---
_id: '3888'
abstract:
- lang: eng
text: 'We successfully developed a process to fabricate freestanding cubic aluminium
nitride (c-AlN) membranes containing cubic gallium nitride (c-GaN) quantum dots
(QDs). The samples were grown by plasma assisted molecular beam epitaxy (MBE).
To realize the photonic crystal (PhC) membrane we have chosen a triangular array
of holes. The array was fabricated by electron beam lithography and several steps
of reactive ion etching (RIE) with the help of a hard mask and an undercut of
the active layer. The r/a- ratio of 0.35 was deter- mined by numerical simulations
to obtain a preferably wide photonic band gap. Micro-photoluminescence (μ-PL)
measurements of the photonic crystals, in particular of a H1 and a L3 cavity,
and the emission of the QD ensemble were performed to characterize the samples.
The PhCs show high quality factors of 4400 for the H1 cavity and about 5000/3000
for two different modes of the L3 cavity, respectively. The energy of the fundamental
modes is in good agreement to the numerical simulations. '
article_type: original
author:
- first_name: Sarah
full_name: Blumenthal, Sarah
last_name: Blumenthal
- first_name: Matthias
full_name: Bürger, Matthias
last_name: Bürger
- first_name: Andre
full_name: Hildebrandt, Andre
last_name: Hildebrandt
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Nils
full_name: Weber, Nils
last_name: Weber
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Donat J.
full_name: As, Donat J.
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
citation:
ama: Blumenthal S, Bürger M, Hildebrandt A, et al. Fabrication and characterization
of two-dimensional cubic AlN photonic crystal membranes containing zincblende
GaN quantum dots. physica status solidi (c). 2016;13(5-6):292-296. doi:10.1002/pssc.201600010
apa: Blumenthal, S., Bürger, M., Hildebrandt, A., Förstner, J., Weber, N., Meier,
C., Reuter, D., & As, D. J. (2016). Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots. Physica
Status Solidi (c), 13(5–6), 292–296. https://doi.org/10.1002/pssc.201600010
bibtex: '@article{Blumenthal_Bürger_Hildebrandt_Förstner_Weber_Meier_Reuter_As_2016,
title={Fabrication and characterization of two-dimensional cubic AlN photonic
crystal membranes containing zincblende GaN quantum dots}, volume={13}, DOI={10.1002/pssc.201600010}, number={5–6},
journal={physica status solidi (c)}, publisher={Wiley}, author={Blumenthal, Sarah
and Bürger, Matthias and Hildebrandt, Andre and Förstner, Jens and Weber, Nils
and Meier, Cedrik and Reuter, Dirk and As, Donat J.}, year={2016}, pages={292–296}
}'
chicago: 'Blumenthal, Sarah, Matthias Bürger, Andre Hildebrandt, Jens Förstner,
Nils Weber, Cedrik Meier, Dirk Reuter, and Donat J. As. “Fabrication and Characterization
of Two-Dimensional Cubic AlN Photonic Crystal Membranes Containing Zincblende
GaN Quantum Dots.” Physica Status Solidi (c) 13, no. 5–6 (2016): 292–96.
https://doi.org/10.1002/pssc.201600010.'
ieee: 'S. Blumenthal et al., “Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots,”
physica status solidi (c), vol. 13, no. 5–6, pp. 292–296, 2016, doi: 10.1002/pssc.201600010.'
mla: Blumenthal, Sarah, et al. “Fabrication and Characterization of Two-Dimensional
Cubic AlN Photonic Crystal Membranes Containing Zincblende GaN Quantum Dots.”
Physica Status Solidi (c), vol. 13, no. 5–6, Wiley, 2016, pp. 292–96, doi:10.1002/pssc.201600010.
short: S. Blumenthal, M. Bürger, A. Hildebrandt, J. Förstner, N. Weber, C. Meier,
D. Reuter, D.J. As, Physica Status Solidi (c) 13 (2016) 292–296.
date_created: 2018-08-13T09:14:58Z
date_updated: 2023-10-09T09:06:08Z
ddc:
- '530'
department:
- _id: '61'
- _id: '284'
- _id: '290'
- _id: '292'
- _id: '287'
- _id: '35'
- _id: '230'
doi: 10.1002/pssc.201600010
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-13T09:20:05Z
date_updated: 2018-08-13T09:20:05Z
file_id: '3889'
file_name: 2016-04 Blumenthal_et_al_Fabrication and characterization of two-dimensional
cubic AlN photonic crystal membranes containing zincblende GaN quantum dots_physica_status_solidi_(c).pdf
file_size: 1119165
relation: main_file
success: 1
file_date_updated: 2018-08-13T09:20:05Z
has_accepted_license: '1'
intvolume: ' 13'
issue: 5-6
keyword:
- tet_topic_phc
- tet_topic_qd
language:
- iso: eng
page: 292-296
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Fabrication and characterization of two-dimensional cubic AlN photonic crystal
membranes containing zincblende GaN quantum dots
type: journal_article
user_id: '14931'
volume: 13
year: '2016'
...
---
_id: '4024'
abstract:
- lang: eng
text: "We investigate the formation of cubic GaN quantum dots (QDs) on pseudomorphic
strained cubic AlN layers on \r\n3C-SiC (001) substrates grown by means of molecular
beam epitaxy. Surface morphologies of various QD sizes \r\nand densities were
obtained from uncapped samples by atomic force microscopy. These results were
correlated \r\nwith similar but capped samples by photoluminescence experiments.
The QD density varies by one order of \r\nmagnitude from ~1x10^10 cm^-2 to ~1x10^11
cm^-2 as a function of the GaN coverage on the surface. The initial layer \r\nthickness
for the creation of cubic GaN QDs on cubic AlN was obtained to 1.95 monolayers
by a comparison \r\nbetween the experimental results and an analytical model.
Our results reveal the strain-driven Stranski-Krastanov \r\ngrowth mode as the
main formation process of the cubic GaN QDs. "
article_type: original
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D. J.
full_name: As, D. J.
last_name: As
citation:
ama: Bürger M, Lindner J, Reuter D, As DJ. Investigation of cubic GaN quantum dots
grown by the Stranski-Krastanov process. physica status solidi (c). 2015;12(4-5):452-455.
doi:10.1002/pssc.201400132
apa: Bürger, M., Lindner, J., Reuter, D., & As, D. J. (2015). Investigation
of cubic GaN quantum dots grown by the Stranski-Krastanov process. Physica
Status Solidi (C), 12(4–5), 452–455. https://doi.org/10.1002/pssc.201400132
bibtex: '@article{Bürger_Lindner_Reuter_As_2015, title={Investigation of cubic GaN
quantum dots grown by the Stranski-Krastanov process}, volume={12}, DOI={10.1002/pssc.201400132},
number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger,
M. and Lindner, Jörg and Reuter, Dirk and As, D. J.}, year={2015}, pages={452–455}
}'
chicago: 'Bürger, M., Jörg Lindner, Dirk Reuter, and D. J. As. “Investigation of
Cubic GaN Quantum Dots Grown by the Stranski-Krastanov Process.” Physica Status
Solidi (C) 12, no. 4–5 (2015): 452–55. https://doi.org/10.1002/pssc.201400132.'
ieee: M. Bürger, J. Lindner, D. Reuter, and D. J. As, “Investigation of cubic GaN
quantum dots grown by the Stranski-Krastanov process,” physica status solidi
(c), vol. 12, no. 4–5, pp. 452–455, 2015.
mla: Bürger, M., et al. “Investigation of Cubic GaN Quantum Dots Grown by the Stranski-Krastanov
Process.” Physica Status Solidi (C), vol. 12, no. 4–5, Wiley, 2015, pp.
452–55, doi:10.1002/pssc.201400132.
short: M. Bürger, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (C) 12 (2015)
452–455.
date_created: 2018-08-21T13:07:35Z
date_updated: 2022-01-06T07:00:08Z
ddc:
- '530'
department:
- _id: '286'
- _id: '292'
- _id: '15'
doi: 10.1002/pssc.201400132
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T13:10:09Z
date_updated: 2018-08-21T13:10:09Z
file_id: '4025'
file_name: Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov
process.pdf
file_size: 650052
relation: main_file
success: 1
file_date_updated: 2018-08-21T13:10:09Z
has_accepted_license: '1'
intvolume: ' 12'
issue: 4-5
language:
- iso: eng
page: 452-455
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Investigation of cubic GaN quantum dots grown by the Stranski-Krastanov process
type: journal_article
user_id: '42514'
volume: 12
year: '2015'
...
