.84.075101</a>"}},{"date_updated":"2025-12-05T10:41:18Z","author":[{"last_name":"Mietze","full_name":"Mietze, C.","first_name":"C."},{"first_name":"M.","last_name":"Landmann","full_name":"Landmann, M."},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"},{"last_name":"Machhadani","full_name":"Machhadani, H.","first_name":"H."},{"last_name":"Sakr","full_name":"Sakr, S.","first_name":"S."},{"first_name":"M.","full_name":"Tchernycheva, M.","last_name":"Tchernycheva"},{"first_name":"F. H.","last_name":"Julien","full_name":"Julien, F. H."},{"full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"last_name":"Lischka","full_name":"Lischka, K.","first_name":"K."},{"full_name":"As, Donat Josef","id":"14","last_name":"As","orcid":"0000-0003-1121-3565","first_name":"Donat Josef"}],"date_created":"2019-10-01T09:11:23Z","volume":83,"title":"Band offsets in cubic GaN/AlN superlattices","doi":"10.1103/physrevb.83.195301","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"19","year":"2011","citation":{"ama":"Mietze C, Landmann M, Rauls E, et al. Band offsets in cubic GaN/AlN superlattices. <i>Physical Review B</i>. 2011;83(19). doi:<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>","chicago":"Mietze, C., M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F. H. Julien, Wolf Gero Schmidt, K. Lischka, and Donat Josef As. “Band Offsets in Cubic GaN/AlN Superlattices.” <i>Physical Review B</i> 83, no. 19 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.195301\">https://doi.org/10.1103/physrevb.83.195301</a>.","ieee":"C. Mietze <i>et al.</i>, “Band offsets in cubic GaN/AlN superlattices,” <i>Physical Review B</i>, vol. 83, no. 19, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>.","mla":"Mietze, C., et al. “Band Offsets in Cubic GaN/AlN Superlattices.” <i>Physical Review B</i>, vol. 83, no. 19, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>.","short":"C. Mietze, M. Landmann, E. Rauls, H. Machhadani, S. Sakr, M. Tchernycheva, F.H. Julien, W.G. Schmidt, K. Lischka, D.J. As, Physical Review B 83 (2011).","bibtex":"@article{Mietze_Landmann_Rauls_Machhadani_Sakr_Tchernycheva_Julien_Schmidt_Lischka_As_2011, title={Band offsets in cubic GaN/AlN superlattices}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.195301\">10.1103/physrevb.83.195301</a>}, number={19}, journal={Physical Review B}, author={Mietze, C. and Landmann, M. and Rauls, E. and Machhadani, H. and Sakr, S. and Tchernycheva, M. and Julien, F. H. and Schmidt, Wolf Gero and Lischka, K. and As, Donat Josef}, year={2011} }","apa":"Mietze, C., Landmann, M., Rauls, E., Machhadani, H., Sakr, S., Tchernycheva, M., Julien, F. H., Schmidt, W. G., Lischka, K., &#38; As, D. J. (2011). Band offsets in cubic GaN/AlN superlattices. <i>Physical Review B</i>, <i>83</i>(19). <a href=\"https://doi.org/10.1103/physrevb.83.195301\">https://doi.org/10.1103/physrevb.83.195301</a>"},"intvolume":"        83","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13568","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"284"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"type":"journal_article","publication":"Physical Review B","status":"public"},{"language":[{"iso":"eng"}],"_id":"13570","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","status":"public","publication":"Physical Review B","type":"journal_article","title":"Asymmetric saddling of single porphyrin molecules on Au(111)","doi":"10.1103/physrevb.83.165416","date_updated":"2025-12-05T10:40:33Z","volume":83,"author":[{"first_name":"S.","full_name":"Müllegger, S.","last_name":"Müllegger"},{"first_name":"M.","full_name":"Rashidi, M.","last_name":"Rashidi"},{"first_name":"T.","full_name":"Lengauer, T.","last_name":"Lengauer"},{"first_name":"E.","last_name":"Rauls","full_name":"Rauls, E."},{"full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"first_name":"G.","last_name":"Knör","full_name":"Knör, G."},{"full_name":"Schöfberger, W.","last_name":"Schöfberger","first_name":"W."},{"first_name":"R.","last_name":"Koch","full_name":"Koch, R."}],"date_created":"2019-10-01T09:15:39Z","year":"2011","intvolume":"        83","citation":{"ama":"Müllegger S, Rashidi M, Lengauer T, et al. Asymmetric saddling of single porphyrin molecules on Au(111). <i>Physical Review B</i>. 2011;83(16). doi:<a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>","ieee":"S. Müllegger <i>et al.</i>, “Asymmetric saddling of single porphyrin molecules on Au(111),” <i>Physical Review B</i>, vol. 83, no. 16, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>.","chicago":"Müllegger, S., M. Rashidi, T. Lengauer, E. Rauls, Wolf Gero Schmidt, G. Knör, W. Schöfberger, and R. Koch. “Asymmetric Saddling of Single Porphyrin Molecules on Au(111).” <i>Physical Review B</i> 83, no. 16 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.165416\">https://doi.org/10.1103/physrevb.83.165416</a>.","short":"S. Müllegger, M. Rashidi, T. Lengauer, E. Rauls, W.G. Schmidt, G. Knör, W. Schöfberger, R. Koch, Physical Review B 83 (2011).","bibtex":"@article{Müllegger_Rashidi_Lengauer_Rauls_Schmidt_Knör_Schöfberger_Koch_2011, title={Asymmetric saddling of single porphyrin molecules on Au(111)}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>}, number={16}, journal={Physical Review B}, author={Müllegger, S. and Rashidi, M. and Lengauer, T. and Rauls, E. and Schmidt, Wolf Gero and Knör, G. and Schöfberger, W. and Koch, R.