---
_id: '53084'
abstract:
- lang: eng
  text: "<jats:title>Abstract</jats:title><jats:p>The thermal decomposition of Zr(acac)<jats:sub>4</jats:sub>
    is studied in a SiC-microreactor on the micro-second time scale. By utilizing
    synchrotron radiation and photoelectron photoion coincidence spectroscopy, six
    important zirconium intermediates, as for instance Zr(C<jats:sub>5</jats:sub>H<jats:sub>7</jats:sub>O<jats:sub>2</jats:sub>)<jats:sub>2</jats:sub>(C<jats:sub>5</jats:sub>H<jats:sub>6</jats:sub>O<jats:sub>2</jats:sub>),
    and Zr(C<jats:sub>5</jats:sub>H<jats:sub>6</jats:sub>O<jats:sub>2</jats:sub>)<jats:sub>2</jats:sub>,
    are identified in the gas phase for the first time. The adiabatic ionization thresholds
    of intermediately formed zirconium species are estimated and the main products
    of their thermal decomposition, acetylacetone, acetylallene and acetone are characterized
    unambiguously and isomer-selectively. Based on all detected intermediates, we
    deduce the predominant pyrolysis pathways of the precursor in the temperature
    range from 400 to 900 K. Our findings are complemented by numerical simulations
    of the flow field in the microreactor, which show that the choice of dilution
    gas significantly influences the temperature profile and residence times in the
    microreactor, such that helium provides a more uniform flow field than argon and
    should preferentially be used.</jats:p>\r\n                <jats:p><jats:bold>Graphical
    abstract</jats:bold></jats:p>\r\n                <jats:p>Using a soft ionization
    method coupled to velocity map imaging (VMI), leads to valuable insights in the
    thermal decomposition of Zr(C<jats:sub>5</jats:sub>H<jats:sub>7</jats:sub>O<jats:sub>2</jats:sub>)<jats:sub>4</jats:sub>,
    used in the synthesis of functional nanomaterials and ceramic coatings. Thanks
    to the use of a microreactor, important gas</jats:p>"
author:
- first_name: Sebastian
  full_name: Grimm, Sebastian
  last_name: Grimm
- first_name: Seung-Jin
  full_name: Baik, Seung-Jin
  last_name: Baik
- first_name: Patrick
  full_name: Hemberger, Patrick
  last_name: Hemberger
- first_name: Tina
  full_name: Kasper, Tina
  id: '94562'
  last_name: Kasper
  orcid: '0000-0003-3993-5316 '
- first_name: Andreas M.
  full_name: Kempf, Andreas M.
  last_name: Kempf
- first_name: Burak
  full_name: Atakan, Burak
  last_name: Atakan
citation:
  ama: 'Grimm S, Baik S-J, Hemberger P, Kasper T, Kempf AM, Atakan B. Insights into
    the decomposition of zirconium acetylacetonate using synchrotron radiation: Routes
    to the formation of volatile Zr-intermediates. <i>Journal of Materials Research</i>.
    2022;37(9):1558-1575. doi:<a href="https://doi.org/10.1557/s43578-022-00566-6">10.1557/s43578-022-00566-6</a>'
  apa: 'Grimm, S., Baik, S.-J., Hemberger, P., Kasper, T., Kempf, A. M., &#38; Atakan,
    B. (2022). Insights into the decomposition of zirconium acetylacetonate using
    synchrotron radiation: Routes to the formation of volatile Zr-intermediates. <i>Journal
    of Materials Research</i>, <i>37</i>(9), 1558–1575. <a href="https://doi.org/10.1557/s43578-022-00566-6">https://doi.org/10.1557/s43578-022-00566-6</a>'
  bibtex: '@article{Grimm_Baik_Hemberger_Kasper_Kempf_Atakan_2022, title={Insights
    into the decomposition of zirconium acetylacetonate using synchrotron radiation:
    Routes to the formation of volatile Zr-intermediates}, volume={37}, DOI={<a href="https://doi.org/10.1557/s43578-022-00566-6">10.1557/s43578-022-00566-6</a>},
    number={9}, journal={Journal of Materials Research}, publisher={Springer Science
    and Business Media LLC}, author={Grimm, Sebastian and Baik, Seung-Jin and Hemberger,
    Patrick and Kasper, Tina and Kempf, Andreas M. and Atakan, Burak}, year={2022},
    pages={1558–1575} }'
  chicago: 'Grimm, Sebastian, Seung-Jin Baik, Patrick Hemberger, Tina Kasper, Andreas
    M. Kempf, and Burak Atakan. “Insights into the Decomposition of Zirconium Acetylacetonate
    Using Synchrotron Radiation: Routes to the Formation of Volatile Zr-Intermediates.”
