[{"citation":{"chicago":"Vidor, Fábio Fedrizzi, Gilson Inácio Wirth, Karsten Wolff, and Ulrich Hilleringmann. “Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors.” <i>ECS Transactions</i> 39, no. 1 (2011): 109–15. <a href=\"https://doi.org/10.1149/1.3615183\">https://doi.org/10.1149/1.3615183</a>.","ieee":"F. F. Vidor, G. I. Wirth, K. Wolff, and U. Hilleringmann, “Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors,” <i>ECS Transactions</i>, vol. 39, no. 1, pp. 109–115, 2011, doi: <a href=\"https://doi.org/10.1149/1.3615183\">10.1149/1.3615183</a>.","ama":"Vidor FF, Wirth GI, Wolff K, Hilleringmann U. Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors. <i>ECS Transactions</i>. 2011;39(1):109-115. doi:<a href=\"https://doi.org/10.1149/1.3615183\">10.1149/1.3615183</a>","apa":"Vidor, F. F., Wirth, G. I., Wolff, K., &#38; Hilleringmann, U. (2011). Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors. <i>ECS Transactions</i>, <i>39</i>(1), 109–115. <a href=\"https://doi.org/10.1149/1.3615183\">https://doi.org/10.1149/1.3615183</a>","short":"F.F. Vidor, G.I. Wirth, K. Wolff, U. Hilleringmann, ECS Transactions 39 (2011) 109–115.","bibtex":"@article{Vidor_Wirth_Wolff_Hilleringmann_2011, title={Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors}, volume={39}, DOI={<a href=\"https://doi.org/10.1149/1.3615183\">10.1149/1.3615183</a>}, number={1}, journal={ECS Transactions}, publisher={The Electrochemical Society}, author={Vidor, Fábio Fedrizzi and Wirth, Gilson Inácio and Wolff, Karsten and Hilleringmann, Ulrich}, year={2011}, pages={109–115} }","mla":"Vidor, Fábio Fedrizzi, et al. “Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors.” <i>ECS Transactions</i>, vol. 39, no. 1, The Electrochemical Society, 2011, pp. 109–15, doi:<a href=\"https://doi.org/10.1149/1.3615183\">10.1149/1.3615183</a>."},"page":"109-115","intvolume":"        39","year":"2011","issue":"1","publication_status":"published","publication_identifier":{"issn":["1938-5862","1938-6737"]},"doi":"10.1149/1.3615183","title":"Study on the Performance Enhancement of ZnO Nanoparticles Thin-Film Transistors","date_created":"2023-01-24T12:01:16Z","author":[{"full_name":"Vidor, Fábio Fedrizzi","last_name":"Vidor","first_name":"Fábio Fedrizzi"},{"first_name":"Gilson Inácio","last_name":"Wirth","full_name":"Wirth, Gilson Inácio"},{"first_name":"Karsten","last_name":"Wolff","full_name":"Wolff, Karsten"},{"full_name":"Hilleringmann, Ulrich","id":"20179","last_name":"Hilleringmann","first_name":"Ulrich"}],"volume":39,"publisher":"The Electrochemical Society","date_updated":"2023-03-21T10:21:23Z","status":"public","abstract":[{"text":"<jats:p>Due to the electrical, sensory and optical properties the interest on ZnO-based devices including thin-film transistors (TFT) aroused. The main concerns, when using ZnO nanoparticles (NP-ZnO) in TFT, are the low charge carrier mobility and the hysteresis when poly(4-vinylphenol) (PVP) is used as gate dielectric. It is well-known that the mobility in NP-ZnO films can be enhanced by the subsequent hydrothermal decomposition of zinc salts. The electrical behavior as a function of time and temperature is investigated, taking the NP-ZnO without addition of zinc acetate as reference. The addition of zinc acetate leads to a device with better performance, with increased drain current level and without the presence of the hysteresis in the transfer characteristic.  The formation reaction was performed at a temperature of 200°C, which enables process compatibility to some plastic substrates.</jats:p>","lang":"eng"}],"type":"journal_article","publication":"ECS Transactions","language":[{"iso":"eng"}],"keyword":["General Medicine"],"user_id":"20179","department":[{"_id":"59"}],"_id":"39533"}]