---
_id: '4027'
abstract:
- lang: eng
text: "We report the influence of {111} stacking faults on the cathodoluminescence
(CL) emission characteristics of\r\ncubic GaN (c-GaN) films and cubic GaN/AlN
multiquantum wells. Transmission electron microscopy\r\n(TEM) measurements indicate
that stacking faults (SFs) on the {111} planes are the predominant crystallographic\r\ndefects
in epitaxial films, which were grown on 3CSiC/ Si (001) substrates by plasma-assisted
molecular\r\nbeam epitaxy. The correlation of the SFs and the luminescence output
is evidenced with a CL setup\r\nintegrated in a scanning TEM (STEM). By comparing
the STEM images and the simultaneously measured CL\r\nsignals it is demonstrated
that SFs in these films lead to a reduced CL emission intensity. Furthermore,
the CL\r\nemission intensity is shown to increase with increasing film thickness
and decreasing SF density. This\r\ncorrelation can be connected to the reduction
of the full width at half maximum of X-ray diffraction rocking\r\ncurves with
increasing film thickness of c-GaN films."
article_type: original
author:
- first_name: R. M.
full_name: Kemper, R. M.
last_name: Kemper
- first_name: P.
full_name: Veit, P.
last_name: Veit
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: A.
full_name: Dempewolf, A.
last_name: Dempewolf
- first_name: T.
full_name: Wecker, T.
last_name: Wecker
- first_name: F.
full_name: Bertram, F.
last_name: Bertram
- first_name: J.
full_name: Christen, J.
last_name: Christen
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: D. J.
full_name: As, D. J.
last_name: As
citation:
ama: Kemper RM, Veit P, Mietze C, et al. STEM-CL investigations on the influence
of stacking faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN
multi-quantum wells. physica status solidi (c). 2015;12(4-5):469-472. doi:10.1002/pssc.201400154
apa: Kemper, R. M., Veit, P., Mietze, C., Dempewolf, A., Wecker, T., Bertram, F.,
… As, D. J. (2015). STEM-CL investigations on the influence of stacking faults
on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum
wells. Physica Status Solidi (C), 12(4–5), 469–472. https://doi.org/10.1002/pssc.201400154
bibtex: '@article{Kemper_Veit_Mietze_Dempewolf_Wecker_Bertram_Christen_Lindner_As_2015,
title={STEM-CL investigations on the influence of stacking faults on the optical
emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells}, volume={12},
DOI={10.1002/pssc.201400154},
number={4–5}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper,
R. M. and Veit, P. and Mietze, C. and Dempewolf, A. and Wecker, T. and Bertram,
F. and Christen, J. and Lindner, Jörg and As, D. J.}, year={2015}, pages={469–472}
}'
chicago: 'Kemper, R. M., P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram,
J. Christen, Jörg Lindner, and D. J. As. “STEM-CL Investigations on the Influence
of Stacking Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN
Multi-Quantum Wells.” Physica Status Solidi (C) 12, no. 4–5 (2015): 469–72.
https://doi.org/10.1002/pssc.201400154.'
ieee: R. M. Kemper et al., “STEM-CL investigations on the influence of stacking
faults on the optical emission of cubic GaN epilayers and cubic GaN/AlN multi-quantum
wells,” physica status solidi (c), vol. 12, no. 4–5, pp. 469–472, 2015.
mla: Kemper, R. M., et al. “STEM-CL Investigations on the Influence of Stacking
Faults on the Optical Emission of Cubic GaN Epilayers and Cubic GaN/AlN Multi-Quantum
Wells.” Physica Status Solidi (C), vol. 12, no. 4–5, Wiley, 2015, pp. 469–72,
doi:10.1002/pssc.201400154.
short: R.M. Kemper, P. Veit, C. Mietze, A. Dempewolf, T. Wecker, F. Bertram, J.
Christen, J. Lindner, D.J. As, Physica Status Solidi (C) 12 (2015) 469–472.
date_created: 2018-08-21T13:17:46Z
date_updated: 2022-01-06T07:00:08Z
ddc:
- '530'
department:
- _id: '286'
- _id: '15'
doi: 10.1002/pssc.201400154
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-21T13:18:38Z
date_updated: 2018-08-21T13:18:38Z
file_id: '4028'
file_name: STEM-CL investigations on the influence of stacking faults on the optical
emission of cubic GaN epilayers and cubic GaN-AlN multi-quantum wells.pdf
file_size: 447603
relation: main_file
success: 1
file_date_updated: 2018-08-21T13:18:38Z
has_accepted_license: '1'
intvolume: ' 12'
issue: 4-5
language:
- iso: eng
page: 469-472
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: STEM-CL investigations on the influence of stacking faults on the optical emission
of cubic GaN epilayers and cubic GaN/AlN multi-quantum wells
type: journal_article
user_id: '55706'
volume: 12
year: '2015'
...
---
_id: '7238'
author:
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: G.
full_name: Callsen, G.
last_name: Callsen
- first_name: T.
full_name: Kure, T.
last_name: Kure
- first_name: A.
full_name: Hoffmann, A.
last_name: Hoffmann
- first_name: A.
full_name: Pawlis, A.
last_name: Pawlis
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: D. J.
full_name: As, D. J.
last_name: As
citation:
ama: Bürger M, Callsen G, Kure T, et al. Non-polar GaN quantum dots integrated into
high quality cubic AlN microdisks. physica status solidi (c). 2014;11(3-4):790-793.
doi:10.1002/pssc.201300411
apa: Bürger, M., Callsen, G., Kure, T., Hoffmann, A., Pawlis, A., Reuter, D., &
As, D. J. (2014). Non-polar GaN quantum dots integrated into high quality cubic
AlN microdisks. Physica Status Solidi (C), 11(3–4), 790–793. https://doi.org/10.1002/pssc.201300411
bibtex: '@article{Bürger_Callsen_Kure_Hoffmann_Pawlis_Reuter_As_2014, title={Non-polar
GaN quantum dots integrated into high quality cubic AlN microdisks}, volume={11},
DOI={10.1002/pssc.201300411},
number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Bürger,
M. and Callsen, G. and Kure, T. and Hoffmann, A. and Pawlis, A. and Reuter, Dirk
and As, D. J.}, year={2014}, pages={790–793} }'
chicago: 'Bürger, M., G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, Dirk Reuter,
and D. J. As. “Non-Polar GaN Quantum Dots Integrated into High Quality Cubic AlN
Microdisks.” Physica Status Solidi (C) 11, no. 3–4 (2014): 790–93. https://doi.org/10.1002/pssc.201300411.'
ieee: M. Bürger et al., “Non-polar GaN quantum dots integrated into high
quality cubic AlN microdisks,” physica status solidi (c), vol. 11, no.
3–4, pp. 790–793, 2014.
mla: Bürger, M., et al. “Non-Polar GaN Quantum Dots Integrated into High Quality
Cubic AlN Microdisks.” Physica Status Solidi (C), vol. 11, no. 3–4, Wiley,
2014, pp. 790–93, doi:10.1002/pssc.201300411.
short: M. Bürger, G. Callsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, D.J. As,
Physica Status Solidi (C) 11 (2014) 790–793.
date_created: 2019-01-29T12:47:30Z
date_updated: 2022-01-06T07:03:30Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201300411
intvolume: ' 11'
issue: 3-4
language:
- iso: eng
page: 790-793
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Non-polar GaN quantum dots integrated into high quality cubic AlN microdisks
type: journal_article
user_id: '42514'
volume: 11
year: '2014'
...
---
_id: '4070'
abstract:
- lang: eng
text: 'We report for the first time on the growth of cubic AlN/GaN multi‐quantum
wells (MQWs) on pre‐patterned 3C‐SiC/Si (001) substrates. The sample structure
consists of 10 periods of 2 nm c‐AlN barriers with a 4 nm c‐GaN layer in between,
which were grown on 3C‐SiC post shaped structures by means of molecular beam epitaxy.
