---
_id: '62798'
abstract:
- lang: eng
text: We investigated electrodeposited nanoparticulate nickel selenide (pre)catalysts
that transform into nickel oxides/oxyhydroxides under oxygen evolution reaction
conditions in alkaline solutions. Previous studies of this transformation were
conducted at lower current densities than those of industrial relevance (≥1 A
cm–2). We used ultramicroelectrodes (UMEs) to achieve such current densities,
benefiting from their small size, ensuring low absolute currents and low ohmic
drop but high current densities. Morphological degradation of the catalyst material
was only observed at current densities exceeding 1 A cm–2 but not for smaller
ones. Using X-ray absorption, X-ray photoemission spectroscopy, and X-ray diffraction,
we confirmed that the degradation was accompanied by the literature-known transformation
of nanoparticulate Ni3Se2 (bulk)/NiSe (surface) into nickel oxyhydroxide. The
transformation of the precatalyst goes along with a significant improvement in
the charge transfer kinetics observed by decreasing Tafel slopes with ongoing
experimental time extracted from cyclic voltammetry (CV) experiments and electrochemical
impedance spectroscopy (EIS) in the high-frequency range. However, these kinetic
improvements are accompanied by limitations in mass transport concluded from decreasing
current responses at high overpotentials in CVs and increasing impedance in the
low-frequency range of the EIS spectra after extended CV cycling. These mass transport
limitations originated from morphological degradations at the UME exceeding 1
A cm–2 which we proved by applying identical location scanning electron microscopy.
This has not been reported in studies that have been limited to lower current
densities before. Our findings showcase how UMEs can be used to study (pre)catalysts
(herein nickel selenides) under current densities of industrial relevance in the
absence of ohmic drop-related ambiguities, combined with in-depth materials characterization
studies, e.g., identical location microscopy and advanced spectroscopic methods.
This approach enables direct evaluation and comparison of catalyst materials and
thus demonstrates how to overcome long-standing limitations of electrocatalyst
design and testing.
article_type: original
author:
- first_name: Felix
full_name: Hiege, Felix
last_name: Hiege
- first_name: Chun-Wai
full_name: Chang, Chun-Wai
last_name: Chang
- first_name: Oliver
full_name: Trost, Oliver
last_name: Trost
- first_name: Charlotte E. R.
full_name: van Halteren, Charlotte E. R.
last_name: van Halteren
- first_name: Pouya
full_name: Hosseini, Pouya
last_name: Hosseini
- first_name: Georg
full_name: Bendt, Georg
last_name: Bendt
- first_name: Stephan
full_name: Schulz, Stephan
last_name: Schulz
- first_name: Zhenxing
full_name: Feng, Zhenxing
last_name: Feng
- first_name: Julia
full_name: Linnemann, Julia
id: '116779'
last_name: Linnemann
orcid: 0000-0001-6883-5424
- first_name: Kristina
full_name: Tschulik, Kristina
last_name: Tschulik
citation:
ama: Hiege F, Chang C-W, Trost O, et al. Morphological Degradation of Oxygen Evolution
Reaction-Electrocatalyzing Nickel Selenides at Industrially Relevant Current Densities.
ACS Applied Materials & Interfaces. 2025;17(29):41893-41903. doi:10.1021/acsami.5c05381
apa: Hiege, F., Chang, C.-W., Trost, O., van Halteren, C. E. R., Hosseini, P., Bendt,
G., Schulz, S., Feng, Z., Linnemann, J., & Tschulik, K. (2025). Morphological
Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel Selenides at
Industrially Relevant Current Densities. ACS Applied Materials & Interfaces,
17(29), 41893–41903. https://doi.org/10.1021/acsami.5c05381
bibtex: '@article{Hiege_Chang_Trost_van Halteren_Hosseini_Bendt_Schulz_Feng_Linnemann_Tschulik_2025,
title={Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing
Nickel Selenides at Industrially Relevant Current Densities}, volume={17}, DOI={10.1021/acsami.5c05381}, number={29},
journal={ACS Applied Materials & Interfaces}, publisher={American Chemical
Society (ACS)}, author={Hiege, Felix and Chang, Chun-Wai and Trost, Oliver and
van Halteren, Charlotte E. R. and Hosseini, Pouya and Bendt, Georg and Schulz,
Stephan and Feng, Zhenxing and Linnemann, Julia and Tschulik, Kristina}, year={2025},
pages={41893–41903} }'
chicago: 'Hiege, Felix, Chun-Wai Chang, Oliver Trost, Charlotte E. R. van Halteren,
Pouya Hosseini, Georg Bendt, Stephan Schulz, Zhenxing Feng, Julia Linnemann, and
Kristina Tschulik. “Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing
Nickel Selenides at Industrially Relevant Current Densities.” ACS Applied Materials
& Interfaces 17, no. 29 (2025): 41893–903. https://doi.org/10.1021/acsami.5c05381.'
ieee: 'F. Hiege et al., “Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing
Nickel Selenides at Industrially Relevant Current Densities,” ACS Applied Materials
& Interfaces, vol. 17, no. 29, pp. 41893–41903, 2025, doi: 10.1021/acsami.5c05381.'
mla: Hiege, Felix, et al. “Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing
Nickel Selenides at Industrially Relevant Current Densities.” ACS Applied Materials
& Interfaces, vol. 17, no. 29, American Chemical Society (ACS), 2025,
pp. 41893–903, doi:10.1021/acsami.5c05381.
short: F. Hiege, C.-W. Chang, O. Trost, C.E.R. van Halteren, P. Hosseini, G. Bendt,
S. Schulz, Z. Feng, J. Linnemann, K. Tschulik, ACS Applied Materials & Interfaces
17 (2025) 41893–41903.
date_created: 2025-12-03T15:08:47Z
date_updated: 2025-12-03T16:27:30Z
department:
- _id: '985'
doi: 10.1021/acsami.5c05381
extern: '1'
intvolume: ' 17'
issue: '29'
keyword:
- Electrocatalysis
- oxygen evolution reaction
- nickel selenide
- microelectrode
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://pubs.acs.org/doi/full/10.1021/acsami.5c05381
oa: '1'
page: 41893-41903
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
quality_controlled: '1'
status: public
title: Morphological Degradation of Oxygen Evolution Reaction-Electrocatalyzing Nickel
Selenides at Industrially Relevant Current Densities
type: journal_article
user_id: '116779'
volume: 17
year: '2025'
...
---
_id: '46741'
author:
- first_name: Mario Fabian
full_name: Zscherp, Mario Fabian
last_name: Zscherp
- first_name: Silas Aurel
full_name: Jentsch, Silas Aurel
last_name: Jentsch
- first_name: Marius Johannes
full_name: Müller, Marius Johannes
last_name: Müller
- first_name: Vitalii
full_name: Lider, Vitalii
last_name: Lider
- first_name: Celina
full_name: Becker, Celina
last_name: Becker
- first_name: Limei
full_name: Chen, Limei
last_name: Chen
- first_name: Mario
full_name: Littmann, Mario
last_name: Littmann
- first_name: Falco
full_name: Meier, Falco
last_name: Meier
- first_name: Andreas
full_name: Beyer, Andreas
last_name: Beyer
- first_name: Detlev Michael
full_name: Hofmann, Detlev Michael
last_name: Hofmann
- first_name: Donat Josef
full_name: As, Donat Josef
id: '14'
last_name: As
orcid: 0000-0003-1121-3565
- first_name: Peter Jens
full_name: Klar, Peter Jens
last_name: Klar
- first_name: Kerstin
full_name: Volz, Kerstin
last_name: Volz
- first_name: Sangam
full_name: Chatterjee, Sangam
last_name: Chatterjee
- first_name: Jörg
full_name: Schörmann, Jörg
last_name: Schörmann
citation:
ama: Zscherp MF, Jentsch SA, Müller MJ, et al. Overcoming the Miscibility Gap of
GaN/InN in MBE Growth of Cubic InxGa1–xN.
ACS Applied Materials & Interfaces. 2023;15(33):39513-39522. doi:10.1021/acsami.3c06319
apa: Zscherp, M. F., Jentsch, S. A., Müller, M. J., Lider, V., Becker, C., Chen,
L., Littmann, M., Meier, F., Beyer, A., Hofmann, D. M., As, D. J., Klar, P. J.,
Volz, K., Chatterjee, S., & Schörmann, J. (2023). Overcoming the Miscibility
Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.
ACS Applied Materials & Interfaces, 15(33), 39513–39522.
https://doi.org/10.1021/acsami.3c06319
bibtex: '@article{Zscherp_Jentsch_Müller_Lider_Becker_Chen_Littmann_Meier_Beyer_Hofmann_et
al._2023, title={Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic
InxGa1–xN}, volume={15}, DOI={10.1021/acsami.3c06319},
number={33}, journal={ACS Applied Materials & Interfaces}, publisher={American
Chemical Society (ACS)}, author={Zscherp, Mario Fabian and Jentsch, Silas Aurel
and Müller, Marius Johannes and Lider, Vitalii and Becker, Celina and Chen, Limei
and Littmann, Mario and Meier, Falco and Beyer, Andreas and Hofmann, Detlev Michael
and et al.}, year={2023}, pages={39513–39522} }'
chicago: 'Zscherp, Mario Fabian, Silas Aurel Jentsch, Marius Johannes Müller, Vitalii
Lider, Celina Becker, Limei Chen, Mario Littmann, et al. “Overcoming the Miscibility
Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN.”
