[{"language":[{"iso":"eng"}],"main_file_link":[{"url":"https://pubs.acs.org/doi/full/10.1021/acsami.5c05381","open_access":"1"}],"doi":"10.1021/acsami.5c05381","author":[{"full_name":"Hiege, Felix","first_name":"Felix","last_name":"Hiege"},{"first_name":"Chun-Wai","last_name":"Chang","full_name":"Chang, Chun-Wai"},{"last_name":"Trost","first_name":"Oliver","full_name":"Trost, Oliver"},{"last_name":"van Halteren","first_name":"Charlotte E. R.","full_name":"van Halteren, Charlotte E. R."},{"last_name":"Hosseini","first_name":"Pouya","full_name":"Hosseini, Pouya"},{"full_name":"Bendt, Georg","last_name":"Bendt","first_name":"Georg"},{"first_name":"Stephan","last_name":"Schulz","full_name":"Schulz, Stephan"},{"full_name":"Feng, Zhenxing","last_name":"Feng","first_name":"Zhenxing"},{"full_name":"Linnemann, Julia","orcid":"0000-0001-6883-5424","first_name":"Julia","last_name":"Linnemann","id":"116779"},{"full_name":"Tschulik, Kristina","last_name":"Tschulik","first_name":"Kristina"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"year":"2025","title":"Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities","intvolume":" 17","article_type":"original","date_updated":"2025-12-03T16:27:30Z","publication_status":"published","date_created":"2025-12-03T15:08:47Z","department":[{"_id":"985"}],"type":"journal_article","keyword":["Electrocatalysis","oxygen evolution reaction","nickel selenide","microelectrode"],"publication":"ACS Applied Materials & Interfaces","issue":"29","abstract":[{"text":"We investigated electrodeposited nanoparticulate nickel selenide (pre)catalysts that transform into nickel oxides/oxyhydroxides under oxygen evolution reaction conditions in alkaline solutions. Previous studies of this transformation were conducted at lower current densities than those of industrial relevance (≥1 A cm–2). We used ultramicroelectrodes (UMEs) to achieve such current densities, benefiting from their small size, ensuring low absolute currents and low ohmic drop but high current densities. Morphological degradation of the catalyst material was only observed at current densities exceeding 1 A cm–2 but not for smaller ones. Using X-ray absorption, X-ray photoemission spectroscopy, and X-ray diffraction, we confirmed that the degradation was accompanied by the literature-known transformation of nanoparticulate Ni3Se2 (bulk)/NiSe (surface) into nickel oxyhydroxide. The transformation of the precatalyst goes along with a significant improvement in the charge transfer kinetics observed by decreasing Tafel slopes with ongoing experimental time extracted from cyclic voltammetry (CV) experiments and electrochemical impedance spectroscopy (EIS) in the high-frequency range. However, these kinetic improvements are accompanied by limitations in mass transport concluded from decreasing current responses at high overpotentials in CVs and increasing impedance in the low-frequency range of the EIS spectra after extended CV cycling. These mass transport limitations originated from morphological degradations at the UME exceeding 1 A cm–2 which we proved by applying identical location scanning electron microscopy. This has not been reported in studies that have been limited to lower current densities before. Our findings showcase how UMEs can be used to study (pre)catalysts (herein nickel selenides) under current densities of industrial relevance in the absence of ohmic drop-related ambiguities, combined with in-depth materials characterization studies, e.g., identical location microscopy and advanced spectroscopic methods. This approach enables direct evaluation and comparison of catalyst materials and thus demonstrates how to overcome long-standing limitations of electrocatalyst design and testing.","lang":"eng"}],"extern":"1","publisher":"American Chemical Society (ACS)","_id":"62798","page":"41893-41903","volume":17,"user_id":"116779","status":"public","oa":"1","citation":{"ama":"Hiege F, Chang C-W, Trost O, et al. Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities. ACS Applied Materials & Interfaces. 2025;17(29):41893-41903. doi:10.1021/acsami.5c05381","bibtex":"@article{Hiege_Chang_Trost_van Halteren_Hosseini_Bendt_Schulz_Feng_Linnemann_Tschulik_2025, title={Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities}, volume={17}, DOI={10.1021/acsami.5c05381}, number={29}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Hiege, Felix and Chang, Chun-Wai and Trost, Oliver and van Halteren, Charlotte E. R. and Hosseini, Pouya and Bendt, Georg and Schulz, Stephan and Feng, Zhenxing and Linnemann, Julia and Tschulik, Kristina}, year={2025}, pages={41893–41903} }","mla":"Hiege, Felix, et al. “Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities.” ACS Applied Materials & Interfaces, vol. 17, no. 29, American Chemical Society (ACS), 2025, pp. 41893–903, doi:10.1021/acsami.5c05381.","chicago":"Hiege, Felix, Chun-Wai Chang, Oliver Trost, Charlotte E. R. van Halteren, Pouya Hosseini, Georg Bendt, Stephan Schulz, Zhenxing Feng, Julia Linnemann, and Kristina Tschulik. “Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities.” ACS Applied Materials & Interfaces 17, no. 29 (2025): 41893–903. https://doi.org/10.1021/acsami.5c05381.","short":"F. Hiege, C.