    <i>Journal of Materials Research</i> 37, no. 9 (2022): 1558–75. <a href="https://doi.org/10.1557/s43578-022-00566-6">https://doi.org/10.1557/s43578-022-00566-6</a>.'
  ieee: 'S. Grimm, S.-J. Baik, P. Hemberger, T. Kasper, A. M. Kempf, and B. Atakan,
    “Insights into the decomposition of zirconium acetylacetonate using synchrotron
    radiation: Routes to the formation of volatile Zr-intermediates,” <i>Journal of
    Materials Research</i>, vol. 37, no. 9, pp. 1558–1575, 2022, doi: <a href="https://doi.org/10.1557/s43578-022-00566-6">10.1557/s43578-022-00566-6</a>.'
  mla: 'Grimm, Sebastian, et al. “Insights into the Decomposition of Zirconium Acetylacetonate
    Using Synchrotron Radiation: Routes to the Formation of Volatile Zr-Intermediates.”
    <i>Journal of Materials Research</i>, vol. 37, no. 9, Springer Science and Business
    Media LLC, 2022, pp. 1558–75, doi:<a href="https://doi.org/10.1557/s43578-022-00566-6">10.1557/s43578-022-00566-6</a>.'
  short: S. Grimm, S.-J. Baik, P. Hemberger, T. Kasper, A.M. Kempf, B. Atakan, Journal
    of Materials Research 37 (2022) 1558–1575.
date_created: 2024-03-27T17:48:20Z
date_updated: 2024-03-27T17:49:03Z
department:
- _id: '728'
doi: 10.1557/s43578-022-00566-6
extern: '1'
intvolume: '        37'
issue: '9'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 1558-1575
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: 'Insights into the decomposition of zirconium acetylacetonate using synchrotron
  radiation: Routes to the formation of volatile Zr-intermediates'
type: journal_article
user_id: '94562'
volume: 37
year: '2022'
...
---
_id: '25142'
abstract:
- lang: eng
  text: Additive Manufacturing provides the opportunity to produce tailored and complex
    structures economically. The use of lattice structures in combination with a thermoplastic
    elastomer enables the generation of structures with configurable properties by
    varying the cell parameters. Since there is only little knowledge about the producibility
    of lattice structures made of TPE in the laser sintering process and the resulting
    mechanical properties, different kinds of lattice structures are investigated
    within this work. The cell type, cell size and strut thickness of these structures
    are varied and analyzed. Within the experimental characterization of Dodecahedron-cell
    static and cyclic compression tests of sandwich structures are focused. The material
    exhibits hyperelastic and plastic properties and also the Mullins-Effect. For
    the later design of real TPE structures, the use of numerical methods helps to
    reduce time and costs. The preceding experimental investigations are used to develop
    a concept for the numerical modeling of TPE lattice structures.
author:
- first_name: Christina
  full_name: Kummert, Christina
  last_name: Kummert
- first_name: Hans-Joachim
  full_name: Schmid, Hans-Joachim
  id: '464'
  last_name: Schmid
- first_name: Lena
  full_name: Risse, Lena
  id: '27356'
  last_name: Risse
- first_name: Gunter
  full_name: Kullmer, Gunter
  id: '291'
  last_name: Kullmer
citation:
  ama: Kummert C, Schmid H-J, Risse L, Kullmer G. Mechanical characterization and
    numerical modeling of laser-sintered TPE lattice structures. <i>Journal of Materials
    Research</i>. Published online 2021. doi:<a href="https://doi.org/10.1557/s43578-021-00321-3">10.1557/s43578-021-00321-3</a>
  apa: Kummert, C., Schmid, H.-J., Risse, L., &#38; Kullmer, G. (2021). Mechanical
    characterization and numerical modeling of laser-sintered TPE lattice structures.
