---
_id: '60580'
abstract:
- lang: eng
text: AbstractAlInP (001) is widely utilized as
a window layer in optoelectronic devices, including world‐record III‐V multi‐junction
solar cells and photoelectrochemical (PEC) cells. The chemical and electronic
properties of AlInP (001) depend on its surface reconstruction, which impacts
its interaction with electrolytes in PEC applications and passivation layers.
This study investigates AlInP (001) surface reconstructions using density functional
theory and experimental methods. Phosphorus‐rich (P‐rich) and indium‐rich (In‐rich)
AlInP surfaces are prepared with in situ monitoring of the process by reflection
anisotropy (RA) spectroscopy and confirmed by low‐energy electron diffraction
and photoemission spectroscopy. The experimental RA spectra closely match the
theoretical predictions obtained by solving the Bethe–Salpeter equation. It is
shown that missing hydrogen on P‐rich surfaces and formation of In–In 1D atomic
chains on In‐rich surfaces introduce mid‐gap surface states that pin the Fermi
level and induce band bending. Time‐resolved two‐photon photoemission measurements
reveal ultrafast near‐surface electron dynamics for both P‐rich and In‐rich surfaces,
demonstrating photoexcited electrons reaching the surface conduction band minimum
and relaxing to mid‐gap surface states on about hundreds of fs. This work provides
the most extensive AlInP surface analysis to date, allowing for more targeted
surface and interface engineering, which is crucial for the optimization and design
of III‐V heterostructures.
author:
- first_name: Mohammad Amin
full_name: Zare Pour, Mohammad Amin
last_name: Zare Pour
- first_name: Sahar
full_name: Shekarabi, Sahar
last_name: Shekarabi
- first_name: Isaac Azahel
full_name: Ruiz Alvarado, Isaac Azahel
id: '79462'
last_name: Ruiz Alvarado
orcid: 0000-0002-4710-1170
- first_name: Jonathan
full_name: Diederich, Jonathan
last_name: Diederich
- first_name: Yuyings
full_name: Gao, Yuyings
last_name: Gao
- first_name: Agnieszka
full_name: Paszuk, Agnieszka
last_name: Paszuk
- first_name: Dominik C.
full_name: Moritz, Dominik C.
last_name: Moritz
- first_name: Wolfram
full_name: Jaegermann, Wolfram
last_name: Jaegermann
- first_name: Dennis
full_name: Friedrich, Dennis
last_name: Friedrich
- first_name: Roel
full_name: van de Krol, Roel
last_name: van de Krol
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Thomas
full_name: Hannappel, Thomas
last_name: Hannappel
citation:
ama: 'Zare Pour MA, Shekarabi S, Ruiz Alvarado IA, et al. Exploring Electronic States
and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction.
Advanced Functional Materials. Published online 2025. doi:10.1002/adfm.202423702'
apa: 'Zare Pour, M. A., Shekarabi, S., Ruiz Alvarado, I. A., Diederich, J., Gao,
Y., Paszuk, A., Moritz, D. C., Jaegermann, W., Friedrich, D., van de Krol, R.,
Schmidt, W. G., & Hannappel, T. (2025). Exploring Electronic States and Ultrafast
Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction.
Advanced Functional Materials. https://doi.org/10.1002/adfm.202423702'
bibtex: '@article{Zare Pour_Shekarabi_Ruiz Alvarado_Diederich_Gao_Paszuk_Moritz_Jaegermann_Friedrich_van
de Krol_et al._2025, title={Exploring Electronic States and Ultrafast Electron
Dynamics in AlInP Window Layers: The Role of Surface Reconstruction}, DOI={10.1002/adfm.202423702}, journal={Advanced
Functional Materials}, publisher={Wiley}, author={Zare Pour, Mohammad Amin and
Shekarabi, Sahar and Ruiz Alvarado, Isaac Azahel and Diederich, Jonathan and Gao,
Yuyings and Paszuk, Agnieszka and Moritz, Dominik C. and Jaegermann, Wolfram and
Friedrich, Dennis and van de Krol, Roel and et al.}, year={2025} }'
chicago: 'Zare Pour, Mohammad Amin, Sahar Shekarabi, Isaac Azahel Ruiz Alvarado,
Jonathan Diederich, Yuyings Gao, Agnieszka Paszuk, Dominik C. Moritz, et al. “Exploring
Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The
Role of Surface Reconstruction.” Advanced Functional Materials, 2025. https://doi.org/10.1002/adfm.202423702.'
ieee: 'M. A. Zare Pour et al., “Exploring Electronic States and Ultrafast
Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction,”
Advanced Functional Materials, 2025, doi: 10.1002/adfm.202423702.'
mla: 'Zare Pour, Mohammad Amin, et al. “Exploring Electronic States and Ultrafast
Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction.”
Advanced Functional Materials, Wiley, 2025, doi:10.1002/adfm.202423702.'
short: M.A. Zare Pour, S. Shekarabi, I.A. Ruiz Alvarado, J. Diederich, Y. Gao, A.
Paszuk, D.C. Moritz, W. Jaegermann, D. Friedrich, R. van de Krol, W.G. Schmidt,
T. Hannappel, Advanced Functional Materials (2025).
date_created: 2025-07-09T13:33:15Z
date_updated: 2025-07-09T13:54:05Z
department:
- _id: '15'
- _id: '170'
- _id: '230'
- _id: '27'
- _id: '295'
doi: 10.1002/adfm.202423702
language:
- iso: eng
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
status: public
title: 'Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window
Layers: The Role of Surface Reconstruction'
type: journal_article
user_id: '79462'
year: '2025'
...
---
_id: '60815'
abstract:
- lang: eng
text: AbstractThe increasing demand for advanced
sensing technologies drives the development of chemical sensors using innovative
materials. In gas sensing, optical sensors are often used to detect gases such
as CO, NOx, and O2.
