[{"year":"2025","citation":{"ama":"Zare Pour MA, Shekarabi S, Ruiz Alvarado IA, et al. Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction. <i>Advanced Functional Materials</i>. Published online 2025. doi:<a href=\"https://doi.org/10.1002/adfm.202423702\">10.1002/adfm.202423702</a>","chicago":"Zare Pour, Mohammad Amin, Sahar Shekarabi, Isaac Azahel Ruiz Alvarado, Jonathan Diederich, Yuyings Gao, Agnieszka Paszuk, Dominik C. Moritz, et al. “Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction.” <i>Advanced Functional Materials</i>, 2025. <a href=\"https://doi.org/10.1002/adfm.202423702\">https://doi.org/10.1002/adfm.202423702</a>.","ieee":"M. A. Zare Pour <i>et al.</i>, “Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction,” <i>Advanced Functional Materials</i>, 2025, doi: <a href=\"https://doi.org/10.1002/adfm.202423702\">10.1002/adfm.202423702</a>.","apa":"Zare Pour, M. A., Shekarabi, S., Ruiz Alvarado, I. A., Diederich, J., Gao, Y., Paszuk, A., Moritz, D. C., Jaegermann, W., Friedrich, D., van de Krol, R., Schmidt, W. G., &#38; Hannappel, T. (2025). Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction. <i>Advanced Functional Materials</i>. <a href=\"https://doi.org/10.1002/adfm.202423702\">https://doi.org/10.1002/adfm.202423702</a>","short":"M.A. Zare Pour, S. Shekarabi, I.A. Ruiz Alvarado, J. Diederich, Y. Gao, A. Paszuk, D.C. Moritz, W. Jaegermann, D. Friedrich, R. van de Krol, W.G. Schmidt, T. Hannappel, Advanced Functional Materials (2025).","bibtex":"@article{Zare Pour_Shekarabi_Ruiz Alvarado_Diederich_Gao_Paszuk_Moritz_Jaegermann_Friedrich_van de Krol_et al._2025, title={Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction}, DOI={<a href=\"https://doi.org/10.1002/adfm.202423702\">10.1002/adfm.202423702</a>}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Zare Pour, Mohammad Amin and Shekarabi, Sahar and Ruiz Alvarado, Isaac Azahel and Diederich, Jonathan and Gao, Yuyings and Paszuk, Agnieszka and Moritz, Dominik C. and Jaegermann, Wolfram and Friedrich, Dennis and van de Krol, Roel and et al.}, year={2025} }","mla":"Zare Pour, Mohammad Amin, et al. “Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction.” <i>Advanced Functional Materials</i>, Wiley, 2025, doi:<a href=\"https://doi.org/10.1002/adfm.202423702\">10.1002/adfm.202423702</a>."},"publication_identifier":{"issn":["1616-301X","1616-3028"]},"publication_status":"published","title":"Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction","doi":"10.1002/adfm.202423702","date_updated":"2025-07-09T13:54:05Z","publisher":"Wiley","date_created":"2025-07-09T13:33:15Z","author":[{"full_name":"Zare Pour, Mohammad Amin","last_name":"Zare Pour","first_name":"Mohammad Amin"},{"last_name":"Shekarabi","full_name":"Shekarabi, Sahar","first_name":"Sahar"},{"first_name":"Isaac Azahel","orcid":"0000-0002-4710-1170","last_name":"Ruiz Alvarado","id":"79462","full_name":"Ruiz Alvarado, Isaac Azahel"},{"first_name":"Jonathan","last_name":"Diederich","full_name":"Diederich, Jonathan"},{"first_name":"Yuyings","last_name":"Gao","full_name":"Gao, Yuyings"},{"full_name":"Paszuk, Agnieszka","last_name":"Paszuk","first_name":"Agnieszka"},{"last_name":"Moritz","full_name":"Moritz, Dominik C.","first_name":"Dominik C."},{"last_name":"Jaegermann","full_name":"Jaegermann, Wolfram","first_name":"Wolfram"},{"first_name":"Dennis","last_name":"Friedrich","full_name":"Friedrich, Dennis"},{"full_name":"van de Krol, Roel","last_name":"van de Krol","first_name":"Roel"},{"last_name":"Schmidt","orcid":"0000-0002-2717-5076","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"first_name":"Thomas","full_name":"Hannappel, Thomas","last_name":"Hannappel"}],"abstract":[{"text":"<jats:title>Abstract</jats:title><jats:p>AlInP (001) is widely utilized as a window layer in optoelectronic devices, including world‐record III‐V multi‐junction solar cells and photoelectrochemical (PEC) cells. The chemical and electronic properties of AlInP (001) depend on its surface reconstruction, which impacts its interaction with electrolytes in PEC applications and passivation layers. This study investigates AlInP (001) surface reconstructions using density functional theory and experimental methods. Phosphorus‐rich (P‐rich) and indium‐rich (In‐rich) AlInP surfaces are prepared with in situ monitoring of the process by reflection anisotropy (RA) spectroscopy and confirmed by low‐energy electron diffraction and photoemission spectroscopy. The experimental RA spectra closely match the theoretical predictions obtained by solving the Bethe–Salpeter equation. It is shown that missing hydrogen on P‐rich surfaces and formation of In–In 1D atomic chains on In‐rich surfaces introduce mid‐gap surface states that pin the Fermi level and induce band bending. Time‐resolved two‐photon photoemission measurements reveal ultrafast near‐surface electron dynamics for both P‐rich and In‐rich surfaces, demonstrating photoexcited electrons reaching the surface conduction band minimum and relaxing to mid‐gap surface states on about hundreds of fs. This work provides the most extensive AlInP surface analysis to date, allowing for more targeted surface and interface engineering, which is crucial for the optimization and design of III‐V heterostructures.</jats:p>","lang":"eng"}],"status":"public","publication":"Advanced Functional Materials","type":"journal_article","language":[{"iso":"eng"}],"_id":"60580","department":[{"_id":"15"},{"_id":"170"},{"_id":"230"},{"_id":"27"},{"_id":"295"}],"user_id":"79462"},{"publication_identifier":{"issn":["1616-301X","1616-3028"]},"publication_status":"published","citation":{"bibtex":"@article{Zhao_Weinberger_Steube_Bauer_Brehm_Tiemann_2025, title={Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)}, DOI={<a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>}, number={e11190}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Zhao, Zhenyu and Weinberger, Christian and Steube, Jakob and Bauer, Matthias and Brehm, Martin and Tiemann, Michael}, year={2025} }","short":"Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, M. Tiemann, Advanced Functional Materials (2025).","mla":"Zhao, Zhenyu, et al. “Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76).” <i>Advanced Functional Materials</i>, e11190, Wiley, 2025, doi:<a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>.","ama":"Zhao Z, Weinberger C, Steube J, Bauer M, Brehm M, Tiemann M. Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76). <i>Advanced Functional Materials</i>. Published online 2025. doi:<a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>","apa":"Zhao, Z., Weinberger, C., Steube, J., Bauer, M., Brehm, M., &#38; Tiemann, M. (2025). Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76). <i>Advanced Functional Materials</i>, Article e11190. <a href=\"https://doi.org/10.1002/adfm.202511190\">https://doi.org/10.1002/adfm.202511190</a>","chicago":"Zhao, Zhenyu, Christian Weinberger, Jakob Steube, Matthias Bauer, Martin Brehm, and Michael Tiemann. “Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76).” <i>Advanced Functional Materials</i>, 2025. <a href=\"https://doi.org/10.1002/adfm.202511190\">https://doi.org/10.1002/adfm.202511190</a>.","ieee":"Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, and M. Tiemann, “Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76),” <i>Advanced Functional Materials</i>, Art. no. e11190, 2025, doi: <a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>."},"date_updated":"2025-07-29T07:02:22Z","oa":"1","author":[{"full_name":"Zhao, Zhenyu","last_name":"Zhao","first_name":"Zhenyu"},{"first_name":"Christian","last_name":"Weinberger","full_name":"Weinberger, Christian","id":"11848"},{"first_name":"Jakob","id":"40342","full_name":"Steube, Jakob","last_name":"Steube","orcid":"0000-0003-3178-4429"},{"first_name":"Matthias","id":"47241","full_name":"Bauer, Matthias","orcid":"0000-0002-9294-6076","last_name":"Bauer"},{"first_name":"Martin","last_name":"Brehm","full_name":"Brehm, Martin","id":"100167"},{"first_name":"Michael","id":"23547","full_name":"Tiemann, Michael","orcid":"0000-0003-1711-2722","last_name":"Tiemann"}],"doi":"10.1002/adfm.202511190","main_file_link":[{"open_access":"1"}],"type":"journal_article","status":"public","_id":"60815","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"user_id":"23547","article_type":"original","article_number":"e11190","quality_controlled":"1","year":"2025","publisher":"Wiley","date_created":"2025-07-29T06:59:19Z","title":"Fast‐Responding O<sub>2</sub> Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)","publication":"Advanced Functional Materials","abstract":[{"lang":"eng","text":"<jats:title>Abstract</jats:title><jats:p>The increasing demand for advanced sensing technologies drives the development of chemical sensors using innovative materials. In gas sensing, optical sensors are often used to detect gases such as CO, NO<jats:italic><jats:sub>x</jats:sub></jats:italic>, and O<jats:sub>2</jats:sub>. Oxygen sensors typically incorporate dyes into oxygen‐permeable matrices like polymers, silica, or zeolites. Alternatively, semiconductor surface chemistry can enable O<jats:sub>2</jats:sub> detection. However, these approaches are often limited by slow response and recovery times and low selectivity, restricting their practical applications. The metal‐organic framework MOF‐76(Eu) and its yttrium‐modified variant, MOF‐76(Eu/Y) are reported to exhibit highly reversible and fast optical responses to varying O<jats:sub>2</jats:sub> concentrations. Time‐resolved emission measurements are performed over short (seconds) and long (hours) timescales using N<jats:sub>2</jats:sub> and synthetic air mixtures. Cross‐sensitivity to humidity is analyzed. Multichannel scaling photon‐counting experiments confirm quenching at the linker level, as the emission lifetime remains nearly constant. Yttrium significantly improves stability and performance at room temperature. Structural and optical changes induced by yttrium are investigated. Additionally, MIL‐78(Eu), another Eu‐BTC‐based MOF with a different coordination environment, is synthesized. Unlike MOF‐76(Eu), MIL‐78(Eu) exhibits distinct optical properties but lacks a reversible response to O<jats:sub>2</jats:sub>. These results highlight the potential of MOF‐76‐based materials for high‐performance O<jats:sub>2</jats:sub> sensing.</jats:p>"}],"language":[{"iso":"eng"}]},{"publication_identifier":{"issn":["1616-301X","1616-3028"]},"quality_controlled":"1","publication_status":"published","year":"2025","citation":{"apa":"Zhao, Z., Weinberger, C., Steube, J., Bauer, M., Brehm, M., &#38; Tiemann, M. (2025). Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76). <i>Advanced Functional Materials</i>, Article e11190. <a href=\"https://doi.org/10.1002/adfm.202511190\">https://doi.org/10.1002/adfm.202511190</a>","mla":"Zhao, Zhenyu, et al. “Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76).” <i>Advanced Functional Materials</i>, e11190, Wiley, 2025, doi:<a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>.","bibtex":"@article{Zhao_Weinberger_Steube_Bauer_Brehm_Tiemann_2025, title={Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)}, DOI={<a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>}, number={e11190}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Zhao, Zhenyu and Weinberger, Christian and Steube, Jakob and Bauer, Matthias and Brehm, Martin and Tiemann, Michael}, year={2025} }","short":"Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, M. Tiemann, Advanced Functional Materials (2025).","ama":"Zhao Z, Weinberger C, Steube J, Bauer M, Brehm M, Tiemann M. Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76). <i>Advanced Functional Materials</i>. Published online 2025. doi:<a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>","chicago":"Zhao, Zhenyu, Christian Weinberger, Jakob Steube, Matthias Bauer, Martin Brehm, and Michael Tiemann. “Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76).” <i>Advanced Functional Materials</i>, 2025. <a href=\"https://doi.org/10.1002/adfm.202511190\">https://doi.org/10.1002/adfm.202511190</a>.","ieee":"Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, and M. Tiemann, “Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76),” <i>Advanced Functional Materials</i>, Art. no. e11190, 2025, doi: <a href=\"https://doi.org/10.1002/adfm.202511190\">10.1002/adfm.202511190</a>."