-W. Chang, O. Trost, C.E.R. van Halteren, P. Hosseini, G. Bendt, S. Schulz, Z. Feng, J. Linnemann, K. Tschulik, ACS Applied Materials & Interfaces 17 (2025) 41893–41903.","apa":"Hiege, F., Chang, C.-W., Trost, O., van Halteren, C. E. R., Hosseini, P., Bendt, G., Schulz, S., Feng, Z., Linnemann, J., & Tschulik, K. (2025). Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities. ACS Applied Materials & Interfaces, 17(29), 41893–41903. https://doi.org/10.1021/acsami.5c05381","ieee":"F. Hiege et al., “Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities,” ACS Applied Materials & Interfaces, vol. 17, no. 29, pp. 41893–41903, 2025, doi: 10.1021/acsami.5c05381."},"quality_controlled":"1"},{"citation":{"bibtex":"@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN}, volume={15}, DOI={10.1021/acsami.3c06319}, number={33}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael and et al.}, year={2023}, pages={39513–39522} }","ama":"Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319","mla":"Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces, vol. 15, no. 33, American Chemical Society (ACS), 2023, pp. 39513–22, doi:10.1021/acsami.3c06319.","chicago":"Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces 15, no. 33 (2023): 39513–22. https://doi.org/10.1021/acsami.3c06319.","short":"M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.","ieee":"M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.","apa":"Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces, 15(33), 39513–39522. https://doi.org/10.1021/acsami.3c06319"},"page":"39513-39522","_id":"46741","publisher":"American Chemical Society (ACS)","user_id":"42514","volume":15,"status":"public","date_created":"2023-08-28T06:45:20Z","keyword":["General Materials Science"],"type":"journal_article","department":[{"_id":"15"},{"_id":"230"}],"issue":"33","publication":"ACS Applied Materials & Interfaces","language":[{"iso":"eng"}],"doi":"10.1021/acsami.3c06319","title":"Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN","year":"2023","author":[{"last_name":"Zscherp","first_name":"Mario Fabian","full_name":"Zscherp, Mario Fabian"},{"last_name":"Jentsch","first_name":"Silas Aurel","full_name":"Jentsch, Silas Aurel"},{"first_name":"Marius Johannes","last_name":"Müller","full_name":"Müller, Marius Johannes"},{"full_name":"Lider, Vitalii","last_name":"Lider","first_name":"Vitalii"},{"last_name":"Becker","first_name":"Celina","full_name":"Becker, Celina"},{"first_name":"Limei","last_name":"Chen","full_name":"Chen, Limei"},{"first_name":"Mario","last_name":"Littmann","full_name":"Littmann, Mario"},{"full_name":"Meier, Falco","last_name":"Meier","first_name":"Falco"},{"first_name":"Andreas","last_name":"Beyer","full_name":"Beyer, Andreas"},{"first_name":"Detlev Michael","last_name":"Hofmann","full_name":"Hofmann, Detlev Michael"},{"last_name":"As","first_name":"Donat Josef","orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","id":"14"},{"last_name":"Klar","first_name":"Peter Jens","full_name":"Klar, Peter Jens"},{"first_name":"Kerstin","last_name":"Volz","full_name":"Volz, Kerstin"},{"last_name":"Chatterjee","first_name":"Sangam","full_name":"Chatterjee, Sangam"},{"full_name":"Schörmann, Jörg","first_name":"Jörg","last_name":"Schörmann"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","date_updated":"2023-08-28T06:46:23Z","intvolume":" 15"},{"language":[{"iso":"eng"}],"doi":"10.1021/acsami.2c08257","publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"full_name":"Elizabeth, Amala","first_name":"Amala","last_name":"Elizabeth"},{"first_name":"Sudhir K.","last_name":"Sahoo","full_name":"Sahoo, Sudhir K."},{"full_name":"Phirke, Himanshu","last_name":"Phirke","first_name":"Himanshu"},{"full_name":"Kodalle, Tim","first_name":"Tim","last_name":"Kodalle"},{"last_name":"Kühne","first_name":"Thomas","full_name":"Kühne, Thomas","id":"49079"},{"last_name":"Audinot","first_name":"Jean-Nicolas","full_name":"Audinot, Jean-Nicolas"},{"full_name":"Wirtz, Tom","last_name":"Wirtz","first_name":"Tom"},{"first_name":"Alex","last_name":"Redinger","full_name":"Redinger, Alex"},{"full_name":"Kaufmann, Christian A.","last_name":"Kaufmann","first_name":"Christian A."