}, year={2011} }","mla":"Müllegger, S., et al. “Asymmetric Saddling of Single Porphyrin Molecules on Au(111).” <i>Physical Review B</i>, vol. 83, no. 16, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.165416\">10.1103/physrevb.83.165416</a>.","apa":"Müllegger, S., Rashidi, M., Lengauer, T., Rauls, E., Schmidt, W. G., Knör, G., Schöfberger, W., &#38; Koch, R. (2011). Asymmetric saddling of single porphyrin molecules on Au(111). <i>Physical Review B</i>, <i>83</i>(16). <a href=\"https://doi.org/10.1103/physrevb.83.165416\">https://doi.org/10.1103/physrevb.83.165416</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"16"},{"type":"journal_article","publication":"Physical Review B","status":"public","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"_id":"13563","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"language":[{"iso":"eng"}],"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"issue":"11","year":"2011","citation":{"ama":"Schmidt WG, Babilon M, Thierfelder C, Sanna S, Wippermann S. Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array. <i>Physical Review B</i>. 2011;84(11). doi:<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>","chicago":"Schmidt, Wolf Gero, M. Babilon, C. Thierfelder, S. Sanna, and S. Wippermann. “Influence of Na Adsorption on the Quantum Conductance and Metal-Insulator Transition of the In-Si(111)(4×1)–(8×2) Nanowire Array.” <i>Physical Review B</i> 84, no. 11 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.115416\">https://doi.org/10.1103/physrevb.84.115416</a>.","ieee":"W. G. Schmidt, M. Babilon, C. Thierfelder, S. Sanna, and S. Wippermann, “Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array,” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>.","apa":"Schmidt, W. G., Babilon, M., Thierfelder, C., Sanna, S., &#38; Wippermann, S. (2011). Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array. <i>Physical Review B</i>, <i>84</i>(11). <a href=\"https://doi.org/10.1103/physrevb.84.115416\">https://doi.org/10.1103/physrevb.84.115416</a>","short":"W.G. Schmidt, M. Babilon, C. Thierfelder, S. Sanna, S. Wippermann, Physical Review B 84 (2011).","bibtex":"@article{Schmidt_Babilon_Thierfelder_Sanna_Wippermann_2011, title={Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>}, number={11}, journal={Physical Review B}, author={Schmidt, Wolf Gero and Babilon, M. and Thierfelder, C. and Sanna, S. and Wippermann, S.}, year={2011} }","mla":"Schmidt, Wolf Gero, et al. “Influence of Na Adsorption on the Quantum Conductance and Metal-Insulator Transition of the In-Si(111)(4×1)–(8×2) Nanowire Array.” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.115416\">10.1103/physrevb.84.115416</a>."},"intvolume":"        84","date_updated":"2025-12-05T10:43:19Z","author":[{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"first_name":"M.","last_name":"Babilon","full_name":"Babilon, M."},{"last_name":"Thierfelder","full_name":"Thierfelder, C.","first_name":"C."},{"last_name":"Sanna","full_name":"Sanna, S.","first_name":"S."},{"last_name":"Wippermann","full_name":"Wippermann, S.","first_name":"S."}],"date_created":"2019-10-01T09:01:58Z","volume":84,"title":"Influence of Na adsorption on the quantum conductance and metal-insulator transition of the In-Si(111)(4×1)–(8×2) nanowire array","doi":"10.1103/physrevb.84.115416"},{"title":"Group-VII point defects in ZnSe","doi":"10.1103/physrevb.84.115201","date_updated":"2025-12-05T10:42:56Z","volume":84,"author":[{"last_name":"dos Santos","full_name":"dos Santos, L. S.","first_name":"L. S."},{"first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero"},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"}],"date_created":"2019-10-01T09:03:18Z","year":"2011","intvolume":"        84","citation":{"mla":"dos Santos, L. S., et al. “Group-VII Point Defects in ZnSe.” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>.","short":"L.S. dos Santos, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).","bibtex":"@article{dos Santos_Schmidt_Rauls_2011, title={Group-VII point defects in ZnSe}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>}, number={11}, journal={Physical Review B}, author={dos Santos, L. S. and Schmidt, Wolf Gero and Rauls, E.}, year={2011} }","apa":"dos Santos, L. S., Schmidt, W. G., &#38; Rauls, E. (2011). Group-VII point defects in ZnSe. <i>Physical Review B</i>, <i>84</i>(11). <a href=\"https://doi.org/10.1103/physrevb.84.115201\">https://doi.org/10.1103/physrevb.84.115201</a>","ama":"dos Santos LS, Schmidt WG, Rauls E. Group-VII point defects in ZnSe. <i>Physical Review B</i>. 2011;84(11). doi:<a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>","ieee":"L. S. dos Santos, W. G. Schmidt, and E. Rauls, “Group-VII point defects in ZnSe,” <i>Physical Review B</i>, vol. 84, no. 11, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.115201\">10.1103/physrevb.84.115201</a>.","chicago":"Santos, L. S. dos, Wolf Gero Schmidt, and E. Rauls. “Group-VII Point Defects in ZnSe.” <i>Physical Review B</i> 84, no. 11 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.115201\">https://doi.org/10.1103/physrevb.84.115201</a>."},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"11","language":[{"iso":"eng"}],"_id":"13564","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","status":"public","publication":"Physical Review B","type":"journal_article"},{"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13825","project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"language":[{"iso":"eng"}],"funded_apc":"1","publication":"Physical Review B","type":"journal_article","status":"public","volume":83,"date_created":"2019-10-15T07:20:17Z","author":[{"full_name":"Sanna, S.","last_name":"Sanna","first_name":"S."},{"first_name":"C.","full_name":"Thierfelder, C.","last_name":"Thierfelder"},{"first_name":"S.","full_name":"Wippermann, S.","last_name":"Wippermann"},{"first_name":"T. P.","last_name":"Sinha","full_name":"Sinha, T. P."