[{"language":[{"iso":"eng"}],"date_updated":"2023-08-28T06:46:23Z","doi":"10.1021/acsami.3c06319","department":[{"_id":"15"},{"_id":"230"}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","title":"Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN","year":"2023","type":"journal_article","citation":{"mla":"Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces, vol. 15, no. 33, American Chemical Society (ACS), 2023, pp. 39513–22, doi:10.1021/acsami.3c06319.","bibtex":"@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN}, volume={15}, DOI={10.1021/acsami.3c06319}, number={33}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael and et al.}, year={2023}, pages={39513–39522} }","ama":"Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319","apa":"Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen, L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J., Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN. ACS Applied Materials & Interfaces, 15(33), 39513–39522. https://doi.org/10.1021/acsami.3c06319","chicago":"Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.” ACS Applied Materials & Interfaces 15, no. 33 (2023): 39513–22. https://doi.org/10.1021/acsami.3c06319.","ieee":"M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN,” ACS Applied Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi: 10.1021/acsami.3c06319.","short":"M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522."},"page":"39513-39522","_id":"46741","intvolume":" 15","issue":"33","publisher":"American Chemical Society (ACS)","author":[{"last_name":"Zscherp","full_name":"Zscherp, Mario Fabian","first_name":"Mario Fabian"},{"first_name":"Silas Aurel","full_name":"Jentsch, Silas Aurel","last_name":"Jentsch"},{"last_name":"Müller","full_name":"Müller, Marius Johannes","first_name":"Marius Johannes"},{"last_name":"Lider","first_name":"Vitalii","full_name":"Lider, Vitalii"},{"full_name":"Becker, Celina","first_name":"Celina","last_name":"Becker"},{"first_name":"Limei","full_name":"Chen, Limei","last_name":"Chen"},{"first_name":"Mario","full_name":"Littmann, Mario","last_name":"Littmann"},{"last_name":"Meier","full_name":"Meier, Falco","first_name":"Falco"},{"first_name":"Andreas","full_name":"Beyer, Andreas","last_name":"Beyer"},{"last_name":"Hofmann","first_name":"Detlev Michael","full_name":"Hofmann, Detlev Michael"},{"orcid":"0000-0003-1121-3565","full_name":"As, Donat Josef","first_name":"Donat Josef","id":"14","last_name":"As"},{"last_name":"Klar","full_name":"Klar, Peter Jens","first_name":"Peter Jens"},{"last_name":"Volz","full_name":"Volz, Kerstin","first_name":"Kerstin"},{"first_name":"Sangam","full_name":"Chatterjee, Sangam","last_name":"Chatterjee"},{"last_name":"Schörmann","first_name":"Jörg","full_name":"Schörmann, Jörg"}],"publication":"ACS Applied Materials & Interfaces","keyword":["General Materials Science"],"volume":15,"status":"public","date_created":"2023-08-28T06:45:20Z","user_id":"42514"},{"date_updated":"2022-10-11T08:19:07Z","doi":"10.1021/acsami.2c08257","language":[{"iso":"eng"}],"title":"Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers","department":[{"_id":"613"}],"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"_id":"33686","intvolume":" 14","issue":"29","page":"34101-34112","year":"2022","type":"journal_article","citation":{"chicago":"Elizabeth, Amala, Sudhir K. Sahoo, Himanshu Phirke, Tim Kodalle, Thomas Kühne, Jean-Nicolas Audinot, Tom Wirtz, et al. “Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers.” ACS Applied Materials & Interfaces 14, no. 29 (2022): 34101–12. https://doi.org/10.1021/acsami.2c08257.","ama":"Elizabeth A, Sahoo SK, Phirke H, et al. Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers. ACS Applied Materials & Interfaces. 2022;14(29):34101-34112. doi:10.1021/acsami.2c08257","apa":"Elizabeth, A., Sahoo, S. K., Phirke, H., Kodalle, T., Kühne, T., Audinot, J.-N., Wirtz, T., Redinger, A., Kaufmann, C. A., Mirhosseini, H., & Mönig, H. (2022). Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers. ACS Applied Materials & Interfaces, 14(29), 34101–34112. https://doi.org/10.1021/acsami.2c08257","mla":"Elizabeth, Amala, et al. “Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers.” ACS Applied Materials & Interfaces, vol. 14, no. 29, American Chemical Society (ACS), 2022, pp. 34101–12, doi:10.1021/acsami.2c08257.","bibtex":"@article{Elizabeth_Sahoo_Phirke_Kodalle_Kühne_Audinot_Wirtz_Redinger_Kaufmann_Mirhosseini_et al._2022, title={Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers}, volume={14}, DOI={10.1021/acsami.2c08257}, number={29}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Elizabeth, Amala and Sahoo, Sudhir K. and Phirke, Himanshu and Kodalle, Tim and Kühne, Thomas and Audinot, Jean-Nicolas and Wirtz, Tom and Redinger, Alex and Kaufmann, Christian A. and Mirhosseini, Hossein and et al.}, year={2022}, pages={34101–34112} }","short":"A. Elizabeth, S.K. Sahoo, H. Phirke, T. Kodalle, T. Kühne, J.-N. Audinot, T. Wirtz, A. Redinger, C.A. Kaufmann, H. Mirhosseini, H. Mönig, ACS Applied Materials & Interfaces 14 (2022) 34101–34112.","ieee":"A. Elizabeth et al., “Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers,” ACS Applied Materials & Interfaces, vol. 14, no. 29, pp. 34101–34112, 2022, doi: 10.1021/acsami.2c08257."},"user_id":"71051","publication":"ACS Applied Materials & Interfaces","keyword":["General Materials Science"],"author":[{"full_name":"Elizabeth, Amala","first_name":"Amala","last_name":"Elizabeth"},{"first_name":"Sudhir K.","full_name":"Sahoo, Sudhir K.","last_name":"Sahoo"},{"first_name":"Himanshu","full_name":"Phirke, Himanshu","last_name":"Phirke"},{"first_name":"Tim","full_name":"Kodalle, Tim","last_name":"Kodalle"},{"first_name":"Thomas","full_name":"Kühne, Thomas","last_name":"Kühne","id":"49079"},{"last_name":"Audinot","full_name":"Audinot, Jean-Nicolas","first_name":"Jean-Nicolas"},{"last_name":"Wirtz","full_name":"Wirtz, Tom","first_name":"Tom"},{"last_name":"Redinger","full_name":"Redinger, Alex","first_name":"Alex"},{"last_name":"Kaufmann","first_name":"Christian A.","full_name":"Kaufmann, Christian A."},{"id":"71051","last_name":"Mirhosseini","full_name":"Mirhosseini, Hossein","orcid":"0000-0001-6179-1545","first_name":"Hossein"},{"first_name":"Harry","full_name":"Mönig, Harry","last_name":"Mönig"}],"publisher":"American Chemical Society (ACS)","date_created":"2022-10-11T08:18:45Z","status":"public","volume":14},{"user_id":"16199","date_created":"2023-01-20T10:02:58Z","status":"public","volume":14,"keyword":["General Materials Science"],"publication":"ACS Applied Materials & Interfaces","publisher":"American Chemical Society (ACS)","author":[{"last_name":"Moritz","first_name":"Dominik Christian","full_name":"Moritz, Dominik Christian"},{"first_name":"Isaac Azahel","orcid":"0000-0002-4710-1170","full_name":"Ruiz Alvarado, Isaac Azahel","last_name":"Ruiz Alvarado","id":"79462"},{"first_name":"Mohammad Amin","full_name":"Zare Pour, Mohammad Amin","last_name":"Zare Pour"},{"last_name":"Paszuk","first_name":"Agnieszka","full_name":"Paszuk, Agnieszka"},{"first_name":"Tilo","full_name":"Frieß, Tilo","last_name":"Frieß"},{"last_name":"Runge","full_name":"Runge, Erich","first_name":"Erich"},{"full_name":"Hofmann, Jan P.","first_name":"Jan P.","last_name":"Hofmann"},{"last_name":"Hannappel","first_name":"Thomas","full_name":"Hannappel, Thomas"},{"last_name":"Schmidt","id":"468","first_name":"Wolf Gero","full_name":"Schmidt, Wolf Gero","orcid":"0000-0002-2717-5076"},{"last_name":"Jaegermann","full_name":"Jaegermann, Wolfram","first_name":"Wolfram"}],"issue":"41","_id":"37681","intvolume":" 14","page":"47255-47261","year":"2022","citation":{"short":"D.C. Moritz, I.A. Ruiz Alvarado, M.A. Zare Pour, A. Paszuk, T. Frieß, E. Runge, J.P. Hofmann, T. Hannappel, W.G. Schmidt, W. Jaegermann, ACS Applied Materials & Interfaces 14 (2022) 47255–47261.","ieee":"D. C. Moritz et al., “P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water,” ACS Applied Materials & Interfaces, vol. 14, no. 41, pp. 47255–47261, 2022, doi: 10.1021/acsami.2c13352.","apa":"Moritz, D. C., Ruiz Alvarado, I. A., Zare Pour, M. A., Paszuk, A., Frieß, T., Runge, E., Hofmann, J. P., Hannappel, T., Schmidt, W. G., & Jaegermann, W. (2022). P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water. ACS Applied Materials & Interfaces, 14(41), 47255–47261. https://doi.org/10.1021/acsami.2c13352","ama":"Moritz DC, Ruiz Alvarado IA, Zare Pour MA, et al. P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water. ACS Applied Materials & Interfaces. 