ACS Applied Materials & Interfaces 15, no. 33 (2023): 39513–22.
https://doi.org/10.1021/acsami.3c06319.'
ieee: 'M. F. Zscherp et al., “Overcoming the Miscibility Gap of GaN/InN in
MBE Growth of Cubic InxGa1–xN,” ACS Applied
Materials & Interfaces, vol. 15, no. 33, pp. 39513–39522, 2023, doi:
10.1021/acsami.3c06319.'
mla: Zscherp, Mario Fabian, et al. “Overcoming the Miscibility Gap of GaN/InN in
MBE Growth of Cubic InxGa1–xN.” ACS Applied
Materials & Interfaces, vol. 15, no. 33, American Chemical Society
(ACS), 2023, pp. 39513–22, doi:10.1021/acsami.3c06319.
short: M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M.
Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee,
J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.
date_created: 2023-08-28T06:45:20Z
date_updated: 2023-08-28T06:46:23Z
department:
- _id: '15'
- _id: '230'
doi: 10.1021/acsami.3c06319
intvolume: ' 15'
issue: '33'
keyword:
- General Materials Science
language:
- iso: eng
page: 39513-39522
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN
type: journal_article
user_id: '42514'
volume: 15
year: '2023'
...
---
_id: '33686'
author:
- first_name: Amala
full_name: Elizabeth, Amala
last_name: Elizabeth
- first_name: Sudhir K.
full_name: Sahoo, Sudhir K.
last_name: Sahoo
- first_name: Himanshu
full_name: Phirke, Himanshu
last_name: Phirke
- first_name: Tim
full_name: Kodalle, Tim
last_name: Kodalle
- first_name: Thomas
full_name: Kühne, Thomas
id: '49079'
last_name: Kühne
- first_name: Jean-Nicolas
full_name: Audinot, Jean-Nicolas
last_name: Audinot
- first_name: Tom
full_name: Wirtz, Tom
last_name: Wirtz
- first_name: Alex
full_name: Redinger, Alex
last_name: Redinger
- first_name: Christian A.
full_name: Kaufmann, Christian A.
last_name: Kaufmann
- first_name: Hossein
full_name: Mirhosseini, Hossein
id: '71051'
last_name: Mirhosseini
orcid: 0000-0001-6179-1545
- first_name: Harry
full_name: Mönig, Harry
last_name: Mönig
citation:
ama: Elizabeth A, Sahoo SK, Phirke H, et al. Surface Passivation and Detrimental
Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell
Absorbers. ACS Applied Materials & Interfaces. 2022;14(29):34101-34112.
doi:10.1021/acsami.2c08257
apa: Elizabeth, A., Sahoo, S. K., Phirke, H., Kodalle, T., Kühne, T., Audinot, J.-N.,
Wirtz, T., Redinger, A., Kaufmann, C. A., Mirhosseini, H., & Mönig, H. (2022).
Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated
Cu(In,Ga)Se2 Solar Cell Absorbers. ACS Applied Materials &
Interfaces, 14(29), 34101–34112. https://doi.org/10.1021/acsami.2c08257
bibtex: '@article{Elizabeth_Sahoo_Phirke_Kodalle_Kühne_Audinot_Wirtz_Redinger_Kaufmann_Mirhosseini_et
al._2022, title={Surface Passivation and Detrimental Heat-Induced Diffusion Effects
in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers}, volume={14}, DOI={10.1021/acsami.2c08257}, number={29},
journal={ACS Applied Materials & Interfaces}, publisher={American Chemical
Society (ACS)}, author={Elizabeth, Amala and Sahoo, Sudhir K. and Phirke, Himanshu
and Kodalle, Tim and Kühne, Thomas and Audinot, Jean-Nicolas and Wirtz, Tom and
Redinger, Alex and Kaufmann, Christian A. and Mirhosseini, Hossein and et al.},
year={2022}, pages={34101–34112} }'
chicago: 'Elizabeth, Amala, Sudhir K. Sahoo, Himanshu Phirke, Tim Kodalle, Thomas
Kühne, Jean-Nicolas Audinot, Tom Wirtz, et al. “Surface Passivation and Detrimental
Heat-Induced Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell
Absorbers.” ACS Applied Materials & Interfaces 14, no. 29 (2022):
34101–12. https://doi.org/10.1021/acsami.2c08257.'
ieee: 'A. Elizabeth et al., “Surface Passivation and Detrimental Heat-Induced
Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers,”
ACS Applied Materials & Interfaces, vol. 14, no. 29, pp. 34101–34112,
2022, doi: 10.1021/acsami.2c08257.'
mla: Elizabeth, Amala, et al. “Surface Passivation and Detrimental Heat-Induced
Diffusion Effects in RbF-Treated Cu(In,Ga)Se2 Solar Cell Absorbers.”
ACS Applied Materials & Interfaces, vol. 14, no. 29, American Chemical
Society (ACS), 2022, pp. 34101–12, doi:10.1021/acsami.2c08257.
short: A. Elizabeth, S.K. Sahoo, H. Phirke, T. Kodalle, T. Kühne, J.-N. Audinot,
T. Wirtz, A. Redinger, C.A. Kaufmann, H. Mirhosseini, H. Mönig, ACS Applied Materials
& Interfaces 14 (2022) 34101–34112.
date_created: 2022-10-11T08:18:45Z
date_updated: 2022-10-11T08:19:07Z
department:
- _id: '613'
doi: 10.1021/acsami.2c08257
intvolume: ' 14'
issue: '29'
keyword:
- General Materials Science
language:
- iso: eng
page: 34101-34112
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Surface Passivation and Detrimental Heat-Induced Diffusion Effects in RbF-Treated
Cu(In,Ga)Se2 Solar Cell Absorbers
type: journal_article
user_id: '71051'
volume: 14
year: '2022'
...
---
_id: '37681'
author:
- first_name: Dominik Christian
full_name: Moritz, Dominik Christian
last_name: Moritz
- first_name: Isaac Azahel
full_name: Ruiz Alvarado, Isaac Azahel
id: '79462'
last_name: Ruiz Alvarado
orcid: 0000-0002-4710-1170
- first_name: Mohammad Amin
full_name: Zare Pour, Mohammad Amin
last_name: Zare Pour
- first_name: Agnieszka
full_name: Paszuk, Agnieszka
last_name: Paszuk
- first_name: Tilo
full_name: Frieß, Tilo
last_name: Frieß
- first_name: Erich
full_name: Runge, Erich
last_name: Runge
- first_name: Jan P.
full_name: Hofmann, Jan P.
last_name: Hofmann
- first_name: Thomas
full_name: Hannappel, Thomas
last_name: Hannappel
- first_name: Wolf Gero
full_name: Schmidt, Wolf Gero
id: '468'
last_name: Schmidt
orcid: 0000-0002-2717-5076
- first_name: Wolfram
full_name: Jaegermann, Wolfram
last_name: Jaegermann
citation:
ama: 'Moritz DC, Ruiz Alvarado IA, Zare Pour MA, et al. P-Terminated InP (001) Surfaces:
Surface Band Bending and Reactivity to Water. ACS Applied Materials &
Interfaces. 2022;14(41):47255-47261. doi:10.1021/acsami.2c13352'
apa: 'Moritz, D. C., Ruiz Alvarado, I. A., Zare Pour, M. A., Paszuk, A., Frieß,
T., Runge, E., Hofmann, J. P., Hannappel, T., Schmidt, W. G., & Jaegermann,
W. (2022). P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity
to Water. ACS Applied Materials & Interfaces, 14(41), 47255–47261.
https://doi.org/10.1021/acsami.2c13352'
bibtex: '@article{Moritz_Ruiz Alvarado_Zare Pour_Paszuk_Frieß_Runge_Hofmann_Hannappel_Schmidt_Jaegermann_2022,
title={P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to
Water}, volume={14}, DOI={10.1021/acsami.2c13352},
number={41}, journal={ACS Applied Materials & Interfaces}, publisher={American
Chemical Society (ACS)}, author={Moritz, Dominik Christian and Ruiz Alvarado,
Isaac Azahel and Zare Pour, Mohammad Amin and Paszuk, Agnieszka and Frieß, Tilo
and Runge, Erich and Hofmann, Jan P. and Hannappel, Thomas and Schmidt, Wolf Gero
and Jaegermann, Wolfram}, year={2022}, pages={47255–47261} }'
chicago: 'Moritz, Dominik Christian, Isaac Azahel Ruiz Alvarado, Mohammad Amin Zare
Pour, Agnieszka Paszuk, Tilo Frieß, Erich Runge, Jan P. Hofmann, Thomas Hannappel,
Wolf Gero Schmidt, and Wolfram Jaegermann. “P-Terminated InP (001) Surfaces: Surface
Band Bending and Reactivity to Water.” ACS Applied Materials & Interfaces
14, no. 41 (2022): 47255–61. https://doi.org/10.1021/acsami.2c13352.'
ieee: 'D. C. Moritz et al., “P-Terminated InP (001) Surfaces: Surface Band
Bending and Reactivity to Water,” ACS Applied Materials & Interfaces,
vol. 14, no. 41, pp. 47255–47261, 2022, doi: 10.1021/acsami.2c13352.'
mla: 'Moritz, Dominik Christian, et al. “P-Terminated InP (001) Surfaces: Surface
Band Bending and Reactivity to Water.” ACS Applied Materials & Interfaces,
vol. 14, no. 41, American Chemical Society (ACS), 2022, pp. 47255–61, doi:10.1021/acsami.2c13352.'
short: D.C. Moritz, I.A. Ruiz Alvarado, M.A. Zare Pour, A. Paszuk, T. Frieß, E.
Runge, J.P. Hofmann, T. Hannappel, W.G. Schmidt, W. Jaegermann, ACS Applied Materials
& Interfaces 14 (2022) 47255–47261.
date_created: 2023-01-20T10:02:58Z
date_updated: 2023-04-20T14:30:51Z
department:
- _id: '15'
- _id: '170'
- _id: '295'
- _id: '230'
- _id: '35'
doi: 10.1021/acsami.2c13352
intvolume: ' 14'
issue: '41'
keyword:
- General Materials Science
language:
- iso: eng
page: 47255-47261
project:
- _id: '52'
name: 'PC2: Computing Resources Provided by the Paderborn Center for Parallel Computing'
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: 'P-Terminated InP (001) Surfaces: Surface Band Bending and Reactivity to Water'
type: journal_article
user_id: '16199'
volume: 14
year: '2022'
...