Oxygen sensors typically incorporate dyes into oxygen‐permeable matrices like
polymers, silica, or zeolites. Alternatively, semiconductor surface chemistry
can enable O2 detection. However, these approaches are often
limited by slow response and recovery times and low selectivity, restricting their
practical applications. The metal‐organic framework MOF‐76(Eu) and its yttrium‐modified
variant, MOF‐76(Eu/Y) are reported to exhibit highly reversible and fast optical
responses to varying O2 concentrations. Time‐resolved emission
measurements are performed over short (seconds) and long (hours) timescales using
N2 and synthetic air mixtures. Cross‐sensitivity to humidity
is analyzed. Multichannel scaling photon‐counting experiments confirm quenching
at the linker level, as the emission lifetime remains nearly constant. Yttrium
significantly improves stability and performance at room temperature. Structural
and optical changes induced by yttrium are investigated. Additionally, MIL‐78(Eu),
another Eu‐BTC‐based MOF with a different coordination environment, is synthesized.
Unlike MOF‐76(Eu), MIL‐78(Eu) exhibits distinct optical properties but lacks a
reversible response to O2. These results highlight the potential
of MOF‐76‐based materials for high‐performance O2 sensing.
article_number: e11190
article_type: original
author:
- first_name: Zhenyu
full_name: Zhao, Zhenyu
last_name: Zhao
- first_name: Christian
full_name: Weinberger, Christian
id: '11848'
last_name: Weinberger
- first_name: Jakob
full_name: Steube, Jakob
id: '40342'
last_name: Steube
orcid: 0000-0003-3178-4429
- first_name: Matthias
full_name: Bauer, Matthias
id: '47241'
last_name: Bauer
orcid: 0000-0002-9294-6076
- first_name: Martin
full_name: Brehm, Martin
id: '100167'
last_name: Brehm
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
citation:
ama: Zhao Z, Weinberger C, Steube J, Bauer M, Brehm M, Tiemann M. Fast‐Responding
O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks
(MOF‐76). Advanced Functional Materials. Published online 2025. doi:10.1002/adfm.202511190
apa: Zhao, Z., Weinberger, C., Steube, J., Bauer, M., Brehm, M., & Tiemann,
M. (2025). Fast‐Responding O2 Gas Sensor Based on Luminescent Europium
Metal‐Organic Frameworks (MOF‐76). Advanced Functional Materials, Article
e11190. https://doi.org/10.1002/adfm.202511190
bibtex: '@article{Zhao_Weinberger_Steube_Bauer_Brehm_Tiemann_2025, title={Fast‐Responding
O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks
(MOF‐76)}, DOI={10.1002/adfm.202511190},
number={e11190}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Zhao,
Zhenyu and Weinberger, Christian and Steube, Jakob and Bauer, Matthias and Brehm,
Martin and Tiemann, Michael}, year={2025} }'
chicago: Zhao, Zhenyu, Christian Weinberger, Jakob Steube, Matthias Bauer, Martin
Brehm, and Michael Tiemann. “Fast‐Responding O2 Gas Sensor Based on
Luminescent Europium Metal‐Organic Frameworks (MOF‐76).” Advanced Functional
Materials, 2025. https://doi.org/10.1002/adfm.202511190.
ieee: 'Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, and M. Tiemann, “Fast‐Responding
O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks
(MOF‐76),” Advanced Functional Materials, Art. no. e11190, 2025, doi: 10.1002/adfm.202511190.'
mla: Zhao, Zhenyu, et al. “Fast‐Responding O2 Gas Sensor Based on Luminescent
Europium Metal‐Organic Frameworks (MOF‐76).” Advanced Functional Materials,
e11190, Wiley, 2025, doi:10.1002/adfm.202511190.
short: Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, M. Tiemann, Advanced
Functional Materials (2025).
date_created: 2025-07-29T06:59:19Z
date_updated: 2025-07-29T07:02:22Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1002/adfm.202511190
language:
- iso: eng
main_file_link:
- open_access: '1'
oa: '1'
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
quality_controlled: '1'
status: public
title: Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic
Frameworks (MOF‐76)
type: journal_article
user_id: '23547'
year: '2025'
...
---
_id: '62816'
abstract:
- lang: eng
text: The increasing demand for advanced sensing technologies drives the development
of chemical sensors using innovative materials. In gas sensing, optical sensors
are often used to detect gases such as CO, NOx, and O2. Oxygen sensors typically
incorporate dyes into oxygen-permeable matrices like polymers, silica, or zeolites.
Alternatively, semiconductor surface chemistry can enable O2 detection. However,
these approaches are often limited by slow response and recovery times and low
selectivity, restricting their practical applications. The metal-organic framework
MOF-76(Eu) and its yttrium-modified variant, MOF-76(Eu/Y) are reported to exhibit
highly reversible and fast optical responses to varying O2 concentrations. Time-resolved
emission measurements are performed over short (seconds) and long (hours) timescales
using N2 and synthetic air mixtures. Cross-sensitivity to humidity is analyzed.
Multichannel scaling photon-counting experiments confirm quenching at the linker
level, as the emission lifetime remains nearly constant. Yttrium significantly
improves stability and performance at room temperature. Structural and optical
changes induced by yttrium are investigated. Additionally, MIL-78(Eu), another
Eu-BTC-based MOF with a different coordination environment, is synthesized. Unlike
MOF-76(Eu), MIL-78(Eu) exhibits distinct optical properties but lacks a reversible
response to O2. These results highlight the potential of MOF-76-based materials
for high-performance O2 sensing.
article_number: e11190
author:
- first_name: Zhenyu
full_name: Zhao, Zhenyu
last_name: Zhao
- first_name: Christian
full_name: Weinberger, Christian
id: '11848'
last_name: Weinberger
- first_name: Jakob
full_name: Steube, Jakob
id: '40342'
last_name: Steube
orcid: 0000-0003-3178-4429
- first_name: Matthias
full_name: Bauer, Matthias
id: '47241'
last_name: Bauer
orcid: 0000-0002-9294-6076
- first_name: Martin
full_name: Brehm, Martin
id: '100167'
last_name: Brehm
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
citation:
ama: Zhao Z, Weinberger C, Steube J, Bauer M, Brehm M, Tiemann M. Fast‐Responding
O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76).