2022;14(41):47255-47261. doi:10.1021/acsami.2c13352","chicago":"Moritz, Dominik Christian, Isaac Azahel Ruiz Alvarado, Mohammad Amin Zare Pour, Agnieszka Paszuk, Tilo Frieß, Erich Runge, Jan P. Hofmann, Thomas Hannappel, Wolf Gero Schmidt, and Wolfram Jaegermann. “P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water.” ACS Applied Materials & Interfaces 14, no. 41 (2022): 47255–61. https://doi.org/10.1021/acsami.2c13352.","mla":"Moritz, Dominik Christian, et al. “P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water.” ACS Applied Materials & Interfaces, vol. 14, no. 41, American Chemical Society (ACS), 2022, pp. 47255–61, doi:10.1021/acsami.2c13352.","bibtex":"@article{Moritz_Ruiz Alvarado_Zare Pour_Paszuk_Frieß_Runge_Hofmann_Hannappel_Schmidt_Jaegermann_2022, title={P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water}, volume={14}, DOI={10.1021/acsami.2c13352}, number={41}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Moritz, Dominik Christian and Ruiz Alvarado, Isaac Azahel and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Frieß, Tilo and Runge, Erich and Hofmann, Jan P. and Hannappel, Thomas and Schmidt, Wolf Gero and Jaegermann, Wolfram}, year={2022}, pages={47255–47261} }"},"type":"journal_article","title":"P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water","project":[{"_id":"52","name":"PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing"}],"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"department":[{"_id":"15"},{"_id":"170"},{"_id":"295"},{"_id":"230"},{"_id":"35"}],"doi":"10.1021/acsami.2c13352","date_updated":"2023-04-20T14:30:51Z","language":[{"iso":"eng"}]},{"_id":"23613","intvolume":" 13","date_updated":"2022-01-06T06:55:57Z","doi":"10.1021/acsami.1c05764","year":"2021","citation":{"ieee":"B. Zhao et al., “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors,” ACS Applied Materials & Interfaces, vol. 13, pp. 32461–32466, 2021, doi: 10.1021/acsami.1c05764.","short":"B. Zhao, B. Gothe, A. Groh, T. Schmaltz, J. Will, H.-G. Steinrück, T. Unruh, S. Mecking, M. Halik, ACS Applied Materials & Interfaces 13 (2021) 32461–32466.","bibtex":"@article{Zhao_Gothe_Groh_Schmaltz_Will_Steinrück_Unruh_Mecking_Halik_2021, title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors}, volume={13}, DOI={10.1021/acsami.1c05764}, journal={ACS Applied Materials & Interfaces}, author={Zhao, Baolin and Gothe, Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück, Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}, year={2021}, pages={32461–32466} }","mla":"Zhao, Baolin, et al. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces, vol. 13, 2021, pp. 32461–66, doi:10.1021/acsami.1c05764.","chicago":"Zhao, Baolin, Bastian Gothe, Arthur Groh, Thomas Schmaltz, Johannes Will, Hans-Georg Steinrück, Tobias Unruh, Stefan Mecking, and Marcus Halik. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS Applied Materials & Interfaces 13 (2021): 32461–66. https://doi.org/10.1021/acsami.1c05764.","ama":"Zhao B, Gothe B, Groh A, et al. Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces. 2021;13:32461-32466. doi:10.1021/acsami.1c05764","apa":"Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrück, H.-G., Unruh, T., Mecking, S., & Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces, 13, 32461–32466. https://doi.org/10.1021/acsami.1c05764"},"type":"journal_article","page":"32461-32466","language":[{"iso":"eng"}],"title":"Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors","user_id":"84268","author":[{"first_name":"Baolin","full_name":"Zhao, Baolin","last_name":"Zhao"},{"full_name":"Gothe, Bastian","first_name":"Bastian","last_name":"Gothe"},{"last_name":"Groh","first_name":"Arthur","full_name":"Groh, Arthur"},{"first_name":"Thomas","full_name":"Schmaltz, Thomas","last_name":"Schmaltz"},{"first_name":"Johannes","full_name":"Will, Johannes","last_name":"Will"},{"last_name":"Steinrück","id":"84268","first_name":"Hans-Georg","full_name":"Steinrück, Hans-Georg","orcid":"0000-0001-6373-0877"},{"full_name":"Unruh, Tobias","first_name":"Tobias","last_name":"Unruh"},{"first_name":"Stefan","full_name":"Mecking, Stefan","last_name":"Mecking"},{"last_name":"Halik","first_name":"Marcus","full_name":"Halik, Marcus"}],"department":[{"_id":"633"}],"publication":"ACS Applied Materials & Interfaces","volume":13,"publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","status":"public","date_created":"2021-09-01T09:09:36Z"},{"publisher":"American Chemical Society (ACS)","author":[{"full_name":"Ilic, Ivan K.","first_name":"Ivan K.","last_name":"Ilic"},{"last_name":"Lepre","full_name":"Lepre, Enrico","first_name":"Enrico"},{"orcid":"https://orcid.org/0000-0002-8438-9548","full_name":"Lopez Salas, Nieves","first_name":"Nieves","id":"98120","last_name":"Lopez Salas"}],"keyword":["General Materials Science"],"publication":"ACS Applied Materials & Interfaces","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"status":"public","date_created":"2023-01-27T16:20:40Z","title":"Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors","user_id":"98120","type":"journal_article","year":"2021","citation":{"ieee":"I. K. Ilic, E. Lepre, and N. Lopez Salas, “Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors,” ACS Applied Materials & Interfaces, Art. no. acsami.1c06013, 2021, doi: 10.1021/acsami.1c06013.","short":"I.K. Ilic, E. Lepre, N. Lopez Salas, ACS Applied Materials & Interfaces (2021).","mla":"Ilic, Ivan K., et al. “Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors.” ACS Applied Materials & Interfaces, acsami.1c06013, American Chemical Society (ACS), 2021, doi:10.1021/acsami.1c06013.","bibtex":"@article{Ilic_Lepre_Lopez Salas_2021, title={Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors}, DOI={10.1021/acsami.1c06013}, number={acsami.1c06013}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Ilic, Ivan K. and Lepre, Enrico and Lopez Salas, Nieves}, year={2021} }","chicago":"Ilic, Ivan K., Enrico Lepre, and Nieves Lopez Salas. “Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors.” ACS Applied Materials & Interfaces, 2021. https://doi.org/10.1021/acsami.1c06013.","ama":"Ilic IK, Lepre E, Lopez Salas N. Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors. ACS Applied Materials & Interfaces. Published online 2021. doi:10.1021/acsami.1c06013","apa":"Ilic, I. K., Lepre, E., & Lopez Salas, N. (2021). Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors. ACS Applied Materials & Interfaces, Article acsami.1c06013. https://doi.org/10.1021/acsami.1c06013"},"language":[{"iso":"eng"}],"date_updated":"2023-01-27T16:31:41Z","_id":"40572","article_number":"acsami.1c06013","doi":"10.1021/acsami.1c06013"},{"language":[{"iso":"eng"}],"citation":{"apa":"Li, J., Ji, C., Lü, B., Rodin, M., Paradies, J., Yin, M., & Kuckling, D. (2020). Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces, 12(33), 36873–36881. https://doi.org/10.1021/acsami.0c08722","ama":"Li J, Ji C, Lü B, et al. Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces. 2020;12(33):36873-36881. doi:10.1021/acsami.0c08722","chicago":"Li, Jie, Chendong Ji, Baozhong Lü, Maksim Rodin, Jan Paradies, Meizhen Yin, and Dirk Kuckling. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces 12, no. 33 (2020): 36873–81. https://doi.org/10.1021/acsami.0c08722.","bibtex":"@article{Li_Ji_Lü_Rodin_Paradies_Yin_Kuckling_2020, title={Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing}, volume={12}, DOI={10.1021/acsami.0c08722}, number={33}, journal={ACS Applied Materials & Interfaces}, author={Li, Jie and Ji, Chendong and Lü, Baozhong and Rodin, Maksim and Paradies, Jan and Yin, Meizhen and Kuckling, Dirk}, year={2020}, pages={36873–36881} }","mla":"Li, Jie, et al. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces, vol. 12, no. 33, 2020, pp. 36873–81, doi:10.1021/acsami.0c08722.","short":"J. Li, C. Ji, B. Lü, M. Rodin, J. Paradies, M. Yin, D. Kuckling, ACS Applied Materials & Interfaces 12 (2020) 36873–36881.","ieee":"J. Li et al., “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing,” ACS Applied Materials & Interfaces, vol. 12, no. 33, pp. 36873–36881, 2020, doi: 10.1021/acsami.0c08722."},"year":"2020","type":"journal_article","page":"36873-36881","date_updated":"2022-07-28T09:46:19Z","_id":"23852","intvolume":" 12","issue":"33","doi":"10.1021/acsami.0c08722","author":[{"last_name":"Li","first_name":"Jie","full_name":"Li, Jie"},{"first_name":"Chendong","full_name":"Ji, Chendong","last_name":"Ji"},{"full_name":"Lü, Baozhong","first_name":"Baozhong","last_name":"Lü"},{"first_name":"Maksim","full_name":"Rodin, Maksim","last_name":"Rodin"},{"first_name":"Jan","orcid":"0000-0002-3698-668X","full_name":"Paradies, Jan","last_name":"Paradies","id":"53339"},{"last_name":"Yin","full_name":"Yin, Meizhen","first_name":"Meizhen"},{"last_name":"Kuckling","id":"287","first_name":"Dirk","full_name":"Kuckling, Dirk"}],"publication":"ACS Applied Materials & Interfaces","department":[{"_id":"311"}],"status":"public","date_created":"2021-09-07T10:20:06Z","volume":12,"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"user_id":"94","title":"Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing"},{"publication":"ACS Applied Materials & Interfaces","author":[{"full_name":"Li, Jie","first_name":"Jie","last_name":"Li"},{"last_name":"Ji","first_name":"Chendong","full_name":"Ji, Chendong"},{"first_name":"Baozhong","full_name":"Lü, Baozhong","last_name":"Lü"},{"last_name":"Rodin","full_name":"Rodin, Maksim","first_name":"Maksim"},{"first_name":"Jan","orcid":"0000-0002-3698-668X","full_name":"Paradies, Jan","last_name":"Paradies","id":"53339"},{"first_name":"Meizhen","full_name":"Yin, Meizhen","last_name":"Yin"},{"first_name":"Dirk","full_name":"Kuckling, Dirk","last_name":"Kuckling","id":"287"}],"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_created":"2021-05-26T10:27:33Z","status":"public","title":"Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing","user_id":"53339","page":"36873-36881","type":"journal_article","citation":{"short":"J. Li, C. Ji, B. Lü, M. Rodin, J. Paradies, M. Yin, D. Kuckling, ACS Applied Materials & Interfaces (2020) 36873–36881.","ieee":"J. Li et al., “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing,” ACS Applied Materials & Interfaces, pp. 36873–36881, 2020, doi: 10.1021/acsami.0c08722.","chicago":"Li, Jie, Chendong Ji, Baozhong Lü, Maksim Rodin, Jan Paradies, Meizhen Yin, and Dirk Kuckling. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces, 2020, 36873–81. https://doi.org/10.1021/acsami.0c08722.","apa":"Li, J., Ji, C., Lü, B., Rodin, M., Paradies, J., Yin, M., & Kuckling, D. (2020). Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces, 36873–36881. https://doi.org/10.1021/acsami.0c08722","ama":"Li J, Ji C, Lü B, et al. Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing. ACS Applied Materials & Interfaces. Published online 2020:36873-36881. doi:10.1021/acsami.0c08722","bibtex":"@article{Li_Ji_Lü_Rodin_Paradies_Yin_Kuckling_2020, title={Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing}, DOI={10.1021/acsami.0c08722}, journal={ACS Applied Materials & Interfaces}, author={Li, Jie and Ji, Chendong and Lü, Baozhong and Rodin, Maksim and Paradies, Jan and Yin, Meizhen and Kuckling, Dirk}, year={2020}, pages={36873–36881} }","mla":"Li, Jie, et al. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.” ACS Applied Materials & Interfaces, 2020, pp. 36873–81, doi:10.1021/acsami.0c08722."},"year":"2020","language":[{"iso":"eng"}],"_id":"22235","date_updated":"2023-01-23T12:57:54Z","doi":"10.1021/acsami.0c08722"},{"language":[{"iso":"eng"}],"page":"12639-12647","year":"2020","citation":{"ieee":"A. Ivanova et al., “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing,” ACS Applied Materials & Interfaces, pp. 12639–12647, 2020, doi: 10.1021/acsami.9b11891.","short":"A. Ivanova, B. Frka-Petesic, A. Paul, T. Wagner, A.N. Jumabekov, Y. Vilk, J. Weber, J. Schmedt auf der Günne, S. Vignolini, M. Tiemann, D. Fattakhova-Rohlfing, T. Bein, ACS Applied Materials & Interfaces (2020) 12639–12647.","bibtex":"@article{Ivanova_Frka-Petesic_Paul_Wagner_Jumabekov_Vilk_Weber_Schmedt auf der Günne_Vignolini_Tiemann_et al._2020, title={Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing}, DOI={10.1021/acsami.9b11891}, journal={ACS Applied Materials & Interfaces}, author={Ivanova, Alesja and Frka-Petesic, Bruno and Paul, Andrej and Wagner, Thorsten and Jumabekov, Askhat N. and Vilk, Yury and Weber, Johannes and Schmedt auf der Günne, Jörn and Vignolini, Silvia and Tiemann, Michael and et al.}, year={2020}, pages={12639–12647} }","mla":"Ivanova, Alesja, et al. “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing.” ACS Applied Materials & Interfaces, 2020, pp. 12639–47, doi:10.1021/acsami.9b11891.","ama":"Ivanova A, Frka-Petesic B, Paul A, et al. Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing. ACS Applied Materials & Interfaces. Published online 2020:12639-12647. doi:10.1021/acsami.9b11891","apa":"Ivanova, A., Frka-Petesic, B., Paul, A., Wagner, T., Jumabekov, A. N., Vilk, Y., Weber, J., Schmedt auf der Günne, J., Vignolini, S., Tiemann, M., Fattakhova-Rohlfing, D., & Bein, T. (2020). Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing. ACS Applied Materials & Interfaces, 12639–12647. https://doi.org/10.1021/acsami.9b11891","chicago":"Ivanova, Alesja, Bruno Frka-Petesic, Andrej Paul, Thorsten Wagner, Askhat N. Jumabekov, Yury Vilk, Johannes Weber, et al. “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing.” ACS Applied Materials & Interfaces, 2020, 12639–47. https://doi.org/10.1021/acsami.9b11891."