[{"status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-08-13T09:20:05Z","_id":"3888","department":[{"_id":"61"},{"_id":"284"},{"_id":"290"},{"_id":"292"},{"_id":"287"},{"_id":"35"},{"_id":"230"}],"user_id":"14931","intvolume":"        13","page":"292-296","citation":{"apa":"Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier, C., Reuter, D., &#38; As, D. J. (2016). Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>Physica Status Solidi (c)</i>, <i>13</i>(5–6), 292–296. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>","bibtex":"@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016, title={Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>}, number={5–6}, journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296} }","short":"S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier, D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.","mla":"Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i>, vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","ama":"Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. <i>physica status solidi (c)</i>. 2016;13(5-6):292-296. doi:<a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>","ieee":"S. Blumenthal <i>et al.</i>, “Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,” <i>physica status solidi (c)</i>, vol. 13, no. 5–6, pp. 292–296, 2016, doi: <a href=\"https://doi.org/10.1002/pssc.201600010\">10.1002/pssc.201600010</a>.","chicago":"Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner, Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.” <i>Physica Status Solidi (c)</i> 13, no. 5–6 (2016): 292–96. <a href=\"https://doi.org/10.1002/pssc.201600010\">https://doi.org/10.1002/pssc.201600010</a>."},"has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","doi":"10.1002/pssc.201600010","date_updated":"2023-10-09T09:06:08Z","volume":13,"author":[{"full_name":"Blumenthal, Sarah","last_name":"Blumenthal","first_name":"Sarah"},{"last_name":"Bürger","full_name":"Bürger, Matthias","first_name":"Matthias"},{"first_name":"Andre","last_name":"Hildebrandt","full_name":"Hildebrandt, Andre"},{"orcid":"0000-0001-7059-9862","last_name":"Förstner","id":"158","full_name":"Förstner, Jens","first_name":"Jens"},{"first_name":"Nils","last_name":"Weber","full_name":"Weber, Nils"},{"first_name":"Cedrik","id":"20798","full_name":"Meier, Cedrik","last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572"},{"first_name":"Dirk","full_name":"Reuter, Dirk","id":"37763","last_name":"Reuter"},{"last_name":"As","orcid":"0000-0003-1121-3565","full_name":"As, Donat J.","id":"14","first_name":"Donat J."}],"abstract":[{"text":"We successfully developed a process to fabricate freestanding cubic aluminium nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots (QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE). To realize the photonic crystal (PhC) membrane we have chosen a triangular array of holes. The array was fabricated by electron beam lithography and several steps of reactive ion etching (RIE) with the help of a hard mask and an undercut of the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL) measurements of the photonic crystals, in particular of a H1 and a L3 cavity, and the emission of the QD ensemble were performed to characterize the samples. The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000 for two different modes of the L3 cavity, respectively. The energy of the fundamental modes is in good agreement to the numerical simulations. ","lang":"eng"}],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_id":"3889","access_level":"closed","file_name":"2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf","file_size":1119165,"creator":"hclaudia","date_created":"2018-08-13T09:20:05Z","date_updated":"2018-08-13T09:20:05Z"}],"publication":"physica status solidi (c)","keyword":["tet_topic_phc","tet_topic_qd"],"ddc":["530"],"language":[{"iso":"eng"}],"year":"2016","issue":"5-6","title":"Fabrication and characterization of two-dimensional cubic AlN photonic crystal membranes containing zincblende GaN quantum dots","publisher":"Wiley","date_created":"2018-08-13T09:14:58Z"},{"user_id":"42514","department":[{"_id":"286"},{"_id":"292"},{"_id":"15"}],"_id":"4024","file_date_updated":"2018-08-21T13:10:09Z","article_type":"original","type":"journal_article","status":"public","author":[{"first_name":"M.","full_name":"Bürger, M.","last_name":"Bürger"},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"As, D. J.","last_name":"As","first_name":"D. J."}],"volume":12,"date_updated":"2022-01-06T07:00:08Z","doi":"10.1002/pssc.201400132","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]},"citation":{"ama":"Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>physica status solidi (c)</i>. 2015;12(4-5):452-455. doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>","chicago":"Bürger, M., Jörg Lindner, Dirk Reuter, and D. J. As. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 452–55. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>.","ieee":"M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 452–455, 2015.","bibtex":"@article{Bürger_Lindner_Reuter_As_2015, title={Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger, M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}, year={2015}, pages={452–455} }","short":"M. Bürger, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (C) 12 (2015) 452–455.","mla":"Bürger, M., et al. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 452–55, doi:<a href=\"https://doi.org/10.1002/pssc.201400132\">10.1002/pssc.201400132</a>.","apa":"Bürger, M., Lindner, J., Reuter, D., &#38; As, D. J. (2015). Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 452–455. <a href=\"https://doi.org/10.1002/pssc.201400132\">https://doi.org/10.1002/pssc.201400132</a>"},"page":"452-455","intvolume":"        12","language":[{"iso":"eng"}],"ddc":["530"],"publication":"physica status solidi (c)","file":[{"content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-21T13:10:09Z","creator":"hclaudia","date_created":"2018-08-21T13:10:09Z","file_size":650052,"file_name":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process.pdf","access_level":"closed","file_id":"4025"}],"abstract":[{"text":"We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic strained cubic AlN layers on \r\n3C-SiC (001) substrates grown by means of molecular beam epitaxy. Surface morphologies of various QD sizes \r\nand densities were obtained from uncapped samples by atomic force microscopy. These results were correlated \r\nwith similar but capped samples by photoluminescence experiments. The QD density varies by one order of \r\nmagnitude from ~1x10^10 cm^-2 to ~1x10^11 cm^-2 as a function of the GaN coverage on the surface. The initial layer \r\nthickness for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers by a comparison \r\nbetween the experimental results and an analytical model. Our results reveal the strain-driven Stranski-Krastanov \r\ngrowth mode as the main formation process of the cubic GaN QDs.  ","lang":"eng"}],"date_created":"2018-08-21T13:07:35Z","publisher":"Wiley","title":"Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process","issue":"4-5","year":"2015"},{"year":"2015","issue":"4-5","title":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells","publisher":"Wiley","date_created":"2018-08-21T13:17:46Z","abstract":[{"text":"We report the influence of {111} stacking faults on the cathodoluminescence (CL) emission characteristics of\r\ncubic GaN (c-GaN) films and cubic GaN/AlN multiquantum wells. Transmission electron microscopy\r\n(TEM) measurements indicate that stacking faults (SFs) on the {111} planes are the predominant crystallographic\r\ndefects in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted molecular\r\nbeam epitaxy. The correlation of the SFs and the luminescence output is evidenced with a CL setup\r\nintegrated in a scanning TEM (STEM). By comparing the STEM images and the simultaneously measured CL\r\nsignals it is demonstrated that SFs in these films lead to a reduced CL emission intensity. Furthermore, the CL\r\nemission intensity is shown to increase with increasing film thickness and decreasing SF density. This\r\ncorrelation can be connected to the reduction of the full width at half maximum of X-ray diffraction rocking\r\ncurves with increasing film thickness of c-GaN films.","lang":"eng"}],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_name":"STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN-AlN multi-quantum wells.pdf","access_level":"closed","file_id":"4028","file_size":447603,"creator":"hclaudia","date_created":"2018-08-21T13:18:38Z","date_updated":"2018-08-21T13:18:38Z"}],"publication":"physica status solidi (c)","ddc":["530"],"language":[{"iso":"eng"}],"intvolume":"        12","page":"469-472","citation":{"ama":"Kemper RM, Veit P, Mietze C, et al. STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. <i>physica status solidi (c)</i>. 