[{"issue":"9","publication_status":"published","publication_identifier":{"issn":["1567-1739"]},"citation":{"ama":"Kim YM, Sleiter D, Sanaka K, et al. Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe. <i>Current Applied Physics</i>. 2014;14(9):1234-1239. doi:<a href=\"https://doi.org/10.1016/j.cap.2014.06.017\">10.1016/j.cap.2014.06.017</a>","chicago":"Kim, Y.M., D. Sleiter, K. Sanaka, Dirk Reuter, K. Lischka, Y. Yamamoto, and A. Pawlis. “Optically Controlled Initialization and Read-out of an Electron Spin Bound to a Fluorine Donor in ZnSe.” <i>Current Applied Physics</i> 14, no. 9 (2014): 1234–39. <a href=\"https://doi.org/10.1016/j.cap.2014.06.017\">https://doi.org/10.1016/j.cap.2014.06.017</a>.","ieee":"Y. M. Kim <i>et al.</i>, “Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe,” <i>Current Applied Physics</i>, vol. 14, no. 9, pp. 1234–1239, 2014.","mla":"Kim, Y. M., et al. “Optically Controlled Initialization and Read-out of an Electron Spin Bound to a Fluorine Donor in ZnSe.” <i>Current Applied Physics</i>, vol. 14, no. 9, Elsevier BV, 2014, pp. 1234–39, doi:<a href=\"https://doi.org/10.1016/j.cap.2014.06.017\">10.1016/j.cap.2014.06.017</a>.","short":"Y.M. Kim, D. Sleiter, K. Sanaka, D. Reuter, K. Lischka, Y. Yamamoto, A. Pawlis, Current Applied Physics 14 (2014) 1234–1239.","bibtex":"@article{Kim_Sleiter_Sanaka_Reuter_Lischka_Yamamoto_Pawlis_2014, title={Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe}, volume={14}, DOI={<a href=\"https://doi.org/10.1016/j.cap.2014.06.017\">10.1016/j.cap.2014.06.017</a>}, number={9}, journal={Current Applied Physics}, publisher={Elsevier BV}, author={Kim, Y.M. and Sleiter, D. and Sanaka, K. and Reuter, Dirk and Lischka, K. and Yamamoto, Y. and Pawlis, A.}, year={2014}, pages={1234–1239} }","apa":"Kim, Y. M., Sleiter, D., Sanaka, K., Reuter, D., Lischka, K., Yamamoto, Y., &#38; Pawlis, A. (2014). Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe. <i>Current Applied Physics</i>, <i>14</i>(9), 1234–1239. <a href=\"https://doi.org/10.1016/j.cap.2014.06.017\">https://doi.org/10.1016/j.cap.2014.06.017</a>"},"intvolume":"        14","page":"1234-1239","year":"2014","author":[{"first_name":"Y.M.","last_name":"Kim","full_name":"Kim, Y.M."},{"full_name":"Sleiter, D.","last_name":"Sleiter","first_name":"D."},{"last_name":"Sanaka","full_name":"Sanaka, K.","first_name":"K."},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Lischka, K.","last_name":"Lischka","first_name":"K."},{"first_name":"Y.","full_name":"Yamamoto, Y.","last_name":"Yamamoto"},{"full_name":"Pawlis, A.","last_name":"Pawlis","first_name":"A."}],"date_created":"2019-01-29T12:34:53Z","volume":14,"publisher":"Elsevier BV","date_updated":"2022-01-06T07:03:30Z","doi":"10.1016/j.cap.2014.06.017","title":"Optically controlled initialization and read-out of an electron spin bound to a fluorine donor in ZnSe","type":"journal_article","publication":"Current Applied Physics","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7231","language":[{"iso":"eng"}]},{"page":"S7-S11","intvolume":"        14","citation":{"ama":"Lo F-Y, Guo J-Y, Huang C-D, et al. Evidences of defect contribution in magnetically ordered Sm-implanted GaN. <i>Current Applied Physics</i>. 2013;14:S7-S11. doi:<a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">10.1016/j.cap.2013.11.051</a>","ieee":"F.-Y. Lo <i>et al.</i>, “Evidences of defect contribution in magnetically ordered Sm-implanted GaN,” <i>Current Applied Physics</i>, vol. 14, pp. S7–S11, 2013.","chicago":"Lo, Fang-Yuh, Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena Ney, Andreas Ney, et al. “Evidences of Defect Contribution in Magnetically Ordered Sm-Implanted GaN.” <i>Current Applied Physics</i> 14 (2013): S7–11. <a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">https://doi.org/10.1016/j.cap.2013.11.051</a>.","short":"F.-Y. Lo, J.-Y. Guo, C.-D. Huang, K.-C. Chou, H.-L. Liu, V. Ney, A. Ney, M.