Advanced Functional Materials. Published online 2025. doi:10.1002/adfm.202511190
apa: Zhao, Z., Weinberger, C., Steube, J., Bauer, M., Brehm, M., & Tiemann,
M. (2025). Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic
Frameworks (MOF‐76). Advanced Functional Materials, Article e11190. https://doi.org/10.1002/adfm.202511190
bibtex: '@article{Zhao_Weinberger_Steube_Bauer_Brehm_Tiemann_2025, title={Fast‐Responding
O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)},
DOI={10.1002/adfm.202511190},
number={e11190}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Zhao,
Zhenyu and Weinberger, Christian and Steube, Jakob and Bauer, Matthias and Brehm,
Martin and Tiemann, Michael}, year={2025} }'
chicago: Zhao, Zhenyu, Christian Weinberger, Jakob Steube, Matthias Bauer, Martin
Brehm, and Michael Tiemann. “Fast‐Responding O2 Gas Sensor Based on Luminescent
Europium Metal‐Organic Frameworks (MOF‐76).” Advanced Functional Materials,
2025. https://doi.org/10.1002/adfm.202511190.
ieee: 'Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, and M. Tiemann, “Fast‐Responding
O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76),”
Advanced Functional Materials, Art. no. e11190, 2025, doi: 10.1002/adfm.202511190.'
mla: Zhao, Zhenyu, et al. “Fast‐Responding O2 Gas Sensor Based on Luminescent Europium
Metal‐Organic Frameworks (MOF‐76).” Advanced Functional Materials, e11190,
Wiley, 2025, doi:10.1002/adfm.202511190.
short: Z. Zhao, C. Weinberger, J. Steube, M. Bauer, M. Brehm, M. Tiemann, Advanced
Functional Materials (2025).
date_created: 2025-12-03T17:09:28Z
date_updated: 2025-12-03T17:11:15Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1002/adfm.202511190
language:
- iso: eng
main_file_link:
- open_access: '1'
oa: '1'
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
quality_controlled: '1'
status: public
title: Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks
(MOF‐76)
type: journal_article
user_id: '23547'
year: '2025'
...
---
_id: '62926'
abstract:
- lang: eng
text: "Abstract\r\n \r\n Negatively
charged boron vacancies () in hexagonal boron nitride (hBN) are emerging as promising
solid‐state spin qubits due to their optical accessibility, structural simplicity,
and compatibility with photonic platforms. However, quantifying the density of
such defects in thin hBN flakes has remained elusive, limiting progress in device
integration and reproducibility. Here, an all‐optical method is presented to quantify
\ defect density in hBN by correlating Raman and photoluminescence (PL) signatures
with irradiation fluence. Two defect‐induced Raman modes, D1 and D2, are identified
and assigned them to vibrational modes of using polarization‐resolved Raman measurements
and density functional theory (DFT) calculations. By adapting a numerical model
originally developed for graphene, an empirical relationship linking Raman (D1,\r\n
\ E\r\n 2g\r\n
\ ) and PL intensities is established to absolute defect densities.
This method is universally applicable across various irradiation types and uniquely
suited for thin flakes, where conventional techniques fail. The approach enables
accurate, direct, and non‐destructive quantification of spin defect densities
down to 10\r\n 15\r\n defects/cm\r\n
\ 3\r\n , offering a
powerful tool for optimizing and benchmarking hBN for quantum optical applications.\r\n
\ "
article_number: e17851
author:
- first_name: Atanu
full_name: Patra, Atanu
last_name: Patra
- first_name: Paul
full_name: Konrad, Paul
last_name: Konrad
- first_name: Andreas
full_name: Sperlich, Andreas
last_name: Sperlich
- first_name: Timur
full_name: Biktagirov, Timur
id: '65612'
last_name: Biktagirov
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Lesley
full_name: Spencer, Lesley
last_name: Spencer
- first_name: Igor
full_name: Aharonovich, Igor
last_name: Aharonovich
- first_name: Sven
full_name: Höfling, Sven
last_name: Höfling
- first_name: Vladimir
full_name: Dyakonov, Vladimir
last_name: Dyakonov
citation:
ama: Patra A, Konrad P, Sperlich A, et al. Quantifying Spin Defect Density in hBN
via Raman and Photoluminescence Analysis. Advanced Functional Materials.
Published online 2025. doi:10.1002/adfm.202517851
apa: Patra, A., Konrad, P., Sperlich, A., Biktagirov, T., Schmidt, W. G., Spencer,
L., Aharonovich, I., Höfling, S., & Dyakonov, V. (2025). Quantifying Spin
Defect Density in hBN via Raman and Photoluminescence Analysis. Advanced Functional
Materials, Article e17851. https://doi.org/10.1002/adfm.202517851
bibtex: '@article{Patra_Konrad_Sperlich_Biktagirov_Schmidt_Spencer_Aharonovich_Höfling_Dyakonov_2025,
title={Quantifying Spin Defect Density in hBN via Raman and Photoluminescence
Analysis}, DOI={10.1002/adfm.202517851},
number={e17851}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Patra,
Atanu and Konrad, Paul and Sperlich, Andreas and Biktagirov, Timur and Schmidt,
Wolf Gero and Spencer, Lesley and Aharonovich, Igor and Höfling, Sven and Dyakonov,
Vladimir}, year={2025} }'
chicago: Patra, Atanu, Paul Konrad, Andreas Sperlich, Timur Biktagirov, Wolf Gero
Schmidt, Lesley Spencer, Igor Aharonovich, Sven Höfling, and Vladimir Dyakonov.
“Quantifying Spin Defect Density in HBN via Raman and Photoluminescence Analysis.”
Advanced Functional Materials, 2025. https://doi.org/10.1002/adfm.202517851.
ieee: 'A. Patra et al., “Quantifying Spin Defect Density in hBN via Raman
and Photoluminescence Analysis,” Advanced Functional Materials, Art. no.
e17851, 2025, doi: 10.1002/adfm.202517851.'
mla: Patra, Atanu, et al. “Quantifying Spin Defect Density in HBN via Raman and
Photoluminescence Analysis.” Advanced Functional Materials, e17851, Wiley,
2025, doi:10.1002/adfm.202517851.
short: A. Patra, P. Konrad, A. Sperlich, T. Biktagirov, W.G. Schmidt, L. Spencer,
I. Aharonovich, S. Höfling, V. Dyakonov, Advanced Functional Materials (2025).
date_created: 2025-12-05T14:15:35Z
date_updated: 2025-12-05T14:18:27Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1002/adfm.202517851
language:
- iso: eng
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
status: public
title: Quantifying Spin Defect Density in hBN via Raman and Photoluminescence Analysis
type: journal_article
user_id: '16199'
year: '2025'
...