---
_id: '23613'
author:
- first_name: Baolin
full_name: Zhao, Baolin
last_name: Zhao
- first_name: Bastian
full_name: Gothe, Bastian
last_name: Gothe
- first_name: Arthur
full_name: Groh, Arthur
last_name: Groh
- first_name: Thomas
full_name: Schmaltz, Thomas
last_name: Schmaltz
- first_name: Johannes
full_name: Will, Johannes
last_name: Will
- first_name: Hans-Georg
full_name: Steinrück, Hans-Georg
id: '84268'
last_name: Steinrück
orcid: 0000-0001-6373-0877
- first_name: Tobias
full_name: Unruh, Tobias
last_name: Unruh
- first_name: Stefan
full_name: Mecking, Stefan
last_name: Mecking
- first_name: Marcus
full_name: Halik, Marcus
last_name: Halik
citation:
ama: Zhao B, Gothe B, Groh A, et al. Oligothiophene Phosphonic Acids for Self-Assembled
Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces.
2021;13:32461-32466. doi:10.1021/acsami.1c05764
apa: Zhao, B., Gothe, B., Groh, A., Schmaltz, T., Will, J., Steinrück, H.-G., Unruh,
T., Mecking, S., & Halik, M. (2021). Oligothiophene Phosphonic Acids for Self-Assembled
Monolayer Field-Effect Transistors. ACS Applied Materials & Interfaces,
13, 32461–32466. https://doi.org/10.1021/acsami.1c05764
bibtex: '@article{Zhao_Gothe_Groh_Schmaltz_Will_Steinrück_Unruh_Mecking_Halik_2021,
title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect
Transistors}, volume={13}, DOI={10.1021/acsami.1c05764},
journal={ACS Applied Materials & Interfaces}, author={Zhao, Baolin and Gothe,
Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück,
Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}, year={2021},
pages={32461–32466} }'
chicago: 'Zhao, Baolin, Bastian Gothe, Arthur Groh, Thomas Schmaltz, Johannes Will,
Hans-Georg Steinrück, Tobias Unruh, Stefan Mecking, and Marcus Halik. “Oligothiophene
Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors.” ACS
Applied Materials & Interfaces 13 (2021): 32461–66. https://doi.org/10.1021/acsami.1c05764.'
ieee: 'B. Zhao et al., “Oligothiophene Phosphonic Acids for Self-Assembled
Monolayer Field-Effect Transistors,” ACS Applied Materials & Interfaces,
vol. 13, pp. 32461–32466, 2021, doi: 10.1021/acsami.1c05764.'
mla: Zhao, Baolin, et al. “Oligothiophene Phosphonic Acids for Self-Assembled Monolayer
Field-Effect Transistors.” ACS Applied Materials & Interfaces, vol.
13, 2021, pp. 32461–66, doi:10.1021/acsami.1c05764.
short: B. Zhao, B. Gothe, A. Groh, T. Schmaltz, J. Will, H.-G. Steinrück, T. Unruh,
S. Mecking, M. Halik, ACS Applied Materials & Interfaces 13 (2021) 32461–32466.
date_created: 2021-09-01T09:09:36Z
date_updated: 2022-01-06T06:55:57Z
department:
- _id: '633'
doi: 10.1021/acsami.1c05764
intvolume: ' 13'
language:
- iso: eng
page: 32461-32466
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors
type: journal_article
user_id: '84268'
volume: 13
year: '2021'
...
---
_id: '40572'
article_number: acsami.1c06013
author:
- first_name: Ivan K.
full_name: Ilic, Ivan K.
last_name: Ilic
- first_name: Enrico
full_name: Lepre, Enrico
last_name: Lepre
- first_name: Nieves
full_name: Lopez Salas, Nieves
id: '98120'
last_name: Lopez Salas
orcid: https://orcid.org/0000-0002-8438-9548
citation:
ama: Ilic IK, Lepre E, Lopez Salas N. Caffeine-Derived Noble Carbons as Ball Milling-Resistant
Cathode Materials for Lithium-Ion Capacitors. ACS Applied Materials &
Interfaces. Published online 2021. doi:10.1021/acsami.1c06013
apa: Ilic, I. K., Lepre, E., & Lopez Salas, N. (2021). Caffeine-Derived Noble
Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors.
ACS Applied Materials & Interfaces, Article acsami.1c06013. https://doi.org/10.1021/acsami.1c06013
bibtex: '@article{Ilic_Lepre_Lopez Salas_2021, title={Caffeine-Derived Noble Carbons
as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors}, DOI={10.1021/acsami.1c06013}, number={acsami.1c06013},
journal={ACS Applied Materials & Interfaces}, publisher={American Chemical
Society (ACS)}, author={Ilic, Ivan K. and Lepre, Enrico and Lopez Salas, Nieves},
year={2021} }'
chicago: Ilic, Ivan K., Enrico Lepre, and Nieves Lopez Salas. “Caffeine-Derived
Noble Carbons as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors.”
ACS Applied Materials & Interfaces, 2021. https://doi.org/10.1021/acsami.1c06013.
ieee: 'I. K. Ilic, E. Lepre, and N. Lopez Salas, “Caffeine-Derived Noble Carbons
as Ball Milling-Resistant Cathode Materials for Lithium-Ion Capacitors,” ACS
Applied Materials & Interfaces, Art. no. acsami.1c06013, 2021, doi:
10.1021/acsami.1c06013.'
mla: Ilic, Ivan K., et al. “Caffeine-Derived Noble Carbons as Ball Milling-Resistant
Cathode Materials for Lithium-Ion Capacitors.” ACS Applied Materials &
Interfaces, acsami.1c06013, American Chemical Society (ACS), 2021, doi:10.1021/acsami.1c06013.
short: I.K. Ilic, E. Lepre, N. Lopez Salas, ACS Applied Materials & Interfaces
(2021).
date_created: 2023-01-27T16:20:40Z
date_updated: 2023-01-27T16:31:41Z
doi: 10.1021/acsami.1c06013
keyword:
- General Materials Science
language:
- iso: eng
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Caffeine-Derived Noble Carbons as Ball Milling-Resistant Cathode Materials
for Lithium-Ion Capacitors
type: journal_article
user_id: '98120'
year: '2021'
...
---
_id: '23852'
author:
- first_name: Jie
full_name: Li, Jie
last_name: Li
- first_name: Chendong
full_name: Ji, Chendong
last_name: Ji
- first_name: Baozhong
full_name: Lü, Baozhong
last_name: Lü
- first_name: Maksim
full_name: Rodin, Maksim
last_name: Rodin
- first_name: Jan
full_name: Paradies, Jan
id: '53339'
last_name: Paradies
orcid: 0000-0002-3698-668X
- first_name: Meizhen
full_name: Yin, Meizhen
last_name: Yin
- first_name: Dirk
full_name: Kuckling, Dirk
id: '287'
last_name: Kuckling
citation:
ama: Li J, Ji C, Lü B, et al. Dually Crosslinked Supramolecular Hydrogel for Cancer
Biomarker Sensing. ACS Applied Materials & Interfaces. 2020;12(33):36873-36881.
doi:10.1021/acsami.0c08722
apa: Li, J., Ji, C., Lü, B., Rodin, M., Paradies, J., Yin, M., & Kuckling, D.
(2020). Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.
ACS Applied Materials & Interfaces, 12(33), 36873–36881. https://doi.org/10.1021/acsami.0c08722
bibtex: '@article{Li_Ji_Lü_Rodin_Paradies_Yin_Kuckling_2020, title={Dually Crosslinked
Supramolecular Hydrogel for Cancer Biomarker Sensing}, volume={12}, DOI={10.1021/acsami.0c08722},
number={33}, journal={ACS Applied Materials & Interfaces}, author={Li, Jie
and Ji, Chendong and Lü, Baozhong and Rodin, Maksim and Paradies, Jan and Yin,
Meizhen and Kuckling, Dirk}, year={2020}, pages={36873–36881} }'
chicago: 'Li, Jie, Chendong Ji, Baozhong Lü, Maksim Rodin, Jan Paradies, Meizhen
Yin, and Dirk Kuckling. “Dually Crosslinked Supramolecular Hydrogel for Cancer
Biomarker Sensing.” ACS Applied Materials & Interfaces 12, no. 33 (2020):
36873–81. https://doi.org/10.1021/acsami.0c08722.'
ieee: 'J. Li et al., “Dually Crosslinked Supramolecular Hydrogel for Cancer
Biomarker Sensing,” ACS Applied Materials & Interfaces, vol. 12, no.
33, pp. 36873–36881, 2020, doi: 10.1021/acsami.0c08722.'
mla: Li, Jie, et al. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker
Sensing.” ACS Applied Materials & Interfaces, vol. 12, no. 33, 2020,
pp. 36873–81, doi:10.1021/acsami.0c08722.
short: J. Li, C. Ji, B. Lü, M. Rodin, J. Paradies, M. Yin, D. Kuckling, ACS Applied
Materials & Interfaces 12 (2020) 36873–36881.
date_created: 2021-09-07T10:20:06Z
date_updated: 2022-07-28T09:46:19Z
department:
- _id: '311'
doi: 10.1021/acsami.0c08722
intvolume: ' 12'
issue: '33'
language:
- iso: eng
page: 36873-36881
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing
type: journal_article
user_id: '94'
volume: 12
year: '2020'
...