2015;12(4-5):469-472. doi:<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>","chicago":"Kemper, R. M., P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, Jörg Lindner, and D. J. As. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells.” <i>Physica Status Solidi (C)</i> 12, no. 4–5 (2015): 469–72. <a href=\"https://doi.org/10.1002/pssc.201400154\">https://doi.org/10.1002/pssc.201400154</a>.","ieee":"R. M. Kemper <i>et al.</i>, “STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells,” <i>physica status solidi (c)</i>, vol. 12, no. 4–5, pp. 469–472, 2015.","apa":"Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Bertram, F., … As, D. J. (2015). STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells. <i>Physica Status Solidi (C)</i>, <i>12</i>(4–5), 469–472. <a href=\"https://doi.org/10.1002/pssc.201400154\">https://doi.org/10.1002/pssc.201400154</a>","mla":"Kemper, R. M., et al. “STEM-CL Investigations on the Influence of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum Wells.” <i>Physica Status Solidi (C)</i>, vol. 12, no. 4–5, Wiley, 2015, pp. 469–72, doi:<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>.","short":"R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J. Christen, J. Lindner, D.J. As, Physica Status Solidi (C) 12 (2015) 469–472.","bibtex":"@article{Kemper_Veit_Mietze_Dempewolf_Wecker_Bertram_Christen_Lindner_As_2015, title={STEM-CL investigations on the influence of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}, volume={12}, DOI={<a href=\"https://doi.org/10.1002/pssc.201400154\">10.1002/pssc.201400154</a>}, number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Bertram, F. and Christen, J. and Lindner, Jörg and As, D. J.}, year={2015}, pages={469–472} }"},"has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","doi":"10.1002/pssc.201400154","date_updated":"2022-01-06T07:00:08Z","volume":12,"author":[{"full_name":"Kemper, R. M.","last_name":"Kemper","first_name":"R. M."},{"last_name":"Veit","full_name":"Veit, P.","first_name":"P."},{"first_name":"C.","last_name":"Mietze","full_name":"Mietze, C."},{"last_name":"Dempewolf","full_name":"Dempewolf, A.","first_name":"A."},{"last_name":"Wecker","full_name":"Wecker, T.","first_name":"T."},{"first_name":"F.","full_name":"Bertram, F.","last_name":"Bertram"},{"first_name":"J.","last_name":"Christen","full_name":"Christen, J."},{"last_name":"Lindner","id":"20797","full_name":"Lindner, Jörg","first_name":"Jörg"},{"first_name":"D. J.","last_name":"As","full_name":"As, D. J."}],"status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-08-21T13:18:38Z","_id":"4027","department":[{"_id":"286"},{"_id":"15"}],"user_id":"55706"},{"year":"2014","intvolume":"        11","page":"790-793","citation":{"mla":"Bürger, M., et al. “Non-Polar GaN Quantum Dots Integrated into High Quality Cubic AlN Microdisks.” <i>Physica Status Solidi (C)</i>, vol. 11, no. 3–4, Wiley, 2014, pp. 790–93, doi:<a href=\"https://doi.org/10.1002/pssc.201300411\">10.1002/pssc.201300411</a>.","short":"M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, D.J. As, Physica Status Solidi (C) 11 (2014) 790–793.","bibtex":"@article{Bürger_Callsen_Kure_Hoffmann_Pawlis_Reuter_As_2014, title={Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks}, volume={11}, DOI={<a href=\"https://doi.org/10.1002/pssc.201300411\">10.1002/pssc.201300411</a>}, number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger, M. and Callsen, G. and Kure, T. and Hoffmann, A. and Pawlis, A. and Reuter, Dirk and As, D. J.}, year={2014}, pages={790–793} }","apa":"Bürger, M., Callsen, G., Kure, T., Hoffmann, A., Pawlis, A., Reuter, D., &#38; As, D. J. (2014). Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks. <i>Physica Status Solidi (C)</i>, <i>11</i>(3–4), 790–793. <a href=\"https://doi.org/10.1002/pssc.201300411\">https://doi.org/10.1002/pssc.201300411</a>","ama":"Bürger M, Callsen G, Kure T, et al. Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks. <i>physica status solidi (c)</i>. 2014;11(3-4):790-793. doi:<a href=\"https://doi.org/10.1002/pssc.201300411\">10.1002/pssc.201300411</a>","chicago":"Bürger, M., G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, Dirk Reuter, and D. J. As. “Non-Polar GaN Quantum Dots Integrated into High Quality Cubic AlN Microdisks.” <i>Physica Status Solidi (C)</i> 11, no. 3–4 (2014): 790–93. <a href=\"https://doi.org/10.1002/pssc.201300411\">https://doi.org/10.1002/pssc.201300411</a>.","ieee":"M. Bürger <i>et al.</i>, “Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks,” <i>physica status solidi (c)</i>, vol. 11, no. 3–4, pp. 790–793, 2014."},"publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","issue":"3-4","title":"Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks","doi":"10.1002/pssc.201300411","date_updated":"2022-01-06T07:03:30Z","publisher":"Wiley","volume":11,"date_created":"2019-01-29T12:47:30Z","author":[{"last_name":"Bürger","full_name":"Bürger, M.","first_name":"M."},{"first_name":"G.","last_name":"Callsen","full_name":"Callsen, G."},{"full_name":"Kure, T.","last_name":"Kure","first_name":"T."},{"first_name":"A.","full_name":"Hoffmann, A.","last_name":"Hoffmann"},{"full_name":"Pawlis, A.","last_name":"Pawlis","first_name":"A."},{"last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk","first_name":"Dirk"},{"last_name":"As","full_name":"As, D. J.","first_name":"D. J."}],"status":"public","publication":"physica status solidi (c)","type":"journal_article","language":[{"iso":"eng"}],"_id":"7238","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"title":"Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)","publisher":"Wiley","date_created":"2018-08-22T12:28:15Z","year":"2014","issue":"2","ddc":["530"],"language":[{"iso":"eng"}],"abstract":[{"lang":"eng","text":"We report for the first time on the growth of cubic AlN/GaN multi‐quantum wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between, which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy. Substrate patterning has been realized by electron beam lithography and a reactive ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height of about 700 nm. (Scanning) transmission electron microscopy studies show that the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating the local growth rate. Further, the growth at the edges of the surface pattern is investigated. The MQW layers cover the 90° edges by developing low‐index facets rather than by forming a conformal system of 90° angled layers. "}],"file":[{"content_type":"application/pdf","success":1,"relation":"main_file","date_updated":"2018-08-22T12:30:12Z","creator":"hclaudia","date_created":"2018-08-22T12:30:12Z","file_size":3777577,"access_level":"closed","file_id":"4071","file_name":"Cubic GaN-AlN multi-quantum wells grown on pre-patterned 3C SiC Si 001.pdf"}],"publication":"physica status solidi (c)","doi":"10.1002/pssc.201300292","date_updated":"2022-01-06T07:00:13Z","author":[{"last_name":"Kemper","full_name":"Kemper, R. M.","first_name":"R. M."},{"last_name":"Mietze","full_name":"Mietze, C.","first_name":"C."},{"last_name":"Hiller","full_name":"Hiller, L.","first_name":"L."},{"full_name":"Stauden, T.","last_name":"Stauden","first_name":"T."},{"last_name":"Pezoldt","full_name":"Pezoldt, J.","first_name":"J."},{"last_name":"Meertens","full_name":"Meertens, D.","first_name":"D."},{"first_name":"M.","full_name":"Luysberg, M.","last_name":"Luysberg"},{"last_name":"As","full_name":"As, D. J.","first_name":"D. J."},{"first_name":"Jörg","full_name":"Lindner, Jörg","id":"20797","last_name":"Lindner"}],"volume":11,"citation":{"bibtex":"@article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014, title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)}, volume={11}, DOI={<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens, D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268} }","mla":"Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i>, vol. 11, no. 2, Wiley, 2014, pp. 265–68, doi:<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>.","short":"R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268.","apa":"Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens, D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>Physica Status Solidi (C)</i>, <i>11</i>(2), 265–268. <a href=\"https://doi.org/10.1002/pssc.201300292\">https://doi.org/10.1002/pssc.201300292</a>","chicago":"Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned 3C-SiC/Si (001).” <i>Physica Status Solidi (C)</i> 11, no. 2 (2014): 265–68. <a href=\"https://doi.org/10.1002/pssc.201300292\">https://doi.org/10.1002/pssc.201300292</a>.","ieee":"R. M. Kemper <i>et al.