---
_id: '61359'
abstract:
- lang: eng
text: AbstractThe current efficiency records for
generating green hydrogen via solar water splitting are held by indium phosphide
(InP)‐based photo‐absorbers, protected by TiO2 layers grown
through atomic layer deposition (ALD). InP is also a leading material for photonic
integrated circuits and computing, where ultrafast near‐surface behavior is key.
A previous study described electronic pathways at the phosphorus‐rich (P‐rich)
surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE)
spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface
modified with ALD‐deposited TiO2 are explored. Photoexcited
bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states
and surface states and inject into the TiO2 conduction band
(CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO2
adlayers are observed, with discrete states preserved up to 10 nm TiO2
deposition. Thermalization lifetimes of excited electrons > 0.8 eV above the
InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm.
Annealing at 300 °C to achieve crystalline TiO2 reconstructions
destroys interfacial states, affecting charge transfer. These observations enable
innovative engineering of the P‐rich InP/TiO2 heterointerface,
opening new possibilities for studying hot‐carrier extraction, adsorbate effects,
surface plasmons, and improving photovoltaic and PEC water‐splitting devices.
article_number: '2409455'
author:
- first_name: Jonathan
full_name: Diederich, Jonathan
last_name: Diederich
- first_name: Jennifer Velazquez
full_name: Rojas, Jennifer Velazquez
last_name: Rojas
- first_name: Agnieszka
full_name: Paszuk, Agnieszka
last_name: Paszuk
- first_name: Mohammad Amin Zare
full_name: Pour, Mohammad Amin Zare
last_name: Pour
- first_name: Christian
full_name: Höhn, Christian
last_name: Höhn
- first_name: Isaac Azahel Ruiz
full_name: Alvarado, Isaac Azahel Ruiz
last_name: Alvarado
- first_name: Klaus
full_name: Schwarzburg, Klaus
last_name: Schwarzburg
- first_name: David
full_name: Ostheimer, David
last_name: Ostheimer
- first_name: Rainer
full_name: Eichberger, Rainer
last_name: Eichberger
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Thomas
full_name: Hannappel, Thomas
last_name: Hannappel
- first_name: Roel
full_name: van de Krol, Roel
last_name: van de Krol
- first_name: Dennis
full_name: Friedrich, Dennis
last_name: Friedrich
citation:
ama: Diederich J, Rojas JV, Paszuk A, et al. Ultrafast Electron Dynamics at the
P‐rich Indium Phosphide/TiO2 Interface. Advanced Functional Materials.
2024;34(49). doi:10.1002/adfm.202409455
apa: Diederich, J., Rojas, J. V., Paszuk, A., Pour, M. A. Z., Höhn, C., Alvarado,
I. A. R., Schwarzburg, K., Ostheimer, D., Eichberger, R., Schmidt, W. G., Hannappel,
T., van de Krol, R., & Friedrich, D. (2024). Ultrafast Electron Dynamics at
the P‐rich Indium Phosphide/TiO2 Interface. Advanced Functional
Materials, 34(49), Article 2409455. https://doi.org/10.1002/adfm.202409455
bibtex: '@article{Diederich_Rojas_Paszuk_Pour_Höhn_Alvarado_Schwarzburg_Ostheimer_Eichberger_Schmidt_et
al._2024, title={Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2
Interface}, volume={34}, DOI={10.1002/adfm.202409455},
number={492409455}, journal={Advanced Functional Materials}, publisher={Wiley},
author={Diederich, Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka
and Pour, Mohammad Amin Zare and Höhn, Christian and Alvarado, Isaac Azahel Ruiz
and Schwarzburg, Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt,
Wolf Gero and et al.}, year={2024} }'
chicago: Diederich, Jonathan, Jennifer Velazquez Rojas, Agnieszka Paszuk, Mohammad
Amin Zare Pour, Christian Höhn, Isaac Azahel Ruiz Alvarado, Klaus Schwarzburg,
et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2
Interface.” Advanced Functional Materials 34, no. 49 (2024). https://doi.org/10.1002/adfm.202409455.
ieee: 'J. Diederich et al., “Ultrafast Electron Dynamics at the P‐rich Indium
Phosphide/TiO2 Interface,” Advanced Functional Materials, vol.
34, no. 49, Art. no. 2409455, 2024, doi: 10.1002/adfm.202409455.'
mla: Diederich, Jonathan, et al. “Ultrafast Electron Dynamics at the P‐rich Indium
Phosphide/TiO2 Interface.” Advanced Functional Materials, vol.
34, no. 49, 2409455, Wiley, 2024, doi:10.1002/adfm.202409455.
short: J. Diederich, J.V. Rojas, A. Paszuk, M.A.Z. Pour, C. Höhn, I.A.R. Alvarado,
K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van
de Krol, D. Friedrich, Advanced Functional Materials 34 (2024).
date_created: 2025-09-18T11:37:51Z
date_updated: 2025-12-05T13:35:09Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1002/adfm.202409455
intvolume: ' 34'
issue: '49'
language:
- iso: eng
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
status: public
title: Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2
Interface
type: journal_article
user_id: '16199'
volume: 34
year: '2024'
...
---
_id: '60582'
abstract:
- lang: eng
text: AbstractThe current efficiency records for
generating green hydrogen via solar water splitting are held by indium phosphide
(InP)‐based photo‐absorbers, protected by TiO2 layers grown
through atomic layer deposition (ALD). InP is also a leading material for photonic
integrated circuits and computing, where ultrafast near‐surface behavior is key.
A previous study described electronic pathways at the phosphorus‐rich (P‐rich)
surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE)
spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface
modified with ALD‐deposited TiO2 are explored. Photoexcited
bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states
and surface states and inject into the TiO2 conduction band
(CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO2
adlayers are observed, with discrete states preserved up to 10 nm TiO2
deposition. Thermalization lifetimes of excited electrons > 0.8 eV above the
InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm.