},{"full_name":"Mirhosseini, Hossein","last_name":"Mirhosseini","orcid":"0000-0001-6179-1545","first_name":"Hossein","id":"71051"},{"full_name":"Mönig, Harry","last_name":"Mönig","first_name":"Harry"}],"title":"Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers","year":"2022","intvolume":" 14","publication_status":"published","date_updated":"2022-10-11T08:19:07Z","date_created":"2022-10-11T08:18:45Z","department":[{"_id":"613"}],"type":"journal_article","keyword":["General Materials Science"],"publication":"ACS Applied Materials & Interfaces","issue":"29","_id":"33686","publisher":"American Chemical Society (ACS)","page":"34101-34112","volume":14,"user_id":"71051","status":"public","citation":{"ama":"Elizabeth A, Sahoo SK, Phirke H, et al. Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers. ACS Applied Materials & Interfaces. 2022;14(29):34101-34112. doi:10.1021/acsami.2c08257","bibtex":"@article{Elizabeth_Sahoo_Phirke_Kodalle_Kühne_Audinot_Wirtz_Redinger_Kaufmann_Mirhosseini_et al._2022, title={Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers}, volume={14}, DOI={10.1021/acsami.2c08257}, number={29}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Elizabeth, Amala and Sahoo, Sudhir K. and Phirke, Himanshu and Kodalle, Tim and Kühne, Thomas and Audinot, Jean-Nicolas and Wirtz, Tom and Redinger, Alex and Kaufmann, Christian A. and Mirhosseini, Hossein and et al.}, year={2022}, pages={34101–34112} }","mla":"Elizabeth, Amala, et al. “Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers.” ACS Applied Materials & Interfaces, vol. 14, no. 29, American Chemical Society (ACS), 2022, pp. 34101–12, doi:10.1021/acsami.2c08257.","chicago":"Elizabeth, Amala, Sudhir K. Sahoo, Himanshu Phirke, Tim Kodalle, Thomas Kühne, Jean-Nicolas Audinot, Tom Wirtz, et al. “Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers.” ACS Applied Materials & Interfaces 14, no. 29 (2022): 34101–12. https://doi.org/10.1021/acsami.2c08257.","short":"A. Elizabeth, S.K. Sahoo, H. Phirke, T. Kodalle, T. Kühne, J.-N. Audinot, T. Wirtz, A. Redinger, C.A. Kaufmann, H. Mirhosseini, H. Mönig, ACS Applied Materials & Interfaces 14 (2022) 34101–34112.","apa":"Elizabeth, A., Sahoo, S. K., Phirke, H., Kodalle, T., Kühne, T., Audinot, J.-N., Wirtz, T., Redinger, A., Kaufmann, C. A., Mirhosseini, H., & Mönig, H. (2022). Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers. ACS Applied Materials & Interfaces, 14(29), 34101–34112. https://doi.org/10.1021/acsami.2c08257","ieee":"A. Elizabeth et al., “Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers,” ACS Applied Materials & Interfaces, vol. 14, no. 29, pp. 34101–34112, 2022, doi: 10.1021/acsami.2c08257."}},{"citation":{"mla":"Moritz, Dominik Christian, et al. “P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water.” ACS Applied Materials & Interfaces, vol. 14, no. 41, American Chemical Society (ACS), 2022, pp. 47255–61, doi:10.1021/acsami.2c13352.","bibtex":"@article{Moritz_Ruiz Alvarado_Zare Pour_Paszuk_Frieß_Runge_Hofmann_Hannappel_Schmidt_Jaegermann_2022, title={P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water}, volume={14}, DOI={10.1021/acsami.2c13352}, number={41}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Moritz, Dominik Christian and Ruiz Alvarado, Isaac Azahel and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Frieß, Tilo and Runge, Erich and Hofmann, Jan P. and Hannappel, Thomas and Schmidt, Wolf Gero and Jaegermann, Wolfram}, year={2022}, pages={47255–47261} }","ama":"Moritz DC, Ruiz Alvarado IA, Zare Pour MA, et al. P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water. ACS Applied Materials & Interfaces. 2022;14(41):47255-47261. doi:10.1021/acsami.2c13352","ieee":"D. C. Moritz et al., “P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water,” ACS Applied Materials & Interfaces, vol. 14, no. 41, pp. 47255–47261, 2022, doi: 10.1021/acsami.2c13352.","apa":"Moritz, D. C., Ruiz Alvarado, I. A., Zare Pour, M. A., Paszuk, A., Frieß, T., Runge, E., Hofmann, J. P., Hannappel, T., Schmidt, W. G., & Jaegermann, W. (2022). P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water. ACS Applied Materials & Interfaces, 14(41), 47255–47261. https://doi.org/10.1021/acsami.2c13352","chicago":"Moritz, Dominik Christian, Isaac Azahel Ruiz Alvarado, Mohammad Amin Zare Pour, Agnieszka Paszuk, Tilo Frieß, Erich Runge, Jan P. Hofmann, Thomas Hannappel, Wolf Gero Schmidt, and Wolfram Jaegermann. “P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water.” ACS Applied Materials & Interfaces 14, no. 41 (2022): 47255–61. https://doi.org/10.1021/acsami.2c13352.","short":"D.C. Moritz, I.A. Ruiz Alvarado, M.A. Zare Pour, A. Paszuk, T. Frieß, E. Runge, J.P. Hofmann, T. Hannappel, W.G. Schmidt, W. Jaegermann, ACS Applied Materials & Interfaces 14 (2022) 47255–47261."