},"type":"journal_article","doi":"10.1021/acsami.9b11891","_id":"25903","date_updated":"2023-03-08T08:23:16Z","date_created":"2021-10-08T10:39:27Z","status":"public","publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","department":[{"_id":"35"},{"_id":"2"},{"_id":"307"}],"publication":"ACS Applied Materials & Interfaces","quality_controlled":"1","author":[{"full_name":"Ivanova, Alesja","first_name":"Alesja","last_name":"Ivanova"},{"full_name":"Frka-Petesic, Bruno","first_name":"Bruno","last_name":"Frka-Petesic"},{"first_name":"Andrej","full_name":"Paul, Andrej","last_name":"Paul"},{"last_name":"Wagner","full_name":"Wagner, Thorsten","first_name":"Thorsten"},{"full_name":"Jumabekov, Askhat N.","first_name":"Askhat N.","last_name":"Jumabekov"},{"last_name":"Vilk","full_name":"Vilk, Yury","first_name":"Yury"},{"full_name":"Weber, Johannes","first_name":"Johannes","last_name":"Weber"},{"first_name":"Jörn","full_name":"Schmedt auf der Günne, Jörn","last_name":"Schmedt auf der Günne"},{"full_name":"Vignolini, Silvia","first_name":"Silvia","last_name":"Vignolini"},{"last_name":"Tiemann","id":"23547","first_name":"Michael","full_name":"Tiemann, Michael","orcid":"0000-0003-1711-2722"},{"first_name":"Dina","full_name":"Fattakhova-Rohlfing, Dina","last_name":"Fattakhova-Rohlfing"},{"last_name":"Bein","first_name":"Thomas","full_name":"Bein, Thomas"}],"user_id":"23547","title":"Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing","abstract":[{"text":"Porous tin dioxide is an important low-cost semiconductor applied in electronics, gas sensors, and biosensors. Here, we present a versatile template-assisted synthesis of nanostructured tin dioxide thin films using cellulose nanocrystals (CNCs). We demonstrate that the structural features of CNC-templated tin dioxide films strongly depend on the precursor composition. The precursor properties were studied by using low-temperature nuclear magnetic resonance spectroscopy of tin tetrachloride in solution. We demonstrate that it is possible to optimize the precursor conditions to obtain homogeneous precursor mixtures and therefore highly porous thin films with pore dimensions in the range of 10–20 nm (ABET = 46–64 m2 g–1, measured on powder). Finally, by exploiting the high surface area of the material, we developed a resistive gas sensor based on CNC-templated tin dioxide. The sensor shows high sensitivity to carbon monoxide (CO) in ppm concentrations and low cross-sensitivity to humidity. Most importantly, the sensing kinetics are remarkably fast; both the response to the analyte gas and the signal decay after gas exposure occur within a few seconds, faster than in standard SnO2-based CO sensors. This is attributed to the high gas accessibility of the very thin porous film.","lang":"eng"}],"article_type":"original"},{"publication":"ACS Applied Materials & Interfaces","author":[{"first_name":"Lukas","full_name":"Mai, Lukas","last_name":"Mai"},{"full_name":"Zanders, David","first_name":"David","last_name":"Zanders"},{"last_name":"Subaşı","first_name":"Ersoy","full_name":"Subaşı, Ersoy"},{"last_name":"Ciftyurek","full_name":"Ciftyurek, Engin","first_name":"Engin"},{"last_name":"Hoppe","id":"27401","first_name":"Christian","full_name":"Hoppe, Christian"},{"last_name":"Rogalla","full_name":"Rogalla, Detlef","first_name":"Detlef"},{"last_name":"Gilbert","first_name":"Wolfram","full_name":"Gilbert, Wolfram"},{"last_name":"Arcos","full_name":"Arcos, Teresa de los","first_name":"Teresa de los"},{"last_name":"Schierbaum","full_name":"Schierbaum, Klaus","first_name":"Klaus"},{"last_name":"Grundmeier","id":"194","first_name":"Guido","full_name":"Grundmeier, Guido"},{"last_name":"Bock","full_name":"Bock, Claudia","first_name":"Claudia"},{"full_name":"Devi, Anjana","first_name":"Anjana","last_name":"Devi"}],"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_created":"2021-07-27T14:11:16Z","status":"public","title":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","user_id":"194","page":"3169-3180","year":"2019","type":"journal_article","citation":{"apa":"Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., … Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180. https://doi.org/10.1021/acsami.8b16443","ama":"Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces. 2019:3169-3180. doi:10.1021/acsami.8b16443","chicago":"Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe, Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.","mla":"Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, pp. 3169–80, doi:10.1021/acsami.8b16443.","bibtex":"@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_Arcos_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and Gilbert, Wolfram and Arcos, Teresa de los and Schierbaum, Klaus and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }","short":"L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert, T. de los Arcos, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS Applied Materials & Interfaces (2019) 3169–3180.","ieee":"L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces, pp. 3169–3180, 2019."},"language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:55:42Z","_id":"22833","doi":"10.1021/acsami.8b16443"},{"doi":"10.1021/acsami.9b02158","_id":"15726","date_updated":"2022-07-21T09:41:18Z","language":[{"iso":"eng"}],"page":"14821-14829","year":"2019","type":"journal_article","citation":{"short":"M. Chugh, T. Kühne, S.H. Mirhosseini, ACS Applied Materials & Interfaces (2019) 14821–14829.","ieee":"M. Chugh, T. Kühne, and S. H. Mirhosseini, “Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries,” ACS Applied Materials & Interfaces, pp. 14821–14829, 2019, doi: 10.1021/acsami.9b02158.","ama":"Chugh M, Kühne T, Mirhosseini SH. Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries. ACS Applied Materials & Interfaces. Published online 2019:14821-14829. doi:10.1021/acsami.9b02158","apa":"Chugh, M., Kühne, T., & Mirhosseini, S. H. (2019). Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries. ACS Applied Materials & Interfaces, 14821–14829. https://doi.org/10.1021/acsami.9b02158","chicago":"Chugh, Manjusha, Thomas Kühne, and S. Hossein Mirhosseini. “Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries.” ACS Applied Materials & Interfaces, 2019, 14821–29. https://doi.org/10.1021/acsami.9b02158.","mla":"Chugh, Manjusha, et al. “Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries.” ACS Applied Materials & Interfaces, 2019, pp. 14821–29, doi:10.1021/acsami.9b02158.","bibtex":"@article{Chugh_Kühne_Mirhosseini_2019, title={Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries}, DOI={10.1021/acsami.9b02158}, journal={ACS Applied Materials & Interfaces}, author={Chugh, Manjusha and Kühne, Thomas and Mirhosseini, S. Hossein}, year={2019}, pages={14821–14829} }"},"user_id":"71051","title":"Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries","abstract":[{"lang":"eng","text":"The behavior of alkali atom point defects in polycrystalline CuInSe2 is studied. In this work, three grain boundary models, one coherent twin boundary and two twin boundaries with dislocation cores, are considered. Total energy calculations show that all alkali metals tend to segregate at the grain boundaries. In addition, the segregation of alkali atoms is more pronounced at the grain boundaries with the dislocation cores. The diffusion of alkali metals along and near grain boundaries is studied as well. The results show that the diffusion of alkali atoms in the grain boundary models is faster than within the bulk. In addition, the ion exchange between Na and Rb atoms at the grain boundaries leads to the Rb enrichment at the grain boundaries and the increase of the Na concentration in the bulk. While the effects of Na and Rb point defects on the electronic structure of the grain boundary with the anion-core dislocation are similar, Rb atoms passivate the grain boundary with the cation-core dislocation more effectively than Na. This can explain the further improvement of the solar cell performance after the RbF-postdeposition treatment."