Annealing at 300 °C to achieve crystalline TiO2 reconstructions
destroys interfacial states, affecting charge transfer. These observations enable
innovative engineering of the P‐rich InP/TiO2 heterointerface,
opening new possibilities for studying hot‐carrier extraction, adsorbate effects,
surface plasmons, and improving photovoltaic and PEC water‐splitting devices.
article_type: original
author:
- first_name: Jonathan
full_name: Diederich, Jonathan
last_name: Diederich
- first_name: Jennifer Velazquez
full_name: Rojas, Jennifer Velazquez
last_name: Rojas
- first_name: Agnieszka
full_name: Paszuk, Agnieszka
last_name: Paszuk
- first_name: Mohammad Amin Zare
full_name: Pour, Mohammad Amin Zare
last_name: Pour
- first_name: Christian
full_name: Höhn, Christian
last_name: Höhn
- first_name: Isaac Azahel
full_name: Ruiz Alvarado, Isaac Azahel
id: '79462'
last_name: Ruiz Alvarado
orcid: 0000-0002-4710-1170
- first_name: Klaus
full_name: Schwarzburg, Klaus
last_name: Schwarzburg
- first_name: David
full_name: Ostheimer, David
last_name: Ostheimer
- first_name: Rainer
full_name: Eichberger, Rainer
last_name: Eichberger
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Thomas
full_name: Hannappel, Thomas
last_name: Hannappel
- first_name: Roel
full_name: van de Krol, Roel
last_name: van de Krol
- first_name: Dennis
full_name: Friedrich, Dennis
last_name: Friedrich
citation:
ama: Diederich J, Rojas JV, Paszuk A, et al. Ultrafast Electron Dynamics at the
P‐rich Indium Phosphide/TiO2 Interface. Advanced Functional Materials.
2024;34(49). doi:10.1002/adfm.202409455
apa: Diederich, J., Rojas, J. V., Paszuk, A., Pour, M. A. Z., Höhn, C., Ruiz Alvarado,
I. A., Schwarzburg, K., Ostheimer, D., Eichberger, R., Schmidt, W. G., Hannappel,
T., van de Krol, R., & Friedrich, D. (2024). Ultrafast Electron Dynamics at
the P‐rich Indium Phosphide/TiO2 Interface. Advanced Functional
Materials, 34(49). https://doi.org/10.1002/adfm.202409455
bibtex: '@article{Diederich_Rojas_Paszuk_Pour_Höhn_Ruiz Alvarado_Schwarzburg_Ostheimer_Eichberger_Schmidt_et
al._2024, title={Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2
Interface}, volume={34}, DOI={10.1002/adfm.202409455},
number={49}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Diederich,
Jonathan and Rojas, Jennifer Velazquez and Paszuk, Agnieszka and Pour, Mohammad
Amin Zare and Höhn, Christian and Ruiz Alvarado, Isaac Azahel and Schwarzburg,
Klaus and Ostheimer, David and Eichberger, Rainer and Schmidt, Wolf Gero and et
al.}, year={2024} }'
chicago: Diederich, Jonathan, Jennifer Velazquez Rojas, Agnieszka Paszuk, Mohammad
Amin Zare Pour, Christian Höhn, Isaac Azahel Ruiz Alvarado, Klaus Schwarzburg,
et al. “Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2
Interface.” Advanced Functional Materials 34, no. 49 (2024). https://doi.org/10.1002/adfm.202409455.
ieee: 'J. Diederich et al., “Ultrafast Electron Dynamics at the P‐rich Indium
Phosphide/TiO2 Interface,” Advanced Functional Materials, vol.
34, no. 49, 2024, doi: 10.1002/adfm.202409455.'
mla: Diederich, Jonathan, et al. “Ultrafast Electron Dynamics at the P‐rich Indium
Phosphide/TiO2 Interface.” Advanced Functional Materials, vol.
34, no. 49, Wiley, 2024, doi:10.1002/adfm.202409455.
short: J. Diederich, J.V. Rojas, A. Paszuk, M.A.Z. Pour, C. Höhn, I.A. Ruiz Alvarado,
K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van
de Krol, D. Friedrich, Advanced Functional Materials 34 (2024).
date_created: 2025-07-09T13:47:37Z
date_updated: 2025-12-05T13:39:54Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '27'
- _id: '35'
doi: 10.1002/adfm.202409455
intvolume: ' 34'
issue: '49'
language:
- iso: eng
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
status: public
title: Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2
Interface
type: journal_article
user_id: '16199'
volume: 34
year: '2024'
...
---
_id: '33682'
article_number: '2110930'
author:
- first_name: Mohammad
full_name: Khazaei, Mohammad
last_name: Khazaei
- first_name: Ahmad
full_name: Ranjbar, Ahmad
last_name: Ranjbar
- first_name: Yoon‐Gu
full_name: Kang, Yoon‐Gu
last_name: Kang
- first_name: Yunye
full_name: Liang, Yunye
last_name: Liang
- first_name: Rasoul
full_name: Khaledialidusti, Rasoul
last_name: Khaledialidusti
- first_name: Soungmin
full_name: Bae, Soungmin
last_name: Bae
- first_name: Hannes
full_name: Raebiger, Hannes
last_name: Raebiger
- first_name: Vei
full_name: Wang, Vei
last_name: Wang
- first_name: Myung Joon
full_name: Han, Myung Joon
last_name: Han
- first_name: Hiroshi
full_name: Mizoguchi, Hiroshi
last_name: Mizoguchi
- first_name: Mohammad S.
full_name: Bahramy, Mohammad S.
last_name: Bahramy
- first_name: Thomas
full_name: Kühne, Thomas
id: '49079'
last_name: Kühne
- first_name: Rodion V.
full_name: Belosludov, Rodion V.
last_name: Belosludov
- first_name: Kaoru
full_name: Ohno, Kaoru
last_name: Ohno
- first_name: Hideo
full_name: Hosono, Hideo
last_name: Hosono
citation:
ama: 'Khazaei M, Ranjbar A, Kang Y, et al. Electronic Structures of Group III–V
Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals,
and Topological Insulators. Advanced Functional Materials. 2022;32(20).