</i>, “Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001),” <i>physica status solidi (c)</i>, vol. 11, no. 2, pp. 265–268, 2014.","ama":"Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). <i>physica status solidi (c)</i>. 2014;11(2):265-268. doi:<a href=\"https://doi.org/10.1002/pssc.201300292\">10.1002/pssc.201300292</a>"},"intvolume":"        11","page":"265-268","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]},"article_type":"original","file_date_updated":"2018-08-22T12:30:12Z","_id":"4070","user_id":"55706","department":[{"_id":"15"},{"_id":"286"}],"status":"public","type":"journal_article"},{"year":"2013","citation":{"chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i> 10, no. 9 (2013): 1214–17. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>.","ieee":"H. Höpfner <i>et al.</i>, “Spin relaxation length in quantum dot spin LEDs,” <i>physica status solidi (c)</i>, vol. 10, no. 9, pp. 1214–1217, 2013.","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. <i>physica status solidi (c)</i>. 2013;10(9):1214-1217. doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. <i>Physica Status Solidi (C)</i>, <i>10</i>(9), 1214–1217. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>","bibtex":"@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10}, DOI={<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>}, number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }","mla":"Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i>, vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>.","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi (C) 10 (2013) 1214–1217."},"intvolume":"        10","page":"1214-1217","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"issue":"9","title":"Spin relaxation length in quantum dot spin LEDs","doi":"10.1002/pssc.201200689","publisher":"Wiley","date_updated":"2022-01-06T07:03:31Z","author":[{"first_name":"Henning","full_name":"Höpfner, Henning","last_name":"Höpfner"},{"full_name":"Fritsche, Carola","last_name":"Fritsche","first_name":"Carola"},{"full_name":"Ludwig, Arne","last_name":"Ludwig","first_name":"Arne"},{"first_name":"Astrid","last_name":"Ludwig","full_name":"Ludwig, Astrid"},{"full_name":"Stromberg, Frank","last_name":"Stromberg","first_name":"Frank"},{"last_name":"Wende","full_name":"Wende, Heiko","first_name":"Heiko"},{"last_name":"Keune","full_name":"Keune, Werner","first_name":"Werner"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"first_name":"Nils C.","full_name":"Gerhardt, Nils C.","last_name":"Gerhardt"},{"first_name":"Martin R.","last_name":"Hofmann","full_name":"Hofmann, Martin R."}],"date_created":"2019-01-30T12:58:14Z","volume":10,"status":"public","type":"journal_article","publication":"physica status solidi (c)","language":[{"iso":"eng"}],"_id":"7261","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}]},{"citation":{"bibtex":"@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10}, DOI={<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>}, number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner, Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg, Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D. and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }","short":"H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi (C) 10 (2013) 1214–1217.","mla":"Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i>, vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>.","apa":"Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H., … Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. <i>Physica Status Solidi (C)</i>, <i>10</i>(9), 1214–1217. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>","ieee":"H. Höpfner <i>et al.</i>, “Spin relaxation length in quantum dot spin LEDs,” <i>physica status solidi (c)</i>, vol. 10, no. 9, pp. 1214–1217, 2013.","chicago":"Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg, Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.” <i>Physica Status Solidi (C)</i> 10, no. 9 (2013): 1214–17. <a href=\"https://doi.org/10.1002/pssc.201200689\">https://doi.org/10.1002/pssc.201200689</a>.","ama":"Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot spin LEDs. <i>physica status solidi (c)</i>. 2013;10(9):1214-1217. doi:<a href=\"https://doi.org/10.1002/pssc.201200689\">10.1002/pssc.201200689</a>"},"page":"1214-1217","intvolume":"        10","year":"2013","issue":"9","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"doi":"10.1002/pssc.201200689","title":"Spin relaxation length in quantum dot spin LEDs","date_created":"2019-01-31T07:54:12Z","author":[{"last_name":"Höpfner","full_name":"Höpfner, Henning","first_name":"Henning"},{"last_name":"Fritsche","full_name":"Fritsche, Carola","first_name":"Carola"},{"first_name":"Arne","last_name":"Ludwig","full_name":"Ludwig, Arne"},{"last_name":"Ludwig","full_name":"Ludwig, Astrid","first_name":"Astrid"},{"full_name":"Stromberg, Frank","last_name":"Stromberg","first_name":"Frank"},{"first_name":"Heiko","last_name":"Wende","full_name":"Wende, Heiko"},{"first_name":"Werner","full_name":"Keune, Werner","last_name":"Keune"},{"id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter","first_name":"Dirk"},{"first_name":"Andreas D.","last_name":"Wieck","full_name":"Wieck, Andreas D."},{"full_name":"Gerhardt, Nils C.","last_name":"Gerhardt","first_name":"Nils C."},{"last_name":"Hofmann","full_name":"Hofmann, Martin R.","first_name":"Martin R."}],"volume":10,"publisher":"Wiley","date_updated":"2022-01-06T07:03:31Z","status":"public","type":"journal_article","publication":"physica status solidi (c)","language":[{"iso":"eng"}],"user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7281"},{"publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1","citation":{"mla":"Kemper, R. M., et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC (001).” <i>Physica Status Solidi (C)</i>, vol. 9, no. 3–4, Wiley, 2012, pp. 1028–31, doi:<a href=\"https://doi.org/10.1002/pssc.201100174\">10.1002/pssc.201100174</a>.","short":"R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier, T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, Physica Status Solidi (C) 9 (2012) 1028–1031.","bibtex":"@article{Kemper_Häberlen_Schupp_Weinl_Bürger_Ruth_Meier_Niendorf_Maier_Lischka_et al._2012, title={Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201100174\">10.1002/pssc.201100174</a>}, number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper, R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M. and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and et al.}, year={2012}, pages={1028–1031} }","apa":"Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., … Lindner, J. (2012). Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). <i>Physica Status Solidi (C)</i>, <i>9</i>(3–4), 1028–1031. <a href=\"https://doi.org/10.1002/pssc.201100174\">https://doi.org/10.1002/pssc.201100174</a>","ieee":"R. M. Kemper <i>et al.</i>, “Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001),” <i>physica status solidi (c)</i>, vol. 9, no. 3–4, pp. 1028–1031, 2012.","chicago":"Kemper, R. M., M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, Cedrik Meier, et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC (001).” <i>Physica Status Solidi (C)</i> 9, no. 3–4 (2012): 1028–31. <a href=\"https://doi.org/10.1002/pssc.201100174\">https://doi.org/10.1002/pssc.201100174</a>.","ama":"Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). <i>physica status solidi (c)</i>. 2012;9(3-4):1028-1031. doi:<a href=\"https://doi.org/10.1002/pssc.201100174\">10.1002/pssc.201100174</a>"},"page":"1028-1031","intvolume":"         9","date_updated":"2022-01-06T07:00:23Z","author":[{"first_name":"R. M.","last_name":"Kemper","full_name":"Kemper, R. M."},{"last_name":"Häberlen","full_name":"Häberlen, M.","first_name":"M."},{"first_name":"T.","full_name":"Schupp, T.","last_name":"Schupp"},{"first_name":"M.","last_name":"Weinl","full_name":"Weinl, M."},{"first_name":"M.","full_name":"Bürger, M.","last_name":"Bürger"},{"first_name":"M.","last_name":"Ruth","full_name":"Ruth, M."},{"last_name":"Meier","orcid":"https://orcid.org/0000-0002-3787-3572","full_name":"Meier, Cedrik","id":"20798","first_name":"Cedrik"},{"first_name":"T.","full_name":"Niendorf, T.","last_name":"Niendorf"},{"full_name":"Maier, H. J.","last_name":"Maier","first_name":"H. J."},{"first_name":"K.","last_name":"Lischka","full_name":"Lischka, K."},{"full_name":"As, D. J.","last_name":"As","first_name":"D. J."