},"project":[{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"publisher":"American Chemical Society (ACS)","_id":"37681","page":"47255-47261","volume":14,"user_id":"16199","status":"public","date_created":"2023-01-20T10:02:58Z","department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}],"keyword":["General Materials Science"],"type":"journal_article","publication":"ACS Applied Materials & Interfaces","issue":"41","language":[{"iso":"eng"}],"doi":"10.1021/acsami.2c13352","author":[{"full_name":"Moritz, Dominik Christian","first_name":"Dominik Christian","last_name":"Moritz"},{"full_name":"Ruiz Alvarado, Isaac Azahel","last_name":"Ruiz Alvarado","first_name":"Isaac Azahel","orcid":"0000-0002-4710-1170","id":"79462"},{"full_name":"Zare Pour, Mohammad Amin","first_name":"Mohammad Amin","last_name":"Zare Pour"},{"first_name":"Agnieszka","last_name":"Paszuk","full_name":"Paszuk, Agnieszka"},{"first_name":"Tilo","last_name":"Frieß","full_name":"Frieß, Tilo"},{"last_name":"Runge","first_name":"Erich","full_name":"Runge, Erich"},{"last_name":"Hofmann","first_name":"Jan P.","full_name":"Hofmann, Jan P."},{"first_name":"Thomas","last_name":"Hannappel","full_name":"Hannappel, Thomas"},{"id":"468","first_name":"Wolf Gero","last_name":"Schmidt","orcid":"0000-0002-2717-5076","full_name":"Schmidt, Wolf Gero"},{"full_name":"Jaegermann, Wolfram","first_name":"Wolfram","last_name":"Jaegermann"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"title":"P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water","year":"2022","intvolume":" 14","publication_status":"published","date_updated":"2023-04-20T14:30:51Z"},{"citation":{"apa":"Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrück, H.-G., Unruh, T., Mecking, S., & Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces, 13, 32461–32466. https://doi.org/10.1021/acsami.1c05764","ieee":"B. Zhao et al., “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors,” ACS Applied Materials & Interfaces, vol. 13, pp. 32461–32466, 2021, doi: 10.1021/acsami.1c05764.","short":"B. Zhao, B. Gothe, A. Groh, T. Schmaltz, J. Will, H.-G. Steinrück, T. Unruh, S. Mecking, M. Halik, ACS Applied Materials & Interfaces 13 (2021) 32461–32466.","chicago":"Zhao, Baolin, Bastian Gothe, Arthur Groh, Thomas Schmaltz, Johannes Will, Hans-Georg Steinrück, Tobias Unruh, Stefan Mecking, and Marcus Halik. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces 13 (2021): 32461–66. https://doi.org/10.1021/acsami.1c05764.","mla":"Zhao, Baolin, et al. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces, vol. 13, 2021, pp. 32461–66, doi:10.1021/acsami.1c05764.","ama":"Zhao B, Gothe B, Groh A, et al. Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces. 2021;13:32461-32466. doi:10.1021/acsami.1c05764","bibtex":"@article{Zhao_Gothe_Groh_Schmaltz_Will_Steinrück_Unruh_Mecking_Halik_2021, title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors}, volume={13}, DOI={10.1021/acsami.1c05764}, journal={ACS Applied Materials & Interfaces}, author={Zhao, Baolin and Gothe, Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück, Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}, year={2021}, pages={32461–32466} }"},"publication":"ACS Applied Materials & Interfaces","department":[{"_id":"633"}],"type":"journal_article","date_created":"2021-09-01T09:09:36Z","intvolume":" 13","publication_status":"published","date_updated":"2022-01-06T06:55:57Z","publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"full_name":"Zhao, Baolin","first_name":"Baolin","last_name":"Zhao"},{"first_name":"Bastian","last_name":"Gothe","full_name":"Gothe, Bastian"},{"last_name":"Groh","first_name":"Arthur","full_name":"Groh, Arthur"},{"full_name":"Schmaltz, Thomas","first_name":"Thomas","last_name":"Schmaltz"},{"full_name":"Will, Johannes","last_name":"Will","first_name":"Johannes"},{"id":"84268","full_name":"Steinrück, Hans-Georg","first_name":"Hans-Georg","last_name":"Steinrück","orcid":"0000-0001-6373-0877"},{"first_name":"Tobias","last_name":"Unruh","full_name":"Unruh, Tobias"},{"first_name":"Stefan","last_name":"Mecking","full_name":"Mecking, Stefan"},{"full_name":"Halik, Marcus","first_name":"Marcus","last_name":"Halik"}],"title":"Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors","status":"public","year":"2021","volume":13,"user_id":"84268","doi":"10.1021/acsami.1c05764","_id":"23613","language":[{"iso":"eng"}],"page":"32461-32466"},{"citation":{"apa":"Ilic, I. K., Lepre, E., & Lopez Salas, N. (2021). Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors. ACS Applied Materials & Interfaces, Article acsami.1c06013. https://doi.org/10.1021/acsami.1c06013","ieee":"I. K. Ilic, E. Lepre, and N. Lopez Salas, “Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors,” ACS Applied Materials & Interfaces, Art. no. acsami.1c06013, 2021, doi: 10.1021/acsami.1c06013.","short":"I.K. Ilic, E. Lepre, N. Lopez Salas, ACS Applied Materials & Interfaces (2021).","chicago":"Ilic, Ivan K., Enrico Lepre, and Nieves Lopez Salas. “Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors.” ACS Applied Materials & Interfaces, 2021. https://doi.org/10.1021/acsami.1c06013.","mla":"Ilic, Ivan K., et al. “Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors.” ACS Applied Materials & Interfaces, acsami.1c06013, American Chemical Society (ACS), 2021, doi:10.1021/acsami.1c06013.","ama":"Ilic IK, Lepre E, Lopez Salas N. Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors. ACS Applied Materials & Interfaces. Published online 2021. doi:10.1021/acsami.1c06013","bibtex":"@article{Ilic_Lepre_Lopez Salas_2021, title={Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors}, DOI={10.1021/acsami.1c06013}, number={acsami.1c06013}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Ilic, Ivan K. and Lepre, Enrico and Lopez Salas, Nieves}, year={2021} }"},"publication":"ACS Applied Materials & Interfaces","date_created":"2023-01-27T16:20:40Z","type":"journal_article","keyword":["General Materials Science"],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"first_name":"Ivan K.","last_name":"Ilic","full_name":"Ilic, Ivan K."},{"full_name":"Lepre, Enrico","last_name":"Lepre","first_name":"Enrico"},{"id":"98120","full_name":"Lopez Salas, Nieves","first_name":"Nieves","last_name":"Lopez Salas","orcid":"https://orcid.org/0000-0002-8438-9548"}],"title":"Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors","year":"2021","status":"public","publication_status":"published","date_updated":"2023-01-27T16:31:41Z","_id":"40572","publisher":"American Chemical Society (ACS)","language":[{"iso":"eng"}],"article_number":"acsami.1c06013","user_id":"98120","doi":"10.1021/acsami.1c06013"},{"intvolume":" 12","date_updated":"2022-07-28T09:46:19Z","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"first_name":"Jie","last_name":"Li","full_name":"Li, Jie"},{"last_name":"Ji","first_name":"Chendong","full_name":"Ji, Chendong"},{"last_name":"Lü","first_name":"Baozhong","full_name":"Lü, Baozhong"},{"full_name":"Rodin, Maksim","first_name":"Maksim","last_name":"Rodin"},{"last_name":"Paradies","orcid":"0000-0002-3698-668X","first_name":"Jan","full_name":"Paradies, Jan","id":"53339"},{"full_name":"Yin, Meizhen","last_name":"Yin","first_name":"Meizhen"},{"id":"287","full_name":"Kuckling, Dirk","first_name":"Dirk","last_name":"Kuckling"}],"status":"public","year":"2020","title":"Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing","volume":12,"doi":"10.1021/acsami.0c08722","user_id":"94","language":[{"iso":"eng"}],"_id":"23852","page":"36873-36881","citation":{"ieee":"J. Li et al., “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing,” ACS Applied Materials & Interfaces, vol. 12, no. 33, pp. 36873–36881, 2020, doi: 10.1021/acsami.0c08722.","apa":"Li, J., Ji, C., Lü, B., Rodin, M., Paradies, J., Yin, M., & Kuckling, D. (2020). Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces, 12(33), 36873–36881. https://doi.org/10.1021/acsami.0c08722","short":"J. Li, C. Ji, B. Lü, M. Rodin, J. Paradies, M. Yin, D. Kuckling, ACS Applied Materials & Interfaces 12 (2020) 36873–36881.","chicago":"Li, Jie, Chendong Ji, Baozhong Lü, Maksim Rodin, Jan Paradies, Meizhen Yin, and Dirk Kuckling. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces 12, no. 33 (2020): 36873–81. https://doi.org/10.1021/acsami.0c08722.","mla":"Li, Jie, et al. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces, vol. 12, no. 33, 2020, pp. 36873–81, doi:10.1021/acsami.0c08722.","bibtex":"@article{Li_Ji_Lü_Rodin_Paradies_Yin_Kuckling_2020, title={Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing}, volume={12}, DOI={10.1021/acsami.0c08722}, number={33}, journal={ACS Applied Materials & Interfaces}, author={Li, Jie and Ji, Chendong and Lü, Baozhong and Rodin, Maksim and Paradies, Jan and Yin, Meizhen and Kuckling, Dirk}, year={2020}, pages={36873–36881} }","ama":"Li J, Ji C, Lü B, et al. Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces. 2020;12(33):36873-36881. doi:10.1021/acsami.0c08722"},"issue":"33","publication":"ACS Applied Materials & Interfaces","department":[{"_id":"311"}],"type":"journal_article","date_created":"2021-09-07T10:20:06Z"},{"type":"journal_article","date_created":"2021-05-26T10:27:33Z","publication":"ACS Applied Materials & Interfaces","citation":{"mla":"Li, Jie, et al. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces, 2020, pp. 36873–81, doi:10.1021/acsami.0c08722.","ama":"Li J, Ji C, Lü B, et al. Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces. Published online 2020:36873-36881. doi:10.1021/acsami.0c08722","bibtex":"@article{Li_Ji_Lü_Rodin_Paradies_Yin_Kuckling_2020, title={Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing}, DOI={10.1021/acsami.0c08722}, journal={ACS Applied Materials & Interfaces}, author={Li, Jie and Ji, Chendong and Lü, Baozhong and Rodin, Maksim and Paradies, Jan and Yin, Meizhen and Kuckling, Dirk}, year={2020}, pages={36873–36881} }","apa":"Li, J., Ji, C., Lü, B., Rodin, M., Paradies, J., Yin, M., & Kuckling, D. (2020). Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces, 36873–36881. https://doi.org/10.1021/acsami.0c08722","ieee":"J. Li et al., “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing,” ACS Applied Materials & Interfaces, pp. 36873–36881, 2020, doi: 10.1021/acsami.0c08722.","chicago":"Li, Jie, Chendong Ji, Baozhong Lü, Maksim Rodin, Jan Paradies, Meizhen Yin, and Dirk Kuckling. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces, 2020, 36873–81. https://doi.org/10.1021/acsami.0c08722.","short":"J. Li, C. Ji, B. Lü, M. Rodin, J. Paradies, M. Yin, D. Kuckling, ACS Applied Materials & Interfaces (2020) 36873–36881."},"user_id":"53339","doi":"10.1021/acsami.0c08722","page":"36873-36881","_id":"22235","language":[{"iso":"eng"}],"publication_status":"published","date_updated":"2023-01-23T12:57:54Z","status":"public","title":"Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing","year":"2020","publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"last_name":"Li","first_name":"Jie","full_name":"Li, Jie"},{"first_name":"Chendong","last_name":"Ji","full_name":"Ji, Chendong"},{"last_name":"Lü","first_name":"Baozhong","full_name":"Lü, Baozhong"},{"full_name":"Rodin, Maksim","last_name":"Rodin","first_name":"Maksim"},{"full_name":"Paradies, Jan","orcid":"0000-0002-3698-668X","last_name":"Paradies","first_name":"Jan","id":"53339"},{"first_name":"Meizhen","last_name":"Yin","full_name":"Yin, Meizhen"},{"id":"287","last_name":"Kuckling","first_name":"Dirk","full_name":"Kuckling, Dirk"}]},{"date_created":"2021-10-08T10:39:27Z","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"type":"journal_article","citation":{"apa":"Ivanova, A., Frka-Petesic, B., Paul, A., Wagner, T., Jumabekov, A. N., Vilk, Y., Weber, J., Schmedt auf der Günne, J., Vignolini, S., Tiemann, M., Fattakhova-Rohlfing, D., & Bein, T. (2020). Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing. ACS Applied Materials & Interfaces, 12639–12647. https://doi.org/10.1021/acsami.9b11891","ieee":"A. Ivanova et al., “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing,” ACS Applied Materials & Interfaces, pp. 12639–12647, 2020, doi: 10.1021/acsami.9b11891.","chicago":"Ivanova, Alesja, Bruno Frka-Petesic, Andrej Paul, Thorsten Wagner, Askhat N. Jumabekov, Yury Vilk, Johannes Weber, et al. “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing.” ACS Applied Materials & Interfaces, 2020, 12639–47. https://doi.org/10.1021/acsami.9b11891.","short":"A. Ivanova, B. Frka-Petesic, A. Paul, T. Wagner, A.N. Jumabekov, Y. Vilk, J. Weber, J. Schmedt auf der Günne, S. Vignolini, M. Tiemann, D. Fattakhova-Rohlfing, T. Bein, ACS Applied Materials & Interfaces (2020) 12639–12647.","mla":"Ivanova, Alesja, et al. “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing.” ACS Applied Materials & Interfaces, 2020, pp. 12639–47, doi:10.1021/acsami.9b11891.","ama":"Ivanova A, Frka-Petesic B, Paul A, et al. Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing. ACS Applied Materials & Interfaces. Published online 2020:12639-12647. doi:10.1021/acsami.9b11891","bibtex":"@article{Ivanova_Frka-Petesic_Paul_Wagner_Jumabekov_Vilk_Weber_Schmedt auf der Günne_Vignolini_Tiemann_et al._2020, title={Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing}, DOI={10.1021/acsami.9b11891}, journal={ACS Applied Materials & Interfaces}, author={Ivanova, Alesja and Frka-Petesic, Bruno and Paul, Andrej and Wagner, Thorsten and Jumabekov, Askhat N. and Vilk, Yury and Weber, Johannes and Schmedt auf der Günne, Jörn and Vignolini, Silvia and Tiemann, Michael and et al.}, year={2020}, pages={12639–12647} }"},"publication":"ACS Applied Materials & Interfaces","quality_controlled":"1","abstract":[{"text":"Porous tin dioxide is an important low-cost semiconductor applied in electronics, gas sensors, and biosensors. Here, we present a versatile template-assisted synthesis of nanostructured tin dioxide thin films using cellulose nanocrystals (CNCs). We demonstrate that the structural features of CNC-templated tin dioxide films strongly depend on the precursor composition. The precursor properties were studied by using low-temperature nuclear magnetic resonance spectroscopy of tin tetrachloride in solution. We demonstrate that it is possible to optimize the precursor conditions to obtain homogeneous precursor mixtures and therefore highly porous thin films with pore dimensions in the range of 10–20 nm (ABET = 46–64 m2 g–1, measured on powder). Finally, by exploiting the high surface area of the material, we developed a resistive gas sensor based on CNC-templated tin dioxide. The sensor shows high sensitivity to carbon monoxide (CO) in ppm concentrations and low cross-sensitivity to humidity. Most importantly, the sensing kinetics are remarkably fast; both the response to the analyte gas and the signal decay after gas exposure occur within a few seconds, faster than in standard SnO2-based CO sensors. This is attributed to the high gas accessibility of the very thin porous film.","lang":"eng"}],"_id":"25903","language":[{"iso":"eng"}],"page":"12639-12647","doi":"10.1021/acsami.9b11891","user_id":"23547","author":[{"full_name":"Ivanova, Alesja","last_name":"Ivanova","first_name":"Alesja"},{"full_name":"Frka-Petesic, Bruno","last_name":"Frka-Petesic","first_name":"Bruno"},{"first_name":"Andrej","last_name":"Paul","full_name":"Paul, Andrej"},{"last_name":"Wagner","first_name":"Thorsten","full_name":"Wagner, Thorsten"},{"last_name":"Jumabekov","first_name":"Askhat N.","full_name":"Jumabekov, Askhat N."