doi:10.1002/adfm.202110930'
apa: 'Khazaei, M., Ranjbar, A., Kang, Y., Liang, Y., Khaledialidusti, R., Bae, S.,
Raebiger, H., Wang, V., Han, M. J., Mizoguchi, H., Bahramy, M. S., Kühne, T.,
Belosludov, R. V., Ohno, K., & Hosono, H. (2022). Electronic Structures of
Group III–V Element Haeckelite Compounds: A Novel Family of Semiconductors, Dirac
Semimetals, and Topological Insulators. Advanced Functional Materials,
32(20), Article 2110930. https://doi.org/10.1002/adfm.202110930'
bibtex: '@article{Khazaei_Ranjbar_Kang_Liang_Khaledialidusti_Bae_Raebiger_Wang_Han_Mizoguchi_et
al._2022, title={Electronic Structures of Group III–V Element Haeckelite Compounds:
A Novel Family of Semiconductors, Dirac Semimetals, and Topological Insulators},
volume={32}, DOI={10.1002/adfm.202110930},
number={202110930}, journal={Advanced Functional Materials}, publisher={Wiley},
author={Khazaei, Mohammad and Ranjbar, Ahmad and Kang, Yoon‐Gu and Liang, Yunye
and Khaledialidusti, Rasoul and Bae, Soungmin and Raebiger, Hannes and Wang, Vei
and Han, Myung Joon and Mizoguchi, Hiroshi and et al.}, year={2022} }'
chicago: 'Khazaei, Mohammad, Ahmad Ranjbar, Yoon‐Gu Kang, Yunye Liang, Rasoul Khaledialidusti,
Soungmin Bae, Hannes Raebiger, et al. “Electronic Structures of Group III–V Element
Haeckelite Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and
Topological Insulators.” Advanced Functional Materials 32, no. 20 (2022).
https://doi.org/10.1002/adfm.202110930.'
ieee: 'M. Khazaei et al., “Electronic Structures of Group III–V Element Haeckelite
Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological
Insulators,” Advanced Functional Materials, vol. 32, no. 20, Art. no. 2110930,
2022, doi: 10.1002/adfm.202110930.'
mla: 'Khazaei, Mohammad, et al. “Electronic Structures of Group III–V Element Haeckelite
Compounds: A Novel Family of Semiconductors, Dirac Semimetals, and Topological
Insulators.” Advanced Functional Materials, vol. 32, no. 20, 2110930, Wiley,
2022, doi:10.1002/adfm.202110930.'
short: M. Khazaei, A. Ranjbar, Y. Kang, Y. Liang, R. Khaledialidusti, S. Bae, H.
Raebiger, V. Wang, M.J. Han, H. Mizoguchi, M.S. Bahramy, T. Kühne, R.V. Belosludov,
K. Ohno, H. Hosono, Advanced Functional Materials 32 (2022).
date_created: 2022-10-11T08:15:11Z
date_updated: 2022-10-11T08:15:28Z
department:
- _id: '613'
doi: 10.1002/adfm.202110930
intvolume: ' 32'
issue: '20'
keyword:
- Electrochemistry
- Condensed Matter Physics
- Biomaterials
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
status: public
title: 'Electronic Structures of Group III–V Element Haeckelite Compounds: A Novel
Family of Semiconductors, Dirac Semimetals, and Topological Insulators'
type: journal_article
user_id: '71051'
volume: 32
year: '2022'
...
---
_id: '23601'
author:
- first_name: Maged
full_name: Abdelsamie, Maged
last_name: Abdelsamie
- first_name: Junwei
full_name: Xu, Junwei
last_name: Xu
- first_name: Karsten
full_name: Bruening, Karsten
last_name: Bruening
- first_name: Christopher J.
full_name: Tassone, Christopher J.
last_name: Tassone
- first_name: Hans-Georg
full_name: Steinrück, Hans-Georg
id: '84268'
last_name: Steinrück
orcid: 0000-0001-6373-0877
- first_name: Michael F.
full_name: Toney, Michael F.
last_name: Toney
citation:
ama: Abdelsamie M, Xu J, Bruening K, Tassone CJ, Steinrück H-G, Toney MF. Impact
of Processing on Structural and Compositional Evolution in Mixed Metal Halide
Perovskites during Film Formation. Advanced Functional Materials. 2020;30:2001752.
doi:10.1002/adfm.202001752
apa: Abdelsamie, M., Xu, J., Bruening, K., Tassone, C. J., Steinrück, H.-G., &
Toney, M. F. (2020). Impact of Processing on Structural and Compositional Evolution
in Mixed Metal Halide Perovskites during Film Formation. Advanced Functional
Materials, 30, 2001752. https://doi.org/10.1002/adfm.202001752
bibtex: '@article{Abdelsamie_Xu_Bruening_Tassone_Steinrück_Toney_2020, title={Impact
of Processing on Structural and Compositional Evolution in Mixed Metal Halide
Perovskites during Film Formation}, volume={30}, DOI={10.1002/adfm.202001752},
journal={Advanced Functional Materials}, author={Abdelsamie, Maged and Xu, Junwei
and Bruening, Karsten and Tassone, Christopher J. and Steinrück, Hans-Georg and
Toney, Michael F.}, year={2020}, pages={2001752} }'
chicago: 'Abdelsamie, Maged, Junwei Xu, Karsten Bruening, Christopher J. Tassone,
Hans-Georg Steinrück, and Michael F. Toney. “Impact of Processing on Structural
and Compositional Evolution in Mixed Metal Halide Perovskites during Film Formation.”
Advanced Functional Materials 30 (2020): 2001752. https://doi.org/10.1002/adfm.202001752.'
ieee: 'M. Abdelsamie, J. Xu, K. Bruening, C. J. Tassone, H.-G. Steinrück, and M.