},{"last_name":"Lindner","full_name":"Lindner, Jörg","first_name":"Jörg"}],"volume":9,"doi":"10.1002/pssc.201100174","type":"journal_article","status":"public","_id":"4131","user_id":"20798","department":[{"_id":"286"},{"_id":"287"},{"_id":"15"},{"_id":"230"},{"_id":"35"}],"article_type":"original","file_date_updated":"2018-08-27T11:35:10Z","issue":"3-4","year":"2012","publisher":"Wiley","date_created":"2018-08-27T11:31:07Z","title":"Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)","publication":"physica status solidi (c)","abstract":[{"text":"We report an anisotropic formation of defects in cubic GaN grown on nano-patterned 3C-SiC/Si (001) by molecular\r\nbeam epitaxy. Nano-patterning of 3C-SiC/Si (001) is achieved by nanosphere lithography and a reactive\r\nion etching process. Atomic force microscopy and scanning electron microscopy show that the selectivearea-\r\ngrown cubic GaN nucleates in two structurally different domains, which most probably originate from the\r\nsubstrate. In adjacent domains the formation of defects, especially hexagonal inclusions, is different and leads to\r\ntwo different surface morphologies. The dominant phase within these domains was measured by electron backscatter\r\ndiffraction. Optical properties were investigated by micro-photoluminescence and cathodoluminescence spectroscopy.","lang":"eng"}],"file":[{"relation":"main_file","success":1,"content_type":"application/pdf","file_id":"4132","access_level":"closed","file_name":"Formation of defects in cubic GaN grown on nano-patterned 3C-SiC 001.pdf","file_size":848414,"date_created":"2018-08-27T11:35:10Z","creator":"hclaudia","date_updated":"2018-08-27T11:35:10Z"}],"ddc":["530"],"language":[{"iso":"eng"}]},{"status":"public","publication":"physica status solidi (c)","type":"journal_article","language":[{"iso":"eng"}],"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"user_id":"16199","_id":"13560","project":[{"_id":"52","name":"Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"page":"1361-1365","intvolume":"         9","citation":{"apa":"Hölscher, R., Sanna, S., &#38; Schmidt, W. G. (2012). Adsorption of OH and H at the LiNbO3(0001) surface. <i>Physica Status Solidi (c)</i>, <i>9</i>(6), 1361–1365. <a href=\"https://doi.org/10.1002/pssc.201100534\">https://doi.org/10.1002/pssc.201100534</a>","mla":"Hölscher, R., et al. “Adsorption of OH and H at the LiNbO3(0001) Surface.” <i>Physica Status Solidi (c)</i>, vol. 9, no. 6, 2012, pp. 1361–65, doi:<a href=\"https://doi.org/10.1002/pssc.201100534\">10.1002/pssc.201100534</a>.","short":"R. Hölscher, S. Sanna, W.G. Schmidt, Physica Status Solidi (c) 9 (2012) 1361–1365.","bibtex":"@article{Hölscher_Sanna_Schmidt_2012, title={Adsorption of OH and H at the LiNbO3(0001) surface}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201100534\">10.1002/pssc.201100534</a>}, number={6}, journal={physica status solidi (c)}, author={Hölscher, R. and Sanna, S. and Schmidt, Wolf Gero}, year={2012}, pages={1361–1365} }","chicago":"Hölscher, R., S. Sanna, and Wolf Gero Schmidt. “Adsorption of OH and H at the LiNbO3(0001) Surface.” <i>Physica Status Solidi (c)</i> 9, no. 6 (2012): 1361–65. <a href=\"https://doi.org/10.1002/pssc.201100534\">https://doi.org/10.1002/pssc.201100534</a>.","ieee":"R. Hölscher, S. Sanna, and W. G. Schmidt, “Adsorption of OH and H at the LiNbO3(0001) surface,” <i>physica status solidi (c)</i>, vol. 9, no. 6, pp. 1361–1365, 2012, doi: <a href=\"https://doi.org/10.1002/pssc.201100534\">10.1002/pssc.201100534</a>.","ama":"Hölscher R, Sanna S, Schmidt WG. Adsorption of OH and H at the LiNbO3(0001) surface. <i>physica status solidi (c)</i>. 2012;9(6):1361-1365. doi:<a href=\"https://doi.org/10.1002/pssc.201100534\">10.1002/pssc.201100534</a>"},"year":"2012","issue":"6","publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","doi":"10.1002/pssc.201100534","title":"Adsorption of OH and H at the LiNbO3(0001) surface","volume":9,"date_created":"2019-10-01T08:46:37Z","author":[{"last_name":"Hölscher","full_name":"Hölscher, R.","first_name":"R."},{"first_name":"S.","last_name":"Sanna","full_name":"Sanna, S."},{"first_name":"Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero"}],"date_updated":"2025-12-05T10:44:11Z"},{"file_date_updated":"2018-08-27T12:19:56Z","article_type":"original","user_id":"16199","department":[{"_id":"15"},{"_id":"286"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"}],"_id":"4136","status":"public","type":"journal_article","doi":"10.1002/pssc.201200198","author":[{"full_name":"Zirkelbach, F.","last_name":"Zirkelbach","first_name":"F."},{"first_name":"B.","full_name":"Stritzker, B.","last_name":"Stritzker"},{"first_name":"K.","last_name":"Nordlund","full_name":"Nordlund, K."},{"orcid":"0000-0002-2717-5076","last_name":"Schmidt","id":"468","full_name":"Schmidt, Wolf Gero","first_name":"Wolf Gero"},{"last_name":"Rauls","full_name":"Rauls, E.","first_name":"E."},{"first_name":"Jörg K. N.","full_name":"Lindner, Jörg K. N.","id":"20797","last_name":"Lindner"}],"volume":9,"date_updated":"2025-12-16T11:28:58Z","citation":{"chicago":"Zirkelbach, F., B. Stritzker, K. Nordlund, Wolf Gero Schmidt, E. Rauls, and Jörg K. N. Lindner. “First-Principles and Empirical Potential Simulation Study of Intrinsic and Carbon-Related Defects in Silicon.” <i>Physica Status Solidi (c)</i> 9, no. 10–11 (2012): 1968–73. <a href=\"https://doi.org/10.1002/pssc.201200198\">https://doi.org/10.1002/pssc.201200198</a>.","ieee":"F. Zirkelbach, B. Stritzker, K. Nordlund, W. G. Schmidt, E. Rauls, and J. K. N. Lindner, “First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon,” <i>physica status solidi (c)</i>, vol. 9, no. 10–11, pp. 1968–1973, 2012, doi: <a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>.","ama":"Zirkelbach F, Stritzker B, Nordlund K, Schmidt WG, Rauls E, Lindner JKN. First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. <i>physica status solidi (c)</i>. 2012;9(10-11):1968-1973. doi:<a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>","apa":"Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., &#38; Lindner, J. K. N. (2012). First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. <i>Physica Status Solidi (c)</i>, <i>9</i>(10–11), 1968–1973. <a href=\"https://doi.org/10.1002/pssc.201200198\">https://doi.org/10.1002/pssc.201200198</a>","short":"F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N. Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.","bibtex":"@article{Zirkelbach_Stritzker_Nordlund_Schmidt_Rauls_Lindner_2012, title={First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>}, number={10–11}, journal={physica status solidi (c)}, publisher={Wiley}, author={Zirkelbach, F. and Stritzker, B. and Nordlund, K. and Schmidt, Wolf Gero and Rauls, E. and Lindner, Jörg K. N.}, year={2012}, pages={1968–1973} }","mla":"Zirkelbach, F., et al. “First-Principles and Empirical Potential Simulation Study of Intrinsic and Carbon-Related Defects in Silicon.” <i>Physica Status Solidi (c)</i>, vol. 9, no. 10–11, Wiley, 2012, pp. 1968–73, doi:<a href=\"https://doi.org/10.1002/pssc.201200198\">10.1002/pssc.201200198</a>."},"page":"1968-1973","intvolume":"         9","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1","language":[{"iso":"eng"}],"ddc":["530"],"file":[{"access_level":"closed","file_name":"First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon.pdf","file_id":"4137","file_size":283206,"creator":"hclaudia","date_created":"2018-08-27T12:19:56Z","date_updated":"2018-08-27T12:19:56Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"abstract":[{"lang":"eng","text":"Results of atomistic simulations aimed at understanding precipitation of the highly attractive wide band gap\r\nsemiconductor material silicon carbide in silicon are presented. The study involves a systematic investigation of\r\nintrinsic and carbon-related defects as well as defect combinations and defect migration by both, quantummechanical\r\nfirst-principles as well as empirical potential methods. Comparing formation and activation energies,\r\nground-state structures of defects and defect combinations as well as energetically favorable agglomeration of\r\ndefects are predicted. Moreover, accurate ab initio calculations unveil limitations of the analytical method based\r\non a Tersoff-like bond order potential. A work-around is proposed in order to subsequently apply the highly efficient technique on large structures not accessible by first-principles methods. The outcome of both types of simulation provides a basic microscopic understanding of defect formation and structural evolution particularly at non-equilibrium conditions strongly deviated from the ground state as commonly found in SiC growth processes. A possible precipitation mechanism, which conforms well to experimental findings and clarifies contradictory views present in the literature is outlined."