}],"article_type":"original","date_created":"2020-01-30T13:07:16Z","status":"public","publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","publication":"ACS Applied Materials & Interfaces","author":[{"first_name":"Manjusha","full_name":"Chugh, Manjusha","last_name":"Chugh"},{"first_name":"Thomas","full_name":"Kühne, Thomas","last_name":"Kühne","id":"49079"},{"orcid":"0000-0001-6179-1545","full_name":"Mirhosseini, S. Hossein","first_name":"S. Hossein","id":"71051","last_name":"Mirhosseini"}]},{"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_created":"2021-07-07T08:49:23Z","status":"public","department":[{"_id":"302"}],"publication":"ACS Applied Materials & Interfaces","author":[{"full_name":"Mai, Lukas","first_name":"Lukas","last_name":"Mai"},{"full_name":"Zanders, David","first_name":"David","last_name":"Zanders"},{"full_name":"Subaşı, Ersoy","first_name":"Ersoy","last_name":"Subaşı"},{"last_name":"Ciftyurek","first_name":"Engin","full_name":"Ciftyurek, Engin"},{"last_name":"Hoppe","full_name":"Hoppe, Christian","first_name":"Christian"},{"last_name":"Rogalla","first_name":"Detlef","full_name":"Rogalla, Detlef"},{"first_name":"Wolfram","full_name":"Gilbert, Wolfram","last_name":"Gilbert"},{"first_name":"Maria Teresa","full_name":"de los Arcos de Pedro, Maria Teresa","last_name":"de los Arcos de Pedro","id":"54556"},{"last_name":"Schierbaum","first_name":"Klaus","full_name":"Schierbaum, Klaus"},{"last_name":"Grundmeier","id":"194","first_name":"Guido","full_name":"Grundmeier, Guido"},{"last_name":"Bock","first_name":"Claudia","full_name":"Bock, Claudia"},{"first_name":"Anjana","full_name":"Devi, Anjana","last_name":"Devi"}],"title":"Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices","user_id":"54556","page":"3169-3180","type":"journal_article","citation":{"chicago":"Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe, Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.","apa":"Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., Gilbert, W., de los Arcos de Pedro, M. T., Schierbaum, K., Grundmeier, G., Bock, C., & Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180. https://doi.org/10.1021/acsami.8b16443","ama":"Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials & Interfaces. Published online 2019:3169-3180. doi:10.1021/acsami.8b16443","mla":"Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces, 2019, pp. 3169–80, doi:10.1021/acsami.8b16443.","bibtex":"@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_de los Arcos de Pedro_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and Gilbert, Wolfram and de los Arcos de Pedro, Maria Teresa and Schierbaum, Klaus and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }","short":"L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert, M.T. de los Arcos de Pedro, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS Applied Materials & Interfaces (2019) 3169–3180.","ieee":"L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces, pp. 3169–3180, 2019, doi: 10.1021/acsami.8b16443."},"year":"2019","language":[{"iso":"eng"}],"doi":"10.1021/acsami.8b16443","_id":"22545","date_updated":"2023-01-24T08:35:14Z"},{"publication":"ACS Applied Materials & Interfaces","department":[{"_id":"633"}],"author":[{"first_name":"Lin","full_name":"Chen, Lin","last_name":"Chen"},{"last_name":"Chen","full_name":"Chen, Kan-Sheng","first_name":"Kan-Sheng"},{"last_name":"Chen","full_name":"Chen, Xinjie","first_name":"Xinjie"},{"last_name":"Ramirez","first_name":"Giovanni","full_name":"Ramirez, Giovanni"},{"last_name":"Huang","first_name":"Zhennan","full_name":"Huang, Zhennan"},{"first_name":"Natalie R.","full_name":"Geise, Natalie R.","last_name":"Geise"},{"first_name":"Hans-Georg","orcid":"0000-0001-6373-0877","full_name":"Steinrück, Hans-Georg","last_name":"Steinrück","id":"84268"},{"last_name":"Fisher","full_name":"Fisher, Brandon L.","first_name":"Brandon L."},{"last_name":"Shahbazian-Yassar","full_name":"Shahbazian-Yassar, Reza","first_name":"Reza"},{"last_name":"Toney","full_name":"Toney, Michael F.","first_name":"Michael F."},{"last_name":"Hersam","first_name":"Mark C.","full_name":"Hersam, Mark C."},{"last_name":"Elam","full_name":"Elam, Jeffrey W.","first_name":"Jeffrey W."}],"publication_identifier":{"issn":["1944-8244","1944-8252"]},"volume":20,"publication_status":"published","date_created":"2021-09-01T09:47:02Z","status":"public","title":"Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes","user_id":"84268","page":"26972-26981","type":"journal_article","citation":{"apa":"Chen, L., Chen, K.-S., Chen, X., Ramirez, G., Huang, Z., Geise, N. R., Steinrück, H.-G., Fisher, B. L., Shahbazian-Yassar, R., Toney, M. F., Hersam, M. C., & Elam, J. W. (2018). Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes. ACS Applied Materials & Interfaces, 20, 26972–26981. https://doi.org/10.1021/acsami.8b04573","ama":"Chen L, Chen K-S, Chen X, et al. Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes. ACS Applied Materials & Interfaces. 2018;20:26972-26981. doi:10.1021/acsami.8b04573","chicago":"Chen, Lin, Kan-Sheng Chen, Xinjie Chen, Giovanni Ramirez, Zhennan Huang, Natalie R. Geise, Hans-Georg Steinrück, et al. “Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes.” ACS Applied Materials & Interfaces 20 (2018): 26972–81. https://doi.org/10.1021/acsami.8b04573.","bibtex":"@article{Chen_Chen_Chen_Ramirez_Huang_Geise_Steinrück_Fisher_Shahbazian-Yassar_Toney_et al._2018, title={Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes}, volume={20}, DOI={10.1021/acsami.8b04573}, journal={ACS Applied Materials & Interfaces}, author={Chen, Lin and Chen, Kan-Sheng and Chen, Xinjie and Ramirez, Giovanni and Huang, Zhennan and Geise, Natalie R. and Steinrück, Hans-Georg and Fisher, Brandon L. and Shahbazian-Yassar, Reza and Toney, Michael F. and et al.}, year={2018}, pages={26972–26981} }","mla":"Chen, Lin, et al. “Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes.” ACS Applied Materials & Interfaces, vol. 20, 2018, pp. 26972–81, doi:10.1021/acsami.8b04573.","short":"L. Chen, K.-S. Chen, X. Chen, G. Ramirez, Z. Huang, N.R. Geise, H.-G. Steinrück, B.L. Fisher, R. Shahbazian-Yassar, M.F. Toney, M.C. Hersam, J.W. Elam, ACS Applied Materials & Interfaces 20 (2018) 26972–26981.","ieee":"L. Chen et al., “Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes,” ACS Applied Materials & Interfaces, vol. 20, pp. 26972–26981, 2018, doi: 10.1021/acsami.8b04573."},"year":"2018","language":[{"iso":"eng"}],"date_updated":"2022-01-06T06:55:57Z","_id":"23623","intvolume":" 20","doi":"10.1021/acsami.8b04573"},{"page":"44844-44853","citation":{"ieee":"C. Kielar, S. Ramakrishnan, S. Fricke, G. Grundmeier, and A. Keller, “Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces,” ACS Applied Materials & Interfaces, vol. 10, pp. 44844–44853, 2018.","short":"C. Kielar, S. Ramakrishnan, S. Fricke, G. Grundmeier, A. Keller, ACS Applied Materials & Interfaces 10 (2018) 44844–44853.","bibtex":"@article{Kielar_Ramakrishnan_Fricke_Grundmeier_Keller_2018, title={Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces}, volume={10}, DOI={10.1021/acsami.8b16047}, journal={ACS Applied Materials & Interfaces}, author={Kielar, Charlotte and Ramakrishnan, Saminathan and Fricke, Sebastian and Grundmeier, Guido and Keller, Adrian}, year={2018}, pages={44844–44853} }","mla":"Kielar, Charlotte, et al. “Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces.” ACS Applied Materials & Interfaces, vol. 10, 2018, pp. 44844–53, doi:10.1021/acsami.8b16047.","chicago":"Kielar, Charlotte, Saminathan Ramakrishnan, Sebastian Fricke, Guido Grundmeier, and Adrian Keller. “Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces.” ACS Applied Materials & Interfaces 10 (2018): 44844–53. https://doi.org/10.1021/acsami.8b16047.","ama":"Kielar C, Ramakrishnan S, Fricke S, Grundmeier G, Keller A. Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces. ACS Applied Materials & Interfaces. 2018;10:44844-44853. doi:10.1021/acsami.8b16047","apa":"Kielar, C., Ramakrishnan, S., Fricke, S., Grundmeier, G., & Keller, A. (2018). Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces. ACS Applied Materials & Interfaces, 10, 44844–44853. https://doi.org/10.1021/acsami.8b16047"},"type":"journal_article","year":"2018","language":[{"iso":"eng"}],"doi":"10.1021/acsami.8b16047","date_updated":"2022-01-06T06:55:38Z","_id":"22658","intvolume":" 10","publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","volume":10,"date_created":"2021-07-08T12:18:33Z","status":"public","department":[{"_id":"302"}],"publication":"ACS Applied Materials & Interfaces","author":[{"last_name":"Kielar","first_name":"Charlotte","full_name":"Kielar, Charlotte"},{"full_name":"Ramakrishnan, Saminathan","first_name":"Saminathan","last_name":"Ramakrishnan"},{"last_name":"Fricke","full_name":"Fricke, Sebastian","first_name":"Sebastian"},{"last_name":"Grundmeier","id":"194","first_name":"Guido","full_name":"Grundmeier, Guido"},{"id":"48864","last_name":"Keller","full_name":"Keller, Adrian","orcid":"0000-0001-7139-3110","first_name":"Adrian"}],"title":"Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces","user_id":"48864"},{"doi":"10.1021/acsami.7b14916","_id":"22550","date_updated":"2023-01-24T08:38:00Z","page":"7422-7434","type":"journal_article","year":"2018","citation":{"ieee":"M. Gebhard et al., “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads,” ACS Applied Materials & Interfaces, pp. 7422–7434, 2018, doi: 10.1021/acsami.7b14916.","short":"M. Gebhard, L. Mai, L. Banko, F. Mitschker, C. Hoppe, M. Jaritz, D. Kirchheim, C. Zekorn, M.T. de los Arcos de Pedro, D. Grochla, R. Dahlmann, G. Grundmeier, P. Awakowicz, A. Ludwig, A. Devi, ACS Applied Materials & Interfaces (2018) 7422–7434.","mla":"Gebhard, Maximilian, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces, 2018, pp. 7422–34, doi:10.1021/acsami.7b14916.","bibtex":"@article{Gebhard_Mai_Banko_Mitschker_Hoppe_Jaritz_Kirchheim_Zekorn_de los Arcos de Pedro_Grochla_et al._2018, title={PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads}, DOI={10.1021/acsami.7b14916}, journal={ACS Applied Materials & Interfaces}, author={Gebhard, Maximilian and Mai, Lukas and Banko, Lars and Mitschker, Felix and Hoppe, Christian and Jaritz, Montgomery and Kirchheim, Dennis and Zekorn, Christoph and de los Arcos de Pedro, Maria Teresa and Grochla, Dario and et al.}, year={2018}, pages={7422–7434} }","apa":"Gebhard, M., Mai, L., Banko, L., Mitschker, F., Hoppe, C., Jaritz, M., Kirchheim, D., Zekorn, C., de los Arcos de Pedro, M. T., Grochla, D., Dahlmann, R., Grundmeier, G., Awakowicz, P., Ludwig, A., & Devi, A. (2018). PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces, 7422–7434. https://doi.org/10.1021/acsami.7b14916","ama":"Gebhard M, Mai L, Banko L, et al. PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces. Published online 2018:7422-7434. doi:10.1021/acsami.7b14916","chicago":"Gebhard, Maximilian, Lukas Mai, Lars Banko, Felix Mitschker, Christian Hoppe, Montgomery Jaritz, Dennis Kirchheim, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces, 2018, 7422–34. https://doi.org/10.1021/acsami.7b14916."},"language":[{"iso":"eng"}],"title":"PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads","user_id":"54556","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_created":"2021-07-07T08:59:20Z","status":"public","publication":"ACS Applied Materials & Interfaces","department":[{"_id":"302"}],"author":[{"last_name":"Gebhard","first_name":"Maximilian","full_name":"Gebhard, Maximilian"},{"first_name":"Lukas","full_name":"Mai, Lukas","last_name":"Mai"},{"first_name":"Lars","full_name":"Banko, Lars","last_name":"Banko"},{"first_name":"Felix","full_name":"Mitschker, Felix","last_name":"Mitschker"},{"last_name":"Hoppe","full_name":"Hoppe, Christian","first_name":"Christian"},{"last_name":"Jaritz","first_name":"Montgomery","full_name":"Jaritz, Montgomery"},{"last_name":"Kirchheim","full_name":"Kirchheim, Dennis","first_name":"Dennis"},{"last_name":"Zekorn","first_name":"Christoph","full_name":"Zekorn, Christoph"},{"id":"54556","last_name":"de los Arcos de Pedro","full_name":"de los Arcos de Pedro, Maria Teresa","first_name":"Maria Teresa"},{"full_name":"Grochla, Dario","first_name":"Dario","last_name":"Grochla"},{"last_name":"Dahlmann","first_name":"Rainer","full_name":"Dahlmann, Rainer"},{"full_name":"Grundmeier, Guido","first_name":"Guido","id":"194","last_name":"Grundmeier"},{"last_name":"Awakowicz","first_name":"Peter","full_name":"Awakowicz, Peter"},{"full_name":"Ludwig, Alfred","first_name":"Alfred","last_name":"Ludwig"},{"last_name":"Devi","first_name":"Anjana","full_name":"Devi, Anjana"}]},{"date_updated":"2023-01-24T08:37:41Z","_id":"22549","doi":"10.1021/acsami.7b14916","language":[{"iso":"eng"}],"page":"7422-7434","year":"2018","type":"journal_article","citation":{"short":"M. Gebhard, L. Mai, L. Banko, F. Mitschker, C. Hoppe, M. Jaritz, D. Kirchheim, C. Zekorn, M.T. de los Arcos de Pedro, D. Grochla, R. Dahlmann, G. Grundmeier, P. Awakowicz, A. Ludwig, A. Devi, ACS Applied Materials & Interfaces (2018) 7422–7434.","ieee":"M. Gebhard et al., “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads,” ACS Applied Materials & Interfaces, pp. 7422–7434, 2018, doi: 10.1021/acsami.7b14916.","chicago":"Gebhard, Maximilian, Lukas Mai, Lars Banko, Felix Mitschker, Christian Hoppe, Montgomery Jaritz, Dennis Kirchheim, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces, 2018, 7422–34. https://doi.org/10.1021/acsami.7b14916.","ama":"Gebhard M, Mai L, Banko L, et al. PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces. Published online 2018:7422-7434. doi:10.1021/acsami.7b14916","apa":"Gebhard, M., Mai, L., Banko, L., Mitschker, F., Hoppe, C., Jaritz, M., Kirchheim, D., Zekorn, C., de los Arcos de Pedro, M. T., Grochla, D., Dahlmann, R., Grundmeier, G., Awakowicz, P., Ludwig, A., & Devi, A. (2018). PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces, 7422–7434. https://doi.org/10.1021/acsami.7b14916","bibtex":"@article{Gebhard_Mai_Banko_Mitschker_Hoppe_Jaritz_Kirchheim_Zekorn_de los Arcos de Pedro_Grochla_et al._2018, title={PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads}, DOI={10.1021/acsami.7b14916}, journal={ACS Applied Materials & Interfaces}, author={Gebhard, Maximilian and Mai, Lukas and Banko, Lars and Mitschker, Felix and Hoppe, Christian and Jaritz, Montgomery and Kirchheim, Dennis and Zekorn, Christoph and de los Arcos de Pedro, Maria Teresa and Grochla, Dario and et al.}, year={2018}, pages={7422–7434} }","mla":"Gebhard, Maximilian, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces, 2018, pp. 7422–34, doi:10.1021/acsami.7b14916."