F. Toney, “Impact of Processing on Structural and Compositional Evolution in Mixed
Metal Halide Perovskites during Film Formation,” Advanced Functional Materials,
vol. 30, p. 2001752, 2020, doi: 10.1002/adfm.202001752.'
mla: Abdelsamie, Maged, et al. “Impact of Processing on Structural and Compositional
Evolution in Mixed Metal Halide Perovskites during Film Formation.” Advanced
Functional Materials, vol. 30, 2020, p. 2001752, doi:10.1002/adfm.202001752.
short: M. Abdelsamie, J. Xu, K. Bruening, C.J. Tassone, H.-G. Steinrück, M.F. Toney,
Advanced Functional Materials 30 (2020) 2001752.
date_created: 2021-09-01T09:08:01Z
date_updated: 2022-01-06T06:55:57Z
department:
- _id: '633'
doi: 10.1002/adfm.202001752
intvolume: ' 30'
language:
- iso: eng
page: '2001752'
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
status: public
title: Impact of Processing on Structural and Compositional Evolution in Mixed Metal
Halide Perovskites during Film Formation
type: journal_article
user_id: '84268'
volume: 30
year: '2020'
...
---
_id: '25905'
abstract:
- lang: eng
text: A nanocomposite material based on copper(II) oxide (CuO) and its utilization
as a highly selective and stable gas-responsive electrical switch for hydrogen
sulphide (H2S) detection is presented. The material can be applied as a sensitive
layer for H2S monitoring, e.g., in biogas gas plants. CuO nanoparticles are embedded
in a rigid, nanoporous silica (SiO2) matrix to form an electrical percolating
network of low conducting CuO and, upon exposure to H2S, highly conducting copper(II)
sulphide (CuS) particles. By steric hindrance due to the silica pore walls, the
structure of the network is maintained even though the reversible reaction of
CuO to CuS is accompanied by significant volume expansion. The conducting state
of the percolating network can be controlled by a variety of parameters, such
as temperature, electrode layout, and network topology of the porous silica matrix.
The latter means that this new type of sensing material has a structure-encoded
detection limit for H2S, which offers new application opportunities. The fabrication
process of the mesoporous CuO@SiO2 composite as well as the sensor design and
characteristics are described in detail. In addition, theoretical modeling of
the percolation effect by Monte-Carlo simulations yields deeper insight into the
underlying percolation mechanism and the observed response characteristics.
article_number: '1904505'
article_type: original
author:
- first_name: Andrej
full_name: Paul, Andrej
last_name: Paul
- first_name: Bertram
full_name: Schwind, Bertram
last_name: Schwind
- first_name: Christian
full_name: Weinberger, Christian
id: '11848'
last_name: Weinberger
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: Thorsten
full_name: Wagner, Thorsten
last_name: Wagner
citation:
ama: 'Paul A, Schwind B, Weinberger C, Tiemann M, Wagner T. Gas Responsive Nanoswitch:
Copper Oxide Composite for Highly Selective H2S Detection. Advanced Functional
Materials. Published online 2019. doi:10.1002/adfm.201904505'
apa: 'Paul, A., Schwind, B., Weinberger, C., Tiemann, M., & Wagner, T. (2019).
Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection.
Advanced Functional Materials, Article 1904505. https://doi.org/10.1002/adfm.201904505'
bibtex: '@article{Paul_Schwind_Weinberger_Tiemann_Wagner_2019, title={Gas Responsive
Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection}, DOI={10.1002/adfm.201904505}, number={1904505},
journal={Advanced Functional Materials}, author={Paul, Andrej and Schwind, Bertram
and Weinberger, Christian and Tiemann, Michael and Wagner, Thorsten}, year={2019}
}'
chicago: 'Paul, Andrej, Bertram Schwind, Christian Weinberger, Michael Tiemann,
and Thorsten Wagner. “Gas Responsive Nanoswitch: Copper Oxide Composite for Highly
Selective H2S Detection.” Advanced Functional Materials, 2019. https://doi.org/10.1002/adfm.201904505.'
ieee: 'A. Paul, B. Schwind, C. Weinberger, M. Tiemann, and T. Wagner, “Gas Responsive
Nanoswitch: Copper Oxide Composite for Highly Selective H2S Detection,” Advanced
Functional Materials, Art. no. 1904505, 2019, doi: 10.1002/adfm.201904505.'
mla: 'Paul, Andrej, et al. “Gas Responsive Nanoswitch: Copper Oxide Composite for
Highly Selective H2S Detection.” Advanced Functional Materials, 1904505,
2019, doi:10.1002/adfm.201904505.'
short: A. Paul, B. Schwind, C. Weinberger, M. Tiemann, T. Wagner, Advanced Functional
Materials (2019).
date_created: 2021-10-08T10:42:50Z
date_updated: 2023-03-22T09:11:49Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1002/adfm.201904505
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://onlinelibrary.wiley.com/doi/epdf/10.1002/adfm.201904505
oa: '1'
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
quality_controlled: '1'
status: public
title: 'Gas Responsive Nanoswitch: Copper Oxide Composite for Highly Selective H2S
Detection'
type: journal_article
user_id: '23547'
year: '2019'
...
---
_id: '41272'
author:
- first_name: Vito
full_name: Di Noto, Vito
last_name: Di Noto
- first_name: Angelika B.
full_name: Boeer, Angelika B.
last_name: Boeer
- first_name: Sandra
full_name: Lavina, Sandra
last_name: Lavina
- first_name: Christopher A.
full_name: Muryn, Christopher A.
last_name: Muryn
- first_name: Matthias
full_name: Bauer, Matthias
id: '47241'
last_name: Bauer
orcid: 0000-0002-9294-6076
- first_name: Grigore A.
full_name: Timco, Grigore A.
last_name: Timco
- first_name: Enrico
full_name: Negro, Enrico
last_name: Negro
- first_name: Marzio
full_name: Rancan, Marzio
last_name: Rancan
- first_name: Richard E. P.
full_name: Winpenny, Richard E. P.
last_name: Winpenny
- first_name: Silvia
full_name: Gross, Silvia
last_name: Gross
citation:
ama: Di Noto V, Boeer AB, Lavina S, et al. Functional Chromium Wheel-Based Hybrid
Organic-Inorganic Materials for Dielectric Applications. Advanced Functional
Materials. 2009;19(20):3226-3236. doi:10.1002/adfm.200900600
apa: Di Noto, V., Boeer, A. B., Lavina, S., Muryn, C. A., Bauer, M., Timco, G. A.,
Negro, E., Rancan, M., Winpenny, R. E. P., & Gross, S. (2009). Functional
Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric Applications.