Substrate patterning has been realized by electron beam lithography and a reactive
ion etching process. The 3C‐SiC posts have a length of about 550 nm and a height
of about 700 nm. (Scanning) transmission electron microscopy studies show that
the morphology of the MQWs is clearly influenced by {111} stacking faults, modulating
the local growth rate. Further, the growth at the edges of the surface pattern
is investigated. The MQW layers cover the 90° edges by developing low‐index facets
rather than by forming a conformal system of 90° angled layers. '
article_type: original
author:
- first_name: R. M.
full_name: Kemper, R. M.
last_name: Kemper
- first_name: C.
full_name: Mietze, C.
last_name: Mietze
- first_name: L.
full_name: Hiller, L.
last_name: Hiller
- first_name: T.
full_name: Stauden, T.
last_name: Stauden
- first_name: J.
full_name: Pezoldt, J.
last_name: Pezoldt
- first_name: D.
full_name: Meertens, D.
last_name: Meertens
- first_name: M.
full_name: Luysberg, M.
last_name: Luysberg
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Kemper RM, Mietze C, Hiller L, et al. Cubic GaN/AlN multi-quantum wells grown
on pre-patterned 3C-SiC/Si (001). physica status solidi (c). 2014;11(2):265-268.
doi:10.1002/pssc.201300292
apa: Kemper, R. M., Mietze, C., Hiller, L., Stauden, T., Pezoldt, J., Meertens,
D., … Lindner, J. (2014). Cubic GaN/AlN multi-quantum wells grown on pre-patterned
3C-SiC/Si (001). Physica Status Solidi (C), 11(2), 265–268. https://doi.org/10.1002/pssc.201300292
bibtex: '@article{Kemper_Mietze_Hiller_Stauden_Pezoldt_Meertens_Luysberg_As_Lindner_2014,
title={Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)},
volume={11}, DOI={10.1002/pssc.201300292},
number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper,
R. M. and Mietze, C. and Hiller, L. and Stauden, T. and Pezoldt, J. and Meertens,
D. and Luysberg, M. and As, D. J. and Lindner, Jörg}, year={2014}, pages={265–268}
}'
chicago: 'Kemper, R. M., C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens,
M. Luysberg, D. J. As, and Jörg Lindner. “Cubic GaN/AlN Multi-Quantum Wells Grown
on Pre-Patterned 3C-SiC/Si (001).” Physica Status Solidi (C) 11, no. 2
(2014): 265–68. https://doi.org/10.1002/pssc.201300292.'
ieee: R. M. Kemper et al., “Cubic GaN/AlN multi-quantum wells grown on pre-patterned
3C-SiC/Si (001),” physica status solidi (c), vol. 11, no. 2, pp. 265–268,
2014.
mla: Kemper, R. M., et al. “Cubic GaN/AlN Multi-Quantum Wells Grown on Pre-Patterned
3C-SiC/Si (001).” Physica Status Solidi (C), vol. 11, no. 2, Wiley, 2014,
pp. 265–68, doi:10.1002/pssc.201300292.
short: R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M.
Luysberg, D.J. As, J. Lindner, Physica Status Solidi (C) 11 (2014) 265–268.
date_created: 2018-08-22T12:28:15Z
date_updated: 2022-01-06T07:00:13Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
doi: 10.1002/pssc.201300292
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-22T12:30:12Z
date_updated: 2018-08-22T12:30:12Z
file_id: '4071'
file_name: Cubic GaN-AlN multi-quantum wells grown on pre-patterned 3C SiC Si 001.pdf
file_size: 3777577
relation: main_file
success: 1
file_date_updated: 2018-08-22T12:30:12Z
has_accepted_license: '1'
intvolume: ' 11'
issue: '2'
language:
- iso: eng
page: 265-268
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)
type: journal_article
user_id: '55706'
volume: 11
year: '2014'
...
---
_id: '7261'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot
spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. Physica
Status Solidi (C), 10(9), 1214–1217. https://doi.org/10.1002/pssc.201200689
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10},
DOI={10.1002/pssc.201200689},
number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner,
Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg,
Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D.
and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }'
chicago: 'Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin
LEDs.” Physica Status Solidi (C) 10, no. 9 (2013): 1214–17. https://doi.org/10.1002/pssc.201200689.'
ieee: H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,”
physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
mla: Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.”
Physica Status Solidi (C), vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:10.1002/pssc.201200689.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi
(C) 10 (2013) 1214–1217.
date_created: 2019-01-30T12:58:14Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201200689
intvolume: ' 10'
issue: '9'
language:
- iso: eng
page: 1214-1217
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Spin relaxation length in quantum dot spin LEDs
type: journal_article
user_id: '42514'
volume: 10
year: '2013'
...
---
_id: '7281'
author:
- first_name: Henning
full_name: Höpfner, Henning
last_name: Höpfner
- first_name: Carola
full_name: Fritsche, Carola
last_name: Fritsche
- first_name: Arne
full_name: Ludwig, Arne
last_name: Ludwig
- first_name: Astrid
full_name: Ludwig, Astrid
last_name: Ludwig
- first_name: Frank
full_name: Stromberg, Frank
last_name: Stromberg
- first_name: Heiko
full_name: Wende, Heiko
last_name: Wende
- first_name: Werner
full_name: Keune, Werner
last_name: Keune
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Nils C.
full_name: Gerhardt, Nils C.
last_name: Gerhardt
- first_name: Martin R.
full_name: Hofmann, Martin R.
last_name: Hofmann
citation:
ama: Höpfner H, Fritsche C, Ludwig A, et al. Spin relaxation length in quantum dot
spin LEDs. physica status solidi (c). 2013;10(9):1214-1217. doi:10.1002/pssc.201200689
apa: Höpfner, H., Fritsche, C., Ludwig, A., Ludwig, A., Stromberg, F., Wende, H.,
… Hofmann, M. R. (2013). Spin relaxation length in quantum dot spin LEDs. Physica
Status Solidi (C), 10(9), 1214–1217. https://doi.org/10.1002/pssc.201200689
bibtex: '@article{Höpfner_Fritsche_Ludwig_Ludwig_Stromberg_Wende_Keune_Reuter_Wieck_Gerhardt_et
al._2013, title={Spin relaxation length in quantum dot spin LEDs}, volume={10},
DOI={10.1002/pssc.201200689},
number={9}, journal={physica status solidi (c)}, publisher={Wiley}, author={Höpfner,
Henning and Fritsche, Carola and Ludwig, Arne and Ludwig, Astrid and Stromberg,
Frank and Wende, Heiko and Keune, Werner and Reuter, Dirk and Wieck, Andreas D.
and Gerhardt, Nils C. and et al.}, year={2013}, pages={1214–1217} }'
chicago: 'Höpfner, Henning, Carola Fritsche, Arne Ludwig, Astrid Ludwig, Frank Stromberg,
Heiko Wende, Werner Keune, et al. “Spin Relaxation Length in Quantum Dot Spin
LEDs.” Physica Status Solidi (C) 10, no. 9 (2013): 1214–17. https://doi.org/10.1002/pssc.201200689.'
ieee: H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,”
physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
mla: Höpfner, Henning, et al. “Spin Relaxation Length in Quantum Dot Spin LEDs.”
Physica Status Solidi (C), vol. 10, no. 9, Wiley, 2013, pp. 1214–17, doi:10.1002/pssc.201200689.
short: H. Höpfner, C. Fritsche, A. Ludwig, A. Ludwig, F. Stromberg, H. Wende, W.
Keune, D. Reuter, A.D. Wieck, N.C. Gerhardt, M.R. Hofmann, Physica Status Solidi
(C) 10 (2013) 1214–1217.
date_created: 2019-01-31T07:54:12Z
date_updated: 2022-01-06T07:03:31Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201200689
intvolume: ' 10'
issue: '9'
language:
- iso: eng
page: 1214-1217
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Spin relaxation length in quantum dot spin LEDs
type: journal_article
user_id: '42514'
volume: 10
year: '2013'
...
---
_id: '4131'
abstract:
- lang: eng
text: "We report an anisotropic formation of defects in cubic GaN grown on nano-patterned
3C-SiC/Si (001) by molecular\r\nbeam epitaxy. Nano-patterning of 3C-SiC/Si (001)
is achieved by nanosphere lithography and a reactive\r\nion etching process. Atomic
force microscopy and scanning electron microscopy show that the selectivearea-\r\ngrown
cubic GaN nucleates in two structurally different domains, which most probably
originate from the\r\nsubstrate. In adjacent domains the formation of defects,
especially hexagonal inclusions, is different and leads to\r\ntwo different surface
morphologies. The dominant phase within these domains was measured by electron
backscatter\r\ndiffraction. Optical properties were investigated by micro-photoluminescence
and cathodoluminescence spectroscopy."
article_type: original
author:
- first_name: R. M.
full_name: Kemper, R. M.
last_name: Kemper
- first_name: M.
full_name: Häberlen, M.
last_name: Häberlen
- first_name: T.
full_name: Schupp, T.
last_name: Schupp
- first_name: M.
full_name: Weinl, M.
last_name: Weinl
- first_name: M.
full_name: Bürger, M.
last_name: Bürger
- first_name: M.
full_name: Ruth, M.
last_name: Ruth
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
- first_name: T.
full_name: Niendorf, T.
last_name: Niendorf
- first_name: H. J.
full_name: Maier, H. J.
last_name: Maier
- first_name: K.
full_name: Lischka, K.
last_name: Lischka
- first_name: D. J.
full_name: As, D. J.
last_name: As
- first_name: Jörg
full_name: Lindner, Jörg
last_name: Lindner
citation:
ama: Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown
on nano-patterned 3C-SiC (001). physica status solidi (c). 2012;9(3-4):1028-1031.