}],"publication":"physica status solidi (c)","title":"First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon","date_created":"2018-08-27T12:19:26Z","publisher":"Wiley","year":"2012","issue":"10-11"},{"issue":"4","publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","intvolume":"         8","page":"1235-1238","citation":{"ama":"Brecht B, Eckstein A, Silberhorn C. Controlling the correlations in frequency upconversion in PPLN and PPKTP waveguides. <i>physica status solidi (c)</i>. 2011;8(4):1235-1238. doi:<a href=\"https://doi.org/10.1002/pssc.201000872\">10.1002/pssc.201000872</a>","chicago":"Brecht, Benjamin, Andreas Eckstein, and Christine Silberhorn. “Controlling the Correlations in Frequency Upconversion in PPLN and PPKTP Waveguides.” <i>Physica Status Solidi (C)</i> 8, no. 4 (2011): 1235–38. <a href=\"https://doi.org/10.1002/pssc.201000872\">https://doi.org/10.1002/pssc.201000872</a>.","ieee":"B. Brecht, A. Eckstein, and C. Silberhorn, “Controlling the correlations in frequency upconversion in PPLN and PPKTP waveguides,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1235–1238, 2011.","short":"B. Brecht, A. Eckstein, C. Silberhorn, Physica Status Solidi (C) 8 (2011) 1235–1238.","mla":"Brecht, Benjamin, et al. “Controlling the Correlations in Frequency Upconversion in PPLN and PPKTP Waveguides.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 4, 2011, pp. 1235–38, doi:<a href=\"https://doi.org/10.1002/pssc.201000872\">10.1002/pssc.201000872</a>.","bibtex":"@article{Brecht_Eckstein_Silberhorn_2011, title={Controlling the correlations in frequency upconversion in PPLN and PPKTP waveguides}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000872\">10.1002/pssc.201000872</a>}, number={4}, journal={physica status solidi (c)}, author={Brecht, Benjamin and Eckstein, Andreas and Silberhorn, Christine}, year={2011}, pages={1235–1238} }","apa":"Brecht, B., Eckstein, A., &#38; Silberhorn, C. (2011). Controlling the correlations in frequency upconversion in PPLN and PPKTP waveguides. <i>Physica Status Solidi (C)</i>, <i>8</i>(4), 1235–1238. <a href=\"https://doi.org/10.1002/pssc.201000872\">https://doi.org/10.1002/pssc.201000872</a>"},"year":"2011","volume":8,"author":[{"first_name":"Benjamin","last_name":"Brecht","orcid":"0000-0003-4140-0556 ","id":"27150","full_name":"Brecht, Benjamin"},{"first_name":"Andreas","full_name":"Eckstein, Andreas","last_name":"Eckstein"},{"first_name":"Christine","full_name":"Silberhorn, Christine","id":"26263","last_name":"Silberhorn"}],"date_created":"2021-01-20T08:57:39Z","date_updated":"2022-01-06T06:54:42Z","doi":"10.1002/pssc.201000872","title":"Controlling the correlations in frequency upconversion in PPLN and PPKTP waveguides","publication":"physica status solidi (c)","type":"journal_article","status":"public","department":[{"_id":"15"}],"user_id":"27150","_id":"21047","language":[{"iso":"eng"}]},{"year":"2011","intvolume":"         8","page":"1165-1168","citation":{"mla":"Kurtze, H., et al. “Phonon-Assisted Exciton Spin Relaxation in (In,Ga)As/GaAs Quantum Dots.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 4, Wiley, 2011, pp. 1165–68, doi:<a href=\"https://doi.org/10.1002/pssc.201000791\">10.1002/pssc.201000791</a>.","short":"H. Kurtze, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physica Status Solidi (C) 8 (2011) 1165–1168.","bibtex":"@article{Kurtze_Yakovlev_Reuter_Wieck_Bayer_2011, title={Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000791\">10.1002/pssc.201000791</a>}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kurtze, H. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2011}, pages={1165–1168} }","apa":"Kurtze, H., Yakovlev, D. R., Reuter, D., Wieck, A. D., &#38; Bayer, M. (2011). Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots. <i>Physica Status Solidi (C)</i>, <i>8</i>(4), 1165–1168. <a href=\"https://doi.org/10.1002/pssc.201000791\">https://doi.org/10.1002/pssc.201000791</a>","ama":"Kurtze H, Yakovlev DR, Reuter D, Wieck AD, Bayer M. Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots. <i>physica status solidi (c)</i>. 2011;8(4):1165-1168. doi:<a href=\"https://doi.org/10.1002/pssc.201000791\">10.1002/pssc.201000791</a>","ieee":"H. Kurtze, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer, “Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1165–1168, 2011.","chicago":"Kurtze, H., D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Phonon-Assisted Exciton Spin Relaxation in (In,Ga)As/GaAs Quantum Dots.” <i>Physica Status Solidi (C)</i> 8, no. 4 (2011): 1165–68. <a href=\"https://doi.org/10.1002/pssc.201000791\">https://doi.org/10.1002/pssc.201000791</a>."},"publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","issue":"4","title":"Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots","doi":"10.1002/pssc.201000791","publisher":"Wiley","date_updated":"2022-01-06T07:03:45Z","volume":8,"date_created":"2019-02-14T10:36:19Z","author":[{"first_name":"H.","last_name":"Kurtze","full_name":"Kurtze, H."},{"first_name":"D. R.","full_name":"Yakovlev, D. R.","last_name":"Yakovlev"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"first_name":"A. D.","full_name":"Wieck, A. D.","last_name":"Wieck"},{"first_name":"M.","last_name":"Bayer","full_name":"Bayer, M."}],"status":"public","publication":"physica status solidi (c)","type":"journal_article","language":[{"iso":"eng"}],"_id":"7714","department":[{"_id":"15"},{"_id":"230"}],"user_id":"42514"},{"type":"journal_article","publication":"physica status solidi (c)","status":"public","user_id":"42514","department":[{"_id":"15"},{"_id":"230"}],"_id":"7335","language":[{"iso":"eng"}],"issue":"2","publication_status":"published","publication_identifier":{"issn":["1862-6351"]},"citation":{"chicago":"Krenner, Hubert J., Stefan Völk, Florian J. R. Schülein, Florian Knall, Achim Wixforth, Dirk Reuter, Andreas D. Wieck, Hyochul Kim, Tuan A. Truong, and Pierre M. Petroff. “Surface Acoustic Wave Controlled Carrier Injection into Self-Assembled Quantum Dots and Quantum Posts.” <i>Physica Status Solidi (C)</i> 9, no. 2 (2011): 407–10. <a href=\"https://doi.org/10.1002/pssc.201100236\">https://doi.org/10.1002/pssc.201100236</a>.","ieee":"H. J. Krenner <i>et al.</i>, “Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts,” <i>physica status solidi (c)</i>, vol. 9, no. 2, pp. 407–410, 2011.","ama":"Krenner HJ, Völk S, Schülein FJR, et al. Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts. <i>physica status solidi (c)</i>. 2011;9(2):407-410. doi:<a href=\"https://doi.org/10.1002/pssc.201100236\">10.1002/pssc.201100236</a>","apa":"Krenner, H. J., Völk, S., Schülein, F. J. R., Knall, F., Wixforth, A., Reuter, D., … Petroff, P. M. (2011). Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts. <i>Physica Status Solidi (C)</i>, <i>9</i>(2), 407–410. <a href=\"https://doi.org/10.1002/pssc.201100236\">https://doi.org/10.1002/pssc.201100236</a>","mla":"Krenner, Hubert J., et al. “Surface Acoustic Wave Controlled Carrier Injection into Self-Assembled Quantum Dots and Quantum Posts.” <i>Physica Status Solidi (C)</i>, vol. 9, no. 2, Wiley, 2011, pp. 407–10, doi:<a href=\"https://doi.org/10.1002/pssc.201100236\">10.1002/pssc.201100236</a>.","bibtex":"@article{Krenner_Völk_Schülein_Knall_Wixforth_Reuter_Wieck_Kim_Truong_Petroff_2011, title={Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts}, volume={9}, DOI={<a href=\"https://doi.org/10.1002/pssc.201100236\">10.1002/pssc.201100236</a>}, number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Krenner, Hubert J. and Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and Wixforth, Achim and Reuter, Dirk and Wieck, Andreas D. and Kim, Hyochul and Truong, Tuan A. and Petroff, Pierre M.}, year={2011}, pages={407–410} }","short":"H.J. Krenner, S. Völk, F.J.R. Schülein, F. Knall, A. Wixforth, D. Reuter, A.D. Wieck, H. Kim, T.A. Truong, P.M. Petroff, Physica Status Solidi (C) 9 (2011) 407–410."},"page":"407-410","intvolume":"         9","year":"2011","author":[{"first_name":"Hubert J.","full_name":"Krenner, Hubert J.","last_name":"Krenner"},{"full_name":"Völk, Stefan","last_name":"Völk","first_name":"Stefan"},{"last_name":"Schülein","full_name":"Schülein, Florian J. R.","first_name":"Florian J. R."},{"first_name":"Florian","full_name":"Knall, Florian","last_name":"Knall"},{"first_name":"Achim","last_name":"Wixforth","full_name":"Wixforth, Achim"},{"first_name":"Dirk","last_name":"Reuter","id":"37763","full_name":"Reuter, Dirk"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"first_name":"Hyochul","full_name":"Kim, Hyochul","last_name":"Kim"},{"full_name":"Truong, Tuan A.","last_name":"Truong","first_name":"Tuan A."