Advanced Functional Materials, 19(20), 3226–3236. https://doi.org/10.1002/adfm.200900600
bibtex: '@article{Di Noto_Boeer_Lavina_Muryn_Bauer_Timco_Negro_Rancan_Winpenny_Gross_2009,
title={Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for
Dielectric Applications}, volume={19}, DOI={10.1002/adfm.200900600},
number={20}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Di
Noto, Vito and Boeer, Angelika B. and Lavina, Sandra and Muryn, Christopher A.
and Bauer, Matthias and Timco, Grigore A. and Negro, Enrico and Rancan, Marzio
and Winpenny, Richard E. P. and Gross, Silvia}, year={2009}, pages={3226–3236}
}'
chicago: 'Di Noto, Vito, Angelika B. Boeer, Sandra Lavina, Christopher A. Muryn,
Matthias Bauer, Grigore A. Timco, Enrico Negro, Marzio Rancan, Richard E. P. Winpenny,
and Silvia Gross. “Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials
for Dielectric Applications.” Advanced Functional Materials 19, no. 20
(2009): 3226–36. https://doi.org/10.1002/adfm.200900600.'
ieee: 'V. Di Noto et al., “Functional Chromium Wheel-Based Hybrid Organic-Inorganic
Materials for Dielectric Applications,” Advanced Functional Materials,
vol. 19, no. 20, pp. 3226–3236, 2009, doi: 10.1002/adfm.200900600.'
mla: Di Noto, Vito, et al. “Functional Chromium Wheel-Based Hybrid Organic-Inorganic
Materials for Dielectric Applications.” Advanced Functional Materials,
vol. 19, no. 20, Wiley, 2009, pp. 3226–36, doi:10.1002/adfm.200900600.
short: V. Di Noto, A.B. Boeer, S. Lavina, C.A. Muryn, M. Bauer, G.A. Timco, E. Negro,
M. Rancan, R.E.P. Winpenny, S. Gross, Advanced Functional Materials 19 (2009)
3226–3236.
date_created: 2023-01-31T15:06:12Z
date_updated: 2023-01-31T15:06:24Z
department:
- _id: '306'
doi: 10.1002/adfm.200900600
intvolume: ' 19'
issue: '20'
keyword:
- Electrochemistry
- Condensed Matter Physics
- Biomaterials
- Electronic
- Optical and Magnetic Materials
language:
- iso: eng
page: 3226-3236
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
publisher: Wiley
status: public
title: Functional Chromium Wheel-Based Hybrid Organic-Inorganic Materials for Dielectric
Applications
type: journal_article
user_id: '48467'
volume: 19
year: '2009'
...
---
_id: '25975'
abstract:
- lang: eng
text: The synthesis and characterization of ordered mesoporous In2O3 materials by
structure replication from hexagonal mesoporous SBA-15 silica and cubic KIT-6
silica is presented. Variation of the synthesis parameters allows for different
pore sizes and pore wall thicknesses in the products. The In2O3 samples turn out
to be stable up to temperatures between 450 °C and 650 °C; such high thermal stability
is necessary for their application as gas sensors. Test measurements show a high
sensitivity to methane gas in concentrations relevant for explosion prevention.
The sensitivity is shown to be correlated not only with the surface-to-volume
ratio, but also with the nanoscopic structural properties of the materials.
article_type: original
author:
- first_name: Thomas
full_name: Waitz, Thomas
last_name: Waitz
- first_name: Thorsten
full_name: Wagner, Thorsten
last_name: Wagner
- first_name: Tilman
full_name: Sauerwald, Tilman
last_name: Sauerwald
- first_name: Claus-Dieter
full_name: Kohl, Claus-Dieter
last_name: Kohl
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
citation:
ama: 'Waitz T, Wagner T, Sauerwald T, Kohl C-D, Tiemann M. Ordered Mesoporous In2O3:
Synthesis by Structure Replication and Application as a Methane Gas Sensor. Advanced
Functional Materials. Published online 2009:653-661. doi:10.1002/adfm.200801458'
apa: 'Waitz, T., Wagner, T., Sauerwald, T., Kohl, C.-D., & Tiemann, M. (2009).
Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application as
a Methane Gas Sensor. Advanced Functional Materials, 653–661. https://doi.org/10.1002/adfm.200801458'
bibtex: '@article{Waitz_Wagner_Sauerwald_Kohl_Tiemann_2009, title={Ordered Mesoporous
In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor},
DOI={10.1002/adfm.200801458},
journal={Advanced Functional Materials}, author={Waitz, Thomas and Wagner, Thorsten
and Sauerwald, Tilman and Kohl, Claus-Dieter and Tiemann, Michael}, year={2009},
pages={653–661} }'
chicago: 'Waitz, Thomas, Thorsten Wagner, Tilman Sauerwald, Claus-Dieter Kohl, and
Michael Tiemann. “Ordered Mesoporous In2O3: Synthesis by Structure Replication
and Application as a Methane Gas Sensor.” Advanced Functional Materials,
2009, 653–61. https://doi.org/10.1002/adfm.200801458.'
ieee: 'T. Waitz, T. Wagner, T. Sauerwald, C.-D. Kohl, and M. Tiemann, “Ordered Mesoporous
In2O3: Synthesis by Structure Replication and Application as a Methane Gas Sensor,”
Advanced Functional Materials, pp. 653–661, 2009, doi: 10.1002/adfm.200801458.'
mla: 'Waitz, Thomas, et al. “Ordered Mesoporous In2O3: Synthesis by Structure Replication
and Application as a Methane Gas Sensor.” Advanced Functional Materials,
2009, pp. 653–61, doi:10.1002/adfm.200801458.'
short: T. Waitz, T. Wagner, T. Sauerwald, C.-D. Kohl, M. Tiemann, Advanced Functional
Materials (2009) 653–661.
date_created: 2021-10-09T05:31:04Z
date_updated: 2023-03-09T08:42:44Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1002/adfm.200801458
extern: '1'
language:
- iso: eng
page: 653-661
publication: Advanced Functional Materials
publication_identifier:
issn:
- 1616-301X
- 1616-3028
publication_status: published
quality_controlled: '1'
status: public
title: 'Ordered Mesoporous In2O3: Synthesis by Structure Replication and Application
as a Methane Gas Sensor'
type: journal_article
user_id: '23547'
year: '2009'
...