doi:10.1002/pssc.201100174
apa: Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., …
Lindner, J. (2012). Formation of defects in cubic GaN grown on nano-patterned
3C-SiC (001). Physica Status Solidi (C), 9(3–4), 1028–1031. https://doi.org/10.1002/pssc.201100174
bibtex: '@article{Kemper_Häberlen_Schupp_Weinl_Bürger_Ruth_Meier_Niendorf_Maier_Lischka_et
al._2012, title={Formation of defects in cubic GaN grown on nano-patterned 3C-SiC
(001)}, volume={9}, DOI={10.1002/pssc.201100174},
number={3–4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kemper,
R. M. and Häberlen, M. and Schupp, T. and Weinl, M. and Bürger, M. and Ruth, M.
and Meier, Cedrik and Niendorf, T. and Maier, H. J. and Lischka, K. and et al.},
year={2012}, pages={1028–1031} }'
chicago: 'Kemper, R. M., M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, Cedrik
Meier, et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned 3C-SiC
(001).” Physica Status Solidi (C) 9, no. 3–4 (2012): 1028–31. https://doi.org/10.1002/pssc.201100174.'
ieee: R. M. Kemper et al., “Formation of defects in cubic GaN grown on nano-patterned
3C-SiC (001),” physica status solidi (c), vol. 9, no. 3–4, pp. 1028–1031,
2012.
mla: Kemper, R. M., et al. “Formation of Defects in Cubic GaN Grown on Nano-Patterned
3C-SiC (001).” Physica Status Solidi (C), vol. 9, no. 3–4, Wiley, 2012,
pp. 1028–31, doi:10.1002/pssc.201100174.
short: R.M. Kemper, M. Häberlen, T. Schupp, M. Weinl, M. Bürger, M. Ruth, C. Meier,
T. Niendorf, H.J. Maier, K. Lischka, D.J. As, J. Lindner, Physica Status Solidi
(C) 9 (2012) 1028–1031.
date_created: 2018-08-27T11:31:07Z
date_updated: 2022-01-06T07:00:23Z
ddc:
- '530'
department:
- _id: '286'
- _id: '287'
- _id: '15'
- _id: '230'
- _id: '35'
doi: 10.1002/pssc.201100174
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T11:35:10Z
date_updated: 2018-08-27T11:35:10Z
file_id: '4132'
file_name: Formation of defects in cubic GaN grown on nano-patterned 3C-SiC 001.pdf
file_size: 848414
relation: main_file
success: 1
file_date_updated: 2018-08-27T11:35:10Z
has_accepted_license: '1'
intvolume: ' 9'
issue: 3-4
language:
- iso: eng
page: 1028-1031
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
type: journal_article
user_id: '20798'
volume: 9
year: '2012'
...
---
_id: '13560'
author:
- first_name: R.
full_name: Hölscher, R.
last_name: Hölscher
- first_name: S.
full_name: Sanna, S.
last_name: Sanna
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
citation:
ama: Hölscher R, Sanna S, Schmidt WG. Adsorption of OH and H at the LiNbO3(0001)
surface. physica status solidi (c). 2012;9(6):1361-1365. doi:10.1002/pssc.201100534
apa: Hölscher, R., Sanna, S., & Schmidt, W. G. (2012). Adsorption of OH and
H at the LiNbO3(0001) surface. Physica Status Solidi (c), 9(6),
1361–1365. https://doi.org/10.1002/pssc.201100534
bibtex: '@article{Hölscher_Sanna_Schmidt_2012, title={Adsorption of OH and H at
the LiNbO3(0001) surface}, volume={9}, DOI={10.1002/pssc.201100534},
number={6}, journal={physica status solidi (c)}, author={Hölscher, R. and Sanna,
S. and Schmidt, Wolf Gero}, year={2012}, pages={1361–1365} }'
chicago: 'Hölscher, R., S. Sanna, and Wolf Gero Schmidt. “Adsorption of OH and H
at the LiNbO3(0001) Surface.” Physica Status Solidi (c) 9, no. 6 (2012):
1361–65. https://doi.org/10.1002/pssc.201100534.'
ieee: 'R. Hölscher, S. Sanna, and W. G. Schmidt, “Adsorption of OH and H at the
LiNbO3(0001) surface,” physica status solidi (c), vol. 9, no. 6, pp. 1361–1365,
2012, doi: 10.1002/pssc.201100534.'
mla: Hölscher, R., et al. “Adsorption of OH and H at the LiNbO3(0001) Surface.”
Physica Status Solidi (c), vol. 9, no. 6, 2012, pp. 1361–65, doi:10.1002/pssc.201100534.
short: R. Hölscher, S. Sanna, W.G. Schmidt, Physica Status Solidi (c) 9 (2012) 1361–1365.
date_created: 2019-10-01T08:46:37Z
date_updated: 2025-12-05T10:44:11Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1002/pssc.201100534
intvolume: ' 9'
issue: '6'
language:
- iso: eng
page: 1361-1365
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
status: public
title: Adsorption of OH and H at the LiNbO3(0001) surface
type: journal_article
user_id: '16199'
volume: 9
year: '2012'
...
---
_id: '4136'
abstract:
- lang: eng
text: "Results of atomistic simulations aimed at understanding precipitation of
the highly attractive wide band gap\r\nsemiconductor material silicon carbide
in silicon are presented. The study involves a systematic investigation of\r\nintrinsic
and carbon-related defects as well as defect combinations and defect migration
by both, quantummechanical\r\nfirst-principles as well as empirical potential
methods. Comparing formation and activation energies,\r\nground-state structures
of defects and defect combinations as well as energetically favorable agglomeration
of\r\ndefects are predicted. Moreover, accurate ab initio calculations unveil
limitations of the analytical method based\r\non a Tersoff-like bond order potential.
A work-around is proposed in order to subsequently apply the highly efficient
technique on large structures not accessible by first-principles methods. The
outcome of both types of simulation provides a basic microscopic understanding
of defect formation and structural evolution particularly at non-equilibrium conditions
strongly deviated from the ground state as commonly found in SiC growth processes.
A possible precipitation mechanism, which conforms well to experimental findings
and clarifies contradictory views present in the literature is outlined."
article_type: original
author:
- first_name: F.
full_name: Zirkelbach, F.
last_name: Zirkelbach
- first_name: B.
full_name: Stritzker, B.
last_name: Stritzker
- first_name: K.
full_name: Nordlund, K.
last_name: Nordlund
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: E.
full_name: Rauls, E.
last_name: Rauls
- first_name: Jörg K. N.
full_name: Lindner, Jörg K. N.
id: '20797'
last_name: Lindner
citation:
ama: Zirkelbach F, Stritzker B, Nordlund K, Schmidt WG, Rauls E, Lindner JKN. First-principles
and empirical potential simulation study of intrinsic and carbon-related defects
in silicon. physica status solidi (c). 2012;9(10-11):1968-1973. doi:10.1002/pssc.201200198
apa: Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., &
Lindner, J. K. N. (2012). First-principles and empirical potential simulation
study of intrinsic and carbon-related defects in silicon. Physica Status Solidi
(c), 9(10–11), 1968–1973. https://doi.org/10.1002/pssc.201200198
bibtex: '@article{Zirkelbach_Stritzker_Nordlund_Schmidt_Rauls_Lindner_2012, title={First-principles
and empirical potential simulation study of intrinsic and carbon-related defects
in silicon}, volume={9}, DOI={10.1002/pssc.201200198},
number={10–11}, journal={physica status solidi (c)}, publisher={Wiley}, author={Zirkelbach,
F. and Stritzker, B. and Nordlund, K. and Schmidt, Wolf Gero and Rauls, E. and
Lindner, Jörg K. N.}, year={2012}, pages={1968–1973} }'
chicago: 'Zirkelbach, F., B. Stritzker, K. Nordlund, Wolf Gero Schmidt, E. Rauls,
and Jörg K. N. Lindner. “First-Principles and Empirical Potential Simulation Study
of Intrinsic and Carbon-Related Defects in Silicon.” Physica Status Solidi
(c) 9, no. 10–11 (2012): 1968–73. https://doi.org/10.1002/pssc.201200198.'
ieee: 'F. Zirkelbach, B. Stritzker, K. Nordlund, W. G. Schmidt, E. Rauls, and J.
K. N. Lindner, “First-principles and empirical potential simulation study of intrinsic
and carbon-related defects in silicon,” physica status solidi (c), vol.
9, no. 10–11, pp. 1968–1973, 2012, doi: 10.1002/pssc.201200198.'
mla: Zirkelbach, F., et al. “First-Principles and Empirical Potential Simulation
Study of Intrinsic and Carbon-Related Defects in Silicon.” Physica Status Solidi
(c), vol. 9, no. 10–11, Wiley, 2012, pp. 1968–73, doi:10.1002/pssc.201200198.
short: F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N.
Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.
date_created: 2018-08-27T12:19:26Z
date_updated: 2025-12-16T11:28:58Z
ddc:
- '530'
department:
- _id: '15'
- _id: '286'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
doi: 10.1002/pssc.201200198
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:19:56Z
date_updated: 2018-08-27T12:19:56Z
file_id: '4137'
file_name: First-principles and empirical potential simulation study of intrinsic
and carbon-related defects in silicon.pdf
file_size: 283206
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:19:56Z
has_accepted_license: '1'
intvolume: ' 9'
issue: 10-11
language:
- iso: eng
page: 1968-1973
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: First-principles and empirical potential simulation study of intrinsic and
carbon-related defects in silicon
type: journal_article
user_id: '16199'
volume: 9
year: '2012'
...
---
_id: '21047'
author:
- first_name: Benjamin
full_name: Brecht, Benjamin
id: '27150'
last_name: Brecht
orcid: '0000-0003-4140-0556 '
- first_name: Andreas
full_name: Eckstein, Andreas
last_name: Eckstein
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Brecht B, Eckstein A, Silberhorn C. Controlling the correlations in frequency
upconversion in PPLN and PPKTP waveguides. physica status solidi (c). 2011;8(4):1235-1238.
doi:10.1002/pssc.201000872
apa: Brecht, B., Eckstein, A., & Silberhorn, C. (2011). Controlling the correlations
in frequency upconversion in PPLN and PPKTP waveguides. Physica Status Solidi
(C), 8(4), 1235–1238. https://doi.org/10.1002/pssc.201000872
bibtex: '@article{Brecht_Eckstein_Silberhorn_2011, title={Controlling the correlations
in frequency upconversion in PPLN and PPKTP waveguides}, volume={8}, DOI={10.1002/pssc.201000872},
number={4}, journal={physica status solidi (c)}, author={Brecht, Benjamin and
Eckstein, Andreas and Silberhorn, Christine}, year={2011}, pages={1235–1238} }'
chicago: 'Brecht, Benjamin, Andreas Eckstein, and Christine Silberhorn. “Controlling
the Correlations in Frequency Upconversion in PPLN and PPKTP Waveguides.” Physica
Status Solidi (C) 8, no. 4 (2011): 1235–38. https://doi.org/10.1002/pssc.201000872.'
ieee: B. Brecht, A. Eckstein, and C. Silberhorn, “Controlling the correlations in
frequency upconversion in PPLN and PPKTP waveguides,” physica status solidi
(c), vol. 8, no. 4, pp. 1235–1238, 2011.
mla: Brecht, Benjamin, et al. “Controlling the Correlations in Frequency Upconversion
in PPLN and PPKTP Waveguides.” Physica Status Solidi (C), vol. 8, no. 4,
2011, pp. 1235–38, doi:10.1002/pssc.201000872.
short: B. Brecht, A. Eckstein, C. Silberhorn, Physica Status Solidi (C) 8 (2011)
1235–1238.
date_created: 2021-01-20T08:57:39Z
date_updated: 2022-01-06T06:54:42Z
department:
- _id: '15'
doi: 10.1002/pssc.201000872
intvolume: ' 8'
issue: '4'
language:
- iso: eng
page: 1235-1238
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
status: public
title: Controlling the correlations in frequency upconversion in PPLN and PPKTP waveguides
type: journal_article
user_id: '27150'
volume: 8
year: '2011'
...
---
_id: '7714'
author:
- first_name: H.
full_name: Kurtze, H.
last_name: Kurtze
- first_name: D. R.
full_name: Yakovlev, D. R.
last_name: Yakovlev
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: A. D.
full_name: Wieck, A. D.
last_name: Wieck
- first_name: M.
full_name: Bayer, M.
last_name: Bayer
citation:
ama: Kurtze H, Yakovlev DR, Reuter D, Wieck AD, Bayer M. Phonon-assisted exciton
spin relaxation in (In,Ga)As/GaAs quantum dots. physica status solidi (c).
2011;8(4):1165-1168. doi:10.1002/pssc.201000791
apa: Kurtze, H., Yakovlev, D. R., Reuter, D., Wieck, A. D., & Bayer, M. (2011).
Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots. Physica
Status Solidi (C), 8(4), 1165–1168. https://doi.org/10.1002/pssc.201000791
bibtex: '@article{Kurtze_Yakovlev_Reuter_Wieck_Bayer_2011, title={Phonon-assisted
exciton spin relaxation in (In,Ga)As/GaAs quantum dots}, volume={8}, DOI={10.1002/pssc.201000791},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Kurtze,
H. and Yakovlev, D. R. and Reuter, Dirk and Wieck, A. D. and Bayer, M.}, year={2011},
pages={1165–1168} }'
chicago: 'Kurtze, H., D. R. Yakovlev, Dirk Reuter, A. D. Wieck, and M. Bayer. “Phonon-Assisted
Exciton Spin Relaxation in (In,Ga)As/GaAs Quantum Dots.” Physica Status Solidi
(C) 8, no. 4 (2011): 1165–68. https://doi.org/10.1002/pssc.201000791.'
ieee: H. Kurtze, D. R. Yakovlev, D. Reuter, A. D. Wieck, and M. Bayer, “Phonon-assisted
exciton spin relaxation in (In,Ga)As/GaAs quantum dots,” physica status solidi
(c), vol. 8, no. 4, pp. 1165–1168, 2011.
mla: Kurtze, H., et al. “Phonon-Assisted Exciton Spin Relaxation in (In,Ga)As/GaAs
Quantum Dots.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp.
1165–68, doi:10.1002/pssc.201000791.
short: H. Kurtze, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer, Physica Status
Solidi (C) 8 (2011) 1165–1168.
date_created: 2019-02-14T10:36:19Z
date_updated: 2022-01-06T07:03:45Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201000791
intvolume: ' 8'
issue: '4'
language:
- iso: eng
page: 1165-1168
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots
type: journal_article
user_id: '42514'
volume: 8
year: '2011'
...
---
_id: '7335'
author:
- first_name: Hubert J.
full_name: Krenner, Hubert J.
last_name: Krenner
- first_name: Stefan
full_name: Völk, Stefan
last_name: Völk
- first_name: Florian J. R.
full_name: Schülein, Florian J. R.
last_name: Schülein
- first_name: Florian
full_name: Knall, Florian
last_name: Knall
- first_name: Achim
full_name: Wixforth, Achim
last_name: Wixforth
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Hyochul
full_name: Kim, Hyochul
last_name: Kim
- first_name: Tuan A.
full_name: Truong, Tuan A.
last_name: Truong
- first_name: Pierre M.
full_name: Petroff, Pierre M.
last_name: Petroff
citation:
ama: Krenner HJ, Völk S, Schülein FJR, et al. Surface acoustic wave controlled carrier
injection into self-assembled quantum dots and quantum posts. physica status
solidi (c). 2011;9(2):407-410. doi:10.1002/pssc.201100236
apa: Krenner, H. J., Völk, S., Schülein, F. J. R., Knall, F., Wixforth, A., Reuter,
D., … Petroff, P. M. (2011). Surface acoustic wave controlled carrier injection
into self-assembled quantum dots and quantum posts. Physica Status Solidi (C),
9(2), 407–410. https://doi.org/10.1002/pssc.201100236
bibtex: '@article{Krenner_Völk_Schülein_Knall_Wixforth_Reuter_Wieck_Kim_Truong_Petroff_2011,
title={Surface acoustic wave controlled carrier injection into self-assembled
quantum dots and quantum posts}, volume={9}, DOI={10.1002/pssc.201100236},
number={2}, journal={physica status solidi (c)}, publisher={Wiley}, author={Krenner,
Hubert J. and Völk, Stefan and Schülein, Florian J. R. and Knall, Florian and
Wixforth, Achim and Reuter, Dirk and Wieck, Andreas D. and Kim, Hyochul and Truong,
Tuan A. and Petroff, Pierre M.}, year={2011}, pages={407–410} }'
chicago: 'Krenner, Hubert J., Stefan Völk, Florian J. R. Schülein, Florian Knall,
Achim Wixforth, Dirk Reuter, Andreas D. Wieck, Hyochul Kim, Tuan A. Truong, and
Pierre M. Petroff. “Surface Acoustic Wave Controlled Carrier Injection into Self-Assembled
Quantum Dots and Quantum Posts.” Physica Status Solidi (C) 9, no. 2 (2011):
407–10. https://doi.org/10.1002/pssc.201100236.'
ieee: H. J. Krenner et al., “Surface acoustic wave controlled carrier injection
into self-assembled quantum dots and quantum posts,” physica status solidi
(c), vol. 9, no. 2, pp. 407–410, 2011.
mla: Krenner, Hubert J., et al. “Surface Acoustic Wave Controlled Carrier Injection
into Self-Assembled Quantum Dots and Quantum Posts.” Physica Status Solidi
(C), vol. 9, no. 2, Wiley, 2011, pp. 407–10, doi:10.1002/pssc.201100236.
short: H.J. Krenner, S. Völk, F.J.R. Schülein, F. Knall, A. Wixforth, D. Reuter,
A.D. Wieck, H. Kim, T.A. Truong, P.M. Petroff, Physica Status Solidi (C) 9 (2011)
407–410.
date_created: 2019-01-31T11:18:49Z
date_updated: 2022-01-06T07:03:35Z
department:
- _id: '15'
- _id: '230'
doi: 10.1002/pssc.201100236
intvolume: ' 9'
issue: '2'
language:
- iso: eng
page: 407-410
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Surface acoustic wave controlled carrier injection into self-assembled quantum
dots and quantum posts
type: journal_article
user_id: '42514'
volume: 9
year: '2011'
...