-Y. Chern, S. Shvarkov, D. Reuter, A.D. Wieck, S. Pezzagna, J. Massies, Current Applied Physics 14 (2013) S7–S11.","bibtex":"@article{Lo_Guo_Huang_Chou_Liu_Ney_Ney_Chern_Shvarkov_Reuter_et al._2013, title={Evidences of defect contribution in magnetically ordered Sm-implanted GaN}, volume={14}, DOI={<a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">10.1016/j.cap.2013.11.051</a>}, journal={Current Applied Physics}, publisher={Elsevier BV}, author={Lo, Fang-Yuh and Guo, Jhong-Yu and Huang, Cheng-De and Chou, Kai-Chieh and Liu, Hsiang-Lin and Ney, Verena and Ney, Andreas and Chern, Ming-Yau and Shvarkov, Stepan and Reuter, Dirk and et al.}, year={2013}, pages={S7–S11} }","mla":"Lo, Fang-Yuh, et al. “Evidences of Defect Contribution in Magnetically Ordered Sm-Implanted GaN.” <i>Current Applied Physics</i>, vol. 14, Elsevier BV, 2013, pp. S7–11, doi:<a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">10.1016/j.cap.2013.11.051</a>.","apa":"Lo, F.-Y., Guo, J.-Y., Huang, C.-D., Chou, K.-C., Liu, H.-L., Ney, V., … Massies, J. (2013). Evidences of defect contribution in magnetically ordered Sm-implanted GaN. <i>Current Applied Physics</i>, <i>14</i>, S7–S11. <a href=\"https://doi.org/10.1016/j.cap.2013.11.051\">https://doi.org/10.1016/j.cap.2013.11.051</a>"},"year":"2013","publication_identifier":{"issn":["1567-1739"]},"publication_status":"published","doi":"10.1016/j.cap.2013.11.051","title":"Evidences of defect contribution in magnetically ordered Sm-implanted GaN","volume":14,"date_created":"2019-01-29T12:43:55Z","author":[{"first_name":"Fang-Yuh","last_name":"Lo","full_name":"Lo, Fang-Yuh"},{"first_name":"Jhong-Yu","last_name":"Guo","full_name":"Guo, Jhong-Yu"},{"last_name":"Huang","full_name":"Huang, Cheng-De","first_name":"Cheng-De"},{"last_name":"Chou","full_name":"Chou, Kai-Chieh","first_name":"Kai-Chieh"},{"first_name":"Hsiang-Lin","full_name":"Liu, Hsiang-Lin","last_name":"Liu"},{"first_name":"Verena","full_name":"Ney, Verena","last_name":"Ney"},{"full_name":"Ney, Andreas","last_name":"Ney","first_name":"Andreas"},{"first_name":"Ming-Yau","full_name":"Chern, Ming-Yau","last_name":"Chern"},{"first_name":"Stepan","full_name":"Shvarkov, Stepan","last_name":"Shvarkov"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"first_name":"Sébastien","full_name":"Pezzagna, Sébastien","last_name":"Pezzagna"},{"last_name":"Massies","full_name":"Massies, Jean","first_name":"Jean"}],"date_updated":"2022-01-06T07:03:30Z","publisher":"Elsevier BV","status":"public","publication":"Current Applied Physics","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514","_id":"7236"},{"date_created":"2019-10-09T11:18:58Z","author":[{"id":"468","full_name":"Schmidt, Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","first_name":"Wolf Gero"},{"last_name":"Hermann","full_name":"Hermann, A.","first_name":"A."},{"first_name":"F.","last_name":"Fuchs","full_name":"Fuchs, F."},{"first_name":"F.","last_name":"Bechstedt","full_name":"Bechstedt, F."}],"volume":6,"date_updated":"2025-12-05T13:25:20Z","doi":"10.1016/j.cap.2005.11.069","title":"Si(001) surface optical anisotropies induced by π-conjugated overlayers and oxidation","publication_status":"published","publication_identifier":{"issn":["1567-1739"]},"citation":{"mla":"Schmidt, Wolf Gero, et al. “Si(001) Surface Optical Anisotropies Induced by π-Conjugated Overlayers and Oxidation.” <i>Current Applied Physics</i>, vol. 6, 2006, pp. 525–30, doi:<a href=\"https://doi.org/10.1016/j.cap.2005.11.069\">10.1016/j.cap.2005.11.069</a>.","short":"W.G. Schmidt, A. Hermann, F. Fuchs, F. Bechstedt, Current Applied Physics 6 (2006) 525–530.","bibtex":"@article{Schmidt_Hermann_Fuchs_Bechstedt_2006, title={Si(001) surface optical anisotropies induced by π-conjugated overlayers and oxidation}, volume={6}, DOI={<a href=\"https://doi.org/10.1016/j.cap.2005.11.069\">10.1016/j.cap.2005.11.069</a>}, journal={Current Applied Physics}, author={Schmidt, Wolf Gero and Hermann, A. and Fuchs, F. and Bechstedt, F.