},{"full_name":"Petroff, Pierre M.","last_name":"Petroff","first_name":"Pierre M."}],"date_created":"2019-01-31T11:18:49Z","volume":9,"date_updated":"2022-01-06T07:03:35Z","publisher":"Wiley","doi":"10.1002/pssc.201100236","title":"Surface acoustic wave controlled carrier injection into self-assembled quantum dots and quantum posts"},{"language":[{"iso":"eng"}],"ddc":["530"],"file":[{"date_updated":"2018-08-27T12:32:07Z","creator":"hclaudia","date_created":"2018-08-27T12:32:07Z","file_size":152623,"file_name":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.pdf","access_level":"closed","file_id":"4143","content_type":"application/pdf","success":1,"relation":"main_file"}],"abstract":[{"text":"This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized 3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a near-interface defect structure containing nanometric voids and dislocation loops by the implantation of He ions and subsequent thermal annealing. The structural features of this defect microstructure are investigated by transmission electron microscopy. High-resolution X-ray diffraction in a parallel beam configuration is used to quantify the strain state of the top SiC layer. Further annealing experiments were carried out in order to emulate typical process conditions for the growth of wide-bandgap semiconductors like, for example GaN. It is found that prolonged annealing at elevated temperatures leads to coarsening of the voids and to a much less efficient strain reduction. We show that this issue can be resolved by the co-implantation of oxygen to form highly thermally stable cavity/extended defect structures. The technique presented here may be useful for a variety of other thermally mismatched bulk/thin film couples as well.","lang":"eng"}],"publication":"physica status solidi (c)","title":"Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation","date_created":"2018-08-27T12:31:20Z","publisher":"Wiley","year":"2011","issue":"3","file_date_updated":"2018-08-27T12:32:07Z","article_type":"original","department":[{"_id":"286"}],"user_id":"55706","_id":"4142","status":"public","type":"journal_article","doi":"10.1002/pssc.201000342","volume":8,"author":[{"first_name":"Maik","last_name":"Häberlen","full_name":"Häberlen, Maik"},{"first_name":"Brian","full_name":"Murphy, Brian","last_name":"Murphy"},{"last_name":"Stritzker","full_name":"Stritzker, Bernd","first_name":"Bernd"},{"first_name":"Jörg","last_name":"Lindner","full_name":"Lindner, Jörg","id":"20797"}],"date_updated":"2022-01-06T07:00:24Z","intvolume":"         8","page":"944-947","citation":{"ama":"Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. <i>physica status solidi (c)</i>. 2011;8(3):944-947. doi:<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>","chicago":"Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” <i>Physica Status Solidi (C)</i> 8, no. 3 (2011): 944–47. <a href=\"https://doi.org/10.1002/pssc.201000342\">https://doi.org/10.1002/pssc.201000342</a>.","ieee":"M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” <i>physica status solidi (c)</i>, vol. 8, no. 3, pp. 944–947, 2011.","bibtex":"@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>}, number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen, Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947} }","short":"M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.","mla":"Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 3, Wiley, 2011, pp. 944–47, doi:<a href=\"https://doi.org/10.1002/pssc.201000342\">10.1002/pssc.201000342</a>.","apa":"Häberlen, M., Murphy, B., Stritzker, B., &#38; Lindner, J. (2011). Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. <i>Physica Status Solidi (C)</i>, <i>8</i>(3), 944–947. <a href=\"https://doi.org/10.1002/pssc.201000342\">https://doi.org/10.1002/pssc.201000342</a>"},"publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1","publication_status":"published"},{"publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","page":"1182-1185","intvolume":"         8","citation":{"apa":"Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner, A., &#38; Meier, C. (2011). Electrically driven intentionally positioned single quantum dot. <i>Physica Status Solidi (C)</i>, <i>8</i>(4), 1182–1185. <a href=\"https://doi.org/10.1002/pssc.201000828\">https://doi.org/10.1002/pssc.201000828</a>","mla":"Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single Quantum Dot.” <i>Physica Status Solidi (C)</i>, vol. 8, no. 4, Wiley, 2011, pp. 1182–85, doi:<a href=\"https://doi.org/10.1002/pssc.201000828\">10.1002/pssc.201000828</a>.","bibtex":"@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011, title={Electrically driven intentionally positioned single quantum dot}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000828\">10.1002/pssc.201000828</a>}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta, Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos, Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185} }","short":"M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.","ieee":"M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner, and C. Meier, “Electrically driven intentionally positioned single quantum dot,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1182–1185, 2011.","chicago":"Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos, Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned Single Quantum Dot.” <i>Physica Status Solidi (C)</i> 8, no. 4 (2011): 1182–85. <a href=\"https://doi.org/10.1002/pssc.201000828\">https://doi.org/10.1002/pssc.201000828</a>.","ama":"Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. Electrically driven intentionally positioned single quantum dot. <i>physica status solidi (c)</i>. 2011;8(4):1182-1185. doi:<a href=\"https://doi.org/10.1002/pssc.201000828\">10.1002/pssc.201000828</a>"},"volume":8,"author":[{"full_name":"Mehta, Minisha","last_name":"Mehta","first_name":"Minisha"},{"first_name":"Dirk","id":"37763","full_name":"Reuter, Dirk","last_name":"Reuter"},{"full_name":"Wieck, Andreas D.","last_name":"Wieck","first_name":"Andreas D."},{"first_name":"Steffen","full_name":"Michaelis de Vasconcellos, Steffen","last_name":"Michaelis de Vasconcellos"},{"first_name":"Artur","orcid":"0000-0002-5190-0944","last_name":"Zrenner","full_name":"Zrenner, Artur","id":"606"},{"orcid":"https://orcid.org/0000-0002-3787-3572","last_name":"Meier","full_name":"Meier, Cedrik","id":"20798","first_name":"Cedrik"}],"date_updated":"2022-01-06T07:01:00Z","doi":"10.1002/pssc.201000828","type":"journal_article","status":"public","department":[{"_id":"15"},{"_id":"230"},{"_id":"35"},{"_id":"287"}],"user_id":"20798","_id":"4378","article_type":"original","issue":"4","year":"2011","date_created":"2018-09-11T14:15:28Z","publisher":"Wiley","title":"Electrically driven intentionally positioned single quantum dot","publication":"physica status solidi (c)","abstract":[{"lang":"eng","text":"Using a combined all-ultra-high-vacuum process employing lateral patterning with focused ion beams and molecular beam epitaxy, site-selective growth of single (In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally positioned quantum dots in the intrinsic region of a p-i-n junction so that the quantum dots can be driven electrically. In this contribution, we will present our results on the morphological properties of the ion-beam modified surface on which the quantum dot nucleation occurs together with a characterization of the electrical and optoelectronic properties. We will demonstrate that a single, individual quantum dot can directly be electrically addressed."}],"language":[{"iso":"eng"}],"keyword":["molecular beam epitaxy","quantum dot","site control","electroluminescence"]},{"status":"public","type":"journal_article","publication":"physica status solidi c","keyword":["Condensed Matter Physics"],"language":[{"iso":"eng"}],"_id":"40186","user_id":"26263","department":[{"_id":"288"},{"_id":"15"}],"year":"2011","citation":{"apa":"Eckstein, A., Christ, A., Mosley, P. J., &#38; Silberhorn, C. (2011). Realistic g            <sup>(2)</sup>            measurement of a PDC source with single photon detectors in the presence of background. <i>Physica Status Solidi c</i>, <i>8</i>(4), 1216–1219. <a href=\"https://doi.org/10.1002/pssc.201000876\">https://doi.org/10.1002/pssc.201000876</a>","bibtex":"@article{Eckstein_Christ_Mosley_Silberhorn_2011, title={Realistic g            <sup>(2)</sup>            measurement of a PDC source with single photon detectors in the presence of background}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000876\">10.1002/pssc.201000876</a>}, number={4}, journal={physica status solidi c}, publisher={Wiley}, author={Eckstein, Andreas and Christ, Andreas and Mosley, Peter J. and Silberhorn, Christine}, year={2011}, pages={1216–1219} }","mla":"Eckstein, Andreas, et al. “Realistic g            <sup>(2)</sup>            Measurement of a PDC Source with Single Photon Detectors in the Presence of Background.” <i>Physica Status Solidi c</i>, vol. 8, no. 4, Wiley, 2011, pp. 1216–19, doi:<a href=\"https://doi.org/10.1002/pssc.201000876\">10.1002/pssc.201000876</a>.","short":"A. Eckstein, A. Christ, P.J. Mosley, C. Silberhorn, Physica Status Solidi c 8 (2011) 1216–1219.","ama":"Eckstein A, Christ A, Mosley PJ, Silberhorn C. Realistic g            <sup>(2)</sup>            measurement of a PDC source with single photon detectors in the presence of background. <i>physica status solidi c</i>. 