},"publisher":"Wiley","oa":"1","date_updated":"2025-12-03T17:11:15Z","date_created":"2025-12-03T17:09:28Z","author":[{"full_name":"Zhao, Zhenyu","last_name":"Zhao","first_name":"Zhenyu"},{"first_name":"Christian","id":"11848","full_name":"Weinberger, Christian","last_name":"Weinberger"},{"id":"40342","full_name":"Steube, Jakob","last_name":"Steube","orcid":"0000-0003-3178-4429","first_name":"Jakob"},{"first_name":"Matthias","last_name":"Bauer","orcid":"0000-0002-9294-6076","full_name":"Bauer, Matthias","id":"47241"},{"last_name":"Brehm","id":"100167","full_name":"Brehm, Martin","first_name":"Martin"},{"orcid":"0000-0003-1711-2722","last_name":"Tiemann","full_name":"Tiemann, Michael","id":"23547","first_name":"Michael"}],"title":"Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)","doi":"10.1002/adfm.202511190","main_file_link":[{"open_access":"1"}],"publication":"Advanced Functional Materials","type":"journal_article","abstract":[{"lang":"eng","text":"The increasing demand for advanced sensing technologies drives the development of chemical sensors using innovative materials. In gas sensing, optical sensors are often used to detect gases such as CO, NOx, and O2. Oxygen sensors typically incorporate dyes into oxygen-permeable matrices like polymers, silica, or zeolites. Alternatively, semiconductor surface chemistry can enable O2 detection. However, these approaches are often limited by slow response and recovery times and low selectivity, restricting their practical applications. The metal-organic framework MOF-76(Eu) and its yttrium-modified variant, MOF-76(Eu/Y) are reported to exhibit highly reversible and fast optical responses to varying O2 concentrations. Time-resolved emission measurements are performed over short (seconds) and long (hours) timescales using N2 and synthetic air mixtures. Cross-sensitivity to humidity is analyzed. Multichannel scaling photon-counting experiments confirm quenching at the linker level, as the emission lifetime remains nearly constant. Yttrium significantly improves stability and performance at room temperature. Structural and optical changes induced by yttrium are investigated. Additionally, MIL-78(Eu), another Eu-BTC-based MOF with a different coordination environment, is synthesized. Unlike MOF-76(Eu), MIL-78(Eu) exhibits distinct optical properties but lacks a reversible response to O2. These results highlight the potential of MOF-76-based materials for high-performance O2 sensing."}],"status":"public","_id":"62816","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"user_id":"23547","article_number":"e11190","language":[{"iso":"eng"}]},{"publisher":"Wiley","date_updated":"2025-12-05T14:18:27Z","author":[{"last_name":"Patra","full_name":"Patra, Atanu","first_name":"Atanu"},{"first_name":"Paul","last_name":"Konrad","full_name":"Konrad, Paul"},{"full_name":"Sperlich, Andreas","last_name":"Sperlich","first_name":"Andreas"},{"first_name":"Timur","id":"65612","full_name":"Biktagirov, Timur","last_name":"Biktagirov"},{"full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"last_name":"Spencer","full_name":"Spencer, Lesley","first_name":"Lesley"},{"last_name":"Aharonovich","full_name":"Aharonovich, Igor","first_name":"Igor"},{"last_name":"Höfling","full_name":"Höfling, Sven","first_name":"Sven"},{"first_name":"Vladimir","full_name":"Dyakonov, Vladimir","last_name":"Dyakonov"}],"date_created":"2025-12-05T14:15:35Z","title":"Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis","doi":"10.1002/adfm.202517851","publication_identifier":{"issn":["1616-301X","1616-3028"]},"publication_status":"published","year":"2025","citation":{"apa":"Patra, A., Konrad, P., Sperlich, A., Biktagirov, T., Schmidt, W. G., Spencer, L., Aharonovich, I., Höfling, S., &#38; Dyakonov, V. (2025). Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis. <i>Advanced Functional Materials</i>, Article e17851. <a href=\"https://doi.org/10.1002/adfm.202517851\">https://doi.org/10.1002/adfm.202517851</a>","mla":"Patra, Atanu, et al. “Quantifying Spin Defect Density in HBN via Raman and Photoluminescence Analysis.” <i>Advanced Functional Materials</i>, e17851, Wiley, 2025, doi:<a href=\"https://doi.org/10.1002/adfm.202517851\">10.1002/adfm.202517851</a>.","short":"A. Patra, P. Konrad, A. Sperlich, T. Biktagirov, W.G. Schmidt, L. Spencer, I. Aharonovich, S. Höfling, V. Dyakonov, Advanced Functional Materials (2025).","bibtex":"@article{Patra_Konrad_Sperlich_Biktagirov_Schmidt_Spencer_Aharonovich_Höfling_Dyakonov_2025, title={Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis}, DOI={<a href=\"https://doi.org/10.1002/adfm.202517851\">10.1002/adfm.202517851</a>}, number={e17851}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Patra, Atanu and Konrad, Paul and Sperlich, Andreas and Biktagirov, Timur and Schmidt, Wolf Gero and Spencer, Lesley and Aharonovich, Igor and Höfling, Sven and Dyakonov, Vladimir}, year={2025} }","ieee":"A. Patra <i>et al.</i>, “Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis,” <i>Advanced Functional Materials</i>, Art. no. e17851, 2025, doi: <a href=\"https://doi.org/10.1002/adfm.202517851\">10.1002/adfm.202517851</a>.","chicago":"Patra, Atanu, Paul Konrad, Andreas Sperlich, Timur Biktagirov, Wolf Gero Schmidt, Lesley Spencer, Igor Aharonovich, Sven Höfling, and Vladimir Dyakonov. “Quantifying Spin Defect Density in HBN via Raman and Photoluminescence Analysis.” <i>Advanced Functional Materials</i>, 2025. <a href=\"https://doi.org/10.1002/adfm.202517851\">https://doi.org/10.1002/adfm.202517851</a>.","ama":"Patra A, Konrad P, Sperlich A, et al. Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis. <i>Advanced Functional Materials</i>. Published online 2025. doi:<a href=\"https://doi.org/10.1002/adfm.202517851\">10.1002/adfm.202517851</a>"},"_id":"62926","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","article_number":"e17851","language":[{"iso":"eng"}],"publication":"Advanced Functional Materials","type":"journal_article","abstract":[{"text":"<jats:title>Abstract</jats:title>\r\n                  <jats:p>\r\n                    Negatively charged boron vacancies () in hexagonal boron nitride (hBN) are emerging as promising solid‐state spin qubits due to their optical accessibility, structural simplicity, and compatibility with photonic platforms. However, quantifying the density of such defects in thin hBN flakes has remained elusive, limiting progress in device integration and reproducibility. Here, an all‐optical method is presented to quantify  defect density in hBN by correlating