@article{44851,
  abstract     = {{<jats:p>We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band. We achieved these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present detailed investigations of the hole morphologies measured by atomic force microscopy. Statistical analysis of a set of nanoholes reveals a high degree of symmetry for nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction. By systematically scanning the parameter space, we were able to fill the holes with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence measurements, we observe photoluminescence emission in the O-band up into the C-band depending on the filling height of the nanoholes.</jats:p>}},
  author       = {{Deutsch, D. and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, D.}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  keywords     = {{General Physics and Astronomy}},
  number       = {{5}},
  publisher    = {{AIP Publishing}},
  title        = {{{Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers}}},
  doi          = {{10.1063/5.0147281}},
  volume       = {{13}},
  year         = {{2023}},
}

@article{57677,
  abstract     = {{<jats:p>We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band. We achieved these quantum dots by local droplet etching via InAl droplets in an In0.52Al0.48As layer and subsequent filling of the holes with In0.53Ga0.47As. Here, we present detailed investigations of the hole morphologies measured by atomic force microscopy. Statistical analysis of a set of nanoholes reveals a high degree of symmetry for nearly half of them when etched at optimized temperatures. Overgrowth with 50–150 nm In0.52Al0.48As increases their diameter and elongates the holes along the [01̄1]-direction. By systematically scanning the parameter space, we were able to fill the holes with In0.53Ga0.47As, and by capping the filled holes and performing photoluminescence measurements, we observe photoluminescence emission in the O-band up into the C-band depending on the filling height of the nanoholes.</jats:p>}},
  author       = {{Deutsch, Dennis and Buchholz, C. and Zolatanosha, V. and Jöns, K. D. and Reuter, Dirk}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  number       = {{5}},
  publisher    = {{AIP Publishing}},
  title        = {{{Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers}}},
  doi          = {{10.1063/5.0147281}},
  volume       = {{13}},
  year         = {{2023}},
}

@article{28198,
  author       = {{Steinrück, Hans-Georg}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  number       = {{11}},
  pages        = {{115119}},
  title        = {{{General relationship between salt concentration and x-ray absorption for binary electrolytes}}},
  doi          = {{10.1063/5.0072947}},
  volume       = {{11}},
  year         = {{2021}},
}

@article{22533,
  author       = {{Meier, F. and Protte, M. and Baron, E. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, D. J.}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  title        = {{{Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)}}},
  doi          = {{10.1063/5.0053865}},
  year         = {{2021}},
}

@article{23843,
  author       = {{Meier, F. and Protte, M. and Baron, E. and Feneberg, M. and Goldhahn, R. and Reuter, Dirk and As, Donat Josef}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  title        = {{{Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)}}},
  doi          = {{10.1063/5.0053865}},
  year         = {{2021}},
}

@article{7031,
  author       = {{Kramer, Tobias and Kreisbeck, Christoph and Riha, Christian and Chiatti, Olivio and Buchholz, Sven S. and Wieck, Andreas D. and Reuter, Dirk and Fischer, Saskia F.}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  number       = {{6}},
  publisher    = {{AIP Publishing}},
  title        = {{{Thermal energy and charge currents in multi-terminal nanorings}}},
  doi          = {{10.1063/1.4953812}},
  volume       = {{6}},
  year         = {{2016}},
}

@article{7488,
  author       = {{Ruth, Marcel and Meier, Cedrik}},
  issn         = {{2158-3226}},
  journal      = {{AIP Advances}},
  number       = {{7}},
  publisher    = {{AIP Publishing}},
  title        = {{{Structural enhancement of ZnO on SiO2 for photonic applications}}},
  doi          = {{10.1063/1.4815974}},
  volume       = {{3}},
  year         = {{2013}},
}