    <i>Journal of Materials Research</i>. <a href="https://doi.org/10.1557/s43578-021-00321-3">https://doi.org/10.1557/s43578-021-00321-3</a>
  bibtex: '@article{Kummert_Schmid_Risse_Kullmer_2021, title={Mechanical characterization
    and numerical modeling of laser-sintered TPE lattice structures}, DOI={<a href="https://doi.org/10.1557/s43578-021-00321-3">10.1557/s43578-021-00321-3</a>},
    journal={Journal of Materials Research}, author={Kummert, Christina and Schmid,
    Hans-Joachim and Risse, Lena and Kullmer, Gunter}, year={2021} }'
  chicago: Kummert, Christina, Hans-Joachim Schmid, Lena Risse, and Gunter Kullmer.
    “Mechanical Characterization and Numerical Modeling of Laser-Sintered TPE Lattice
    Structures.” <i>Journal of Materials Research</i>, 2021. <a href="https://doi.org/10.1557/s43578-021-00321-3">https://doi.org/10.1557/s43578-021-00321-3</a>.
  ieee: 'C. Kummert, H.-J. Schmid, L. Risse, and G. Kullmer, “Mechanical characterization
    and numerical modeling of laser-sintered TPE lattice structures,” <i>Journal of
    Materials Research</i>, 2021, doi: <a href="https://doi.org/10.1557/s43578-021-00321-3">10.1557/s43578-021-00321-3</a>.'
  mla: Kummert, Christina, et al. “Mechanical Characterization and Numerical Modeling
    of Laser-Sintered TPE Lattice Structures.” <i>Journal of Materials Research</i>,
    2021, doi:<a href="https://doi.org/10.1557/s43578-021-00321-3">10.1557/s43578-021-00321-3</a>.
  short: C. Kummert, H.-J. Schmid, L. Risse, G. Kullmer, Journal of Materials Research
    (2021).
date_created: 2021-09-29T17:17:53Z
date_updated: 2022-01-06T06:56:53Z
doi: 10.1557/s43578-021-00321-3
language:
- iso: eng
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
status: public
title: Mechanical characterization and numerical modeling of laser-sintered TPE lattice
  structures
type: journal_article
user_id: '70093'
year: '2021'
...
---
_id: '15965'
abstract:
- lang: eng
  text: <jats:title>Abstract</jats:title><jats:p><jats:fig position="anchor"><jats:graphic
    xmlns:xlink="http://www.w3.org/1999/xlink" orientation="portrait" mime-subtype="jpeg"
    mimetype="image" position="float" xlink:type="simple" xlink:href="S0884291414001575_figAb"
    /></jats:fig></jats:p>
author:
- first_name: Stefan
  full_name: Leuders, Stefan
  last_name: Leuders
- first_name: Tobias
  full_name: Lieneke, Tobias
  id: '13956'
  last_name: Lieneke
- first_name: Stefan
  full_name: Lammers, Stefan
  id: '13835'
  last_name: Lammers
- first_name: Thomas
  full_name: Tröster, Thomas
  id: '553'
  last_name: Tröster
- first_name: Thomas
  full_name: Niendorf, Thomas
  last_name: Niendorf
citation:
  ama: Leuders S, Lieneke T, Lammers S, Tröster T, Niendorf T. On the fatigue properties
    of metals manufactured by selective laser melting – The role of ductility. <i>Journal
    of Materials Research</i>. Published online 2014:1911-1919. doi:<a href="https://doi.org/10.1557/jmr.2014.157">10.1557/jmr.2014.157</a>
  apa: Leuders, S., Lieneke, T., Lammers, S., Tröster, T., &#38; Niendorf, T. (2014).