---
_id: '4142'
abstract:
- lang: eng
text: This paper reports the successful reduction of tensile strain in a thin ion-beam-synthesized
3C-SiC(111) layer on silicon. Significant relaxation is achieved by creating a
near-interface defect structure containing nanometric voids and dislocation loops
by the implantation of He ions and subsequent thermal annealing. The structural
features of this defect microstructure are investigated by transmission electron
microscopy. High-resolution X-ray diffraction in a parallel beam configuration
is used to quantify the strain state of the top SiC layer. Further annealing experiments
were carried out in order to emulate typical process conditions for the growth
of wide-bandgap semiconductors like, for example GaN. It is found that prolonged
annealing at elevated temperatures leads to coarsening of the voids and to a much
less efficient strain reduction. We show that this issue can be resolved by the
co-implantation of oxygen to form highly thermally stable cavity/extended defect
structures. The technique presented here may be useful for a variety of other
thermally mismatched bulk/thin film couples as well.
article_type: original
author:
- first_name: Maik
full_name: Häberlen, Maik
last_name: Häberlen
- first_name: Brian
full_name: Murphy, Brian
last_name: Murphy
- first_name: Bernd
full_name: Stritzker, Bernd
last_name: Stritzker
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
citation:
ama: Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111)
thin film on silicon by He+ and O+ ion implantation. physica status solidi
(c). 2011;8(3):944-947. doi:10.1002/pssc.201000342
apa: Häberlen, M., Murphy, B., Stritzker, B., & Lindner, J. (2011). Decoupling
of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation.
Physica Status Solidi (C), 8(3), 944–947. https://doi.org/10.1002/pssc.201000342
bibtex: '@article{Häberlen_Murphy_Stritzker_Lindner_2011, title={Decoupling of a
strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation}, volume={8},
DOI={10.1002/pssc.201000342},
number={3}, journal={physica status solidi (c)}, publisher={Wiley}, author={Häberlen,
Maik and Murphy, Brian and Stritzker, Bernd and Lindner, Jörg}, year={2011}, pages={944–947}
}'
chicago: 'Häberlen, Maik, Brian Murphy, Bernd Stritzker, and Jörg Lindner. “Decoupling
of a Strained 3C-SiC(111) Thin Film on Silicon by He+ and O+ Ion Implantation.”
Physica Status Solidi (C) 8, no. 3 (2011): 944–47. https://doi.org/10.1002/pssc.201000342.'
ieee: M. Häberlen, B. Murphy, B. Stritzker, and J. Lindner, “Decoupling of a strained
3C-SiC(111) thin film on silicon by He+ and O+ ion implantation,” physica status
solidi (c), vol. 8, no. 3, pp. 944–947, 2011.
mla: Häberlen, Maik, et al. “Decoupling of a Strained 3C-SiC(111) Thin Film on Silicon
by He+ and O+ Ion Implantation.” Physica Status Solidi (C), vol. 8, no.
3, Wiley, 2011, pp. 944–47, doi:10.1002/pssc.201000342.
short: M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C)
8 (2011) 944–947.
date_created: 2018-08-27T12:31:20Z
date_updated: 2022-01-06T07:00:24Z
ddc:
- '530'
department:
- _id: '286'
doi: 10.1002/pssc.201000342
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T12:32:07Z
date_updated: 2018-08-27T12:32:07Z
file_id: '4143'
file_name: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and
O+ ion implantation.pdf
file_size: 152623
relation: main_file
success: 1
file_date_updated: 2018-08-27T12:32:07Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '3'
language:
- iso: eng
page: 944-947
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion
implantation
type: journal_article
user_id: '55706'
volume: 8
year: '2011'
...
---
_id: '4378'
abstract:
- lang: eng
text: Using a combined all-ultra-high-vacuum process employing lateral patterning
with focused ion beams and molecular beam epitaxy, site-selective growth of single
(In,Ga)As quantum dots is achieved. We have embedded such a layer of intentionally
positioned quantum dots in the intrinsic region of a p-i-n junction so that the
quantum dots can be driven electrically. In this contribution, we will present
our results on the morphological properties of the ion-beam modified surface on
which the quantum dot nucleation occurs together with a characterization of the
electrical and optoelectronic properties. We will demonstrate that a single, individual
quantum dot can directly be electrically addressed.
article_type: original
author:
- first_name: Minisha
full_name: Mehta, Minisha
last_name: Mehta
- first_name: Dirk
full_name: Reuter, Dirk
id: '37763'
last_name: Reuter
- first_name: Andreas D.
full_name: Wieck, Andreas D.
last_name: Wieck
- first_name: Steffen
full_name: Michaelis de Vasconcellos, Steffen
last_name: Michaelis de Vasconcellos
- first_name: Artur
full_name: Zrenner, Artur
id: '606'
last_name: Zrenner
orcid: 0000-0002-5190-0944
- first_name: Cedrik
full_name: Meier, Cedrik
id: '20798'
last_name: Meier
orcid: https://orcid.org/0000-0002-3787-3572
citation:
ama: Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier
C. Electrically driven intentionally positioned single quantum dot. physica
status solidi (c). 2011;8(4):1182-1185. doi:10.1002/pssc.201000828
apa: Mehta, M., Reuter, D., Wieck, A. D., Michaelis de Vasconcellos, S., Zrenner,
A., & Meier, C. (2011). Electrically driven intentionally positioned single
quantum dot. Physica Status Solidi (C), 8(4), 1182–1185. https://doi.org/10.1002/pssc.201000828
bibtex: '@article{Mehta_Reuter_Wieck_Michaelis de Vasconcellos_Zrenner_Meier_2011,
title={Electrically driven intentionally positioned single quantum dot}, volume={8},
DOI={10.1002/pssc.201000828},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Mehta,
Minisha and Reuter, Dirk and Wieck, Andreas D. and Michaelis de Vasconcellos,
Steffen and Zrenner, Artur and Meier, Cedrik}, year={2011}, pages={1182–1185}
}'
chicago: 'Mehta, Minisha, Dirk Reuter, Andreas D. Wieck, Steffen Michaelis de Vasconcellos,
Artur Zrenner, and Cedrik Meier. “Electrically Driven Intentionally Positioned
Single Quantum Dot.” Physica Status Solidi (C) 8, no. 4 (2011): 1182–85.
https://doi.org/10.1002/pssc.201000828.'
ieee: M. Mehta, D. Reuter, A. D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
and C. Meier, “Electrically driven intentionally positioned single quantum dot,”
physica status solidi (c), vol. 8, no. 4, pp. 1182–1185, 2011.
mla: Mehta, Minisha, et al. “Electrically Driven Intentionally Positioned Single
Quantum Dot.” Physica Status Solidi (C), vol. 8, no. 4, Wiley, 2011, pp.
1182–85, doi:10.1002/pssc.201000828.
short: M. Mehta, D. Reuter, A.D. Wieck, S. Michaelis de Vasconcellos, A. Zrenner,
C. Meier, Physica Status Solidi (C) 8 (2011) 1182–1185.
date_created: 2018-09-11T14:15:28Z
date_updated: 2022-01-06T07:01:00Z
department:
- _id: '15'
- _id: '230'
- _id: '35'
- _id: '287'
doi: 10.1002/pssc.201000828
intvolume: ' 8'
issue: '4'
keyword:
- molecular beam epitaxy
- quantum dot
- site control
- electroluminescence
language:
- iso: eng
page: 1182-1185
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Electrically driven intentionally positioned single quantum dot
type: journal_article
user_id: '20798'
volume: 8
year: '2011'
...
