TY - JOUR AU - Eckstein, Andreas AU - Christ, Andreas AU - Mosley, Peter J. AU - Silberhorn, Christine ID - 40186 IS - 4 JF - physica status solidi c KW - Condensed Matter Physics SN - 1862-6351 TI - Realistic g (2) measurement of a PDC source with single photon detectors in the presence of background VL - 8 ER - TY - JOUR AU - Gerstmann, Uwe AU - Rohrmüller, M. AU - Mauri, F. AU - Schmidt, Wolf Gero ID - 13574 IS - 2 JF - physica status solidi (c) SN - 1862-6351 TI - Ab initiog-tensor calculation for paramagnetic surface states: hydrogen adsorption at Si surfaces VL - 7 ER - TY - JOUR AU - Wippermann, S. AU - Schmidt, Wolf Gero AU - Bechstedt, F. AU - Chandola, S. AU - Hinrichs, K. AU - Gensch, M. AU - Esser, N. AU - Fleischer, K. AU - McGilp, J. F. ID - 13581 IS - 2 JF - physica status solidi (c) SN - 1862-6351 TI - Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles VL - 7 ER - TY - JOUR AU - Sanna, Simone AU - Schmidt, Wolf Gero ID - 13838 IS - 7-8 JF - physica status solidi (c) SN - 1862-6351 TI - GaN growth on LiNbO3 (0001) - a first-principles simulation VL - 7 ER - TY - JOUR AU - Blankenburg, S. AU - Schmidt, Wolf Gero ID - 13839 IS - 2 JF - physica status solidi (c) SN - 1862-6351 TI - Temperature dependent stability of self-assembled molecular rows VL - 7 ER - TY - JOUR AU - Blankenburg, S. AU - Rauls, E. AU - Schmidt, Wolf Gero ID - 13841 IS - 2 JF - physica status solidi (c) SN - 1862-6351 TI - The physics of highly ordered molecular rows VL - 7 ER - TY - JOUR AU - Sanna, Simone AU - Gavrilenko, Alexander V. AU - Schmidt, Wolf Gero ID - 13842 IS - 2 JF - physica status solidi (c) SN - 1862-6351 TI - Ab initio investigation of the LiNbO3(0001) surface VL - 7 ER - TY - JOUR AU - Wippermann, S. AU - Schmidt, Wolf Gero AU - Thissen, P. AU - Grundmeier, G. ID - 13843 IS - 2 JF - physica status solidi (c) SN - 1862-6351 TI - Dissociative and molecular adsorption of water onα-Al2O3(0001) VL - 7 ER - TY - JOUR AB - The growth of cubic group III-nitrides is a direct way to eliminate polarization effects, which inherently limit the fabrication of normally-off heterojunction field-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero layers grown by plasma assisted molecular beam epitaxy (MBE) on free standing 3C-SiC (001). The electrical insulation of 3C-SiC was realised by Ar+ implantation before c-AlGaN/GaN MBE. The structural properties of the epilayers were studied by highresolution x-ray diffraction (HRXRD). HFETs with normally off and normally-on characteristics were fabricated of cubic AlGaN/GaN. Capacitance-voltage (CV) characteristics of thegate contact were performed to detect the electron channel at the c-AlGaN/GaN hetero interface. AU - Tschumak, Elena AU - Lindner, Jörg AU - Bürger, M. AU - Lischka, K. AU - Nagasawa, H. AU - Abe, M. AU - As, Donald ID - 4196 IS - 1 JF - physica status solidi (c) SN - 1862-6351 TI - Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001) VL - 7 ER - TY - JOUR AU - Blankenburg, S. AU - Rauls, E. AU - Schmidt, Wolf Gero ID - 13576 JF - physica status solidi (c) SN - 1862-6351 TI - The physics of highly ordered molecular rows ER -