Raman and photoluminescence (PL) signatures with irradiation fluence. Two defect‐induced Raman modes, D1 and D2, are identified and assigned them to vibrational modes of  using polarization‐resolved Raman measurements and density functional theory (DFT) calculations. By adapting a numerical model originally developed for graphene, an empirical relationship linking Raman (D1,\r\n                    <jats:italic>E</jats:italic>\r\n                    <jats:sub>2g</jats:sub>\r\n                    ) and PL intensities is established to absolute defect densities. This method is universally applicable across various irradiation types and uniquely suited for thin flakes, where conventional techniques fail. The approach enables accurate, direct, and non‐destructive quantification of spin defect densities down to 10\r\n                    <jats:sup>15</jats:sup>\r\n                     defects/cm\r\n                    <jats:sup>3</jats:sup>\r\n                    , offering a powerful tool for optimizing and benchmarking hBN for quantum optical applications.\r\n                  </jats:p>","lang":"eng"}],"status":"public"},{"issue":"49","publication_identifier":{"issn":["1616-301X","1616-3028"]},"publication_status":"published","intvolume":"        34","citation":{"apa":"Diederich, J., Rojas, J. V., Paszuk, A., Pour, M. A. Z., Höhn, C., Alvarado, I. A. R., Schwarzburg, K., Ostheimer, D., Eichberger, R., Schmidt, W. G., Hannappel, T., van de Krol, R., &#38; Friedrich, D. (2024). Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface. <i>Advanced Functional Materials</i>, <i>34</i>(49), Article 2409455. <a href=\"https://doi.org/10.1002/adfm.202409455\">https://doi.org/10.1002/adfm.202409455</a>","bibtex":"@article{Diederich_Rojas_Paszuk_Pour_Höhn_Alvarado_Schwarzburg_Ostheimer_Eichberger_Schmidt_et al._2024, title={Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface}, volume={34}, DOI={<a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>}, number={492409455}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Diederich, Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka and Pour, Mohammad Amin Zare and Höhn, Christian and Alvarado, Isaac Azahel Ruiz and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt, Wolf Gero and et al.}, year={2024} }","short":"J. Diederich, J.V. Rojas, A. Paszuk, M.A.Z. Pour, C. Höhn, I.A.R. Alvarado, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van de Krol, D. Friedrich, Advanced Functional Materials 34 (2024).","mla":"Diederich, Jonathan, et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface.” <i>Advanced Functional Materials</i>, vol. 34, no. 49, 2409455, Wiley, 2024, doi:<a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>.","chicago":"Diederich, Jonathan, Jennifer Velazquez Rojas, Agnieszka Paszuk, Mohammad Amin Zare Pour, Christian Höhn, Isaac Azahel Ruiz Alvarado, Klaus Schwarzburg, et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface.” <i>Advanced Functional Materials</i> 34, no. 49 (2024). <a href=\"https://doi.org/10.1002/adfm.202409455\">https://doi.org/10.1002/adfm.202409455</a>.","ieee":"J. Diederich <i>et al.</i>, “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface,” <i>Advanced Functional Materials</i>, vol. 34, no. 49, Art. no. 2409455, 2024, doi: <a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>.","ama":"Diederich J, Rojas JV, Paszuk A, et al. Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface. <i>Advanced Functional Materials</i>. 2024;34(49). doi:<a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>"},"year":"2024","volume":34,"date_created":"2025-09-18T11:37:51Z","author":[{"full_name":"Diederich, Jonathan","last_name":"Diederich","first_name":"Jonathan"},{"first_name":"Jennifer Velazquez","full_name":"Rojas, Jennifer Velazquez","last_name":"Rojas"},{"first_name":"Agnieszka","full_name":"Paszuk, Agnieszka","last_name":"Paszuk"},{"first_name":"Mohammad Amin Zare","full_name":"Pour, Mohammad Amin Zare","last_name":"Pour"},{"first_name":"Christian","last_name":"Höhn","full_name":"Höhn, Christian"},{"first_name":"Isaac Azahel Ruiz","full_name":"Alvarado, Isaac Azahel Ruiz","last_name":"Alvarado"},{"full_name":"Schwarzburg, Klaus","last_name":"Schwarzburg","first_name":"Klaus"},{"last_name":"Ostheimer","full_name":"Ostheimer, David","first_name":"David"},{"first_name":"Rainer","full_name":"Eichberger, Rainer","last_name":"Eichberger"},{"first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","id":"468","orcid":"0000-0002-2717-5076","last_name":"Schmidt"},{"last_name":"Hannappel","full_name":"Hannappel, Thomas","first_name":"Thomas"},{"first_name":"Roel","last_name":"van de Krol","full_name":"van de Krol, Roel"},{"full_name":"Friedrich, Dennis","last_name":"Friedrich","first_name":"Dennis"}],"publisher":"Wiley","date_updated":"2025-12-05T13:35:09Z","doi":"10.1002/adfm.202409455","title":"Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface","publication":"Advanced Functional Materials","type":"journal_article","status":"public","abstract":[{"lang":"eng","text":"<jats:title>Abstract</jats:title><jats:p>The current efficiency records for generating green hydrogen via solar water splitting are held by indium phosphide (InP)‐based photo‐absorbers, protected by TiO<jats:sub>2</jats:sub> layers grown through atomic layer deposition (ALD). InP is also a leading material for photonic integrated circuits and computing, where ultrafast near‐surface behavior is key. A previous study described electronic pathways at the phosphorus‐rich (P‐rich) surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE) spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface modified with ALD‐deposited TiO<jats:sub>2</jats:sub> are explored. Photoexcited bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states and surface states and inject into the TiO<jats:sub>2</jats:sub> conduction band (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO<jats:sub>2</jats:sub> adlayers are observed, with discrete states preserved up to 10 nm TiO<jats:sub>2</jats:sub> deposition. Thermalization lifetimes of excited electrons &gt; 0.8 eV above the InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm. Annealing at 300 °C to achieve crystalline TiO<jats:sub>2</jats:sub> reconstructions destroys interfacial states, affecting charge transfer. These observations enable innovative engineering of the P‐rich InP/TiO<jats:sub>2</jats:sub> heterointerface, opening new possibilities for studying hot‐carrier extraction, adsorbate effects, surface plasmons, and improving photovoltaic and PEC water‐splitting devices.