---
_id: '40186'
author:
- first_name: Andreas
full_name: Eckstein, Andreas
last_name: Eckstein
- first_name: Andreas
full_name: Christ, Andreas
last_name: Christ
- first_name: Peter J.
full_name: Mosley, Peter J.
last_name: Mosley
- first_name: Christine
full_name: Silberhorn, Christine
id: '26263'
last_name: Silberhorn
citation:
ama: Eckstein A, Christ A, Mosley PJ, Silberhorn C. Realistic g (2)
measurement of a PDC source with single photon detectors in the presence
of background. physica status solidi c. 2011;8(4):1216-1219. doi:10.1002/pssc.201000876
apa: Eckstein, A., Christ, A., Mosley, P. J., & Silberhorn, C. (2011). Realistic
g (2) measurement of a PDC source with single
photon detectors in the presence of background. Physica Status Solidi c,
8(4), 1216–1219. https://doi.org/10.1002/pssc.201000876
bibtex: '@article{Eckstein_Christ_Mosley_Silberhorn_2011, title={Realistic g
(2) measurement of a PDC source with single photon
detectors in the presence of background}, volume={8}, DOI={10.1002/pssc.201000876},
number={4}, journal={physica status solidi c}, publisher={Wiley}, author={Eckstein,
Andreas and Christ, Andreas and Mosley, Peter J. and Silberhorn, Christine}, year={2011},
pages={1216–1219} }'
chicago: 'Eckstein, Andreas, Andreas Christ, Peter J. Mosley, and Christine Silberhorn.
“Realistic g (2) Measurement of a PDC Source
with Single Photon Detectors in the Presence of Background.” Physica Status
Solidi c 8, no. 4 (2011): 1216–19. https://doi.org/10.1002/pssc.201000876.'
ieee: 'A. Eckstein, A. Christ, P. J. Mosley, and C. Silberhorn, “Realistic g
(2) measurement of a PDC source with single photon
detectors in the presence of background,” physica status solidi c, vol.
8, no. 4, pp. 1216–1219, 2011, doi: 10.1002/pssc.201000876.'
mla: Eckstein, Andreas, et al. “Realistic g (2)
Measurement of a PDC Source with Single Photon Detectors in the Presence of Background.”
Physica Status Solidi c, vol. 8, no. 4, Wiley, 2011, pp. 1216–19, doi:10.1002/pssc.201000876.
short: A. Eckstein, A. Christ, P.J. Mosley, C. Silberhorn, Physica Status Solidi
c 8 (2011) 1216–1219.
date_created: 2023-01-26T08:21:59Z
date_updated: 2023-01-30T12:50:41Z
department:
- _id: '288'
- _id: '15'
doi: 10.1002/pssc.201000876
intvolume: ' 8'
issue: '4'
keyword:
- Condensed Matter Physics
language:
- iso: eng
page: 1216-1219
publication: physica status solidi c
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
publisher: Wiley
status: public
title: Realistic g (2) measurement of a PDC source
with single photon detectors in the presence of background
type: journal_article
user_id: '26263'
volume: 8
year: '2011'
...
---
_id: '4089'
abstract:
- lang: eng
text: We study the influence of the phonon environment on the electron dynamics
in a doped quantum dot molecule. A non-perturbative quantumkinetic theory based
on correlation expansion is used in order to describe both diagonal and off-diagonal
electron-phonon couplings representing real and virtual processes with relevant
acoustic phonons. We show that the relaxation is dominated by phononassisted electron
tunneling between constituent quantum dots and occurs on a picosecond time scale.
The dependence of the time evolution of the quantum dot occupation probabilities
on the energy mismatch between the quantum dots is studied in detail.
article_type: original
author:
- first_name: Anna
full_name: Grodecka-Grad, Anna
last_name: Grodecka-Grad
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Grodecka-Grad A, Förstner J. Phonon-assisted decoherence and tunneling in quantum
dot molecules. physica status solidi (c). 2011;8(4):1125-1128. doi:10.1002/pssc.201000824
apa: Grodecka-Grad, A., & Förstner, J. (2011). Phonon-assisted decoherence and
tunneling in quantum dot molecules. Physica Status Solidi (c), 8(4),
1125–1128. https://doi.org/10.1002/pssc.201000824
bibtex: '@article{Grodecka-Grad_Förstner_2011, title={Phonon-assisted decoherence
and tunneling in quantum dot molecules}, volume={8}, DOI={10.1002/pssc.201000824},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Grodecka-Grad,
Anna and Förstner, Jens}, year={2011}, pages={1125–1128} }'
chicago: 'Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Assisted Decoherence and
Tunneling in Quantum Dot Molecules.” Physica Status Solidi (c) 8, no. 4
(2011): 1125–28. https://doi.org/10.1002/pssc.201000824.'
ieee: 'A. Grodecka-Grad and J. Förstner, “Phonon-assisted decoherence and tunneling
in quantum dot molecules,” physica status solidi (c), vol. 8, no. 4, pp.
1125–1128, 2011, doi: 10.1002/pssc.201000824.'
mla: Grodecka-Grad, Anna, and Jens Förstner. “Phonon-Assisted Decoherence and Tunneling
in Quantum Dot Molecules.” Physica Status Solidi (c), vol. 8, no. 4, Wiley,
2011, pp. 1125–28, doi:10.1002/pssc.201000824.
short: A. Grodecka-Grad, J. Förstner, Physica Status Solidi (c) 8 (2011) 1125–1128.
date_created: 2018-08-23T09:43:57Z
date_updated: 2025-12-16T08:12:02Z
ddc:
- '530'
department:
- _id: '170'
- _id: '35'
- _id: '15'
- _id: '61'
- _id: '638'
- _id: '894'
- _id: '3'
- _id: '230'
doi: 10.1002/pssc.201000824
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-23T09:45:30Z
date_updated: 2018-08-23T09:45:30Z
file_id: '4090'
file_name: 2011 Grodecka-Grad,Förstner_ Phonon-assisted decoherence and tunneling
in quantum dot molecules.pdf
file_size: 202905
relation: main_file
success: 1
file_date_updated: 2018-08-23T09:45:30Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '4'
keyword:
- tet_topic_qd
language:
- iso: eng
page: 1125-1128
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Phonon-assisted decoherence and tunneling in quantum dot molecules
type: journal_article
user_id: '16199'
volume: 8
year: '2011'
...
---
_id: '4049'
abstract:
- lang: eng
text: "The injection of photocurrents by femtosecond laser pulses in (110)-orientedGaAs/AlGaAs
quantum wells is\r\ninvestigated theoretically and experimentally. The roomtemperature
measurements show an oscillatory dependence\r\nof the injection current amplitude
and direction on the excitation photon energy. Microscopic calculations using
the semiconductor Bloch equations that are set up on the basis of k.p band structure
calculations provide a detailed understanding of the experimental findings."
article_type: original
author:
- first_name: Huynh
full_name: Thanh Duc, Huynh
last_name: Thanh Duc
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Shekhar
full_name: Priyadarshi, Shekhar
last_name: Priyadarshi
- first_name: Ana Maria
full_name: Racu, Ana Maria
last_name: Racu
- first_name: Klaus
full_name: Pierz, Klaus
last_name: Pierz
- first_name: Uwe
full_name: Siegner, Uwe
last_name: Siegner
- first_name: Mark
full_name: Bieler, Mark
last_name: Bieler
citation:
ama: Thanh Duc H, Förstner J, Meier T, et al. Oscillatory excitation energy dependence
of injection currents in GaAs/AlGaAs quantum wells. physica status solidi (c).
2011;8(4):1137-1140. doi:10.1002/pssc.201000831
apa: Thanh Duc, H., Förstner, J., Meier, T., Priyadarshi, S., Racu, A. M., Pierz,
K., Siegner, U., & Bieler, M. (2011). Oscillatory excitation energy dependence
of injection currents in GaAs/AlGaAs quantum wells. Physica Status Solidi (c),
8(4), 1137–1140. https://doi.org/10.1002/pssc.201000831
bibtex: '@article{Thanh Duc_Förstner_Meier_Priyadarshi_Racu_Pierz_Siegner_Bieler_2011,
title={Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs
quantum wells}, volume={8}, DOI={10.1002/pssc.201000831},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Thanh
Duc, Huynh and Förstner, Jens and Meier, Torsten and Priyadarshi, Shekhar and
Racu, Ana Maria and Pierz, Klaus and Siegner, Uwe and Bieler, Mark}, year={2011},
pages={1137–1140} }'
chicago: 'Thanh Duc, Huynh, Jens Förstner, Torsten Meier, Shekhar Priyadarshi, Ana
Maria Racu, Klaus Pierz, Uwe Siegner, and Mark Bieler. “Oscillatory Excitation
Energy Dependence of Injection Currents in GaAs/AlGaAs Quantum Wells.” Physica
Status Solidi (c) 8, no. 4 (2011): 1137–40. https://doi.org/10.1002/pssc.201000831.'
ieee: 'H. Thanh Duc et al., “Oscillatory excitation energy dependence of
injection currents in GaAs/AlGaAs quantum wells,” physica status solidi (c),
vol. 8, no. 4, pp. 1137–1140, 2011, doi: 10.1002/pssc.201000831.'
mla: Thanh Duc, Huynh, et al. “Oscillatory Excitation Energy Dependence of Injection
Currents in GaAs/AlGaAs Quantum Wells.” Physica Status Solidi (c), vol.