---
_id: '22235'
author:
- first_name: Jie
full_name: Li, Jie
last_name: Li
- first_name: Chendong
full_name: Ji, Chendong
last_name: Ji
- first_name: Baozhong
full_name: Lü, Baozhong
last_name: Lü
- first_name: Maksim
full_name: Rodin, Maksim
last_name: Rodin
- first_name: Jan
full_name: Paradies, Jan
id: '53339'
last_name: Paradies
orcid: 0000-0002-3698-668X
- first_name: Meizhen
full_name: Yin, Meizhen
last_name: Yin
- first_name: Dirk
full_name: Kuckling, Dirk
id: '287'
last_name: Kuckling
citation:
ama: Li J, Ji C, Lü B, et al. Dually Crosslinked Supramolecular Hydrogel for Cancer
Biomarker Sensing. ACS Applied Materials & Interfaces. Published online
2020:36873-36881. doi:10.1021/acsami.0c08722
apa: Li, J., Ji, C., Lü, B., Rodin, M., Paradies, J., Yin, M., & Kuckling, D.
(2020). Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing.
ACS Applied Materials & Interfaces, 36873–36881. https://doi.org/10.1021/acsami.0c08722
bibtex: '@article{Li_Ji_Lü_Rodin_Paradies_Yin_Kuckling_2020, title={Dually Crosslinked
Supramolecular Hydrogel for Cancer Biomarker Sensing}, DOI={10.1021/acsami.0c08722},
journal={ACS Applied Materials & Interfaces}, author={Li, Jie and Ji, Chendong
and Lü, Baozhong and Rodin, Maksim and Paradies, Jan and Yin, Meizhen and Kuckling,
Dirk}, year={2020}, pages={36873–36881} }'
chicago: Li, Jie, Chendong Ji, Baozhong Lü, Maksim Rodin, Jan Paradies, Meizhen
Yin, and Dirk Kuckling. “Dually Crosslinked Supramolecular Hydrogel for Cancer
Biomarker Sensing.” ACS Applied Materials & Interfaces, 2020, 36873–81.
https://doi.org/10.1021/acsami.0c08722.
ieee: 'J. Li et al., “Dually Crosslinked Supramolecular Hydrogel for Cancer
Biomarker Sensing,” ACS Applied Materials & Interfaces, pp. 36873–36881,
2020, doi: 10.1021/acsami.0c08722.'
mla: Li, Jie, et al. “Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker
Sensing.” ACS Applied Materials & Interfaces, 2020, pp. 36873–81, doi:10.1021/acsami.0c08722.
short: J. Li, C. Ji, B. Lü, M. Rodin, J. Paradies, M. Yin, D. Kuckling, ACS Applied
Materials & Interfaces (2020) 36873–36881.
date_created: 2021-05-26T10:27:33Z
date_updated: 2023-01-23T12:57:54Z
doi: 10.1021/acsami.0c08722
language:
- iso: eng
page: 36873-36881
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Dually Crosslinked Supramolecular Hydrogel for Cancer Biomarker Sensing
type: journal_article
user_id: '53339'
year: '2020'
...
---
_id: '25903'
abstract:
- lang: eng
text: Porous tin dioxide is an important low-cost semiconductor applied in electronics,
gas sensors, and biosensors. Here, we present a versatile template-assisted synthesis
of nanostructured tin dioxide thin films using cellulose nanocrystals (CNCs).
We demonstrate that the structural features of CNC-templated tin dioxide films
strongly depend on the precursor composition. The precursor properties were studied
by using low-temperature nuclear magnetic resonance spectroscopy of tin tetrachloride
in solution. We demonstrate that it is possible to optimize the precursor conditions
to obtain homogeneous precursor mixtures and therefore highly porous thin films
with pore dimensions in the range of 10–20 nm (ABET = 46–64 m2 g–1, measured on
powder). Finally, by exploiting the high surface area of the material, we developed
a resistive gas sensor based on CNC-templated tin dioxide. The sensor shows high
sensitivity to carbon monoxide (CO) in ppm concentrations and low cross-sensitivity
to humidity. Most importantly, the sensing kinetics are remarkably fast; both
the response to the analyte gas and the signal decay after gas exposure occur
within a few seconds, faster than in standard SnO2-based CO sensors. This is attributed
to the high gas accessibility of the very thin porous film.
article_type: original
author:
- first_name: Alesja
full_name: Ivanova, Alesja
last_name: Ivanova
- first_name: Bruno
full_name: Frka-Petesic, Bruno
last_name: Frka-Petesic
- first_name: Andrej
full_name: Paul, Andrej
last_name: Paul
- first_name: Thorsten
full_name: Wagner, Thorsten
last_name: Wagner
- first_name: Askhat N.
full_name: Jumabekov, Askhat N.
last_name: Jumabekov
- first_name: Yury
full_name: Vilk, Yury
last_name: Vilk
- first_name: Johannes
full_name: Weber, Johannes
last_name: Weber
- first_name: Jörn
full_name: Schmedt auf der Günne, Jörn
last_name: Schmedt auf der Günne
- first_name: Silvia
full_name: Vignolini, Silvia
last_name: Vignolini
- first_name: Michael
full_name: Tiemann, Michael
id: '23547'
last_name: Tiemann
orcid: 0000-0003-1711-2722
- first_name: Dina
full_name: Fattakhova-Rohlfing, Dina
last_name: Fattakhova-Rohlfing
- first_name: Thomas
full_name: Bein, Thomas
last_name: Bein
citation:
ama: Ivanova A, Frka-Petesic B, Paul A, et al. Cellulose Nanocrystal-Templated Tin
Dioxide Thin Films for Gas Sensing. ACS Applied Materials & Interfaces.
Published online 2020:12639-12647. doi:10.1021/acsami.9b11891
apa: Ivanova, A., Frka-Petesic, B., Paul, A., Wagner, T., Jumabekov, A. N., Vilk,
Y., Weber, J., Schmedt auf der Günne, J., Vignolini, S., Tiemann, M., Fattakhova-Rohlfing,
D., & Bein, T. (2020). Cellulose Nanocrystal-Templated Tin Dioxide Thin Films
for Gas Sensing. ACS Applied Materials & Interfaces, 12639–12647. https://doi.org/10.1021/acsami.9b11891
bibtex: '@article{Ivanova_Frka-Petesic_Paul_Wagner_Jumabekov_Vilk_Weber_Schmedt
auf der Günne_Vignolini_Tiemann_et al._2020, title={Cellulose Nanocrystal-Templated
Tin Dioxide Thin Films for Gas Sensing}, DOI={10.1021/acsami.9b11891},
journal={ACS Applied Materials & Interfaces}, author={Ivanova, Alesja and
Frka-Petesic, Bruno and Paul, Andrej and Wagner, Thorsten and Jumabekov, Askhat
N. and Vilk, Yury and Weber, Johannes and Schmedt auf der Günne, Jörn and Vignolini,
Silvia and Tiemann, Michael and et al.}, year={2020}, pages={12639–12647} }'
chicago: Ivanova, Alesja, Bruno Frka-Petesic, Andrej Paul, Thorsten Wagner, Askhat
N. Jumabekov, Yury Vilk, Johannes Weber, et al. “Cellulose Nanocrystal-Templated
Tin Dioxide Thin Films for Gas Sensing.” ACS Applied Materials & Interfaces,
2020, 12639–47. https://doi.org/10.1021/acsami.9b11891.
ieee: 'A. Ivanova et al., “Cellulose Nanocrystal-Templated Tin Dioxide Thin
Films for Gas Sensing,” ACS Applied Materials & Interfaces, pp. 12639–12647,
2020, doi: 10.1021/acsami.9b11891.'
mla: Ivanova, Alesja, et al. “Cellulose Nanocrystal-Templated Tin Dioxide Thin Films
for Gas Sensing.” ACS Applied Materials & Interfaces, 2020, pp. 12639–47,
doi:10.1021/acsami.9b11891.
short: A. Ivanova, B. Frka-Petesic, A. Paul, T. Wagner, A.N. Jumabekov, Y. Vilk,
J. Weber, J. Schmedt auf der Günne, S. Vignolini, M. Tiemann, D. Fattakhova-Rohlfing,
T. Bein, ACS Applied Materials & Interfaces (2020) 12639–12647.
date_created: 2021-10-08T10:39:27Z
date_updated: 2023-03-08T08:23:16Z
department:
- _id: '35'
- _id: '2'
- _id: '307'
doi: 10.1021/acsami.9b11891
language:
- iso: eng
page: 12639-12647
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
quality_controlled: '1'
status: public
title: Cellulose Nanocrystal-Templated Tin Dioxide Thin Films for Gas Sensing
type: journal_article
user_id: '23547'
year: '2020'
...