},{"full_name":"Vilk, Yury","last_name":"Vilk","first_name":"Yury"},{"full_name":"Weber, Johannes","last_name":"Weber","first_name":"Johannes"},{"last_name":"Schmedt auf der Günne","first_name":"Jörn","full_name":"Schmedt auf der Günne, Jörn"},{"last_name":"Vignolini","first_name":"Silvia","full_name":"Vignolini, Silvia"},{"full_name":"Tiemann, Michael","orcid":"0000-0003-1711-2722","first_name":"Michael","last_name":"Tiemann","id":"23547"},{"first_name":"Dina","last_name":"Fattakhova-Rohlfing","full_name":"Fattakhova-Rohlfing, Dina"},{"last_name":"Bein","first_name":"Thomas","full_name":"Bein, Thomas"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"title":"Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing","status":"public","year":"2020","article_type":"original","date_updated":"2023-03-08T08:23:16Z","publication_status":"published"},{"date_created":"2021-07-27T14:11:16Z","type":"journal_article","publication":"ACS Applied Materials & Interfaces","citation":{"bibtex":"@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_Arcos_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and Gilbert, Wolfram and Arcos, Teresa de los and Schierbaum, Klaus and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }","chicago":"Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe, Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.","short":"L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert, T. de los Arcos, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS Applied Materials & Interfaces (2019) 3169–3180.","ama":"Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces. 2019:3169-3180. doi:10.1021/acsami.8b16443","ieee":"L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces, pp. 3169–3180, 2019.","apa":"Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., … Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180. https://doi.org/10.1021/acsami.8b16443","mla":"Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, pp. 3169–80, doi:10.1021/acsami.8b16443."},"page":"3169-3180","_id":"22833","language":[{"iso":"eng"}],"doi":"10.1021/acsami.8b16443","user_id":"194","title":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","status":"public","year":"2019","author":[{"first_name":"Lukas","last_name":"Mai","full_name":"Mai, Lukas"},{"full_name":"Zanders, David","first_name":"David","last_name":"Zanders"},{"last_name":"Subaşı","first_name":"Ersoy","full_name":"Subaşı, Ersoy"},{"full_name":"Ciftyurek, Engin","last_name":"Ciftyurek","first_name":"Engin"},{"id":"27401","full_name":"Hoppe, Christian","last_name":"Hoppe","first_name":"Christian"},{"first_name":"Detlef","last_name":"Rogalla","full_name":"Rogalla, Detlef"},{"full_name":"Gilbert, Wolfram","last_name":"Gilbert","first_name":"Wolfram"},{"full_name":"Arcos, Teresa de los","last_name":"Arcos","first_name":"Teresa de los"},{"first_name":"Klaus","last_name":"Schierbaum","full_name":"Schierbaum, Klaus"},{"first_name":"Guido","last_name":"Grundmeier","full_name":"Grundmeier, Guido","id":"194"},{"full_name":"Bock, Claudia","first_name":"Claudia","last_name":"Bock"},{"first_name":"Anjana","last_name":"Devi","full_name":"Devi, Anjana"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_updated":"2022-01-06T06:55:42Z","publication_status":"published"},{"user_id":"71051","doi":"10.1021/acsami.9b02158","page":"14821-14829","language":[{"iso":"eng"}],"_id":"15726","publication_status":"published","date_updated":"2022-07-21T09:41:18Z","article_type":"original","title":"Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries","year":"2019","status":"public","publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"last_name":"Chugh","first_name":"Manjusha","full_name":"Chugh, Manjusha"},{"full_name":"Kühne, Thomas","first_name":"Thomas","last_name":"Kühne","id":"49079"},{"id":"71051","full_name":"Mirhosseini, S. Hossein","orcid":"0000-0001-6179-1545","last_name":"Mirhosseini","first_name":"S. Hossein"}],"type":"journal_article","date_created":"2020-01-30T13:07:16Z","abstract":[{"text":"The behavior of alkali atom point defects in polycrystalline CuInSe2 is studied. In this work, three grain boundary models, one coherent