    On the fatigue properties of metals manufactured by selective laser melting –
    The role of ductility. <i>Journal of Materials Research</i>, 1911–1919. <a href="https://doi.org/10.1557/jmr.2014.157">https://doi.org/10.1557/jmr.2014.157</a>
  bibtex: '@article{Leuders_Lieneke_Lammers_Tröster_Niendorf_2014, title={On the fatigue
    properties of metals manufactured by selective laser melting – The role of ductility},
    DOI={<a href="https://doi.org/10.1557/jmr.2014.157">10.1557/jmr.2014.157</a>},
    journal={Journal of Materials Research}, author={Leuders, Stefan and Lieneke,
    Tobias and Lammers, Stefan and Tröster, Thomas and Niendorf, Thomas}, year={2014},
    pages={1911–1919} }'
  chicago: Leuders, Stefan, Tobias Lieneke, Stefan Lammers, Thomas Tröster, and Thomas
    Niendorf. “On the Fatigue Properties of Metals Manufactured by Selective Laser
    Melting – The Role of Ductility.” <i>Journal of Materials Research</i>, 2014,
    1911–19. <a href="https://doi.org/10.1557/jmr.2014.157">https://doi.org/10.1557/jmr.2014.157</a>.
  ieee: 'S. Leuders, T. Lieneke, S. Lammers, T. Tröster, and T. Niendorf, “On the
    fatigue properties of metals manufactured by selective laser melting – The role
    of ductility,” <i>Journal of Materials Research</i>, pp. 1911–1919, 2014, doi:
    <a href="https://doi.org/10.1557/jmr.2014.157">10.1557/jmr.2014.157</a>.'
  mla: Leuders, Stefan, et al. “On the Fatigue Properties of Metals Manufactured by
    Selective Laser Melting – The Role of Ductility.” <i>Journal of Materials Research</i>,
    2014, pp. 1911–19, doi:<a href="https://doi.org/10.1557/jmr.2014.157">10.1557/jmr.2014.157</a>.
  short: S. Leuders, T. Lieneke, S. Lammers, T. Tröster, T. Niendorf, Journal of Materials
    Research (2014) 1911–1919.
date_created: 2020-02-21T14:40:39Z
date_updated: 2024-03-27T15:25:07Z
department:
- _id: '9'
- _id: '321'
- _id: '149'
- _id: '146'
- _id: '219'
doi: 10.1557/jmr.2014.157
language:
- iso: eng
page: 1911-1919
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
status: public
title: On the fatigue properties of metals manufactured by selective laser melting
  – The role of ductility
type: journal_article
user_id: '13956'
year: '2014'
...
---
_id: '7498'
author:
- first_name: Wen
  full_name: Lei, Wen
  last_name: Lei
- first_name: Christian
  full_name: Notthoff, Christian
  last_name: Notthoff
- first_name: Matthias
  full_name: Offer, Matthias
  last_name: Offer
- first_name: Cedrik
  full_name: Meier, Cedrik
  id: '20798'
  last_name: Meier
  orcid: https://orcid.org/0000-0002-3787-3572
- first_name: Axel
  full_name: Lorke, Axel
  last_name: Lorke
- first_name: Chennupati
  full_name: Jagadish, Chennupati
  last_name: Jagadish
- first_name: Andreas D.
  full_name: Wieck, Andreas D.
  last_name: Wieck
citation:
  ama: Lei W, Notthoff C, Offer M, et al. Electron energy structure of self-assembled
    In(Ga)As nanostructures probed by capacitance-voltage spectroscopy and one-dimensional
    numerical simulation. <i>Journal of Materials Research</i>. 2009;24(07):2179-2184.
    doi:<a href="https://doi.org/10.1557/jmr.2009.0293">10.1557/jmr.2009.0293</a>
  apa: Lei, W., Notthoff, C., Offer, M., Meier, C., Lorke, A., Jagadish, C., &#38;
    Wieck, A. D. (2009). Electron energy structure of self-assembled In(Ga)As nanostructures
    probed by capacitance-voltage spectroscopy and one-dimensional numerical simulation.