---
_id: '22833'
author:
- first_name: Lukas
full_name: Mai, Lukas
last_name: Mai
- first_name: David
full_name: Zanders, David
last_name: Zanders
- first_name: Ersoy
full_name: Subaşı, Ersoy
last_name: Subaşı
- first_name: Engin
full_name: Ciftyurek, Engin
last_name: Ciftyurek
- first_name: Christian
full_name: Hoppe, Christian
id: '27401'
last_name: Hoppe
- first_name: Detlef
full_name: Rogalla, Detlef
last_name: Rogalla
- first_name: Wolfram
full_name: Gilbert, Wolfram
last_name: Gilbert
- first_name: Teresa de los
full_name: Arcos, Teresa de los
last_name: Arcos
- first_name: Klaus
full_name: Schierbaum, Klaus
last_name: Schierbaum
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Claudia
full_name: Bock, Claudia
last_name: Bock
- first_name: Anjana
full_name: Devi, Anjana
last_name: Devi
citation:
ama: 'Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic
Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication
and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials
& Interfaces. 2019:3169-3180. doi:10.1021/acsami.8b16443'
apa: 'Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., …
Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV)
Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based
Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180.
https://doi.org/10.1021/acsami.8b16443'
bibtex: '@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_Arcos_Schierbaum_Grundmeier_et
al._2019, title={Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV)
Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based
Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443},
journal={ACS Applied Materials & Interfaces}, author={Mai, Lukas and Zanders,
David and Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla,
Detlef and Gilbert, Wolfram and Arcos, Teresa de los and Schierbaum, Klaus and
Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }'
chicago: 'Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe,
Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic
Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication
and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials
& Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.'
ieee: 'L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition
of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation
of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces,
pp. 3169–3180, 2019.'
mla: 'Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition
of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation
of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces,
2019, pp. 3169–80, doi:10.1021/acsami.8b16443.'
short: L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert,
T. de los Arcos, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS Applied Materials
& Interfaces (2019) 3169–3180.
date_created: 2021-07-27T14:11:16Z
date_updated: 2022-01-06T06:55:42Z
doi: 10.1021/acsami.8b16443
language:
- iso: eng
page: 3169-3180
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: 'Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from
a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film
Transistor Devices'
type: journal_article
user_id: '194'
year: '2019'
...
---
_id: '15726'
abstract:
- lang: eng
text: The behavior of alkali atom point defects in polycrystalline CuInSe2 is studied.
In this work, three grain boundary models, one coherent twin boundary and two
twin boundaries with dislocation cores, are considered. Total energy calculations
show that all alkali metals tend to segregate at the grain boundaries. In addition,
the segregation of alkali atoms is more pronounced at the grain boundaries with
the dislocation cores. The diffusion of alkali metals along and near grain boundaries
is studied as well. The results show that the diffusion of alkali atoms in the
grain boundary models is faster than within the bulk. In addition, the ion exchange
between Na and Rb atoms at the grain boundaries leads to the Rb enrichment at
the grain boundaries and the increase of the Na concentration in the bulk. While
the effects of Na and Rb point defects on the electronic structure of the grain
boundary with the anion-core dislocation are similar, Rb atoms passivate the grain
boundary with the cation-core dislocation more effectively than Na. This can explain
the further improvement of the solar cell performance after the RbF-postdeposition
treatment.
article_type: original
author:
- first_name: Manjusha
full_name: Chugh, Manjusha
last_name: Chugh
- first_name: Thomas
full_name: Kühne, Thomas
id: '49079'
last_name: Kühne
- first_name: S. Hossein
full_name: Mirhosseini, S. Hossein
id: '71051'
last_name: Mirhosseini
orcid: 0000-0001-6179-1545
citation:
ama: Chugh M, Kühne T, Mirhosseini SH. Diffusion of Alkali Metals in Polycrystalline
CuInSe2 and Their Role in the Passivation of Grain Boundaries. ACS Applied
Materials & Interfaces. Published online 2019:14821-14829. doi:10.1021/acsami.9b02158
apa: Chugh, M., Kühne, T., & Mirhosseini, S. H. (2019). Diffusion of Alkali
Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries.
ACS Applied Materials & Interfaces, 14821–14829. https://doi.org/10.1021/acsami.9b02158
bibtex: '@article{Chugh_Kühne_Mirhosseini_2019, title={Diffusion of Alkali Metals
in Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries},
DOI={10.1021/acsami.9b02158},
journal={ACS Applied Materials & Interfaces}, author={Chugh, Manjusha and
Kühne, Thomas and Mirhosseini, S. Hossein}, year={2019}, pages={14821–14829} }'
chicago: Chugh, Manjusha, Thomas Kühne, and S. Hossein Mirhosseini. “Diffusion of
Alkali Metals in Polycrystalline CuInSe2 and Their Role in the Passivation of
Grain Boundaries.” ACS Applied Materials & Interfaces, 2019, 14821–29.
https://doi.org/10.1021/acsami.9b02158.
ieee: 'M. Chugh, T. Kühne, and S. H. Mirhosseini, “Diffusion of Alkali Metals in
Polycrystalline CuInSe2 and Their Role in the Passivation of Grain Boundaries,”
ACS Applied Materials & Interfaces, pp. 14821–14829, 2019, doi: 10.1021/acsami.9b02158.'
mla: Chugh, Manjusha, et al. “Diffusion of Alkali Metals in Polycrystalline CuInSe2
and Their Role in the Passivation of Grain Boundaries.” ACS Applied Materials
& Interfaces, 2019, pp. 14821–29, doi:10.1021/acsami.9b02158.
short: M. Chugh, T. Kühne, S.H. Mirhosseini, ACS Applied Materials & Interfaces
(2019) 14821–14829.
date_created: 2020-01-30T13:07:16Z
date_updated: 2022-07-21T09:41:18Z
doi: 10.1021/acsami.9b02158
language:
- iso: eng
page: 14821-14829
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Diffusion of Alkali Metals in Polycrystalline CuInSe2 and Their Role in the
Passivation of Grain Boundaries
type: journal_article
user_id: '71051'
year: '2019'
...
---
_id: '22545'
author:
- first_name: Lukas
full_name: Mai, Lukas
last_name: Mai
- first_name: David
full_name: Zanders, David
last_name: Zanders
- first_name: Ersoy
full_name: Subaşı, Ersoy
last_name: Subaşı
- first_name: Engin
full_name: Ciftyurek, Engin
last_name: Ciftyurek
- first_name: Christian
full_name: Hoppe, Christian
last_name: Hoppe
- first_name: Detlef
full_name: Rogalla, Detlef
last_name: Rogalla
- first_name: Wolfram
full_name: Gilbert, Wolfram
last_name: Gilbert
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: Klaus
full_name: Schierbaum, Klaus
last_name: Schierbaum
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Claudia
full_name: Bock, Claudia
last_name: Bock
- first_name: Anjana
full_name: Devi, Anjana
last_name: Devi
citation:
ama: 'Mai L, Zanders D, Subaşı E, et al. Low-Temperature Plasma-Enhanced Atomic
Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication
and Evaluation of SnO2-Based Thin-Film Transistor Devices. ACS Applied Materials
& Interfaces. Published online 2019:3169-3180. doi:10.1021/acsami.8b16443'
apa: 'Mai, L., Zanders, D., Subaşı, E., Ciftyurek, E., Hoppe, C., Rogalla, D., Gilbert,
W., de los Arcos de Pedro, M. T., Schierbaum, K., Grundmeier, G., Bock, C., &
Devi, A. (2019). Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV)
Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based
Thin-Film Transistor Devices. ACS Applied Materials & Interfaces, 3169–3180.
https://doi.org/10.1021/acsami.8b16443'
bibtex: '@article{Mai_Zanders_Subaşı_Ciftyurek_Hoppe_Rogalla_Gilbert_de los Arcos
de Pedro_Schierbaum_Grundmeier_et al._2019, title={Low-Temperature Plasma-Enhanced
Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor:
Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices}, DOI={10.1021/acsami.8b16443}, journal={ACS
Applied Materials & Interfaces}, author={Mai, Lukas and Zanders, David and
Subaşı, Ersoy and Ciftyurek, Engin and Hoppe, Christian and Rogalla, Detlef and
Gilbert, Wolfram and de los Arcos de Pedro, Maria Teresa and Schierbaum, Klaus
and Grundmeier, Guido and et al.}, year={2019}, pages={3169–3180} }'
chicago: 'Mai, Lukas, David Zanders, Ersoy Subaşı, Engin Ciftyurek, Christian Hoppe,
Detlef Rogalla, Wolfram Gilbert, et al. “Low-Temperature Plasma-Enhanced Atomic
Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication
and Evaluation of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials
& Interfaces, 2019, 3169–80. https://doi.org/10.1021/acsami.8b16443.'
ieee: 'L. Mai et al., “Low-Temperature Plasma-Enhanced Atomic Layer Deposition
of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation
of SnO2-Based Thin-Film Transistor Devices,” ACS Applied Materials & Interfaces,
pp. 3169–3180, 2019, doi: 10.1021/acsami.8b16443.'
mla: 'Mai, Lukas, et al. “Low-Temperature Plasma-Enhanced Atomic Layer Deposition
of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation
of SnO2-Based Thin-Film Transistor Devices.” ACS Applied Materials & Interfaces,
2019, pp. 3169–80, doi:10.1021/acsami.8b16443.'
short: L. Mai, D. Zanders, E. Subaşı, E. Ciftyurek, C. Hoppe, D. Rogalla, W. Gilbert,
M.T. de los Arcos de Pedro, K. Schierbaum, G. Grundmeier, C. Bock, A. Devi, ACS
Applied Materials & Interfaces (2019) 3169–3180.
date_created: 2021-07-07T08:49:23Z
date_updated: 2023-01-24T08:35:14Z
department:
- _id: '302'
doi: 10.1021/acsami.8b16443
language:
- iso: eng
page: 3169-3180
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: 'Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from
a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film
Transistor Devices'
type: journal_article
user_id: '54556'
year: '2019'
...