8, no. 4, Wiley, 2011, pp. 1137–40, doi:10.1002/pssc.201000831.
short: H. Thanh Duc, J. Förstner, T. Meier, S. Priyadarshi, A.M. Racu, K. Pierz,
U. Siegner, M. Bieler, Physica Status Solidi (c) 8 (2011) 1137–1140.
date_created: 2018-08-22T10:38:59Z
date_updated: 2025-12-16T11:21:35Z
ddc:
- '530'
department:
- _id: '15'
- _id: '293'
- _id: '230'
- _id: '170'
- _id: '35'
- _id: '34'
- _id: '61'
doi: 10.1002/pssc.201000831
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-22T10:41:43Z
date_updated: 2018-08-22T10:41:43Z
file_id: '4050'
file_name: 2011 Duc et al_Oscillatory excitation energy dependence of injection
currents in GaAs-AIGaAs quantum wells.pdf
file_size: 324789
relation: main_file
success: 1
file_date_updated: 2018-08-22T10:41:43Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '4'
keyword:
- tet_topic_qw
language:
- iso: eng
page: 1137-1140
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Oscillatory excitation energy dependence of injection currents in GaAs/AlGaAs
quantum wells
type: journal_article
user_id: '16199'
volume: 8
year: '2011'
...
---
_id: '4118'
abstract:
- lang: eng
text: "We numerically investigate the coupling between circular resonators and study
strong light‐matter coupling of single as well as multiple circular resonators
to quantum‐mechanical resonators in two dimensional model simulations. For all
cases, the computed resonances of the coupled system as function of the detuning
show anti‐crossings.\r\n\r\nThe obtained mode splittings of coupled optical resonators
are strongly depending on distance and cluster in almost degenerate eigenstates
for large distances, as is known from coupled resonator optical waveguides. Vacuum
Rabi splitting is observed for a quantum dot strongly coupled to eigenmodes of
single perfectly cylindrical resonators. "
article_type: original
author:
- first_name: S.
full_name: Declair, S.
last_name: Declair
- first_name: Torsten
full_name: Meier, Torsten
id: '344'
last_name: Meier
orcid: 0000-0001-8864-2072
- first_name: Jens
full_name: Förstner, Jens
id: '158'
last_name: Förstner
orcid: 0000-0001-7059-9862
citation:
ama: Declair S, Meier T, Förstner J. Numerical investigation of the coupling between
microdisk modes and quantum dots. physica status solidi (c). 2011;8(4):1254-1257.
doi:10.1002/pssc.201000869
apa: Declair, S., Meier, T., & Förstner, J. (2011). Numerical investigation
of the coupling between microdisk modes and quantum dots. Physica Status Solidi
(c), 8(4), 1254–1257. https://doi.org/10.1002/pssc.201000869
bibtex: '@article{Declair_Meier_Förstner_2011, title={Numerical investigation of
the coupling between microdisk modes and quantum dots}, volume={8}, DOI={10.1002/pssc.201000869},
number={4}, journal={physica status solidi (c)}, publisher={Wiley}, author={Declair,
S. and Meier, Torsten and Förstner, Jens}, year={2011}, pages={1254–1257} }'
chicago: 'Declair, S., Torsten Meier, and Jens Förstner. “Numerical Investigation
of the Coupling between Microdisk Modes and Quantum Dots.” Physica Status Solidi
(c) 8, no. 4 (2011): 1254–57. https://doi.org/10.1002/pssc.201000869.'
ieee: 'S. Declair, T. Meier, and J. Förstner, “Numerical investigation of the coupling
between microdisk modes and quantum dots,” physica status solidi (c), vol.
8, no. 4, pp. 1254–1257, 2011, doi: 10.1002/pssc.201000869.'
mla: Declair, S., et al. “Numerical Investigation of the Coupling between Microdisk
Modes and Quantum Dots.” Physica Status Solidi (c), vol. 8, no. 4, Wiley,
2011, pp. 1254–57, doi:10.1002/pssc.201000869.
short: S. Declair, T. Meier, J. Förstner, Physica Status Solidi (c) 8 (2011) 1254–1257.
date_created: 2018-08-27T09:06:46Z
date_updated: 2025-12-16T11:22:02Z
ddc:
- '530'
department:
- _id: '15'
- _id: '230'
- _id: '293'
- _id: '170'
- _id: '35'
- _id: '34'
- _id: '61'
doi: 10.1002/pssc.201000869
file:
- access_level: closed
content_type: application/pdf
creator: hclaudia
date_created: 2018-08-27T09:07:57Z
date_updated: 2018-08-27T09:07:57Z
file_id: '4119'
file_name: 2011 Delcair,Meier,Förstner_Numerical investigation of the coupling between
microdisk modes and quantum dots.pdf
file_size: 281469
relation: main_file
success: 1
file_date_updated: 2018-08-27T09:07:57Z
has_accepted_license: '1'
intvolume: ' 8'
issue: '4'
keyword:
- tet_topic_phc
- tet_topic_microdisk
language:
- iso: eng
page: 1254-1257
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
publication_status: published
publisher: Wiley
status: public
title: Numerical investigation of the coupling between microdisk modes and quantum
dots
type: journal_article
user_id: '16199'
volume: 8
year: '2011'
...
---
_id: '13581'
author:
- first_name: S.
full_name: Wippermann, S.
last_name: Wippermann
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: F.
full_name: Bechstedt, F.
last_name: Bechstedt
- first_name: S.
full_name: Chandola, S.
last_name: Chandola
- first_name: K.
full_name: Hinrichs, K.
last_name: Hinrichs
- first_name: M.
full_name: Gensch, M.
last_name: Gensch
- first_name: N.
full_name: Esser, N.
last_name: Esser
- first_name: K.
full_name: Fleischer, K.
last_name: Fleischer
- first_name: J. F.
full_name: McGilp, J. F.
last_name: McGilp
citation:
ama: Wippermann S, Schmidt WG, Bechstedt F, et al. Optical anisotropy of Si(111)-(4
× 1)/(8 × 2)-In nanowires calculated fromfirst-principles. physica status solidi
(c). 2010;7(2):133-136. doi:10.1002/pssc.200982413
apa: Wippermann, S., Schmidt, W. G., Bechstedt, F., Chandola, S., Hinrichs, K.,
Gensch, M., Esser, N., Fleischer, K., & McGilp, J. F. (2010). Optical anisotropy
of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles. Physica
Status Solidi (c), 7(2), 133–136. https://doi.org/10.1002/pssc.200982413
bibtex: '@article{Wippermann_Schmidt_Bechstedt_Chandola_Hinrichs_Gensch_Esser_Fleischer_McGilp_2010,
title={Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles},
volume={7}, DOI={10.1002/pssc.200982413},
number={2}, journal={physica status solidi (c)}, author={Wippermann, S. and Schmidt,
Wolf Gero and Bechstedt, F. and Chandola, S. and Hinrichs, K. and Gensch, M. and
Esser, N. and Fleischer, K. and McGilp, J. F.}, year={2010}, pages={133–136} }'
chicago: 'Wippermann, S., Wolf Gero Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs,
M. Gensch, N. Esser, K. Fleischer, and J. F. McGilp. “Optical Anisotropy of Si(111)-(4
× 1)/(8 × 2)-In Nanowires Calculated Fromfirst-Principles.” Physica Status
Solidi (c) 7, no. 2 (2010): 133–36. https://doi.org/10.1002/pssc.200982413.'
ieee: 'S. Wippermann et al., “Optical anisotropy of Si(111)-(4 × 1)/(8 ×
2)-In nanowires calculated fromfirst-principles,” physica status solidi (c),
vol. 7, no. 2, pp. 133–136, 2010, doi: 10.1002/pssc.200982413.'
mla: Wippermann, S., et al. “Optical Anisotropy of Si(111)-(4 × 1)/(8 × 2)-In Nanowires
Calculated Fromfirst-Principles.” Physica Status Solidi (c), vol. 7, no.
2, 2010, pp. 133–36, doi:10.1002/pssc.200982413.
short: S. Wippermann, W.G. Schmidt, F. Bechstedt, S. Chandola, K. Hinrichs, M. Gensch,
N. Esser, K. Fleischer, J.F. McGilp, Physica Status Solidi (c) 7 (2010) 133–136.
date_created: 2019-10-01T14:34:59Z
date_updated: 2025-12-05T12:45:21Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '35'
- _id: '230'
- _id: '27'
doi: 10.1002/pssc.200982413
intvolume: ' 7'
issue: '2'
language:
- iso: eng
page: 133-136
project:
- _id: '52'
name: Computing Resources Provided by the Paderborn Center for Parallel Computing
publication: physica status solidi (c)
publication_identifier:
issn:
- 1862-6351
- 1610-1642
publication_status: published
status: public
title: Optical anisotropy of Si(111)-(4 × 1)/(8 × 2)-In nanowires calculated fromfirst-principles
type: journal_article
user_id: '16199'
volume: 7
year: '2010'
...