    <i>Journal of Materials Research</i>, <i>24</i>(07), 2179–2184. <a href="https://doi.org/10.1557/jmr.2009.0293">https://doi.org/10.1557/jmr.2009.0293</a>
  bibtex: '@article{Lei_Notthoff_Offer_Meier_Lorke_Jagadish_Wieck_2009, title={Electron
    energy structure of self-assembled In(Ga)As nanostructures probed by capacitance-voltage
    spectroscopy and one-dimensional numerical simulation}, volume={24}, DOI={<a href="https://doi.org/10.1557/jmr.2009.0293">10.1557/jmr.2009.0293</a>},
    number={07}, journal={Journal of Materials Research}, publisher={Cambridge University
    Press (CUP)}, author={Lei, Wen and Notthoff, Christian and Offer, Matthias and
    Meier, Cedrik and Lorke, Axel and Jagadish, Chennupati and Wieck, Andreas D.},
    year={2009}, pages={2179–2184} }'
  chicago: 'Lei, Wen, Christian Notthoff, Matthias Offer, Cedrik Meier, Axel Lorke,
    Chennupati Jagadish, and Andreas D. Wieck. “Electron Energy Structure of Self-Assembled
    In(Ga)As Nanostructures Probed by Capacitance-Voltage Spectroscopy and One-Dimensional
    Numerical Simulation.” <i>Journal of Materials Research</i> 24, no. 07 (2009):
    2179–84. <a href="https://doi.org/10.1557/jmr.2009.0293">https://doi.org/10.1557/jmr.2009.0293</a>.'
  ieee: W. Lei <i>et al.</i>, “Electron energy structure of self-assembled In(Ga)As
    nanostructures probed by capacitance-voltage spectroscopy and one-dimensional
    numerical simulation,” <i>Journal of Materials Research</i>, vol. 24, no. 07,
    pp. 2179–2184, 2009.
  mla: Lei, Wen, et al. “Electron Energy Structure of Self-Assembled In(Ga)As Nanostructures
    Probed by Capacitance-Voltage Spectroscopy and One-Dimensional Numerical Simulation.”
    <i>Journal of Materials Research</i>, vol. 24, no. 07, Cambridge University Press
    (CUP), 2009, pp. 2179–84, doi:<a href="https://doi.org/10.1557/jmr.2009.0293">10.1557/jmr.2009.0293</a>.
  short: W. Lei, C. Notthoff, M. Offer, C. Meier, A. Lorke, C. Jagadish, A.D. Wieck,
    Journal of Materials Research 24 (2009) 2179–2184.
date_created: 2019-02-04T14:46:14Z
date_updated: 2022-01-06T07:03:39Z
department:
- _id: '15'
- _id: '230'
- _id: '287'
- _id: '35'
doi: 10.1557/jmr.2009.0293
intvolume: '        24'
issue: '07'
language:
- iso: eng
page: 2179-2184
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
publisher: Cambridge University Press (CUP)
status: public
title: Electron energy structure of self-assembled In(Ga)As nanostructures probed
  by capacitance-voltage spectroscopy and one-dimensional numerical simulation
type: journal_article
user_id: '20798'
volume: 24
year: '2009'
...
---
_id: '39846'
abstract:
- lang: eng
  text: <jats:p>This article reports degradation experiments on organic thin film
    transistors using the small organic molecule pentacene as the semiconducting material.
    Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers
    as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show
    the influence of temperature and exposure to ambient air on the charge carrier
    field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found
    to have unambiguously degraded over 3 orders of magnitude in maximum on-current
    and charge carrier field-effect mobility, but they still operated after a period
    of 9 months in ambient air conditions. A thermal treatment was carried out in
    vacuum conditions and revealed a degradation of the charge carrier field-effect
    mobility, maximum on-current, and threshold voltage.</jats:p>
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect
    transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002.
    doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of
    organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>,
    <i>19</i>(7), 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>
  bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic
    field-effect transistors made of pentacene}, volume={19}, DOI={<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>},
    number={7}, journal={Journal of Materials Research}, publisher={Springer Science
    and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann,
    Ulrich}, year={2005}, pages={1999–2002} }'
  chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Degradation of
    Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>
    19, no. 7 (2005): 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>.'