},{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"}],"date_updated":"2025-12-16T07:41:16Z","doi":"10.1103/physrevb.83.054112","title":"Barium titanate ground- and excited-state properties from first-principles calculations","issue":"5","publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","intvolume":"        83","citation":{"apa":"Sanna, S., Thierfelder, C., Wippermann, S., Sinha, T. P., &#38; Schmidt, W. G. (2011). Barium titanate ground- and excited-state properties from first-principles calculations. <i>Physical Review B</i>, <i>83</i>(5). <a href=\"https://doi.org/10.1103/physrevb.83.054112\">https://doi.org/10.1103/physrevb.83.054112</a>","short":"S. Sanna, C. Thierfelder, S. Wippermann, T.P. Sinha, W.G. Schmidt, Physical Review B 83 (2011).","bibtex":"@article{Sanna_Thierfelder_Wippermann_Sinha_Schmidt_2011, title={Barium titanate ground- and excited-state properties from first-principles calculations}, volume={83}, DOI={<a href=\"https://doi.org/10.1103/physrevb.83.054112\">10.1103/physrevb.83.054112</a>}, number={5}, journal={Physical Review B}, author={Sanna, S. and Thierfelder, C. and Wippermann, S. and Sinha, T. P. and Schmidt, Wolf Gero}, year={2011} }","mla":"Sanna, S., et al. “Barium Titanate Ground- and Excited-State Properties from First-Principles Calculations.” <i>Physical Review B</i>, vol. 83, no. 5, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.83.054112\">10.1103/physrevb.83.054112</a>.","chicago":"Sanna, S., C. Thierfelder, S. Wippermann, T. P. Sinha, and Wolf Gero Schmidt. “Barium Titanate Ground- and Excited-State Properties from First-Principles Calculations.” <i>Physical Review B</i> 83, no. 5 (2011). <a href=\"https://doi.org/10.1103/physrevb.83.054112\">https://doi.org/10.1103/physrevb.83.054112</a>.","ieee":"S. Sanna, C. Thierfelder, S. Wippermann, T. P. Sinha, and W. G. Schmidt, “Barium titanate ground- and excited-state properties from first-principles calculations,” <i>Physical Review B</i>, vol. 83, no. 5, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.83.054112\">10.1103/physrevb.83.054112</a>.","ama":"Sanna S, Thierfelder C, Wippermann S, Sinha TP, Schmidt WG. 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Rauls, Physical Review B 84 (2011).","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2011, title={Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>}, number={6}, journal={Physical Review B}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, J. K. N. and Schmidt, Wolf Gero and Rauls, E.}, year={2011} }","mla":"Zirkelbach, F., et al. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i>, vol. 84, no. 6, 2011, doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner JKN, Schmidt WG, Rauls E. Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon. <i>Physical Review B</i>. 2011;84(6). doi:<a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. K. N. Lindner, W. G. Schmidt, and E. Rauls, “Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon,” <i>Physical Review B</i>, vol. 84, no. 6, 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.064126\">10.1103/physrevb.84.064126</a>.","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, J. K. N. Lindner, Wolf Gero Schmidt, and E. Rauls. “Combined Ab Initio and Classical Potential Simulation Study on Silicon Carbide Precipitation in Silicon.” <i>Physical Review B</i> 84, no. 6 (2011). <a href=\"https://doi.org/10.1103/physrevb.84.064126\">https://doi.org/10.1103/physrevb.84.064126</a>."},"year":"2011","volume":84,"author":[{"first_name":"F.","last_name":"Zirkelbach","full_name":"Zirkelbach, F."},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"},{"last_name":"Nordlund","full_name":"Nordlund, K.","first_name":"K."},{"full_name":"Lindner, J. K. N.","last_name":"Lindner","first_name":"J. K. N."},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."}],"date_created":"2019-10-15T07:16:32Z","date_updated":"2025-12-16T07:51:00Z","doi":"10.1103/physrevb.84.064126","title":"Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon","publication":"Physical Review B","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"13824","language":[{"iso":"eng"}],"funded_apc":"1"},{"status":"public","urn":"40467","type":"journal_article","file_date_updated":"2018-09-04T19:28:55Z","article_type":"original","user_id":"16199","department":[{"_id":"15"},{"_id":"293"},{"_id":"170"},{"_id":"230"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"_id":"4046","citation":{"apa":"Hübner, J., Kunz, S., Oertel, S., Schuh, D., Pochwała, M., Duc, H. T., Förstner, J., Meier, T., &#38; Oestreich, M. (2011). Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. <i>Physical Review B</i>, <i>84</i>(4), 041301(R). <a href=\"https://doi.org/10.1103/physrevb.84.041301\">https://doi.org/10.1103/physrevb.84.041301</a>","short":"J. Hübner, S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H.T. Duc, J. Förstner, T. Meier, M. Oestreich, Physical Review B 84 (2011) 041301(R).","mla":"Hübner, J., et al. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 84, no. 4, American Physical Society (APS), 2011, p. 041301(R), doi:<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>.","bibtex":"@article{Hübner_Kunz_Oertel_Schuh_Pochwała_Duc_Förstner_Meier_Oestreich_2011, title={Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells}, volume={84}, DOI={<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>}, number={4}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Hübner, J. and Kunz, S. and Oertel, S. and Schuh, D. and Pochwała, M. and Duc, H. T. and Förstner, Jens and Meier, Torsten and Oestreich, M.}, year={2011}, pages={041301(R)} }","chicago":"Hübner, J., S. Kunz, S. Oertel, D. Schuh, M. Pochwała, H. T. Duc, Jens Förstner, Torsten Meier, and M. Oestreich. “Electron G-Factor Anisotropy in Symmetric (110)-Oriented GaAs Quantum Wells.” <i>Physical Review B</i> 84, no. 4 (2011): 041301(R). <a href=\"https://doi.org/10.1103/physrevb.84.041301\">https://doi.org/10.1103/physrevb.84.041301</a>.","ieee":"J. Hübner <i>et al.</i>, “Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells,” <i>Physical Review B</i>, vol. 84, no. 4, p. 041301(R), 2011, doi: <a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>.","ama":"Hübner J, Kunz S, Oertel S, et al. Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells. <i>Physical Review B</i>. 2011;84(4):041301(R). doi:<a href=\"https://doi.org/10.1103/physrevb.84.041301\">10.1103/physrevb.84.041301</a>"},"page":"041301(R)","intvolume":"        84","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1098-0121","1550-235X"]},"doi":"10.1103/physrevb.84.041301","author":[{"full_name":"Hübner, J.","last_name":"Hübner","first_name":"J."},{"full_name":"Kunz, S.","last_name":"Kunz","first_name":"S."},{"first_name":"S.","last_name":"Oertel","full_name":"Oertel, S."},{"last_name":"Schuh","full_name":"Schuh, D.","first_name":"D."},{"first_name":"M.","last_name":"Pochwała","full_name":"Pochwała, M."},{"first_name":"H. T.","last_name":"Duc","full_name":"Duc, H. T."},{"full_name":"Förstner, Jens","id":"158","orcid":"0000-0001-7059-9862","last_name":"Förstner","first_name":"Jens"},{"last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"first_name":"M.","full_name":"Oestreich, M.","last_name":"Oestreich"}],"volume":84,"oa":"1","date_updated":"2025-12-16T16:19:20Z","file":[{"content_type":"application/pdf","relation":"main_file","date_updated":"2018-09-04T19:28:55Z","creator":"hclaudia","date_created":"2018-08-22T10:22:40Z","file_size":339595,"file_name":"2011 Hübner,Kunz,Örtel,Schuh,Pochwala,Duc,Förstner,Meier,Östreich_Electron g -factor anisotropy in symmetric (110)-oriented GaAs quantum wells.pdf","file_id":"4047","access_level":"open_access"}],"abstract":[{"lang":"eng","text":"We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs\r\nsingle quantum wells, even a symmetric spatial envelope wave function gives rise to an asymmetric in-plane\r\nelectron Land´e g-factor. The anisotropy is neither a direct consequence of the asymmetric in-plane Dresselhaus\r\nsplitting nor a direct consequence of the asymmetric Zeeman splitting of the hole bands, but rather it is a pure\r\nhigher-order effect that exists as well for diamond-type lattices. The measurements for various well widths are\r\nvery well described within 14 × 14 band k·p theory and illustrate that the electron spin is an excellent meter\r\nvariable for mapping out the internal—otherwise hidden—symmetries in two-dimensional systems. Fourth-order\r\nperturbation theory yields an analytical expression for the strength of the g-factor anisotropy, providing a\r\nqualitative understanding of the observed effects."}],"publication":"Physical Review B","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qw"],"year":"2011","issue":"4","title":"Electron g-factor anisotropy in symmetric (110)-oriented GaAs quantum wells","date_created":"2018-08-22T10:20:23Z","publisher":"American Physical Society (APS)"},{"publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"year":"2010","citation":{"apa":"Kuhl, U., Barkhofen, S., Tudorovskiy, T., Stöckmann, H.-J., Hossain, T., de Forges de Parny, L., &#38; Mortessagne, F. (2010). Dirac point and edge states in a microwave realization of tight-binding graphene-like structures. <i>Physical Review B</i>. <a href=\"https://doi.org/10.1103/physrevb.82.094308\">https://doi.org/10.1103/physrevb.82.094308</a>","bibtex":"@article{Kuhl_Barkhofen_Tudorovskiy_Stöckmann_Hossain_de Forges de Parny_Mortessagne_2010, title={Dirac point and edge states in a microwave realization of tight-binding graphene-like structures}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>}, journal={Physical Review B}, author={Kuhl, U. and Barkhofen, Sonja and Tudorovskiy, T. and Stöckmann, H.-J. and Hossain, T. and de Forges de Parny, L. and Mortessagne, F.}, year={2010} }","short":"U. Kuhl, S. Barkhofen, T. Tudorovskiy, H.-J. Stöckmann, T. Hossain, L. de Forges de Parny, F. Mortessagne, Physical Review B (2010).","mla":"Kuhl, U., et al. “Dirac Point and Edge States in a Microwave Realization of Tight-Binding Graphene-like Structures.” <i>Physical Review B</i>, 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>.","ama":"Kuhl U, Barkhofen S, Tudorovskiy T, et al. Dirac point and edge states in a microwave realization of tight-binding graphene-like structures. <i>Physical Review B</i>. Published online 2010. doi:<a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>","chicago":"Kuhl, U., Sonja Barkhofen, T. Tudorovskiy, H.-J. Stöckmann, T. Hossain, L. de Forges de Parny, and F. Mortessagne. “Dirac Point and Edge States in a Microwave Realization of Tight-Binding Graphene-like Structures.” <i>Physical Review B</i>, 2010. <a href=\"https://doi.org/10.1103/physrevb.82.094308\">https://doi.org/10.1103/physrevb.82.094308</a>.","ieee":"U. Kuhl <i>et al.</i>, “Dirac point and edge states in a microwave realization of tight-binding graphene-like structures,” <i>Physical Review B</i>, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.094308\">10.1103/physrevb.82.094308</a>."},"date_updated":"2022-01-06T06:57:21Z","date_created":"2021-10-19T07:01:28Z","author":[{"full_name":"Kuhl, U.","last_name":"Kuhl","first_name":"U."},{"first_name":"Sonja","full_name":"Barkhofen, Sonja","id":"48188","last_name":"Barkhofen"},{"last_name":"Tudorovskiy","full_name":"Tudorovskiy, T.","first_name":"T."},{"first_name":"H.-J.","last_name":"Stöckmann","full_name":"Stöckmann, H.-J."},{"first_name":"T.","last_name":"Hossain","full_name":"Hossain, T."},{"full_name":"de Forges de Parny, L.","last_name":"de Forges de Parny","first_name":"L."},{"full_name":"Mortessagne, F.","last_name":"Mortessagne","first_name":"F."}],"title":"Dirac point and edge states in a microwave realization of tight-binding graphene-like structures","doi":"10.1103/physrevb.82.094308","type":"journal_article","publication":"Physical Review B","status":"public","_id":"26499","user_id":"48188","language":[{"iso":"eng"}]},{"year":"2010","intvolume":"        81","citation":{"apa":"Fokina, L. 