</jats:p>"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"user_id":"16199","_id":"61359","language":[{"iso":"eng"}],"article_number":"2409455"},{"status":"public","type":"journal_article","article_type":"original","_id":"60582","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"27"},{"_id":"35"}],"user_id":"16199","intvolume":"        34","citation":{"apa":"Diederich, J., Rojas, J. V., Paszuk, A., Pour, M. A. Z., Höhn, C., Ruiz Alvarado, I. A., Schwarzburg, K., Ostheimer, D., Eichberger, R., Schmidt, W. G., Hannappel, T., van de Krol, R., &#38; Friedrich, D. (2024). Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface. <i>Advanced Functional Materials</i>, <i>34</i>(49). <a href=\"https://doi.org/10.1002/adfm.202409455\">https://doi.org/10.1002/adfm.202409455</a>","bibtex":"@article{Diederich_Rojas_Paszuk_Pour_Höhn_Ruiz Alvarado_Schwarzburg_Ostheimer_Eichberger_Schmidt_et al._2024, title={Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface}, volume={34}, DOI={<a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>}, number={49}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Diederich, Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka and Pour, Mohammad Amin Zare and Höhn, Christian and Ruiz Alvarado, Isaac Azahel and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt, Wolf Gero and et al.}, year={2024} }","short":"J. Diederich, J.V. Rojas, A. Paszuk, M.A.Z. Pour, C. Höhn, I.A. Ruiz Alvarado, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van de Krol, D. Friedrich, Advanced Functional Materials 34 (2024).","mla":"Diederich, Jonathan, et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface.” <i>Advanced Functional Materials</i>, vol. 34, no. 49, Wiley, 2024, doi:<a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>.","chicago":"Diederich, Jonathan, Jennifer Velazquez Rojas, Agnieszka Paszuk, Mohammad Amin Zare Pour, Christian Höhn, Isaac Azahel Ruiz Alvarado, Klaus Schwarzburg, et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface.” <i>Advanced Functional Materials</i> 34, no. 49 (2024). <a href=\"https://doi.org/10.1002/adfm.202409455\">https://doi.org/10.1002/adfm.202409455</a>.","ieee":"J. Diederich <i>et al.</i>, “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface,” <i>Advanced Functional Materials</i>, vol. 34, no. 49, 2024, doi: <a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>.","ama":"Diederich J, Rojas JV, Paszuk A, et al. Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface. <i>Advanced Functional Materials</i>. 2024;34(49). doi:<a href=\"https://doi.org/10.1002/adfm.202409455\">10.1002/adfm.202409455</a>"},"publication_identifier":{"issn":["1616-301X","1616-3028"]},"publication_status":"published","doi":"10.1002/adfm.202409455","date_updated":"2025-12-05T13:39:54Z","volume":34,"author":[{"first_name":"Jonathan","full_name":"Diederich, Jonathan","last_name":"Diederich"},{"first_name":"Jennifer Velazquez","last_name":"Rojas","full_name":"Rojas, Jennifer Velazquez"},{"full_name":"Paszuk, Agnieszka","last_name":"Paszuk","first_name":"Agnieszka"},{"last_name":"Pour","full_name":"Pour, Mohammad Amin Zare","first_name":"Mohammad Amin Zare"},{"first_name":"Christian","last_name":"Höhn","full_name":"Höhn, Christian"},{"first_name":"Isaac Azahel","orcid":"0000-0002-4710-1170","last_name":"Ruiz Alvarado","id":"79462","full_name":"Ruiz Alvarado, Isaac Azahel"},{"full_name":"Schwarzburg, Klaus","last_name":"Schwarzburg","first_name":"Klaus"},{"full_name":"Ostheimer, David","last_name":"Ostheimer","first_name":"David"},{"first_name":"Rainer","full_name":"Eichberger, Rainer","last_name":"Eichberger"},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"},{"first_name":"Thomas","last_name":"Hannappel","full_name":"Hannappel, Thomas"},{"first_name":"Roel","full_name":"van de Krol, Roel","last_name":"van de Krol"},{"first_name":"Dennis","full_name":"Friedrich, Dennis","last_name":"Friedrich"}],"abstract":[{"text":"<jats:title>Abstract</jats:title><jats:p>The current efficiency records for generating green hydrogen via solar water splitting are held by indium phosphide (InP)‐based photo‐absorbers, protected by TiO<jats:sub>2</jats:sub> layers grown through atomic layer deposition (ALD). InP is also a leading material for photonic integrated circuits and computing, where ultrafast near‐surface behavior is key. A previous study described electronic pathways at the phosphorus‐rich (P‐rich) surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE) spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface modified with ALD‐deposited TiO<jats:sub>2</jats:sub> are explored. Photoexcited bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states and surface states and inject into the TiO<jats:sub>2</jats:sub> conduction band (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO<jats:sub>2</jats:sub> adlayers are observed, with discrete states preserved up to 10 nm TiO<jats:sub>2</jats:sub> deposition. Thermalization lifetimes of excited electrons &gt; 0.8 eV above the InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm. Annealing at 300 °C to achieve crystalline TiO<jats:sub>2</jats:sub> reconstructions destroys interfacial states, affecting charge transfer. These observations enable innovative engineering of the P‐rich InP/TiO<jats:sub>2</jats:sub> heterointerface, opening new possibilities for studying hot‐carrier extraction, adsorbate effects, surface plasmons, and improving photovoltaic and PEC water‐splitting devices.</jats:p>","lang":"eng"}],"publication":"Advanced Functional Materials","language":[{"iso":"eng"}],"year":"2024","issue":"49","title":"Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO<sub>2</sub> Interface","publisher":"Wiley","date_created":"2025-07-09T13:47:37Z"},{"issue":"20","publication_status":"published","publication_identifier":{"issn":["1616-301X","1616-3028"]},"citation":{"ama":"Khazaei M, Ranjbar A, Kang Y, et al. Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators. <i>Advanced Functional Materials</i>. 