2011;8(4):1216-1219. doi:<a href=\"https://doi.org/10.1002/pssc.201000876\">10.1002/pssc.201000876</a>","ieee":"A. Eckstein, A. Christ, P. J. Mosley, and C. Silberhorn, “Realistic g            <sup>(2)</sup>            measurement of a PDC source with single photon detectors in the presence of background,” <i>physica status solidi c</i>, vol. 8, no. 4, pp. 1216–1219, 2011, doi: <a href=\"https://doi.org/10.1002/pssc.201000876\">10.1002/pssc.201000876</a>.","chicago":"Eckstein, Andreas, Andreas Christ, Peter J. Mosley, and Christine Silberhorn. “Realistic g            <sup>(2)</sup>            Measurement of a PDC Source with Single Photon Detectors in the Presence of Background.” <i>Physica Status Solidi c</i> 8, no. 4 (2011): 1216–19. <a href=\"https://doi.org/10.1002/pssc.201000876\">https://doi.org/10.1002/pssc.201000876</a>."},"intvolume":"         8","page":"1216-1219","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"issue":"4","title":"Realistic g            <sup>(2)</sup>            measurement of a PDC source with single photon detectors in the presence of background","doi":"10.1002/pssc.201000876","date_updated":"2023-01-30T12:50:41Z","publisher":"Wiley","date_created":"2023-01-26T08:21:59Z","author":[{"full_name":"Eckstein, Andreas","last_name":"Eckstein","first_name":"Andreas"},{"first_name":"Andreas","last_name":"Christ","full_name":"Christ, Andreas"},{"last_name":"Mosley","full_name":"Mosley, Peter J.","first_name":"Peter J."},{"first_name":"Christine","last_name":"Silberhorn","full_name":"Silberhorn, Christine","id":"26263"}],"volume":8},{"type":"journal_article","status":"public","_id":"4089","department":[{"_id":"170"},{"_id":"35"},{"_id":"15"},{"_id":"61"},{"_id":"638"},{"_id":"894"},{"_id":"3"},{"_id":"230"}],"user_id":"16199","article_type":"original","file_date_updated":"2018-08-23T09:45:30Z","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]},"publication_status":"published","intvolume":"         8","page":"1125-1128","citation":{"apa":"Grodecka-Grad, A., &#38; Förstner, J. (2011). Phonon-assisted decoherence and tunneling in quantum dot molecules. <i>Physica Status Solidi (c)</i>, <i>8</i>(4), 1125–1128. <a href=\"https://doi.org/10.1002/pssc.201000824\">https://doi.org/10.1002/pssc.201000824</a>","mla":"Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Assisted Decoherence and Tunneling in Quantum Dot Molecules.” <i>Physica Status Solidi (c)</i>, vol. 8, no. 4, Wiley, 2011, pp. 1125–28, doi:<a href=\"https://doi.org/10.1002/pssc.201000824\">10.1002/pssc.201000824</a>.","short":"A. Grodecka-Grad, J. Förstner, Physica Status Solidi (c) 8 (2011) 1125–1128.","bibtex":"@article{Grodecka-Grad_Förstner_2011, title={Phonon-assisted decoherence and tunneling in quantum dot molecules}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000824\">10.1002/pssc.201000824</a>}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Grodecka-Grad, Anna and Förstner, Jens}, year={2011}, pages={1125–1128} }","chicago":"Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Assisted Decoherence and Tunneling in Quantum Dot Molecules.” <i>Physica Status Solidi (c)</i> 8, no. 4 (2011): 1125–28. <a href=\"https://doi.org/10.1002/pssc.201000824\">https://doi.org/10.1002/pssc.201000824</a>.","ieee":"A. Grodecka-Grad and J. Förstner, “Phonon-assisted decoherence and tunneling in quantum dot molecules,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1125–1128, 2011, doi: <a href=\"https://doi.org/10.1002/pssc.201000824\">10.1002/pssc.201000824</a>.","ama":"Grodecka-Grad A, Förstner J. Phonon-assisted decoherence and tunneling in quantum dot molecules. <i>physica status solidi (c)</i>. 2011;8(4):1125-1128. doi:<a href=\"https://doi.org/10.1002/pssc.201000824\">10.1002/pssc.201000824</a>"},"date_updated":"2025-12-16T08:12:02Z","volume":8,"author":[{"first_name":"Anna","full_name":"Grodecka-Grad, Anna","last_name":"Grodecka-Grad"},{"last_name":"Förstner","orcid":"0000-0001-7059-9862","id":"158","full_name":"Förstner, Jens","first_name":"Jens"}],"doi":"10.1002/pssc.201000824","publication":"physica status solidi (c)","abstract":[{"lang":"eng","text":"We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantumkinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal electron-phonon couplings representing real and virtual processes with relevant acoustic phonons. We show that the relaxation is dominated by phononassisted electron tunneling between constituent quantum dots and occurs on a picosecond time scale. The dependence of the time evolution of the quantum dot occupation probabilities on the energy mismatch between the quantum dots is studied in detail."}],"file":[{"content_type":"application/pdf","relation":"main_file","success":1,"creator":"hclaudia","date_created":"2018-08-23T09:45:30Z","date_updated":"2018-08-23T09:45:30Z","file_id":"4090","file_name":"2011 Grodecka-Grad,Förstner_ Phonon-assisted decoherence and tunneling in quantum dot molecules.pdf","access_level":"closed","file_size":202905}],"keyword":["tet_topic_qd"],"ddc":["530"],"language":[{"iso":"eng"}],"issue":"4","year":"2011","publisher":"Wiley","date_created":"2018-08-23T09:43:57Z","title":"Phonon-assisted decoherence and tunneling in quantum dot molecules"},{"article_type":"original","file_date_updated":"2018-08-22T10:41:43Z","_id":"4049","user_id":"16199","department":[{"_id":"15"},{"_id":"293"},{"_id":"230"},{"_id":"170"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"status":"public","type":"journal_article","doi":"10.1002/pssc.201000831","date_updated":"2025-12-16T11:21:35Z","author":[{"last_name":"Thanh Duc","full_name":"Thanh Duc, Huynh","first_name":"Huynh"},{"last_name":"Förstner","orcid":"0000-0001-7059-9862","full_name":"Förstner, Jens","id":"158","first_name":"Jens"},{"last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344","first_name":"Torsten"},{"last_name":"Priyadarshi","full_name":"Priyadarshi, Shekhar","first_name":"Shekhar"},{"first_name":"Ana Maria","full_name":"Racu, Ana Maria","last_name":"Racu"},{"full_name":"Pierz, Klaus","last_name":"Pierz","first_name":"Klaus"},{"first_name":"Uwe","full_name":"Siegner, Uwe","last_name":"Siegner"},{"last_name":"Bieler","full_name":"Bieler, Mark","first_name":"Mark"}],"volume":8,"citation":{"short":"H. Thanh Duc, J. Förstner, T. Meier, S. Priyadarshi, A.M. Racu, K. Pierz, U. Siegner, M. Bieler, Physica Status Solidi (c) 8 (2011) 1137–1140.","bibtex":"@article{Thanh Duc_Förstner_Meier_Priyadarshi_Racu_Pierz_Siegner_Bieler_2011, title={Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000831\">10.1002/pssc.201000831</a>}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Thanh Duc, Huynh and Förstner, Jens and Meier, Torsten and Priyadarshi, Shekhar and Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2011}, pages={1137–1140} }","mla":"Thanh Duc, Huynh, et al. “Oscillatory Excitation Energy Dependence of Injection Currents in GaAs/AlGaAs Quantum Wells.” <i>Physica Status Solidi (c)</i>, vol. 8, no. 4, Wiley, 2011, pp. 1137–40, doi:<a href=\"https://doi.org/10.1002/pssc.201000831\">10.1002/pssc.201000831</a>.","apa":"Thanh Duc, H., Förstner, J., Meier, T., Priyadarshi, S., Racu, A. M., Pierz, K., Siegner, U., &#38; Bieler, M. (2011). Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells. <i>Physica Status Solidi (c)</i>, <i>8</i>(4), 1137–1140. <a href=\"https://doi.org/10.1002/pssc.201000831\">https://doi.org/10.1002/pssc.201000831</a>","ama":"Thanh Duc H, Förstner J, Meier T, et al. Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells. <i>physica status solidi (c)</i>. 