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Reuter, A.D. Wieck, M. Bayer, Physical Review B 81 (2010).","mla":"Fokina, L. V., et al. “Spin Dynamics of Electrons and Holes InInGaAs/GaAsquantum Wells at Millikelvin Temperatures.” <i>Physical Review B</i>, vol. 81, no. 19, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.195304\">10.1103/physrevb.81.195304</a>.","ieee":"L. V. Fokina <i>et al.</i>, “Spin dynamics of electrons and holes inInGaAs/GaAsquantum wells at millikelvin temperatures,” <i>Physical Review B</i>, vol. 81, no. 19, 2010.","chicago":"Fokina, L. V., I. A. Yugova, D. R. Yakovlev, M. M. Glazov, I. A. Akimov, A. Greilich, Dirk Reuter, A. D. Wieck, and M. Bayer. “Spin Dynamics of Electrons and Holes InInGaAs/GaAsquantum Wells at Millikelvin Temperatures.” <i>Physical Review B</i> 81, no. 19 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.195304\">https://doi.org/10.1103/physrevb.81.195304</a>.","ama":"Fokina LV, Yugova IA, Yakovlev DR, et al. Spin dynamics of electrons and holes inInGaAs/GaAsquantum wells at millikelvin temperatures. <i>Physical Review B</i>. 2010;81(19). doi:<a href=\"https://doi.org/10.1103/physrevb.81.195304\">10.1103/physrevb.81.195304</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"19","title":"Spin dynamics of electrons and holes inInGaAs/GaAsquantum wells at millikelvin temperatures","doi":"10.1103/physrevb.81.195304","date_updated":"2022-01-06T07:03:48Z","publisher":"American Physical Society (APS)","volume":81,"author":[{"last_name":"Fokina","full_name":"Fokina, L. V.","first_name":"L. V."},{"last_name":"Yugova","full_name":"Yugova, I. A.","first_name":"I. A."},{"last_name":"Yakovlev","full_name":"Yakovlev, D. R.","first_name":"D. R."},{"first_name":"M. M.","last_name":"Glazov","full_name":"Glazov, M. M."},{"first_name":"I. A.","full_name":"Akimov, I. A.","last_name":"Akimov"},{"last_name":"Greilich","full_name":"Greilich, A.","first_name":"A."},{"last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763","first_name":"Dirk"},{"last_name":"Wieck","full_name":"Wieck, A. D.","first_name":"A. D."},{"last_name":"Bayer","full_name":"Bayer, M.","first_name":"M."}],"date_created":"2019-02-21T14:11:48Z","status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"_id":"7978","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"language":[{"iso":"eng"}],"_id":"7981","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","status":"public","publication":"Physical Review B","type":"journal_article","title":"Control of the transmission phase in an asymmetric four-terminal Aharonov-Bohm interferometer","doi":"10.1103/physrevb.82.045432","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:48Z","volume":82,"author":[{"full_name":"Buchholz, Sven S.","last_name":"Buchholz","first_name":"Sven S."},{"first_name":"Saskia F.","full_name":"Fischer, Saskia F.","last_name":"Fischer"},{"full_name":"Kunze, Ulrich","last_name":"Kunze","first_name":"Ulrich"},{"full_name":"Bell, Matthew","last_name":"Bell","first_name":"Matthew"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."}],"date_created":"2019-02-21T14:32:07Z","year":"2010","intvolume":"        82","citation":{"chicago":"Buchholz, Sven S., Saskia F. Fischer, Ulrich Kunze, Matthew Bell, Dirk Reuter, and Andreas D. Wieck. “Control of the Transmission Phase in an Asymmetric Four-Terminal Aharonov-Bohm Interferometer.” <i>Physical Review B</i> 82, no. 4 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.045432\">https://doi.org/10.1103/physrevb.82.045432</a>.","ieee":"S. S. Buchholz, S. F. Fischer, U. Kunze, M. Bell, D. Reuter, and A. D. Wieck, “Control of the transmission phase in an asymmetric four-terminal Aharonov-Bohm interferometer,” <i>Physical Review B</i>, vol. 82, no. 4, 2010.","ama":"Buchholz SS, Fischer SF, Kunze U, Bell M, Reuter D, Wieck AD. Control of the transmission phase in an asymmetric four-terminal Aharonov-Bohm interferometer. <i>Physical Review B</i>. 2010;82(4). doi:<a href=\"https://doi.org/10.1103/physrevb.82.045432\">10.1103/physrevb.82.045432</a>","short":"S.S. Buchholz, S.F. Fischer, U. Kunze, M. Bell, D. Reuter, A.D. Wieck, Physical Review B 82 (2010).","mla":"Buchholz, Sven S., et al. “Control of the Transmission Phase in an Asymmetric Four-Terminal Aharonov-Bohm Interferometer.” <i>Physical Review B</i>, vol. 82, no. 4, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.045432\">10.1103/physrevb.82.045432</a>.","bibtex":"@article{Buchholz_Fischer_Kunze_Bell_Reuter_Wieck_2010, title={Control of the transmission phase in an asymmetric four-terminal Aharonov-Bohm interferometer}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.045432\">10.1103/physrevb.82.045432</a>}, number={4}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Bell, Matthew and Reuter, Dirk and Wieck, Andreas D.}, year={2010} }","apa":"Buchholz, S. S., Fischer, S. F., Kunze, U., Bell, M., Reuter, D., &#38; Wieck, A. D. (2010). Control of the transmission phase in an asymmetric four-terminal Aharonov-Bohm interferometer. <i>Physical Review B</i>, <i>82</i>(4). <a href=\"https://doi.org/10.1103/physrevb.82.045432\">https://doi.org/10.1103/physrevb.82.045432</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"4"},{"status":"public","publication":"Physical Review B","type":"journal_article","language":[{"iso":"eng"}],"_id":"7989","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","year":"2010","intvolume":"        82","citation":{"bibtex":"@article{Kreisbeck_Kramer_Buchholz_Fischer_Kunze_Reuter_Wieck_2010, title={Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>}, number={16}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Kreisbeck, Christoph and Kramer, Tobias and Buchholz, Sven S. and Fischer, Saskia F. and Kunze, Ulrich and Reuter, Dirk and Wieck, Andreas D.}, year={2010} }","short":"C. Kreisbeck, T. Kramer, S.S. Buchholz, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Physical Review B 82 (2010).","mla":"Kreisbeck, Christoph, et al. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i>, vol. 82, no. 16, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>.","apa":"Kreisbeck, C., Kramer, T., Buchholz, S. S., Fischer, S. F., Kunze, U., Reuter, D., &#38; Wieck, A. D. (2010). Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers. <i>Physical Review B</i>, <i>82</i>(16). <a href=\"https://doi.org/10.1103/physrevb.82.165329\">https://doi.org/10.1103/physrevb.82.165329</a>","chicago":"Kreisbeck, Christoph, Tobias Kramer, Sven S. Buchholz, Saskia F. Fischer, Ulrich Kunze, Dirk Reuter, and Andreas D. Wieck. “Phase Shifts and Phaseπjumps in Four-Terminal Waveguide Aharonov-Bohm Interferometers.” <i>Physical Review B</i> 82, no. 16 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.165329\">https://doi.org/10.1103/physrevb.82.165329</a>.","ieee":"C. Kreisbeck <i>et al.</i>, “Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers,” <i>Physical Review B</i>, vol. 82, no. 16, 2010.","ama":"Kreisbeck C, Kramer T, Buchholz SS, et al. Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers. <i>Physical Review B</i>. 2010;82(16). doi:<a href=\"https://doi.org/10.1103/physrevb.82.165329\">10.1103/physrevb.82.165329</a>"},"publication_identifier":{"issn":["1098-0121","1550-235X"]},"publication_status":"published","issue":"16","title":"Phase shifts and phaseπjumps in four-terminal waveguide Aharonov-Bohm interferometers","doi":"10.1103/physrevb.82.165329","publisher":"American Physical Society (APS)","date_updated":"2022-01-06T07:03:48Z","volume":82,"date_created":"2019-02-21T14:40:35Z","author":[{"first_name":"Christoph","full_name":"Kreisbeck, Christoph","last_name":"Kreisbeck"},{"first_name":"Tobias","last_name":"Kramer","full_name":"Kramer, Tobias"},{"first_name":"Sven S.","last_name":"Buchholz","full_name":"Buchholz, Sven S."},{"first_name":"Saskia F.","last_name":"Fischer","full_name":"Fischer, Saskia F."},{"first_name":"Ulrich","last_name":"Kunze","full_name":"Kunze, Ulrich"},{"first_name":"Dirk","last_name":"Reuter","full_name":"Reuter, Dirk","id":"37763"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."}]},{"status":"public","urn":"41740","type":"journal_article","file_date_updated":"2018-09-04T19:58:41Z","article_type":"original","article_number":"115305","user_id":"158","department":[{"_id":"15"}],"_id":"4174","citation":{"bibtex":"@article{Grodecka-Grad_Förstner_2010, title={Theory of phonon-mediated relaxation in doped quantum dot molecules}, volume={81}, DOI={<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>}, number={11115305}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Grodecka-Grad, A. and Förstner, Jens}, year={2010} }","mla":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i>, vol. 81, no. 11, 115305, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>.","short":"A. Grodecka-Grad, J. Förstner, Physical Review B 81 (2010).","apa":"Grodecka-Grad, A., &#38; Förstner, J. (2010). Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>, <i>81</i>(11). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>","ieee":"A. Grodecka-Grad and J. Förstner, “Theory of phonon-mediated relaxation in doped quantum dot molecules,” <i>Physical Review B</i>, vol. 81, no. 11, 2010.","chicago":"Grodecka-Grad, A., and Jens Förstner. “Theory of Phonon-Mediated Relaxation in Doped Quantum Dot Molecules.” <i>Physical Review B</i> 81, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.81.115305\">https://doi.org/10.1103/physrevb.81.115305</a>.","ama":"Grodecka-Grad A, Förstner J. Theory of phonon-mediated relaxation in doped quantum dot molecules. <i>Physical Review B</i>. 2010;81(11). doi:<a href=\"https://doi.org/10.1103/physrevb.81.115305\">10.1103/physrevb.81.115305</a>"},"intvolume":"        81","publication_status":"published","publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","doi":"10.1103/physrevb.81.115305","author":[{"first_name":"A.","last_name":"Grodecka-Grad","full_name":"Grodecka-Grad, A."},{"first_name":"Jens","last_name":"Förstner","orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","id":"158"}],"volume":81,"date_updated":"2022-01-06T07:00:29Z","oa":"1","file":[{"relation":"main_file","content_type":"application/pdf","file_size":680408,"access_level":"open_access","file_name":"2010 Grodecka-Grad,Förstner_Theory of phonon-mediated relaxation in doped quantum dot molecules.pdf","file_id":"4175","date_updated":"2018-09-04T19:58:41Z","date_created":"2018-08-28T08:58:21Z","creator":"hclaudia"}],"abstract":[{"lang":"eng","text":"A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrierphonon\r\ncouplings is studied by means of a nonperturbative quantum kinetic theory. The interaction with acoustic phonons by deformation potential and piezoelectric coupling is taken into account. We show that the phonon-mediated relaxation is fast on a picosecond time scale and is dominated by the usually neglected off-diagonal coupling to the lattice degrees of freedom leading to phonon-assisted electron tunneling. We show that in the parameter regime of current electrical and optical experiments, the microscopic non-Markovian theory has to be employed."}],"publication":"Physical Review B","language":[{"iso":"eng"}],"ddc":["530"],"keyword":["tet_topic_qd"],"year":"2010","issue":"11","title":"Theory of phonon-mediated relaxation in doped quantum dot molecules","date_created":"2018-08-28T08:57:24Z","publisher":"American Physical Society (APS)"},{"type":"journal_article","status":"public","department":[{"_id":"15"}],"user_id":"55706","_id":"4200","file_date_updated":"2018-08-28T12:23:29Z","extern":"1","article_type":"original","article_number":"054517","publication_identifier":{"issn":["1098-0121","1550-235X"]},"has_accepted_license":"1","publication_status":"published","intvolume":"        82","citation":{"ama":"Zdravkov VI, Kehrle J, Obermeier G, et al. Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>. 2010;82(5). doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>","chicago":"Zdravkov, V. I., J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i> 82, no. 5 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>.","ieee":"V. I. Zdravkov <i>et al.</i>, “Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers,” <i>Physical Review B</i>, vol. 82, no. 5, 2010.","apa":"Zdravkov, V. I., Kehrle, J., Obermeier, G., Gsell, S., Schreck, M., Müller, C., … Tagirov, L. R. (2010). Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers. <i>Physical Review B</i>, <i>82</i>(5). <a href=\"https://doi.org/10.1103/physrevb.82.054517\">https://doi.org/10.1103/physrevb.82.054517</a>","short":"V.I. Zdravkov, J. Kehrle, G. Obermeier, S. Gsell, M. Schreck, C. Müller, H.-A. Krug von Nidda, J. Lindner, J. Moosburger-Will, E. Nold, R. Morari, V.V. Ryazanov, A.S. Sidorenko, S. Horn, R. Tidecks, L.R. Tagirov, Physical Review B 82 (2010).","bibtex":"@article{Zdravkov_Kehrle_Obermeier_Gsell_Schreck_Müller_Krug von Nidda_Lindner_Moosburger-Will_Nold_et al._2010, title={Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>}, number={5054517}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zdravkov, V. I. and Kehrle, J. and Obermeier, G. and Gsell, S. and Schreck, M. and Müller, C. and Krug von Nidda, H.-A. and Lindner, Jörg and Moosburger-Will, J. and Nold, E. and et al.}, year={2010} }","mla":"Zdravkov, V. I., et al. “Reentrant Superconductivity in Superconductor/Ferromagnetic-Alloy Bilayers.” <i>Physical Review B</i>, vol. 82, no. 5, 054517, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.054517\">10.1103/physrevb.82.054517</a>."},"volume":82,"author":[{"first_name":"V. I.","last_name":"Zdravkov","full_name":"Zdravkov, V. I."},{"first_name":"J.","last_name":"Kehrle","full_name":"Kehrle, J."},{"full_name":"Obermeier, G.","last_name":"Obermeier","first_name":"G."},{"full_name":"Gsell, S.","last_name":"Gsell","first_name":"S."},{"full_name":"Schreck, M.","last_name":"Schreck","first_name":"M."},{"first_name":"C.","last_name":"Müller","full_name":"Müller, C."},{"full_name":"Krug von Nidda, H.-A.","last_name":"Krug von Nidda","first_name":"H.-A."},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"first_name":"J.","last_name":"Moosburger-Will","full_name":"Moosburger-Will, J."},{"first_name":"E.","full_name":"Nold, E.","last_name":"Nold"},{"first_name":"R.","full_name":"Morari, R.","last_name":"Morari"},{"first_name":"V. V.","last_name":"Ryazanov","full_name":"Ryazanov, V. V."},{"first_name":"A. S.","last_name":"Sidorenko","full_name":"Sidorenko, A. S."},{"full_name":"Horn, S.","last_name":"Horn","first_name":"S."},{"first_name":"R.","last_name":"Tidecks","full_name":"Tidecks, R."},{"first_name":"L. R.","last_name":"Tagirov","full_name":"Tagirov, L. R."}],"date_updated":"2022-01-06T07:00:34Z","doi":"10.1103/physrevb.82.054517","publication":"Physical Review B","file":[{"file_id":"4201","access_level":"closed","file_name":"Reentrant superconductivity in superconductor-ferromagnetic-alloy bilayers.pdf","file_size":723266,"date_created":"2018-08-28T12:23:29Z","creator":"hclaudia","date_updated":"2018-08-28T12:23:29Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"abstract":[{"text":"We studied the Fulde-Ferrell-Larkin-Ovchinnikov-type state established due to the proximity effect in superconducting\r\nNb/Cu_41Ni_59 bilayers. Using a special wedge-type deposition technique, series of 20–35\r\nsamples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few\r\nnanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering\r\nspectrometry, high-resolution transmission electron microscopy, and Auger spectroscopy. The magnetic\r\nproperties of the ferromagnetic alloy layer were characterized with superconducting quantum interference\r\ndevice magnetometry. These studies yield precise information about the thickness and demonstrate the homogeneity\r\nof the alloy composition and magnetic properties along the sample series. The dependencies of the\r\ncritical temperature on the Nb and Cu41Ni59 layer thickness, T_c(d_S) and T_c(d_F), were investigated for constant\r\nthickness d_F of the magnetic alloy layer and d_S of the superconducting layer, respectively. All types of\r\nnonmonotonic behaviors of T_c versus d_F predicted by the theory could be realized experimentally, from\r\nreentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity\r\nwith a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the\r\nmultiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of\r\nparameters. Then, T_c(d_F) diagrams of a hypothetical ferromagnet/superconductor/ferromagnet spin-switch core\r\nstructure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are\r\ndiscussed in detail in view of the achieved results.","lang":"eng"}],"language":[{"iso":"eng"}],"ddc":["530"],"issue":"5","year":"2010","date_created":"2018-08-28T12:22:11Z","publisher":"American Physical Society (APS)","title":"Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers"},{"issue":"9","year":"2010","date_created":"2018-08-28T12:30:15Z","publisher":"American Physical Society (APS)","title":"Defects in carbon implanted silicon calculated by classical potentials and first-principles methods","publication":"Physical Review B","file":[{"date_updated":"2018-08-28T12:31:01Z","date_created":"2018-08-28T12:31:01Z","creator":"hclaudia","file_size":238023,"access_level":"closed","file_id":"4205","file_name":"Defects in Carbon implanted Silicon calculated by classical potentials and first principles methods.pdf","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"text":"A comparative theoretical investigation of carbon interstitials in silicon is presented. Calculations using\r\nclassical potentials are compared to first-principles density-functional theory calculations of the geometries,\r\nformation, and activation energies of the carbon dumbbell interstitial, showing the importance of a quantummechanical\r\ndescription of this system. In contrast to previous studies, the present first-principles calculations of\r\nthe interstitial carbon migration path yield an activation energy that excellently matches the experiment. The\r\nbond-centered interstitial configuration shows a net magnetization of two electrons, illustrating the need for\r\nspin-polarized calculations.","lang":"eng"}],"language":[{"iso":"eng"}],"ddc":["530"],"publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1098-0121","1550-235X"]},"citation":{"apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &#38; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>, <i>82</i>(9). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Lindner_Schmidt_Rauls_2010, title={Defects in carbon implanted silicon calculated by classical potentials and first-principles methods}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>}, number={9094110}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Lindner, Jörg and Schmidt, W. G. and Rauls, E.}, year={2010} }","mla":"Zirkelbach, F., et al. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i>, vol. 82, no. 9, 094110, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. <i>Physical Review B</i>. 2010;82(9). doi:<a href=\"https://doi.org/10.1103/physrevb.82.094110\">10.1103/physrevb.82.094110</a>","chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Jörg Lindner, W. G. Schmidt, and E. Rauls. “Defects in Carbon Implanted Silicon Calculated by Classical Potentials and First-Principles Methods.” <i>Physical Review B</i> 82, no. 9 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.094110\">https://doi.org/10.1103/physrevb.82.094110</a>.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W. G. Schmidt, and E. Rauls, “Defects in carbon implanted silicon calculated by classical potentials and first-principles methods,” <i>Physical Review B</i>, vol. 82, no. 9, 2010."},"intvolume":"        82","author":[{"last_name":"Zirkelbach","full_name":"Zirkelbach, F.","first_name":"F."},{"first_name":"B.","last_name":"Stritzker","full_name":"Stritzker, B."},{"full_name":"Nordlund, K.","last_name":"Nordlund","first_name":"K."},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"W. G.","full_name":"Schmidt, W. G.","last_name":"Schmidt"},{"first_name":"E.","full_name":"Rauls, E.","last_name":"Rauls"}],"volume":82,"date_updated":"2022-01-06T07:00:35Z","doi":"10.1103/physrevb.82.094110","type":"journal_article","status":"public","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"_id":"4204","file_date_updated":"2018-08-28T12:31:01Z","article_type":"original","article_number":"094110"},{"year":"2010","issue":"11","title":"Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells","publisher":"American Physical Society (APS)","date_created":"2018-08-27T10:25:36Z","abstract":[{"text":"The dynamics of charge and spin injection currents excited by circularly polarized, one-color laser beams in\r\nsemiconductor quantum wells is analyzed. Our microscopic approach is based on a 14x14 k · p band-structure\r\ntheory in combination with multisubband semiconductor Bloch equations which allows a detailed analysis of\r\nthe photogenerated carrier distributions and coherences in k space. Charge and spin injection currents are\r\nnumerically calculated for [110]- and [001]-grown GaAs quantum wells including dc population contributions\r\nand ac contributions that arise from intersubband coherences. The dependencies of the injection currents on the\r\nexcitation conditions, in particular, the photon energy are computed and discussed.","lang":"eng"}],"file":[{"file_id":"4128","file_name":"2010 Duc,Förstner,Meier_Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells.pdf","access_level":"closed","file_size":639662,"date_created":"2018-08-27T10:27:00Z","creator":"hclaudia","date_updated":"2018-08-27T10:27:00Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"publication":"Physical Review B","keyword":["tet_topic_qw"],"ddc":["530"],"language":[{"iso":"eng"}],"intvolume":"        82","citation":{"ieee":"H. T. Duc, J. Förstner, and T. Meier, “Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells,” <i>Physical Review B</i>, vol. 82, no. 11, Art. no. 115316, 2010, doi: <a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>.","chicago":"Duc, Huynh Thanh, Jens Förstner, and Torsten Meier. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i> 82, no. 11 (2010). <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>.","ama":"Duc HT, Förstner J, Meier T. Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>. 2010;82(11). doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>","apa":"Duc, H. T., Förstner, J., &#38; Meier, T. (2010). Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells. <i>Physical Review B</i>, <i>82</i>(11), Article 115316. <a href=\"https://doi.org/10.1103/physrevb.82.115316\">https://doi.org/10.1103/physrevb.82.115316</a>","mla":"Duc, Huynh Thanh, et al. “Microscopic Analysis of Charge and Spin Photocurrents Injected by Circularly Polarized One-Color Laser Pulses in GaAs Quantum Wells.” <i>Physical Review B</i>, vol. 82, no. 11, 115316, American Physical Society (APS), 2010, doi:<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>.","bibtex":"@article{Duc_Förstner_Meier_2010, title={Microscopic analysis of charge and spin photocurrents injected by circularly polarized one-color laser pulses in GaAs quantum wells}, volume={82}, DOI={<a href=\"https://doi.org/10.1103/physrevb.82.115316\">10.1103/physrevb.82.115316</a>}, number={11115316}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Duc, Huynh Thanh and Förstner, Jens and Meier, Torsten}, year={2010} }","short":"H.T. Duc, J. Förstner, T. 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