2022;32(20). doi:<a href=\"https://doi.org/10.1002/adfm.202110930\">10.1002/adfm.202110930</a>","chicago":"Khazaei, Mohammad, Ahmad Ranjbar, Yoon‐Gu Kang, Yunye Liang, Rasoul Khaledialidusti, Soungmin Bae, Hannes Raebiger, et al. “Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators.” <i>Advanced Functional Materials</i> 32, no. 20 (2022). <a href=\"https://doi.org/10.1002/adfm.202110930\">https://doi.org/10.1002/adfm.202110930</a>.","ieee":"M. Khazaei <i>et al.</i>, “Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators,” <i>Advanced Functional Materials</i>, vol. 32, no. 20, Art. no. 2110930, 2022, doi: <a href=\"https://doi.org/10.1002/adfm.202110930\">10.1002/adfm.202110930</a>.","mla":"Khazaei, Mohammad, et al. “Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators.” <i>Advanced Functional Materials</i>, vol. 32, no. 20, 2110930, Wiley, 2022, doi:<a href=\"https://doi.org/10.1002/adfm.202110930\">10.1002/adfm.202110930</a>.","bibtex":"@article{Khazaei_Ranjbar_Kang_Liang_Khaledialidusti_Bae_Raebiger_Wang_Han_Mizoguchi_et al._2022, title={Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators}, volume={32}, DOI={<a href=\"https://doi.org/10.1002/adfm.202110930\">10.1002/adfm.202110930</a>}, number={202110930}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Khazaei, Mohammad and Ranjbar, Ahmad and Kang, Yoon‐Gu and Liang, Yunye and Khaledialidusti, Rasoul and Bae, Soungmin and Raebiger, Hannes and Wang, Vei and Han, Myung Joon and Mizoguchi, Hiroshi and et al.}, year={2022} }","short":"M. Khazaei, A. Ranjbar, Y. Kang, Y. Liang, R. Khaledialidusti, S. Bae, H. Raebiger, V. Wang, M.J. Han, H. Mizoguchi, M.S. Bahramy, T. Kühne, R.V. Belosludov, K. Ohno, H. Hosono, Advanced Functional Materials 32 (2022).","apa":"Khazaei, M., Ranjbar, A., Kang, Y., Liang, Y., Khaledialidusti, R., Bae, S., Raebiger, H., Wang, V., Han, M. J., Mizoguchi, H., Bahramy, M. S., Kühne, T., Belosludov, R. V., Ohno, K., &#38; Hosono, H. (2022). Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators. <i>Advanced Functional Materials</i>, <i>32</i>(20), Article 2110930. <a href=\"https://doi.org/10.1002/adfm.202110930\">https://doi.org/10.1002/adfm.202110930</a>"},"intvolume":"        32","year":"2022","date_created":"2022-10-11T08:15:11Z","author":[{"first_name":"Mohammad","full_name":"Khazaei, Mohammad","last_name":"Khazaei"},{"full_name":"Ranjbar, Ahmad","last_name":"Ranjbar","first_name":"Ahmad"},{"first_name":"Yoon‐Gu","full_name":"Kang, Yoon‐Gu","last_name":"Kang"},{"first_name":"Yunye","full_name":"Liang, Yunye","last_name":"Liang"},{"last_name":"Khaledialidusti","full_name":"Khaledialidusti, Rasoul","first_name":"Rasoul"},{"first_name":"Soungmin","full_name":"Bae, Soungmin","last_name":"Bae"},{"full_name":"Raebiger, Hannes","last_name":"Raebiger","first_name":"Hannes"},{"full_name":"Wang, Vei","last_name":"Wang","first_name":"Vei"},{"first_name":"Myung Joon","full_name":"Han, Myung Joon","last_name":"Han"},{"first_name":"Hiroshi","full_name":"Mizoguchi, Hiroshi","last_name":"Mizoguchi"},{"first_name":"Mohammad S.","last_name":"Bahramy","full_name":"Bahramy, Mohammad S."},{"first_name":"Thomas","last_name":"Kühne","full_name":"Kühne, Thomas","id":"49079"},{"first_name":"Rodion V.","full_name":"Belosludov, Rodion V.","last_name":"Belosludov"},{"full_name":"Ohno, Kaoru","last_name":"Ohno","first_name":"Kaoru"},{"last_name":"Hosono","full_name":"Hosono, Hideo","first_name":"Hideo"}],"volume":32,"date_updated":"2022-10-11T08:15:28Z","publisher":"Wiley","doi":"10.1002/adfm.202110930","title":"Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators","type":"journal_article","publication":"Advanced Functional Materials","status":"public","user_id":"71051","department":[{"_id":"613"}],"_id":"33682","language":[{"iso":"eng"}],"article_number":"2110930","keyword":["Electrochemistry","Condensed Matter Physics","Biomaterials","Electronic","Optical and Magnetic Materials"]},{"_id":"23601","department":[{"_id":"633"}],"user_id":"84268","language":[{"iso":"eng"}],"publication":"Advanced Functional Materials","type":"journal_article","status":"public","date_updated":"2022-01-06T06:55:57Z","volume":30,"author":[{"last_name":"Abdelsamie","full_name":"Abdelsamie, Maged","first_name":"Maged"},{"first_name":"Junwei","full_name":"Xu, Junwei","last_name":"Xu"},{"full_name":"Bruening, Karsten","last_name":"Bruening","first_name":"Karsten"},{"full_name":"Tassone, Christopher J.","last_name":"Tassone","first_name":"Christopher J."},{"full_name":"Steinrück, Hans-Georg","id":"84268","last_name":"Steinrück","orcid":"0000-0001-6373-0877","first_name":"Hans-Georg"},{"first_name":"Michael F.","full_name":"Toney, Michael F.","last_name":"Toney"}],"date_created":"2021-09-01T09:08:01Z","title":"Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation","doi":"10.1002/adfm.202001752","publication_identifier":{"issn":["1616-301X","1616-3028"]},"publication_status":"published","year":"2020","intvolume":"        30","page":"2001752","citation":{"ama":"Abdelsamie M, Xu J, Bruening K, Tassone CJ, Steinrück H-G, Toney MF. Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation. <i>Advanced Functional Materials</i>. 2020;30:2001752. doi:<a href=\"https://doi.org/10.1002/adfm.202001752\">10.1002/adfm.202001752</a>","chicago":"Abdelsamie, Maged, Junwei Xu, Karsten Bruening, Christopher J. Tassone, Hans-Georg Steinrück, and Michael F. Toney. “Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation.” <i>Advanced Functional Materials</i> 30 (2020): 2001752. <a href=\"https://doi.org/10.1002/adfm.202001752\">https://doi.org/10.1002/adfm.202001752</a>.","ieee":"M. Abdelsamie, J. Xu, K. Bruening, C. J. Tassone, H.-G. Steinrück, and M. F. Toney, “Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation,” <i>Advanced Functional Materials</i>, vol. 30, p. 2001752, 2020, doi: <a href=\"https://doi.org/10.1002/adfm.202001752\">10.1002/adfm.202001752</a>.","mla":"Abdelsamie, Maged, et al. “Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation.” <i>Advanced Functional Materials</i>, vol. 30, 2020, p. 2001752, doi:<a href=\"https://doi.org/10.1002/adfm.202001752\">10.1002/adfm.202001752</a>.","short":"M. Abdelsamie, J. Xu, K. Bruening, C.J. Tassone, H.