@article{39533,
  abstract     = {{<jats:p>Due to the electrical, sensory and optical properties the interest on ZnO-based devices including thin-film transistors (TFT) aroused. The main concerns, when using ZnO nanoparticles (NP-ZnO) in TFT, are the low charge carrier mobility and the hysteresis when poly(4-vinylphenol) (PVP) is used as gate dielectric. It is well-known that the mobility in NP-ZnO films can be enhanced by the subsequent hydrothermal decomposition of zinc salts. The electrical behavior as a function of time and temperature is investigated, taking the NP-ZnO without addition of zinc acetate as reference. The addition of zinc acetate leads to a device with better performance, with increased drain current level and without the presence of the hysteresis in the transfer characteristic.  The formation reaction was performed at a temperature of 200°C, which enables process compatibility to some plastic substrates.</jats:p>}},
  author       = {{Vidor, Fábio Fedrizzi and Wirth, Gilson Inácio and Wolff, Karsten and Hilleringmann, Ulrich}},
  issn         = {{1938-5862}},
  journal      = {{ECS Transactions}},
  keywords     = {{General Medicine}},
  number       = {{1}},
  pages        = {{109--115}},
  publisher    = {{The Electrochemical Society}},
  title        = {{{Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors}}},
  doi          = {{10.1149/1.3615183}},
  volume       = {{39}},
  year         = {{2011}},
}