}, year={2006}, pages={525–530} }","apa":"Schmidt, W. G., Hermann, A., Fuchs, F., &#38; Bechstedt, F. (2006). Si(001) surface optical anisotropies induced by π-conjugated overlayers and oxidation. <i>Current Applied Physics</i>, <i>6</i>, 525–530. <a href=\"https://doi.org/10.1016/j.cap.2005.11.069\">https://doi.org/10.1016/j.cap.2005.11.069</a>","chicago":"Schmidt, Wolf Gero, A. Hermann, F. Fuchs, and F. Bechstedt. “Si(001) Surface Optical Anisotropies Induced by π-Conjugated Overlayers and Oxidation.” <i>Current Applied Physics</i> 6 (2006): 525–30. <a href=\"https://doi.org/10.1016/j.cap.2005.11.069\">https://doi.org/10.1016/j.cap.2005.11.069</a>.","ieee":"W. G. Schmidt, A. Hermann, F. Fuchs, and F. Bechstedt, “Si(001) surface optical anisotropies induced by π-conjugated overlayers and oxidation,” <i>Current Applied Physics</i>, vol. 6, pp. 525–530, 2006, doi: <a href=\"https://doi.org/10.1016/j.cap.2005.11.069\">10.1016/j.cap.2005.11.069</a>.","ama":"Schmidt WG, Hermann A, Fuchs F, Bechstedt F. Si(001) surface optical anisotropies induced by π-conjugated overlayers and oxidation. <i>Current Applied Physics</i>. 2006;6:525-530. doi:<a href=\"https://doi.org/10.1016/j.cap.2005.11.069\">10.1016/j.cap.2005.11.069</a>"},"intvolume":"         6","page":"525-530","year":"2006","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"13692","language":[{"iso":"eng"}],"funded_apc":"1","type":"journal_article","publication":"Current Applied Physics","status":"public"},{"_id":"13693","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","language":[{"iso":"eng"}],"publication":"Current Applied Physics","type":"journal_article","status":"public","date_updated":"2025-12-05T13:23:56Z","volume":6,"author":[{"first_name":"Wolf Gero","id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"last_name":"Seino","full_name":"Seino, K.","first_name":"K."}],"date_created":"2019-10-09T11:20:03Z","title":"Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping","doi":"10.1016/j.cap.2005.11.012","publication_identifier":{"issn":["1567-1739"]},"publication_status":"published","year":"2006","page":"331-333","intvolume":"         6","citation":{"apa":"Schmidt, W. G., &#38; Seino, K. (2006). Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping. <i>Current Applied Physics</i>, <i>6</i>, 331–333. <a href=\"https://doi.org/10.1016/j.cap.2005.11.012\">https://doi.org/10.1016/j.cap.2005.11.012</a>","short":"W.G. Schmidt, K. Seino, Current Applied Physics 6 (2006) 331–333.","mla":"Schmidt, Wolf Gero, and K. Seino. “Si(001) c(4×2)–p(2×2) Surface Phase Transitions Induced by Electric Fields and Doping.” <i>Current Applied Physics</i>, vol. 6, 2006, pp. 331–33, doi:<a href=\"https://doi.org/10.1016/j.cap.2005.11.012\">10.1016/j.cap.2005.11.012</a>.","bibtex":"@article{Schmidt_Seino_2006, title={Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping}, volume={6}, DOI={<a href=\"https://doi.org/10.1016/j.cap.2005.11.012\">10.1016/j.cap.2005.11.012</a>}, journal={Current Applied Physics}, author={Schmidt, Wolf Gero and Seino, K.}, year={2006}, pages={331–333} }","ama":"Schmidt WG, Seino K. Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping. <i>Current Applied Physics</i>. 2006;6:331-333. doi:<a href=\"https://doi.org/10.1016/j.cap.2005.11.012\">10.1016/j.cap.2005.11.012</a>","ieee":"W. G. Schmidt and K. Seino, “Si(001) c(4×2)–p(2×2) surface phase transitions induced by electric fields and doping,” <i>Current Applied Physics</i>, vol. 6, pp. 331–333, 2006, doi: <a href=\"https://doi.org/10.1016/j.cap.2005.11.012\">10.1016/j.cap.2005.11.012</a>.","chicago":"Schmidt, Wolf Gero, and K. Seino. “Si(001) c(4×2)–p(2×2) Surface Phase Transitions Induced by Electric Fields and Doping.” <i>Current Applied Physics</i> 6 (2006): 331–33. <a href=\"https://doi.org/10.1016/j.cap.2005.11.012\">https://doi.org/10.1016/j.cap.2005.11.012</a>."}}]