-G. Steinrück, M.F. Toney, Advanced Functional Materials 30 (2020) 2001752.","bibtex":"@article{Abdelsamie_Xu_Bruening_Tassone_Steinrück_Toney_2020, title={Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation}, volume={30}, DOI={<a href=\"https://doi.org/10.1002/adfm.202001752\">10.1002/adfm.202001752</a>}, journal={Advanced Functional Materials}, author={Abdelsamie, Maged and Xu, Junwei and Bruening, Karsten and Tassone, Christopher J. and Steinrück, Hans-Georg and Toney, Michael F.}, year={2020}, pages={2001752} }","apa":"Abdelsamie, M., Xu, J., Bruening, K., Tassone, C. J., Steinrück, H.-G., &#38; Toney, M. F. (2020). Impact of Processing on Structural and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation. <i>Advanced Functional Materials</i>, <i>30</i>, 2001752. <a href=\"https://doi.org/10.1002/adfm.202001752\">https://doi.org/10.1002/adfm.202001752</a>"}},{"publication_status":"published","publication_identifier":{"issn":["1616-301X","1616-3028"]},"quality_controlled":"1","citation":{"mla":"Paul, Andrej, et al. “Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection.” <i>Advanced Functional Materials</i>, 1904505, 2019, doi:<a href=\"https://doi.org/10.1002/adfm.201904505\">10.1002/adfm.201904505</a>.","bibtex":"@article{Paul_Schwind_Weinberger_Tiemann_Wagner_2019, title={Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection}, DOI={<a href=\"https://doi.org/10.1002/adfm.201904505\">10.1002/adfm.201904505</a>}, number={1904505}, journal={Advanced Functional Materials}, author={Paul, Andrej and Schwind, Bertram and Weinberger, Christian and Tiemann, Michael and Wagner, Thorsten}, year={2019} }","short":"A. Paul, B. Schwind, C. Weinberger, M. Tiemann, T. Wagner, Advanced Functional Materials (2019).","apa":"Paul, A., Schwind, B., Weinberger, C., Tiemann, M., &#38; Wagner, T. (2019). Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection. <i>Advanced Functional Materials</i>, Article 1904505. <a href=\"https://doi.org/10.1002/adfm.201904505\">https://doi.org/10.1002/adfm.201904505</a>","chicago":"Paul, Andrej, Bertram Schwind, Christian Weinberger, Michael Tiemann, and Thorsten Wagner. “Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection.” <i>Advanced Functional Materials</i>, 2019. <a href=\"https://doi.org/10.1002/adfm.201904505\">https://doi.org/10.1002/adfm.201904505</a>.","ieee":"A. Paul, B. Schwind, C. Weinberger, M. Tiemann, and T. Wagner, “Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection,” <i>Advanced Functional Materials</i>, Art. no. 1904505, 2019, doi: <a href=\"https://doi.org/10.1002/adfm.201904505\">10.1002/adfm.201904505</a>.","ama":"Paul A, Schwind B, Weinberger C, Tiemann M, Wagner T. Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection. <i>Advanced Functional Materials</i>. Published online 2019. doi:<a href=\"https://doi.org/10.1002/adfm.201904505\">10.1002/adfm.201904505</a>"},"year":"2019","author":[{"first_name":"Andrej","full_name":"Paul, Andrej","last_name":"Paul"},{"full_name":"Schwind, Bertram","last_name":"Schwind","first_name":"Bertram"},{"first_name":"Christian","id":"11848","full_name":"Weinberger, Christian","last_name":"Weinberger"},{"first_name":"Michael","last_name":"Tiemann","orcid":"0000-0003-1711-2722","id":"23547","full_name":"Tiemann, Michael"},{"first_name":"Thorsten","full_name":"Wagner, Thorsten","last_name":"Wagner"}],"date_created":"2021-10-08T10:42:50Z","oa":"1","date_updated":"2023-03-22T09:11:49Z","main_file_link":[{"open_access":"1","url":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.201904505"}],"doi":"10.1002/adfm.201904505","title":"Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection","type":"journal_article","publication":"Advanced Functional Materials","status":"public","abstract":[{"lang":"eng","text":"A nanocomposite material based on copper(II) oxide (CuO) and its utilization as a highly selective and stable gas-responsive electrical switch for hydrogen sulphide (H2S) detection is presented. The material can be applied as a sensitive layer for H2S monitoring, e.g., in biogas gas plants. CuO nanoparticles are embedded in a rigid, nanoporous silica (SiO2) matrix to form an electrical percolating network of low conducting CuO and, upon exposure to H2S, highly conducting copper(II) sulphide (CuS) particles. By steric hindrance due to the silica pore walls, the structure of the network is maintained even though the reversible reaction of CuO to CuS is accompanied by significant volume expansion. The conducting state of the percolating network can be controlled by a variety of parameters, such as temperature, electrode layout, and network topology of the porous silica matrix. The latter means that this new type of sensing material has a structure-encoded detection limit for H2S, which offers new application opportunities. The fabrication process of the mesoporous CuO@SiO2 composite as well as the sensor design and characteristics are described in detail. In addition, theoretical modeling of the percolation effect by Monte-Carlo simulations yields deeper insight into the underlying percolation mechanism and the observed response characteristics."}],"user_id":"23547","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"_id":"25905","language":[{"iso":"eng"}],"article_number":"1904505","article_type":"original"},{"year":"2009","citation":{"ama":"Di Noto V, Boeer AB, Lavina S, et al. Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications. <i>Advanced Functional Materials</i>. 2009;19(20):3226-3236. doi:<a href=\"https://doi.org/10.1002/adfm.200900600\">10.1002/adfm.200900600</a>","chicago":"Di Noto, Vito, Angelika B. Boeer, Sandra Lavina, Christopher A. Muryn, Matthias Bauer, Grigore A. Timco, Enrico Negro, Marzio Rancan, Richard E. P. Winpenny, and Silvia Gross. “Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications.” <i>Advanced Functional Materials</i> 19, no. 20 (2009): 3226–36. <a href=\"https://doi.org/10.1002/adfm.200900600\">https://doi.org/10.1002/adfm.200900600</a>.","ieee":"V. Di Noto <i>et al.</i>, “Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications,” <i>Advanced Functional Materials</i>, vol. 19, no. 20, pp. 3226–3236, 2009, doi: <a href=\"https://doi.org/10.1002/adfm.200900600\">10.1002/adfm.200900600</a>.","apa":"Di Noto, V., Boeer, A. B., Lavina, S., Muryn, C. A., Bauer, M., Timco, G. A., Negro, E., Rancan, M., Winpenny, R. E. P., &#38; Gross, S. (2009). Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications. <i>Advanced Functional Materials</i>, <i>19</i>(20), 3226–3236. <a href=\"https://doi.org/10.1002/adfm.200900600\">https://doi.org/10.1002/adfm.200900600</a>","mla":"Di Noto, Vito, et al. “Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications.” <i>Advanced Functional Materials</i>, vol. 19, no. 20, Wiley, 2009, pp. 3226–36, doi:<a href=\"https://doi.org/10.1002/adfm.200900600\">10.1002/adfm.200900600</a>.","bibtex":"@article{Di Noto_Boeer_Lavina_Muryn_Bauer_Timco_Negro_Rancan_Winpenny_Gross_2009, title={Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications}, volume={19}, DOI={<a href=\"https://doi.org/10.1002/adfm.200900600\">10.1002/adfm.200900600</a>}, number={20}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Di Noto, Vito and Boeer, Angelika B. and Lavina, Sandra and Muryn, Christopher A. and Bauer, Matthias and Timco, Grigore A. and Negro, Enrico and Rancan, Marzio and Winpenny, Richard E. P. and Gross, Silvia}, year={2009}, pages={3226–3236} }","short":"V. Di Noto, A.B. Boeer, S. Lavina, C.A. Muryn, M. Bauer, G.A. Timco, E. Negro, M. Rancan, R.E.P. Winpenny, S. Gross, Advanced Functional Materials 19 (2009) 3226–3236."},"page":"3226-3236","intvolume":"        19","publication_status":"published","publication_identifier":{"issn":["1616-301X","1616-3028"]},"issue":"20","title":"Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications","doi":"10.1002/adfm.200900600","publisher":"Wiley","date_updated":"2023-01-31T15:06:24Z","date_created":"2023-01-31T15:06:12Z","author":[{"last_name":"Di Noto","full_name":"Di Noto, Vito","first_name":"Vito"},{"first_name":"Angelika B.","full_name":"Boeer, Angelika B.","last_name":"Boeer"},{"full_name":"Lavina, Sandra","last_name":"Lavina","first_name":"Sandra"},{"full_name":"Muryn, Christopher A.","last_name":"Muryn","first_name":"Christopher A."},{"first_name":"Matthias","last_name":"Bauer","orcid":"0000-0002-9294-6076","id":"47241","full_name":"Bauer, Matthias"},{"first_name":"Grigore A.","full_name":"Timco, Grigore A.","last_name":"Timco"},{"full_name":"Negro, Enrico","last_name":"Negro","first_name":"Enrico"},{"first_name":"Marzio","full_name":"Rancan, Marzio","last_name":"Rancan"},{"last_name":"Winpenny","full_name":"Winpenny, Richard E. P.","first_name":"Richard E. P."},{"first_name":"Silvia","last_name":"Gross","full_name":"Gross, Silvia"}],"volume":19,"status":"public","type":"journal_article","publication":"Advanced Functional Materials","keyword":["Electrochemistry","Condensed Matter Physics","Biomaterials","Electronic","Optical and Magnetic Materials"],"language":[{"iso":"eng"}],"_id":"41272","user_id":"48467","department":[{"_id":"306"}]},{"type":"journal_article","publication":"Advanced Functional Materials","status":"public","abstract":[{"lang":"eng","text":"The synthesis and characterization of ordered mesoporous In2O3 materials by structure replication from hexagonal mesoporous SBA-15 silica and cubic KIT-6 silica is presented. Variation of the synthesis parameters allows for different pore sizes and pore wall thicknesses in the products. The In2O3 samples turn out to be stable up to temperatures between 450 °C and 650 °C; such high thermal stability is necessary for their application as gas sensors. Test measurements show a high sensitivity to methane gas in concentrations relevant for explosion prevention. The sensitivity is shown to be correlated not only with the surface-to-volume ratio, but also with the nanoscopic structural properties of the materials."}],"user_id":"23547","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"_id":"25975","extern":"1","language":[{"iso":"eng"}],"article_type":"original","publication_status":"published","quality_controlled":"1","publication_identifier":{"issn":["1616-301X","1616-3028"]},"citation":{"apa":"Waitz, T., Wagner, T., Sauerwald, T., Kohl, C.-D., &#38; Tiemann, M. (2009). Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor. <i>Advanced Functional Materials</i>, 653–661. <a href=\"https://doi.org/10.1002/adfm.200801458\">https://doi.org/10.1002/adfm.200801458</a>","bibtex":"@article{Waitz_Wagner_Sauerwald_Kohl_Tiemann_2009, title={Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor}, DOI={<a href=\"https://doi.org/10.1002/adfm.200801458\">10.1002/adfm.200801458</a>}, journal={Advanced Functional Materials}, author={Waitz, Thomas and Wagner, Thorsten and Sauerwald, Tilman and Kohl, Claus-Dieter and Tiemann, Michael}, year={2009}, pages={653–661} }","short":"T. Waitz, T. Wagner, T. Sauerwald, C.-D. Kohl, M. Tiemann, Advanced Functional Materials (2009) 653–661.","mla":"Waitz, Thomas, et al. “Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor.” <i>Advanced Functional Materials</i>, 2009, pp. 653–61, doi:<a href=\"https://doi.org/10.1002/adfm.200801458\">10.1002/adfm.200801458</a>.","ieee":"T. Waitz, T. Wagner, T. Sauerwald, C.-D. Kohl, and M. Tiemann, “Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor,” <i>Advanced Functional Materials</i>, pp. 653–661, 2009, doi: <a href=\"https://doi.org/10.1002/adfm.200801458\">10.1002/adfm.200801458</a>.","chicago":"Waitz, Thomas, Thorsten Wagner, Tilman Sauerwald, Claus-Dieter Kohl, and Michael Tiemann. “Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor.” <i>Advanced Functional Materials</i>, 2009, 653–61. <a href=\"https://doi.org/10.1002/adfm.200801458\">https://doi.org/10.1002/adfm.200801458</a>.","ama":"Waitz T, Wagner T, Sauerwald T, Kohl C-D, Tiemann M. Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor. <i>Advanced Functional Materials</i>. Published online 2009:653-661. doi:<a href=\"https://doi.org/10.1002/adfm.200801458\">10.1002/adfm.200801458</a>"},"page":"653-661","year":"2009","date_created":"2021-10-09T05:31:04Z","author":[{"full_name":"Waitz, Thomas","last_name":"Waitz","first_name":"Thomas"},{"first_name":"Thorsten","last_name":"Wagner","full_name":"Wagner, Thorsten"},{"first_name":"Tilman","full_name":"Sauerwald, Tilman","last_name":"Sauerwald"},{"last_name":"Kohl","full_name":"Kohl, Claus-Dieter","first_name":"Claus-Dieter"},{"first_name":"Michael","last_name":"Tiemann","orcid":"0000-0003-1711-2722","id":"23547","full_name":"Tiemann, Michael"}],"date_updated":"2023-03-09T08:42:44Z","doi":"10.1002/adfm.200801458","title":"Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor"}]