---
_id: '23623'
author:
- first_name: Lin
full_name: Chen, Lin
last_name: Chen
- first_name: Kan-Sheng
full_name: Chen, Kan-Sheng
last_name: Chen
- first_name: Xinjie
full_name: Chen, Xinjie
last_name: Chen
- first_name: Giovanni
full_name: Ramirez, Giovanni
last_name: Ramirez
- first_name: Zhennan
full_name: Huang, Zhennan
last_name: Huang
- first_name: Natalie R.
full_name: Geise, Natalie R.
last_name: Geise
- first_name: Hans-Georg
full_name: Steinrück, Hans-Georg
id: '84268'
last_name: Steinrück
orcid: 0000-0001-6373-0877
- first_name: Brandon L.
full_name: Fisher, Brandon L.
last_name: Fisher
- first_name: Reza
full_name: Shahbazian-Yassar, Reza
last_name: Shahbazian-Yassar
- first_name: Michael F.
full_name: Toney, Michael F.
last_name: Toney
- first_name: Mark C.
full_name: Hersam, Mark C.
last_name: Hersam
- first_name: Jeffrey W.
full_name: Elam, Jeffrey W.
last_name: Elam
citation:
ama: Chen L, Chen K-S, Chen X, et al. Novel ALD Chemistry Enabled Low-Temperature
Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes. ACS Applied
Materials & Interfaces. 2018;20:26972-26981. doi:10.1021/acsami.8b04573
apa: Chen, L., Chen, K.-S., Chen, X., Ramirez, G., Huang, Z., Geise, N. R., Steinrück,
H.-G., Fisher, B. L., Shahbazian-Yassar, R., Toney, M. F., Hersam, M. C., &
Elam, J. W. (2018). Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium
Fluoride Coatings for Durable Lithium Anodes. ACS Applied Materials & Interfaces,
20, 26972–26981. https://doi.org/10.1021/acsami.8b04573
bibtex: '@article{Chen_Chen_Chen_Ramirez_Huang_Geise_Steinrück_Fisher_Shahbazian-Yassar_Toney_et
al._2018, title={Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium
Fluoride Coatings for Durable Lithium Anodes}, volume={20}, DOI={10.1021/acsami.8b04573},
journal={ACS Applied Materials & Interfaces}, author={Chen, Lin and Chen,
Kan-Sheng and Chen, Xinjie and Ramirez, Giovanni and Huang, Zhennan and Geise,
Natalie R. and Steinrück, Hans-Georg and Fisher, Brandon L. and Shahbazian-Yassar,
Reza and Toney, Michael F. and et al.}, year={2018}, pages={26972–26981} }'
chicago: 'Chen, Lin, Kan-Sheng Chen, Xinjie Chen, Giovanni Ramirez, Zhennan Huang,
Natalie R. Geise, Hans-Georg Steinrück, et al. “Novel ALD Chemistry Enabled Low-Temperature
Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes.” ACS Applied
Materials & Interfaces 20 (2018): 26972–81. https://doi.org/10.1021/acsami.8b04573.'
ieee: 'L. Chen et al., “Novel ALD Chemistry Enabled Low-Temperature Synthesis
of Lithium Fluoride Coatings for Durable Lithium Anodes,” ACS Applied Materials
& Interfaces, vol. 20, pp. 26972–26981, 2018, doi: 10.1021/acsami.8b04573.'
mla: Chen, Lin, et al. “Novel ALD Chemistry Enabled Low-Temperature Synthesis of
Lithium Fluoride Coatings for Durable Lithium Anodes.” ACS Applied Materials
& Interfaces, vol. 20, 2018, pp. 26972–81, doi:10.1021/acsami.8b04573.
short: L. Chen, K.-S. Chen, X. Chen, G. Ramirez, Z. Huang, N.R. Geise, H.-G. Steinrück,
B.L. Fisher, R. Shahbazian-Yassar, M.F. Toney, M.C. Hersam, J.W. Elam, ACS Applied
Materials & Interfaces 20 (2018) 26972–26981.
date_created: 2021-09-01T09:47:02Z
date_updated: 2022-01-06T06:55:57Z
department:
- _id: '633'
doi: 10.1021/acsami.8b04573
intvolume: ' 20'
language:
- iso: eng
page: 26972-26981
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings
for Durable Lithium Anodes
type: journal_article
user_id: '84268'
volume: 20
year: '2018'
...
---
_id: '22658'
author:
- first_name: Charlotte
full_name: Kielar, Charlotte
last_name: Kielar
- first_name: Saminathan
full_name: Ramakrishnan, Saminathan
last_name: Ramakrishnan
- first_name: Sebastian
full_name: Fricke, Sebastian
last_name: Fricke
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Adrian
full_name: Keller, Adrian
id: '48864'
last_name: Keller
orcid: 0000-0001-7139-3110
citation:
ama: Kielar C, Ramakrishnan S, Fricke S, Grundmeier G, Keller A. Dynamics of DNA
Origami Lattice Formation at Solid–Liquid Interfaces. ACS Applied Materials
& Interfaces. 2018;10:44844-44853. doi:10.1021/acsami.8b16047
apa: Kielar, C., Ramakrishnan, S., Fricke, S., Grundmeier, G., & Keller, A.
(2018). Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces.
ACS Applied Materials & Interfaces, 10, 44844–44853. https://doi.org/10.1021/acsami.8b16047
bibtex: '@article{Kielar_Ramakrishnan_Fricke_Grundmeier_Keller_2018, title={Dynamics
of DNA Origami Lattice Formation at Solid–Liquid Interfaces}, volume={10}, DOI={10.1021/acsami.8b16047}, journal={ACS
Applied Materials & Interfaces}, author={Kielar, Charlotte and Ramakrishnan,
Saminathan and Fricke, Sebastian and Grundmeier, Guido and Keller, Adrian}, year={2018},
pages={44844–44853} }'
chicago: 'Kielar, Charlotte, Saminathan Ramakrishnan, Sebastian Fricke, Guido Grundmeier,
and Adrian Keller. “Dynamics of DNA Origami Lattice Formation at Solid–Liquid
Interfaces.” ACS Applied Materials & Interfaces 10 (2018): 44844–53.
https://doi.org/10.1021/acsami.8b16047.'
ieee: C. Kielar, S. Ramakrishnan, S. Fricke, G. Grundmeier, and A. Keller, “Dynamics
of DNA Origami Lattice Formation at Solid–Liquid Interfaces,” ACS Applied Materials
& Interfaces, vol. 10, pp. 44844–44853, 2018.
mla: Kielar, Charlotte, et al. “Dynamics of DNA Origami Lattice Formation at Solid–Liquid
Interfaces.” ACS Applied Materials & Interfaces, vol. 10, 2018, pp.
44844–53, doi:10.1021/acsami.8b16047.
short: C. Kielar, S. Ramakrishnan, S. Fricke, G. Grundmeier, A. Keller, ACS Applied
Materials & Interfaces 10 (2018) 44844–44853.
date_created: 2021-07-08T12:18:33Z
date_updated: 2022-01-06T06:55:38Z
department:
- _id: '302'
doi: 10.1021/acsami.8b16047
intvolume: ' 10'
language:
- iso: eng
page: 44844-44853
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Dynamics of DNA Origami Lattice Formation at Solid–Liquid Interfaces
type: journal_article
user_id: '48864'
volume: 10
year: '2018'
...
---
_id: '22550'
author:
- first_name: Maximilian
full_name: Gebhard, Maximilian
last_name: Gebhard
- first_name: Lukas
full_name: Mai, Lukas
last_name: Mai
- first_name: Lars
full_name: Banko, Lars
last_name: Banko
- first_name: Felix
full_name: Mitschker, Felix
last_name: Mitschker
- first_name: Christian
full_name: Hoppe, Christian
last_name: Hoppe
- first_name: Montgomery
full_name: Jaritz, Montgomery
last_name: Jaritz
- first_name: Dennis
full_name: Kirchheim, Dennis
last_name: Kirchheim
- first_name: Christoph
full_name: Zekorn, Christoph
last_name: Zekorn
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: Dario
full_name: Grochla, Dario
last_name: Grochla
- first_name: Rainer
full_name: Dahlmann, Rainer
last_name: Dahlmann
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Peter
full_name: Awakowicz, Peter
last_name: Awakowicz
- first_name: Alfred
full_name: Ludwig, Alfred
last_name: Ludwig
- first_name: Anjana
full_name: Devi, Anjana
last_name: Devi
citation:
ama: 'Gebhard M, Mai L, Banko L, et al. PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads. ACS Applied Materials & Interfaces. Published online 2018:7422-7434.
doi:10.1021/acsami.7b14916'
apa: 'Gebhard, M., Mai, L., Banko, L., Mitschker, F., Hoppe, C., Jaritz, M., Kirchheim,
D., Zekorn, C., de los Arcos de Pedro, M. T., Grochla, D., Dahlmann, R., Grundmeier,
G., Awakowicz, P., Ludwig, A., & Devi, A. (2018). PEALD of SiO2 and Al2O3
Thin Films on Polypropylene: Investigations of the Film Growth at the Interface,
Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces,
7422–7434. https://doi.org/10.1021/acsami.7b14916'
bibtex: '@article{Gebhard_Mai_Banko_Mitschker_Hoppe_Jaritz_Kirchheim_Zekorn_de los
Arcos de Pedro_Grochla_et al._2018, title={PEALD of SiO2 and Al2O3 Thin Films
on Polypropylene: Investigations of the Film Growth at the Interface, Stress,
and Gas Barrier Properties of Dyads}, DOI={10.1021/acsami.7b14916},
journal={ACS Applied Materials & Interfaces}, author={Gebhard, Maximilian
and Mai, Lukas and Banko, Lars and Mitschker, Felix and Hoppe, Christian and Jaritz,
Montgomery and Kirchheim, Dennis and Zekorn, Christoph and de los Arcos de Pedro,
Maria Teresa and Grochla, Dario and et al.}, year={2018}, pages={7422–7434} }'
chicago: 'Gebhard, Maximilian, Lukas Mai, Lars Banko, Felix Mitschker, Christian
Hoppe, Montgomery Jaritz, Dennis Kirchheim, et al. “PEALD of SiO2 and Al2O3 Thin
Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress,
and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces,
2018, 7422–34. https://doi.org/10.1021/acsami.7b14916.'
ieee: 'M. Gebhard et al., “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads,” ACS Applied Materials & Interfaces, pp. 7422–7434, 2018,
doi: 10.1021/acsami.7b14916.'
mla: 'Gebhard, Maximilian, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads.” ACS Applied Materials & Interfaces, 2018, pp. 7422–34, doi:10.1021/acsami.7b14916.'
short: M. Gebhard, L. Mai, L. Banko, F. Mitschker, C. Hoppe, M. Jaritz, D. Kirchheim,
C. Zekorn, M.T. de los Arcos de Pedro, D. Grochla, R. Dahlmann, G. Grundmeier,
P. Awakowicz, A. Ludwig, A. Devi, ACS Applied Materials & Interfaces (2018)
7422–7434.
date_created: 2021-07-07T08:59:20Z
date_updated: 2023-01-24T08:38:00Z
department:
- _id: '302'
doi: 10.1021/acsami.7b14916
language:
- iso: eng
page: 7422-7434
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: 'PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the
Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads'
type: journal_article
user_id: '54556'
year: '2018'
...