twin boundary and two twin boundaries with dislocation cores, are considered. Total energy calculations show that all alkali metals tend to segregate at the grain boundaries. In addition, the segregation of alkali atoms is more pronounced at the grain boundaries with the dislocation cores. The diffusion of alkali metals along and near grain boundaries is studied as well. The results show that the diffusion of alkali atoms in the grain boundary models is faster than within the bulk. In addition, the ion exchange between Na and Rb atoms at the grain boundaries leads to the Rb enrichment at the grain boundaries and the increase of the Na concentration in the bulk. While the effects of Na and Rb point defects on the electronic structure of the grain boundary with the anion-core dislocation are similar, Rb atoms passivate the grain boundary with the cation-core dislocation more effectively than Na. This can explain the further improvement of the solar cell performance after the RbF-postdeposition treatment.","lang":"eng"}],"publication":"ACS Applied Materials & Interfaces","citation":{"short":"M. Chugh, T. Kühne, S.H. Mirhosseini, ACS Applied Materials & Interfaces (2019) 14821–14829.","chicago":"Chugh, Manjusha, Thomas Kühne, and S. Hossein Mirhosseini. “Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries.” ACS Applied Materials & Interfaces, 2019, 14821–29. https://doi.org/10.1021/acsami.9b02158.","ieee":"M. Chugh, T. Kühne, and S. H. Mirhosseini, “Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries,” ACS Applied Materials & Interfaces, pp. 14821–14829, 2019, doi: 10.1021/acsami.9b02158.","apa":"Chugh, M., Kühne, T., & Mirhosseini, S. H. (2019). Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries. ACS Applied Materials & Interfaces, 14821–14829. https://doi.org/10.1021/acsami.9b02158","bibtex":"@article{Chugh_Kühne_Mirhosseini_2019, title={Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries}, DOI={10.1021/acsami.9b02158}, journal={ACS Applied Materials & Interfaces}, author={Chugh, Manjusha and Kühne, Thomas and Mirhosseini, S. Hossein}, year={2019}, pages={14821–14829} }","ama":"Chugh M, Kühne T, Mirhosseini SH. Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries. ACS Applied Materials & Interfaces. Published online 2019:14821-14829. doi:10.1021/acsami.9b02158","mla":"Chugh, Manjusha, et al. “Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries.” ACS Applied Materials & Interfaces, 2019, pp. 14821–29, doi:10.1021/acsami.9b02158."}},{"page":"3169-3180","language":[{"iso":"eng"}],"_id":"22545","doi":"10.1021/acsami.8b16443","user_id":"54556","year":"2019","title":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","status":"public","author":[{"full_name":"Mai, Lukas","first_name":"Lukas","last_name":"Mai"},{"full_name":"Zanders, David","first_name":"David","last_name":"Zanders"},{"full_name":"Subaşı, Ersoy","last_name":"Subaşı","first_name":"Ersoy"},{"first_name":"Engin","last_name":"Ciftyurek","full_name":"Ciftyurek, Engin"},{"full_name":"Hoppe, Christian","last_name":"Hoppe","first_name":"Christian"},{"full_name":"Rogalla, Detlef","first_name":"Detlef","last_name":"Rogalla"},{"last_name":"Gilbert","first_name":"Wolfram","full_name":"Gilbert, Wolfram"},{"full_name":"de los Arcos de Pedro, Maria Teresa","first_name":"Maria Teresa","last_name":"de los Arcos de Pedro","id":"54556"},{"first_name":"Klaus","last_name":"Schierbaum","full_name":"Schierbaum, Klaus"},{"full_name":"Grundmeier, Guido","last_name":"Grundmeier","first_name":"Guido","id":"194"},{"first_name":"Claudia","last_name":"Bock","full_name":"Bock, Claudia"},{"full_name":"Devi, Anjana","last_name":"Devi","first_name":"Anjana"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_updated":"2023-01-24T08:35:14Z","publication_status":"published","date_created":"2021-07-07T08:49:23Z","type":"journal_article","department":[{"_id":"302"}],"publication":"ACS Applied Materials & Interfaces","citation":{"mla":"Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, pp. 3169–80, doi:10.1021/acsami.8b16443.","bibtex":"@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_de los Arcos de Pedro_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and Gilbert, Wolfram and de los Arcos de Pedro, Maria Teresa and Schierbaum, Klaus and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }","ama":"Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces. Published online 2019:3169-3180. doi:10.1021/acsami.8b16443","ieee":"L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces, pp. 3169–3180, 2019, doi: 10.1021/acsami.8b16443.","apa":"Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., Gilbert, W., de los Arcos de Pedro, M. T., Schierbaum, K., Grundmeier, G., Bock, C., & Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. 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