@article{53084,
abstract = {{AbstractThe thermal decomposition of Zr(acac)4 is studied in a SiC-microreactor on the micro-second time scale. By utilizing synchrotron radiation and photoelectron photoion coincidence spectroscopy, six important zirconium intermediates, as for instance Zr(C5H7O2)2(C5H6O2), and Zr(C5H6O2)2, are identified in the gas phase for the first time. The adiabatic ionization thresholds of intermediately formed zirconium species are estimated and the main products of their thermal decomposition, acetylacetone, acetylallene and acetone are characterized unambiguously and isomer-selectively. Based on all detected intermediates, we deduce the predominant pyrolysis pathways of the precursor in the temperature range from 400 to 900 K. Our findings are complemented by numerical simulations of the flow field in the microreactor, which show that the choice of dilution gas significantly influences the temperature profile and residence times in the microreactor, such that helium provides a more uniform flow field than argon and should preferentially be used.
Graphical abstract
Using a soft ionization method coupled to velocity map imaging (VMI), leads to valuable insights in the thermal decomposition of Zr(C5H7O2)4, used in the synthesis of functional nanomaterials and ceramic coatings. Thanks to the use of a microreactor, important gas}},
author = {{Grimm, Sebastian and Baik, Seung-Jin and Hemberger, Patrick and Kasper, Tina and Kempf, Andreas M. and Atakan, Burak}},
issn = {{0884-2914}},
journal = {{Journal of Materials Research}},
keywords = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
number = {{9}},
pages = {{1558--1575}},
publisher = {{Springer Science and Business Media LLC}},
title = {{{Insights into the decomposition of zirconium acetylacetonate using synchrotron radiation: Routes to the formation of volatile Zr-intermediates}}},
doi = {{10.1557/s43578-022-00566-6}},
volume = {{37}},
year = {{2022}},
}
@article{25142,
abstract = {{Additive Manufacturing provides the opportunity to produce tailored and complex structures economically. The use of lattice structures in combination with a thermoplastic elastomer enables the generation of structures with configurable properties by varying the cell parameters. Since there is only little knowledge about the producibility of lattice structures made of TPE in the laser sintering process and the resulting mechanical properties, different kinds of lattice structures are investigated within this work. The cell type, cell size and strut thickness of these structures are varied and analyzed. Within the experimental characterization of Dodecahedron-cell static and cyclic compression tests of sandwich structures are focused. The material exhibits hyperelastic and plastic properties and also the Mullins-Effect. For the later design of real TPE structures, the use of numerical methods helps to reduce time and costs. The preceding experimental investigations are used to develop a concept for the numerical modeling of TPE lattice structures.}},
author = {{Kummert, Christina and Schmid, Hans-Joachim and Risse, Lena and Kullmer, Gunter}},
issn = {{0884-2914}},
journal = {{Journal of Materials Research}},
title = {{{Mechanical characterization and numerical modeling of laser-sintered TPE lattice structures}}},
doi = {{10.1557/s43578-021-00321-3}},
year = {{2021}},
}
@article{15965,
abstract = {{Abstract}},
author = {{Leuders, Stefan and Lieneke, Tobias and Lammers, Stefan and Tröster, Thomas and Niendorf, Thomas}},
issn = {{0884-2914}},
journal = {{Journal of Materials Research}},
pages = {{1911--1919}},
title = {{{On the fatigue properties of metals manufactured by selective laser melting – The role of ductility}}},
doi = {{10.1557/jmr.2014.157}},
year = {{2014}},
}
@article{7498,
author = {{Lei, Wen and Notthoff, Christian and Offer, Matthias and Meier, Cedrik and Lorke, Axel and Jagadish, Chennupati and Wieck, Andreas D.}},
issn = {{0884-2914}},
journal = {{Journal of Materials Research}},
number = {{07}},
pages = {{2179--2184}},
publisher = {{Cambridge University Press (CUP)}},
title = {{{Electron energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation}}},
doi = {{10.1557/jmr.2009.0293}},
volume = {{24}},
year = {{2009}},
}
@article{39846,
abstract = {{This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.}},
author = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
issn = {{0884-2914}},
journal = {{Journal of Materials Research}},
keywords = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
number = {{7}},
pages = {{1999--2002}},
publisher = {{Springer Science and Business Media LLC}},
title = {{{Degradation of organic field-effect transistors made of pentacene}}},
doi = {{10.1557/jmr.2004.0267}},
volume = {{19}},
year = {{2005}},
}
@article{39349,
abstract = {{This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.}},
author = {{Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich}},
issn = {{0884-2914}},
journal = {{Journal of Materials Research}},
keywords = {{Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science}},
number = {{7}},
pages = {{1999--2002}},
publisher = {{Springer Science and Business Media LLC}},
title = {{{Degradation of organic field-effect transistors made of pentacene}}},
doi = {{10.1557/jmr.2004.0267}},
volume = {{19}},
year = {{2005}},
}