---
_id: '22549'
author:
- first_name: Maximilian
full_name: Gebhard, Maximilian
last_name: Gebhard
- first_name: Lukas
full_name: Mai, Lukas
last_name: Mai
- first_name: Lars
full_name: Banko, Lars
last_name: Banko
- first_name: Felix
full_name: Mitschker, Felix
last_name: Mitschker
- first_name: Christian
full_name: Hoppe, Christian
last_name: Hoppe
- first_name: Montgomery
full_name: Jaritz, Montgomery
last_name: Jaritz
- first_name: Dennis
full_name: Kirchheim, Dennis
last_name: Kirchheim
- first_name: Christoph
full_name: Zekorn, Christoph
last_name: Zekorn
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: Dario
full_name: Grochla, Dario
last_name: Grochla
- first_name: Rainer
full_name: Dahlmann, Rainer
last_name: Dahlmann
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Peter
full_name: Awakowicz, Peter
last_name: Awakowicz
- first_name: Alfred
full_name: Ludwig, Alfred
last_name: Ludwig
- first_name: Anjana
full_name: Devi, Anjana
last_name: Devi
citation:
ama: 'Gebhard M, Mai L, Banko L, et al. PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads. ACS Applied Materials & Interfaces. Published online 2018:7422-7434.
doi:10.1021/acsami.7b14916'
apa: 'Gebhard, M., Mai, L., Banko, L., Mitschker, F., Hoppe, C., Jaritz, M., Kirchheim,
D., Zekorn, C., de los Arcos de Pedro, M. T., Grochla, D., Dahlmann, R., Grundmeier,
G., Awakowicz, P., Ludwig, A., & Devi, A. (2018). PEALD of SiO2 and Al2O3
Thin Films on Polypropylene: Investigations of the Film Growth at the Interface,
Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces,
7422–7434. https://doi.org/10.1021/acsami.7b14916'
bibtex: '@article{Gebhard_Mai_Banko_Mitschker_Hoppe_Jaritz_Kirchheim_Zekorn_de los
Arcos de Pedro_Grochla_et al._2018, title={PEALD of SiO2 and Al2O3 Thin Films
on Polypropylene: Investigations of the Film Growth at the Interface, Stress,
and Gas Barrier Properties of Dyads}, DOI={10.1021/acsami.7b14916},
journal={ACS Applied Materials & Interfaces}, author={Gebhard, Maximilian
and Mai, Lukas and Banko, Lars and Mitschker, Felix and Hoppe, Christian and Jaritz,
Montgomery and Kirchheim, Dennis and Zekorn, Christoph and de los Arcos de Pedro,
Maria Teresa and Grochla, Dario and et al.}, year={2018}, pages={7422–7434} }'
chicago: 'Gebhard, Maximilian, Lukas Mai, Lars Banko, Felix Mitschker, Christian
Hoppe, Montgomery Jaritz, Dennis Kirchheim, et al. “PEALD of SiO2 and Al2O3 Thin
Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress,
and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces,
2018, 7422–34. https://doi.org/10.1021/acsami.7b14916.'
ieee: 'M. Gebhard et al., “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads,” ACS Applied Materials & Interfaces, pp. 7422–7434, 2018,
doi: 10.1021/acsami.7b14916.'
mla: 'Gebhard, Maximilian, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads.” ACS Applied Materials & Interfaces, 2018, pp. 7422–34, doi:10.1021/acsami.7b14916.'
short: M. Gebhard, L. Mai, L. Banko, F. Mitschker, C. Hoppe, M. Jaritz, D. Kirchheim,
C. Zekorn, M.T. de los Arcos de Pedro, D. Grochla, R. Dahlmann, G. Grundmeier,
P. Awakowicz, A. Ludwig, A. Devi, ACS Applied Materials & Interfaces (2018)
7422–7434.
date_created: 2021-07-07T08:59:10Z
date_updated: 2023-01-24T08:37:41Z
department:
- _id: '302'
doi: 10.1021/acsami.7b14916
language:
- iso: eng
page: 7422-7434
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: 'PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the
Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads'
type: journal_article
user_id: '54556'
year: '2018'
...
---
_id: '22551'
author:
- first_name: Maximilian
full_name: Gebhard, Maximilian
last_name: Gebhard
- first_name: Lukas
full_name: Mai, Lukas
last_name: Mai
- first_name: Lars
full_name: Banko, Lars
last_name: Banko
- first_name: Felix
full_name: Mitschker, Felix
last_name: Mitschker
- first_name: Christian
full_name: Hoppe, Christian
last_name: Hoppe
- first_name: Montgomery
full_name: Jaritz, Montgomery
last_name: Jaritz
- first_name: Dennis
full_name: Kirchheim, Dennis
last_name: Kirchheim
- first_name: Christoph
full_name: Zekorn, Christoph
last_name: Zekorn
- first_name: Maria Teresa
full_name: de los Arcos de Pedro, Maria Teresa
id: '54556'
last_name: de los Arcos de Pedro
- first_name: Dario
full_name: Grochla, Dario
last_name: Grochla
- first_name: Rainer
full_name: Dahlmann, Rainer
last_name: Dahlmann
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Peter
full_name: Awakowicz, Peter
last_name: Awakowicz
- first_name: Alfred
full_name: Ludwig, Alfred
last_name: Ludwig
- first_name: Anjana
full_name: Devi, Anjana
last_name: Devi
citation:
ama: 'Gebhard M, Mai L, Banko L, et al. PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads. ACS Applied Materials & Interfaces. Published online 2018:7422-7434.
doi:10.1021/acsami.7b14916'
apa: 'Gebhard, M., Mai, L., Banko, L., Mitschker, F., Hoppe, C., Jaritz, M., Kirchheim,
D., Zekorn, C., de los Arcos de Pedro, M. T., Grochla, D., Dahlmann, R., Grundmeier,
G., Awakowicz, P., Ludwig, A., & Devi, A. (2018). PEALD of SiO2 and Al2O3
Thin Films on Polypropylene: Investigations of the Film Growth at the Interface,
Stress, and Gas Barrier Properties of Dyads. ACS Applied Materials & Interfaces,
7422–7434. https://doi.org/10.1021/acsami.7b14916'
bibtex: '@article{Gebhard_Mai_Banko_Mitschker_Hoppe_Jaritz_Kirchheim_Zekorn_de los
Arcos de Pedro_Grochla_et al._2018, title={PEALD of SiO2 and Al2O3 Thin Films
on Polypropylene: Investigations of the Film Growth at the Interface, Stress,
and Gas Barrier Properties of Dyads}, DOI={10.1021/acsami.7b14916},
journal={ACS Applied Materials & Interfaces}, author={Gebhard, Maximilian
and Mai, Lukas and Banko, Lars and Mitschker, Felix and Hoppe, Christian and Jaritz,
Montgomery and Kirchheim, Dennis and Zekorn, Christoph and de los Arcos de Pedro,
Maria Teresa and Grochla, Dario and et al.}, year={2018}, pages={7422–7434} }'
chicago: 'Gebhard, Maximilian, Lukas Mai, Lars Banko, Felix Mitschker, Christian
Hoppe, Montgomery Jaritz, Dennis Kirchheim, et al. “PEALD of SiO2 and Al2O3 Thin
Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress,
and Gas Barrier Properties of Dyads.” ACS Applied Materials & Interfaces,
2018, 7422–34. https://doi.org/10.1021/acsami.7b14916.'
ieee: 'M. Gebhard et al., “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads,” ACS Applied Materials & Interfaces, pp. 7422–7434, 2018,
doi: 10.1021/acsami.7b14916.'
mla: 'Gebhard, Maximilian, et al. “PEALD of SiO2 and Al2O3 Thin Films on Polypropylene:
Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties
of Dyads.” ACS Applied Materials & Interfaces, 2018, pp. 7422–34, doi:10.1021/acsami.7b14916.'
short: M. Gebhard, L. Mai, L. Banko, F. Mitschker, C. Hoppe, M. Jaritz, D. Kirchheim,
C. Zekorn, M.T. de los Arcos de Pedro, D. Grochla, R. Dahlmann, G. Grundmeier,
P. Awakowicz, A. Ludwig, A. Devi, ACS Applied Materials & Interfaces (2018)
7422–7434.
date_created: 2021-07-07T08:59:35Z
date_updated: 2023-01-24T08:38:19Z
department:
- _id: '302'
doi: 10.1021/acsami.7b14916
language:
- iso: eng
page: 7422-7434
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: 'PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the
Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads'
type: journal_article
user_id: '54556'
year: '2018'
...