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic
    field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>,
    vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.'
  mla: Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made
    of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer
    Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.
  short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research
    19 (2005) 1999–2002.
date_created: 2023-01-25T08:37:47Z
date_updated: 2023-03-21T10:06:18Z
department:
- _id: '59'
doi: 10.1557/jmr.2004.0267
intvolume: '        19'
issue: '7'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 1999-2002
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: Degradation of organic field-effect transistors made of pentacene
type: journal_article
user_id: '20179'
volume: 19
year: '2005'
...
---
_id: '39349'
abstract:
- lang: eng
  text: <jats:p>This article reports degradation experiments on organic thin film
    transistors using the small organic molecule pentacene as the semiconducting material.
    Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers
    as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show
    the influence of temperature and exposure to ambient air on the charge carrier
    field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found
    to have unambiguously degraded over 3 orders of magnitude in maximum on-current
    and charge carrier field-effect mobility, but they still operated after a period
    of 9 months in ambient air conditions. A thermal treatment was carried out in
    vacuum conditions and revealed a degradation of the charge carrier field-effect
    mobility, maximum on-current, and threshold voltage.</jats:p>
author:
- first_name: Ch.
  full_name: Pannemann, Ch.
  last_name: Pannemann
- first_name: T.
  full_name: Diekmann, T.
  last_name: Diekmann
- first_name: Ulrich
  full_name: Hilleringmann, Ulrich
  id: '20179'
  last_name: Hilleringmann
citation:
  ama: Pannemann Ch, Diekmann T, Hilleringmann U. Degradation of organic field-effect
    transistors made of pentacene. <i>Journal of Materials Research</i>. 2005;19(7):1999-2002.
    doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>
  apa: Pannemann, Ch., Diekmann, T., &#38; Hilleringmann, U. (2005). Degradation of
    organic field-effect transistors made of pentacene. <i>Journal of Materials Research</i>,
    <i>19</i>(7), 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>
  bibtex: '@article{Pannemann_Diekmann_Hilleringmann_2005, title={Degradation of organic
    field-effect transistors made of pentacene}, volume={19}, DOI={<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>},
    number={7}, journal={Journal of Materials Research}, publisher={Springer Science
    and Business Media LLC}, author={Pannemann, Ch. and Diekmann, T. and Hilleringmann,
    Ulrich}, year={2005}, pages={1999–2002} }'
  chicago: 'Pannemann, Ch., T. Diekmann, and Ulrich Hilleringmann. “Degradation of
    Organic Field-Effect Transistors Made of Pentacene.” <i>Journal of Materials Research</i>
    19, no. 7 (2005): 1999–2002. <a href="https://doi.org/10.1557/jmr.2004.0267">https://doi.org/10.1557/jmr.2004.0267</a>.'
  ieee: 'Ch. Pannemann, T. Diekmann, and U. Hilleringmann, “Degradation of organic
    field-effect transistors made of pentacene,” <i>Journal of Materials Research</i>,
    vol. 19, no. 7, pp. 1999–2002, 2005, doi: <a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.'
  mla: Pannemann, Ch., et al. “Degradation of Organic Field-Effect Transistors Made
    of Pentacene.” <i>Journal of Materials Research</i>, vol. 19, no. 7, Springer
    Science and Business Media LLC, 2005, pp. 1999–2002, doi:<a href="https://doi.org/10.1557/jmr.2004.0267">10.1557/jmr.2004.0267</a>.
  short: Ch. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research
    19 (2005) 1999–2002.
date_created: 2023-01-24T09:24:41Z
date_updated: 2023-03-22T10:38:56Z
department:
- _id: '59'
doi: 10.1557/jmr.2004.0267
intvolume: '        19'
issue: '7'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
page: 1999-2002
publication: Journal of Materials Research
publication_identifier:
  issn:
  - 0884-2914
  - 2044-5326
publication_status: published
publisher: Springer Science and Business Media LLC
status: public
title: Degradation of organic field-effect transistors made of pentacene
type: journal_article
user_id: '20179'
volume: 19
year: '2005'
...