},"user_id":"54556","title":"PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads","publication":"ACS Applied Materials & Interfaces","department":[{"_id":"302"}],"author":[{"full_name":"Gebhard, Maximilian","first_name":"Maximilian","last_name":"Gebhard"},{"full_name":"Mai, Lukas","first_name":"Lukas","last_name":"Mai"},{"full_name":"Banko, Lars","first_name":"Lars","last_name":"Banko"},{"last_name":"Mitschker","first_name":"Felix","full_name":"Mitschker, Felix"},{"last_name":"Hoppe","first_name":"Christian","full_name":"Hoppe, Christian"},{"full_name":"Jaritz, Montgomery","first_name":"Montgomery","last_name":"Jaritz"},{"full_name":"Kirchheim, Dennis","first_name":"Dennis","last_name":"Kirchheim"},{"full_name":"Zekorn, Christoph","first_name":"Christoph","last_name":"Zekorn"},{"full_name":"de los Arcos de Pedro, Maria Teresa","first_name":"Maria Teresa","id":"54556","last_name":"de los Arcos de Pedro"},{"full_name":"Grochla, Dario","first_name":"Dario","last_name":"Grochla"},{"full_name":"Dahlmann, Rainer","first_name":"Rainer","last_name":"Dahlmann"},{"full_name":"Grundmeier, Guido","first_name":"Guido","id":"194","last_name":"Grundmeier"},{"first_name":"Peter","full_name":"Awakowicz, Peter","last_name":"Awakowicz"},{"last_name":"Ludwig","first_name":"Alfred","full_name":"Ludwig, Alfred"},{"full_name":"Devi, Anjana","first_name":"Anjana","last_name":"Devi"}],"date_created":"2021-07-07T08:59:10Z","status":"public","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]}},{"language":[{"iso":"eng"}],"year":"2018","type":"journal_article","citation":{"bibtex":"@article{Gebhard_Mai_Banko_Mitschker_Hoppe_Jaritz_Kirchheim_Zekorn_de los Arcos de Pedro_Grochla_et al._2018, title={PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads}, DOI={10.1021/acsami.7b14916}, journal={ACS Applied Materials & Interfaces}, author={Gebhard, Maximilian and Mai, Lukas and Banko, Lars and Mitschker, Felix and Hoppe, Christian and Jaritz, Montgomery and Kirchheim, Dennis and Zekorn, Christoph and de los Arcos de Pedro, Maria Teresa and Grochla, Dario and et al.}, year={2018}, pages={7422–7434} }","mla":"Gebhard, Maximilian, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces, 2018, pp. 7422–34, doi:10.1021/acsami.7b14916.","chicago":"Gebhard, Maximilian, Lukas Mai, Lars Banko, Felix Mitschker, Christian Hoppe, Montgomery Jaritz, Dennis Kirchheim, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces, 2018, 7422–34. https://doi.org/10.1021/acsami.7b14916.","apa":"Gebhard, M., Mai, L., Banko, L., Mitschker, F., Hoppe, C., Jaritz, M., Kirchheim, D., Zekorn, C., de los Arcos de Pedro, M. T., Grochla, D., Dahlmann, R., Grundmeier, G., Awakowicz, P., Ludwig, A., & Devi, A. (2018). PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces, 7422–7434. https://doi.org/10.1021/acsami.7b14916","ama":"Gebhard M, Mai L, Banko L, et al. PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces. Published online 2018:7422-7434. doi:10.1021/acsami.7b14916","ieee":"M. Gebhard et al., “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads,” ACS Applied Materials & Interfaces, pp. 7422–7434, 2018, doi: 10.1021/acsami.7b14916.","short":"M. Gebhard, L. Mai, L. Banko, F. Mitschker, C. Hoppe, M. Jaritz, D. Kirchheim, C. Zekorn, M.T. de los Arcos de Pedro, D. Grochla, R. Dahlmann, G. Grundmeier, P. Awakowicz, A. Ludwig, A. Devi, ACS Applied Materials & Interfaces (2018) 7422–7434."},"page":"7422-7434","doi":"10.1021/acsami.7b14916","date_updated":"2023-01-24T08:38:19Z","_id":"22551","status":"public","date_created":"2021-07-07T08:59:35Z","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"author":[{"last_name":"Gebhard","full_name":"Gebhard, Maximilian","first_name":"Maximilian"},{"last_name":"Mai","full_name":"Mai, Lukas","first_name":"Lukas"},{"last_name":"Banko","full_name":"Banko, Lars","first_name":"Lars"},{"last_name":"Mitschker","first_name":"Felix","full_name":"Mitschker, Felix"},{"full_name":"Hoppe, Christian","first_name":"Christian","last_name":"Hoppe"},{"last_name":"Jaritz","first_name":"Montgomery","full_name":"Jaritz, Montgomery"},{"full_name":"Kirchheim, Dennis","first_name":"Dennis","last_name":"Kirchheim"},{"last_name":"Zekorn","full_name":"Zekorn, Christoph","first_name":"Christoph"},{"last_name":"de los Arcos de Pedro","id":"54556","first_name":"Maria Teresa","full_name":"de los Arcos de Pedro, Maria Teresa"},{"last_name":"Grochla","full_name":"Grochla, Dario","first_name":"Dario"},{"last_name":"Dahlmann","full_name":"Dahlmann, Rainer","first_name":"Rainer"},{"id":"194","last_name":"Grundmeier","full_name":"Grundmeier, Guido","first_name":"Guido"},{"first_name":"Peter","full_name":"Awakowicz, Peter","last_name":"Awakowicz"},{"last_name":"Ludwig","full_name":"Ludwig, Alfred","first_name":"Alfred"},{"last_name":"Devi","first_name":"Anjana","full_name":"Devi, Anjana"}],"publication":"ACS Applied Materials & Interfaces","department":[{"_id":"302"}],"user_id":"54556","title":"PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads"},{"title":"Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence","user_id":"55706","publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"volume":9,"status":"public","date_created":"2018-08-21T11:45:23Z","author":[{"last_name":"Rieger","full_name":"Rieger, Torsten","first_name":"Torsten"},{"first_name":"Thomas","full_name":"Riedl, Thomas","last_name":"Riedl","id":"36950"},{"last_name":"Neumann","full_name":"Neumann, Elmar","first_name":"Elmar"},{"full_name":"Grützmacher, Detlev","first_name":"Detlev","last_name":"Grützmacher"},{"last_name":"Lindner","id":"20797","first_name":"Jörg","full_name":"Lindner, Jörg"},{"last_name":"Pawlis","first_name":"Alexander","full_name":"Pawlis, Alexander"}],"publisher":"American Chemical Society (ACS)","publication":"ACS Applied Materials & Interfaces","department":[{"_id":"286"},{"_id":"15"}],"doi":"10.1021/acsami.6b15824","issue":"9","_id":"3992","date_updated":"2022-01-06T07:00:05Z","intvolume":" 9","year":"2017","type":"journal_article","citation":{"ieee":"T. Rieger, T. Riedl, E. Neumann, D. Grützmacher, J. Lindner, and A. Pawlis, “Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence,” ACS Applied Materials & Interfaces, vol. 9, no. 9, pp. 8371–8377, 2017.","short":"T. Rieger, T. Riedl, E. Neumann, D. Grützmacher, J. Lindner, A. Pawlis, ACS Applied Materials & Interfaces 9 (2017) 8371–8377.","mla":"Rieger, Torsten, et al. “Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence.” ACS Applied Materials & Interfaces, vol. 9, no. 9, American Chemical Society (ACS), 2017, pp. 8371–77, doi:10.1021/acsami.6b15824.","bibtex":"@article{Rieger_Riedl_Neumann_Grützmacher_Lindner_Pawlis_2017, title={Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence}, volume={9}, DOI={10.1021/acsami.6b15824}, number={9}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Rieger, Torsten and Riedl, Thomas and Neumann, Elmar and Grützmacher, Detlev and Lindner, Jörg and Pawlis, Alexander}, year={2017}, pages={8371–8377} }","ama":"Rieger T, Riedl T, Neumann E, Grützmacher D, Lindner J, Pawlis A. Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence. ACS Applied Materials & Interfaces. 2017;9(9):8371-8377. doi:10.1021/acsami.6b15824","apa":"Rieger, T., Riedl, T., Neumann, E., Grützmacher, D., Lindner, J., & Pawlis, A. (2017). Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence. ACS Applied Materials & Interfaces, 9(9), 8371–8377. https://doi.org/10.1021/acsami.6b15824","chicago":"Rieger, Torsten, Thomas Riedl, Elmar Neumann, Detlev Grützmacher, Jörg Lindner, and Alexander Pawlis. “Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence.” ACS Applied Materials & Interfaces 9, no. 9 (2017): 8371–77. https://doi.org/10.1021/acsami.6b15824."},"page":"8371-8377"},{"issue":"3","_id":"46006","intvolume":" 10","page":"2716-2724","year":"2017","type":"journal_article","citation":{"short":"T. Wan, Y. Pan, H. Du, B. Qu, J. Yi, D. Chu, ACS Applied Materials & Interfaces 10 (2017) 2716–2724.","ieee":"T. Wan, Y. Pan, H. Du, B. Qu, J. Yi, and D. Chu, “Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks,” ACS Applied Materials & Interfaces, vol. 10, no. 3, pp. 2716–2724, 2017, doi: 10.1021/acsami.7b16142.","apa":"Wan, T., Pan, Y., Du, H., Qu, B., Yi, J., & Chu, D. (2017). Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks. ACS Applied Materials & Interfaces, 10(3), 2716–2724. https://doi.org/10.1021/acsami.7b16142","ama":"Wan T, Pan Y, Du H, Qu B, Yi J, Chu D. Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks. ACS Applied Materials & Interfaces. 2017;10(3):2716-2724. doi:10.1021/acsami.7b16142","chicago":"Wan, Tao, Ying Pan, Haiwei Du, Bo Qu, Jiabao Yi, and Dewei Chu. “Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks.” ACS Applied Materials & Interfaces 10, no. 3 (2017): 2716–24. https://doi.org/10.1021/acsami.7b16142.","bibtex":"@article{Wan_Pan_Du_Qu_Yi_Chu_2017, title={Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks}, volume={10}, DOI={10.1021/acsami.7b16142}, number={3}, journal={ACS Applied Materials & Interfaces}, publisher={American Chemical Society (ACS)}, author={Wan, Tao and Pan, Ying and Du, Haiwei and Qu, Bo and Yi, Jiabao and Chu, Dewei}, year={2017}, pages={2716–2724} }","mla":"Wan, Tao, et al. “Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks.” ACS Applied Materials & Interfaces, vol. 10, no. 3, American Chemical Society (ACS), 2017, pp. 2716–24, doi:10.1021/acsami.7b16142."},"user_id":"100383","extern":"1","date_created":"2023-07-11T14:48:55Z","status":"public","volume":10,"keyword":["General Materials Science"],"publication":"ACS Applied Materials & Interfaces","author":[{"last_name":"Wan","first_name":"Tao","full_name":"Wan, Tao"},{"first_name":"Ying","full_name":"Pan, Ying","last_name":"Pan","id":"100383"},{"full_name":"Du, Haiwei","first_name":"Haiwei","last_name":"Du"},{"last_name":"Qu","first_name":"Bo","full_name":"Qu, Bo"},{"last_name":"Yi","first_name":"Jiabao","full_name":"Yi, Jiabao"},{"last_name":"Chu","first_name":"Dewei","full_name":"Chu, Dewei"}],"publisher":"American Chemical Society (ACS)","doi":"10.1021/acsami.7b16142","date_updated":"2023-07-11T16:41:21Z","language":[{"iso":"eng"}],"title":"Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire Networks","publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published"},{"user_id":"48864","title":"Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks","status":"public","date_created":"2021-07-08T12:47:25Z","volume":8,"publication_identifier":{"issn":["1944-8244","1944-8252"]},"publication_status":"published","author":[{"full_name":"Ramakrishnan, Saminathan","first_name":"Saminathan","last_name":"Ramakrishnan"},{"first_name":"Sivaraman","full_name":"Subramaniam, Sivaraman","last_name":"Subramaniam"},{"first_name":"A. Francis","full_name":"Stewart, A. Francis","last_name":"Stewart"},{"full_name":"Grundmeier, Guido","first_name":"Guido","id":"194","last_name":"Grundmeier"},{"first_name":"Adrian","orcid":"0000-0001-7139-3110","full_name":"Keller, Adrian","last_name":"Keller","id":"48864"}],"publication":"ACS Applied Materials & Interfaces","department":[{"_id":"302"}],"doi":"10.1021/acsami.6b10535","_id":"22672","intvolume":" 8","date_updated":"2022-01-06T06:55:38Z","language":[{"iso":"eng"}],"citation":{"ieee":"S. Ramakrishnan, S. Subramaniam, A. F. Stewart, G. Grundmeier, and A. Keller, “Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks,” ACS Applied Materials & Interfaces, vol. 8, pp. 31239–31247, 2016.","short":"S. Ramakrishnan, S. Subramaniam, A.F. Stewart, G. Grundmeier, A. Keller, ACS Applied Materials & Interfaces 8 (2016) 31239–31247.","mla":"Ramakrishnan, Saminathan, et al. “Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks.” ACS Applied Materials & Interfaces, vol. 8, 2016, pp. 31239–47, doi:10.1021/acsami.6b10535.","bibtex":"@article{Ramakrishnan_Subramaniam_Stewart_Grundmeier_Keller_2016, title={Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks}, volume={8}, DOI={10.1021/acsami.6b10535}, journal={ACS Applied Materials & Interfaces}, author={Ramakrishnan, Saminathan and Subramaniam, Sivaraman and Stewart, A. Francis and Grundmeier, Guido and Keller, Adrian}, year={2016}, pages={31239–31247} }","ama":"Ramakrishnan S, Subramaniam S, Stewart AF, Grundmeier G, Keller A. Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks. ACS Applied Materials & Interfaces. 2016;8:31239-31247. doi:10.1021/acsami.6b10535","apa":"Ramakrishnan, S., Subramaniam, S., Stewart, A. F., Grundmeier, G., & Keller, A. (2016). Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks. ACS Applied Materials & Interfaces, 8, 31239–31247. https://doi.org/10.1021/acsami.6b10535","chicago":"Ramakrishnan, Saminathan, Sivaraman Subramaniam, A. Francis Stewart, Guido Grundmeier, and Adrian Keller. “Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA Origami Masks.” ACS Applied Materials & Interfaces 8 (2016): 31239–47. https://doi.org/10.1021/acsami.6b10535."},"type":"journal_article","year":"2016","page":"31239-31247"},{"volume":8,"publication_status":"published","publication_identifier":{"issn":["1944-8244","1944-8252"]},"date_created":"2021-07-08T12:51:40Z","status":"public","publication":"ACS Applied Materials & Interfaces","department":[{"_id":"302"}],"author":[{"full_name":"Böke, Frederik","first_name":"Frederik","last_name":"Böke"},{"last_name":"Giner","full_name":"Giner, Ignacio","first_name":"Ignacio"},{"id":"48864","last_name":"Keller","orcid":"0000-0001-7139-3110","full_name":"Keller, Adrian","first_name":"Adrian"},{"full_name":"Grundmeier, Guido","first_name":"Guido","id":"194","last_name":"Grundmeier"},{"last_name":"Fischer","first_name":"Horst","full_name":"Fischer, Horst"}],"title":"Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD)","user_id":"48864","page":"17805-17816","year":"2016","citation":{"ieee":"F. Böke, I. Giner, A. Keller, G. Grundmeier, and H. Fischer, “Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD),” ACS Applied Materials & Interfaces, vol. 8, pp. 17805–17816, 2016.","short":"F. Böke, I. Giner, A. Keller, G. Grundmeier, H. Fischer, ACS Applied Materials & Interfaces 8 (2016) 17805–17816.","mla":"Böke, Frederik, et al. “Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) Yields Better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics Compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).” ACS Applied Materials & Interfaces, vol. 8, 2016, pp. 17805–16, doi:10.1021/acsami.6b04421.","bibtex":"@article{Böke_Giner_Keller_Grundmeier_Fischer_2016, title={Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD)}, volume={8}, DOI={10.1021/acsami.6b04421}, journal={ACS Applied Materials & Interfaces}, author={Böke, Frederik and Giner, Ignacio and Keller, Adrian and Grundmeier, Guido and Fischer, Horst}, year={2016}, pages={17805–17816} }","ama":"Böke F, Giner I, Keller A, Grundmeier G, Fischer H. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD). ACS Applied Materials & Interfaces. 2016;8:17805-17816. doi:10.1021/acsami.6b04421","apa":"Böke, F., Giner, I., Keller, A., Grundmeier, G., & Fischer, H. (2016). Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD). ACS Applied Materials & Interfaces, 8, 17805–17816. https://doi.org/10.1021/acsami.6b04421","chicago":"Böke, Frederik, Ignacio Giner, Adrian Keller, Guido Grundmeier, and Horst Fischer. “Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) Yields Better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics Compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).” ACS Applied Materials & Interfaces 8 (2016): 17805–16. https://doi.org/10.1021/acsami.6b04421."},"type":"journal_article","language":[{"iso":"eng"}],"doi":"10.1021/acsami.6b04421","date_updated":"2022-01-06T06:55:38Z","_id":"22675","intvolume":" 8"}]