---
_id: '3992'
author:
- first_name: Torsten
full_name: Rieger, Torsten
last_name: Rieger
- first_name: Thomas
full_name: Riedl, Thomas
id: '36950'
last_name: Riedl
- first_name: Elmar
full_name: Neumann, Elmar
last_name: Neumann
- first_name: Detlev
full_name: Grützmacher, Detlev
last_name: Grützmacher
- first_name: Jörg
full_name: Lindner, Jörg
id: '20797'
last_name: Lindner
- first_name: Alexander
full_name: Pawlis, Alexander
last_name: Pawlis
citation:
ama: 'Rieger T, Riedl T, Neumann E, Grützmacher D, Lindner J, Pawlis A. Strain Compensation
in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental Evidence.
ACS Applied Materials & Interfaces. 2017;9(9):8371-8377. doi:10.1021/acsami.6b15824'
apa: 'Rieger, T., Riedl, T., Neumann, E., Grützmacher, D., Lindner, J., & Pawlis,
A. (2017). Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model
and Experimental Evidence. ACS Applied Materials & Interfaces, 9(9),
8371–8377. https://doi.org/10.1021/acsami.6b15824'
bibtex: '@article{Rieger_Riedl_Neumann_Grützmacher_Lindner_Pawlis_2017, title={Strain
Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental
Evidence}, volume={9}, DOI={10.1021/acsami.6b15824},
number={9}, journal={ACS Applied Materials & Interfaces}, publisher={American
Chemical Society (ACS)}, author={Rieger, Torsten and Riedl, Thomas and Neumann,
Elmar and Grützmacher, Detlev and Lindner, Jörg and Pawlis, Alexander}, year={2017},
pages={8371–8377} }'
chicago: 'Rieger, Torsten, Thomas Riedl, Elmar Neumann, Detlev Grützmacher, Jörg
Lindner, and Alexander Pawlis. “Strain Compensation in Single ZnSe/CdSe Quantum
Wells: Analytical Model and Experimental Evidence.” ACS Applied Materials &
Interfaces 9, no. 9 (2017): 8371–77. https://doi.org/10.1021/acsami.6b15824.'
ieee: 'T. Rieger, T. Riedl, E. Neumann, D. Grützmacher, J. Lindner, and A. Pawlis,
“Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and Experimental
Evidence,” ACS Applied Materials & Interfaces, vol. 9, no. 9, pp. 8371–8377,
2017.'
mla: 'Rieger, Torsten, et al. “Strain Compensation in Single ZnSe/CdSe Quantum Wells:
Analytical Model and Experimental Evidence.” ACS Applied Materials & Interfaces,
vol. 9, no. 9, American Chemical Society (ACS), 2017, pp. 8371–77, doi:10.1021/acsami.6b15824.'
short: T. Rieger, T. Riedl, E. Neumann, D. Grützmacher, J. Lindner, A. Pawlis, ACS
Applied Materials & Interfaces 9 (2017) 8371–8377.
date_created: 2018-08-21T11:45:23Z
date_updated: 2022-01-06T07:00:05Z
department:
- _id: '286'
- _id: '15'
doi: 10.1021/acsami.6b15824
intvolume: ' 9'
issue: '9'
page: 8371-8377
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: 'Strain Compensation in Single ZnSe/CdSe Quantum Wells: Analytical Model and
Experimental Evidence'
type: journal_article
user_id: '55706'
volume: 9
year: '2017'
...
---
_id: '46006'
author:
- first_name: Tao
full_name: Wan, Tao
last_name: Wan
- first_name: Ying
full_name: Pan, Ying
id: '100383'
last_name: Pan
- first_name: Haiwei
full_name: Du, Haiwei
last_name: Du
- first_name: Bo
full_name: Qu, Bo
last_name: Qu
- first_name: Jiabao
full_name: Yi, Jiabao
last_name: Yi
- first_name: Dewei
full_name: Chu, Dewei
last_name: Chu
citation:
ama: Wan T, Pan Y, Du H, Qu B, Yi J, Chu D. Threshold Switching Induced by Controllable
Fragmentation in Silver Nanowire Networks. ACS Applied Materials &
Interfaces. 2017;10(3):2716-2724. doi:10.1021/acsami.7b16142
apa: Wan, T., Pan, Y., Du, H., Qu, B., Yi, J., & Chu, D. (2017). Threshold Switching
Induced by Controllable Fragmentation in Silver Nanowire Networks. ACS Applied
Materials & Interfaces, 10(3), 2716–2724. https://doi.org/10.1021/acsami.7b16142
bibtex: '@article{Wan_Pan_Du_Qu_Yi_Chu_2017, title={Threshold Switching Induced
by Controllable Fragmentation in Silver Nanowire Networks}, volume={10}, DOI={10.1021/acsami.7b16142}, number={3},
journal={ACS Applied Materials & Interfaces}, publisher={American Chemical
Society (ACS)}, author={Wan, Tao and Pan, Ying and Du, Haiwei and Qu, Bo and Yi,
Jiabao and Chu, Dewei}, year={2017}, pages={2716–2724} }'
chicago: 'Wan, Tao, Ying Pan, Haiwei Du, Bo Qu, Jiabao Yi, and Dewei Chu. “Threshold
Switching Induced by Controllable Fragmentation in Silver Nanowire Networks.”
ACS Applied Materials & Interfaces 10, no. 3 (2017): 2716–24. https://doi.org/10.1021/acsami.7b16142.'
ieee: 'T. Wan, Y. Pan, H. Du, B. Qu, J. Yi, and D. Chu, “Threshold Switching Induced
by Controllable Fragmentation in Silver Nanowire Networks,” ACS Applied Materials
& Interfaces, vol. 10, no. 3, pp. 2716–2724, 2017, doi: 10.1021/acsami.7b16142.'
mla: Wan, Tao, et al. “Threshold Switching Induced by Controllable Fragmentation
in Silver Nanowire Networks.” ACS Applied Materials & Interfaces,
vol. 10, no. 3, American Chemical Society (ACS), 2017, pp. 2716–24, doi:10.1021/acsami.7b16142.
short: T. Wan, Y. Pan, H. Du, B. Qu, J. Yi, D. Chu, ACS Applied Materials &
Interfaces 10 (2017) 2716–2724.
date_created: 2023-07-11T14:48:55Z
date_updated: 2023-07-11T16:41:21Z
doi: 10.1021/acsami.7b16142
extern: '1'
intvolume: ' 10'
issue: '3'
keyword:
- General Materials Science
language:
- iso: eng
page: 2716-2724
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
publisher: American Chemical Society (ACS)
status: public
title: Threshold Switching Induced by Controllable Fragmentation in Silver Nanowire
Networks
type: journal_article
user_id: '100383'
volume: 10
year: '2017'
...
---
_id: '22672'
author:
- first_name: Saminathan
full_name: Ramakrishnan, Saminathan
last_name: Ramakrishnan
- first_name: Sivaraman
full_name: Subramaniam, Sivaraman
last_name: Subramaniam
- first_name: A. Francis
full_name: Stewart, A. Francis
last_name: Stewart
- first_name: Guido
full_name: Grundmeier, Guido
id: '194'
last_name: Grundmeier
- first_name: Adrian
full_name: Keller, Adrian
id: '48864'
last_name: Keller
orcid: 0000-0001-7139-3110
citation:
ama: Ramakrishnan S, Subramaniam S, Stewart AF, Grundmeier G, Keller A. Regular
Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA
Origami Masks. ACS Applied Materials & Interfaces. 2016;8:31239-31247.
doi:10.1021/acsami.6b10535
apa: Ramakrishnan, S., Subramaniam, S., Stewart, A. F., Grundmeier, G., & Keller,
A. (2016). Regular Nanoscale Protein Patterns via Directed Adsorption through
Self-Assembled DNA Origami Masks. ACS Applied Materials & Interfaces,
8, 31239–31247. https://doi.org/10.1021/acsami.6b10535
bibtex: '@article{Ramakrishnan_Subramaniam_Stewart_Grundmeier_Keller_2016, title={Regular
Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled DNA
Origami Masks}, volume={8}, DOI={10.1021/acsami.6b10535},
journal={ACS Applied Materials & Interfaces}, author={Ramakrishnan, Saminathan
and Subramaniam, Sivaraman and Stewart, A. Francis and Grundmeier, Guido and Keller,
Adrian}, year={2016}, pages={31239–31247} }'
chicago: 'Ramakrishnan, Saminathan, Sivaraman Subramaniam, A. Francis Stewart, Guido
Grundmeier, and Adrian Keller. “Regular Nanoscale Protein Patterns via Directed
Adsorption through Self-Assembled DNA Origami Masks.” ACS Applied Materials
& Interfaces 8 (2016): 31239–47. https://doi.org/10.1021/acsami.6b10535.'
ieee: S. Ramakrishnan, S. Subramaniam, A. F. Stewart, G. Grundmeier, and A. Keller,
“Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled
DNA Origami Masks,” ACS Applied Materials & Interfaces, vol. 8, pp.
31239–31247, 2016.
mla: Ramakrishnan, Saminathan, et al. “Regular Nanoscale Protein Patterns via Directed
Adsorption through Self-Assembled DNA Origami Masks.” ACS Applied Materials
& Interfaces, vol. 8, 2016, pp. 31239–47, doi:10.1021/acsami.6b10535.
short: S. Ramakrishnan, S. Subramaniam, A.F. Stewart, G. Grundmeier, A. Keller,
ACS Applied Materials & Interfaces 8 (2016) 31239–31247.
date_created: 2021-07-08T12:47:25Z
date_updated: 2022-01-06T06:55:38Z
department:
- _id: '302'
doi: 10.1021/acsami.6b10535
intvolume: ' 8'
language:
- iso: eng
page: 31239-31247
publication: ACS Applied Materials & Interfaces
publication_identifier:
issn:
- 1944-8244
- 1944-8252
publication_status: published
status: public
title: Regular Nanoscale Protein Patterns via Directed Adsorption through Self-Assembled
DNA Origami Masks
type: journal_article
user_id: '48864'
volume: 8
year: '2016'
...