2011;8(4):1137-1140. doi:<a href=\"https://doi.org/10.1002/pssc.201000831\">10.1002/pssc.201000831</a>","chicago":"Thanh Duc, Huynh, Jens Förstner, Torsten Meier, Shekhar Priyadarshi, Ana Maria Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Oscillatory Excitation Energy Dependence of Injection Currents in GaAs/AlGaAs Quantum Wells.” <i>Physica Status Solidi (c)</i> 8, no. 4 (2011): 1137–40. <a href=\"https://doi.org/10.1002/pssc.201000831\">https://doi.org/10.1002/pssc.201000831</a>.","ieee":"H. Thanh Duc <i>et al.</i>, “Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1137–1140, 2011, doi: <a href=\"https://doi.org/10.1002/pssc.201000831\">10.1002/pssc.201000831</a>."},"page":"1137-1140","intvolume":"         8","publication_status":"published","has_accepted_license":"1","publication_identifier":{"issn":["1862-6351"]},"ddc":["530"],"keyword":["tet_topic_qw"],"language":[{"iso":"eng"}],"abstract":[{"text":"The injection of photocurrents by femtosecond laser pulses in (110)-orientedGaAs/AlGaAs quantum wells is\r\ninvestigated theoretically and experimentally. The roomtemperature measurements show an oscillatory dependence\r\nof the injection current amplitude and direction on the excitation photon energy. Microscopic calculations using the semiconductor Bloch equations that are set up on the basis of k.p band structure calculations provide a detailed understanding of the experimental findings.","lang":"eng"}],"file":[{"success":1,"relation":"main_file","content_type":"application/pdf","file_size":324789,"access_level":"closed","file_name":"2011 Duc et al_Oscillatory excitation energy dependence of injection currents in GaAs-AIGaAs quantum wells.pdf","file_id":"4050","date_updated":"2018-08-22T10:41:43Z","date_created":"2018-08-22T10:41:43Z","creator":"hclaudia"}],"publication":"physica status solidi (c)","title":"Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs quantum wells","publisher":"Wiley","date_created":"2018-08-22T10:38:59Z","year":"2011","issue":"4"},{"abstract":[{"text":"We numerically investigate the coupling between circular resonators and study strong light‐matter coupling of single as well as multiple circular resonators to quantum‐mechanical resonators in two dimensional model simulations. For all cases, the computed resonances of the coupled system as function of the detuning show anti‐crossings.\r\n\r\nThe obtained mode splittings of coupled optical resonators are strongly depending on distance and cluster in almost degenerate eigenstates for large distances, as is known from coupled resonator optical waveguides. Vacuum Rabi splitting is observed for a quantum dot strongly coupled to eigenmodes of single perfectly cylindrical resonators. ","lang":"eng"}],"file":[{"access_level":"closed","file_name":"2011 Delcair,Meier,Förstner_Numerical investigation of the coupling between microdisk modes and quantum dots.pdf","file_id":"4119","file_size":281469,"date_created":"2018-08-27T09:07:57Z","creator":"hclaudia","date_updated":"2018-08-27T09:07:57Z","relation":"main_file","success":1,"content_type":"application/pdf"}],"publication":"physica status solidi (c)","keyword":["tet_topic_phc","tet_topic_microdisk"],"ddc":["530"],"language":[{"iso":"eng"}],"year":"2011","issue":"4","title":"Numerical investigation of the coupling between microdisk modes and quantum dots","publisher":"Wiley","date_created":"2018-08-27T09:06:46Z","status":"public","type":"journal_article","article_type":"original","file_date_updated":"2018-08-27T09:07:57Z","_id":"4118","department":[{"_id":"15"},{"_id":"230"},{"_id":"293"},{"_id":"170"},{"_id":"35"},{"_id":"34"},{"_id":"61"}],"user_id":"16199","page":"1254-1257","intvolume":"         8","citation":{"chicago":"Declair, S., Torsten Meier, and Jens Förstner. “Numerical Investigation of the Coupling between Microdisk Modes and Quantum Dots.” <i>Physica Status Solidi (c)</i> 8, no. 4 (2011): 1254–57. <a href=\"https://doi.org/10.1002/pssc.201000869\">https://doi.org/10.1002/pssc.201000869</a>.","ieee":"S. Declair, T. Meier, and J. Förstner, “Numerical investigation of the coupling between microdisk modes and quantum dots,” <i>physica status solidi (c)</i>, vol. 8, no. 4, pp. 1254–1257, 2011, doi: <a href=\"https://doi.org/10.1002/pssc.201000869\">10.1002/pssc.201000869</a>.","ama":"Declair S, Meier T, Förstner J. Numerical investigation of the coupling between microdisk modes and quantum dots. <i>physica status solidi (c)</i>. 2011;8(4):1254-1257. doi:<a href=\"https://doi.org/10.1002/pssc.201000869\">10.1002/pssc.201000869</a>","short":"S. Declair, T. Meier, J. Förstner, Physica Status Solidi (c) 8 (2011) 1254–1257.","bibtex":"@article{Declair_Meier_Förstner_2011, title={Numerical investigation of the coupling between microdisk modes and quantum dots}, volume={8}, DOI={<a href=\"https://doi.org/10.1002/pssc.201000869\">10.1002/pssc.201000869</a>}, number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Declair, S. and Meier, Torsten and Förstner, Jens}, year={2011}, pages={1254–1257} }","mla":"Declair, S., et al. “Numerical Investigation of the Coupling between Microdisk Modes and Quantum Dots.” <i>Physica Status Solidi (c)</i>, vol. 8, no. 4, Wiley, 2011, pp. 1254–57, doi:<a href=\"https://doi.org/10.1002/pssc.201000869\">10.1002/pssc.201000869</a>.","apa":"Declair, S., Meier, T., &#38; Förstner, J. (2011). Numerical investigation of the coupling between microdisk modes and quantum dots. <i>Physica Status Solidi (c)</i>, <i>8</i>(4), 1254–1257. <a href=\"https://doi.org/10.1002/pssc.201000869\">https://doi.org/10.1002/pssc.201000869</a>"},"publication_identifier":{"issn":["1862-6351"]},"has_accepted_license":"1","publication_status":"published","doi":"10.1002/pssc.201000869","date_updated":"2025-12-16T11:22:02Z","volume":8,"author":[{"first_name":"S.","last_name":"Declair","full_name":"Declair, S."},{"first_name":"Torsten","last_name":"Meier","orcid":"0000-0001-8864-2072","full_name":"Meier, Torsten","id":"344"},{"first_name":"Jens","orcid":"0000-0001-7059-9862","last_name":"Förstner","id":"158","full_name":"Förstner, Jens"}]},{"issue":"2","publication_status":"published","publication_identifier":{"issn":["1862-6351","1610-1642"]},"citation":{"apa":"Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K., Gensch, M., Esser, N., Fleischer, K., &#38; McGilp, J. F. (2010). Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>Physica Status Solidi (c)</i>, <i>7</i>(2), 133–136. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>","short":"S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.","bibtex":"@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010, title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles}, volume={7}, DOI={<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>}, number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt, Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }","mla":"Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i>, vol. 7, no. 2, 2010, pp. 133–36, doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>.","chicago":"Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” <i>Physica Status Solidi (c)</i> 7, no. 2 (2010): 133–36. <a href=\"https://doi.org/10.1002/pssc.200982413\">https://doi.org/10.1002/pssc.200982413</a>.","ieee":"S. Wippermann <i>et al.</i>, “Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles,” <i>physica status solidi (c)</i>, vol. 7, no. 2, pp. 133–136, 2010, doi: <a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>.","ama":"Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. <i>physica status solidi (c)</i>. 2010;7(2):133-136. doi:<a href=\"https://doi.org/10.1002/pssc.200982413\">10.1002/pssc.200982413</a>"},"page":"133-136","intvolume":"         7","year":"2010","author":[{"last_name":"Wippermann","full_name":"Wippermann, S.","first_name":"S."},{"id":"468","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076","last_name":"Schmidt","first_name":"Wolf Gero"},{"last_name":"Bechstedt","full_name":"Bechstedt, F.","first_name":"F."},{"first_name":"S.","full_name":"Chandola, S.","last_name":"Chandola"},{"first_name":"K.","full_name":"Hinrichs, K.","last_name":"Hinrichs"},{"first_name":"M.","full_name":"Gensch, M.","last_name":"Gensch"},{"first_name":"N.","last_name":"Esser","full_name":"Esser, N."},{"full_name":"Fleischer, K.","last_name":"Fleischer","first_name":"K."},{"last_name":"McGilp","full_name":"McGilp, J. F.","first_name":"J. F."}],"date_created":"2019-10-01T14:34:59Z","volume":7,"date_updated":"2025-12-05T12:45:21Z","doi":"10.1002/pssc.200982413","title":"Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles","type":"journal_article","publication":"physica status solidi (c)","status":"public","user_id":"16199","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"35"},{"_id":"230"},{"_id":"27"}],"project":[{"name":"Computing Resources Provided by the Paderborn Center for Parallel Computing","_id":"52"}],"_id":"13581","language":[{"iso":"eng"}]}]